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Development of gate and base drive using SiC junction field effect transistors [[electronic resource] /] / by Timothy E. Griffin
| Development of gate and base drive using SiC junction field effect transistors [[electronic resource] /] / by Timothy E. Griffin |
| Autore | Griffin Timothy E |
| Pubbl/distr/stampa | Adelphi, Md. : , : Army Research Laboratory, , [2008] |
| Descrizione fisica | iv, 16 pages : digital, PDF file |
| Collana | ARL-TR |
| Soggetto topico |
Field-effect transistors
Junction transistors |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910698127803321 |
Griffin Timothy E
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| Adelphi, Md. : , : Army Research Laboratory, , [2008] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Junction-to-case thermal resistance of a silicon carbide bipolar junction transistor measured [[electronic resource] /] / Janis M. Niedra
| Junction-to-case thermal resistance of a silicon carbide bipolar junction transistor measured [[electronic resource] /] / Janis M. Niedra |
| Autore | Niedra Janis M |
| Pubbl/distr/stampa | Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2006] |
| Descrizione fisica | 1 online resource (11 pages) : illustrations |
| Collana | NASA/CR |
| Soggetto topico |
Junction transistors
Temperature measurement Bipolar transistors Electric potential Pulse amplitude Thermal resistance Silicon carbides |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910699314003321 |
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Niedra Janis M
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| Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2006] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Switching characteristics of a 4H-SiC based bipolar junction transistor to 200 °C [[electronic resource] /] / Janis M. Niedra
| Switching characteristics of a 4H-SiC based bipolar junction transistor to 200 °C [[electronic resource] /] / Janis M. Niedra |
| Autore | Niedra Janis M |
| Pubbl/distr/stampa | Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2006] |
| Descrizione fisica | 1 online resource (6 pages) : illustrations |
| Collana | NASA/CR- |
| Soggetto topico |
Junction transistors
High temperature Bipolar transistors Switching Static loads Electric potential |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910699314303321 |
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Niedra Janis M
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| Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2006] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Total ionizing dose test report for the SFT2222A NPN bipolar junction transistor / / Dakai Chen, James Forney
| Total ionizing dose test report for the SFT2222A NPN bipolar junction transistor / / Dakai Chen, James Forney |
| Autore | Chen Dakai <1982-> |
| Pubbl/distr/stampa | Greenbelt, Maryland : , : National Aeronautics and Space Administration, Goddard Space Flight Center, , April 2021 |
| Descrizione fisica | 1 online resource (approximately 22 pages) : illustrations |
| Collana | NASA/TM |
| Soggetto topico |
Bipolar transistors
Junction transistors |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910716639603321 |
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Chen Dakai <1982->
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| Greenbelt, Maryland : , : National Aeronautics and Space Administration, Goddard Space Flight Center, , April 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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