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Advances in abrasive technology XVII : selected, peer reviewed papers from the 17th International Symposium on Advances in Abrasive Technology (ISAAT 2014), September 22-25, 2014, Hawaii, USA / / edited by Akinori Yui, Jiwang Yan and Hideki Aoyama
Advances in abrasive technology XVII : selected, peer reviewed papers from the 17th International Symposium on Advances in Abrasive Technology (ISAAT 2014), September 22-25, 2014, Hawaii, USA / / edited by Akinori Yui, Jiwang Yan and Hideki Aoyama
Pubbl/distr/stampa Pfaffikon, Switzerland : , : TTP, , 2014
Descrizione fisica 1 online resource (837 p.)
Disciplina 621.92
Collana Advanced Materials Research
Soggetto topico Abrasives
Grinding and polishing
Soggetto genere / forma Electronic books.
ISBN 3-03826-604-3
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Advances in Abrasive Technology XVII; Preface, Committees and Sponsors; Table of Contents; Chapter 1: Abrasive Machining; On the Profile and Microstructure Variations of Grinding-Induced Hardening Layer in A Cylindrical Workpiece; Study on Grinding Force Distribution on Cup Type Electroplated Diamond Wheel in Face Grinding of Cemented Carbide; Investigations on Belt Grinding of GH4169 Nickel-Based Superalloy; Basic Study on High Efficiency Ultra-Precision Grinding of the Optical Glass Lens; Studies on Grinding Conditions Affecting the Quality of Soft Magnetic Powder Cores
Effect of Coolant Supplied through Grinding Wheel on Residual Stress of Grinding SurfaceMulti-Hole Drilling Method by Abrasive Blasting for CFRP and Composite Materials: Investigation of a Processing Model Based on Abrasive Erosion Phenomenon; A Controllable Material Removal Strategy Considering Force-Geometry Model in Marine Propeller Five-Axis Belt Grinding; Form Accuracy of Internal Grinding of Small and Deep Holes with Coolant Supplied from Inner Side of Grinding Wheel; An Experimental Study on Grinding Fir-Tree Root Forms Using Vitrified CBN Wheels
Deformation and Removal Characteristics of Multilayered Thin Film Structures in Nanoscratching and Diamond LappingInfluence of Work Speed on Surface Quality with Rapid Rotation Mirror-Like Surface Grinding; Estimation of Grinding Cycle Time Taking into Account Specific Grinding Force; Study on the Shape Error in the Cylindrical Traverse Grinding of a Workpiece with High Aspect Ratio; Research on Material Removal Mechanism of Single Grit Cutting Based on FEM Simulation; A Preliminary Study of Surface Integrity and Wheel Wear in the Grinding of Multilayered Thin Film Structures
Experiment Research on ZrO2 Engineering Ceramics with Abrasive Belt GrindingResearch on Grinding of Silicon Particles Reinforced Aluminum Matrix Composites with High Volume Fraction; Investigation of Grinding Characteristics of Cemented Carbides YL10.2 and YF06; Optimization of Grinding Conditions in Non-Axisymmetric Aspherical Grinding; Study on the Grinding Machinability of 9Mn2V under Different Heat Treatment Processes; Study on Force Characteristics of Ultrasonic Vibration-Assisted Sawing Ceramics with Diamond Blade; Chapter 2: Surface Quality
Investigation of Glass Polishing Motion Based on Micro-Oscillating Pressing Force with a Compact Robot and Fine Diamond StoneDevelopment of Non-Destructive Inspection System for Grinding Burn-in-Process Detection of Grinding Burn; Feature Extraction Based 3D Model Registration for Surface Finish Quality Evaluation; Dry Sliding Wear Behaviour of Full Pearlite Obtained by Cladding Low Carbon Steel to Hypoeutectoid Steel; Material Properties of a New PCD Made of Boron Doped Diamond Particles; Dynamic Friction Polishing of Diamond Utilizing High Reactive Metallic Tools
Evaluation and ANN-Based Prediction on Functional Parameters of Surface Roughness in Precision Grinding of Cast Iron
Record Nr. UNINA-9910459979503321
Pfaffikon, Switzerland : , : TTP, , 2014
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Advances in abrasive technology XVII : selected, peer reviewed papers from the 17th International Symposium on Advances in Abrasive Technology (ISAAT 2014), September 22-25, 2014, Hawaii, USA / / edited by Akinori Yui, Jiwang Yan and Hideki Aoyama
Advances in abrasive technology XVII : selected, peer reviewed papers from the 17th International Symposium on Advances in Abrasive Technology (ISAAT 2014), September 22-25, 2014, Hawaii, USA / / edited by Akinori Yui, Jiwang Yan and Hideki Aoyama
Pubbl/distr/stampa Pfaffikon, Switzerland : , : TTP, , 2014
Descrizione fisica 1 online resource (837 p.)
Disciplina 621.92
Collana Advanced Materials Research
Soggetto topico Abrasives
Grinding and polishing
ISBN 3-03826-604-3
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Advances in Abrasive Technology XVII; Preface, Committees and Sponsors; Table of Contents; Chapter 1: Abrasive Machining; On the Profile and Microstructure Variations of Grinding-Induced Hardening Layer in A Cylindrical Workpiece; Study on Grinding Force Distribution on Cup Type Electroplated Diamond Wheel in Face Grinding of Cemented Carbide; Investigations on Belt Grinding of GH4169 Nickel-Based Superalloy; Basic Study on High Efficiency Ultra-Precision Grinding of the Optical Glass Lens; Studies on Grinding Conditions Affecting the Quality of Soft Magnetic Powder Cores
Effect of Coolant Supplied through Grinding Wheel on Residual Stress of Grinding SurfaceMulti-Hole Drilling Method by Abrasive Blasting for CFRP and Composite Materials: Investigation of a Processing Model Based on Abrasive Erosion Phenomenon; A Controllable Material Removal Strategy Considering Force-Geometry Model in Marine Propeller Five-Axis Belt Grinding; Form Accuracy of Internal Grinding of Small and Deep Holes with Coolant Supplied from Inner Side of Grinding Wheel; An Experimental Study on Grinding Fir-Tree Root Forms Using Vitrified CBN Wheels
Deformation and Removal Characteristics of Multilayered Thin Film Structures in Nanoscratching and Diamond LappingInfluence of Work Speed on Surface Quality with Rapid Rotation Mirror-Like Surface Grinding; Estimation of Grinding Cycle Time Taking into Account Specific Grinding Force; Study on the Shape Error in the Cylindrical Traverse Grinding of a Workpiece with High Aspect Ratio; Research on Material Removal Mechanism of Single Grit Cutting Based on FEM Simulation; A Preliminary Study of Surface Integrity and Wheel Wear in the Grinding of Multilayered Thin Film Structures
Experiment Research on ZrO2 Engineering Ceramics with Abrasive Belt GrindingResearch on Grinding of Silicon Particles Reinforced Aluminum Matrix Composites with High Volume Fraction; Investigation of Grinding Characteristics of Cemented Carbides YL10.2 and YF06; Optimization of Grinding Conditions in Non-Axisymmetric Aspherical Grinding; Study on the Grinding Machinability of 9Mn2V under Different Heat Treatment Processes; Study on Force Characteristics of Ultrasonic Vibration-Assisted Sawing Ceramics with Diamond Blade; Chapter 2: Surface Quality
Investigation of Glass Polishing Motion Based on Micro-Oscillating Pressing Force with a Compact Robot and Fine Diamond StoneDevelopment of Non-Destructive Inspection System for Grinding Burn-in-Process Detection of Grinding Burn; Feature Extraction Based 3D Model Registration for Surface Finish Quality Evaluation; Dry Sliding Wear Behaviour of Full Pearlite Obtained by Cladding Low Carbon Steel to Hypoeutectoid Steel; Material Properties of a New PCD Made of Boron Doped Diamond Particles; Dynamic Friction Polishing of Diamond Utilizing High Reactive Metallic Tools
Evaluation and ANN-Based Prediction on Functional Parameters of Surface Roughness in Precision Grinding of Cast Iron
Record Nr. UNINA-9910787026703321
Pfaffikon, Switzerland : , : TTP, , 2014
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Advances in abrasive technology XVII : selected, peer reviewed papers from the 17th International Symposium on Advances in Abrasive Technology (ISAAT 2014), September 22-25, 2014, Hawaii, USA / / edited by Akinori Yui, Jiwang Yan and Hideki Aoyama
Advances in abrasive technology XVII : selected, peer reviewed papers from the 17th International Symposium on Advances in Abrasive Technology (ISAAT 2014), September 22-25, 2014, Hawaii, USA / / edited by Akinori Yui, Jiwang Yan and Hideki Aoyama
Pubbl/distr/stampa Pfaffikon, Switzerland : , : TTP, , 2014
Descrizione fisica 1 online resource (837 p.)
Disciplina 621.92
Collana Advanced Materials Research
Soggetto topico Abrasives
Grinding and polishing
ISBN 3-03826-604-3
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Advances in Abrasive Technology XVII; Preface, Committees and Sponsors; Table of Contents; Chapter 1: Abrasive Machining; On the Profile and Microstructure Variations of Grinding-Induced Hardening Layer in A Cylindrical Workpiece; Study on Grinding Force Distribution on Cup Type Electroplated Diamond Wheel in Face Grinding of Cemented Carbide; Investigations on Belt Grinding of GH4169 Nickel-Based Superalloy; Basic Study on High Efficiency Ultra-Precision Grinding of the Optical Glass Lens; Studies on Grinding Conditions Affecting the Quality of Soft Magnetic Powder Cores
Effect of Coolant Supplied through Grinding Wheel on Residual Stress of Grinding SurfaceMulti-Hole Drilling Method by Abrasive Blasting for CFRP and Composite Materials: Investigation of a Processing Model Based on Abrasive Erosion Phenomenon; A Controllable Material Removal Strategy Considering Force-Geometry Model in Marine Propeller Five-Axis Belt Grinding; Form Accuracy of Internal Grinding of Small and Deep Holes with Coolant Supplied from Inner Side of Grinding Wheel; An Experimental Study on Grinding Fir-Tree Root Forms Using Vitrified CBN Wheels
Deformation and Removal Characteristics of Multilayered Thin Film Structures in Nanoscratching and Diamond LappingInfluence of Work Speed on Surface Quality with Rapid Rotation Mirror-Like Surface Grinding; Estimation of Grinding Cycle Time Taking into Account Specific Grinding Force; Study on the Shape Error in the Cylindrical Traverse Grinding of a Workpiece with High Aspect Ratio; Research on Material Removal Mechanism of Single Grit Cutting Based on FEM Simulation; A Preliminary Study of Surface Integrity and Wheel Wear in the Grinding of Multilayered Thin Film Structures
Experiment Research on ZrO2 Engineering Ceramics with Abrasive Belt GrindingResearch on Grinding of Silicon Particles Reinforced Aluminum Matrix Composites with High Volume Fraction; Investigation of Grinding Characteristics of Cemented Carbides YL10.2 and YF06; Optimization of Grinding Conditions in Non-Axisymmetric Aspherical Grinding; Study on the Grinding Machinability of 9Mn2V under Different Heat Treatment Processes; Study on Force Characteristics of Ultrasonic Vibration-Assisted Sawing Ceramics with Diamond Blade; Chapter 2: Surface Quality
Investigation of Glass Polishing Motion Based on Micro-Oscillating Pressing Force with a Compact Robot and Fine Diamond StoneDevelopment of Non-Destructive Inspection System for Grinding Burn-in-Process Detection of Grinding Burn; Feature Extraction Based 3D Model Registration for Surface Finish Quality Evaluation; Dry Sliding Wear Behaviour of Full Pearlite Obtained by Cladding Low Carbon Steel to Hypoeutectoid Steel; Material Properties of a New PCD Made of Boron Doped Diamond Particles; Dynamic Friction Polishing of Diamond Utilizing High Reactive Metallic Tools
Evaluation and ANN-Based Prediction on Functional Parameters of Surface Roughness in Precision Grinding of Cast Iron
Record Nr. UNINA-9910813236103321
Pfaffikon, Switzerland : , : TTP, , 2014
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Advances in CMP/polishing technologies for the manufacture of electronic devices / / edited by Toshiro Doi, Ioan D. Marinescu, Syuhei Kurokawa
Advances in CMP/polishing technologies for the manufacture of electronic devices / / edited by Toshiro Doi, Ioan D. Marinescu, Syuhei Kurokawa
Edizione [1st ed.]
Pubbl/distr/stampa Oxford, : Elsevier, 2012
Descrizione fisica 1 online resource (330 p.)
Disciplina 671.35
Altri autori (Persone) DoiToshiro K. <1947->
MarinescuIoan D
KurokawaSyuhei
Soggetto topico Grinding and polishing
ISBN 1-283-35498-5
9786613354983
1-4377-7860-7
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Front Cover; CMP/Polishing Technologies for the Manufacture of Electronic Devices; Copyright Page; Contents; Contributors; Preface; About the Authors; 1. Introduction; References; 2. Details of the Fabrication Process for Devices with a Silicon Crystal Substrate; 2.1 History of Semiconductor Devices and their Types; 2.2 Semiconductor Device Process Technology and current Situation; 2.2.1 Element Isolation Structure; 2.2.2 Multilayer Interconnections; References; 3. The Current Situation in Ultra-Precision Technology - Silicon Single Crystals as an Example
3.1 Production of Single Crystal Silicon3.2 Slicing: Pre- and Post-Process; 3.2.1 Slicing; 3.2.1.1 Introduction; 3.2.1.2 Abrasive Wire; Loose-Abrasive Wire; Comparison Between Wire Saw and ID Saw; Fundamentals of Free Abrasive Machining; Fixed-Abrasive Wire; Saw Damage on the Surface of Silicon Wafer; 3.2.1.3 Electrical Discharge Machining (EDM); 3.2.1.4 Wire Electrolytic-Spark Hybrid Machining; 3.2.2 Beveling; 3.3 Lapping of Silicon; 3.3.1 Introduction; 3.3.1.1 Brief History; 3.3.2 Lapping Mechanism; 3.3.3 Mathematical Model; 3.3.3.1 Ductile and Brittle Regime
3.3.3.2 Calculation of Material Removal Rate3.3.4 Kinematics; 3.3.4.1 Sliding Velocity; 3.3.4.2 Equation for Streaks on a Work Piece; 3.3.4.3 Equations for Streaks on a Lap; 3.3.4.4 Effects of Different Parameters on Material Removal Rate; Effect of Lapping Pressure on the MRR; Effect of Abrasive Size on the MRR; 3.3.5 Types of Lapping (Focus: Double-Sided Lapping); 3.3.5.1 Double-Sided Lapping; 3.3.5.2 Mechanism; 3.3.5.3 Machine Set-up; 3.3.5.4 Process Cycle; 3.3.5.5 Advantages of Double-Sided Lapping; 3.3.5.6 Parameters of Double-Sided Lapping; 3.3.5.7 Lapping with Bonded Abrasives
3.3.5.8 Process Capabilities for Lapping3.3.6 Abrasives and Lubricants; 3.3.6.1 Types of Abrasives; (1) Diamond; (2) Cubic Boron Nitride (CBN); (3) Norbide Abrasive; (4) Silicon Carbide; (5) Aluminum Oxide; (6) Fused Aluminas; (7) Corundum; (8) Garnet; (9) Unfused Alumina (hydrated-calcined); (10) Micro-Graded Flours; (11) Linde Powders; (12) Other Abrasive Materials; 3.3.7 Equipment; 3.3.7.1 Lapping Plate; 3.3.7.2 Charging of the Lapping Plate; 3.3.7.3 Different Types of Lapping Plate; 3.3.7.4 Carriers Used in Double-Sided Lapping; 3.3.7.5 Ultrasonic Cleaner; 3.3.8 Abrasive Slurry
3.3.8.1 Abrasives3.3.9 Introduction to Silicon; 3.3.10 Lapping of Silicon Wafers - Experiments; 3.3.10.1 Mounting the Wafer; 3.3.10.2 Double-Sided Lapping Kinematics; 3.3.10.3 Lapping Process; 3.3.10.4 Effects of Lapping Wheels; 3.3.10.5 Slurry and Its Effects; 3.3.10.6 Silicon Machining; 3.3.10.7 Common Lapping Wheel Problems and Solutions; 3.3.11 Lapping Machine; 3.3.12 Experimental Set-up; 3.3.13 Experimental Results; Plots; Equations Used to Calculate the Material Removal Rate; Observations; 3.3.14 Conclusions; 3.4 Etching; 3.4.1 Acid Etching of Silicon; 3.4.2 Alkaline Etching of Silicon
3.5 Ultra-Precision Polishing/CMP of Silicon Wafers
Record Nr. UNINA-9911004748103321
Oxford, : Elsevier, 2012
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Chemical mechanical planarization of microelectronic materials [[electronic resource] /] / Joseph M. Steigerwald, Shyam P. Murarka, Ronald J. Gutmann
Chemical mechanical planarization of microelectronic materials [[electronic resource] /] / Joseph M. Steigerwald, Shyam P. Murarka, Ronald J. Gutmann
Autore Steigerwald Joseph M
Pubbl/distr/stampa Weinheim, : Wiley-VCH, 2004
Descrizione fisica 1 online resource (339 p.)
Disciplina 621.3815
621.38152
Altri autori (Persone) MurarkaS. P
GutmannRonald J
Soggetto topico Microelectronics - Materials
Grinding and polishing
ISBN 1-281-84314-8
9786611843144
3-527-61774-4
3-527-61775-2
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Chemical Mechanical Planarization of Microelectronic Materials; CONTENTS; Preface; 1 Chemical Mechanical Planarization - An Introduction; 1.1 Introduction; 1.2 Applications; 1.3 The CMP Process; 1.4 CMP Tools; 1.5 Process Integration; 1.6 Conclusion and Book Outline; References; 2 Historical Motivations for CMP; 2.1 Advanced Metallization Schemes; 2.1.1 Interconnect Delay Impact on Performance; 2.1.2 Methods of Reducing Interconnect Delay; 2.1.3 Planarity Requirements for Multilevel Metallization; 2.2 Planarization Schemes; 2.2.1 Smoothing and Local Planarization; 2.2.2 Global Planarization
2.3 CMP Planarization2.3.1 Advantages of CMP; 2.3.2 Disadvantages of CMP; 2.3.3 The Challenge of CMP; References; 3 CMP Variables and Manipulations; 3.1 Output Variables; 3.2 Input Variables; References; 4 Mechanical and Electrochemical Concepts for CMP; 4.1 Preston Equation; 4.2 Fluid Layer Interactions; 4.3 Boundary Layer Interactions; 4.3.1 Fluid Boundary Layer; 4.3.2 Double Layer; 4.3.3 Metal Surface Films; 4.3.4 Mechanical Abrasion; 4.4 Abrasion Modes; 4.4.1 Polishing vs. Grinding; 4.4.2 Hertzian Indentation vs. Fluid-Based Wear; 4.5 The Polishing Pad; 4.5.1 Pad Materials and Properties
4.5.2 Pad Conditioning4.6 Electrochemical Phenomena; 4.6.1 Reduction-Oxidation Reactions; 4.6.2 Pourbaix Diagrams; 4.6.3 Mixed Potential Theory; 4.6.4 Example: Copper CMP in NH3-Based Slurries; 4.6.5 Example: Copper-Titanium Interaction; 4.7 Role of Chemistry in CMP; 4.8 Abrasives; References; 5 Oxide CMP Processes - Mechanisms and Models; 5.1 The Role of Chemistry in Oxide Polishing; 5.1.1 Glass Polishing Mechanisms; 5.1.2 The Role of Water in Oxide Polishing; 5.1.3 Chemical Interactions Between Abrasive and Oxide Surface; 5.2 Oxide CMP in Practice; 5.2.1 Polish Rate Results
5.2.2 Planarization Results5.2.3 CMP in Manufacturing; 5.2.4 Yield Issues; 5.3 Summary; References; 6 Tungsten and CMP Processes; 6.1 Inlaid Metal Patterning; 6.1.1 RIE Etch Back; 6.1.2 Metal CMP; 6.2 Tungsten CMP; 6.2.1 Surface Passivation Model for Tungsten CMP; 6.2.2 Tungsten CMP Processes; 6.3 Summary; References; 7 Copper CMP; 7.1 Proposed Model for Copper CMP; 7.2 Surface Layer Formation - Planarization; 7.2.1 Formation of Native Surface Films; 7.2.2 Formation of Nonnative Cu-BTA Surface Film; 7.3 Material Dissolution; 7.3.1 Removal of Abraded Material
7.3.2 Increasing Solubility with Complexing Agent7.3.3 Increasing Dissolution Rate with Oxidizing Agents; 7.3.4 Chemical Aspect of the Copper CMP Model; 7.4 Preston Equation; 7.4.1 Preston Coefficient; 7.4.2 Polish Rates; 7.4.3 Comparison of Kp Values; 7.5 Polish-Induced Stress; 7.6 Pattern Geometry Effects; 7.6.1 Dishing and Erosion in Cu/SiO2 System; 7.6.2 Optimization of Process to Minimize Dishing and Erosion; 7.6.3 Summary; References; 8 CMP of Other Materials and New CMP Applications; 8.1 The Front-End Applications in Silicon IC Fabrication
8.1.1 Polysilicon CMP for Deep Trench Capacitor Fabrication
Record Nr. UNINA-9910144581703321
Steigerwald Joseph M  
Weinheim, : Wiley-VCH, 2004
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Chemical mechanical planarization of microelectronic materials [[electronic resource] /] / Joseph M. Steigerwald, Shyam P. Murarka, Ronald J. Gutmann
Chemical mechanical planarization of microelectronic materials [[electronic resource] /] / Joseph M. Steigerwald, Shyam P. Murarka, Ronald J. Gutmann
Autore Steigerwald Joseph M
Pubbl/distr/stampa Weinheim, : Wiley-VCH, 2004
Descrizione fisica 1 online resource (339 p.)
Disciplina 621.3815
621.38152
Altri autori (Persone) MurarkaS. P
GutmannRonald J
Soggetto topico Microelectronics - Materials
Grinding and polishing
ISBN 1-281-84314-8
9786611843144
3-527-61774-4
3-527-61775-2
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Chemical Mechanical Planarization of Microelectronic Materials; CONTENTS; Preface; 1 Chemical Mechanical Planarization - An Introduction; 1.1 Introduction; 1.2 Applications; 1.3 The CMP Process; 1.4 CMP Tools; 1.5 Process Integration; 1.6 Conclusion and Book Outline; References; 2 Historical Motivations for CMP; 2.1 Advanced Metallization Schemes; 2.1.1 Interconnect Delay Impact on Performance; 2.1.2 Methods of Reducing Interconnect Delay; 2.1.3 Planarity Requirements for Multilevel Metallization; 2.2 Planarization Schemes; 2.2.1 Smoothing and Local Planarization; 2.2.2 Global Planarization
2.3 CMP Planarization2.3.1 Advantages of CMP; 2.3.2 Disadvantages of CMP; 2.3.3 The Challenge of CMP; References; 3 CMP Variables and Manipulations; 3.1 Output Variables; 3.2 Input Variables; References; 4 Mechanical and Electrochemical Concepts for CMP; 4.1 Preston Equation; 4.2 Fluid Layer Interactions; 4.3 Boundary Layer Interactions; 4.3.1 Fluid Boundary Layer; 4.3.2 Double Layer; 4.3.3 Metal Surface Films; 4.3.4 Mechanical Abrasion; 4.4 Abrasion Modes; 4.4.1 Polishing vs. Grinding; 4.4.2 Hertzian Indentation vs. Fluid-Based Wear; 4.5 The Polishing Pad; 4.5.1 Pad Materials and Properties
4.5.2 Pad Conditioning4.6 Electrochemical Phenomena; 4.6.1 Reduction-Oxidation Reactions; 4.6.2 Pourbaix Diagrams; 4.6.3 Mixed Potential Theory; 4.6.4 Example: Copper CMP in NH3-Based Slurries; 4.6.5 Example: Copper-Titanium Interaction; 4.7 Role of Chemistry in CMP; 4.8 Abrasives; References; 5 Oxide CMP Processes - Mechanisms and Models; 5.1 The Role of Chemistry in Oxide Polishing; 5.1.1 Glass Polishing Mechanisms; 5.1.2 The Role of Water in Oxide Polishing; 5.1.3 Chemical Interactions Between Abrasive and Oxide Surface; 5.2 Oxide CMP in Practice; 5.2.1 Polish Rate Results
5.2.2 Planarization Results5.2.3 CMP in Manufacturing; 5.2.4 Yield Issues; 5.3 Summary; References; 6 Tungsten and CMP Processes; 6.1 Inlaid Metal Patterning; 6.1.1 RIE Etch Back; 6.1.2 Metal CMP; 6.2 Tungsten CMP; 6.2.1 Surface Passivation Model for Tungsten CMP; 6.2.2 Tungsten CMP Processes; 6.3 Summary; References; 7 Copper CMP; 7.1 Proposed Model for Copper CMP; 7.2 Surface Layer Formation - Planarization; 7.2.1 Formation of Native Surface Films; 7.2.2 Formation of Nonnative Cu-BTA Surface Film; 7.3 Material Dissolution; 7.3.1 Removal of Abraded Material
7.3.2 Increasing Solubility with Complexing Agent7.3.3 Increasing Dissolution Rate with Oxidizing Agents; 7.3.4 Chemical Aspect of the Copper CMP Model; 7.4 Preston Equation; 7.4.1 Preston Coefficient; 7.4.2 Polish Rates; 7.4.3 Comparison of Kp Values; 7.5 Polish-Induced Stress; 7.6 Pattern Geometry Effects; 7.6.1 Dishing and Erosion in Cu/SiO2 System; 7.6.2 Optimization of Process to Minimize Dishing and Erosion; 7.6.3 Summary; References; 8 CMP of Other Materials and New CMP Applications; 8.1 The Front-End Applications in Silicon IC Fabrication
8.1.1 Polysilicon CMP for Deep Trench Capacitor Fabrication
Record Nr. UNINA-9910830394203321
Steigerwald Joseph M  
Weinheim, : Wiley-VCH, 2004
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Chemical mechanical planarization of microelectronic materials / / Joseph M. Steigerwald, Shyam P. Murarka, Ronald J. Gutmann
Chemical mechanical planarization of microelectronic materials / / Joseph M. Steigerwald, Shyam P. Murarka, Ronald J. Gutmann
Autore Steigerwald Joseph M
Pubbl/distr/stampa Weinheim, : Wiley-VCH, 2004
Descrizione fisica 1 online resource (339 p.)
Disciplina 621.3815
621.38152
Altri autori (Persone) MurarkaS. P
GutmannRonald J
Soggetto topico Microelectronics - Materials
Grinding and polishing
ISBN 9786611843144
9781281843142
1281843148
9783527617746
3527617744
9783527617753
3527617752
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Chemical Mechanical Planarization of Microelectronic Materials; CONTENTS; Preface; 1 Chemical Mechanical Planarization - An Introduction; 1.1 Introduction; 1.2 Applications; 1.3 The CMP Process; 1.4 CMP Tools; 1.5 Process Integration; 1.6 Conclusion and Book Outline; References; 2 Historical Motivations for CMP; 2.1 Advanced Metallization Schemes; 2.1.1 Interconnect Delay Impact on Performance; 2.1.2 Methods of Reducing Interconnect Delay; 2.1.3 Planarity Requirements for Multilevel Metallization; 2.2 Planarization Schemes; 2.2.1 Smoothing and Local Planarization; 2.2.2 Global Planarization
2.3 CMP Planarization2.3.1 Advantages of CMP; 2.3.2 Disadvantages of CMP; 2.3.3 The Challenge of CMP; References; 3 CMP Variables and Manipulations; 3.1 Output Variables; 3.2 Input Variables; References; 4 Mechanical and Electrochemical Concepts for CMP; 4.1 Preston Equation; 4.2 Fluid Layer Interactions; 4.3 Boundary Layer Interactions; 4.3.1 Fluid Boundary Layer; 4.3.2 Double Layer; 4.3.3 Metal Surface Films; 4.3.4 Mechanical Abrasion; 4.4 Abrasion Modes; 4.4.1 Polishing vs. Grinding; 4.4.2 Hertzian Indentation vs. Fluid-Based Wear; 4.5 The Polishing Pad; 4.5.1 Pad Materials and Properties
4.5.2 Pad Conditioning4.6 Electrochemical Phenomena; 4.6.1 Reduction-Oxidation Reactions; 4.6.2 Pourbaix Diagrams; 4.6.3 Mixed Potential Theory; 4.6.4 Example: Copper CMP in NH3-Based Slurries; 4.6.5 Example: Copper-Titanium Interaction; 4.7 Role of Chemistry in CMP; 4.8 Abrasives; References; 5 Oxide CMP Processes - Mechanisms and Models; 5.1 The Role of Chemistry in Oxide Polishing; 5.1.1 Glass Polishing Mechanisms; 5.1.2 The Role of Water in Oxide Polishing; 5.1.3 Chemical Interactions Between Abrasive and Oxide Surface; 5.2 Oxide CMP in Practice; 5.2.1 Polish Rate Results
5.2.2 Planarization Results5.2.3 CMP in Manufacturing; 5.2.4 Yield Issues; 5.3 Summary; References; 6 Tungsten and CMP Processes; 6.1 Inlaid Metal Patterning; 6.1.1 RIE Etch Back; 6.1.2 Metal CMP; 6.2 Tungsten CMP; 6.2.1 Surface Passivation Model for Tungsten CMP; 6.2.2 Tungsten CMP Processes; 6.3 Summary; References; 7 Copper CMP; 7.1 Proposed Model for Copper CMP; 7.2 Surface Layer Formation - Planarization; 7.2.1 Formation of Native Surface Films; 7.2.2 Formation of Nonnative Cu-BTA Surface Film; 7.3 Material Dissolution; 7.3.1 Removal of Abraded Material
7.3.2 Increasing Solubility with Complexing Agent7.3.3 Increasing Dissolution Rate with Oxidizing Agents; 7.3.4 Chemical Aspect of the Copper CMP Model; 7.4 Preston Equation; 7.4.1 Preston Coefficient; 7.4.2 Polish Rates; 7.4.3 Comparison of Kp Values; 7.5 Polish-Induced Stress; 7.6 Pattern Geometry Effects; 7.6.1 Dishing and Erosion in Cu/SiO2 System; 7.6.2 Optimization of Process to Minimize Dishing and Erosion; 7.6.3 Summary; References; 8 CMP of Other Materials and New CMP Applications; 8.1 The Front-End Applications in Silicon IC Fabrication
8.1.1 Polysilicon CMP for Deep Trench Capacitor Fabrication
Record Nr. UNINA-9911019406703321
Steigerwald Joseph M  
Weinheim, : Wiley-VCH, 2004
Materiale a stampa
Lo trovi qui: Univ. Federico II
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CMP Technology : International Conference on Planarization : 25-27 October 2007
CMP Technology : International Conference on Planarization : 25-27 October 2007
Pubbl/distr/stampa Frankfurt am Main, Germany : , : VDE, , 2011
Descrizione fisica 1 online resource (493 pages)
Disciplina 621.92
Soggetto topico Grinding and polishing
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNISA-996215978403316
Frankfurt am Main, Germany : , : VDE, , 2011
Materiale a stampa
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Flexure strength and optical transparency of magnesium-aluminate spinel (MgAlO₄) : influence of polishing and glass coating / / by Steve M Kilczewski [and four others]
Flexure strength and optical transparency of magnesium-aluminate spinel (MgAlO₄) : influence of polishing and glass coating / / by Steve M Kilczewski [and four others]
Autore Kilczewski Steve M.
Pubbl/distr/stampa Aberdeen Proving Ground, MD : , : US Army Research Laboratory, , December 2016
Descrizione fisica 1 online resource (vi, 11 pages) : illustrations (some color)
Soggetto topico Aluminum-magnesium alloys - United States
Aluminates
Spinel - United States
Transparent solids
Grinding and polishing
Strength of materials
Soggetto genere / forma Technical reports.
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti Flexure strength and optical transparency of magnesium-aluminate spinel
Record Nr. UNINA-9910706199903321
Kilczewski Steve M.  
Aberdeen Proving Ground, MD : , : US Army Research Laboratory, , December 2016
Materiale a stampa
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Grinding technology [[electronic resource] ] : theory and application of machining with abrasives, second edition / / Steven Malkin, Changsheng Guo
Grinding technology [[electronic resource] ] : theory and application of machining with abrasives, second edition / / Steven Malkin, Changsheng Guo
Autore Malkin S (Stephen), <1941->
Edizione [2nd ed.]
Pubbl/distr/stampa New York, : Industrial Press, c2008
Disciplina 671.3/5
Soggetto topico Grinding and polishing
Mechanical Engineering - General
Mechanical Engineering
Engineering & Applied Sciences
Soggetto genere / forma Electronic books.
ISBN 1-61344-846-5
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti Grinding Technology - Theory and Applications of Machining with Abrasives
Record Nr. UNINA-9911006794903321
Malkin S (Stephen), <1941->  
New York, : Industrial Press, c2008
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