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20 GHz monolithic transmit modules / / J.A. Higgins, principal investigator
| 20 GHz monolithic transmit modules / / J.A. Higgins, principal investigator |
| Autore | Higgins J. A. |
| Pubbl/distr/stampa | Thousand Oaks CA : , : Rockwell International Science Center, , May 1988 |
| Descrizione fisica | 1 online resource (viii, 80, 5 pages, 7 unnumbered pages) : illustrated |
| Collana | NASA CR |
| Soggetto topico |
Field effect transistors
Phase shift circuits Power amplifiers Gallium arsenides Ion implantation |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910703867603321 |
Higgins J. A.
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| Thousand Oaks CA : , : Rockwell International Science Center, , May 1988 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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2016 21st International Conference on Ion Implantation Technology (IIT) / / Institute of Electrical and Electronics Engineers
| 2016 21st International Conference on Ion Implantation Technology (IIT) / / Institute of Electrical and Electronics Engineers |
| Pubbl/distr/stampa | Piscataway, NJ : , : IEEE, , 2016 |
| Descrizione fisica | 1 online resource (87 pages) |
| Disciplina | 621.38152 |
| Soggetto topico | Ion implantation |
| ISBN | 1-5090-2024-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | 2016 21st International Conference on Ion Implantation Technology |
| Record Nr. | UNISA-996279842603316 |
| Piscataway, NJ : , : IEEE, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
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2016 21st International Conference on Ion Implantation Technology (IIT) / / Institute of Electrical and Electronics Engineers
| 2016 21st International Conference on Ion Implantation Technology (IIT) / / Institute of Electrical and Electronics Engineers |
| Pubbl/distr/stampa | Piscataway, NJ : , : IEEE, , 2016 |
| Descrizione fisica | 1 online resource (87 pages) |
| Disciplina | 621.38152 |
| Soggetto topico | Ion implantation |
| ISBN | 1-5090-2024-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | 2016 21st International Conference on Ion Implantation Technology |
| Record Nr. | UNINA-9910172650803321 |
| Piscataway, NJ : , : IEEE, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation / / D.S. Woo
| Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation / / D.S. Woo |
| Autore | Woo D. S. |
| Pubbl/distr/stampa | Marshall Space Flight Center, AL : , : George C. Marshall Space Flight Center, , January 1982 |
| Descrizione fisica | 1 online resource (v, 12 pages, 1 unnumbered page) : illustrations |
| Collana | NASA/CR |
| Soggetto topico |
Computer aided design
Coding Ion implantation Masks Electron beams |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910709974503321 |
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Woo D. S.
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| Marshall Space Flight Center, AL : , : George C. Marshall Space Flight Center, , January 1982 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Effect of the evaporation temperature of a tetraphenyl-tetramethyl-trisiloxane (Dow-Corning 704) precursor on the properties of silicon containing diamond-like carbon (Si-DLC) coatings synthesized by ion-beam-assisted deposition (IBAD) [[electronic resource] /] / by C. G. Fountzoulas ... [and others]
| Effect of the evaporation temperature of a tetraphenyl-tetramethyl-trisiloxane (Dow-Corning 704) precursor on the properties of silicon containing diamond-like carbon (Si-DLC) coatings synthesized by ion-beam-assisted deposition (IBAD) [[electronic resource] /] / by C. G. Fountzoulas ... [and others] |
| Pubbl/distr/stampa | Aberdeen Proving Ground, MD : , : Army Research Laboratory, , [1999] |
| Descrizione fisica | viii, 14 pages : digital, PDF file |
| Altri autori (Persone) | FountzoulasC. G (Constantine G.) |
| Collana | ARL-TR |
| Soggetto topico |
Surfaces (Technology)
Silicon Ion implantation Chemical bonds |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Effect of the evaporation temperature of a tetraphenyl-tetramethyl-trisiloxane |
| Record Nr. | UNINA-9910698062603321 |
| Aberdeen Proving Ground, MD : , : Army Research Laboratory, , [1999] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Friction and wear of ion-beam-deposited diamondlike carbon on chemical-vapor-deposited, fine-grain diamond / / Kazuhisa Miyoshi, Richard L.C. Wu and William C. Lanter
| Friction and wear of ion-beam-deposited diamondlike carbon on chemical-vapor-deposited, fine-grain diamond / / Kazuhisa Miyoshi, Richard L.C. Wu and William C. Lanter |
| Autore | Miyoshi Kazuhisa |
| Pubbl/distr/stampa | Cleveland, Ohio : , : National Aeronautics and Space Administration, Lewis Research Center, , October 1996 |
| Descrizione fisica | 1 online resource (8 pages) : illustrations |
| Collana | NASA technical memorandum |
| Soggetto topico |
Diamond films
Carbon Tribology Wear resistance Vapor deposition Ion implantation Solid lubricants Lubrication Coefficient of friction Ultrahigh vacuum |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910707348203321 |
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Miyoshi Kazuhisa
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| Cleveland, Ohio : , : National Aeronautics and Space Administration, Lewis Research Center, , October 1996 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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IIT 2002 proceedings : ion implementation technology : 2002 14th International Conference on Ion Implantation Technology proceedings, Taos, New Mexico, USA, 22-27 September 2002
| IIT 2002 proceedings : ion implementation technology : 2002 14th International Conference on Ion Implantation Technology proceedings, Taos, New Mexico, USA, 22-27 September 2002 |
| Pubbl/distr/stampa | [Place of publication not identified], : IEEE, 2002 |
| Disciplina | 621.3815/2 |
| Soggetto topico |
Semiconductors
Ion implantation Semiconductor doping Electrical & Computer Engineering Engineering & Applied Sciences Electrical Engineering |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996202408903316 |
| [Place of publication not identified], : IEEE, 2002 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
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Investigation of paramagnetic response of metallic epoxies [[electronic resource] /] / by Robert L. Ash and Hoshang Chegini
| Investigation of paramagnetic response of metallic epoxies [[electronic resource] /] / by Robert L. Ash and Hoshang Chegini |
| Autore | Ash Robert L |
| Pubbl/distr/stampa | Hampton, VA : , : National Aeronautics and Space Administration, Langley Research Center, , [1986] |
| Descrizione fisica | 1 online resource (27 unnumbered pages) |
| Altri autori (Persone) | CheginiHoshang |
| Collana | NASA-CR |
| Soggetto topico |
Epoxy resins
Ion implantation Metallicity Paramagnetism |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910701238703321 |
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Ash Robert L
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| Hampton, VA : , : National Aeronautics and Space Administration, Langley Research Center, , [1986] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Ion Implantation / / edited by Mark Goorsky
| Ion Implantation / / edited by Mark Goorsky |
| Pubbl/distr/stampa | London, England : , : IntechOpen, , 2012 |
| Descrizione fisica | 1 online resource (448 pages) : illustrations |
| Disciplina | 530.41 |
| Soggetto topico | Ion implantation |
| ISBN | 953-51-4292-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910317588903321 |
| London, England : , : IntechOpen, , 2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Ion implantation and activation . Volume 2 / / Kunihiro Suzuki
| Ion implantation and activation . Volume 2 / / Kunihiro Suzuki |
| Autore | Suzuki Kunihiro |
| Pubbl/distr/stampa | Sharjah : , : Bentham Science Publishers, , 2013 |
| Descrizione fisica | 1 online resource (171 p.) |
| Collana | Ion Implantation and Activation |
| Soggetto topico |
Ion implantation
Ion accelerators |
| Soggetto genere / forma | Electronic books. |
| ISBN | 1-60805-790-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Cover; Title; EUL; Contents; Preface; Acknowledgement; Chapter 01; Chapter 02; Chapter 03; Chapter 04; Chapter 05; Chapter 06; Chapter 07; Chapter 08; Chapter 09; Index |
| Record Nr. | UNINA-9910463008803321 |
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Suzuki Kunihiro
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| Sharjah : , : Bentham Science Publishers, , 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Soggetto topico
-
Ion implantation
(26)
- Semiconductors (7)
- Ion accelerators (5)
- Semiconductor doping (4)
- Alloys (3)