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Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) / / Jon C. Freeman
| Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) / / Jon C. Freeman |
| Autore | Freeman Jon C. |
| Pubbl/distr/stampa | Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , February 2003 |
| Descrizione fisica | 1 online resource (65 pages) : illustrations |
| Collana | NASA/TM |
| Soggetto topico |
Gallium nitrides
Field effect transistors High electron mobility transistors |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Basic equations for the modeling of gallium nitride |
| Record Nr. | UNINA-9910705626303321 |
Freeman Jon C.
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| Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , February 2003 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Cryogenic parametric characterization of gallium nitride switches / / Marcelo C. Gonzalez, Lee W. Kohlman, and Andrew J. Trunek
| Cryogenic parametric characterization of gallium nitride switches / / Marcelo C. Gonzalez, Lee W. Kohlman, and Andrew J. Trunek |
| Autore | Gonzalez Marcelo C. |
| Pubbl/distr/stampa | Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , October 2018 |
| Descrizione fisica | 1 online resource (iii, 26 pages) : color illustrations |
| Collana | NASA/TP |
| Soggetto topico |
Field effect transistors
Gallium nitrides Metal oxide semiconductors |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910711565803321 |
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Gonzalez Marcelo C.
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| Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , October 2018 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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