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Amorphous silicon/crystalline silicon heterojunction solar cells / / Wolfgang Rainer Fahrner, editor
| Amorphous silicon/crystalline silicon heterojunction solar cells / / Wolfgang Rainer Fahrner, editor |
| Edizione | [1st ed. 2013.] |
| Pubbl/distr/stampa | Heidelberg [Germany] : , : Springer, , 2013 |
| Descrizione fisica | 1 online resource (xi, 111 pages) : illustrations (some color) |
| Disciplina |
621.3815
621.381542 |
| Collana | SpringerBriefs in Applied Sciences and Technology |
| Soggetto topico |
Silicon solar cells
Amorphous substances Heterojunctions |
| ISBN | 3-642-37039-X |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Introduction -- Useful material parameters -- Manufacturing -- Concepts -- Problems and challenges -- Measurement techniques -- Simulation -- Long term stability and degradation -- State of the Art -- Silicon based heterojunction solar cells in China. |
| Record Nr. | UNINA-9910437795503321 |
| Heidelberg [Germany] : , : Springer, , 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Heterojunction bipolar transistors for circuit design : microwave modelling and parameter extraction / / Jianjun Gao
| Heterojunction bipolar transistors for circuit design : microwave modelling and parameter extraction / / Jianjun Gao |
| Autore | Gao Jianjun <1968-> |
| Pubbl/distr/stampa | Singapore : , : John Wiley and Sons, Incorporated, , 2015 |
| Descrizione fisica | 1 online resource (278 p.) |
| Disciplina | 621.3815/28 |
| Soggetto topico |
Bipolar transistors
Heterojunctions Electronic circuit design Microwave measurements |
| ISBN |
1-118-92153-4
1-118-92155-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Title Page; Copyright Page; Contents; About the Author; Preface; Acknowledgments; Nomenclature; Chapter 1 Introduction; 1.1 Overview of Heterojunction Bipolar Transistors; 1.2 Modeling and Measurement for HBT; 1.3 Organization of This Book; References; Chapter 2 Basic Concept of Microwave Device Modeling; 2.1 Signal Parameters; 2.1.1 Low-Frequency Parameters; 2.1.2 S-Parameters; 2.2 Representation of Noisy Two-Port Network; 2.2.1 Noise Matrix; 2.2.2 Noise Parameters; 2.3 Basic Circuit Elements; 2.3.1 Resistance; 2.3.2 Capacitance; 2.3.3 Inductance; 2.3.4 Controlled Sources
2.3.5 Ideal Transmission Line2.4 π- and T-Type Networks; 2.4.1 T-Type Network; 2.4.2 π-Type Network; 2.4.3 Relationship between π- and T-Type Networks; 2.5 Deembedding Method; 2.5.1 Parallel Deembedding; 2.5.2 Series Deembedding; 2.5.3 Cascading Deembedding; 2.6 Basic Methods of Parameter Extraction; 2.6.1 Determination of Capacitance; 2.6.2 Determination of Inductance; 2.6.3 Determination of Resistance; 2.7 Summary; References; Chapter 3 Modeling and Parameter Extraction Methods of Bipolar Junction Transistor; 3.1 PN Junction; 3.2 PN Junction Diode; 3.2.1 Basic Concept 3.2.2 Equivalent Circuit Model3.2.3 Determination of Model Parameters; 3.3 BJT Physical Operation; 3.3.1 Device Structure; 3.3.2 The Modes of Operation; 3.3.3 Base-Width Modulation; 3.3.4 High Injection and Current Crowding; 3.4 Equivalent Circuit Model; 3.4.1 E-M Model; 3.4.2 G-P Model; 3.4.3 Noise Model; 3.5 Microwave Performance; 3.5.1 Transition Frequency; 3.5.2 Common-Emitter Configuration; 3.5.3 Common-Base Configuration; 3.5.4 Common-Collector Configuration; 3.5.5 Summary and Comparisons; 3.6 Summary; References; Chapter 4 Basic Principle of HBT; 4.1 Semiconductor Heterojunction 4.2 HBT Device4.2.1 GaAs HBT; 4.2.2 InP HBT; 4.3 Summary; References; Chapter 5 Small-Signal Modeling and Parameter Extraction of HBT; 5.1 Small-Signal Circuit Model; 5.1.1 Pad Structure; 5.1.2 T-Type Circuit Model; 5.1.3 π-Type Circuit Model; 5.1.4 Unilateral Power Gain; 5.1.5 fT and fmax; 5.2 HBT Device Structure; 5.3 Extraction Method of PAD Capacitances; 5.3.1 Open Test Structure Method; 5.3.2 Pinch-Off Method; 5.4 Extraction Method of Extrinsic Inductances; 5.4.1 Short Test Structure Method; 5.4.2 Open-Collector Method; 5.5 Extraction Method of Extrinsic Resistance 5.5.1 Z Parameter Method5.5.2 Cold-HBT Method; 5.5.3 Open-Collector Method; 5.6 Extraction Method of Intrinsic Resistance; 5.6.1 Direct Extraction Method; 5.6.2 Hybrid Method; 5.7 Semianalysis Method; 5.8 Summary; References; Chapter 6 Large-Signal Equivalent Circuit Modeling of HBT; 6.1 Linear and Nonlinear; 6.1.1 Definition; 6.1.2 Nonlinear Lumped Elements; 6.2 Large Signal and Small Signal; 6.3 Thermal Resistance; 6.3.1 Definition; 6.3.2 Equivalent Circuit Model; 6.3.3 Determination of Thermal Resistance; 6.4 Nonlinear HBT Modeling; 6.4.1 VBIC Model; 6.4.2 Agilent Model 6.4.3 Macromodeling Method |
| Record Nr. | UNINA-9910140452403321 |
Gao Jianjun <1968->
|
||
| Singapore : , : John Wiley and Sons, Incorporated, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Heterojunction bipolar transistors for circuit design : microwave modelling and parameter extraction / / Jianjun Gao
| Heterojunction bipolar transistors for circuit design : microwave modelling and parameter extraction / / Jianjun Gao |
| Autore | Gao Jianjun <1968-> |
| Pubbl/distr/stampa | Singapore : , : John Wiley and Sons, Incorporated, , 2015 |
| Descrizione fisica | 1 online resource (278 p.) |
| Disciplina | 621.3815/28 |
| Soggetto topico |
Bipolar transistors
Heterojunctions Electronic circuit design Microwave measurements |
| ISBN |
1-118-92153-4
1-118-92155-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Title Page; Copyright Page; Contents; About the Author; Preface; Acknowledgments; Nomenclature; Chapter 1 Introduction; 1.1 Overview of Heterojunction Bipolar Transistors; 1.2 Modeling and Measurement for HBT; 1.3 Organization of This Book; References; Chapter 2 Basic Concept of Microwave Device Modeling; 2.1 Signal Parameters; 2.1.1 Low-Frequency Parameters; 2.1.2 S-Parameters; 2.2 Representation of Noisy Two-Port Network; 2.2.1 Noise Matrix; 2.2.2 Noise Parameters; 2.3 Basic Circuit Elements; 2.3.1 Resistance; 2.3.2 Capacitance; 2.3.3 Inductance; 2.3.4 Controlled Sources
2.3.5 Ideal Transmission Line2.4 π- and T-Type Networks; 2.4.1 T-Type Network; 2.4.2 π-Type Network; 2.4.3 Relationship between π- and T-Type Networks; 2.5 Deembedding Method; 2.5.1 Parallel Deembedding; 2.5.2 Series Deembedding; 2.5.3 Cascading Deembedding; 2.6 Basic Methods of Parameter Extraction; 2.6.1 Determination of Capacitance; 2.6.2 Determination of Inductance; 2.6.3 Determination of Resistance; 2.7 Summary; References; Chapter 3 Modeling and Parameter Extraction Methods of Bipolar Junction Transistor; 3.1 PN Junction; 3.2 PN Junction Diode; 3.2.1 Basic Concept 3.2.2 Equivalent Circuit Model3.2.3 Determination of Model Parameters; 3.3 BJT Physical Operation; 3.3.1 Device Structure; 3.3.2 The Modes of Operation; 3.3.3 Base-Width Modulation; 3.3.4 High Injection and Current Crowding; 3.4 Equivalent Circuit Model; 3.4.1 E-M Model; 3.4.2 G-P Model; 3.4.3 Noise Model; 3.5 Microwave Performance; 3.5.1 Transition Frequency; 3.5.2 Common-Emitter Configuration; 3.5.3 Common-Base Configuration; 3.5.4 Common-Collector Configuration; 3.5.5 Summary and Comparisons; 3.6 Summary; References; Chapter 4 Basic Principle of HBT; 4.1 Semiconductor Heterojunction 4.2 HBT Device4.2.1 GaAs HBT; 4.2.2 InP HBT; 4.3 Summary; References; Chapter 5 Small-Signal Modeling and Parameter Extraction of HBT; 5.1 Small-Signal Circuit Model; 5.1.1 Pad Structure; 5.1.2 T-Type Circuit Model; 5.1.3 π-Type Circuit Model; 5.1.4 Unilateral Power Gain; 5.1.5 fT and fmax; 5.2 HBT Device Structure; 5.3 Extraction Method of PAD Capacitances; 5.3.1 Open Test Structure Method; 5.3.2 Pinch-Off Method; 5.4 Extraction Method of Extrinsic Inductances; 5.4.1 Short Test Structure Method; 5.4.2 Open-Collector Method; 5.5 Extraction Method of Extrinsic Resistance 5.5.1 Z Parameter Method5.5.2 Cold-HBT Method; 5.5.3 Open-Collector Method; 5.6 Extraction Method of Intrinsic Resistance; 5.6.1 Direct Extraction Method; 5.6.2 Hybrid Method; 5.7 Semianalysis Method; 5.8 Summary; References; Chapter 6 Large-Signal Equivalent Circuit Modeling of HBT; 6.1 Linear and Nonlinear; 6.1.1 Definition; 6.1.2 Nonlinear Lumped Elements; 6.2 Large Signal and Small Signal; 6.3 Thermal Resistance; 6.3.1 Definition; 6.3.2 Equivalent Circuit Model; 6.3.3 Determination of Thermal Resistance; 6.4 Nonlinear HBT Modeling; 6.4.1 VBIC Model; 6.4.2 Agilent Model 6.4.3 Macromodeling Method |
| Record Nr. | UNINA-9910822337003321 |
|
Gao Jianjun <1968->
|
||
| Singapore : , : John Wiley and Sons, Incorporated, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Heterojunctions and nanostructures / / Vasilios N. Stavrou, editor
| Heterojunctions and nanostructures / / Vasilios N. Stavrou, editor |
| Pubbl/distr/stampa | [Place of publication not identified] : , : IntechOpen, , [2018] |
| Descrizione fisica | 1 online resource (128 pages) : illustrations |
| Disciplina | 621.38152 |
| Soggetto topico |
Heterojunctions
Nanostructures |
| ISBN |
1-83881-525-2
1-78923-469-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910317803103321 |
| [Place of publication not identified] : , : IntechOpen, , [2018] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Impurity profile and energy band diagram for the cuprous sulfide-cadmium sulfide heterojunction / / by Henry W. Brandhorst, Jr
| Impurity profile and energy band diagram for the cuprous sulfide-cadmium sulfide heterojunction / / by Henry W. Brandhorst, Jr |
| Autore | Brandhorst Henry W. |
| Pubbl/distr/stampa | Washington, D.C. : , : National Aeronautics and Space Administration, , March 1969 |
| Descrizione fisica | 1 online resource (ii, 17 pages) : illustrations |
| Collana | NASA technical note |
| Soggetto topico |
Semiconductors - Impurity distribution
Energy bands Electric capacity - Measurement Heterojunctions Cadmium sulfide photoconductive cells Copper sulfide Solar cells - Materials Photovoltaic effect |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910714097403321 |
|
Brandhorst Henry W.
|
||
| Washington, D.C. : , : National Aeronautics and Space Administration, , March 1969 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Introduction to organic semiconductor heterojunctions [[electronic resource] /] / Donghang Yan, Haibo Wang, Baoxun Du
| Introduction to organic semiconductor heterojunctions [[electronic resource] /] / Donghang Yan, Haibo Wang, Baoxun Du |
| Autore | Yan Donghang |
| Pubbl/distr/stampa | Singapore, : Wiley, c2010 |
| Descrizione fisica | 1 online resource (262 p.) |
| Disciplina | 621.3815/2 |
| Altri autori (Persone) |
WangHaibo <1978->
DuBaoxun |
| Soggetto topico |
Heterojunctions
Organic semiconductors |
| ISBN |
1-282-81681-0
9786612816819 0-470-82595-2 0-470-82596-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
INTRODUCTION TO ORGANIC SEMICONDUCTOR HETEROJUNCTIONS; Contents; Foreword; Preface; About the Authors; 1 Organic Heterostructure in Electronic Devices; 1.1 Organic Light-Emitting Diodes; 1.2 Ambipolar Organic Field-Effect Transistors; 1.3 Organic Photovoltaic Cells; 1.4 Parameters in Thin-Film Transistors; References; 2 Weak Epitaxy Growth of Organic Semiconductor Thin Film; 2.1 Fabrication of Organic Ultrathin Film by Vacuum Deposition; 2.1.1 Organic Thin Film of Molecular Beam Epitaxy; 2.1.2 Organic Thin Film of Vapor Deposition; 2.1.3 Oriented Organic Molecular Thin Film
2.1.4 Organic Molecular Thin Film of Vapor Deposition Controlled by Kinetics and Thermodynamics2.2 Vapor-Deposited Thin Film of Rod-Like and Banana-Shaped Organic Molecules; 2.2.1 Vapor-Deposited Thin Film of Pentacene; 2.2.2 Vapor-Deposited Thin Film of α-Hexathiophene; 2.2.3 Vapor-Deposited Thin Film of Banana-Shaped Organic Molecule; 2.2.4 Vapor-Deposited Thin Film of Para-Sexiphenyl; 2.3 Heteroepitaxy of Disk-Like Organic Molecule on Para-Sexiphenyl Ultrathin Film by Vapor Deposition; 2.3.1 p-6P and Planar Metal Phthalocyanines; 2.3.2 p-6P and Nonplanar Metal Phthalocyanine 2.3.3 Heteroepitaxy Growth of Perylene Diimide Derivatives on p-6P2.4 Evolution of Film Growth 2,5-Bis (4-Biphenylyl) Bithiophene (BP2T); 2.4.1 Growth Behavior of BP2T Thin Films; 2.4.2 Heteroepitaxy Growth of ZnPc on BP2T Thin Films; 2.5 Heteroepitaxy Between Disk-Like Molecules; 2.5.1 Stability of H2Pc Film Fabricated by WEG; 2.5.2 WEG of H2Pc Film by Kinetic Control; 2.5.3 Heteroepitaxy Growth of F16CuPc on H2Pc Thin Film; 2.6 Perspectives; 2.6.1 Nucleation Process of Organic Ultrathin Film; 2.6.2 Contacted and Oriented Process of the Nucleus on the Substrate 2.6.3 Liquid-Crystal-Like Behavior and Flexible Boundary of Organic Ultrathin Film2.6.4 Extent of Liquid-Crystal-Like Behavior of Organic Ultrathin Film; 2.6.5 Weak Epitaxy Growth of Organic Ultrathin Film; References; 3 Interfacial Electronic Structure in Organic Semiconductor Heterojunctions; 3.1 Ambipolar Organic Transistors and Organic Heterostructures; 3.2 CuPc/F16CuPc Heterojunction Effect; 3.2.1 Normally On Operation Mode of CuPc/F16CuPc Heterojunction Transistors; 3.2.2 Experiment of Planar Heterojunction Diode; 3.2.3 Carrier Accumulation at CuPc/F16CuPc Heterojunction Interface 3.2.4 CuPc/F16CuPc Heterojunction Diodes with Reverse Rectifying Characteristics3.2.5 Charge Accumulation Thickness in CuPc/F16CuPc Heterojunction Films; 3.2.6 Direct Measurement of CuPc/F16CuPc Interfacial Electronic Structure by UPS; 3.2.7 Difference in UPS Measurement Results; 3.3 Anderson Rule and Ideal Interfacial Electronic Structure of CuPc/F16CuPc Heterojunction; 3.3.1 Anderson Affinity Rule; 3.3.2 Ideal Interfacial Electronic Structure for the CuPc/F16CuPc Heterojunction; 3.4 Organic and Inorganic Semiconductor Heterojunction 3.4.1 Comparison of the Organic Accumulation Heterojunction and Inorganic p-n Homojunction |
| Record Nr. | UNINA-9910139397403321 |
|
Yan Donghang
|
||
| Singapore, : Wiley, c2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Introduction to organic semiconductor heterojunctions [[electronic resource] /] / Donghang Yan, Haibo Wang, Baoxun Du
| Introduction to organic semiconductor heterojunctions [[electronic resource] /] / Donghang Yan, Haibo Wang, Baoxun Du |
| Autore | Yan Donghang |
| Pubbl/distr/stampa | Singapore, : Wiley, c2010 |
| Descrizione fisica | 1 online resource (262 p.) |
| Disciplina | 621.3815/2 |
| Altri autori (Persone) |
WangHaibo <1978->
DuBaoxun |
| Soggetto topico |
Heterojunctions
Organic semiconductors |
| ISBN |
1-282-81681-0
9786612816819 0-470-82595-2 0-470-82596-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
INTRODUCTION TO ORGANIC SEMICONDUCTOR HETEROJUNCTIONS; Contents; Foreword; Preface; About the Authors; 1 Organic Heterostructure in Electronic Devices; 1.1 Organic Light-Emitting Diodes; 1.2 Ambipolar Organic Field-Effect Transistors; 1.3 Organic Photovoltaic Cells; 1.4 Parameters in Thin-Film Transistors; References; 2 Weak Epitaxy Growth of Organic Semiconductor Thin Film; 2.1 Fabrication of Organic Ultrathin Film by Vacuum Deposition; 2.1.1 Organic Thin Film of Molecular Beam Epitaxy; 2.1.2 Organic Thin Film of Vapor Deposition; 2.1.3 Oriented Organic Molecular Thin Film
2.1.4 Organic Molecular Thin Film of Vapor Deposition Controlled by Kinetics and Thermodynamics2.2 Vapor-Deposited Thin Film of Rod-Like and Banana-Shaped Organic Molecules; 2.2.1 Vapor-Deposited Thin Film of Pentacene; 2.2.2 Vapor-Deposited Thin Film of α-Hexathiophene; 2.2.3 Vapor-Deposited Thin Film of Banana-Shaped Organic Molecule; 2.2.4 Vapor-Deposited Thin Film of Para-Sexiphenyl; 2.3 Heteroepitaxy of Disk-Like Organic Molecule on Para-Sexiphenyl Ultrathin Film by Vapor Deposition; 2.3.1 p-6P and Planar Metal Phthalocyanines; 2.3.2 p-6P and Nonplanar Metal Phthalocyanine 2.3.3 Heteroepitaxy Growth of Perylene Diimide Derivatives on p-6P2.4 Evolution of Film Growth 2,5-Bis (4-Biphenylyl) Bithiophene (BP2T); 2.4.1 Growth Behavior of BP2T Thin Films; 2.4.2 Heteroepitaxy Growth of ZnPc on BP2T Thin Films; 2.5 Heteroepitaxy Between Disk-Like Molecules; 2.5.1 Stability of H2Pc Film Fabricated by WEG; 2.5.2 WEG of H2Pc Film by Kinetic Control; 2.5.3 Heteroepitaxy Growth of F16CuPc on H2Pc Thin Film; 2.6 Perspectives; 2.6.1 Nucleation Process of Organic Ultrathin Film; 2.6.2 Contacted and Oriented Process of the Nucleus on the Substrate 2.6.3 Liquid-Crystal-Like Behavior and Flexible Boundary of Organic Ultrathin Film2.6.4 Extent of Liquid-Crystal-Like Behavior of Organic Ultrathin Film; 2.6.5 Weak Epitaxy Growth of Organic Ultrathin Film; References; 3 Interfacial Electronic Structure in Organic Semiconductor Heterojunctions; 3.1 Ambipolar Organic Transistors and Organic Heterostructures; 3.2 CuPc/F16CuPc Heterojunction Effect; 3.2.1 Normally On Operation Mode of CuPc/F16CuPc Heterojunction Transistors; 3.2.2 Experiment of Planar Heterojunction Diode; 3.2.3 Carrier Accumulation at CuPc/F16CuPc Heterojunction Interface 3.2.4 CuPc/F16CuPc Heterojunction Diodes with Reverse Rectifying Characteristics3.2.5 Charge Accumulation Thickness in CuPc/F16CuPc Heterojunction Films; 3.2.6 Direct Measurement of CuPc/F16CuPc Interfacial Electronic Structure by UPS; 3.2.7 Difference in UPS Measurement Results; 3.3 Anderson Rule and Ideal Interfacial Electronic Structure of CuPc/F16CuPc Heterojunction; 3.3.1 Anderson Affinity Rule; 3.3.2 Ideal Interfacial Electronic Structure for the CuPc/F16CuPc Heterojunction; 3.4 Organic and Inorganic Semiconductor Heterojunction 3.4.1 Comparison of the Organic Accumulation Heterojunction and Inorganic p-n Homojunction |
| Record Nr. | UNINA-9910816633203321 |
|
Yan Donghang
|
||
| Singapore, : Wiley, c2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
