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AT'95 : Advanced Technologies Intelligent Vision : October 6, 1995, Y-Parc, Yverdon, Switzerland : proceedings / / Institute of Electrical and Electronics Engineers ; edited by D. Mlynek
| AT'95 : Advanced Technologies Intelligent Vision : October 6, 1995, Y-Parc, Yverdon, Switzerland : proceedings / / Institute of Electrical and Electronics Engineers ; edited by D. Mlynek |
| Pubbl/distr/stampa | Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 1995 |
| Descrizione fisica | 1 online resource (218 pages) |
| Disciplina | 621.367 |
| Soggetto topico |
Image processing
Optoelectronic devices Image converters Imaging systems Computer vision |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996204459503316 |
| Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers, , 1995 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
Digital color : acquisition, perception, coding and rendering / / edited by Christine Fernández-Maloine, Frédérique Robert-Inacio, Ludovic Macaire
| Digital color : acquisition, perception, coding and rendering / / edited by Christine Fernández-Maloine, Frédérique Robert-Inacio, Ludovic Macaire |
| Pubbl/distr/stampa | London : , : ISTE |
| Descrizione fisica | 1 online resource (330 p.) |
| Disciplina | 006.6 |
| Collana | ISTE |
| Soggetto topico |
Image converters
Digital images Color vision Color photography - Digital techniques |
| ISBN |
1-118-56268-2
1-118-56324-7 1-118-56269-0 1-299-18892-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Cover; Title Page; Copyright Page; Table of Contents; Foreword; Chapter 1. Colorimetry and Physiology - The LMS Specification; 1.1. Physiological basis; 1.1.1. The photoreceptors; 1.1.2. Retinal organization; 1.1.3. Physiological modeling of visual attributes related to color; 1.2. The XYZ colorimetry: the benchmark model of CIE; 1.3. LMS colorimetry; 1.3.1. LMS fundamentals; 1.3.2. Application of LMS colorimetry; 1.3.3. Color discrimination; 1.4. Colors in their context; 1.4.1. CIECAM02; 1.4.2. Chromatic adaptation; 1.4.3. Partitioning of the perceptual space by the elementary hues
1.5. Conclusion1.6. Bibliography; Chapter 2. Color Constancy; 2.1. Introduction; 2.2. Theoretical preliminaries and problems; 2.2.1. Concept of illuminant; 2.2.2. Concept of objects' reflectance; 2.2.3. Problem of color constancy; 2.3. Color constancy models; 2.3.1. Model of the human visual system; 2.3.2. Von Kries diagonal model; 2.3.3. Land theory; 2.4. Color correction algorithms; 2.4.1. Gray world; 2.4.2. Retinex theory; 2.4.3. Gamut conversion; 2.4.4. Probabilistic methods; 2.4.5. Method based on neural networks; 2.4.6. ACE: automatic color equalization 2.4.7. Methods combining several approaches2.5. Comparison of color constancy algorithms; 2.5.1. Algorithms evaluation; 2.5.2. Examples of applications with specific patterns; 2.6. Conclusion; 2.7. Bibliography; Chapter 3. Color Appearance Models; 3.1. Introduction; 3.2. The two perceptual phenomena of color appearance; 3.3. The main components of a CAM; 3.3.1. Chromatic adaptation models; 3.3.2. The perceptual attributes; 3.3.3. General architecture of CAMs standardized by the CIE; 3.4. The CIECAM02; 3.4.1. Input data; 3.4.2. The chromatic adaptation transform 3.4.3. The appearance attributes3.5. Conclusion; 3.6. Bibliography; Chapter 4. Rendering and Computer Graphics; 4.1. Introduction; 4.2. Reflection and representation models of light sources; 4.2.1. Concept of luminance; 4.2.2. Representation of the light sources; 4.2.3. Reflection and refraction models; 4.3. Simulation of light propagation; 4.3.1. Light propagation model: the rendering equation; 4.3.2. Solution of the rendering equation; 4.4. Display of results; 4.4.1. LDR and HDR Images; 4.4.2. Tone mapping; 4.4.3. Management of spectral aspects; 4.4.4. Computer graphics and perception 4.5. Conclusion4.6. Bibliography; Chapter 5. Image Sensor Technology; 5.1. Photodetection principle; 5.1.1. The photodiode; 5.1.2. The photoMOS; 5.2. Imagers; 5.2.1. CMOS and CCD technologies; 5.2.2. CCD (charge coupled device) imager principle; 5.2.3. CMOS imagers principle; 5.2.4. Photodiode pixel in current mode; 5.2.5. Photodiode pixel in integration mode; 5.3. Spectral sensitivity of imagers; 5.4. Color acquisition systems; 5.5. Through monochrome camera; 5.6. Tri-sensor systems; 5.7. Color camera based on color filter arrays; 5.7.1. Types of filters; 5.8. Variants of integrated sensors 5.8.1. Backside illumination: Sony, Omnivision |
| Record Nr. | UNINA-9910138856003321 |
| London : , : ISTE | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Digital color : acquisition, perception, coding and rendering / / edited by Christine Fernández-Maloine, Frédérique Robert-Inacio, Ludovic Macaire
| Digital color : acquisition, perception, coding and rendering / / edited by Christine Fernández-Maloine, Frédérique Robert-Inacio, Ludovic Macaire |
| Pubbl/distr/stampa | London : , : ISTE |
| Descrizione fisica | 1 online resource (330 p.) |
| Disciplina | 006.6 |
| Collana | ISTE |
| Soggetto topico |
Image converters
Digital images Color vision Color photography - Digital techniques |
| ISBN |
1-118-56268-2
1-118-56324-7 1-118-56269-0 1-299-18892-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Cover; Title Page; Copyright Page; Table of Contents; Foreword; Chapter 1. Colorimetry and Physiology - The LMS Specification; 1.1. Physiological basis; 1.1.1. The photoreceptors; 1.1.2. Retinal organization; 1.1.3. Physiological modeling of visual attributes related to color; 1.2. The XYZ colorimetry: the benchmark model of CIE; 1.3. LMS colorimetry; 1.3.1. LMS fundamentals; 1.3.2. Application of LMS colorimetry; 1.3.3. Color discrimination; 1.4. Colors in their context; 1.4.1. CIECAM02; 1.4.2. Chromatic adaptation; 1.4.3. Partitioning of the perceptual space by the elementary hues
1.5. Conclusion1.6. Bibliography; Chapter 2. Color Constancy; 2.1. Introduction; 2.2. Theoretical preliminaries and problems; 2.2.1. Concept of illuminant; 2.2.2. Concept of objects' reflectance; 2.2.3. Problem of color constancy; 2.3. Color constancy models; 2.3.1. Model of the human visual system; 2.3.2. Von Kries diagonal model; 2.3.3. Land theory; 2.4. Color correction algorithms; 2.4.1. Gray world; 2.4.2. Retinex theory; 2.4.3. Gamut conversion; 2.4.4. Probabilistic methods; 2.4.5. Method based on neural networks; 2.4.6. ACE: automatic color equalization 2.4.7. Methods combining several approaches2.5. Comparison of color constancy algorithms; 2.5.1. Algorithms evaluation; 2.5.2. Examples of applications with specific patterns; 2.6. Conclusion; 2.7. Bibliography; Chapter 3. Color Appearance Models; 3.1. Introduction; 3.2. The two perceptual phenomena of color appearance; 3.3. The main components of a CAM; 3.3.1. Chromatic adaptation models; 3.3.2. The perceptual attributes; 3.3.3. General architecture of CAMs standardized by the CIE; 3.4. The CIECAM02; 3.4.1. Input data; 3.4.2. The chromatic adaptation transform 3.4.3. The appearance attributes3.5. Conclusion; 3.6. Bibliography; Chapter 4. Rendering and Computer Graphics; 4.1. Introduction; 4.2. Reflection and representation models of light sources; 4.2.1. Concept of luminance; 4.2.2. Representation of the light sources; 4.2.3. Reflection and refraction models; 4.3. Simulation of light propagation; 4.3.1. Light propagation model: the rendering equation; 4.3.2. Solution of the rendering equation; 4.4. Display of results; 4.4.1. LDR and HDR Images; 4.4.2. Tone mapping; 4.4.3. Management of spectral aspects; 4.4.4. Computer graphics and perception 4.5. Conclusion4.6. Bibliography; Chapter 5. Image Sensor Technology; 5.1. Photodetection principle; 5.1.1. The photodiode; 5.1.2. The photoMOS; 5.2. Imagers; 5.2.1. CMOS and CCD technologies; 5.2.2. CCD (charge coupled device) imager principle; 5.2.3. CMOS imagers principle; 5.2.4. Photodiode pixel in current mode; 5.2.5. Photodiode pixel in integration mode; 5.3. Spectral sensitivity of imagers; 5.4. Color acquisition systems; 5.5. Through monochrome camera; 5.6. Tri-sensor systems; 5.7. Color camera based on color filter arrays; 5.7.1. Types of filters; 5.8. Variants of integrated sensors 5.8.1. Backside illumination: Sony, Omnivision |
| Record Nr. | UNINA-9910822623403321 |
| London : , : ISTE | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Imaging gaseous detectors and their applications [[electronic resource] /] / Eugenio Nappi and Vladimir Peskov
| Imaging gaseous detectors and their applications [[electronic resource] /] / Eugenio Nappi and Vladimir Peskov |
| Autore | Nappi Eugenio |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, 2013 |
| Descrizione fisica | 1 online resource (358 p.) |
| Disciplina | 539.77 |
| Altri autori (Persone) | PeskovVladimir |
| Soggetto topico |
Image converters
Gas detectors |
| ISBN |
3-527-64029-0
3-527-64030-4 1-299-40215-1 3-527-64031-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Imaging Gaseous Detectors and Their Applications; Contents; Preface; Color Plates; 1 Introduction; 1.1 Exploring the Universe by Detecting Photons and Particles; 1.2 Detectors of Photons and Charged Particles; 1.2.1 Vacuum Detectors; 1.2.2 Gaseous Detectors; 1.2.3 Liquid Detectors; 1.2.4 Solid-State Detectors; 1.2.5 Combination of Imaging Detectors with Scintillators; 1.2.6 Hybrid Imaging Detectors; 1.2.6.1 Vacuum Hybrid Detectors; 1.2.6.2 Gaseous Hybrid Detectors; 1.2.6.3 Liquid Hybrid Detectors; References; 2 Basic Processes in Gaseous Detectors
2.1 Interaction of Charged Particles and Photons with Matter 2.1.1 Ionization Energy Loss; 2.1.2 Interaction of Photons with Matter; 2.1.2.1 Interaction of Photons with Gases; 2.1.2.2 Interaction of Photons with Liquids; 2.1.2.3 Interaction of Photons with Metals and Other Solid Materials; 2.2 Drift of Electrons and Ions in Gases; 2.2.1 Drift of Electrons; 2.2.2 Drift of Ions; 2.3 Some remarks on the Diffusion; 2.3.1 Diffusion of Ions in Electric Fields; 2.3.2 Diffusion of Electrons in Electric Fields; 2.3.3 Drift and Diffusion of Electrons Moving in Electric and Magnetic Fields 2.4 Avalanche Multiplication in Gases References; 3 Traditional Position-Sensitive Gaseous Detectors and Their Historical Development: from the Geiger Counter to the Multi-wire Proportional Chamber (1905 till 1968); 3.1 Geiger and Spark Counters; 3.1.1 Single-Wire Counters; 3.1.1.1 Geiger Counters; 3.1.2 Proportional Counters; 3.1.2.1 Energy Resolution; 3.1.2.2 Position Resolution; 3.1.3 Physics Processes in Single-wire Counters; 3.1.4 A Peculiar Type of Proportional Counter: the Gas Scintillation Counter; 3.2 Parallel-Plate Spark and Streamer Detectors; 3.2.1 Spark Counters 3.2.2 Streamer Chambers 3.3 Further Developments: Pulsed High frequency Detectors; References; 4 The Multi Wire Proportional Chamber Era; References; 5 More in Depth about Gaseous Detectors; 5.1 Pulse-Shape Formation in Gaseous Detectors in Absence of Secondary Effects; 5.1.1 Parallel-Plate Geometry; 5.1.2 Cylindrical Geometry; 5.1.3 MWPC Geometry; 5.2 Townsend Avalanches and Secondary Processes; 5.2.1 Role of Photon Emission; 5.2.1.1 Emission Spectra; 5.2.1.2 Photo effect on the Cathode; 5.2.1.3 Gas Photoionization; 5.2.2 Role of the Positive Ions 5.2.2.1 Ion Recombination on the Cathode in Vacuum 5.2.2.2 Recombination on the Cathode in Gas; 5.2.3 Role of Excited and Metastable Atoms; 5.3 Discharges in Gaseous Detectors; 5.3.1 Slow Breakdown; 5.3.2 Fast Breakdown; 5.3.3 Self-Quenched Streamers in Gas-Filled Wire Detectors; 5.4 Features of Operation of Wire Detectors at High Counting Rates; 5.5 After pulses and the Cathode-""Excitation"" Effect; References; 6 New Ideas on Gaseous Detectors Conceived during the Early Years of the ""Multi Wire Proportional Chambers"" Era (1968-1977); 6.1 Drift Chambers; 6.2 Time Projection Chamber 6.3 First Designs of Resistive-Plate Chambers |
| Record Nr. | UNINA-9910139046603321 |
Nappi Eugenio
|
||
| Weinheim, : Wiley-VCH, 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Imaging gaseous detectors and their applications [[electronic resource] /] / Eugenio Nappi and Vladimir Peskov
| Imaging gaseous detectors and their applications [[electronic resource] /] / Eugenio Nappi and Vladimir Peskov |
| Autore | Nappi Eugenio |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, 2013 |
| Descrizione fisica | 1 online resource (358 p.) |
| Disciplina | 539.77 |
| Altri autori (Persone) | PeskovVladimir |
| Soggetto topico |
Image converters
Gas detectors |
| ISBN |
3-527-64029-0
3-527-64030-4 1-299-40215-1 3-527-64031-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Imaging Gaseous Detectors and Their Applications; Contents; Preface; Color Plates; 1 Introduction; 1.1 Exploring the Universe by Detecting Photons and Particles; 1.2 Detectors of Photons and Charged Particles; 1.2.1 Vacuum Detectors; 1.2.2 Gaseous Detectors; 1.2.3 Liquid Detectors; 1.2.4 Solid-State Detectors; 1.2.5 Combination of Imaging Detectors with Scintillators; 1.2.6 Hybrid Imaging Detectors; 1.2.6.1 Vacuum Hybrid Detectors; 1.2.6.2 Gaseous Hybrid Detectors; 1.2.6.3 Liquid Hybrid Detectors; References; 2 Basic Processes in Gaseous Detectors
2.1 Interaction of Charged Particles and Photons with Matter 2.1.1 Ionization Energy Loss; 2.1.2 Interaction of Photons with Matter; 2.1.2.1 Interaction of Photons with Gases; 2.1.2.2 Interaction of Photons with Liquids; 2.1.2.3 Interaction of Photons with Metals and Other Solid Materials; 2.2 Drift of Electrons and Ions in Gases; 2.2.1 Drift of Electrons; 2.2.2 Drift of Ions; 2.3 Some remarks on the Diffusion; 2.3.1 Diffusion of Ions in Electric Fields; 2.3.2 Diffusion of Electrons in Electric Fields; 2.3.3 Drift and Diffusion of Electrons Moving in Electric and Magnetic Fields 2.4 Avalanche Multiplication in Gases References; 3 Traditional Position-Sensitive Gaseous Detectors and Their Historical Development: from the Geiger Counter to the Multi-wire Proportional Chamber (1905 till 1968); 3.1 Geiger and Spark Counters; 3.1.1 Single-Wire Counters; 3.1.1.1 Geiger Counters; 3.1.2 Proportional Counters; 3.1.2.1 Energy Resolution; 3.1.2.2 Position Resolution; 3.1.3 Physics Processes in Single-wire Counters; 3.1.4 A Peculiar Type of Proportional Counter: the Gas Scintillation Counter; 3.2 Parallel-Plate Spark and Streamer Detectors; 3.2.1 Spark Counters 3.2.2 Streamer Chambers 3.3 Further Developments: Pulsed High frequency Detectors; References; 4 The Multi Wire Proportional Chamber Era; References; 5 More in Depth about Gaseous Detectors; 5.1 Pulse-Shape Formation in Gaseous Detectors in Absence of Secondary Effects; 5.1.1 Parallel-Plate Geometry; 5.1.2 Cylindrical Geometry; 5.1.3 MWPC Geometry; 5.2 Townsend Avalanches and Secondary Processes; 5.2.1 Role of Photon Emission; 5.2.1.1 Emission Spectra; 5.2.1.2 Photo effect on the Cathode; 5.2.1.3 Gas Photoionization; 5.2.2 Role of the Positive Ions 5.2.2.1 Ion Recombination on the Cathode in Vacuum 5.2.2.2 Recombination on the Cathode in Gas; 5.2.3 Role of Excited and Metastable Atoms; 5.3 Discharges in Gaseous Detectors; 5.3.1 Slow Breakdown; 5.3.2 Fast Breakdown; 5.3.3 Self-Quenched Streamers in Gas-Filled Wire Detectors; 5.4 Features of Operation of Wire Detectors at High Counting Rates; 5.5 After pulses and the Cathode-""Excitation"" Effect; References; 6 New Ideas on Gaseous Detectors Conceived during the Early Years of the ""Multi Wire Proportional Chambers"" Era (1968-1977); 6.1 Drift Chambers; 6.2 Time Projection Chamber 6.3 First Designs of Resistive-Plate Chambers |
| Record Nr. | UNINA-9910813588603321 |
|
Nappi Eugenio
|
||
| Weinheim, : Wiley-VCH, 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Imaging Sensors and Technologies / / Gonzalo Pajares Martinsanz
| Imaging Sensors and Technologies / / Gonzalo Pajares Martinsanz |
| Autore | Martinsanz Gonzalo Pajares |
| Pubbl/distr/stampa | Basel : , : MDPI - Multidisciplinary Digital Publishing Institute, , 2017 |
| Descrizione fisica | 1 online resource (ix, 620 pages) : illustrations |
| Disciplina | 621.367 |
| Collana | Sensors |
| Soggetto topico | Image converters |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | About the Guest Editor -- Preface to "Imaging: Sensors and Technologies" -- Depth Errors Analysis and Correction for Time-of-Flight (ToF) Cameras -- Expanding the Detection of Traversable Area with RealSense for the Visually Impaired -- A 3D Optical Surface Profilometer Using a Dual-Frequency Liquid Crystal-Based Dynamic Fringe Pattern Generator -- Graphical Models -- Are We Ready to Build a System for Assisting Blind People in Tactile Exploration of Bas-Reliefs? -- Extracting Objects for Aerial Manipulation on UAVs Using Low Cost Stereo Sensors -- Reliable Fusion of Stereo Matching and Depth Sensor for High Quality Dense Depth Maps -- Simulated and Real Sheet-of-Light 3D Object Scanning Using a-Si:H Thin Film PSD Arrays -- An Indoor Obstacle Detection System Using Depth Information and Region Growth -- Target Detection over the Diurnal Cycle Using a Multispectral Infrared Sensor -- Color Restoration of RGBN Multispectral Filter Array Sensor Images Based on -- Penetration Depth Measurement of Near-Infrared Hyperspectral Imaging Light for Milk Powder -- Forward-Looking Infrared Cameras for Micrometeorological Applications within Vineyards -- Test of the Practicality and Feasibility of EDoF-Empowered Image Sensors for Long-Range Biometrics -- Nonintrusive Finger-Vein Recognition System Using NIR Image Sensor and Accuracy Analyses According to Various Factors -- Full-Field Optical Coherence Tomography Using Galvo Filter-Based Wavelength Swept Laser -- A Selective Change Driven System for High-Speed Motion Analysis -- Geometric Calibration and Validation of Kompsat-3A AEISS-A Camera -- Design and Evaluation of a Scalable and Reconfigurable Multi-Platform System for Acoustic Imaging -- Underwater Imaging Using a 1 × 16 CMUT Linear Array -- Ultraviolet Imaging with Low Cost Smartphone Sensors: Development and Application of a Raspberry Pi-Based UV Camera -- Design of a Sub-Picosecond Jitter with Adjustable-Range CMOS Delay-Locked Loop for HighSpeed and Low-Power Applications -- A Low Power Digital Accumulation Technique for Digital-Domain CMOS TDI Image Sensor -- A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity -- A Fast Multiple Sampling Method for Low-Noise CMOS Image Sensors With Column-Parallel 12-bit SAR ADCs -- Long-Term Continuous Double Station Observation of Faint Meteor Showers -- Evaluation of a Wobbling Method Applied to Correcting Defective Pixels of CZT Detectors in SPECT Imaging -- A Bevel Gear Quality Inspection System Based on Multi-Camera Vision Technology -- Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors -- Time-Resolved Synchronous Fluorescence for Biomedical Diagnosis -- A High Performance Banknote Recognition System Based on a One-Dimensional Visible Light -- Uncertainty Comparison of Visual Sensing in Adverse Weather Conditions -- Object Occlusion Detection Using Automatic Camera Calibration for a Wide-Area Video Surveillance System -- A Crowd-Sourcing Indoor Localization Algorithm via Optical Camera on a Smartphone Assisted -- Parallax-Robust Surveillance Video Stitching -- Monocular-Vision-Based Autonomous Hovering for a Miniature Flying Ball -- Driver Distraction Using Visual-Based Sensors and Algorithms. |
| Altri titoli varianti | Imaging |
| Record Nr. | UNINA-9910674016303321 |
|
Martinsanz Gonzalo Pajares
|
||
| Basel : , : MDPI - Multidisciplinary Digital Publishing Institute, , 2017 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Imaging Sensors and Technologies / / Gonzalo Pajares Martinsanz
| Imaging Sensors and Technologies / / Gonzalo Pajares Martinsanz |
| Autore | Martinsanz Gonzalo Pajares |
| Pubbl/distr/stampa | Basel : , : MDPI - Multidisciplinary Digital Publishing Institute, , 2017 |
| Descrizione fisica | 1 online resource (x, 622 pages) |
| Disciplina | 621.367 |
| Soggetto topico |
Imaging systems
Image converters |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | About the Guest Editor -- Preface to "Imaging: Sensors and Technologies" -- Depth Errors Analysis and Correction for Time-of-Flight (ToF) Cameras -- Expanding the Detection of Traversable Area with RealSense for the Visually Impaired -- A 3D Optical Surface Profilometer Using a Dual-Frequency Liquid Crystal-Based Dynamic Fringe Pattern Generator -- Graphical Models -- Are We Ready to Build a System for Assisting Blind People in Tactile Exploration of Bas-Reliefs? -- Extracting Objects for Aerial Manipulation on UAVs Using Low Cost Stereo Sensors -- Reliable Fusion of Stereo Matching and Depth Sensor for High Quality Dense Depth Maps -- Simulated and Real Sheet-of-Light 3D Object Scanning Using a-Si:H Thin Film PSD Arrays -- An Indoor Obstacle Detection System Using Depth Information and Region Growth -- Target Detection over the Diurnal Cycle Using a Multispectral Infrared Sensor -- Color Restoration of RGBN Multispectral Filter Array Sensor Images Based on -- Penetration Depth Measurement of Near-Infrared Hyperspectral Imaging Light for Milk Powder -- Forward-Looking Infrared Cameras for Micrometeorological Applications within Vineyards -- Test of the Practicality and Feasibility of EDoF-Empowered Image Sensors for Long-Range Biometrics -- Nonintrusive Finger-Vein Recognition System Using NIR Image Sensor and Accuracy Analyses According to Various Factors -- Full-Field Optical Coherence Tomography Using Galvo Filter-Based Wavelength Swept Laser -- A Selective Change Driven System for High-Speed Motion Analysis -- Geometric Calibration and Validation of Kompsat-3A AEISS-A Camera -- Design and Evaluation of a Scalable and Reconfigurable Multi-Platform System for Acoustic Imaging -- Underwater Imaging Using a 1 × 16 CMUT Linear Array -- Ultraviolet Imaging with Low Cost Smartphone Sensors: Development and Application of a Raspberry Pi-Based UV Camera -- Design of a Sub-Picosecond Jitter with Adjustable-Range CMOS Delay-Locked Loop for HighSpeed and Low-Power Applications -- A Low Power Digital Accumulation Technique for Digital-Domain CMOS TDI Image Sensor -- A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity -- A Fast Multiple Sampling Method for Low-Noise CMOS Image Sensors With Column-Parallel 12-bit SAR ADCs -- Long-Term Continuous Double Station Observation of Faint Meteor Showers -- Evaluation of a Wobbling Method Applied to Correcting Defective Pixels of CZT Detectors in SPECT Imaging -- A Bevel Gear Quality Inspection System Based on Multi-Camera Vision Technology -- Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors -- Time-Resolved Synchronous Fluorescence for Biomedical Diagnosis -- A High Performance Banknote Recognition System Based on a One-Dimensional Visible Light -- Uncertainty Comparison of Visual Sensing in Adverse Weather Conditions -- Object Occlusion Detection Using Automatic Camera Calibration for a Wide-Area Video Surveillance System -- A Crowd-Sourcing Indoor Localization Algorithm via Optical Camera on a Smartphone Assisted -- Parallax-Robust Surveillance Video Stitching -- Monocular-Vision-Based Autonomous Hovering for a Miniature Flying Ball -- Driver Distraction Using Visual-Based Sensors and Algorithms. |
| Altri titoli varianti | Imaging |
| Record Nr. | UNINA-9910765836803321 |
|
Martinsanz Gonzalo Pajares
|
||
| Basel : , : MDPI - Multidisciplinary Digital Publishing Institute, , 2017 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Optoelectronic sensors [[electronic resource] /] / edited by Didier Decoster, Joseph Harari
| Optoelectronic sensors [[electronic resource] /] / edited by Didier Decoster, Joseph Harari |
| Pubbl/distr/stampa | London, UK, : ISTE |
| Descrizione fisica | 1 online resource (290 p.) |
| Disciplina |
681.25
681/.25 |
| Altri autori (Persone) |
DecosterDidier <1948->
HarariJoseph <1961-> |
| Collana | ISTE |
| Soggetto topico |
Optical detectors
Image converters |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-282-68859-6
9786612688591 0-470-61163-4 0-470-39428-5 |
| Classificazione |
ZQ 3120
ZN 5030 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Optoelectronic Sensors; Table of Contents; Preface; Chapter 1. Introduction to Semiconductor Photodetectors; 1.1. Brief overview of semiconductor materials; 1.2. Photodetection with semiconductors: basic phenomena; 1.3. Semiconductor devices; 1.4. p-n junctions and p-i-n structures; 1.5. Avalanche effect in p-i-n structures; 1.6. Schottky junction; 1.7. Metal-semiconductor-metal (MSM) structures; 1.8. Operational parameters of photodetectors; 1.8.1. Response coefficient, gain and quantum efficiency; 1.8.2. Temporal response and bandwidth; 1.8.3. Noise equivalent power; 1.8.4. Detectivity
Chapter 2. PIN Photodiodes for the Visible and Near-Infrared2.1. Introduction; 2.2. Physical processes occurring in photodiodes; 2.2.1. Electrostatics in PIN diodes: depleted region; 2.2.2. Mechanisms of electron-hole pair generation; 2.2.3. Transport mechanisms; 2.3. Static characteristics of PIN photodiodes; 2.3.1. I/V characteristics and definition of static parameters; 2.3.2. External quantum efficiency; 2.3.3. Dark current; 2.3.4. Breakdown voltage; 2.3.5. Saturation current; 2.4. Dynamic characteristics of PIN photodiodes; 2.4.1. Intrinsic limitations to the speed of response 2.4.2. Limitations due to the circuit2.4.3. Power-frequency compromise, Pf2 "law"; 2.5. Semiconductor materials used in PIN photodiodes for the visible and near-infrared; 2.5.1. Absorption of semiconductors in the range 400-1,800 nm; 2.5.2. From 400 to 900 nm: silicon and the GaAlAs/GaAs family; 2.5.3. From 900 to 1,800 nm: germanium, GaInAsP/InP; 2.6. New photodiode structures; 2.6.1. Beyond the limits of conventional PIN; 2.6.2. Photodiodes with collinear geometry; 2.6.3. Waveguide photodiodes; 2.6.4. Traveling-wave photodiodes; 2.6.5. Beyond PIN structures; 2.7. Bibliography Chapter 3. Avalanche Photodiodes3.1. Introduction; 3.2. History; 3.3. The avalanche effect; 3.3.1. Ionization coefficients; 3.3.2. Multiplication factors; 3.3.3. Breakdown voltage; 3.4. Properties of avalanche photodiodes; 3.4.1. Current-voltage characteristics and photomultiplication; 3.4.2. Noise in avalanche photodiodes; 3.4.3. Signal-to-noise ratio in avalanche photodiodes; 3.4.4. Speed, response time and frequency response of avalanche photodiodes; 3.5. Technological considerations; 3.5.1. Guard ring junctions; 3.5.2. "Mesa" structures; 3.5.3. Crystal defects and microplasmas 3.6. Silicon avalanche photodiodes3.6.1. Si N+P APDs; 3.6.2. Si N+PπP+ APDs; 3.6.3. Si N+πPπP+ APDs; 3.6.4. SiPt-Si N Schottky APDs; 3.7. Avalanche photodiodes based on gallium arsenide; 3.8. Germanium avalanche photodiodes; 3.8.1. Ge APDs with N+P, N+NP and P+N structures for 1.3 μm communication; 3.8.2. Ge APDs with P+NN- structures for 1.55 μm communication; 3.9. Avalanche photodiodes based on indium phosphate (InP); 3.9.1. InGaAs/InP APDs for optical communications at 2.5 Gbit/s; 3.9.2. Fast InGaAs/InP APDs; 3.10. III-V low-noise avalanche photodiodes 3.10.1. III-V super-lattice or MQW APDs |
| Record Nr. | UNINA-9910139624603321 |
| London, UK, : ISTE | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Optoelectronic sensors [[electronic resource] /] / edited by Didier Decoster, Joseph Harari
| Optoelectronic sensors [[electronic resource] /] / edited by Didier Decoster, Joseph Harari |
| Pubbl/distr/stampa | London, UK, : ISTE |
| Descrizione fisica | 1 online resource (290 p.) |
| Disciplina |
681.25
681/.25 |
| Altri autori (Persone) |
DecosterDidier <1948->
HarariJoseph <1961-> |
| Collana | ISTE |
| Soggetto topico |
Optical detectors
Image converters |
| ISBN |
1-282-68859-6
9786612688591 0-470-61163-4 0-470-39428-5 |
| Classificazione |
ZQ 3120
ZN 5030 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Optoelectronic Sensors; Table of Contents; Preface; Chapter 1. Introduction to Semiconductor Photodetectors; 1.1. Brief overview of semiconductor materials; 1.2. Photodetection with semiconductors: basic phenomena; 1.3. Semiconductor devices; 1.4. p-n junctions and p-i-n structures; 1.5. Avalanche effect in p-i-n structures; 1.6. Schottky junction; 1.7. Metal-semiconductor-metal (MSM) structures; 1.8. Operational parameters of photodetectors; 1.8.1. Response coefficient, gain and quantum efficiency; 1.8.2. Temporal response and bandwidth; 1.8.3. Noise equivalent power; 1.8.4. Detectivity
Chapter 2. PIN Photodiodes for the Visible and Near-Infrared2.1. Introduction; 2.2. Physical processes occurring in photodiodes; 2.2.1. Electrostatics in PIN diodes: depleted region; 2.2.2. Mechanisms of electron-hole pair generation; 2.2.3. Transport mechanisms; 2.3. Static characteristics of PIN photodiodes; 2.3.1. I/V characteristics and definition of static parameters; 2.3.2. External quantum efficiency; 2.3.3. Dark current; 2.3.4. Breakdown voltage; 2.3.5. Saturation current; 2.4. Dynamic characteristics of PIN photodiodes; 2.4.1. Intrinsic limitations to the speed of response 2.4.2. Limitations due to the circuit2.4.3. Power-frequency compromise, Pf2 "law"; 2.5. Semiconductor materials used in PIN photodiodes for the visible and near-infrared; 2.5.1. Absorption of semiconductors in the range 400-1,800 nm; 2.5.2. From 400 to 900 nm: silicon and the GaAlAs/GaAs family; 2.5.3. From 900 to 1,800 nm: germanium, GaInAsP/InP; 2.6. New photodiode structures; 2.6.1. Beyond the limits of conventional PIN; 2.6.2. Photodiodes with collinear geometry; 2.6.3. Waveguide photodiodes; 2.6.4. Traveling-wave photodiodes; 2.6.5. Beyond PIN structures; 2.7. Bibliography Chapter 3. Avalanche Photodiodes3.1. Introduction; 3.2. History; 3.3. The avalanche effect; 3.3.1. Ionization coefficients; 3.3.2. Multiplication factors; 3.3.3. Breakdown voltage; 3.4. Properties of avalanche photodiodes; 3.4.1. Current-voltage characteristics and photomultiplication; 3.4.2. Noise in avalanche photodiodes; 3.4.3. Signal-to-noise ratio in avalanche photodiodes; 3.4.4. Speed, response time and frequency response of avalanche photodiodes; 3.5. Technological considerations; 3.5.1. Guard ring junctions; 3.5.2. "Mesa" structures; 3.5.3. Crystal defects and microplasmas 3.6. Silicon avalanche photodiodes3.6.1. Si N+P APDs; 3.6.2. Si N+PπP+ APDs; 3.6.3. Si N+πPπP+ APDs; 3.6.4. SiPt-Si N Schottky APDs; 3.7. Avalanche photodiodes based on gallium arsenide; 3.8. Germanium avalanche photodiodes; 3.8.1. Ge APDs with N+P, N+NP and P+N structures for 1.3 μm communication; 3.8.2. Ge APDs with P+NN- structures for 1.55 μm communication; 3.9. Avalanche photodiodes based on indium phosphate (InP); 3.9.1. InGaAs/InP APDs for optical communications at 2.5 Gbit/s; 3.9.2. Fast InGaAs/InP APDs; 3.10. III-V low-noise avalanche photodiodes 3.10.1. III-V super-lattice or MQW APDs |
| Record Nr. | UNINA-9910831100903321 |
| London, UK, : ISTE | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Optoelectronic sensors [[electronic resource] /] / edited by Didier Decoster, Joseph Harari
| Optoelectronic sensors [[electronic resource] /] / edited by Didier Decoster, Joseph Harari |
| Pubbl/distr/stampa | London, UK, : ISTE |
| Descrizione fisica | 1 online resource (290 p.) |
| Disciplina |
681.25
681/.25 |
| Altri autori (Persone) |
DecosterDidier <1948->
HarariJoseph <1961-> |
| Collana | ISTE |
| Soggetto topico |
Optical detectors
Image converters |
| ISBN |
1-282-68859-6
9786612688591 0-470-61163-4 0-470-39428-5 |
| Classificazione |
ZQ 3120
ZN 5030 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Optoelectronic Sensors; Table of Contents; Preface; Chapter 1. Introduction to Semiconductor Photodetectors; 1.1. Brief overview of semiconductor materials; 1.2. Photodetection with semiconductors: basic phenomena; 1.3. Semiconductor devices; 1.4. p-n junctions and p-i-n structures; 1.5. Avalanche effect in p-i-n structures; 1.6. Schottky junction; 1.7. Metal-semiconductor-metal (MSM) structures; 1.8. Operational parameters of photodetectors; 1.8.1. Response coefficient, gain and quantum efficiency; 1.8.2. Temporal response and bandwidth; 1.8.3. Noise equivalent power; 1.8.4. Detectivity
Chapter 2. PIN Photodiodes for the Visible and Near-Infrared2.1. Introduction; 2.2. Physical processes occurring in photodiodes; 2.2.1. Electrostatics in PIN diodes: depleted region; 2.2.2. Mechanisms of electron-hole pair generation; 2.2.3. Transport mechanisms; 2.3. Static characteristics of PIN photodiodes; 2.3.1. I/V characteristics and definition of static parameters; 2.3.2. External quantum efficiency; 2.3.3. Dark current; 2.3.4. Breakdown voltage; 2.3.5. Saturation current; 2.4. Dynamic characteristics of PIN photodiodes; 2.4.1. Intrinsic limitations to the speed of response 2.4.2. Limitations due to the circuit2.4.3. Power-frequency compromise, Pf2 "law"; 2.5. Semiconductor materials used in PIN photodiodes for the visible and near-infrared; 2.5.1. Absorption of semiconductors in the range 400-1,800 nm; 2.5.2. From 400 to 900 nm: silicon and the GaAlAs/GaAs family; 2.5.3. From 900 to 1,800 nm: germanium, GaInAsP/InP; 2.6. New photodiode structures; 2.6.1. Beyond the limits of conventional PIN; 2.6.2. Photodiodes with collinear geometry; 2.6.3. Waveguide photodiodes; 2.6.4. Traveling-wave photodiodes; 2.6.5. Beyond PIN structures; 2.7. Bibliography Chapter 3. Avalanche Photodiodes3.1. Introduction; 3.2. History; 3.3. The avalanche effect; 3.3.1. Ionization coefficients; 3.3.2. Multiplication factors; 3.3.3. Breakdown voltage; 3.4. Properties of avalanche photodiodes; 3.4.1. Current-voltage characteristics and photomultiplication; 3.4.2. Noise in avalanche photodiodes; 3.4.3. Signal-to-noise ratio in avalanche photodiodes; 3.4.4. Speed, response time and frequency response of avalanche photodiodes; 3.5. Technological considerations; 3.5.1. Guard ring junctions; 3.5.2. "Mesa" structures; 3.5.3. Crystal defects and microplasmas 3.6. Silicon avalanche photodiodes3.6.1. Si N+P APDs; 3.6.2. Si N+PπP+ APDs; 3.6.3. Si N+πPπP+ APDs; 3.6.4. SiPt-Si N Schottky APDs; 3.7. Avalanche photodiodes based on gallium arsenide; 3.8. Germanium avalanche photodiodes; 3.8.1. Ge APDs with N+P, N+NP and P+N structures for 1.3 μm communication; 3.8.2. Ge APDs with P+NN- structures for 1.55 μm communication; 3.9. Avalanche photodiodes based on indium phosphate (InP); 3.9.1. InGaAs/InP APDs for optical communications at 2.5 Gbit/s; 3.9.2. Fast InGaAs/InP APDs; 3.10. III-V low-noise avalanche photodiodes 3.10.1. III-V super-lattice or MQW APDs |
| Record Nr. | UNINA-9910841321503321 |
| London, UK, : ISTE | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
