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Advanced semiconductor heterostructures [[electronic resource] ] : novel devices, potential device applications and basic properties / / editors, Mitra Dutta, Michael A. Stroscio
| Advanced semiconductor heterostructures [[electronic resource] ] : novel devices, potential device applications and basic properties / / editors, Mitra Dutta, Michael A. Stroscio |
| Pubbl/distr/stampa | Singapore ; ; River Edge, N.J., : World Scientific, c2003 |
| Descrizione fisica | 1 online resource (244 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) |
DuttaMitra
StroscioMichael A. <1949-> |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Heterostructures
Semiconductors - Materials |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-92823-2
9786611928230 981-277-554-4 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS; PREFACE; ELECTRON-PHONON INTERACTIONS IN INTERSUBBAND LASER HETEROSTRUCTURES; 1. Introduction; 2. Dielectric Continuum Model for Polar Excitations in Layered Heterostructures; 2.1. LO-phonon confinement in layered heterostructures; 2.2. Examples of scattering rate tailoring; 3. Multiband Description of Electron Confinement; 3.1. Analytical representation for the eigenstates; 3.2. Phenomenological boundary conditions; 3.3. Electron energy spectrum of basic heterostructures; 4. Subband Depopulation in Type-II Laser Heterostructures
4.1. Interband tunneling in InAs/GaSb ""leaky"" heterostructure4.2. Phonon enhancement of the depopulation process; 5. Conclusions; Acknowledgments; References; QUANTUM DOT INFRARED DETECTORS AND SOURCES; 1. Introduction; 2. Historical Background; 3. Self-Organized Quantum Dots for Devices; 4. Electronic Spectra and Carrier Dynamics in Self-Organized Quantum Dots; 5. Quantum Dot Infrared Detectors and Focal Plane Arrays; 6. Quantum Dot Infrared Sources; 7. Future Prospects; Acknowledgments; References; Generation of Terahertz Emission Based on Intersubband Transitions; 1. Introduction 2. Electrically pumped intersubband THz emitters2.1 THz emitters using electron-LO-phonon scattering for depopulation; 2.2. Role of interface and confined phonon modes; 2.3. Intrawell THz emitters using resonant tunneling for depopulation; 2.4 Transport issues of electrically pumped THz intersubband emitters; 3. Optically pumped intersubband THz emitters; 3.1 Intersubband pumped THz optical parametric oscillators (OPOs); 3.2 Intersubband optically pumped THz lasers; 3.3 Interband optically pumped THz emitters; Acknowledgments; References MID-INFRARED GaSb-BASED LASERS WITH TYPE-I HETEROINTERFACES1. Introduction; 2. Progress in the Design of Type-I GaSb-based Diode Lasers; 3. High-power Room-temperature CW Diode Lasers Operating in the Wavelength Range of 2.3 - 2.6-μm; 4. Conclusion; Acknowledgement; References; ADVANCES IN QUANTUM-DOT RESEARCH AND TECHNOLOGY: THE PATH TO APPLICATION IN BIOLOGY; 1. Introduction; 2. Recent Developments in the Application of Quantum Dots to Biology; 3. Recent Developments in GaAs-Based Quantum Dots; 4. Recent Developments in InAs-Based Quantum Dots 5. Recent Developments in GaSb-, GaN-, PbS-, CdTe-, InP-, and PbSe-Based Quantum Dots6. Recent Developments in CdSe-Based Quantum Dots; 7. Implementing Quantum Dot Technology in Biological Applications; Acknowledgments; References; HIGH-FIELD ELECTRON TRANSPORT CONTROLLED BY OPTICAL PHONON EMISSION IN NITRIDES; 1. Introduction; 2. The Basic Equations; 2.1. The Boltzmann equation; 2.2. New variables; 2.3. Boundary conditions; 3. Solutions of the Kinetic Equation; 3.1. General structure of solutions; 3.2. Relationships between f+, f- and F+, F-; 3.3. The zero energy stair s = 0 3.4- The first stair s = 1 |
| Record Nr. | UNINA-9910454090603321 |
| Singapore ; ; River Edge, N.J., : World Scientific, c2003 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advanced semiconductor heterostructures [[electronic resource] ] : novel devices, potential device applications and basic properties / / editors, Mitra Dutta, Michael A. Stroscio
| Advanced semiconductor heterostructures [[electronic resource] ] : novel devices, potential device applications and basic properties / / editors, Mitra Dutta, Michael A. Stroscio |
| Pubbl/distr/stampa | Singapore ; ; River Edge, N.J., : World Scientific, c2003 |
| Descrizione fisica | 1 online resource (244 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) |
DuttaMitra
StroscioMichael A. <1949-> |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Heterostructures
Semiconductors - Materials |
| ISBN |
1-281-92823-2
9786611928230 981-277-554-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS; PREFACE; ELECTRON-PHONON INTERACTIONS IN INTERSUBBAND LASER HETEROSTRUCTURES; 1. Introduction; 2. Dielectric Continuum Model for Polar Excitations in Layered Heterostructures; 2.1. LO-phonon confinement in layered heterostructures; 2.2. Examples of scattering rate tailoring; 3. Multiband Description of Electron Confinement; 3.1. Analytical representation for the eigenstates; 3.2. Phenomenological boundary conditions; 3.3. Electron energy spectrum of basic heterostructures; 4. Subband Depopulation in Type-II Laser Heterostructures
4.1. Interband tunneling in InAs/GaSb ""leaky"" heterostructure4.2. Phonon enhancement of the depopulation process; 5. Conclusions; Acknowledgments; References; QUANTUM DOT INFRARED DETECTORS AND SOURCES; 1. Introduction; 2. Historical Background; 3. Self-Organized Quantum Dots for Devices; 4. Electronic Spectra and Carrier Dynamics in Self-Organized Quantum Dots; 5. Quantum Dot Infrared Detectors and Focal Plane Arrays; 6. Quantum Dot Infrared Sources; 7. Future Prospects; Acknowledgments; References; Generation of Terahertz Emission Based on Intersubband Transitions; 1. Introduction 2. Electrically pumped intersubband THz emitters2.1 THz emitters using electron-LO-phonon scattering for depopulation; 2.2. Role of interface and confined phonon modes; 2.3. Intrawell THz emitters using resonant tunneling for depopulation; 2.4 Transport issues of electrically pumped THz intersubband emitters; 3. Optically pumped intersubband THz emitters; 3.1 Intersubband pumped THz optical parametric oscillators (OPOs); 3.2 Intersubband optically pumped THz lasers; 3.3 Interband optically pumped THz emitters; Acknowledgments; References MID-INFRARED GaSb-BASED LASERS WITH TYPE-I HETEROINTERFACES1. Introduction; 2. Progress in the Design of Type-I GaSb-based Diode Lasers; 3. High-power Room-temperature CW Diode Lasers Operating in the Wavelength Range of 2.3 - 2.6-μm; 4. Conclusion; Acknowledgement; References; ADVANCES IN QUANTUM-DOT RESEARCH AND TECHNOLOGY: THE PATH TO APPLICATION IN BIOLOGY; 1. Introduction; 2. Recent Developments in the Application of Quantum Dots to Biology; 3. Recent Developments in GaAs-Based Quantum Dots; 4. Recent Developments in InAs-Based Quantum Dots 5. Recent Developments in GaSb-, GaN-, PbS-, CdTe-, InP-, and PbSe-Based Quantum Dots6. Recent Developments in CdSe-Based Quantum Dots; 7. Implementing Quantum Dot Technology in Biological Applications; Acknowledgments; References; HIGH-FIELD ELECTRON TRANSPORT CONTROLLED BY OPTICAL PHONON EMISSION IN NITRIDES; 1. Introduction; 2. The Basic Equations; 2.1. The Boltzmann equation; 2.2. New variables; 2.3. Boundary conditions; 3. Solutions of the Kinetic Equation; 3.1. General structure of solutions; 3.2. Relationships between f+, f- and F+, F-; 3.3. The zero energy stair s = 0 3.4- The first stair s = 1 |
| Record Nr. | UNINA-9910782282303321 |
| Singapore ; ; River Edge, N.J., : World Scientific, c2003 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
High-speed heterostructure devices : from device concepts to circuit modeling / / Patrick Roblin and Hans Rohdin [[electronic resource]]
| High-speed heterostructure devices : from device concepts to circuit modeling / / Patrick Roblin and Hans Rohdin [[electronic resource]] |
| Autore | Roblin Patrick <1958-> |
| Pubbl/distr/stampa | Cambridge : , : Cambridge University Press, , 2002 |
| Descrizione fisica | 1 online resource (xxxiv, 688 pages) : digital, PDF file(s) |
| Disciplina | 621.3815/2 |
| Soggetto topico |
Semiconductors
Very high speed integrated circuits Heterostructures Transistors Low voltage integrated circuits |
| ISBN |
1-107-12918-4
1-280-41796-X 9786610417964 0-511-17981-2 1-139-14645-9 0-511-06690-2 0-511-06059-9 0-511-33086-3 0-511-75459-0 0-511-06903-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Cover; Half-title; Title; Copyright; Dedication; Contents; Preface; Acknowledgements; List of abbreviations; Introduction; 1 Heterostructure materials; 2 Semiclassical theory of heterostructures; 3 Quantum theory of heterostructures; 4 Quantum heterostructure devices; 5 Scattering processes in heterostructures; 6 Scattering-assisted tunneling; 7 Frequency response of quantum devices from DC to infrared; 8 Charge control of the two-dimensional electron gas; 9 High electric field transport; 10 I-V model of the MODFET; 11 Small-and large-signal AC models for the long-channel MODFET
12 Small-and large-signal AC models for the short-channel MODFET13 DC and microwave electrothermal modeling of FETs; 14 Analytical DC analysis of short-gate MODFETs; 15 Small-signal AC analysis of the short-gate velocity-saturated MODFET; 16 Gate resistance and the Schottky-barrier interface; 17 MODFET high-frequency performance; 18 Modeling high-performance HBTs; 19 Practical high-frequency HBTs; Index |
| Record Nr. | UNINA-9910450659803321 |
Roblin Patrick <1958->
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| Cambridge : , : Cambridge University Press, , 2002 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
High-speed heterostructure devices : from device concepts to circuit modeling / / Patrick Roblin and Hans Rohdin [[electronic resource]]
| High-speed heterostructure devices : from device concepts to circuit modeling / / Patrick Roblin and Hans Rohdin [[electronic resource]] |
| Autore | Roblin Patrick <1958-> |
| Pubbl/distr/stampa | Cambridge : , : Cambridge University Press, , 2002 |
| Descrizione fisica | 1 online resource (xxxiv, 688 pages) : digital, PDF file(s) |
| Disciplina | 621.3815/2 |
| Soggetto topico |
Semiconductors
Very high speed integrated circuits Heterostructures Transistors Low voltage integrated circuits |
| ISBN |
1-107-12918-4
1-280-41796-X 9786610417964 0-511-17981-2 1-139-14645-9 0-511-06690-2 0-511-06059-9 0-511-33086-3 0-511-75459-0 0-511-06903-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Cover; Half-title; Title; Copyright; Dedication; Contents; Preface; Acknowledgements; List of abbreviations; Introduction; 1 Heterostructure materials; 2 Semiclassical theory of heterostructures; 3 Quantum theory of heterostructures; 4 Quantum heterostructure devices; 5 Scattering processes in heterostructures; 6 Scattering-assisted tunneling; 7 Frequency response of quantum devices from DC to infrared; 8 Charge control of the two-dimensional electron gas; 9 High electric field transport; 10 I-V model of the MODFET; 11 Small-and large-signal AC models for the long-channel MODFET
12 Small-and large-signal AC models for the short-channel MODFET13 DC and microwave electrothermal modeling of FETs; 14 Analytical DC analysis of short-gate MODFETs; 15 Small-signal AC analysis of the short-gate velocity-saturated MODFET; 16 Gate resistance and the Schottky-barrier interface; 17 MODFET high-frequency performance; 18 Modeling high-performance HBTs; 19 Practical high-frequency HBTs; Index |
| Record Nr. | UNINA-9910783128703321 |
|
Roblin Patrick <1958->
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| Cambridge : , : Cambridge University Press, , 2002 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Superlattices and other heterostructures : symmetry and optical phenomena / E.L. Ivchenko, G.E. Pikus ; translated by G.P. Skrebtsov
| Superlattices and other heterostructures : symmetry and optical phenomena / E.L. Ivchenko, G.E. Pikus ; translated by G.P. Skrebtsov |
| Autore | Ivchenko, Eougenious L. |
| Edizione | [2nd ed.] |
| Pubbl/distr/stampa | Berlin : Springer-Verlag, 1997 |
| Descrizione fisica | xiii, 382 p. ; 24 cm. |
| Altri autori (Persone) |
Pikus, Grigorii Ezechielevich
Skrebtsov, G.P. |
| Collana | Springer series in solid-state science ; 110 |
| Soggetto topico | Heterostructures |
| ISBN | 3540620303 |
| Classificazione |
53.2.4
537.6'22 QC611.6.06193 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISALENTO-991001280239707536 |
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Ivchenko, Eougenious L.
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| Berlin : Springer-Verlag, 1997 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. del Salento | ||
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Tunable solid-state quantum memory using rare-earth-ion-doped crystal, Nd³⁺:GaN / / by S Rudin [and four others]
| Tunable solid-state quantum memory using rare-earth-ion-doped crystal, Nd³⁺:GaN / / by S Rudin [and four others] |
| Autore | Rudin S. |
| Pubbl/distr/stampa | Adelphi, MD : , : US Army Research Laboratory, , Apr 2017 |
| Descrizione fisica | 1 online resource (vi, 36 pages) : color illustrations |
| Collana | ARL-TR |
| Soggetto topico |
Neodymium
Rare earth ions Heterostructures |
| Soggetto genere / forma | Technical reports. |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Tunable solid-state quantum memory using rare-earth-ion-doped crystal, Nd³⁺ |
| Record Nr. | UNINA-9910711439503321 |
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Rudin S.
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| Adelphi, MD : , : US Army Research Laboratory, , Apr 2017 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Van der Waals heterostructures : fabrications, properties and applications / / edited by Zhuo Kang [and three others]
| Van der Waals heterostructures : fabrications, properties and applications / / edited by Zhuo Kang [and three others] |
| Pubbl/distr/stampa | Weinheim, Germany : , : Wiley-VCH, , [2023] |
| Descrizione fisica | 1 online resource (338 pages) |
| Disciplina | 595.731 |
| Soggetto topico | Heterostructures |
| ISBN |
3-527-83388-9
3-527-83386-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Cover -- Title Page -- Copyright Page -- Contents -- Preface -- Chapter 1 The 2D Semiconductor Library -- 1.1 Introduction -- 1.2 Emerging 2DLMs for Future Electronics -- 1.2.1 Classification -- 1.2.2 Elemental 2DMLs -- 1.2.2.1 IV A Group -- 1.2.2.2 V group A -- 1.2.2.3 III A Group -- 1.2.3 Hexagonal Boron Nitride (h-BN) -- 1.2.4 Transition Metal Dichalcogenides (TMDCs) -- 1.2.5 Transition Metal Carbides (TMCs) -- 1.2.6 Transition Metal Oxides (TMOs) -- References -- Chapter 2 The 2D Semiconductor Synthesis and Performances -- 2.1 Exfoliation -- 2.1.1 Starting from Graphene -- 2.1.2 Semiconducting 2D Materials -- 2.1.3 Big Family of Exfoliated 2D Materials -- 2.1.4 Mechanical Exfoliation of 2D Materials -- 2.1.5 Liquid Exfoliation of 2D Materials -- 2.1.6 Other Exfoliation Method of 2D Materials -- 2.2 Chemical Vapor Deposition -- 2.2.1 Overview of Chemical Vapor Deposition -- 2.2.2 Atmospheric Pressure Chemical Vapor Deposition (APCVD) -- 2.2.2.1 Synthesis of Single-Element Materials (Graphene) -- 2.2.2.2 Synthesis of TMDCs Bielement Materials -- 2.2.3 Low-Pressure Chemical Vapor Deposition (LPCVD) -- 2.2.3.1 Synthesis of Single-Element Materials (Graphene) -- 2.2.3.2 Synthesis of TMDCs Bielement Materials -- 2.2.3.3 Synthesis of Multielement Materials -- 2.2.4 Plasma-Enhanced Chemical Vapor Deposition -- 2.2.4.1 Overview -- 2.2.4.2 Synthesis of Graphene by PECVD -- 2.2.4.3 Synthesis of VG Nanosheets by PECVD -- 2.2.4.4 Synthesis of TMDCs by PECVD -- 2.2.5 MOCVD -- 2.2.5.1 Overview -- 2.2.5.2 Synthesis of III-V Group Semiconductor by MOCVD -- 2.2.5.3 Synthesis of TMDCs by MOCVD -- References -- Chapter 3 The VdW Heterostructure Controllable Fabrications -- 3.1 Wet Transfer -- 3.1.1 Substrate Etching Techniques -- 3.1.2 Electrochemical Delamination Methods -- 3.1.3 Wedging Transfer Method -- 3.2 Controllable Selective Synthesis.
3.2.1 Controllable Synthesis of 2D-2D Heterostructures -- 3.2.1.1 Vertical 2D-2D Heterostructures -- 3.2.1.2 Horizontal 2D-2D Heterostructures -- 3.2.1.3 One-Dimensional Heterostructures -- 3.2.2 Controllable Synthesis of 2D-1D Heterostructures -- 3.2.3 Controllable Synthesis of 2D-3D Heterostructures -- 3.3 Dry Transfer -- 3.3.1 Thermal-release Tape -- 3.3.2 Stamps -- 3.3.3 The Pick-up Methods -- References -- Chapter 4 The Mixed-dimensional VdW Heterostructures -- 4.1 Categorization of Mixed-dimensional VdWHs -- 4.2 Strategies for Constructing Mixed-dimensional VdWHs -- 4.2.1 Transfer-assisted Assembly of Mixed-dimensional VdWHs -- 4.2.2 Direct Growth of Mixed-dimensional VdWHs -- 4.3 Electronic and Sensing Applications -- 4.3.1 Transistors and Spintronics -- 4.3.2 Chemical Sensors -- 4.4 Optoelectronic and Photonic Applications -- 4.4.1 2D-0D Hybridization -- 4.4.2 2D-1D Hybridization -- 4.4.3 2D-3D Hybridization -- 4.5 Energy Applications -- 4.5.1 Application in Photocatalytic Water Splitting -- 4.5.2 Application in Rechargeable Batteries -- 4.5.3 Application in Supercapacitors -- 4.6 Conclusions -- References -- Chapter 5 The VdW Heterostructure Interface Physics -- 5.1 Band Alignment and Charge Transfer in VdWHs -- 5.2 Magnetic Coupling in VdWHs -- 5.2.1 Applications in Valleytronics -- 5.2.2 Applications in Spintronics -- 5.3 Moiré Pattern -- 5.3.1 Band Structure in Moiré Lattice -- 5.3.2 Flat Band-Introduced Superconductivity in Bilayer Graphene -- 5.3.3 Moiré Excitons -- 5.3.4 Moiré Lattice Topology -- 5.4 VdWHs for Protection -- 5.4.1 Introduction of Hexagonal Boron Nitride -- 5.4.2 Graphene Capsulated by h-BN -- 5.4.3 Transition Metal Dichalcogenides Capsulated by h-BN -- 5.4.4 Black Phosphorus Capsulated by h-BN -- 5.5 Characterization Techniques for VdWHs. 5.5.1 Scanning Transmission Electron Microscopy for Characterization of Structural and Related Properties -- 5.5.2 Scanning Probe Microscopy for Characterization of Structural and Electrical Properties -- 5.5.3 Optical and Vibrational Spectroscopy for Characterization of Electron-, Exciton-, and Phonon-Related Properties -- References -- Chapter 6 The VdW Heterostructure Multi-field Coupling Effects -- 6.1 Introduction -- 6.2 The Multifield Coupling Effect Characterization for 2D Van der Waals Structures -- 6.2.1 The Multifield Microscopy Techniques on 2D VdW Structures -- 6.2.1.1 The Electric-Field-Integrated STM-STS Technique -- 6.2.1.2 The Thermal-Field-Integrated STM-STS Technique -- 6.2.1.3 The Multifield-Integrated TEM Technique -- 6.2.1.4 The Optical-Field-Integrated KPFM Technique -- 6.2.2 The Multifield Optical Spectroscopy Techniques on 2D VdW Structures -- 6.2.2.1 The TERS Technique Based on STM and Raman Spectroscopy -- 6.2.2.2 The S-SNOM Based on AFM -- 6.2.3 The Perspective of Multifield Integration Characterization for 2D VdW Structures -- 6.3 The Multifield Modulation for Electrical Properties of 2D Van der Waals Structures -- 6.3.1 Strain-Engineered Electrical Properties of 2D VdW Structures -- 6.3.2 Electric Field-Engineered Electrical Properties of 2D VdW Structures -- 6.3.3 Thermal-Engineered Electrical Properties of VdW Structures -- 6.4 The Multifield Modulation for Optical Properties of 2D Van der Waals Structures -- 6.4.1 Strain-Engineered Optical Properties of 2D VdW Structures -- 6.4.2 Electric-Engineered Optical Properties of 2D VdW Structures -- 6.4.3 Thermal-Engineered Optical Properties of VdW Structures -- References -- Chapter 7 VdW Heterostructure Electronics -- 7.1 Van der Waals PN Junctions -- 7.2 Van der Waals Metal-Semiconductor Junctions -- 7.3 Field-effect Transistor -- 7.3.1 Basic Structure. 7.3.2 Advantage Characteristics -- 7.3.3 2D Dielectric Materials -- 7.4 Junction Field-Effect Transistor -- 7.4.1 Current-Voltage Features -- 7.4.2 Working Principle -- 7.4.3 Device Structure -- 7.4.4 Applications -- 7.5 Tunneling Field-Effect Transistor -- 7.5.1 The History of TFET -- 7.5.2 Mechanism of TFET -- 7.5.3 Application of TFET -- 7.6 Van der Waals Integration -- References -- Chapter 8 VdW Heterostructure Optoelectronics -- 8.1 Photodetectors -- 8.1.1 Photovoltaic Effect -- 8.1.2 Photoconductive Effect -- 8.1.3 Tunneling Effect -- 8.1.4 Photo-Thermoelectric Effect -- 8.1.5 Improvement Strategies -- 8.2 Light Emission -- 8.2.1 Light-Emitting Diodes -- 8.2.2 Lasering -- 8.2.3 Single Photon -- 8.3 Optical Modulators -- 8.3.1 All-Optical Modulators -- 8.3.2 Electro-Optic Modulators -- 8.3.3 Thermo-Optic Modulators -- References -- Chapter 9 VdW Heterostructure Electrochemical Applications -- 9.1 Solar Energy -- 9.2 Van der Waals Heterostructure Application in Hydrogen Energy -- 9.2.1 Producing Hydrogen by Water Photolysis -- 9.2.2 Producing Hydrogen by Water Electrolysis -- 9.3 Battery -- 9.3.1 Lithium-ion Batteries, Sodium-ion Batteries, Potassium-ion Batteries -- 9.3.2 Supercapacitors -- 9.4 Catalyst -- 9.5 Biotechnology -- 9.5.1 Biosensors -- 9.5.2 Tissue Engineering -- References -- Chapter 10 Perspective and Outlook -- 10.1 Overall Development Status of 2D Materials -- 10.1.1 Material Preparation: Scalability, Uniformity, and Reproducibility -- 10.1.2 Metrology -- 10.1.3 Construction of Heterostructure: Industry-Compatible Integration Process -- 10.2 Compatibility Between 2D Van der Waals Device Processing and Silicon Technology -- 10.2.1 Compatibility of 2D Van der Waals Device Integration with Traditional Silicon-Based Process -- 10.2.2 Differences Between 2D van der Waals Devices and Traditional Silicon-Based Processes. 10.2.3 2D van der Waals Device Integration Beyond Silicon Technology -- 10.3 Promising Roadmap of Van der Waals Heterostructure Devices [Medium term: 5 years, Long term: 5-10 years] -- 10.4 Promising Roadmap of Optoelectronic Device -- 10.5 Conclusion and Prospect -- References -- Index -- EULA. |
| Record Nr. | UNINA-9910830208203321 |
| Weinheim, Germany : , : Wiley-VCH, , [2023] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
