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20 GHz monolithic transmit modules / / J.A. Higgins, principal investigator
| 20 GHz monolithic transmit modules / / J.A. Higgins, principal investigator |
| Autore | Higgins J. A. |
| Pubbl/distr/stampa | Thousand Oaks CA : , : Rockwell International Science Center, , May 1988 |
| Descrizione fisica | 1 online resource (viii, 80, 5 pages, 7 unnumbered pages) : illustrated |
| Collana | NASA CR |
| Soggetto topico |
Field effect transistors
Phase shift circuits Power amplifiers Gallium arsenides Ion implantation |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910703867603321 |
Higgins J. A.
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| Thousand Oaks CA : , : Rockwell International Science Center, , May 1988 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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2016 21st International Conference on Ion Implantation Technology (IIT) / / Institute of Electrical and Electronics Engineers
| 2016 21st International Conference on Ion Implantation Technology (IIT) / / Institute of Electrical and Electronics Engineers |
| Pubbl/distr/stampa | Piscataway, NJ : , : IEEE, , 2016 |
| Descrizione fisica | 1 online resource (87 pages) |
| Disciplina | 621.38152 |
| Soggetto topico | Ion implantation |
| ISBN | 1-5090-2024-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | 2016 21st International Conference on Ion Implantation Technology |
| Record Nr. | UNISA-996279842603316 |
| Piscataway, NJ : , : IEEE, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
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2016 21st International Conference on Ion Implantation Technology (IIT) / / Institute of Electrical and Electronics Engineers
| 2016 21st International Conference on Ion Implantation Technology (IIT) / / Institute of Electrical and Electronics Engineers |
| Pubbl/distr/stampa | Piscataway, NJ : , : IEEE, , 2016 |
| Descrizione fisica | 1 online resource (87 pages) |
| Disciplina | 621.38152 |
| Soggetto topico | Ion implantation |
| ISBN | 1-5090-2024-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | 2016 21st International Conference on Ion Implantation Technology |
| Record Nr. | UNINA-9910172650803321 |
| Piscataway, NJ : , : IEEE, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation / / D.S. Woo
| Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation / / D.S. Woo |
| Autore | Woo D. S. |
| Pubbl/distr/stampa | Marshall Space Flight Center, AL : , : George C. Marshall Space Flight Center, , January 1982 |
| Descrizione fisica | 1 online resource (v, 12 pages, 1 unnumbered page) : illustrations |
| Collana | NASA/CR |
| Soggetto topico |
Computer aided design
Coding Ion implantation Masks Electron beams |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910709974503321 |
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Woo D. S.
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| Marshall Space Flight Center, AL : , : George C. Marshall Space Flight Center, , January 1982 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Effect of the evaporation temperature of a tetraphenyl-tetramethyl-trisiloxane (Dow-Corning 704) precursor on the properties of silicon containing diamond-like carbon (Si-DLC) coatings synthesized by ion-beam-assisted deposition (IBAD) [[electronic resource] /] / by C. G. Fountzoulas ... [and others]
| Effect of the evaporation temperature of a tetraphenyl-tetramethyl-trisiloxane (Dow-Corning 704) precursor on the properties of silicon containing diamond-like carbon (Si-DLC) coatings synthesized by ion-beam-assisted deposition (IBAD) [[electronic resource] /] / by C. G. Fountzoulas ... [and others] |
| Pubbl/distr/stampa | Aberdeen Proving Ground, MD : , : Army Research Laboratory, , [1999] |
| Descrizione fisica | viii, 14 pages : digital, PDF file |
| Altri autori (Persone) | FountzoulasC. G (Constantine G.) |
| Collana | ARL-TR |
| Soggetto topico |
Surfaces (Technology)
Silicon Ion implantation Chemical bonds |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Effect of the evaporation temperature of a tetraphenyl-tetramethyl-trisiloxane |
| Record Nr. | UNINA-9910698062603321 |
| Aberdeen Proving Ground, MD : , : Army Research Laboratory, , [1999] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Friction and wear of ion-beam-deposited diamondlike carbon on chemical-vapor-deposited, fine-grain diamond / / Kazuhisa Miyoshi, Richard L.C. Wu and William C. Lanter
| Friction and wear of ion-beam-deposited diamondlike carbon on chemical-vapor-deposited, fine-grain diamond / / Kazuhisa Miyoshi, Richard L.C. Wu and William C. Lanter |
| Autore | Miyoshi Kazuhisa |
| Pubbl/distr/stampa | Cleveland, Ohio : , : National Aeronautics and Space Administration, Lewis Research Center, , October 1996 |
| Descrizione fisica | 1 online resource (8 pages) : illustrations |
| Collana | NASA technical memorandum |
| Soggetto topico |
Diamond films
Carbon Tribology Wear resistance Vapor deposition Ion implantation Solid lubricants Lubrication Coefficient of friction Ultrahigh vacuum |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910707348203321 |
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Miyoshi Kazuhisa
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| Cleveland, Ohio : , : National Aeronautics and Space Administration, Lewis Research Center, , October 1996 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Handbook of ion beam processing technology : principles, deposition, film modification, and synthesis / / edited by Jerome J. Cuomo and Stephen M. Rossnagel, Harold R. Kaufman
| Handbook of ion beam processing technology : principles, deposition, film modification, and synthesis / / edited by Jerome J. Cuomo and Stephen M. Rossnagel, Harold R. Kaufman |
| Pubbl/distr/stampa | Park Ridge, N.J., U.S.A., : Noyes Publications, c1989 |
| Descrizione fisica | 1 online resource (456 p.) |
| Disciplina | 621.381/7 |
| Altri autori (Persone) |
CuomoJ. J
RossnagelStephen M KaufmanHarold R |
| Collana | Materials science and process technology series |
| Soggetto topico |
Ion implantation
Ion bombardment - Industrial applications |
| ISBN |
1-282-00273-2
9786612002731 0-8155-1757-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
""Contributors""; ""Contents""; ""1 Perspective on Past, Present and Future Uses of Ion Beam Technology""; ""Part I Ion Beam Technology""; ""2 Gridded Broad-Beam Ion Sources""; ""3 ECR Ion Sources""; ""4 Hall Effect Ion Sources""; ""5 Ionized Cluster Beam (ICB) Deposition and Epitaxy""; ""Part II Sputtering Phenomena""; ""6 Quantitative Sputtering""; ""7 Laser-Induced Fluorescence as a Tool for the Study of Ion Beam Sputtering""; ""8 Characterization of Atoms Desorbed from Surfaces by Ion Bombardment Using Multiphoton Ionization Detection""
""9 The Application of Postionization for Sputtering Studies and Surface or Thin Film Analysis""""Part III Film Modificaton and Synthesis""; ""10 The Modification of Films by Ion Bombardment""; ""11 Control of Film Properties by lon-Assisted Deposition Using Broad Beam Sources""; ""12 Etching wiith Directed Beams""; ""13 Film Growth Modification by Concurrent Ion Bombardment: Theory and Simulation""; ""14 Interface Structure and Thin Film Adhesion""; ""15 Modification of Thin Films by Off-Normal Incidence Ion Bornbardment""; ""16 Ion Beam Interactions with Pollymer Surfaces"" ""17 Topography: Texturing Effects""""18 Methods and Techniques of Ion Beam Processes""; ""19 lon-Assisted Dielectric and Optical Coatings""; ""20 Diamond and Diamond-like Thin Films by Ion Beam Techniques""; ""Index"" |
| Record Nr. | UNINA-9911006980703321 |
| Park Ridge, N.J., U.S.A., : Noyes Publications, c1989 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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IIT 2002 proceedings : ion implantation technology : 2002 14th International Conference on Ion Implantation Technology proceedings, Taos, New Mexico, USA, 22-27 September 2002
| IIT 2002 proceedings : ion implantation technology : 2002 14th International Conference on Ion Implantation Technology proceedings, Taos, New Mexico, USA, 22-27 September 2002 |
| Pubbl/distr/stampa | [Place of publication not identified] : , : IEEE, , 2002 |
| Disciplina | 621.3815/2 |
| Soggetto topico |
Semiconductors
Ion implantation Semiconductor doping Electrical & Computer Engineering Engineering & Applied Sciences Electrical Engineering |
| Soggetto genere / forma | Conference papers and proceedings. |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910872418303321 |
| [Place of publication not identified] : , : IEEE, , 2002 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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IIT 2002 proceedings : ion implementation technology : 2002 14th International Conference on Ion Implantation Technology proceedings, Taos, New Mexico, USA, 22-27 September 2002
| IIT 2002 proceedings : ion implementation technology : 2002 14th International Conference on Ion Implantation Technology proceedings, Taos, New Mexico, USA, 22-27 September 2002 |
| Pubbl/distr/stampa | [Place of publication not identified], : IEEE, 2002 |
| Disciplina | 621.3815/2 |
| Soggetto topico |
Semiconductors
Ion implantation Semiconductor doping Electrical & Computer Engineering Engineering & Applied Sciences Electrical Engineering |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996202408903316 |
| [Place of publication not identified], : IEEE, 2002 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
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Investigation of paramagnetic response of metallic epoxies [[electronic resource] /] / by Robert L. Ash and Hoshang Chegini
| Investigation of paramagnetic response of metallic epoxies [[electronic resource] /] / by Robert L. Ash and Hoshang Chegini |
| Autore | Ash Robert L |
| Pubbl/distr/stampa | Hampton, VA : , : National Aeronautics and Space Administration, Langley Research Center, , [1986] |
| Descrizione fisica | 1 online resource (27 unnumbered pages) |
| Altri autori (Persone) | CheginiHoshang |
| Collana | NASA-CR |
| Soggetto topico |
Epoxy resins
Ion implantation Metallicity Paramagnetism |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910701238703321 |
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Ash Robert L
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| Hampton, VA : , : National Aeronautics and Space Administration, Langley Research Center, , [1986] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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