Advances in abrasive technology XVII : selected, peer reviewed papers from the 17th International Symposium on Advances in Abrasive Technology (ISAAT 2014), September 22-25, 2014, Hawaii, USA / / edited by Akinori Yui, Jiwang Yan and Hideki Aoyama
| Advances in abrasive technology XVII : selected, peer reviewed papers from the 17th International Symposium on Advances in Abrasive Technology (ISAAT 2014), September 22-25, 2014, Hawaii, USA / / edited by Akinori Yui, Jiwang Yan and Hideki Aoyama |
| Pubbl/distr/stampa | Pfaffikon, Switzerland : , : TTP, , 2014 |
| Descrizione fisica | 1 online resource (837 p.) |
| Disciplina | 621.92 |
| Collana | Advanced Materials Research |
| Soggetto topico |
Abrasives
Grinding and polishing |
| Soggetto genere / forma | Electronic books. |
| ISBN | 3-03826-604-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Advances in Abrasive Technology XVII; Preface, Committees and Sponsors; Table of Contents; Chapter 1: Abrasive Machining; On the Profile and Microstructure Variations of Grinding-Induced Hardening Layer in A Cylindrical Workpiece; Study on Grinding Force Distribution on Cup Type Electroplated Diamond Wheel in Face Grinding of Cemented Carbide; Investigations on Belt Grinding of GH4169 Nickel-Based Superalloy; Basic Study on High Efficiency Ultra-Precision Grinding of the Optical Glass Lens; Studies on Grinding Conditions Affecting the Quality of Soft Magnetic Powder Cores
Effect of Coolant Supplied through Grinding Wheel on Residual Stress of Grinding SurfaceMulti-Hole Drilling Method by Abrasive Blasting for CFRP and Composite Materials: Investigation of a Processing Model Based on Abrasive Erosion Phenomenon; A Controllable Material Removal Strategy Considering Force-Geometry Model in Marine Propeller Five-Axis Belt Grinding; Form Accuracy of Internal Grinding of Small and Deep Holes with Coolant Supplied from Inner Side of Grinding Wheel; An Experimental Study on Grinding Fir-Tree Root Forms Using Vitrified CBN Wheels Deformation and Removal Characteristics of Multilayered Thin Film Structures in Nanoscratching and Diamond LappingInfluence of Work Speed on Surface Quality with Rapid Rotation Mirror-Like Surface Grinding; Estimation of Grinding Cycle Time Taking into Account Specific Grinding Force; Study on the Shape Error in the Cylindrical Traverse Grinding of a Workpiece with High Aspect Ratio; Research on Material Removal Mechanism of Single Grit Cutting Based on FEM Simulation; A Preliminary Study of Surface Integrity and Wheel Wear in the Grinding of Multilayered Thin Film Structures Experiment Research on ZrO2 Engineering Ceramics with Abrasive Belt GrindingResearch on Grinding of Silicon Particles Reinforced Aluminum Matrix Composites with High Volume Fraction; Investigation of Grinding Characteristics of Cemented Carbides YL10.2 and YF06; Optimization of Grinding Conditions in Non-Axisymmetric Aspherical Grinding; Study on the Grinding Machinability of 9Mn2V under Different Heat Treatment Processes; Study on Force Characteristics of Ultrasonic Vibration-Assisted Sawing Ceramics with Diamond Blade; Chapter 2: Surface Quality Investigation of Glass Polishing Motion Based on Micro-Oscillating Pressing Force with a Compact Robot and Fine Diamond StoneDevelopment of Non-Destructive Inspection System for Grinding Burn-in-Process Detection of Grinding Burn; Feature Extraction Based 3D Model Registration for Surface Finish Quality Evaluation; Dry Sliding Wear Behaviour of Full Pearlite Obtained by Cladding Low Carbon Steel to Hypoeutectoid Steel; Material Properties of a New PCD Made of Boron Doped Diamond Particles; Dynamic Friction Polishing of Diamond Utilizing High Reactive Metallic Tools Evaluation and ANN-Based Prediction on Functional Parameters of Surface Roughness in Precision Grinding of Cast Iron |
| Record Nr. | UNINA-9910459979503321 |
| Pfaffikon, Switzerland : , : TTP, , 2014 | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advances in abrasive technology XVII : selected, peer reviewed papers from the 17th International Symposium on Advances in Abrasive Technology (ISAAT 2014), September 22-25, 2014, Hawaii, USA / / edited by Akinori Yui, Jiwang Yan and Hideki Aoyama
| Advances in abrasive technology XVII : selected, peer reviewed papers from the 17th International Symposium on Advances in Abrasive Technology (ISAAT 2014), September 22-25, 2014, Hawaii, USA / / edited by Akinori Yui, Jiwang Yan and Hideki Aoyama |
| Pubbl/distr/stampa | Pfaffikon, Switzerland : , : TTP, , 2014 |
| Descrizione fisica | 1 online resource (837 p.) |
| Disciplina | 621.92 |
| Collana | Advanced Materials Research |
| Soggetto topico |
Abrasives
Grinding and polishing |
| ISBN | 3-03826-604-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Advances in Abrasive Technology XVII; Preface, Committees and Sponsors; Table of Contents; Chapter 1: Abrasive Machining; On the Profile and Microstructure Variations of Grinding-Induced Hardening Layer in A Cylindrical Workpiece; Study on Grinding Force Distribution on Cup Type Electroplated Diamond Wheel in Face Grinding of Cemented Carbide; Investigations on Belt Grinding of GH4169 Nickel-Based Superalloy; Basic Study on High Efficiency Ultra-Precision Grinding of the Optical Glass Lens; Studies on Grinding Conditions Affecting the Quality of Soft Magnetic Powder Cores
Effect of Coolant Supplied through Grinding Wheel on Residual Stress of Grinding SurfaceMulti-Hole Drilling Method by Abrasive Blasting for CFRP and Composite Materials: Investigation of a Processing Model Based on Abrasive Erosion Phenomenon; A Controllable Material Removal Strategy Considering Force-Geometry Model in Marine Propeller Five-Axis Belt Grinding; Form Accuracy of Internal Grinding of Small and Deep Holes with Coolant Supplied from Inner Side of Grinding Wheel; An Experimental Study on Grinding Fir-Tree Root Forms Using Vitrified CBN Wheels Deformation and Removal Characteristics of Multilayered Thin Film Structures in Nanoscratching and Diamond LappingInfluence of Work Speed on Surface Quality with Rapid Rotation Mirror-Like Surface Grinding; Estimation of Grinding Cycle Time Taking into Account Specific Grinding Force; Study on the Shape Error in the Cylindrical Traverse Grinding of a Workpiece with High Aspect Ratio; Research on Material Removal Mechanism of Single Grit Cutting Based on FEM Simulation; A Preliminary Study of Surface Integrity and Wheel Wear in the Grinding of Multilayered Thin Film Structures Experiment Research on ZrO2 Engineering Ceramics with Abrasive Belt GrindingResearch on Grinding of Silicon Particles Reinforced Aluminum Matrix Composites with High Volume Fraction; Investigation of Grinding Characteristics of Cemented Carbides YL10.2 and YF06; Optimization of Grinding Conditions in Non-Axisymmetric Aspherical Grinding; Study on the Grinding Machinability of 9Mn2V under Different Heat Treatment Processes; Study on Force Characteristics of Ultrasonic Vibration-Assisted Sawing Ceramics with Diamond Blade; Chapter 2: Surface Quality Investigation of Glass Polishing Motion Based on Micro-Oscillating Pressing Force with a Compact Robot and Fine Diamond StoneDevelopment of Non-Destructive Inspection System for Grinding Burn-in-Process Detection of Grinding Burn; Feature Extraction Based 3D Model Registration for Surface Finish Quality Evaluation; Dry Sliding Wear Behaviour of Full Pearlite Obtained by Cladding Low Carbon Steel to Hypoeutectoid Steel; Material Properties of a New PCD Made of Boron Doped Diamond Particles; Dynamic Friction Polishing of Diamond Utilizing High Reactive Metallic Tools Evaluation and ANN-Based Prediction on Functional Parameters of Surface Roughness in Precision Grinding of Cast Iron |
| Record Nr. | UNINA-9910787026703321 |
| Pfaffikon, Switzerland : , : TTP, , 2014 | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advances in abrasive technology XVII : selected, peer reviewed papers from the 17th International Symposium on Advances in Abrasive Technology (ISAAT 2014), September 22-25, 2014, Hawaii, USA / / edited by Akinori Yui, Jiwang Yan and Hideki Aoyama
| Advances in abrasive technology XVII : selected, peer reviewed papers from the 17th International Symposium on Advances in Abrasive Technology (ISAAT 2014), September 22-25, 2014, Hawaii, USA / / edited by Akinori Yui, Jiwang Yan and Hideki Aoyama |
| Pubbl/distr/stampa | Pfaffikon, Switzerland : , : TTP, , 2014 |
| Descrizione fisica | 1 online resource (837 p.) |
| Disciplina | 621.92 |
| Collana | Advanced Materials Research |
| Soggetto topico |
Abrasives
Grinding and polishing |
| ISBN | 3-03826-604-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Advances in Abrasive Technology XVII; Preface, Committees and Sponsors; Table of Contents; Chapter 1: Abrasive Machining; On the Profile and Microstructure Variations of Grinding-Induced Hardening Layer in A Cylindrical Workpiece; Study on Grinding Force Distribution on Cup Type Electroplated Diamond Wheel in Face Grinding of Cemented Carbide; Investigations on Belt Grinding of GH4169 Nickel-Based Superalloy; Basic Study on High Efficiency Ultra-Precision Grinding of the Optical Glass Lens; Studies on Grinding Conditions Affecting the Quality of Soft Magnetic Powder Cores
Effect of Coolant Supplied through Grinding Wheel on Residual Stress of Grinding SurfaceMulti-Hole Drilling Method by Abrasive Blasting for CFRP and Composite Materials: Investigation of a Processing Model Based on Abrasive Erosion Phenomenon; A Controllable Material Removal Strategy Considering Force-Geometry Model in Marine Propeller Five-Axis Belt Grinding; Form Accuracy of Internal Grinding of Small and Deep Holes with Coolant Supplied from Inner Side of Grinding Wheel; An Experimental Study on Grinding Fir-Tree Root Forms Using Vitrified CBN Wheels Deformation and Removal Characteristics of Multilayered Thin Film Structures in Nanoscratching and Diamond LappingInfluence of Work Speed on Surface Quality with Rapid Rotation Mirror-Like Surface Grinding; Estimation of Grinding Cycle Time Taking into Account Specific Grinding Force; Study on the Shape Error in the Cylindrical Traverse Grinding of a Workpiece with High Aspect Ratio; Research on Material Removal Mechanism of Single Grit Cutting Based on FEM Simulation; A Preliminary Study of Surface Integrity and Wheel Wear in the Grinding of Multilayered Thin Film Structures Experiment Research on ZrO2 Engineering Ceramics with Abrasive Belt GrindingResearch on Grinding of Silicon Particles Reinforced Aluminum Matrix Composites with High Volume Fraction; Investigation of Grinding Characteristics of Cemented Carbides YL10.2 and YF06; Optimization of Grinding Conditions in Non-Axisymmetric Aspherical Grinding; Study on the Grinding Machinability of 9Mn2V under Different Heat Treatment Processes; Study on Force Characteristics of Ultrasonic Vibration-Assisted Sawing Ceramics with Diamond Blade; Chapter 2: Surface Quality Investigation of Glass Polishing Motion Based on Micro-Oscillating Pressing Force with a Compact Robot and Fine Diamond StoneDevelopment of Non-Destructive Inspection System for Grinding Burn-in-Process Detection of Grinding Burn; Feature Extraction Based 3D Model Registration for Surface Finish Quality Evaluation; Dry Sliding Wear Behaviour of Full Pearlite Obtained by Cladding Low Carbon Steel to Hypoeutectoid Steel; Material Properties of a New PCD Made of Boron Doped Diamond Particles; Dynamic Friction Polishing of Diamond Utilizing High Reactive Metallic Tools Evaluation and ANN-Based Prediction on Functional Parameters of Surface Roughness in Precision Grinding of Cast Iron |
| Record Nr. | UNINA-9910813236103321 |
| Pfaffikon, Switzerland : , : TTP, , 2014 | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advances in CMP/polishing technologies for the manufacture of electronic devices / / edited by Toshiro Doi, Ioan D. Marinescu, Syuhei Kurokawa
| Advances in CMP/polishing technologies for the manufacture of electronic devices / / edited by Toshiro Doi, Ioan D. Marinescu, Syuhei Kurokawa |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Oxford, : Elsevier, 2012 |
| Descrizione fisica | 1 online resource (330 p.) |
| Disciplina | 671.35 |
| Altri autori (Persone) |
DoiToshiro K. <1947->
MarinescuIoan D KurokawaSyuhei |
| Soggetto topico | Grinding and polishing |
| ISBN |
1-283-35498-5
9786613354983 1-4377-7860-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front Cover; CMP/Polishing Technologies for the Manufacture of Electronic Devices; Copyright Page; Contents; Contributors; Preface; About the Authors; 1. Introduction; References; 2. Details of the Fabrication Process for Devices with a Silicon Crystal Substrate; 2.1 History of Semiconductor Devices and their Types; 2.2 Semiconductor Device Process Technology and current Situation; 2.2.1 Element Isolation Structure; 2.2.2 Multilayer Interconnections; References; 3. The Current Situation in Ultra-Precision Technology - Silicon Single Crystals as an Example
3.1 Production of Single Crystal Silicon3.2 Slicing: Pre- and Post-Process; 3.2.1 Slicing; 3.2.1.1 Introduction; 3.2.1.2 Abrasive Wire; Loose-Abrasive Wire; Comparison Between Wire Saw and ID Saw; Fundamentals of Free Abrasive Machining; Fixed-Abrasive Wire; Saw Damage on the Surface of Silicon Wafer; 3.2.1.3 Electrical Discharge Machining (EDM); 3.2.1.4 Wire Electrolytic-Spark Hybrid Machining; 3.2.2 Beveling; 3.3 Lapping of Silicon; 3.3.1 Introduction; 3.3.1.1 Brief History; 3.3.2 Lapping Mechanism; 3.3.3 Mathematical Model; 3.3.3.1 Ductile and Brittle Regime 3.3.3.2 Calculation of Material Removal Rate3.3.4 Kinematics; 3.3.4.1 Sliding Velocity; 3.3.4.2 Equation for Streaks on a Work Piece; 3.3.4.3 Equations for Streaks on a Lap; 3.3.4.4 Effects of Different Parameters on Material Removal Rate; Effect of Lapping Pressure on the MRR; Effect of Abrasive Size on the MRR; 3.3.5 Types of Lapping (Focus: Double-Sided Lapping); 3.3.5.1 Double-Sided Lapping; 3.3.5.2 Mechanism; 3.3.5.3 Machine Set-up; 3.3.5.4 Process Cycle; 3.3.5.5 Advantages of Double-Sided Lapping; 3.3.5.6 Parameters of Double-Sided Lapping; 3.3.5.7 Lapping with Bonded Abrasives 3.3.5.8 Process Capabilities for Lapping3.3.6 Abrasives and Lubricants; 3.3.6.1 Types of Abrasives; (1) Diamond; (2) Cubic Boron Nitride (CBN); (3) Norbide Abrasive; (4) Silicon Carbide; (5) Aluminum Oxide; (6) Fused Aluminas; (7) Corundum; (8) Garnet; (9) Unfused Alumina (hydrated-calcined); (10) Micro-Graded Flours; (11) Linde Powders; (12) Other Abrasive Materials; 3.3.7 Equipment; 3.3.7.1 Lapping Plate; 3.3.7.2 Charging of the Lapping Plate; 3.3.7.3 Different Types of Lapping Plate; 3.3.7.4 Carriers Used in Double-Sided Lapping; 3.3.7.5 Ultrasonic Cleaner; 3.3.8 Abrasive Slurry 3.3.8.1 Abrasives3.3.9 Introduction to Silicon; 3.3.10 Lapping of Silicon Wafers - Experiments; 3.3.10.1 Mounting the Wafer; 3.3.10.2 Double-Sided Lapping Kinematics; 3.3.10.3 Lapping Process; 3.3.10.4 Effects of Lapping Wheels; 3.3.10.5 Slurry and Its Effects; 3.3.10.6 Silicon Machining; 3.3.10.7 Common Lapping Wheel Problems and Solutions; 3.3.11 Lapping Machine; 3.3.12 Experimental Set-up; 3.3.13 Experimental Results; Plots; Equations Used to Calculate the Material Removal Rate; Observations; 3.3.14 Conclusions; 3.4 Etching; 3.4.1 Acid Etching of Silicon; 3.4.2 Alkaline Etching of Silicon 3.5 Ultra-Precision Polishing/CMP of Silicon Wafers |
| Record Nr. | UNINA-9911004748103321 |
| Oxford, : Elsevier, 2012 | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Chemical mechanical planarization of microelectronic materials [[electronic resource] /] / Joseph M. Steigerwald, Shyam P. Murarka, Ronald J. Gutmann
| Chemical mechanical planarization of microelectronic materials [[electronic resource] /] / Joseph M. Steigerwald, Shyam P. Murarka, Ronald J. Gutmann |
| Autore | Steigerwald Joseph M |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, 2004 |
| Descrizione fisica | 1 online resource (339 p.) |
| Disciplina |
621.3815
621.38152 |
| Altri autori (Persone) |
MurarkaS. P
GutmannRonald J |
| Soggetto topico |
Microelectronics - Materials
Grinding and polishing |
| ISBN |
1-281-84314-8
9786611843144 3-527-61774-4 3-527-61775-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Chemical Mechanical Planarization of Microelectronic Materials; CONTENTS; Preface; 1 Chemical Mechanical Planarization - An Introduction; 1.1 Introduction; 1.2 Applications; 1.3 The CMP Process; 1.4 CMP Tools; 1.5 Process Integration; 1.6 Conclusion and Book Outline; References; 2 Historical Motivations for CMP; 2.1 Advanced Metallization Schemes; 2.1.1 Interconnect Delay Impact on Performance; 2.1.2 Methods of Reducing Interconnect Delay; 2.1.3 Planarity Requirements for Multilevel Metallization; 2.2 Planarization Schemes; 2.2.1 Smoothing and Local Planarization; 2.2.2 Global Planarization
2.3 CMP Planarization2.3.1 Advantages of CMP; 2.3.2 Disadvantages of CMP; 2.3.3 The Challenge of CMP; References; 3 CMP Variables and Manipulations; 3.1 Output Variables; 3.2 Input Variables; References; 4 Mechanical and Electrochemical Concepts for CMP; 4.1 Preston Equation; 4.2 Fluid Layer Interactions; 4.3 Boundary Layer Interactions; 4.3.1 Fluid Boundary Layer; 4.3.2 Double Layer; 4.3.3 Metal Surface Films; 4.3.4 Mechanical Abrasion; 4.4 Abrasion Modes; 4.4.1 Polishing vs. Grinding; 4.4.2 Hertzian Indentation vs. Fluid-Based Wear; 4.5 The Polishing Pad; 4.5.1 Pad Materials and Properties 4.5.2 Pad Conditioning4.6 Electrochemical Phenomena; 4.6.1 Reduction-Oxidation Reactions; 4.6.2 Pourbaix Diagrams; 4.6.3 Mixed Potential Theory; 4.6.4 Example: Copper CMP in NH3-Based Slurries; 4.6.5 Example: Copper-Titanium Interaction; 4.7 Role of Chemistry in CMP; 4.8 Abrasives; References; 5 Oxide CMP Processes - Mechanisms and Models; 5.1 The Role of Chemistry in Oxide Polishing; 5.1.1 Glass Polishing Mechanisms; 5.1.2 The Role of Water in Oxide Polishing; 5.1.3 Chemical Interactions Between Abrasive and Oxide Surface; 5.2 Oxide CMP in Practice; 5.2.1 Polish Rate Results 5.2.2 Planarization Results5.2.3 CMP in Manufacturing; 5.2.4 Yield Issues; 5.3 Summary; References; 6 Tungsten and CMP Processes; 6.1 Inlaid Metal Patterning; 6.1.1 RIE Etch Back; 6.1.2 Metal CMP; 6.2 Tungsten CMP; 6.2.1 Surface Passivation Model for Tungsten CMP; 6.2.2 Tungsten CMP Processes; 6.3 Summary; References; 7 Copper CMP; 7.1 Proposed Model for Copper CMP; 7.2 Surface Layer Formation - Planarization; 7.2.1 Formation of Native Surface Films; 7.2.2 Formation of Nonnative Cu-BTA Surface Film; 7.3 Material Dissolution; 7.3.1 Removal of Abraded Material 7.3.2 Increasing Solubility with Complexing Agent7.3.3 Increasing Dissolution Rate with Oxidizing Agents; 7.3.4 Chemical Aspect of the Copper CMP Model; 7.4 Preston Equation; 7.4.1 Preston Coefficient; 7.4.2 Polish Rates; 7.4.3 Comparison of Kp Values; 7.5 Polish-Induced Stress; 7.6 Pattern Geometry Effects; 7.6.1 Dishing and Erosion in Cu/SiO2 System; 7.6.2 Optimization of Process to Minimize Dishing and Erosion; 7.6.3 Summary; References; 8 CMP of Other Materials and New CMP Applications; 8.1 The Front-End Applications in Silicon IC Fabrication 8.1.1 Polysilicon CMP for Deep Trench Capacitor Fabrication |
| Record Nr. | UNINA-9910144581703321 |
Steigerwald Joseph M
|
||
| Weinheim, : Wiley-VCH, 2004 | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Chemical mechanical planarization of microelectronic materials [[electronic resource] /] / Joseph M. Steigerwald, Shyam P. Murarka, Ronald J. Gutmann
| Chemical mechanical planarization of microelectronic materials [[electronic resource] /] / Joseph M. Steigerwald, Shyam P. Murarka, Ronald J. Gutmann |
| Autore | Steigerwald Joseph M |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, 2004 |
| Descrizione fisica | 1 online resource (339 p.) |
| Disciplina |
621.3815
621.38152 |
| Altri autori (Persone) |
MurarkaS. P
GutmannRonald J |
| Soggetto topico |
Microelectronics - Materials
Grinding and polishing |
| ISBN |
1-281-84314-8
9786611843144 3-527-61774-4 3-527-61775-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Chemical Mechanical Planarization of Microelectronic Materials; CONTENTS; Preface; 1 Chemical Mechanical Planarization - An Introduction; 1.1 Introduction; 1.2 Applications; 1.3 The CMP Process; 1.4 CMP Tools; 1.5 Process Integration; 1.6 Conclusion and Book Outline; References; 2 Historical Motivations for CMP; 2.1 Advanced Metallization Schemes; 2.1.1 Interconnect Delay Impact on Performance; 2.1.2 Methods of Reducing Interconnect Delay; 2.1.3 Planarity Requirements for Multilevel Metallization; 2.2 Planarization Schemes; 2.2.1 Smoothing and Local Planarization; 2.2.2 Global Planarization
2.3 CMP Planarization2.3.1 Advantages of CMP; 2.3.2 Disadvantages of CMP; 2.3.3 The Challenge of CMP; References; 3 CMP Variables and Manipulations; 3.1 Output Variables; 3.2 Input Variables; References; 4 Mechanical and Electrochemical Concepts for CMP; 4.1 Preston Equation; 4.2 Fluid Layer Interactions; 4.3 Boundary Layer Interactions; 4.3.1 Fluid Boundary Layer; 4.3.2 Double Layer; 4.3.3 Metal Surface Films; 4.3.4 Mechanical Abrasion; 4.4 Abrasion Modes; 4.4.1 Polishing vs. Grinding; 4.4.2 Hertzian Indentation vs. Fluid-Based Wear; 4.5 The Polishing Pad; 4.5.1 Pad Materials and Properties 4.5.2 Pad Conditioning4.6 Electrochemical Phenomena; 4.6.1 Reduction-Oxidation Reactions; 4.6.2 Pourbaix Diagrams; 4.6.3 Mixed Potential Theory; 4.6.4 Example: Copper CMP in NH3-Based Slurries; 4.6.5 Example: Copper-Titanium Interaction; 4.7 Role of Chemistry in CMP; 4.8 Abrasives; References; 5 Oxide CMP Processes - Mechanisms and Models; 5.1 The Role of Chemistry in Oxide Polishing; 5.1.1 Glass Polishing Mechanisms; 5.1.2 The Role of Water in Oxide Polishing; 5.1.3 Chemical Interactions Between Abrasive and Oxide Surface; 5.2 Oxide CMP in Practice; 5.2.1 Polish Rate Results 5.2.2 Planarization Results5.2.3 CMP in Manufacturing; 5.2.4 Yield Issues; 5.3 Summary; References; 6 Tungsten and CMP Processes; 6.1 Inlaid Metal Patterning; 6.1.1 RIE Etch Back; 6.1.2 Metal CMP; 6.2 Tungsten CMP; 6.2.1 Surface Passivation Model for Tungsten CMP; 6.2.2 Tungsten CMP Processes; 6.3 Summary; References; 7 Copper CMP; 7.1 Proposed Model for Copper CMP; 7.2 Surface Layer Formation - Planarization; 7.2.1 Formation of Native Surface Films; 7.2.2 Formation of Nonnative Cu-BTA Surface Film; 7.3 Material Dissolution; 7.3.1 Removal of Abraded Material 7.3.2 Increasing Solubility with Complexing Agent7.3.3 Increasing Dissolution Rate with Oxidizing Agents; 7.3.4 Chemical Aspect of the Copper CMP Model; 7.4 Preston Equation; 7.4.1 Preston Coefficient; 7.4.2 Polish Rates; 7.4.3 Comparison of Kp Values; 7.5 Polish-Induced Stress; 7.6 Pattern Geometry Effects; 7.6.1 Dishing and Erosion in Cu/SiO2 System; 7.6.2 Optimization of Process to Minimize Dishing and Erosion; 7.6.3 Summary; References; 8 CMP of Other Materials and New CMP Applications; 8.1 The Front-End Applications in Silicon IC Fabrication 8.1.1 Polysilicon CMP for Deep Trench Capacitor Fabrication |
| Record Nr. | UNINA-9910830394203321 |
Steigerwald Joseph M
|
||
| Weinheim, : Wiley-VCH, 2004 | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Chemical mechanical planarization of microelectronic materials / / Joseph M. Steigerwald, Shyam P. Murarka, Ronald J. Gutmann
| Chemical mechanical planarization of microelectronic materials / / Joseph M. Steigerwald, Shyam P. Murarka, Ronald J. Gutmann |
| Autore | Steigerwald Joseph M |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, 2004 |
| Descrizione fisica | 1 online resource (339 p.) |
| Disciplina |
621.3815
621.38152 |
| Altri autori (Persone) |
MurarkaS. P
GutmannRonald J |
| Soggetto topico |
Microelectronics - Materials
Grinding and polishing |
| ISBN |
9786611843144
9781281843142 1281843148 9783527617746 3527617744 9783527617753 3527617752 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Chemical Mechanical Planarization of Microelectronic Materials; CONTENTS; Preface; 1 Chemical Mechanical Planarization - An Introduction; 1.1 Introduction; 1.2 Applications; 1.3 The CMP Process; 1.4 CMP Tools; 1.5 Process Integration; 1.6 Conclusion and Book Outline; References; 2 Historical Motivations for CMP; 2.1 Advanced Metallization Schemes; 2.1.1 Interconnect Delay Impact on Performance; 2.1.2 Methods of Reducing Interconnect Delay; 2.1.3 Planarity Requirements for Multilevel Metallization; 2.2 Planarization Schemes; 2.2.1 Smoothing and Local Planarization; 2.2.2 Global Planarization
2.3 CMP Planarization2.3.1 Advantages of CMP; 2.3.2 Disadvantages of CMP; 2.3.3 The Challenge of CMP; References; 3 CMP Variables and Manipulations; 3.1 Output Variables; 3.2 Input Variables; References; 4 Mechanical and Electrochemical Concepts for CMP; 4.1 Preston Equation; 4.2 Fluid Layer Interactions; 4.3 Boundary Layer Interactions; 4.3.1 Fluid Boundary Layer; 4.3.2 Double Layer; 4.3.3 Metal Surface Films; 4.3.4 Mechanical Abrasion; 4.4 Abrasion Modes; 4.4.1 Polishing vs. Grinding; 4.4.2 Hertzian Indentation vs. Fluid-Based Wear; 4.5 The Polishing Pad; 4.5.1 Pad Materials and Properties 4.5.2 Pad Conditioning4.6 Electrochemical Phenomena; 4.6.1 Reduction-Oxidation Reactions; 4.6.2 Pourbaix Diagrams; 4.6.3 Mixed Potential Theory; 4.6.4 Example: Copper CMP in NH3-Based Slurries; 4.6.5 Example: Copper-Titanium Interaction; 4.7 Role of Chemistry in CMP; 4.8 Abrasives; References; 5 Oxide CMP Processes - Mechanisms and Models; 5.1 The Role of Chemistry in Oxide Polishing; 5.1.1 Glass Polishing Mechanisms; 5.1.2 The Role of Water in Oxide Polishing; 5.1.3 Chemical Interactions Between Abrasive and Oxide Surface; 5.2 Oxide CMP in Practice; 5.2.1 Polish Rate Results 5.2.2 Planarization Results5.2.3 CMP in Manufacturing; 5.2.4 Yield Issues; 5.3 Summary; References; 6 Tungsten and CMP Processes; 6.1 Inlaid Metal Patterning; 6.1.1 RIE Etch Back; 6.1.2 Metal CMP; 6.2 Tungsten CMP; 6.2.1 Surface Passivation Model for Tungsten CMP; 6.2.2 Tungsten CMP Processes; 6.3 Summary; References; 7 Copper CMP; 7.1 Proposed Model for Copper CMP; 7.2 Surface Layer Formation - Planarization; 7.2.1 Formation of Native Surface Films; 7.2.2 Formation of Nonnative Cu-BTA Surface Film; 7.3 Material Dissolution; 7.3.1 Removal of Abraded Material 7.3.2 Increasing Solubility with Complexing Agent7.3.3 Increasing Dissolution Rate with Oxidizing Agents; 7.3.4 Chemical Aspect of the Copper CMP Model; 7.4 Preston Equation; 7.4.1 Preston Coefficient; 7.4.2 Polish Rates; 7.4.3 Comparison of Kp Values; 7.5 Polish-Induced Stress; 7.6 Pattern Geometry Effects; 7.6.1 Dishing and Erosion in Cu/SiO2 System; 7.6.2 Optimization of Process to Minimize Dishing and Erosion; 7.6.3 Summary; References; 8 CMP of Other Materials and New CMP Applications; 8.1 The Front-End Applications in Silicon IC Fabrication 8.1.1 Polysilicon CMP for Deep Trench Capacitor Fabrication |
| Record Nr. | UNINA-9911019406703321 |
Steigerwald Joseph M
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| Weinheim, : Wiley-VCH, 2004 | ||
| Lo trovi qui: Univ. Federico II | ||
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CMP Technology : International Conference on Planarization : 25-27 October 2007
| CMP Technology : International Conference on Planarization : 25-27 October 2007 |
| Pubbl/distr/stampa | Frankfurt am Main, Germany : , : VDE, , 2011 |
| Descrizione fisica | 1 online resource (493 pages) |
| Disciplina | 621.92 |
| Soggetto topico | Grinding and polishing |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996215978403316 |
| Frankfurt am Main, Germany : , : VDE, , 2011 | ||
| Lo trovi qui: Univ. di Salerno | ||
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Flexure strength and optical transparency of magnesium-aluminate spinel (MgAlO₄) : influence of polishing and glass coating / / by Steve M Kilczewski [and four others]
| Flexure strength and optical transparency of magnesium-aluminate spinel (MgAlO₄) : influence of polishing and glass coating / / by Steve M Kilczewski [and four others] |
| Autore | Kilczewski Steve M. |
| Pubbl/distr/stampa | Aberdeen Proving Ground, MD : , : US Army Research Laboratory, , December 2016 |
| Descrizione fisica | 1 online resource (vi, 11 pages) : illustrations (some color) |
| Soggetto topico |
Aluminum-magnesium alloys - United States
Aluminates Spinel - United States Transparent solids Grinding and polishing Strength of materials |
| Soggetto genere / forma | Technical reports. |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Flexure strength and optical transparency of magnesium-aluminate spinel |
| Record Nr. | UNINA-9910706199903321 |
Kilczewski Steve M.
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| Aberdeen Proving Ground, MD : , : US Army Research Laboratory, , December 2016 | ||
| Lo trovi qui: Univ. Federico II | ||
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Grinding technology [[electronic resource] ] : theory and application of machining with abrasives, second edition / / Steven Malkin, Changsheng Guo
| Grinding technology [[electronic resource] ] : theory and application of machining with abrasives, second edition / / Steven Malkin, Changsheng Guo |
| Autore | Malkin S (Stephen), <1941-> |
| Edizione | [2nd ed.] |
| Pubbl/distr/stampa | New York, : Industrial Press, c2008 |
| Disciplina | 671.3/5 |
| Soggetto topico |
Grinding and polishing
Mechanical Engineering - General Mechanical Engineering Engineering & Applied Sciences |
| Soggetto genere / forma | Electronic books. |
| ISBN | 1-61344-846-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Grinding Technology - Theory and Applications of Machining with Abrasives |
| Record Nr. | UNINA-9911006794903321 |
Malkin S (Stephen), <1941->
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| New York, : Industrial Press, c2008 | ||
| Lo trovi qui: Univ. Federico II | ||
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