Info
- Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.
1998 Semiconductor and Insulating Materials Conference
| 1998 Semiconductor and Insulating Materials Conference |
| Pubbl/distr/stampa | [Place of publication not identified], : IEEE, 1998 |
| Disciplina | 621.3815/22 |
| Soggetto topico |
Semiconductors
Gallium arsenide semiconductors Gallium nitride Electrical & Computer Engineering Engineering & Applied Sciences Electrical Engineering |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996212604203316 |
| [Place of publication not identified], : IEEE, 1998 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
1998 Semiconductor and Insulating Materials Conference
| 1998 Semiconductor and Insulating Materials Conference |
| Pubbl/distr/stampa | [Place of publication not identified], : IEEE, 1998 |
| Disciplina | 621.3815/22 |
| Soggetto topico |
Semiconductors
Gallium arsenide semiconductors Gallium nitride Electrical & Computer Engineering Engineering & Applied Sciences Electrical Engineering |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910872866703321 |
| [Place of publication not identified], : IEEE, 1998 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Controlled growth of GaN columns and 3D core-shell LEDs by MOVPE / / von Xue Wang
| Controlled growth of GaN columns and 3D core-shell LEDs by MOVPE / / von Xue Wang |
| Autore | Wang Xue |
| Pubbl/distr/stampa | Gottingen, [Germany] : , : Cuvillier Verlag, , 2015 |
| Descrizione fisica | 1 online resource (187 pages) |
| Disciplina | 661.0675 |
| Soggetto topico | Gallium nitride |
| Soggetto genere / forma | Electronic books. |
| ISBN | 3-7369-8000-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910511489303321 |
Wang Xue
|
||
| Gottingen, [Germany] : , : Cuvillier Verlag, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Controlled growth of GaN columns and 3D core-shell LEDs by MOVPE / / von Xue Wang
| Controlled growth of GaN columns and 3D core-shell LEDs by MOVPE / / von Xue Wang |
| Autore | Wang Xue |
| Pubbl/distr/stampa | Gottingen, [Germany] : , : Cuvillier Verlag, , 2015 |
| Descrizione fisica | 1 online resource (187 pages) |
| Disciplina | 661.0675 |
| Soggetto topico | Gallium nitride |
| ISBN | 3-7369-8000-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910794963503321 |
|
Wang Xue
|
||
| Gottingen, [Germany] : , : Cuvillier Verlag, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Controlled growth of GaN columns and 3D core-shell LEDs by MOVPE / / von Xue Wang
| Controlled growth of GaN columns and 3D core-shell LEDs by MOVPE / / von Xue Wang |
| Autore | Wang Xue |
| Pubbl/distr/stampa | Gottingen, [Germany] : , : Cuvillier Verlag, , 2015 |
| Descrizione fisica | 1 online resource (187 pages) |
| Disciplina | 661.0675 |
| Soggetto topico | Gallium nitride |
| ISBN | 3-7369-8000-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910808522103321 |
|
Wang Xue
|
||
| Gottingen, [Germany] : , : Cuvillier Verlag, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Disruptive wide bandgap semiconductors, related technologies, and their applications / / edited by Yogesh Kumar Sharma
| Disruptive wide bandgap semiconductors, related technologies, and their applications / / edited by Yogesh Kumar Sharma |
| Pubbl/distr/stampa | London, England : , : IntechOpen, , [2018] |
| Descrizione fisica | 1 online resource (x, 142 pages) : illustrations |
| Disciplina | 303.483 |
| Soggetto topico |
Disruptive technologies
Gallium nitride Silicon carbide |
| ISBN |
1-83881-599-6
1-78923-669-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910317797003321 |
| London, England : , : IntechOpen, , [2018] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching [[electronic resource] /] / Fred Semendy, Phillip Boyd, and Unchul Lee
| Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching [[electronic resource] /] / Fred Semendy, Phillip Boyd, and Unchul Lee |
| Autore | Semendy Fred |
| Pubbl/distr/stampa | Adelphi, MD : , : Army Research Laboratory, , [2004] |
| Descrizione fisica | 1 online resource (iv, 15 pages) : illustrations (chiefly color), color charts |
| Altri autori (Persone) |
BoydPhillip
LeeUnchul |
| Collana | ARL-TR |
| Soggetto topico |
Plasma etching
Gallium nitride |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma |
| Record Nr. | UNINA-9910697103903321 |
|
Semendy Fred
|
||
| Adelphi, MD : , : Army Research Laboratory, , [2004] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
GaN transistors for efficient power conversion / / Alex Lidow, Michael de Rooij, Johan Strydom, David Reusch, John Glaser
| GaN transistors for efficient power conversion / / Alex Lidow, Michael de Rooij, Johan Strydom, David Reusch, John Glaser |
| Autore | Lidow Alex |
| Edizione | [Third edition.] |
| Pubbl/distr/stampa | Hoboken, NJ : , : John Wiley & Sons, Inc., , 2020 |
| Disciplina | 621.3815284 |
| Soggetto topico |
Field-effect transistors - Materials
Power transistors - Materials Gallium nitride Transistors à effet de champ - Matériaux Transistors de puissance - Matériaux Nitrure de gallium |
| ISBN |
1-5231-2819-4
1-119-59440-5 1-119-59437-5 1-119-59442-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910830227303321 |
|
Lidow Alex
|
||
| Hoboken, NJ : , : John Wiley & Sons, Inc., , 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
GaN transistors for efficient power conversion / / Alex Lidow [and three others]
| GaN transistors for efficient power conversion / / Alex Lidow [and three others] |
| Autore | Lidow Alex |
| Edizione | [Second edition.] |
| Pubbl/distr/stampa | Chichester, England : , : Wiley, , 2015 |
| Descrizione fisica | 1 online resource (269 pages) |
| Disciplina | 621.3815/284 |
| Collana | THEi Wiley ebooks. |
| Soggetto topico |
Field-effect transistors
Gallium nitride |
| ISBN |
1-118-84479-3
1-118-84478-5 1-118-84477-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
GaN Transistors for Efficient Power Conversion; Contents; Foreword; Acknowledgments; 1 GaN Technology Overview; 1.1 Silicon Power MOSFETs 1976-2010; 1.2 The GaN Journey Begins; 1.3 Why Gallium Nitride?; 1.3.1 Band Gap (Eg); 1.3.2 Critical Field (Ecrit); 1.3.3 On-Resistance (RDS(on)); 1.3.4 The Two-Dimensional Electron Gas; 1.4 The Basic GaN Transistor Structure; 1.4.1 Recessed Gate Enhancement-Mode Structure; 1.4.2 Implanted Gate Enhancement-Mode Structure; 1.4.3 pGaN Gate Enhancement-Mode Structure; 1.4.4 Cascode Hybrid Enhancement-Mode Structure; 1.4.5 Reverse Conduction in HEMT Transistors
1.5 Building a GaN Transistor 1.5.1 Substrate Material Selection; 1.5.2 Growing the Heteroepitaxy; 1.5.3 Processing the Wafer; 1.5.4 Making Electrical Connection to the Outside World; 1.6 Summary; References; 2 GaN Transistor Electrical Characteristics; 2.1 Introduction; 2.2 Key Device Parameters; 2.2.1 Breakdown Voltage (BVDSS) and Leakage Current (IDSS); 2.2.2 On-Resistance (RDS(on)); 2.2.3 Threshold Voltage (VGS(th) or Vth); 2.3 Capacitance and Charge; 2.4 Reverse Conduction; 2.5 Thermal Resistance; 2.6 Transient Thermal Impedance; 2.7 Summary; References; 3 Driving GaN Transistors 3.1 Introduction 3.2 Gate Drive Voltage; 3.3 Bootstrapping and Floating Supplies; 3.4 dv/dt Immunity; 3.5 di/dt Immunity; 3.6 Ground Bounce; 3.7 Common Mode Current; 3.8 Gate Driver Edge Rate; 3.9 Driving Cascode GaN Devices; 3.10 Summary; References; 4 Layout Considerations for GaN Transistor Circuits; 4.1 Introduction; 4.2 Minimizing Parasitic Inductance; 4.3 Conventional Power Loop Designs; 4.4 Optimizing the Power Loop; 4.5 Paralleling GaN Transistors; 4.5.1 Paralleling GaN Transistors for a Single Switch; 4.5.2 Paralleling GaN Transistors for Half-Bridge Applications; 4.6 Summary References 5 Modeling and Measurement of GaN Transistors; 5.1 Introduction; 5.2 Electrical Modeling; 5.2.1 Basic Modeling; 5.2.2 Limitations of Basic Modeling; 5.2.3 Limitations of Circuit Modeling; 5.3 Thermal Modeling; 5.3.1 Improving Thermal Performance; 5.3.2 Modeling of Multiple Die; 5.3.3 Modeling of Complex Systems; 5.4 Measuring GaN Transistor Performance; 5.4.1 Voltage Measurement Requirements; 5.4.2 Current Measurement Requirement; 5.5 Summary; References; 6 Hard-Switching Topologies; 6.1 Introduction; 6.2 Hard-Switching Loss Analysis; 6.2.1 Switching Losses 6.2.2 Output Capacitance (COSS) Losses 6.2.3 Gate Charge (QG) Losses; 6.2.4 Reverse Conduction Losses (PSD); 6.2.5 Reverse Recovery (QRR) Losses; 6.2.6 Total Hard-Switching Losses; 6.2.7 Hard-Switching Figure of Merit; 6.3 External Factors Impacting Hard-Switching Losses; 6.3.1 Impact of Common-Source Inductance; 6.3.2 Impact of High Frequency Power-Loop Inductance on Device Losses; 6.4 Reducing Body Diode Conduction Losses in GaN Transistors; 6.5 Frequency Impact on Magnetics; 6.5.1 Transformers; 6.5.2 Inductors; 6.6 Buck Converter Example; 6.6.1 Output Capacitance Losses 6.6.2 Gate Losses (PG) |
| Record Nr. | UNINA-9910792134303321 |
|
Lidow Alex
|
||
| Chichester, England : , : Wiley, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
GaN transistors for efficient power conversion / / Alex Lidow [and three others]
| GaN transistors for efficient power conversion / / Alex Lidow [and three others] |
| Autore | Lidow Alex |
| Edizione | [Second edition.] |
| Pubbl/distr/stampa | Chichester, England : , : Wiley, , 2015 |
| Descrizione fisica | 1 online resource (269 pages) |
| Disciplina | 621.3815/284 |
| Collana | THEi Wiley ebooks. |
| Soggetto topico |
Field-effect transistors
Gallium nitride |
| ISBN |
1-118-84479-3
1-118-84478-5 1-118-84477-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
GaN Transistors for Efficient Power Conversion; Contents; Foreword; Acknowledgments; 1 GaN Technology Overview; 1.1 Silicon Power MOSFETs 1976-2010; 1.2 The GaN Journey Begins; 1.3 Why Gallium Nitride?; 1.3.1 Band Gap (Eg); 1.3.2 Critical Field (Ecrit); 1.3.3 On-Resistance (RDS(on)); 1.3.4 The Two-Dimensional Electron Gas; 1.4 The Basic GaN Transistor Structure; 1.4.1 Recessed Gate Enhancement-Mode Structure; 1.4.2 Implanted Gate Enhancement-Mode Structure; 1.4.3 pGaN Gate Enhancement-Mode Structure; 1.4.4 Cascode Hybrid Enhancement-Mode Structure; 1.4.5 Reverse Conduction in HEMT Transistors
1.5 Building a GaN Transistor 1.5.1 Substrate Material Selection; 1.5.2 Growing the Heteroepitaxy; 1.5.3 Processing the Wafer; 1.5.4 Making Electrical Connection to the Outside World; 1.6 Summary; References; 2 GaN Transistor Electrical Characteristics; 2.1 Introduction; 2.2 Key Device Parameters; 2.2.1 Breakdown Voltage (BVDSS) and Leakage Current (IDSS); 2.2.2 On-Resistance (RDS(on)); 2.2.3 Threshold Voltage (VGS(th) or Vth); 2.3 Capacitance and Charge; 2.4 Reverse Conduction; 2.5 Thermal Resistance; 2.6 Transient Thermal Impedance; 2.7 Summary; References; 3 Driving GaN Transistors 3.1 Introduction 3.2 Gate Drive Voltage; 3.3 Bootstrapping and Floating Supplies; 3.4 dv/dt Immunity; 3.5 di/dt Immunity; 3.6 Ground Bounce; 3.7 Common Mode Current; 3.8 Gate Driver Edge Rate; 3.9 Driving Cascode GaN Devices; 3.10 Summary; References; 4 Layout Considerations for GaN Transistor Circuits; 4.1 Introduction; 4.2 Minimizing Parasitic Inductance; 4.3 Conventional Power Loop Designs; 4.4 Optimizing the Power Loop; 4.5 Paralleling GaN Transistors; 4.5.1 Paralleling GaN Transistors for a Single Switch; 4.5.2 Paralleling GaN Transistors for Half-Bridge Applications; 4.6 Summary References 5 Modeling and Measurement of GaN Transistors; 5.1 Introduction; 5.2 Electrical Modeling; 5.2.1 Basic Modeling; 5.2.2 Limitations of Basic Modeling; 5.2.3 Limitations of Circuit Modeling; 5.3 Thermal Modeling; 5.3.1 Improving Thermal Performance; 5.3.2 Modeling of Multiple Die; 5.3.3 Modeling of Complex Systems; 5.4 Measuring GaN Transistor Performance; 5.4.1 Voltage Measurement Requirements; 5.4.2 Current Measurement Requirement; 5.5 Summary; References; 6 Hard-Switching Topologies; 6.1 Introduction; 6.2 Hard-Switching Loss Analysis; 6.2.1 Switching Losses 6.2.2 Output Capacitance (COSS) Losses 6.2.3 Gate Charge (QG) Losses; 6.2.4 Reverse Conduction Losses (PSD); 6.2.5 Reverse Recovery (QRR) Losses; 6.2.6 Total Hard-Switching Losses; 6.2.7 Hard-Switching Figure of Merit; 6.3 External Factors Impacting Hard-Switching Losses; 6.3.1 Impact of Common-Source Inductance; 6.3.2 Impact of High Frequency Power-Loop Inductance on Device Losses; 6.4 Reducing Body Diode Conduction Losses in GaN Transistors; 6.5 Frequency Impact on Magnetics; 6.5.1 Transformers; 6.5.2 Inductors; 6.6 Buck Converter Example; 6.6.1 Output Capacitance Losses 6.6.2 Gate Losses (PG) |
| Record Nr. | UNINA-9910808289103321 |
|
Lidow Alex
|
||
| Chichester, England : , : Wiley, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
