Autore	Tsuchiya Hideaki
Pubbl/distr/stampa	Singapore : , : Wiley, , 2016
Descrizione fisica	1 online resource (387 pages) : illustrations
Disciplina	621.38152
Altri autori (Persone)	KamakuraYoshinari
Soggetto topico	Nanoelectromechanical systems Electron transport Metal oxide semiconductors
ISBN	1-118-87172-3 1-118-87171-5 1-118-87173-1
Formato	Materiale a stampa
Livello bibliografico	Monografia
Lingua di pubblicazione	eng
Nota di contenuto	-- Preface ix -- Acknowledgements xi -- 1 Emerging Technologies 1 -- 1.1 Moore's Law and the Power Crisis 1 -- 1.2 Novel Device Architectures 2 -- 1.3 High Mobility Channel Materials 5 -- 1.4 Two?-Dimensional (2?-D) Materials 7 -- 1.5 Atomistic Modeling 8 -- 2 First?-principles calculations for Si nanostructures 12 -- 2.1 Band structure calculations 12 -- 2.1.1 Si ultrathin?-body structures 12 -- 2.1.2 Si nanowires 17 -- 2.1.3 Strain effects on band structures: From bulk to nanowire 20 -- 2.2 Tunneling current calculations through Si/SiO2/Si structures 31 -- 2.2.1 Atomic models of Si (001)/SiO2 /Si (001) structures 32 -- 2.2.2 Current?-voltage characteristics 33 -- 2.2.3 SiO2 thickness dependences 35 -- 3 Quasi?-ballistic Transport in Si Nanoscale MOSFETs 41 -- 3.1 A picture of quasi?-ballistic transport simulated using quantum?-corrected Monte Carlo simulation 41 -- 3.1.1 Device structure and simulation method 42 -- 3.1.2 Scattering rates for 3?-D electron gas 44 -- 3.1.3 Ballistic transport limit 46 -- 3.1.4 Quasi?-ballistic transport 50 -- 3.1.5 Role of elastic and inelastic phonon scattering 51 -- 3.2 Multi?-sub?-band Monte Carlo simulation considering quantum confinement in inversion layers 55 -- 3.2.1 Scattering Rates for 2?-D Electron Gas 56 -- 3.2.2 Increase in Dac for SOI MOSFETs 58 -- 3.2.3 Simulated electron mobilities in bulk Si and SOI MOSFETs 59 -- 3.2.4 Electrical characteristics of Si DG?-MOSFETs 61 -- 3.3 Extraction of quasi?-ballistic transport parameters in Si DG?-MOSFETs 64 -- 3.3.1 Backscattering coefficient 64 -- 3.3.2 Current drive 66 -- 3.3.3 Gate and drain bias dependences 67 -- 3.4 Quasi?-ballistic transport in Si junctionless transistors 69 -- 3.4.1 Device structure and simulation conditions 70 -- 3.4.2 Influence of SR scattering 71 -- 3.4.3 Influence of II scattering 74 -- 3.4.4 Backscattering coefficient 75 -- 3.5 Quasi?-ballistic transport in GAA?-Si nanowire MOSFETs 76 -- 3.5.1 Device structure and 3DMSB?-MC method 76 -- 3.5.2 Scattering rates for 1?-D electron gas 77. 3.5.3 ID-VG characteristics and backscattering coefficient 79 -- 4 Phonon Transport in Si Nanostructures 85 -- 4.1 Monte Carlo simulation method 87 -- 4.1.1 Phonon dispersion model 87 -- 4.1.2 Particle simulation of phonon transport 88 -- 4.1.3 Free flight and scattering 89 -- 4.2 Simulation of thermal conductivity 91 -- 4.2.1 Thermal conductivity of bulk silicon 91 -- 4.2.2 Thermal conductivity of silicon thin films 94 -- 4.2.3 Thermal conductivity of silicon nanowires 98 -- 4.2.4 Discussion on Boundary scattering effect 100 -- 4.3 Simulation of heat conduction in devices 102 -- 4.3.1 Simulation method 102 -- 4.3.2 Simple 1?-D structure 103 -- 4.3.3 FinFET structure 106 -- 5 Carrier Transport in High?-mobility MOSFETs 112 -- 5.1 Quantum?-corrected MC Simulation of High?-mobility MOSFETs 112 -- 5.1.1 Device Structure and Band Structures of Materials 112 -- 5.1.2 Band Parameters of Si, Ge, and III?-V Semiconductors 114 -- 5.1.3 Polar?-optical Phonon (POP) Scattering in III?-V Semiconductors 115 -- 5.1.4 Advantage of UTB Structure 116 -- 5.1.5 Drive Current of III?-V, Ge and Si n?-MOSFETs 119 -- 5.2 Source?-drain Direct Tunneling in Ultrascaled MOSFETs 124 -- 5.3 Wigner Monte Carlo (WMC) Method 125 -- 5.3.1 Wigner Transport Formalism 126 -- 5.3.2 Relation with Quantum?-corrected MC Method 129 -- 5.3.3 WMC Algorithm 131 -- 5.3.4 Description of Higher?-order Quantized Subbands 133 -- 5.3.5 Application to Resonant?-tunneling Diode 133 -- 5.4 Quantum Transport Simulation of III?-V n?-MOSFETs with Multi?-subband WMC (MSB?-WMC) Method 138 -- 5.4.1 Device Structure 138 -- 5.4.2 POP Scattering Rate for 2?-D Electron Gas 139 -- 5.4.3 ID-VG Characteristics for InGaAs DG?-MOSFETs 139 -- 5.4.4 Channel Length Dependence of SDT Leakage Current 143 -- 5.4.5 Effective Mass Dependence of Subthreshold Current Properties 144 -- 6 Atomistic Simulations of Si, Ge and III?-V Nanowire MOSFETs 151 -- 6.1 Phonon?-limited electron mobility in Si nanowires 151 -- 6.1.1 Band structure calculations 152. 6.1.2 Electron?-phonon interaction 161 -- 6.1.3 Electron mobility 162 -- 6.2 Comparison of phonon?-limited electron mobilities between Si and Ge nanowires 168 -- 6.3 Ballistic performances of Si and InAs nanowire MOSFETs 173 -- 6.3.1 Band structures 174 -- 6.3.2 Top?-of?-the?-barrier model 174 -- 6.3.3 ID-VG characteristics 177 -- 6.3.4 Quantum capacitances 178 -- 6.3.5 Power?-delay?-product 179 -- 6.4 Ballistic performances of InSb, InAs, and GaSb nanowire MOSFETs 181 -- 6.4.1 Band structures 182 -- 6.4.2 ID-VG characteristics 182 -- 6.4.3 Power?-delay?-product 186 -- Appendix A: Atomistic Poisson equation 187 -- Appendix B: Analytical expressions of electron?-phonon interaction Hamiltonian matrices 188 -- 7 2?-D Materials and Devices 191 -- 7.1 2?-D Materials 191 -- 7.1.1 Fundamental Properties of Graphene, Silicene and Germanene 192 -- 7.1.2 Features of 2?-D Materials as an FET Channel 197 -- 7.2 Graphene Nanostructures with a Bandgap 198 -- 7.2.1 Armchair?-edged Graphene Nanoribbons (A?-GNRs) 199 -- 7.2.2 Relaxation Effects of Edge Atoms 203 -- 7.2.3 Electrical Properties of A?-GNR?-FETs Under Ballistic Transport 205 -- 7.2.4 Bilayer Graphenes (BLGs) 209 -- 7.2.5 Graphene Nanomeshes (GNMs) 214 -- 7.3 Influence of Bandgap Opening on Ballistic Electron Transport in BLG and A?-GNR?-MOSFETs 215 -- 7.3.1 Small Bandgap Regime 217 -- 7.3.2 Large Bandgap Regime 219 -- 7.4 Silicene, Germanene and Graphene Nanoribbons 221 -- 7.4.1 Bandgap vs Ribbon Width 222 -- 7.4.2 Comparison of Band Structures 222 -- 7.5 Ballistic MOSFETs with Silicene, Germanene and Graphene nanoribbons 223 -- 7.5.1 ID-VG Characteristics 223 -- 7.5.2 Quantum Capacitances 224 -- 7.5.3 Channel Charge Density and Average Electron Velocity 225 -- 7.5.4 Source?-drain Direct Tunneling (SDT) 226 -- 7.6 Electron Mobility Calculation for Graphene on Substrates 228 -- 7.6.1 Band Structure 229 -- 7.6.2 Scattering Mechanisms 229 -- 7.6.3 Carrier Degeneracy 231 -- 7.6.4 Electron Mobility Considering Surface Optical Phonon Scattering of Substrates 232. 7.6.5 Electron Mobility Considering Charged Impurity Scattering 234 -- 7.7 Germanane MOSFETs 236 -- 7.7.1 Atomic Model for Germanane Nanoribbon Structure 237 -- 7.7.2 Band Structure and Electron Effective Mass 238 -- 7.7.3 Electron Mobility 240 -- Appendix A: Density?-of?-states for Carriers in Graphene 242 -- References 242 -- Index 247.
Record Nr.	UNINA-9910166635603321

Autore	Cai Wei <1962->
Pubbl/distr/stampa	Cambridge : , : Cambridge University Press, , 2013
Descrizione fisica	1 online resource (xviii, 444 pages) : digital, PDF file(s)
Disciplina	537.01/51
Soggetto topico	Electromagnetism - Mathematical models Electrostatics Electron transport
ISBN	1-139-61054-6 1-107-23570-7 1-139-61240-9 1-139-60888-6 1-139-10815-8 1-139-61612-9 1-139-62542-X 1-283-87054-1 1-139-62170-X
Formato	Materiale a stampa
Livello bibliografico	Monografia
Lingua di pubblicazione	eng
Nota di contenuto	Machine generated contents note: Part I. Electrostatics in Solvations: 1. Dielectric constant and fluctuation formulae for molecular dynamics; 2. Poisson-Boltzmann electrostatics and analytical approximations; 3. Numerical methods for Poisson-Boltzmann equations; 4. Fast algorithms for long-range interactions; Part II. Electromagnetic Scattering: 5. Maxwell equations, potentials, and physical/artificial boundary conditions; 6. Dyadic Green's functions in layered media; 7. High order methods for surface electromagnetic integral equations; 8. High order hierarchical Nedelec edge elements; 9. Time domain methods -- discontinuous Galerkin method and Yee scheme; 10. Computing scattering in periodic structures and surface plasmons; 11. Solving Schrödinger equations in waveguides and quantum dots; Part III. Electron Transport: 12. Quantum electron transport in semiconductors; 13. Non-equilibrium Green's function (NEGF) methods for transport; 14. Numerical methods for Wigner quantum transport; 15. Hydrodynamics electron transport and finite difference methods; 16. Transport models in plasma media and numerical methods.
Record Nr.	UNINA-9910452917903321

Autore	Dugdale J. S (John Sydney)
Edizione	[Dover edition.]
Pubbl/distr/stampa	Mineola, New York : , : Dover Publications, Inc., , 1977
Descrizione fisica	1 online resource (278 pages) : illustrations, graphs, tables
Disciplina	530.4/13
Collana	Dover books on science The electrical properties of metals and alloys
Soggetto topico	Free electron theory of metals Alloys - Electric properties Electron transport Metals - Electric properties
ISBN	0-486-81465-3
Formato	Materiale a stampa
Livello bibliografico	Monografia
Lingua di pubblicazione	eng
Record Nr.	UNINA-9910157451603321

Autore	Nag, B.R.
Pubbl/distr/stampa	Berlin : Springer-Verlag, 1980
Descrizione fisica	xvi, 461 p. : ill. ; 24 cm.
Collana	Springer series in solid-state science ; 2
Soggetto topico	Compound semiconductorss Electron transport
Classificazione	53.7.1 53.8.2 53.8.22 537.6'22 QC611.8
Formato	Materiale a stampa
Livello bibliografico	Monografia
Lingua di pubblicazione	eng
Record Nr.	UNISALENTO-991000910829707536

Autore	Ouisse Thierry
Pubbl/distr/stampa	London, : ISTE
Descrizione fisica	1 online resource (399 p.)
Disciplina	530.4/1 620.5
Collana	ISTE
Soggetto topico	Electron transport Nanostructured materials - Electric properties Nanostructures - Electric properties Mesoscopic phenomena (Physics)
Soggetto genere / forma	Electronic books.
ISBN	1-282-16520-8 9786612165207 0-470-61139-1 0-470-39400-5
Classificazione	VE 9850
Formato	Materiale a stampa
Livello bibliografico	Monografia
Lingua di pubblicazione	eng
Nota di contenuto	Electron Transport in Nanostructures and Mesoscopic Devices; Table of Contents; Chapter 1. Introduction; 1.1. Introduction and preliminary warning; 1.2. Bibliography; Chapter 2. Some Useful Concepts and Reminders; 2.1. Quantum mechanics and the Schrödinger equation; 2.1.1. A more than brief introduction; 2.1.2. The postulates of quantum mechanics; 2.1.3. Essential properties of observables; 2.1.4. Momentum operator; 2.1.5. Stationary states; 2.1.6. Probability current; 2.1.7. Electrons in vacuum and group velocity; 2.2. Energy band structure in a periodic lattice 2.3. Semi-classical approximation2.4. Electrons and holes; 2.5. Semiconductor heterostructure; 2.6. Quantum well; 2.6.1. 1D case; 2.6.2. Coupled quantum wells; 2.6.3. Quantum-confined Stark effect; 2.7. Tight-binding approximation; 2.8. Effective mass approximation; 2.8.1. Wannier functions; 2.8.2. Effective mass Schrödinger equation; 2.9. How good is the effective mass approximation in a confined structure?; 2.10. Density of states; 2.10.1. 3D case; 2.10.2. 2D case; 2.10.3. 1D case; 2.10.4. Summary; 2.11. Fermi-Dirac statistics; 2.12. Examples of 2D systems 2.13. Characteristic lengths and mesoscopic nature of electron transport2.14. Mobility: Drude model; 2.15. Conduction in degenerate materials; 2.16. Einstein relationship; 2.17. Low magnetic field transport; 2.18. High magnetic field transport; 2.18.1. Introduction; 2.18.2. Some reminders about the particle Hamiltonian in the presence of an electromagnetic field; 2.18.3. Action of a magnetic field (classical); 2.18.4. High magnetic field transport; 2.19. Exercises; 2.19.1. Exercise; 2.19.2. Exercise; 2.19.3. Exercise; 2.19.4. Exercise; 2.20. Bibliography Chapter 3. Ballistic Transport and Transmission Conductance3.1. Conductance of a ballistic conductor; 3.2. Connection between 2D and 1D systems; 3.3. A classical analogy; 3.4. Transmission conductance: Landauer's formula; 3.5. What if the device length really does go down to zero?; 3.6. A smart experiment which shows you everything; 3.7. Relationship between the Landauer formula and Ohm's law; 3.8. Dissipation with a scatterer; 3.9. Voltage probe measurements; 3.10. Comment about the assumption that T is constant; 3.11. Generalization of Landauer's formula: Büttiker's formula 3.11.1. Büttiker's formula3.11.2. Three-terminal device; 3.11.3. Four-terminal device; 3.12. Non-zero temperature; 3.12.1. Large applied bias μ1-μ2>>0; 3.12.2. Incoherent states; 3.12.3. Coherent states; 3.12.4. Physical parameters included in the transmission probability; 3.12.5. Linear response (μ1-μ2 4.1. Scattering matrix or S-matrix
Record Nr.	UNINA-9910139492503321