20 GHz monolithic transmit modules / / J.A. Higgins, principal investigator |
Autore | Higgins J. A. |
Pubbl/distr/stampa | Thousand Oaks CA : , : Rockwell International Science Center, , May 1988 |
Descrizione fisica | 1 online resource (viii, 80, 5 pages, 7 unnumbered pages) : illustrated |
Collana | NASA CR |
Soggetto topico |
Field effect transistors
Phase shift circuits Power amplifiers Gallium arsenides Ion implantation |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910703867603321 |
Higgins J. A.
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Thousand Oaks CA : , : Rockwell International Science Center, , May 1988 | ||
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Lo trovi qui: Univ. Federico II | ||
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20 GHz spacecraft FET solid state transmitter / by J. Goel and S. Yuan |
Autore | Goel J. |
Pubbl/distr/stampa | Redondo Beach, CA : , : TRW Electronic Systems Group |
Descrizione fisica | 1 online resource (viii pages, 173 unnumbered pages) : illustrations |
Collana | NASA CR |
Soggetto topico |
Amplifier design
Field effect transistors Spacecraft communication Gallium arsenides Systems engineering |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910702677703321 |
Goel J.
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Redondo Beach, CA : , : TRW Electronic Systems Group | ||
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Lo trovi qui: Univ. Federico II | ||
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Annual report for contract no. NAS3-23781, 20 GHz GaAs monolithic power amplifier module development, 18 May 1983 - 17 May 1984 [[electronic resource]] |
Pubbl/distr/stampa | [Washington, DC] : , : [National Aeronautics and Space Administration], , [1984] |
Descrizione fisica | 1 volume |
Collana | NASA-CR |
Soggetto topico |
Field effect transistors
Gallium arsenides Integrated circuits Power amplifiers |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Altri titoli varianti | 20 GHz GaAs monolithic power amplifier module development, 18 May 1983 - 17 May 1984 |
Record Nr. | UNINA-9910690138503321 |
[Washington, DC] : , : [National Aeronautics and Space Administration], , [1984] | ||
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Lo trovi qui: Univ. Federico II | ||
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Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) / / Jon C. Freeman |
Autore | Freeman Jon C. |
Pubbl/distr/stampa | Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , February 2003 |
Descrizione fisica | 1 online resource (65 pages) : illustrations |
Collana | NASA/TM |
Soggetto topico |
Gallium nitrides
Field effect transistors High electron mobility transistors |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Altri titoli varianti | Basic equations for the modeling of gallium nitride |
Record Nr. | UNINA-9910705626303321 |
Freeman Jon C.
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Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , February 2003 | ||
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Lo trovi qui: Univ. Federico II | ||
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Cryogenic parametric characterization of gallium nitride switches / / Marcelo C. Gonzalez, Lee W. Kohlman, and Andrew J. Trunek |
Autore | Gonzalez Marcelo C. |
Pubbl/distr/stampa | Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , October 2018 |
Descrizione fisica | 1 online resource (iii, 26 pages) : color illustrations |
Collana | NASA/TP |
Soggetto topico |
Field effect transistors
Gallium nitrides Metal oxide semiconductors |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910711565803321 |
Gonzalez Marcelo C.
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Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , October 2018 | ||
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Lo trovi qui: Univ. Federico II | ||
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Power MOSFET thermal instability operation characterization support [[electronic resource] /] / John L. Shue and Henning W. Leidecker |
Autore | Shue John L |
Pubbl/distr/stampa | Hampton, Va. : , : National Aeronautics and Space Administration, Langley Research Center, , [2010] |
Descrizione fisica | 1 online resource (iv, 16 pages) : illustrations |
Altri autori (Persone) | LeideckerHenning W |
Collana | NASA/TM- |
Soggetto topico |
Metal oxide semiconductors
Field effect transistors Thermal instability Charge carriers Ground support equipment |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910699506403321 |
Shue John L
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Hampton, Va. : , : National Aeronautics and Space Administration, Langley Research Center, , [2010] | ||
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Lo trovi qui: Univ. Federico II | ||
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Programmable, automated transistor test system / / Long V. Truong and Gale R. Sundburg |
Autore | Truong Long V. |
Pubbl/distr/stampa | Washington, D.C. : , : National Aeronautics and Space Administration, Scientific and Technical Information Branch, , February 1986 |
Descrizione fisica | 1 online resource (22 pages) : illustrations |
Collana | NASA/TP |
Soggetto topico |
Bipolar transistors
Performance tests Field effect transistors Numerical control Software engineering Transistors - Testing - Computer programs Bipolar transistors - Testing - Computer programs Metal oxide semiconductors - Testing - Computer programs |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910709716503321 |
Truong Long V.
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Washington, D.C. : , : National Aeronautics and Space Administration, Scientific and Technical Information Branch, , February 1986 | ||
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Lo trovi qui: Univ. Federico II | ||
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