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Biblioteca

MARC Lista (tabellare)
2003 International Conference on Indium Phosphide and Related Materials
2003 International Conference on Indium Phosphide and Related Materials
Pubbl/distr/stampa [Place of publication not identified], : I E E E, 2003
Descrizione fisica 1 online resource (592 pages)
Disciplina 548
Soggetto topico Epitaxy
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNISA-996210052003316
[Place of publication not identified], : I E E E, 2003
Materiale a stampa
Lo trovi qui: Univ. di Salerno
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2003 International Conference on Indium Phosphide and Related Materials
2003 International Conference on Indium Phosphide and Related Materials
Pubbl/distr/stampa [Place of publication not identified], : I E E E, 2003
Descrizione fisica 1 online resource (592 pages)
Disciplina 548
Soggetto topico Epitaxy
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910872941403321
[Place of publication not identified], : I E E E, 2003
Materiale a stampa
Lo trovi qui: Univ. Federico II
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Advanced epitaxy for future electronics, optics, and quantum physics [[electronic resource] /] / by Arthur C. Gossard
Advanced epitaxy for future electronics, optics, and quantum physics [[electronic resource] /] / by Arthur C. Gossard
Autore Gossard A. C
Pubbl/distr/stampa Washington, D.C., : National Academy Press, c2000
Descrizione fisica 1 online resource (19 p.)
Disciplina 548/.5
Collana International science lecture series
The compass series
Soggetto topico Epitaxy
Soggetto genere / forma Electronic books.
ISBN 0-309-51287-5
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910456004403321
Gossard A. C  
Washington, D.C., : National Academy Press, c2000
Materiale a stampa
Lo trovi qui: Univ. Federico II
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Advanced epitaxy for future electronics, optics, and quantum physics [[electronic resource] /] / by Arthur C. Gossard
Advanced epitaxy for future electronics, optics, and quantum physics [[electronic resource] /] / by Arthur C. Gossard
Autore Gossard A. C
Pubbl/distr/stampa Washington, D.C., : National Academy Press, c2000
Descrizione fisica 1 online resource (19 p.)
Disciplina 548/.5
Collana International science lecture series
The compass series
Soggetto topico Epitaxy
ISBN 0-309-18396-0
0-309-51287-5
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910778609003321
Gossard A. C  
Washington, D.C., : National Academy Press, c2000
Materiale a stampa
Lo trovi qui: Univ. Federico II
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Advanced epitaxy for future electronics, optics, and quantum physics / / by Arthur C. Gossard
Advanced epitaxy for future electronics, optics, and quantum physics / / by Arthur C. Gossard
Autore Gossard A. C
Edizione [1st ed.]
Pubbl/distr/stampa Washington, D.C., : National Academy Press, c2000
Descrizione fisica 1 online resource (19 p.)
Disciplina 548/.5
Collana International science lecture series
The compass series
Soggetto topico Epitaxy
ISBN 0-309-18396-0
0-309-51287-5
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Front Matter -- Preface -- Abstract -- Advanced Epitaxy for Future Electronics, Optics, and Quantum Physics.
Record Nr. UNINA-9910825656403321
Gossard A. C  
Washington, D.C., : National Academy Press, c2000
Materiale a stampa
Lo trovi qui: Univ. Federico II
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Advances in epitaxy and endotaxy : physical problems of epitaxy / edited by Helmut G. Schneider and Volker Ruth
Advances in epitaxy and endotaxy : physical problems of epitaxy / edited by Helmut G. Schneider and Volker Ruth
Autore Ruth, Volker
Pubbl/distr/stampa Leipzig : VEB Deutscher Verlag fur Grundstoffindustrie, 1971
Descrizione fisica 251 p. : ill. ; 24 cm.
Altri autori (Persone) Schneider, Helmut G.
Soggetto topico Epitaxy
Classificazione 53.7.8
53.8.3
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNISALENTO-991000801429707536
Ruth, Volker  
Leipzig : VEB Deutscher Verlag fur Grundstoffindustrie, 1971
Materiale a stampa
Lo trovi qui: Univ. del Salento
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Atomic layer deposition [[electronic resource] ] : principles, characteristics, and nanotechnology applications / / Tommi Kaariainen ... [et al.]
Atomic layer deposition [[electronic resource] ] : principles, characteristics, and nanotechnology applications / / Tommi Kaariainen ... [et al.]
Autore Kaariainen Tommi
Edizione [2nd ed.]
Pubbl/distr/stampa Hoboken, NJ, : John Wiley & Sons, c2013
Descrizione fisica 1 online resource (272 p.)
Disciplina 620/.5
Altri autori (Persone) CameronDavid <1949->
KääriäinenMarja-Leena
ShermanArthur <1931->
Soggetto topico Chemical vapor deposition
Epitaxy
Microelectronics
Nanotechnology
ISBN 1-118-74740-2
1-118-74742-9
1-118-74738-0
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Cover; Title Page; Copyright Page; Contents; Acknowledgements; Foreword; Preface; 1 Fundamentals of Atomic Layer Deposition; 1.1 Chemical Vapour Deposition; 1.1.1 Thermal CVD; 1.1.2 Plasma Enhanced CVD (PECVD); 1.2 Vapour Adsorption; 1.2.1 Physisorption; 1.2.2 Chemisorption; 1.3 Atomic Layer Deposition (ALD); 1.3.1 Thermal ALD Processes; 1.3.2 Radical Enhanced ALD (REALD); 1.3.3 Spatial ALD (SALD); References; 2 Elemental Semiconductor Epitaxial Films; 2.1 Epitaxial Silicon; 2.1.1 Dichlorosilane Processes; 2.1.2 Other Processes; 2.1.3 Epitaxial Germanium; References
3 III-V Semiconductor Films3.1 Gallium Arsenide; 3.1.1 Organometallic Precursors; 3.1.2 Halogen Precursors; 3.2 Other III-V Semiconductor Films; 3.3 Applications; 3.3.1 Photonic Structures; 3.3.2 Transistors; References; 4 Oxide films; 4.1 Introduction; 4.2 Aluminum Oxide; 4.2.1 Processes and Properties of Aluminum Oxide; 4.3 Titanium Dioxide; 4.3.1 Processes and Properties of TiO2; 4.4 Zinc Oxide; 4.4.1 Processes and Properties of ZnO; 4.5 Zirconium Dioxide; 4.5.1 Processes and Properties of ZrO2; 4.6 Hafnium Dioxide; 4.6.1 Processes and Properties of HfO2; 4.7 Other Oxides; 4.7.1 Tin Oxide
4.7.2 Indium Oxide4.7.3 Tantalum Oxide; 4.8 Mixed Oxides and Nanolaminates; 4.8.1 Mixed Oxide Processes; 4.8.2 Nanolaminate Oxides; 4.9 Multilayers; References; 5 Nitrides and Other Compounds; 5.1 Introduction; 5.2 Nitrides; 5.2.1 Transition Metal Nitrides; 5.2.2 Group III Nitrides; 5.2.3 Group IV Nitrides; 5.2.4 Mixed Nitrides; 5.3 Chalcogenides; 5.4 Other Compounds; References; 6 Metals; 6.1 Introduction; 6.2 Noble Metals; 6.2.1 Silver Processes and Applications; 6.2.2 Ruthenium Processes and Applications; 6.2.3 Platinum and Palladium Processes and Applications
6.2.4 Rhrodium Processes and Applications6.2.5 Iridium Processes and Applications; 6.3 Titanium; 6.4 Tantalum; 6.5 Aluminum; 6.6 Copper; 6.7 Other Transition Metals; References; 7 Organic and Hybrid Materials; 7.1 Introduction; 7.2 Organic layers; 7.3 Hybrid Organic-inorganic Layers.; 7.4 Applications of Organic and Hybrid Films; References; 8 ALD Applications and Industry; 8.1 Introduction; 8.2 MEMS/NEMS; 8.3 Thin Film Magnetic Heads; 8.4 Coating Nanoparticles, Nanomaterials and Porous Objects; 8.5 Optical Coatings; 8.6 Thin Film Electroluminescent Displays; 8.7 Solar Cells
8.8 Anti-corrosion Layers8.9 Opportunities in Organic Electronics; 8.10 ALD Tool Manufacturers and Coating Providers; References; Index
Record Nr. UNINA-9910141573603321
Kaariainen Tommi  
Hoboken, NJ, : John Wiley & Sons, c2013
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Atomic layer deposition : principles, characteristics, and nanotechnology applications / / Tommi Kaariainen ... [et al.]
Atomic layer deposition : principles, characteristics, and nanotechnology applications / / Tommi Kaariainen ... [et al.]
Autore Kaariainen Tommi
Edizione [2nd ed.]
Pubbl/distr/stampa Hoboken, NJ, : John Wiley & Sons, c2013
Descrizione fisica 1 online resource (272 p.)
Disciplina 620/.5
Altri autori (Persone) CameronDavid <1949->
KääriäinenMarja-Leena
ShermanArthur <1931->
Soggetto topico Chemical vapor deposition
Epitaxy
Microelectronics
Nanotechnology
ISBN 1-118-74740-2
1-118-74742-9
1-118-74738-0
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Cover; Title Page; Copyright Page; Contents; Acknowledgements; Foreword; Preface; 1 Fundamentals of Atomic Layer Deposition; 1.1 Chemical Vapour Deposition; 1.1.1 Thermal CVD; 1.1.2 Plasma Enhanced CVD (PECVD); 1.2 Vapour Adsorption; 1.2.1 Physisorption; 1.2.2 Chemisorption; 1.3 Atomic Layer Deposition (ALD); 1.3.1 Thermal ALD Processes; 1.3.2 Radical Enhanced ALD (REALD); 1.3.3 Spatial ALD (SALD); References; 2 Elemental Semiconductor Epitaxial Films; 2.1 Epitaxial Silicon; 2.1.1 Dichlorosilane Processes; 2.1.2 Other Processes; 2.1.3 Epitaxial Germanium; References
3 III-V Semiconductor Films3.1 Gallium Arsenide; 3.1.1 Organometallic Precursors; 3.1.2 Halogen Precursors; 3.2 Other III-V Semiconductor Films; 3.3 Applications; 3.3.1 Photonic Structures; 3.3.2 Transistors; References; 4 Oxide films; 4.1 Introduction; 4.2 Aluminum Oxide; 4.2.1 Processes and Properties of Aluminum Oxide; 4.3 Titanium Dioxide; 4.3.1 Processes and Properties of TiO2; 4.4 Zinc Oxide; 4.4.1 Processes and Properties of ZnO; 4.5 Zirconium Dioxide; 4.5.1 Processes and Properties of ZrO2; 4.6 Hafnium Dioxide; 4.6.1 Processes and Properties of HfO2; 4.7 Other Oxides; 4.7.1 Tin Oxide
4.7.2 Indium Oxide4.7.3 Tantalum Oxide; 4.8 Mixed Oxides and Nanolaminates; 4.8.1 Mixed Oxide Processes; 4.8.2 Nanolaminate Oxides; 4.9 Multilayers; References; 5 Nitrides and Other Compounds; 5.1 Introduction; 5.2 Nitrides; 5.2.1 Transition Metal Nitrides; 5.2.2 Group III Nitrides; 5.2.3 Group IV Nitrides; 5.2.4 Mixed Nitrides; 5.3 Chalcogenides; 5.4 Other Compounds; References; 6 Metals; 6.1 Introduction; 6.2 Noble Metals; 6.2.1 Silver Processes and Applications; 6.2.2 Ruthenium Processes and Applications; 6.2.3 Platinum and Palladium Processes and Applications
6.2.4 Rhrodium Processes and Applications6.2.5 Iridium Processes and Applications; 6.3 Titanium; 6.4 Tantalum; 6.5 Aluminum; 6.6 Copper; 6.7 Other Transition Metals; References; 7 Organic and Hybrid Materials; 7.1 Introduction; 7.2 Organic layers; 7.3 Hybrid Organic-inorganic Layers.; 7.4 Applications of Organic and Hybrid Films; References; 8 ALD Applications and Industry; 8.1 Introduction; 8.2 MEMS/NEMS; 8.3 Thin Film Magnetic Heads; 8.4 Coating Nanoparticles, Nanomaterials and Porous Objects; 8.5 Optical Coatings; 8.6 Thin Film Electroluminescent Displays; 8.7 Solar Cells
8.8 Anti-corrosion Layers8.9 Opportunities in Organic Electronics; 8.10 ALD Tool Manufacturers and Coating Providers; References; Index
Record Nr. UNINA-9910827311103321
Kaariainen Tommi  
Hoboken, NJ, : John Wiley & Sons, c2013
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Design von GaN Transistoren für leistungselektronische Anwendungen / / Rimma Zhytnytska
Design von GaN Transistoren für leistungselektronische Anwendungen / / Rimma Zhytnytska
Autore Zhytnytska Rimma
Edizione [1st ed.]
Pubbl/distr/stampa Göttingen : , : Cuvillier Verlag, , [2021]
Descrizione fisica 1 online resource (183 pages)
Disciplina 548.5
Collana Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik
Soggetto topico Epitaxy
ISBN 3-7369-6413-7
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione ger
Nota di contenuto Intro -- 1 Kapitel: Einführung -- 1.1 Motivation -- 1.2 Ziel und Aufbau der Arbeit -- 2 Kapitel: Grundlagen der AlGaN/GaN-HEMTs -- 2.1 Materialeigenschaften von GaN und AlGaN/GaN Heterostruktur -- 2.2 AlGaN/GaN HEMT: Aufbau, Funktion und typische Kennlinien -- 3 Kapitel: Designkonzept für LE-Transistoren -- 3.1 Grundlagen des Designs -- 3.2 Anforderungen an GaN-Transistoren für die Leistungselektronikanwendungen -- 3.3 Designkonzept der GaN-Transistoren für Leistungselektronikanwendungen -- 4 Kapitel: Prozessdetails und Messmethoden -- 4.1 Herstellung der Transistoren und Teststrukturen -- 4.2 Elektrische Charakterisierung -- 5 Kapitel: Design für hohe Spannung -- 5.1 AlGaN/GaN HEMT im gesperrten Zustand -- 5.2 Designoptimierung für hohe Durchbruchfestigkeit -- 5.3 Zusammenfassung des Kapitels 5 -- 6 Kapitel: Design für niedrigen Ron und hohe Stromtragfähigkeit -- 6.1 Thermische Effekte im AlGaN/GaN HEMT -- 6.2 Elektrisch-thermische Charakterisierung des Al- GaN/GaN HEMTs -- 6.3 Designstudie (ANSYS) -- 6.4 Zusammenfassung des Kapitels 6 -- 7 Kapitel: LE-Transistoren - Design und Charakterisierung -- 7.1 Optimiertes Transistordesign -- 7.2 Charakterisierung der LE-Transistoren -- 7.3 Zusammenfassung des Kapitels 7 -- 8 Kapitel: Zusammenfassung und Ausblick -- 8.1 Zusammenfassung und Fazit -- 8.2 Ausblick -- Quellenverweis -- Abbildungsverzeichnis -- Tabellenverzeichnis.
Record Nr. UNINA-9910795244203321
Zhytnytska Rimma  
Göttingen : , : Cuvillier Verlag, , [2021]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Design von GaN Transistoren für leistungselektronische Anwendungen / / Rimma Zhytnytska
Design von GaN Transistoren für leistungselektronische Anwendungen / / Rimma Zhytnytska
Autore Zhytnytska Rimma
Edizione [1st ed.]
Pubbl/distr/stampa Göttingen : , : Cuvillier Verlag, , [2021]
Descrizione fisica 1 online resource (183 pages)
Disciplina 548.5
Collana Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik
Soggetto topico Epitaxy
ISBN 3-7369-6413-7
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione ger
Nota di contenuto Intro -- 1 Kapitel: Einführung -- 1.1 Motivation -- 1.2 Ziel und Aufbau der Arbeit -- 2 Kapitel: Grundlagen der AlGaN/GaN-HEMTs -- 2.1 Materialeigenschaften von GaN und AlGaN/GaN Heterostruktur -- 2.2 AlGaN/GaN HEMT: Aufbau, Funktion und typische Kennlinien -- 3 Kapitel: Designkonzept für LE-Transistoren -- 3.1 Grundlagen des Designs -- 3.2 Anforderungen an GaN-Transistoren für die Leistungselektronikanwendungen -- 3.3 Designkonzept der GaN-Transistoren für Leistungselektronikanwendungen -- 4 Kapitel: Prozessdetails und Messmethoden -- 4.1 Herstellung der Transistoren und Teststrukturen -- 4.2 Elektrische Charakterisierung -- 5 Kapitel: Design für hohe Spannung -- 5.1 AlGaN/GaN HEMT im gesperrten Zustand -- 5.2 Designoptimierung für hohe Durchbruchfestigkeit -- 5.3 Zusammenfassung des Kapitels 5 -- 6 Kapitel: Design für niedrigen Ron und hohe Stromtragfähigkeit -- 6.1 Thermische Effekte im AlGaN/GaN HEMT -- 6.2 Elektrisch-thermische Charakterisierung des Al- GaN/GaN HEMTs -- 6.3 Designstudie (ANSYS) -- 6.4 Zusammenfassung des Kapitels 6 -- 7 Kapitel: LE-Transistoren - Design und Charakterisierung -- 7.1 Optimiertes Transistordesign -- 7.2 Charakterisierung der LE-Transistoren -- 7.3 Zusammenfassung des Kapitels 7 -- 8 Kapitel: Zusammenfassung und Ausblick -- 8.1 Zusammenfassung und Fazit -- 8.2 Ausblick -- Quellenverweis -- Abbildungsverzeichnis -- Tabellenverzeichnis.
Record Nr. UNINA-9910809279803321
Zhytnytska Rimma  
Göttingen : , : Cuvillier Verlag, , [2021]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui