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Fundamentals of infrared detector materials / / Michael A. Kinch
| Fundamentals of infrared detector materials / / Michael A. Kinch |
| Autore | Kinch Michael A |
| Pubbl/distr/stampa | Bellingham, Wash., : SPIE Press, c2007 |
| Descrizione fisica | 1 online resource (186 p.) |
| Disciplina | 621.36/2 |
| Collana | Tutorial texts in optical engineering |
| Soggetto topico | Infrared detectors - Materials |
| ISBN |
1-61583-715-9
0-8194-7874-1 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
1. Introduction. 2. IR detector performance criteria. 2.1. Photon detectors -- 2.2. Thermal detectors.
3. IR detector materials: a technology comparison. 3.1. Intrinsic direct bandgap semiconductor -- 3.2. Extrinsic semiconductor -- 3.3. Quantum well IR photodetectors (QWIPs) -- 3.4. Silicon schottky barrier detectors -- 3.5. High-temperature superconductor -- 3.6. Conclusions. 4. Intrinsic direct bandgap semiconductors. 4.1. Minority carrier lifetime -- 4.2. Diode dark current models -- 4.3. Binary compounds -- 4.4. Ternary alloys -- 4.5. Pb1-x SnxTe -- 4.6. Type III superlattices -- 4.7. Type II superlattices -- 4.8. Direct bandgap materials: conclusions. 5. HgCdTe: material of choice for tactical systems. 5.1. HgCdTe material properties -- 5.2. HgCdTe device architectures -- 5.3. ROIC requirements -- 5.4. Detector performance -- 5.5. HgCdTe: conclusions. 6. Uncooled detection. 6.1. Thermal detection -- 6.2. Photon detection -- 6.3. Uncooled photon vs. thermal detection limits -- 6.4. Uncooled detection: conclusions. 7. HgCdTe electron avalanche photodiodes (EAPDs). 7.1. McIntyre's avalanche photodiode model -- 7.2. Physics of HgCdTe EAPDs -- 7.3. Empirical model for electron avalanche gain in HgCdTe -- 7.4. Room-temperature HgCdTe APD performance -- 7.5. Monte Carlo modeling -- 7.6. Conclusions. 8. Future HgCdTe developments. 8.1. Dark current model -- 8.2. The separate absorption and detection diode structure -- 8.3. Multicolor and multispectral FPAs -- 8.4. High-density FPAs -- 8.5. Low background operation -- 8.6. Higher operating temperatures -- 8.7. Conclusion -- Epilogue -- Appendix A. Mathcad program for HgCdTe diode dark -- Current modeling -- References -- About the author -- Index. |
| Record Nr. | UNINA-9911004806303321 |
Kinch Michael A
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| Bellingham, Wash., : SPIE Press, c2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Mercury cadmium telluride : growth, properties, and applications / / edited by Peter Capper and James Garland
| Mercury cadmium telluride : growth, properties, and applications / / edited by Peter Capper and James Garland |
| Autore | Capper Peter |
| Edizione | [11th ed.] |
| Pubbl/distr/stampa | Chichester, England : , : Wiley, , 2011 |
| Descrizione fisica | 1 online resource (600 p.) |
| Disciplina | 661/.0726 |
| Collana | Wiley Series in Materials for Electronic & Optoelectronic Applications |
| Soggetto topico |
Mercury cadmium tellurides
Semiconductors - Doping Infrared detectors - Materials |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-119-95757-5
1-282-78266-5 9786612782664 0-470-66946-2 0-470-66945-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Mercury Cadmium Telluride; Contents; Series Preface; Preface; Foreword; List of Contributors; Part One - Growth; 1 Bulk Growth of Mercury Cadmium Telluride (MCT); 2 Bulk Growth of CdZnTe/CdTe Crystals; 3 Properties of Cd(Zn)Te Relevant to Use as Substrates; 4 Substrates for the Epitaxial Growth of MCT; 5 Liquid Phase Epitaxy of MCT; 6 Metal-Organic Vapor Phase Epitaxy (MOVPE) Growth; 7 MBE Growth of Mercury Cadmium Telluride; Part Two - Properties; 8 Mechanical and Thermal Properties; 9 Optical Properties of MCT; 10 Diffusion in MCT; 11 Defects in HgCdTe ̈C Fundamental
12 Band Structure and Related Properties of HgCdTe13 Conductivity Type Conversion; 14 Extrinsic Doping; 15 Structure and Electrical Characteristics of Metal/MCT Interfaces; 16 MCT Superlattices for VLWIR Detectors and Focal Plane Arrays; 17 Dry Plasma Processing of Mercury Cadmium Telluride and Related II-VIs; 18 MCT Photoconductive Infrared Detectors; Part Three - Applications; 19 HgCdTe Photovoltaic Infrared Detectors; 20 Nonequilibrium, Dual-Band and Emission Devices; 21 HgCdTe Electron Avalanche Photodiodes (EAPDs); 22 Room Temperature IR Photodetectors; Index |
| Record Nr. | UNINA-9910140800603321 |
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Capper Peter
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| Chichester, England : , : Wiley, , 2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Mercury cadmium telluride : growth, properties, and applications / / edited by Peter Capper and James Garland
| Mercury cadmium telluride : growth, properties, and applications / / edited by Peter Capper and James Garland |
| Autore | Capper Peter |
| Edizione | [11th ed.] |
| Pubbl/distr/stampa | Chichester, England : , : Wiley, , 2011 |
| Descrizione fisica | 1 online resource (600 p.) |
| Disciplina | 661/.0726 |
| Collana | Wiley Series in Materials for Electronic & Optoelectronic Applications |
| Soggetto topico |
Mercury cadmium tellurides
Semiconductors - Doping Infrared detectors - Materials |
| ISBN |
1-119-95757-5
1-282-78266-5 9786612782664 0-470-66946-2 0-470-66945-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Mercury Cadmium Telluride; Contents; Series Preface; Preface; Foreword; List of Contributors; Part One - Growth; 1 Bulk Growth of Mercury Cadmium Telluride (MCT); 2 Bulk Growth of CdZnTe/CdTe Crystals; 3 Properties of Cd(Zn)Te Relevant to Use as Substrates; 4 Substrates for the Epitaxial Growth of MCT; 5 Liquid Phase Epitaxy of MCT; 6 Metal-Organic Vapor Phase Epitaxy (MOVPE) Growth; 7 MBE Growth of Mercury Cadmium Telluride; Part Two - Properties; 8 Mechanical and Thermal Properties; 9 Optical Properties of MCT; 10 Diffusion in MCT; 11 Defects in HgCdTe ̈C Fundamental
12 Band Structure and Related Properties of HgCdTe13 Conductivity Type Conversion; 14 Extrinsic Doping; 15 Structure and Electrical Characteristics of Metal/MCT Interfaces; 16 MCT Superlattices for VLWIR Detectors and Focal Plane Arrays; 17 Dry Plasma Processing of Mercury Cadmium Telluride and Related II-VIs; 18 MCT Photoconductive Infrared Detectors; Part Three - Applications; 19 HgCdTe Photovoltaic Infrared Detectors; 20 Nonequilibrium, Dual-Band and Emission Devices; 21 HgCdTe Electron Avalanche Photodiodes (EAPDs); 22 Room Temperature IR Photodetectors; Index |
| Record Nr. | UNINA-9910830146103321 |
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Capper Peter
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| Chichester, England : , : Wiley, , 2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Mercury cadmium telluride : growth, properties, and applications / / edited by Peter Capper and James Garland
| Mercury cadmium telluride : growth, properties, and applications / / edited by Peter Capper and James Garland |
| Edizione | [11th ed.] |
| Pubbl/distr/stampa | Hoboken, NJ, : Wiley, 2010 |
| Descrizione fisica | 1 online resource (600 p.) |
| Disciplina | 661/.0726 |
| Altri autori (Persone) |
CapperPeter
GarlandJames <1933-> |
| Collana | Wiley Series in Materials for Electronic & Optoelectronic Applications |
| Soggetto topico |
Mercury cadmium tellurides
Semiconductor doping Infrared detectors - Materials |
| ISBN |
9786612782664
9781119957577 1119957575 9781282782662 1282782665 9780470669464 0470669462 9780470669457 0470669454 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Mercury Cadmium Telluride; Contents; Series Preface; Preface; Foreword; List of Contributors; Part One - Growth; 1 Bulk Growth of Mercury Cadmium Telluride (MCT); 2 Bulk Growth of CdZnTe/CdTe Crystals; 3 Properties of Cd(Zn)Te Relevant to Use as Substrates; 4 Substrates for the Epitaxial Growth of MCT; 5 Liquid Phase Epitaxy of MCT; 6 Metal-Organic Vapor Phase Epitaxy (MOVPE) Growth; 7 MBE Growth of Mercury Cadmium Telluride; Part Two - Properties; 8 Mechanical and Thermal Properties; 9 Optical Properties of MCT; 10 Diffusion in MCT; 11 Defects in HgCdTe ̈C Fundamental
12 Band Structure and Related Properties of HgCdTe13 Conductivity Type Conversion; 14 Extrinsic Doping; 15 Structure and Electrical Characteristics of Metal/MCT Interfaces; 16 MCT Superlattices for VLWIR Detectors and Focal Plane Arrays; 17 Dry Plasma Processing of Mercury Cadmium Telluride and Related II-VIs; 18 MCT Photoconductive Infrared Detectors; Part Three - Applications; 19 HgCdTe Photovoltaic Infrared Detectors; 20 Nonequilibrium, Dual-Band and Emission Devices; 21 HgCdTe Electron Avalanche Photodiodes (EAPDs); 22 Room Temperature IR Photodetectors; Index |
| Record Nr. | UNINA-9911019131203321 |
| Hoboken, NJ, : Wiley, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Mercury cadmium telluride imagers : a patent-oriented survey / / Anders C. Onshage
| Mercury cadmium telluride imagers : a patent-oriented survey / / Anders C. Onshage |
| Autore | Onshage Anders C |
| Pubbl/distr/stampa | New York, : Elsevier, 1997 |
| Descrizione fisica | 1 online resource (457 p.) |
| Disciplina |
629.80272
681/.25 21 621.367 |
| Collana | Handbook of sensors and actuators |
| Soggetto topico |
Infrared detectors - Materials
Mercury cadmium tellurides Imaging systems |
| ISBN |
1-281-03638-2
9786611036386 0-08-052401-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front Cover; Mercury Cadmium Telluride Imagers: A Patent-oriented Survey; Copyright Page; Contents; Introduction; Part One: Monolithic Arrays; Chapter 1.1 Charge Coupled Device Imagers; Chapter 1.2 Ambipolar Drift Field Imagers; Chapter 1.3 Static Induction Transistor Imagers; Chapter 1.4 Charge Injection Device Imagers; Chapter 1.5 Charge Imaging Matrices; Part Two: Hybrid Arrays; Chapter 2.1 Detector Arrays with Individual Detector Element Read-Out Leads Detector elements are provided with individual read-out leads formed in or on a non-active supporting substrate.
Chapter 2.2 Detector Arrays without Individual Detector Element Read-Out Leads Individual detector elements are provided with bump connectors or with no connectors at all.- Cross-Talk Preventing Measures; - Passivation and Leakage Current Preventing Measures; Chapter 2.3 Flip-Chip Arrangements; - Thermal Stress Preventing Measures; Chapter 2.4 Z-Technology Arrangements; Chapter 2.5 Detector Arrays Directly Contacting the Read-Out Chip; - Connections made by Through Hole Technologies; Patent Number Index; Inventor Index; Company Index; Subject Index |
| Record Nr. | UNINA-9911006530203321 |
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Onshage Anders C
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| New York, : Elsevier, 1997 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Near infrared detectors based on silicon supersaturated with transition metals : doctoral thesis accepted by universidad complutense de madrid, madrid, spain / / Daniel Montero AÌlvarez
| Near infrared detectors based on silicon supersaturated with transition metals : doctoral thesis accepted by universidad complutense de madrid, madrid, spain / / Daniel Montero AÌlvarez |
| Autore | Montero AÌlvarez Daniel |
| Edizione | [1st ed. 2021.] |
| Pubbl/distr/stampa | Cham, Switzerland : , : Springer, , [2021] |
| Descrizione fisica | 1 online resource (XXXVI, 230 p. 137 illus., 124 illus. in color.) |
| Disciplina | 620.11297 |
| Collana | Springer Theses, Recognizing Outstanding Ph.D. Research |
| Soggetto topico |
Silicon compounds
Infrared detectors - Materials |
| ISBN | 3-030-63826-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Introduction -- Experimental techniques -- Results: NLA using a short pulse duration KrF laser -- Results: NLA using a long pulse duration XeCl laser -- Results: Integrating the supersaturated material in a CMOS pixel matrix. |
| Record Nr. | UNINA-9910484116603321 |
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Montero AÌlvarez Daniel
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| Cham, Switzerland : , : Springer, , [2021] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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