Annual report on contract NAS8-36645 entitled partial analysis of experiment LDEF A-0114 [[electronic resource] ] : for the period ending May 31st, 1986 / / J.C. Gregory, principal investigator
| Annual report on contract NAS8-36645 entitled partial analysis of experiment LDEF A-0114 [[electronic resource] ] : for the period ending May 31st, 1986 / / J.C. Gregory, principal investigator |
| Autore | Gregory J. C |
| Pubbl/distr/stampa | Huntsville, AL : , : Institute for Surface Science and Chemistry Dept., the Unviversity of Alabama in Huntsville : , : National Aeronautics and Space Administration, George C. Marshall Space Flight Center, , [1986] |
| Descrizione fisica | 1 volume |
| Collana | NASA CR |
| Soggetto topico |
Earth orbital environments
Environmental tests Etching Metal surfaces Oxidation Oxygen atoms Spaceborne experiments Surface reactions Thin films |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Annual report on contract NAS8-36645 entitled partial analysis of experiment LDEF A-0114 |
| Record Nr. | UNINA-9910698890003321 |
Polygraphice: or, The arts of drawing, engraving, etching, limning, painting, vernishing, japaning, gilding, &c . The second volumn [[electronic resource] ] : Containing the latter five books. Viz. VII. Of alchymie, and the grand elixir of philosophers. VIII. Of the 112 chymical arcana of Peter Faber. IX. Of chiromantical signatures. X. Of staining and painting glass, enamel, and gems. XI. Of vernishing, japaning, and gilding. The seventh and ninth books, are almost all of them, and the two last wholly new. / / By William Salmon .
| Polygraphice: or, The arts of drawing, engraving, etching, limning, painting, vernishing, japaning, gilding, &c . The second volumn [[electronic resource] ] : Containing the latter five books. Viz. VII. Of alchymie, and the grand elixir of philosophers. VIII. Of the 112 chymical arcana of Peter Faber. IX. Of chiromantical signatures. X. Of staining and painting glass, enamel, and gems. XI. Of vernishing, japaning, and gilding. The seventh and ninth books, are almost all of them, and the two last wholly new. / / By William Salmon . |
| Autore | Salmon William <1644-1713.> |
| Pubbl/distr/stampa | London, : Printed for A. and J. Churchill, at the Black Swan in Paternoster Row. And J. Nicholson, at the King's-Arms in Little-Britain., MDCCI. [1701] |
| Descrizione fisica | [2]+ p |
| Soggetto topico |
Engraving
Drawing Etching Painting |
| Soggetto genere / forma | Title pages18th century.England |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996395600203316 |
Salmon William <1644-1713.>
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| London, : Printed for A. and J. Churchill, at the Black Swan in Paternoster Row. And J. Nicholson, at the King's-Arms in Little-Britain., MDCCI. [1701] | ||
| Lo trovi qui: Univ. di Salerno | ||
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Two-step MOVPE, in-situ etching and buried implantation
| Two-step MOVPE, in-situ etching and buried implantation |
| Autore | della Casa Pietro |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Göttingen : , : Cuvillier Verlag, , 2021 |
| Descrizione fisica | 1 online resource (251 pages) |
| Disciplina | 537.6226 |
| Collana | Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik |
| Soggetto topico |
Etching
Diodes |
| ISBN |
9783736963979
3736963971 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Intro -- 1 Introduction -- 2 Zincblende III-V semiconductors -- 2.2 Zincblende crystal structure -- 2.3 Point defects in III-V semiconductors -- 2.4 III-V semiconductors and optoelectronics -- 3 MOVPE growth of III-V compounds -- 3.1 Introductory remarks on the MOVPE technique -- 3.2 Planetary reactors AIX2400G3 and AIX2800G4 -- 3.3 Precursors selected for the experimental work -- 3.4 Dopants and impurities incorporation -- 4 In-situ etching with CBr4 -- 4.1 Motivation for in-situ etching -- 4.2 Pre-existing research on in-situ etching -- 4.3 Investigation of CBr4 etching of GaAs -- 4.4 Investigation of CBr4 etching of GaAs assisted with TMGa and TMAl -- 4.5 CBr4 etching of AlGaAs and GaInP -- 5 SG-DBR tunable lasers -- 5.1 Chapter introduction -- 5.2 SG-DBR lasers -- 5.3 Thermally tuned SG-DBR lasers -- 5.4 Investigation of electronic tuning -- 6 Buried-mesa broad-area lasers -- 6.1 Chapter introduction -- 6.2 High-power lasers -- 6.3 Structure and process -- 6.4 Results and discussion -- 6.5 Chapter summary and conclusions -- 7 Lasers with buried implantation -- 7.1 Chapter introduction -- 7.2 Ion implantation -- 7.3 Device description and fabrication procedure -- 7.4 Material characterization -- 7.5 Characterization of as-cleaved devices -- 7.6 Characterization of coated and mounted devices -- 7.7 Step-stress tests -- 7.8 Chapter summary and conclusions -- 8 Summary and outlook -- A1 Zincblende III-V semiconductors and related properties -- A1.1 Appendix content -- A1.2 Composition, bonding and related properties -- A1.3 Crystal structure -- A1.4 Ternary and higher order compounds -- A1.5 Epitaxial multilayers: mismatch, strain, relaxation -- A1.6 Defects -- A1.7 Electronic structure and related properties -- A1.8 Carrier transport -- A1.9 Interband transitions -- A1.10 Optical properties in the transparency region.
A2 Some general aspects of III-V MOVPE -- A2.1 Different III-V epitaxy techniques -- A2.2 General considerations about MOVPE reactors -- A2.3 Precursors for the growth of arsenides and phosphides -- A2.4 Surface processes -- A2.5 Stoichiometry, composition and impurity control in MOVPE -- A3 Justification of the equations used in modeling the CBr4+TMAl etch -- A4 Model for the calculation of αip in the implanted sections -- Glossary -- References. |
| Altri titoli varianti | Two-step MOVPE, in-situ etching and buried implantation |
| Record Nr. | UNINA-9911046723803321 |
della Casa Pietro
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| Göttingen : , : Cuvillier Verlag, , 2021 | ||
| Lo trovi qui: Univ. Federico II | ||
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