2014 Tenth International Vacuum Electron Sources Conference, IVESC and Second International Conference on Emission Electronics, ICEE : IVESC-ICEE-ICCTPEA-BDO-2014 : Russia, Saint-Petersburg, June 30-July 4, 2014 : proceedings / / edited by: N. V. Egorov |
Pubbl/distr/stampa | IEEE |
Altri autori (Persone) | EgorovN. V (Nikolay V.) |
Soggetto topico |
Electrons - Emission
Vacuum microelectronics Vacuum technology Particle accelerators |
ISBN | 1-4799-5772-0 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Altri titoli varianti |
2014 Tenth International Vacuum Electron Sources Conference
2014 Tenth International Vacuum Electron Sources Conference (IVESC) Vacuum Electron Sources Conference |
Record Nr. | UNISA-996279334803316 |
IEEE | ||
Materiale a stampa | ||
Lo trovi qui: Univ. di Salerno | ||
|
2014 Tenth International Vacuum Electron Sources Conference, IVESC and Second International Conference on Emission Electronics, ICEE : IVESC-ICEE-ICCTPEA-BDO-2014 : Russia, Saint-Petersburg, June 30-July 4, 2014 : proceedings / / edited by: N. V. Egorov |
Pubbl/distr/stampa | IEEE |
Altri autori (Persone) | EgorovN. V (Nikolay V.) |
Soggetto topico |
Electrons - Emission
Vacuum microelectronics Vacuum technology Particle accelerators |
ISBN | 1-4799-5772-0 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Altri titoli varianti |
2014 Tenth International Vacuum Electron Sources Conference
2014 Tenth International Vacuum Electron Sources Conference (IVESC) Vacuum Electron Sources Conference |
Record Nr. | UNINA-9910141897403321 |
IEEE | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
Exoemission from processed solid surfaces and gas adsorption / / Yoshihiro Momose |
Autore | Momose Yoshihiro |
Pubbl/distr/stampa | Gateway East, Singapore : , : Springer, , [2023] |
Descrizione fisica | 1 online resource (238 pages) |
Disciplina | 539.72112 |
Collana | Springer Series in Surface Sciences |
Soggetto topico |
Electrons - Emission
Surfaces (Physics) |
ISBN |
9789811969485
9789811969478 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
Intro -- Preface -- Contents -- Part I Introduction -- 1 Surface Phenomena and Exoemission -- 1.1 Pertinence of Exoemission to Surface Phenomena -- 1.1.1 Involvement in Surface Chemical Technology -- 1.1.2 Work Function and Analysis Methods of Electron Emission -- 1.2 Exoemission Phenomena of Processed Surfaces -- 1.2.1 Importance of Exoemission Studies for Processed Surfaces -- 1.2.2 Historical Background -- 1.3 Exoemission Measurements of Processed Surfaces -- 1.3.1 External Treatments and Terminology of Exoemission -- 1.3.2 Trend of Current Studies -- 1.3.3 Measurement Apparatus and Surface Cleanliness -- 1.3.4 Origin of Exoemission -- References -- Part II EE Mechanism of Metals Subjected to Adsorption -- 2 EE of Clean Metals: Adsorption of Mainly O2 and H2O in the UHV and HV -- 2.1 Specification of Practical Surfaces -- 2.2 Development of Chemiemission -- 2.3 EE Attributable to Adsorption of Electronegative Gases -- 2.3.1 EE During Oxidation of Cs Films Deposited on Ru -- References -- 3 EE from Metal Surfaces Covered with Oxide: Adsorption of Mainly O2 and H2O and Oxide-Film Thickness -- 3.1 OSEE Observed in the UHV and HV for Al2O3/Al -- 3.2 EE Observed in Air for MgO/Mg, Al2O3/Al, and NiO/Ni -- 3.3 EE Observed in Counter Gas for Oxide-Covered Metal Surfaces of Sn, Al, Fe, Ni, and Cu -- References -- 4 Effects of Organic Adsorption, Applied Voltage, Light Irradiation, and Catalytic Activity -- 4.1 Effect of Adsorption on OSEE from Al -- 4.2 Effect of AV and Light Intensity on OSEE from Al -- 4.3 Relation Between EE and Catalytic Activity of Ag, Cu, and Pt -- References -- Part III Outline of Development of EE Research -- 5 Materials, EE Measurement, and EE Characteristics -- 5.1 EE Measurement Methods and EE Data Analysis Methods -- 5.2 Stimulation by Thermal, Optical, and Tribological Methods After Excitation.
5.3 Nomenclature of EE Categorized by Stimulation Methods -- References -- 6 TSEE Related to Plasma Treatment and Adsorption -- 6.1 Outline of TSEE of Metal Surfaces After Plasma Treatment -- 6.2 Effect of Discharge, Adsorption, and Heat Treatment on TSEE from Metals -- 6.2.1 TSEE from Spark-Discharged Fe Surfaces and Adsorption -- 6.2.2 TSEE from Oxidized and Plasma-Treated Ni Surfaces -- 6.2.3 TSEE After Electric Discharge Treatment and Chemical Reduction of Cu Surfaces -- 6.3 TSEE from Glass on Au Surfaces, Au, Ni, Si, and Graphite Subjected to Plasma Exposure -- and XPS Analysis -- 6.3.1 TSEE from Glass Deposited on Au Metal Surfaces -- 6.3.2 TSEE from Au and Ni Metal Surfaces to Exposed to Ar and O2 Plasma -- 6.3.3 TSEE from Ni Metal Surfaces Exposed to Ar and O2 Plasma -- 6.3.4 TSEE from Si Wafer Powder Exposed to Ar Plasma -- 6.3.5 TSEE from Graphite Exposed to CF4, Ar, and O2 Plasma -- References -- 7 Effects of Blasting and Grinding Agents as Well as Cutting Fluids on TSEE from Mechanically Deformed Surfaces -- 7.1 TSEE from Sandblasted Mild Steel and Ground Sand -- 7.1.1 TSEE from Sandblasted Mild Steel and Adsorption of Organic Vapors -- 7.1.2 TSEE from Ground Sand Granules (Aluminosilicate) and Adsorption of Organic Vapors -- 7.2 EE from Metals and Plastics Blasted or Ground with Abrasive Agents -- 7.2.1 TSEE from Metals Blasted with Silicon Carbide (SiC) -- 7.2.2 EE from Plastics Abraded with Al2O3 and SiC -- 7.3 TSEE from Metal Surfaces Subjected to Cutting and Grinding -- 7.3.1 TSEE from Al Surfaces Cut with a Tool Steel and Effect of Cutting Fluids -- 7.3.2 EE from Metals During Cutting with WC and Friction -- 7.3.3 TSEE Under Light Illumination from Low-Carbon Steel Surfaces Ground with Al2O3 -- References -- Part IV TAPE, TPPE, TriboEE, and XPS Characteristics of Processed Surfaces -- 8 TAPE of Rolled and Scratched Fe Metal Surfaces. 8.1 Temperature Dependence of PE from Rolled Fe Surfaces -- 8.2 Wavelength Dependence of PE from Rolled Fe Surfaces -- 8.3 PE from Practical Fe Surfaces Scratched in Air, Water, and Organic Liquids -- 8.3.1 PE in Temperature Scans of Scratched Fe Surfaces and XPS Analysis -- 8.3.2 Activation Energy of PE from Scratched Fe Surfaces -- 8.3.3 PE in Wavelength Scans of Scratched Fe Surfaces -- 8.4 Temperature Analysis of PE and XPS Data of Scratched Fe Surfaces -- References -- 9 TAPE of Si Wafers -- 9.1 Effect of Adsorption of O2 and H2O on EE from Si -- 9.2 PE from Si Wafers and Activation Energy -- 9.3 PE from Si Wafer Surfaces Implanted with H, Si, and Ar Ions -- References -- 10 TPPE Characteristics of Various Metal Surfaces -- 10.1 Outline of TPPE for Metal Surface Analysis -- 10.2 TPPE Characteristics and XPS Analysis -- 10.2.1 Temperature Dependence of PE Total Count -- 10.2.2 XPS Characteristics -- 10.2.3 TPPE Characteristics and Gas Adsorption Properties -- 10.3 TPPE Characteristics of Metals and Surface Pretreatment Methods -- References -- 11 TriboEE Occurring from Metal Surfaces During Sliding Contact with a Polymer Rod -- 11.1 Outline of TriboEE from Metal Surfaces -- 11.1.1 Electron Emission During Sliding Contact Between Metals and Polymers -- 11.1.2 Effect of Surface Pretreatments of Metals on TriboEE -- 11.1.3 Effect on TriboEE of Plasma-Polymerized Films Formed on Metal Surfaces -- 11.2 Dependence of TriboEE Intensity on Elemental Metals -- 11.2.1 TriboEE Intensity of Elemental Metals -- 11.2.2 Relationship of TriboEE Intensity of Metal Surfaces to the Work Function and Surface Potential -- 11.2.3 TriboEE from Metal Surfaces Covered with an Oxide Film and Its Relationship to the Heat of Formation of Metal Oxides -- References. 12 Relationship of the EE Intensity of Metal Surfaces to Their Chemical Activity and Electrostatic Attractive Force -- 12.1 Application of TPPE to Cu Surfaces -- 12.1.1 Electrochemical Reduction of CO2 on Cu Electrodes and TPPE -- 12.1.2 TPPE Characteristics of Cu Subjected to Cleaning and Abrasion in Air, Water, and Alcohols -- 12.2 Corrosion Protection of Al Surfaces by Plasma-Polymerized Coatings and TPPE -- 12.3 Corrosion Protection of Fe, Ni, and Cu Metal Surfaces by Plasma-Polymerized Coatings, and Its Relationship to the Electronic Properties of Metals -- 12.3.1 Effect of TPPE on Electrostatic Attractive Force Between Metals, Semiconductors, and Tribocharged Polymers -- References -- Index. |
Record Nr. | UNINA-9910632484603321 |
Momose Yoshihiro | ||
Gateway East, Singapore : , : Springer, , [2023] | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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IVESC2004 : the 5th International Vacuum Electron Sources Conference : proceedings : September 6-10, 2004, the Media Center Hotel, Beijing, China |
Pubbl/distr/stampa | [Place of publication not identified], : IEEE, 2004 |
Disciplina | 539.7/2112 |
Soggetto topico |
Electrons - Emission
Solids - Surfaces Vacuum technology Nuclear Physics Physics Physical Sciences & Mathematics |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNISA-996202114503316 |
[Place of publication not identified], : IEEE, 2004 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. di Salerno | ||
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Quantum tunneling and field electron emission theories / / Shi-Dong Liang ; in-house editor, Song Yu |
Autore | Liang Shi-Dong |
Pubbl/distr/stampa | Singapore : , : World Scientific Publishing, , 2014 |
Descrizione fisica | 1 online resource (408 p.) |
Disciplina | 530.4/16 |
Soggetto topico |
Tunneling (Physics)
Quantum theory Electrons - Emission |
Soggetto genere / forma | Electronic books. |
ISBN | 981-4440-22-1 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
Preface; Contents; 1. Introduction; Quantum Tunneling Theory; 2. Quantum Physics and Quantum Formalism; 2.1 Quantum Phenomena; 2.2 Quantum Characteristics; 2.3 Quantum Formalism; 2.4 Probability Current and Current Conservation; 2.5 Quantum Physics versus Classical Physics; 2.6 Mesoscopic Physics and Characteristic Length; 2.6.1 Characteristic Length; 2.6.2 Characteristic Transports; 2.7 Mathematics in Classical and Quantum Worlds; 3. Basic Physics of Quantum Scattering and Tunneling; 3.1 Definitions of Quantum Scattering and Tunneling; 3.2 Description of Quantum Scattering and Tunneling
3.3 Basic Physical Quantities in Quantum Tunneling3.3.1 Transmission and Reflection Coefficients; 3.3.2 Conductance: Landauer-Buttiker Formula; 3.3.3 Charge Current; 3.4 Relationships between Transmission Coefficient and Scattering Matrix; 3.5 Basic Properties of Scattering and Transfer Matrices; 3.6 Constraints of Scattering and Transfer Matrices; 4. Wave Function Matching Method; 4.1 Square Barrier Model; 4.2 Asymmetric Square Barrier Model; 4.3 Double Square Barrier Model; 4.4 Multi-Mode Square Barrier Model; 4.5 Triangle Barrier; 4.6 Lattice Models; 4.6.1 One-dimensional Model 4.6.2 Two-chain Model4.6.3 2D Square Lattice; 5. WKB Method; 5.1 Mathematics of WKB Method; 5.2 Validity; 5.3 Solution of Schrodinger Equation; 5.4 Quantum Tunneling; 5.5 Triangle Barrier; 5.6 Triangle and Image Potential Barrier; 6. Lippmann-Schwinger Formalism; 6.1 Lippmann-Schwinger Equation; 6.2 Wave Function and S Matrix; 6.3 Green's Function and T Matrix; 6.4 S Matrix; 6.5 Adiabatic Transport Model; 6.6 Quantum Tunneling in Time-Dependent Barrier; 6.6.1 Floquet Theory; 6.6.2 Time-Dependent Barrier; 7. Non-Equilibrium Green's Function Method 7.1 Basic Physics of Non-Equilibrium Transport Problems7.2 Model of Nanodevices; 7.3 Green's Functions and Self-Energy; 7.4 Spectral Function, Density of States, and Correlation Function; 7.5 Definitions and Relationships; 7.6 Current; 7.7 Tunneling Model and Master Equation; 8. Spin Tunneling; 8.1 Tunneling Magnetoresistance Phenomena; 8.2 Julliere Model; 8.3 Giant Magnetoresistance; 8.4 Spin Tunneling in Spin-Orbital Coupling Semiconductors; 8.4.1 Model and Issue; 8.4.2 Ferromagnetic Nanowires; 8.4.3 Spin-Orbital Coupling Semiconductor; 8.5 Spin Polarization; 8.6 Remarks; 9. Applications 9.1 Josephson Effect9.2 Theory of Scanning Tunneling Microscopy; 9.2.1 Quantum Electron Tunneling and Bardeen's Formula; 9.2.2 Tersoff-Hamann Formula; 9.2.3 Non-Equilibrium Green's Function Method; 9.3 Conductance of Graphene; 9.3.1 Graphene Nanoribbons Model; 9.3.2 Impurity Effects; 9.3.3 Vacancy and Impurity; 9.3.4 Conclusion; 9.4 Charge Transfer in DNA; 9.4.1 G4-DNA Model; 9.4.2 TG4 and Their Classifications; 9.4.3 Anomalous Conductance in NCM(H)TG4; 9.4.4 Topological Structure Transition versus Telomerase Activation and Inhibition; 9.4.5 Conclusion; 9.5 Remarks Field Electron Emission Theory |
Record Nr. | UNINA-9910464500203321 |
Liang Shi-Dong | ||
Singapore : , : World Scientific Publishing, , 2014 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
Quantum tunneling and field electron emission theories / / Shi-Dong Liang, Sun Yat-Sen University, China |
Autore | Liang Shi-Dong |
Pubbl/distr/stampa | New Jersey : , : World Scientific, , [2014] |
Descrizione fisica | 1 online resource (xx, 387 pages) : illustrations (some color) |
Disciplina | 530.4/16 |
Collana | Gale eBooks |
Soggetto topico |
Tunneling (Physics)
Quantum theory Electrons - Emission |
ISBN | 981-4440-22-1 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
Preface; Contents; 1. Introduction; Quantum Tunneling Theory; 2. Quantum Physics and Quantum Formalism; 2.1 Quantum Phenomena; 2.2 Quantum Characteristics; 2.3 Quantum Formalism; 2.4 Probability Current and Current Conservation; 2.5 Quantum Physics versus Classical Physics; 2.6 Mesoscopic Physics and Characteristic Length; 2.6.1 Characteristic Length; 2.6.2 Characteristic Transports; 2.7 Mathematics in Classical and Quantum Worlds; 3. Basic Physics of Quantum Scattering and Tunneling; 3.1 Definitions of Quantum Scattering and Tunneling; 3.2 Description of Quantum Scattering and Tunneling
3.3 Basic Physical Quantities in Quantum Tunneling3.3.1 Transmission and Reflection Coefficients; 3.3.2 Conductance: Landauer-Buttiker Formula; 3.3.3 Charge Current; 3.4 Relationships between Transmission Coefficient and Scattering Matrix; 3.5 Basic Properties of Scattering and Transfer Matrices; 3.6 Constraints of Scattering and Transfer Matrices; 4. Wave Function Matching Method; 4.1 Square Barrier Model; 4.2 Asymmetric Square Barrier Model; 4.3 Double Square Barrier Model; 4.4 Multi-Mode Square Barrier Model; 4.5 Triangle Barrier; 4.6 Lattice Models; 4.6.1 One-dimensional Model 4.6.2 Two-chain Model4.6.3 2D Square Lattice; 5. WKB Method; 5.1 Mathematics of WKB Method; 5.2 Validity; 5.3 Solution of Schrodinger Equation; 5.4 Quantum Tunneling; 5.5 Triangle Barrier; 5.6 Triangle and Image Potential Barrier; 6. Lippmann-Schwinger Formalism; 6.1 Lippmann-Schwinger Equation; 6.2 Wave Function and S Matrix; 6.3 Green's Function and T Matrix; 6.4 S Matrix; 6.5 Adiabatic Transport Model; 6.6 Quantum Tunneling in Time-Dependent Barrier; 6.6.1 Floquet Theory; 6.6.2 Time-Dependent Barrier; 7. Non-Equilibrium Green's Function Method 7.1 Basic Physics of Non-Equilibrium Transport Problems7.2 Model of Nanodevices; 7.3 Green's Functions and Self-Energy; 7.4 Spectral Function, Density of States, and Correlation Function; 7.5 Definitions and Relationships; 7.6 Current; 7.7 Tunneling Model and Master Equation; 8. Spin Tunneling; 8.1 Tunneling Magnetoresistance Phenomena; 8.2 Julliere Model; 8.3 Giant Magnetoresistance; 8.4 Spin Tunneling in Spin-Orbital Coupling Semiconductors; 8.4.1 Model and Issue; 8.4.2 Ferromagnetic Nanowires; 8.4.3 Spin-Orbital Coupling Semiconductor; 8.5 Spin Polarization; 8.6 Remarks; 9. Applications 9.1 Josephson Effect9.2 Theory of Scanning Tunneling Microscopy; 9.2.1 Quantum Electron Tunneling and Bardeen's Formula; 9.2.2 Tersoff-Hamann Formula; 9.2.3 Non-Equilibrium Green's Function Method; 9.3 Conductance of Graphene; 9.3.1 Graphene Nanoribbons Model; 9.3.2 Impurity Effects; 9.3.3 Vacancy and Impurity; 9.3.4 Conclusion; 9.4 Charge Transfer in DNA; 9.4.1 G4-DNA Model; 9.4.2 TG4 and Their Classifications; 9.4.3 Anomalous Conductance in NCM(H)TG4; 9.4.4 Topological Structure Transition versus Telomerase Activation and Inhibition; 9.4.5 Conclusion; 9.5 Remarks Field Electron Emission Theory |
Record Nr. | UNINA-9910789377203321 |
Liang Shi-Dong | ||
New Jersey : , : World Scientific, , [2014] | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
Quantum tunneling and field electron emission theories / / Shi-Dong Liang, Sun Yat-Sen University, China |
Autore | Liang Shi-Dong |
Pubbl/distr/stampa | New Jersey : , : World Scientific, , [2014] |
Descrizione fisica | 1 online resource (xx, 387 pages) : illustrations (some color) |
Disciplina | 530.4/16 |
Collana | Gale eBooks |
Soggetto topico |
Tunneling (Physics)
Quantum theory Electrons - Emission |
ISBN | 981-4440-22-1 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
Preface; Contents; 1. Introduction; Quantum Tunneling Theory; 2. Quantum Physics and Quantum Formalism; 2.1 Quantum Phenomena; 2.2 Quantum Characteristics; 2.3 Quantum Formalism; 2.4 Probability Current and Current Conservation; 2.5 Quantum Physics versus Classical Physics; 2.6 Mesoscopic Physics and Characteristic Length; 2.6.1 Characteristic Length; 2.6.2 Characteristic Transports; 2.7 Mathematics in Classical and Quantum Worlds; 3. Basic Physics of Quantum Scattering and Tunneling; 3.1 Definitions of Quantum Scattering and Tunneling; 3.2 Description of Quantum Scattering and Tunneling
3.3 Basic Physical Quantities in Quantum Tunneling3.3.1 Transmission and Reflection Coefficients; 3.3.2 Conductance: Landauer-Buttiker Formula; 3.3.3 Charge Current; 3.4 Relationships between Transmission Coefficient and Scattering Matrix; 3.5 Basic Properties of Scattering and Transfer Matrices; 3.6 Constraints of Scattering and Transfer Matrices; 4. Wave Function Matching Method; 4.1 Square Barrier Model; 4.2 Asymmetric Square Barrier Model; 4.3 Double Square Barrier Model; 4.4 Multi-Mode Square Barrier Model; 4.5 Triangle Barrier; 4.6 Lattice Models; 4.6.1 One-dimensional Model 4.6.2 Two-chain Model4.6.3 2D Square Lattice; 5. WKB Method; 5.1 Mathematics of WKB Method; 5.2 Validity; 5.3 Solution of Schrodinger Equation; 5.4 Quantum Tunneling; 5.5 Triangle Barrier; 5.6 Triangle and Image Potential Barrier; 6. Lippmann-Schwinger Formalism; 6.1 Lippmann-Schwinger Equation; 6.2 Wave Function and S Matrix; 6.3 Green's Function and T Matrix; 6.4 S Matrix; 6.5 Adiabatic Transport Model; 6.6 Quantum Tunneling in Time-Dependent Barrier; 6.6.1 Floquet Theory; 6.6.2 Time-Dependent Barrier; 7. Non-Equilibrium Green's Function Method 7.1 Basic Physics of Non-Equilibrium Transport Problems7.2 Model of Nanodevices; 7.3 Green's Functions and Self-Energy; 7.4 Spectral Function, Density of States, and Correlation Function; 7.5 Definitions and Relationships; 7.6 Current; 7.7 Tunneling Model and Master Equation; 8. Spin Tunneling; 8.1 Tunneling Magnetoresistance Phenomena; 8.2 Julliere Model; 8.3 Giant Magnetoresistance; 8.4 Spin Tunneling in Spin-Orbital Coupling Semiconductors; 8.4.1 Model and Issue; 8.4.2 Ferromagnetic Nanowires; 8.4.3 Spin-Orbital Coupling Semiconductor; 8.5 Spin Polarization; 8.6 Remarks; 9. Applications 9.1 Josephson Effect9.2 Theory of Scanning Tunneling Microscopy; 9.2.1 Quantum Electron Tunneling and Bardeen's Formula; 9.2.2 Tersoff-Hamann Formula; 9.2.3 Non-Equilibrium Green's Function Method; 9.3 Conductance of Graphene; 9.3.1 Graphene Nanoribbons Model; 9.3.2 Impurity Effects; 9.3.3 Vacancy and Impurity; 9.3.4 Conclusion; 9.4 Charge Transfer in DNA; 9.4.1 G4-DNA Model; 9.4.2 TG4 and Their Classifications; 9.4.3 Anomalous Conductance in NCM(H)TG4; 9.4.4 Topological Structure Transition versus Telomerase Activation and Inhibition; 9.4.5 Conclusion; 9.5 Remarks Field Electron Emission Theory |
Record Nr. | UNINA-9910815913603321 |
Liang Shi-Dong | ||
New Jersey : , : World Scientific, , [2014] | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
Theoretical treatment of electron emission and related phenomena / / Benjamin Seznec [and four others] |
Autore | Seznec Benjamin |
Pubbl/distr/stampa | Cham, Switzerland : , : Springer, , [2022] |
Descrizione fisica | 1 online resource (226 pages) |
Disciplina | 539.72112 |
Soggetto topico | Electrons - Emission |
ISBN | 3-030-98419-2 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910578689803321 |
Seznec Benjamin | ||
Cham, Switzerland : , : Springer, , [2022] | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
Theoretical treatment of electron emission and related phenomena / / Benjamin Seznec [and four others] |
Autore | Seznec Benjamin |
Pubbl/distr/stampa | Cham, Switzerland : , : Springer, , [2022] |
Descrizione fisica | 1 online resource (226 pages) |
Disciplina | 539.72112 |
Soggetto topico | Electrons - Emission |
ISBN | 3-030-98419-2 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNISA-996478858803316 |
Seznec Benjamin | ||
Cham, Switzerland : , : Springer, , [2022] | ||
Materiale a stampa | ||
Lo trovi qui: Univ. di Salerno | ||
|
Vacuum nanoelectronic devices : novel electron sources and applications / / Anatoliy Evtukh [and four others] |
Pubbl/distr/stampa | West Sussex, England : , : Wiley, , 2015 |
Descrizione fisica | 1 online resource (1140 p.) |
Disciplina | 621.3815 |
Soggetto topico |
Vacuum microelectronics
Electrons - Emission Quantum electronics Tunneling (Physics) |
ISBN |
1-119-03796-4
1-119-03797-2 1-119-03798-0 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
""Cover""; ""Table of Contents""; ""Title Page""; ""Copyright""; ""Preface""; ""Part One: Theoretical Backgrounds of Quantum Electron Sources""; ""Chapter 1: Transport through the Energy Barriers: Transition Probability""; ""1.1 Transfer Matrix Technique""; ""1.2 Tunneling through the Barriers and Wells""; ""1.3 Tunneling through Triangular Barrier at Electron Field Emission""; ""1.4 Effect of Trapped Charge in the Barrier""; ""1.5 Transmission Probability in Resonant Tunneling Structures: Coherent Tunneling""; ""1.6 Lorentzian Approximation""; ""1.7 Time Parameters of Resonant Tunneling""
""1.8 Transmission Probability at Electric Fields""""1.9 Temperature Effects""; ""References""; ""Chapter 2: Supply Function""; ""2.1 Effective Mass Approximation""; ""2.2 Electron in Potential Box""; ""2.3 Density of States""; ""2.4 Fermi Distribution Function and Electron Concentration""; ""2.5 Supply Function at Electron Field Emission""; ""2.6 Electron in Potential Well""; ""2.7 Two-Dimensional Electron Gas in Heterojunction GaN-AlGaN""; ""2.8 Electron Properties of Quantum-Size Semiconductor Films""; ""References""; ""Chapter 3: Band Bending and Work Function"" ""3.1 Surface Space-Charge Region""""3.2 Quantization of the Energy Spectrum of Electrons in Surface Semiconductor Layer""; ""3.3 Image Charge Potential""; ""3.4 Work Function""; ""3.5 Field and Temperature Dependences of Barrier Height""; ""3.6 Influence of Surface Adatoms on Work Function""; ""References""; ""Chapter 4: Current through the Barrier Structures""; ""4.1 Current through One Barrier Structure""; ""4.2 Field Emission Current""; ""4.3 Electron Field Emission from Semiconductors""; ""4.4 Current through Double Barrier Structures"" ""4.5 Electron Field Emission from Multilayer Nanostructures and Nanoparticles""""References""; ""Chapter 5: Electron Energy Distribution""; ""5.1 Theory of Electron Energy Distribution""; ""5.2 Experimental Set Up""; ""5.3 Peculiarities of Electron Energy Distribution Spectra at Emission from Semiconductors""; ""5.4 Electron Energy Distribution at Emission from Spindt-Type Metal Microtips""; ""5.5 Electron Energy Distribution of Electrons Emitter from Silicon""; ""References""; ""Part Two: Novel Electron Sources with Quantum Effects""; ""Chapter 6: Si Based Quantum Cathodes"" ""6.1 Introduction""""6.2 Electron Field Emission from Porous Silicon""; ""6.3 Electron Field Emission from Silicon with Multilayer Coating""; ""6.4 Peculiarities of Electron Field Emission from Si Nanoparticles""; ""6.5 Formation of Conducting Channels in SiOx Coating Film""; ""6.6 Electron Field Emission from Si Nanowires""; ""6.7 Metal-Insulator-Metal Emitters""; ""6.8 Conclusion""; ""References""; ""Chapter 7: GaN Based Quantum Cathodes""; ""7.1 Introduction""; ""7.2 Electron Sources with Wide Bandgap Semiconductor Films"" ""7.3 Resonant Tunneling of Field Emitted Electrons through Nanostructured Cathodes"" |
Record Nr. | UNINA-9910131582603321 |
West Sussex, England : , : Wiley, , 2015 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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