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Biblioteca

MARC Lista (tabellare)
Advanced topological insulators / / edited by Huixia Luo, School of Materials Science and Engineering, Sun Yat-Sen University, China
Advanced topological insulators / / edited by Huixia Luo, School of Materials Science and Engineering, Sun Yat-Sen University, China
Pubbl/distr/stampa Wiley-Scrivener
Disciplina 621.3815/4
Soggetto topico Topological insulators
Superconductors
Dielectrics
Solid state physics
Electronic apparatus and appliances - Materials
ISBN 1-119-40733-8
1-119-40731-1
1-119-40732-X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910830546903321
Wiley-Scrivener
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Advanced topological insulators / / edited by Huixia Luo, School of Materials Science and Engineering, Sun Yat-Sen University, China
Advanced topological insulators / / edited by Huixia Luo, School of Materials Science and Engineering, Sun Yat-Sen University, China
Pubbl/distr/stampa Wiley-Scrivener
Disciplina 621.3815/4
Soggetto topico Topological insulators
Superconductors
Dielectrics
Solid state physics
Electronic apparatus and appliances - Materials
ISBN 1-119-40733-8
1-119-40731-1
1-119-40732-X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910841047903321
Wiley-Scrivener
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Electrical characterization of organic electronic materials and devices [[electronic resource] /] / Peter Stallinga
Electrical characterization of organic electronic materials and devices [[electronic resource] /] / Peter Stallinga
Autore Stallinga Peter <1966->
Pubbl/distr/stampa Hoboken, NJ, : John Wiley & Sons, 2009
Descrizione fisica 1 online resource (317 p.)
Disciplina 621.381
Soggetto topico Electronics - Materials
Organic electronics
Organic semiconductors
Electronic apparatus and appliances - Materials
ISBN 1-282-31679-6
9786612316791
0-470-75016-2
0-470-75017-0
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Electrical Characterization of Organic Electronic Materials and Devices; Contents; Preface; 1 General concepts; 1.1 Introduction; 1.2 Conduction mechanism; 1.3 Chemistry and the energy diagram; 1.3.1 Energy diagram of crystalline materials; 1.3.2 Energy diagram of amorphous materials; 1.4 Disordered materials and the Meyer-Neldel Rule; 1.5 Devices; 1.5.1 Resistor; 1.5.2 Schottky diode; 1.5.3 MIS diode and MIS tunnel diode; 1.5.4 Thin-film transistor; 1.6 Optoelectronics/photovoltaics; 2 Two-terminal devices: DC current; 2.1 Conductance; 2.1.1 Ohmic conduction; 2.1.2 Poole-Frenkel
2.1.3 Tunneling2.1.4 Space-charge-limited current; 2.1.5 Granular materials; grain boundaries; 2.2 DC current of a Schottky barrier; 2.2.1 High-current regime; 2.2.2 Displacement current; 2.3 DC measurements; 2.3.1 van der Pauw; 2.3.2 Hall effect; 3 Two-terminal devices: Admittance spectroscopy; 3.1 Admittance spectroscopy; 3.1.1 Low-frequency RCL bridge; 3.1.2 DC admittance; 3.2 Geometrical capacitance; 3.3 Equivalent circuits; 3.4 Resistor; SCLC; 3.5 Schottky diodes; 3.5.1 Schottky diode; nonuniform doping; 3.5.2 Schottky diode; adding an abundant deep acceptor level
3.5.3 Schottky diode minority levels; 3.5.4 Schottky barrier; temperature dependence; 3.6 MIS diodes; 3.6.1 MIS of doped semiconductors; 3.6.2 MIS with interface states; 3.6.3 MIS of low-mobility semiconductors; 3.7 MIS tunnel diode; 3.8 Noise measurements; 4 Two-terminal devices: Transient techniques; 4.1 Kinetics: Emission and capture of carriers; 4.1.1 Emission and capture in organic materials; 4.2 Current transient spectroscopy; 4.2.1 Example of an emission experiment; 4.2.2 Example of a capture experiment; 4.3 Thermally stimulated current; 4.4 Capacitance transient spectroscopy
4.4.1 Case study: Example of a capacitance transient measurement4.5 Deep-level transient spectroscopy; 4.6 Q-DLTS; 5 Time-of-flight; 5.1 Introduction; 5.2 Drift transient; 5.3 Diffusive transient; 5.4 Violating Einstein's Relation; 5.5 Multi-trap-and-release; 5.6 Anomalous transients; 5.7 High current (space charge) transients; 5.8 Summary of the ToF technique; 6 Thin-film transistors; 6.1 Field-effect transistors; 6.2 MOS-FET; 6.2.1 MOS-FET threshold voltage; 6.2.2 MOS-FET current; 6.2.3 Exact solution; 6.2.4 MOS-FET subthreshold current and subthreshold swing; 6.3 Introducing TFTs
6.4 Basic model6.4.1 Threshold voltage and subthreshold current; 6.5 Justification for the two-dimensional approach; 6.6 Ambipolar materials and devices; 6.7 Contact effects and other simple nonidealities; 6.7.1 Insulator leakage; 6.7.2 Contact resistance; 6.7.3 Contact barriers; 6.7.4 Grain boundaries; 6.7.5 Parallel conductance; 6.8 Metallic contacts in TFTs; 6.9 Normally-on TFTs; 6.9.1 Narrow gap semiconductors; 6.9.2 Thick TFTs; 6.9.3 Doped semiconductors and inversion-channel TFT; 6.9.4 Metal-insulator-metal TFT; 6.10 Effects of traps; 6.10.1 Traps and threshold voltage
6.10.2 Traps and output curves
Record Nr. UNINA-9910139545903321
Stallinga Peter <1966->  
Hoboken, NJ, : John Wiley & Sons, 2009
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Electrical characterization of organic electronic materials and devices [[electronic resource] /] / Peter Stallinga
Electrical characterization of organic electronic materials and devices [[electronic resource] /] / Peter Stallinga
Autore Stallinga Peter <1966->
Pubbl/distr/stampa Hoboken, NJ, : John Wiley & Sons, 2009
Descrizione fisica 1 online resource (317 p.)
Disciplina 621.381
Soggetto topico Electronics - Materials
Organic electronics
Organic semiconductors
Electronic apparatus and appliances - Materials
ISBN 1-282-31679-6
9786612316791
0-470-75016-2
0-470-75017-0
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Electrical Characterization of Organic Electronic Materials and Devices; Contents; Preface; 1 General concepts; 1.1 Introduction; 1.2 Conduction mechanism; 1.3 Chemistry and the energy diagram; 1.3.1 Energy diagram of crystalline materials; 1.3.2 Energy diagram of amorphous materials; 1.4 Disordered materials and the Meyer-Neldel Rule; 1.5 Devices; 1.5.1 Resistor; 1.5.2 Schottky diode; 1.5.3 MIS diode and MIS tunnel diode; 1.5.4 Thin-film transistor; 1.6 Optoelectronics/photovoltaics; 2 Two-terminal devices: DC current; 2.1 Conductance; 2.1.1 Ohmic conduction; 2.1.2 Poole-Frenkel
2.1.3 Tunneling2.1.4 Space-charge-limited current; 2.1.5 Granular materials; grain boundaries; 2.2 DC current of a Schottky barrier; 2.2.1 High-current regime; 2.2.2 Displacement current; 2.3 DC measurements; 2.3.1 van der Pauw; 2.3.2 Hall effect; 3 Two-terminal devices: Admittance spectroscopy; 3.1 Admittance spectroscopy; 3.1.1 Low-frequency RCL bridge; 3.1.2 DC admittance; 3.2 Geometrical capacitance; 3.3 Equivalent circuits; 3.4 Resistor; SCLC; 3.5 Schottky diodes; 3.5.1 Schottky diode; nonuniform doping; 3.5.2 Schottky diode; adding an abundant deep acceptor level
3.5.3 Schottky diode minority levels; 3.5.4 Schottky barrier; temperature dependence; 3.6 MIS diodes; 3.6.1 MIS of doped semiconductors; 3.6.2 MIS with interface states; 3.6.3 MIS of low-mobility semiconductors; 3.7 MIS tunnel diode; 3.8 Noise measurements; 4 Two-terminal devices: Transient techniques; 4.1 Kinetics: Emission and capture of carriers; 4.1.1 Emission and capture in organic materials; 4.2 Current transient spectroscopy; 4.2.1 Example of an emission experiment; 4.2.2 Example of a capture experiment; 4.3 Thermally stimulated current; 4.4 Capacitance transient spectroscopy
4.4.1 Case study: Example of a capacitance transient measurement4.5 Deep-level transient spectroscopy; 4.6 Q-DLTS; 5 Time-of-flight; 5.1 Introduction; 5.2 Drift transient; 5.3 Diffusive transient; 5.4 Violating Einstein's Relation; 5.5 Multi-trap-and-release; 5.6 Anomalous transients; 5.7 High current (space charge) transients; 5.8 Summary of the ToF technique; 6 Thin-film transistors; 6.1 Field-effect transistors; 6.2 MOS-FET; 6.2.1 MOS-FET threshold voltage; 6.2.2 MOS-FET current; 6.2.3 Exact solution; 6.2.4 MOS-FET subthreshold current and subthreshold swing; 6.3 Introducing TFTs
6.4 Basic model6.4.1 Threshold voltage and subthreshold current; 6.5 Justification for the two-dimensional approach; 6.6 Ambipolar materials and devices; 6.7 Contact effects and other simple nonidealities; 6.7.1 Insulator leakage; 6.7.2 Contact resistance; 6.7.3 Contact barriers; 6.7.4 Grain boundaries; 6.7.5 Parallel conductance; 6.8 Metallic contacts in TFTs; 6.9 Normally-on TFTs; 6.9.1 Narrow gap semiconductors; 6.9.2 Thick TFTs; 6.9.3 Doped semiconductors and inversion-channel TFT; 6.9.4 Metal-insulator-metal TFT; 6.10 Effects of traps; 6.10.1 Traps and threshold voltage
6.10.2 Traps and output curves
Record Nr. UNINA-9910816874403321
Stallinga Peter <1966->  
Hoboken, NJ, : John Wiley & Sons, 2009
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Electrochemical and solid-state letters
Electrochemical and solid-state letters
Pubbl/distr/stampa Pennington, NJ, : Electrochemical Society, ©1998-©2012
Disciplina 541
Soggetto topico Electronic apparatus and appliances - Materials
Solid state electronics
Electrochemistry
Soggetto genere / forma Periodicals.
ISSN 1944-8775
Formato Materiale a stampa
Livello bibliografico Periodico
Lingua di pubblicazione eng
Altri titoli varianti Letters
Record Nr. UNINA-9910411649403321
Pennington, NJ, : Electrochemical Society, ©1998-©2012
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Electronic materials science [[electronic resource] /] / Eugene A. Irene
Electronic materials science [[electronic resource] /] / Eugene A. Irene
Autore Irene Eugene A
Pubbl/distr/stampa Hoboken, N.J., : Wiley-Interscience, c2005
Descrizione fisica 1 online resource (322 p.)
Disciplina 621.381
Soggetto topico Electronics - Materials
Electronic apparatus and appliances - Materials
ISBN 1-280-25481-5
9786610254811
0-470-32412-0
0-471-71164-0
0-471-71163-2
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto ELECTRONIC MATERIALS SCIENCE; CONTENTS; Preface; 1 Introduction to Electronic Materials Science; 1.1 Introduction; 1.2 Structure and Diffraction; 1.3 Defects; 1.4 Diffusion; 1.5 Phase Equilibria; 1.6 Mechanical Properties; 1.7 Electronic Structure; 1.8 Electronic Properties and Devices; 1.9 Electronic Materials Science; 2 Structure of Solids; 2.1 Introduction; 2.2 Order; 2.3 The Lattice; 2.4 Crystal Structure; 2.5 Notation; 2.5.1 Naming Planes; 2.5.2 Lattice Directions; 2.6 Lattice Geometry; 2.6.1 Planar Spacing Formulas; 2.6.2 Close Packing; 2.7 The Wigner-Seitz Cell; 2.8 Crystal Structures
2.8.1 Structures for Elements2.8.2 Structures for Compounds; 2.8.3 Solid Solutions; Related Reading; Exercises; 3 Diffraction; 3.1 Introduction; 3.2 Phase Difference and Bragg's Law; 3.3 The Scattering Problem; 3.3.1 Coherent Scattering from an Electron; 3.3.2 Coherent Scattering from an Atom; 3.3.3 Coherent Scattering from a Unit Cell; 3.3.4 Structure Factor Calculations; 3.4 Reciprocal Space, RESP; 3.4.1 Why Reciprocal Space?; 3.4.2 Definition of RESP; 3.4.3 Definition of Reciprocal Lattice Vector; 3.4.4 The Ewald Construction; 3.5 Diffraction Techniques; 3.5.1 Rotating Crystal Method
3.5.2 Powder Method3.5.3 Laue Method; 3.6 Wave Vector Representation; Related Reading; Exercises; 4 Defects in Solids; 4.1 Introduction; 4.2 Why Do Defects Form?; 4.2.1 Review of Some Thermodynamics Ideas; 4.3 Point Defects; 4.4 The Statistics of Point Defects; 4.5 Line Defects-Dislocations; 4.5.1 Edge Dislocations; 4.5.2 Screw Dislocations; 4.5.3 Burger's Vector and the Burger Circuit; 4.5.4 Dislocation Motion; 4.6 Planar Defects; 4.6.1 Grain Boundaries; 4.6.2 Twin Boundaries; 4.7 Three-Dimensional Defects; Related Reading; Exercises; 5 Diffusion in Solids
5.1 Introduction to Diffusion Equations5.2 Atomistic Theory of Diffusion: Fick's Laws and a Theory for the Diffussion Construct D; 5.3 Random Walk Problem; 5.3.1 Random Walk Calculations; 5.3.2 Relation of D to Random Walk; 5.3.3 Self-Diffusion Vacancy Mechanism in a FCC Crystal; 5.3.4 Activation Energy for Diffusion; 5.4 Other Mass Transport Mechanisms; 5.4.1 Permeability versus Diffusion; 5.4.2 Convection versus Diffusion; 5.5 Mathematics of Diffusion; 5.5.1 Steady State Diffusion-Fick's First Law; 5.5.2 Non-Steady State Diffusion-Fick's Second Law; Related Reading; Exercises
6 Phase Equilibria6.1 Introduction; 6.2 The Gibbs Phase Rule; 6.2.1 Definitions; 6.2.2 Equilibrium Among Phases-The Phase Rule; 6.2.3 Applications of the Phase Rule; 6.2.4 Construction of Phase Diagrams: Theory and Experiment; 6.2.5 The Tie Line Principle; 6.2.6 The Lever Rule; 6.2.7 Examples of Phase Equilibria; 6.3 Nucleation and Growth of Phases; 6.3.1 Thermodynamics of Phase Transformations; 6.3.2 Nucleation; Related Reading; Exercises; 7 Mechanical Properties of Solids-Elasticity; 7.1 Introduction; 7.2 Elasticity Relationships; 7.2.1 True versus Engineering Strain
7.2.2 Nature of Elasticity and Young's Modulus
Record Nr. UNINA-9910143560503321
Irene Eugene A  
Hoboken, N.J., : Wiley-Interscience, c2005
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Electronic materials science [[electronic resource] /] / Eugene A. Irene
Electronic materials science [[electronic resource] /] / Eugene A. Irene
Autore Irene Eugene A
Edizione [1st ed.]
Pubbl/distr/stampa Hoboken, N.J., : Wiley-Interscience, c2005
Descrizione fisica 1 online resource (322 p.)
Disciplina 621.381
Soggetto topico Electronics - Materials
Electronic apparatus and appliances - Materials
ISBN 1-280-25481-5
9786610254811
0-470-32412-0
0-471-71164-0
0-471-71163-2
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto ELECTRONIC MATERIALS SCIENCE; CONTENTS; Preface; 1 Introduction to Electronic Materials Science; 1.1 Introduction; 1.2 Structure and Diffraction; 1.3 Defects; 1.4 Diffusion; 1.5 Phase Equilibria; 1.6 Mechanical Properties; 1.7 Electronic Structure; 1.8 Electronic Properties and Devices; 1.9 Electronic Materials Science; 2 Structure of Solids; 2.1 Introduction; 2.2 Order; 2.3 The Lattice; 2.4 Crystal Structure; 2.5 Notation; 2.5.1 Naming Planes; 2.5.2 Lattice Directions; 2.6 Lattice Geometry; 2.6.1 Planar Spacing Formulas; 2.6.2 Close Packing; 2.7 The Wigner-Seitz Cell; 2.8 Crystal Structures
2.8.1 Structures for Elements2.8.2 Structures for Compounds; 2.8.3 Solid Solutions; Related Reading; Exercises; 3 Diffraction; 3.1 Introduction; 3.2 Phase Difference and Bragg's Law; 3.3 The Scattering Problem; 3.3.1 Coherent Scattering from an Electron; 3.3.2 Coherent Scattering from an Atom; 3.3.3 Coherent Scattering from a Unit Cell; 3.3.4 Structure Factor Calculations; 3.4 Reciprocal Space, RESP; 3.4.1 Why Reciprocal Space?; 3.4.2 Definition of RESP; 3.4.3 Definition of Reciprocal Lattice Vector; 3.4.4 The Ewald Construction; 3.5 Diffraction Techniques; 3.5.1 Rotating Crystal Method
3.5.2 Powder Method3.5.3 Laue Method; 3.6 Wave Vector Representation; Related Reading; Exercises; 4 Defects in Solids; 4.1 Introduction; 4.2 Why Do Defects Form?; 4.2.1 Review of Some Thermodynamics Ideas; 4.3 Point Defects; 4.4 The Statistics of Point Defects; 4.5 Line Defects-Dislocations; 4.5.1 Edge Dislocations; 4.5.2 Screw Dislocations; 4.5.3 Burger's Vector and the Burger Circuit; 4.5.4 Dislocation Motion; 4.6 Planar Defects; 4.6.1 Grain Boundaries; 4.6.2 Twin Boundaries; 4.7 Three-Dimensional Defects; Related Reading; Exercises; 5 Diffusion in Solids
5.1 Introduction to Diffusion Equations5.2 Atomistic Theory of Diffusion: Fick's Laws and a Theory for the Diffussion Construct D; 5.3 Random Walk Problem; 5.3.1 Random Walk Calculations; 5.3.2 Relation of D to Random Walk; 5.3.3 Self-Diffusion Vacancy Mechanism in a FCC Crystal; 5.3.4 Activation Energy for Diffusion; 5.4 Other Mass Transport Mechanisms; 5.4.1 Permeability versus Diffusion; 5.4.2 Convection versus Diffusion; 5.5 Mathematics of Diffusion; 5.5.1 Steady State Diffusion-Fick's First Law; 5.5.2 Non-Steady State Diffusion-Fick's Second Law; Related Reading; Exercises
6 Phase Equilibria6.1 Introduction; 6.2 The Gibbs Phase Rule; 6.2.1 Definitions; 6.2.2 Equilibrium Among Phases-The Phase Rule; 6.2.3 Applications of the Phase Rule; 6.2.4 Construction of Phase Diagrams: Theory and Experiment; 6.2.5 The Tie Line Principle; 6.2.6 The Lever Rule; 6.2.7 Examples of Phase Equilibria; 6.3 Nucleation and Growth of Phases; 6.3.1 Thermodynamics of Phase Transformations; 6.3.2 Nucleation; Related Reading; Exercises; 7 Mechanical Properties of Solids-Elasticity; 7.1 Introduction; 7.2 Elasticity Relationships; 7.2.1 True versus Engineering Strain
7.2.2 Nature of Elasticity and Young's Modulus
Record Nr. UNINA-9910825316303321
Irene Eugene A  
Hoboken, N.J., : Wiley-Interscience, c2005
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Gaseous electronics : tables, atoms, and molecules / / Gorur Govinda Raju
Gaseous electronics : tables, atoms, and molecules / / Gorur Govinda Raju
Autore Raju Gorur G. <1937->
Edizione [1st edition]
Pubbl/distr/stampa Boca Raton, Fla. : , : CRC Press, , 2012
Descrizione fisica 1 online resource (812 p.)
Disciplina 530.4/4
Soggetto topico Plasma (Ionized gases) - Conductivity
Gases - Electric properties
Electric discharges through gases
Electronic apparatus and appliances - Materials
Soggetto genere / forma Electronic books.
ISBN 1-351-83332-4
1-315-21743-0
1-280-12217-X
9786613526038
1-4398-4895-5
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Front Cover; Dedication; Contents; Preface; Acknowledgments; Author; Section I: 1 Atom; Chapter 1: Argon (Ar); Chapter 2: Cesium (Cs); Chapter 3: Helium (He); Chapter 4: Krypton (Kr); Chapter 5: Mercury (Hg); Chapter 6: Neon (Ne); Chapter 7: Potassium (K); Chapter 8: Sodium (Na); Chapter 9: Xenon (Xe); Section II: 2 Atoms; Chapter 10: Bromine (Br2); Chapter 11: Carbon Monoxide (CO); Chapter 12: Chlorine (Cl2); Chapter 13: Deuterium (D2); Chapter 14: Deuterium Bromide (DBr); Chapter 15: Deuterium Chloride (DCl); Chapter 16: Deuterium Iodide (DI); Chapter 17: Fluorine (F2)
Chapter 18: Hydrogen (H2)Chapter 19: Hydrogen Bromide (HBr); Chapter 20: Hydrogen Chloride (HCl); Chapter 21: Hydrogen Fluoride (HF); Chapter 22: Hydrogen Iodide (HI); Chapter 23: Iodine (I2); Chapter 24: Nitric Oxide (NO); Chapter 25: Nitrogen (N2); Chapter 26: Oxygen (O2); Section III: 3 Atoms; Chapter 27: Carbon Dioxide (CO2); Chapter 28: Carbon Disulfide (CS2); Chapter 29: Carbon Oxysulfide (COS); Chapter 30: Chlorine Dioxide (ClO2); Chapter 31: Heavy Water (D2O); Chapter 32: Hydrogen Sulfide (H2S); Chapter 33: Nitrogen Dioxide (NO2); Chapter 34: Nitrous Oxide (N2O)
Chapter 35: Ozone (O3)Chapter 36: Sulfur Dioxide (SO2); Chapter 37: Water Vapor (H2O); Section IV: 4 Atoms; Chapter 38: Acetylene (C2H2); Chapter 39: Ammonia (NH3); Chapter 40: Boron Trichloride (BCl3); Chapter 41: Boron Trifluoride (BF3); Chapter 42: Deuterated Ammonia (ND3); Chapter 43: Nitrogen Trifluoride (NF3); Chapter 44: Phosphine (PH3); Chapter 45: Phosphorous Trifluoride (PF3); Section V: 5 Atoms; Chapter 46: Bromochloromethane (CH2BrCl); Chapter 47: Bromomethane (CH3Br); Chapter 48: Bromotrichloromethane (CBrCl3); Chapter 49: Bromotrifluoromethane (CBrF3)
Chapter 50: Carbon Tetrachloride (CCl4)Chapter 51: Chlorodibromomethane (CHBr2Cl); Chapter 52: Chloromethane (CH3Cl); Chapter 53: Chlorotrifluoromethane (CClF3); Chapter 54: Deuterated Methane (CD4); Chapter 55: Dibromodifluoromethane (CBr2F2); Chapter 56: Dibromomethane (CH2Br2); Chapter 57: Dichlorodifluoromethane (CCl2F2); Chapter 58: Dichloromethane (CH2Cl2) and Difluoromethane (CH2F2); Chapter 59: Fluoromethane (CH3F); Chapter 60: Formic Acid (CH2O2); Chapter 61: Germane (GeH4); Chapter 62: Germanium Tetrachloride (GeCl4); Chapter 63: Iodomethane (CH3); Chapter 64: Methane (CH4)
Chapter 65: Silane (SiH4)Chapter 66: Silicon Tetrafluoride (SiF4); Chapter 67: Sulfuryl Fluoride (SOF2); Chapter 68: Tetrabromomethane (CBr4); Chapter 69: Tetrachlorosilane (SiCl4); Chapter 70: Tetrafluoromethane (CF4); Chapter 71: Tribromofluoromethane (CBr3F); Chapter 72: Tribromomethane (CHBr3); Chapter 73: Trichlorofluoromethane (CCl3F); Chapter 74: Trichloromethane (CHCl3); Chapter 75: Trifluoromethane (CHF3); Section VI: 6 Atoms; Chapter 76: Dibromoethene (C2H2Br2); Chapter 77: Dichloroethene (C2H2Cl2); Chapter 78: Ethylene (C2H4); Chapter 79: Methanethiol (CH3SH)
Chapter 80: Methanol (CH3OH)
Record Nr. UNINA-9910457532403321
Raju Gorur G. <1937->  
Boca Raton, Fla. : , : CRC Press, , 2012
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Gaseous electronics : tables, atoms, and molecules / / Gorur Govinda Raju
Gaseous electronics : tables, atoms, and molecules / / Gorur Govinda Raju
Autore Raju Gorur G. <1937->
Edizione [1st edition]
Pubbl/distr/stampa Boca Raton, Fla. : , : CRC Press, , 2012
Descrizione fisica 1 online resource (812 p.)
Disciplina 530.4/4
Soggetto topico Plasma (Ionized gases) - Conductivity
Gases - Electric properties
Electric discharges through gases
Electronic apparatus and appliances - Materials
ISBN 1-351-83332-4
1-315-21743-0
1-280-12217-X
9786613526038
1-4398-4895-5
Classificazione SCI051000TEC008000TEC031020
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Front Cover; Dedication; Contents; Preface; Acknowledgments; Author; Section I: 1 Atom; Chapter 1: Argon (Ar); Chapter 2: Cesium (Cs); Chapter 3: Helium (He); Chapter 4: Krypton (Kr); Chapter 5: Mercury (Hg); Chapter 6: Neon (Ne); Chapter 7: Potassium (K); Chapter 8: Sodium (Na); Chapter 9: Xenon (Xe); Section II: 2 Atoms; Chapter 10: Bromine (Br2); Chapter 11: Carbon Monoxide (CO); Chapter 12: Chlorine (Cl2); Chapter 13: Deuterium (D2); Chapter 14: Deuterium Bromide (DBr); Chapter 15: Deuterium Chloride (DCl); Chapter 16: Deuterium Iodide (DI); Chapter 17: Fluorine (F2)
Chapter 18: Hydrogen (H2)Chapter 19: Hydrogen Bromide (HBr); Chapter 20: Hydrogen Chloride (HCl); Chapter 21: Hydrogen Fluoride (HF); Chapter 22: Hydrogen Iodide (HI); Chapter 23: Iodine (I2); Chapter 24: Nitric Oxide (NO); Chapter 25: Nitrogen (N2); Chapter 26: Oxygen (O2); Section III: 3 Atoms; Chapter 27: Carbon Dioxide (CO2); Chapter 28: Carbon Disulfide (CS2); Chapter 29: Carbon Oxysulfide (COS); Chapter 30: Chlorine Dioxide (ClO2); Chapter 31: Heavy Water (D2O); Chapter 32: Hydrogen Sulfide (H2S); Chapter 33: Nitrogen Dioxide (NO2); Chapter 34: Nitrous Oxide (N2O)
Chapter 35: Ozone (O3)Chapter 36: Sulfur Dioxide (SO2); Chapter 37: Water Vapor (H2O); Section IV: 4 Atoms; Chapter 38: Acetylene (C2H2); Chapter 39: Ammonia (NH3); Chapter 40: Boron Trichloride (BCl3); Chapter 41: Boron Trifluoride (BF3); Chapter 42: Deuterated Ammonia (ND3); Chapter 43: Nitrogen Trifluoride (NF3); Chapter 44: Phosphine (PH3); Chapter 45: Phosphorous Trifluoride (PF3); Section V: 5 Atoms; Chapter 46: Bromochloromethane (CH2BrCl); Chapter 47: Bromomethane (CH3Br); Chapter 48: Bromotrichloromethane (CBrCl3); Chapter 49: Bromotrifluoromethane (CBrF3)
Chapter 50: Carbon Tetrachloride (CCl4)Chapter 51: Chlorodibromomethane (CHBr2Cl); Chapter 52: Chloromethane (CH3Cl); Chapter 53: Chlorotrifluoromethane (CClF3); Chapter 54: Deuterated Methane (CD4); Chapter 55: Dibromodifluoromethane (CBr2F2); Chapter 56: Dibromomethane (CH2Br2); Chapter 57: Dichlorodifluoromethane (CCl2F2); Chapter 58: Dichloromethane (CH2Cl2) and Difluoromethane (CH2F2); Chapter 59: Fluoromethane (CH3F); Chapter 60: Formic Acid (CH2O2); Chapter 61: Germane (GeH4); Chapter 62: Germanium Tetrachloride (GeCl4); Chapter 63: Iodomethane (CH3); Chapter 64: Methane (CH4)
Chapter 65: Silane (SiH4)Chapter 66: Silicon Tetrafluoride (SiF4); Chapter 67: Sulfuryl Fluoride (SOF2); Chapter 68: Tetrabromomethane (CBr4); Chapter 69: Tetrachlorosilane (SiCl4); Chapter 70: Tetrafluoromethane (CF4); Chapter 71: Tribromofluoromethane (CBr3F); Chapter 72: Tribromomethane (CHBr3); Chapter 73: Trichlorofluoromethane (CCl3F); Chapter 74: Trichloromethane (CHCl3); Chapter 75: Trifluoromethane (CHF3); Section VI: 6 Atoms; Chapter 76: Dibromoethene (C2H2Br2); Chapter 77: Dichloroethene (C2H2Cl2); Chapter 78: Ethylene (C2H4); Chapter 79: Methanethiol (CH3SH)
Chapter 80: Methanol (CH3OH)
Record Nr. UNINA-9910781940303321
Raju Gorur G. <1937->  
Boca Raton, Fla. : , : CRC Press, , 2012
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Gaseous electronics : tables, atoms, and molecules / / Gorur Govinda Raju
Gaseous electronics : tables, atoms, and molecules / / Gorur Govinda Raju
Autore Raju Gorur G. <1937->
Edizione [1st edition]
Pubbl/distr/stampa Boca Raton, Fla. : , : CRC Press, , 2012
Descrizione fisica 1 online resource (812 p.)
Disciplina 530.4/4
Soggetto topico Plasma (Ionized gases) - Conductivity
Gases - Electric properties
Electric discharges through gases
Electronic apparatus and appliances - Materials
ISBN 1-351-83332-4
1-315-21743-0
1-280-12217-X
9786613526038
1-4398-4895-5
Classificazione SCI051000TEC008000TEC031020
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Front Cover; Dedication; Contents; Preface; Acknowledgments; Author; Section I: 1 Atom; Chapter 1: Argon (Ar); Chapter 2: Cesium (Cs); Chapter 3: Helium (He); Chapter 4: Krypton (Kr); Chapter 5: Mercury (Hg); Chapter 6: Neon (Ne); Chapter 7: Potassium (K); Chapter 8: Sodium (Na); Chapter 9: Xenon (Xe); Section II: 2 Atoms; Chapter 10: Bromine (Br2); Chapter 11: Carbon Monoxide (CO); Chapter 12: Chlorine (Cl2); Chapter 13: Deuterium (D2); Chapter 14: Deuterium Bromide (DBr); Chapter 15: Deuterium Chloride (DCl); Chapter 16: Deuterium Iodide (DI); Chapter 17: Fluorine (F2)
Chapter 18: Hydrogen (H2)Chapter 19: Hydrogen Bromide (HBr); Chapter 20: Hydrogen Chloride (HCl); Chapter 21: Hydrogen Fluoride (HF); Chapter 22: Hydrogen Iodide (HI); Chapter 23: Iodine (I2); Chapter 24: Nitric Oxide (NO); Chapter 25: Nitrogen (N2); Chapter 26: Oxygen (O2); Section III: 3 Atoms; Chapter 27: Carbon Dioxide (CO2); Chapter 28: Carbon Disulfide (CS2); Chapter 29: Carbon Oxysulfide (COS); Chapter 30: Chlorine Dioxide (ClO2); Chapter 31: Heavy Water (D2O); Chapter 32: Hydrogen Sulfide (H2S); Chapter 33: Nitrogen Dioxide (NO2); Chapter 34: Nitrous Oxide (N2O)
Chapter 35: Ozone (O3)Chapter 36: Sulfur Dioxide (SO2); Chapter 37: Water Vapor (H2O); Section IV: 4 Atoms; Chapter 38: Acetylene (C2H2); Chapter 39: Ammonia (NH3); Chapter 40: Boron Trichloride (BCl3); Chapter 41: Boron Trifluoride (BF3); Chapter 42: Deuterated Ammonia (ND3); Chapter 43: Nitrogen Trifluoride (NF3); Chapter 44: Phosphine (PH3); Chapter 45: Phosphorous Trifluoride (PF3); Section V: 5 Atoms; Chapter 46: Bromochloromethane (CH2BrCl); Chapter 47: Bromomethane (CH3Br); Chapter 48: Bromotrichloromethane (CBrCl3); Chapter 49: Bromotrifluoromethane (CBrF3)
Chapter 50: Carbon Tetrachloride (CCl4)Chapter 51: Chlorodibromomethane (CHBr2Cl); Chapter 52: Chloromethane (CH3Cl); Chapter 53: Chlorotrifluoromethane (CClF3); Chapter 54: Deuterated Methane (CD4); Chapter 55: Dibromodifluoromethane (CBr2F2); Chapter 56: Dibromomethane (CH2Br2); Chapter 57: Dichlorodifluoromethane (CCl2F2); Chapter 58: Dichloromethane (CH2Cl2) and Difluoromethane (CH2F2); Chapter 59: Fluoromethane (CH3F); Chapter 60: Formic Acid (CH2O2); Chapter 61: Germane (GeH4); Chapter 62: Germanium Tetrachloride (GeCl4); Chapter 63: Iodomethane (CH3); Chapter 64: Methane (CH4)
Chapter 65: Silane (SiH4)Chapter 66: Silicon Tetrafluoride (SiF4); Chapter 67: Sulfuryl Fluoride (SOF2); Chapter 68: Tetrabromomethane (CBr4); Chapter 69: Tetrachlorosilane (SiCl4); Chapter 70: Tetrafluoromethane (CF4); Chapter 71: Tribromofluoromethane (CBr3F); Chapter 72: Tribromomethane (CHBr3); Chapter 73: Trichlorofluoromethane (CCl3F); Chapter 74: Trichloromethane (CHCl3); Chapter 75: Trifluoromethane (CHF3); Section VI: 6 Atoms; Chapter 76: Dibromoethene (C2H2Br2); Chapter 77: Dichloroethene (C2H2Cl2); Chapter 78: Ethylene (C2H4); Chapter 79: Methanethiol (CH3SH)
Chapter 80: Methanol (CH3OH)
Record Nr. UNINA-9910806246003321
Raju Gorur G. <1937->  
Boca Raton, Fla. : , : CRC Press, , 2012
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui