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1998 Semiconductor and Insulating Materials Conference
| 1998 Semiconductor and Insulating Materials Conference |
| Pubbl/distr/stampa | [Place of publication not identified], : IEEE, 1998 |
| Disciplina | 621.3815/22 |
| Soggetto topico |
Semiconductors
Gallium arsenide semiconductors Gallium nitride Electrical & Computer Engineering Engineering & Applied Sciences Electrical Engineering |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996212604203316 |
| [Place of publication not identified], : IEEE, 1998 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
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1998 Semiconductor and Insulating Materials Conference
| 1998 Semiconductor and Insulating Materials Conference |
| Pubbl/distr/stampa | [Place of publication not identified], : IEEE, 1998 |
| Disciplina | 621.3815/22 |
| Soggetto topico |
Semiconductors
Gallium arsenide semiconductors Gallium nitride Electrical & Computer Engineering Engineering & Applied Sciences Electrical Engineering |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910872866703321 |
| [Place of publication not identified], : IEEE, 1998 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Controlled growth of GaN columns and 3D core-shell LEDs by MOVPE / / von Xue Wang
| Controlled growth of GaN columns and 3D core-shell LEDs by MOVPE / / von Xue Wang |
| Autore | Wang Xue |
| Pubbl/distr/stampa | Gottingen, [Germany] : , : Cuvillier Verlag, , 2015 |
| Descrizione fisica | 1 online resource (187 pages) |
| Disciplina | 661.0675 |
| Soggetto topico | Gallium nitride |
| Soggetto genere / forma | Electronic books. |
| ISBN | 3-7369-8000-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910511489303321 |
Wang Xue
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| Gottingen, [Germany] : , : Cuvillier Verlag, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Controlled growth of GaN columns and 3D core-shell LEDs by MOVPE / / von Xue Wang
| Controlled growth of GaN columns and 3D core-shell LEDs by MOVPE / / von Xue Wang |
| Autore | Wang Xue |
| Pubbl/distr/stampa | Gottingen, [Germany] : , : Cuvillier Verlag, , 2015 |
| Descrizione fisica | 1 online resource (187 pages) |
| Disciplina | 661.0675 |
| Soggetto topico | Gallium nitride |
| ISBN | 3-7369-8000-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910794963503321 |
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Wang Xue
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| Gottingen, [Germany] : , : Cuvillier Verlag, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Controlled growth of GaN columns and 3D core-shell LEDs by MOVPE / / von Xue Wang
| Controlled growth of GaN columns and 3D core-shell LEDs by MOVPE / / von Xue Wang |
| Autore | Wang Xue |
| Pubbl/distr/stampa | Gottingen, [Germany] : , : Cuvillier Verlag, , 2015 |
| Descrizione fisica | 1 online resource (187 pages) |
| Disciplina | 661.0675 |
| Soggetto topico | Gallium nitride |
| ISBN | 3-7369-8000-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910808522103321 |
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Wang Xue
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| Gottingen, [Germany] : , : Cuvillier Verlag, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Disruptive wide bandgap semiconductors, related technologies, and their applications / / edited by Yogesh Kumar Sharma
| Disruptive wide bandgap semiconductors, related technologies, and their applications / / edited by Yogesh Kumar Sharma |
| Pubbl/distr/stampa | London, England : , : IntechOpen, , [2018] |
| Descrizione fisica | 1 online resource (x, 142 pages) : illustrations |
| Disciplina | 303.483 |
| Soggetto topico |
Disruptive technologies
Gallium nitride Silicon carbide |
| ISBN |
1-83881-599-6
1-78923-669-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910317797003321 |
| London, England : , : IntechOpen, , [2018] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching / / Fred Semendy, Phillip Boyd, and Unchul Lee
| Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching / / Fred Semendy, Phillip Boyd, and Unchul Lee |
| Autore | Semendy Fred |
| Pubbl/distr/stampa | Adelphi, MD : , : Army Research Laboratory, , [2004] |
| Descrizione fisica | 1 online resource (iv, 15 pages) : illustrations (chiefly color), color charts |
| Altri autori (Persone) |
BoydPhillip
LeeUnchul |
| Collana | ARL-TR |
| Soggetto topico |
Plasma etching
Gallium nitride |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma |
| Record Nr. | UNINA-9910697103903321 |
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Semendy Fred
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| Adelphi, MD : , : Army Research Laboratory, , [2004] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Gallium nitride (GaN) monolithic microwave integrated circuit (MMMIC) designs submitted to Air Force Research Laboratory (AFRL)-sponsored Qorvo fabrication / / by John E. Penn
| Gallium nitride (GaN) monolithic microwave integrated circuit (MMMIC) designs submitted to Air Force Research Laboratory (AFRL)-sponsored Qorvo fabrication / / by John E. Penn |
| Autore | Penn John E. |
| Pubbl/distr/stampa | [Adelphi, Md.] : , : US Army Research Laboratory, , July 2017 |
| Descrizione fisica | 1 online resource (vi, 16 pages) : color illustrations |
| Collana | ARL-TN |
| Soggetto topico |
Gallium nitride
Microwave integrated circuits - Design and construction |
| Soggetto genere / forma | Technical reports. |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Gallium nitride |
| Record Nr. | UNINA-9910712319303321 |
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Penn John E.
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| [Adelphi, Md.] : , : US Army Research Laboratory, , July 2017 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Gallium nitride monolithic microwave integrated circuit using 0.25-æm Qorvo process / / by John E. Penn
| Gallium nitride monolithic microwave integrated circuit using 0.25-æm Qorvo process / / by John E. Penn |
| Autore | Penn John E. |
| Pubbl/distr/stampa | [Adelphi, Md.] : , : US Army Research Laboratory, , July 2017 |
| Descrizione fisica | 1 online resource (vi, 22 pages) : color illustrations |
| Collana | ARL-TN |
| Soggetto topico |
Gallium nitride
Microwave integrated circuits - Design and construction |
| Soggetto genere / forma | Technical reports. |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910712319203321 |
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Penn John E.
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| [Adelphi, Md.] : , : US Army Research Laboratory, , July 2017 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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GaN Power Devices for Efficient Power Conversion
| GaN Power Devices for Efficient Power Conversion |
| Autore | Lidow Alex |
| Edizione | [4th ed.] |
| Pubbl/distr/stampa | Wiley, 2024 |
| Descrizione fisica | 1 online resource (499 pages) |
| Disciplina | 621.3815/284 |
| Altri autori (Persone) |
De RooijMichael
GlaserJohn (Electrical engineer) PozoAlejandro ZhangShengke PalmaMarco ReuschDavid StrydomJohan |
| Soggetto topico |
Field-effect transistors
Power transistors Gallium nitride |
| ISBN |
9781394286973
139428697X 9781394286966 1394286961 9781394286980 1394286988 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Chapter 1 GaN Technology Overview Chapter 2 GaN Transistor Electrical Characteristics Chapter 3 Driving GaN Transistors Chapter 4 Layout Considerations for GaN Transistor Circuits Chapter 5 GaN Reliability Chapter 6 Thermal Management of GaN Devices Chapter 7 Hard-Switching Topologies Chapter 8 Resonant and Soft-Switching Converters Chapter 9 RF Performance Chapter 10 DC-DC Power Conversion Chapter 11 Multilevel Converters Chapter 12 Class D•Audio Amplifiers Chapter 13 High Current Nanosecond Laser Drivers for Lidar Chapter 14 Motor Drives Chapter 15 GaN Transistors and Integrated Circuits for Space Applications Chapter 16 Replacing Silicon Power MOSFETs EULA |
| Record Nr. | UNINA-9911019229803321 |
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Lidow Alex
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| Wiley, 2024 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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