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11th Workshop on Crystalline Silicon Solar Cell Materials and Processes : August 19-22, 2001, Holiday Inn, Estes Park, Colorado : extended abstracts and papers / / workshop chairman/editor: B.L. Sopori
| 11th Workshop on Crystalline Silicon Solar Cell Materials and Processes : August 19-22, 2001, Holiday Inn, Estes Park, Colorado : extended abstracts and papers / / workshop chairman/editor: B.L. Sopori |
| Pubbl/distr/stampa | Golden, Colo. : , : National Renewable Energy Laboratory, , August 2001 |
| Descrizione fisica | 1 online resource (304 pages) : illustrations |
| Collana | NREL/BK |
| Soggetto topico |
Silicon - Defects
Crystal growth Energy Accounting Silicon Solar Cells Fabrication Silicon Mechanical Properties Impurities Contractors Gettering Manufacturing Passivation Defects Solar Cells Microelectronics |
| Soggetto genere / forma | Conference papers and proceedings. |
| Soggetto non controllato | Si Solar Cell - Crystalline Solar Cell - Materials And Processes |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | 11th Workshop on Crystalline Silicon Solar Cell Materials and Processes |
| Record Nr. | UNINA-9910706546503321 |
| Golden, Colo. : , : National Renewable Energy Laboratory, , August 2001 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Additives and crystallization processes [[electronic resource] ] : from fundamentals to applications / / Keshra Sangwal
| Additives and crystallization processes [[electronic resource] ] : from fundamentals to applications / / Keshra Sangwal |
| Autore | Sangwal Keshra |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : Wiley, c2007 |
| Descrizione fisica | 1 online resource (469 p.) |
| Disciplina |
622
660.284298 |
| Soggetto topico |
Crystal growth
Nucleation Additives Crystallization |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-280-97412-5
9786610974122 0-470-51783-2 0-470-51782-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Additives and Crystallization Processes; Contents; Preface; 1 Complexes in Solutions; 1.1 Structure of Common Solvents; 1.2 Structure of Pure Aqueous Electrolyte Solutions; 1.2.1 Solvation of Electrolyte Ions in Solutions; 1.2.2 Concentrated and Saturated Electrolyte Solutions; 1.2.3 Formation of Aquo and Partially Aquo Complexes; 1.3 Structure of Aqueous Electrolyte Solutions Containing Additives; 1.4 Polyelectrolytes and Surfactants in Solutions; 1.5 Polydentate Ligands and Molecular Additives; 1.6 Crystal-Additive Interactions; References
2 Three-Dimensional Nucleation and Metastable Zone Width2.1 Driving Force for Phase Transition; 2.2 Three-Dimensional Nucleation of Crystals; 2.2.1 Three-Dimensional Nucleation Rate; 2.2.2 Three-Dimensional Heterogeneous Nucleation; 2.3 Metastable Zone Width; 2.4 Nucleation and Transformation of Metastable Phases; 2.4.1 Crystallization of Metastable Phases; 2.4.2 Overall Crystallization; 2.5 Induction Period for Crystallization; 2.6 Effects of Additives; 2.6.1 Solubility; 2.6.2 Three-Dimensional Nucleation Rate; 2.6.3 Metastable Zone Width; References 3 Kinetics and Mechanism of Crystal Growth: An Overview3.1 Crystal Growth as a Kinetic Process; 3.2 Types of Crystal-Medium Interfaces; 3.3 Roughening of Steps and Surfaces; 3.3.1 Thermodynamic Roughening and the Surface Entropy Factor; 3.3.2 Kinetic Roughening; 3.4 Growth Kinetics of Rough Faces; 3.5 Growth Kinetics of Perfect Smooth Faces; 3.6 Growth Kinetics of Imperfect Smooth Faces; 3.6.1 Surface Diffusion and Direct Integration Models; 3.6.2 Bulk Diffusion Models; 3.6.3 Growth by a Group of Cooperating Screw Dislocations; 3.6.4 Preferential Growth at Edge Dislocations 3.7 Effect of Foreign Substances on Growth Kinetics3.7.1 Some General Considerations; 3.7.2 Growth Kinetics by Heterogeneous Two-Dimensional Nucleation; 3.8 Real Crystal Growth Mechanisms; 3.8.1 Structure of Interfacial Layer; 3.8.2 Sources of Growth Steps; 3.9 Techniques for Studying Growth Kinetics; References; 4 Effect of Impurities on Crystal Growth Kinetics; 4.1 Mobile and Immobile Impurities; 4.2 Surface Coverage and Adsorption Isotherms; 4.2.1 Adsorption Isotherms; 4.2.2 Changes in Surface Free Energy by Adsorption of Impurities; 4.3 Kinetic Models of Impurity Adsorption 4.3.1 Earlier Models4.3.2 Velocity of Curved Steps; 4.3.3 Impurity Adsorption at Kinks in Steps: Kubota-Mullin Model; 4.3.4 Impurity Adsorption at Surface Terrace: Cabrera-Vermilyea Model; 4.3.5 Effectiveness Factor for Impurity Adsorption; 4.3.6 Adsorption of Two Competing Impurities; 4.4 Confrontation of Impurity Adsorption Mechanisms with Experimental Data; 4.5 Time-Dependent Impurity Adsorption; 4.6 Growth Kinetics in the Presence of Impurities; 4.6.1 Basic Kinetic Equations; 4.6.2 Time Dependence of Face Displacement 4.6.3 Dependence of Kinetic Coefficient for Step Motion on Impurity Concentration |
| Record Nr. | UNINA-9910143715003321 |
Sangwal Keshra
|
||
| Chichester, England ; ; Hoboken, NJ, : Wiley, c2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Additives and crystallization processes [[electronic resource] ] : from fundamentals to applications / / Keshra Sangwal
| Additives and crystallization processes [[electronic resource] ] : from fundamentals to applications / / Keshra Sangwal |
| Autore | Sangwal Keshra |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : Wiley, c2007 |
| Descrizione fisica | 1 online resource (469 p.) |
| Disciplina |
622
660.284298 |
| Soggetto topico |
Crystal growth
Nucleation Additives Crystallization |
| ISBN |
1-280-97412-5
9786610974122 0-470-51783-2 0-470-51782-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Additives and Crystallization Processes; Contents; Preface; 1 Complexes in Solutions; 1.1 Structure of Common Solvents; 1.2 Structure of Pure Aqueous Electrolyte Solutions; 1.2.1 Solvation of Electrolyte Ions in Solutions; 1.2.2 Concentrated and Saturated Electrolyte Solutions; 1.2.3 Formation of Aquo and Partially Aquo Complexes; 1.3 Structure of Aqueous Electrolyte Solutions Containing Additives; 1.4 Polyelectrolytes and Surfactants in Solutions; 1.5 Polydentate Ligands and Molecular Additives; 1.6 Crystal-Additive Interactions; References
2 Three-Dimensional Nucleation and Metastable Zone Width2.1 Driving Force for Phase Transition; 2.2 Three-Dimensional Nucleation of Crystals; 2.2.1 Three-Dimensional Nucleation Rate; 2.2.2 Three-Dimensional Heterogeneous Nucleation; 2.3 Metastable Zone Width; 2.4 Nucleation and Transformation of Metastable Phases; 2.4.1 Crystallization of Metastable Phases; 2.4.2 Overall Crystallization; 2.5 Induction Period for Crystallization; 2.6 Effects of Additives; 2.6.1 Solubility; 2.6.2 Three-Dimensional Nucleation Rate; 2.6.3 Metastable Zone Width; References 3 Kinetics and Mechanism of Crystal Growth: An Overview3.1 Crystal Growth as a Kinetic Process; 3.2 Types of Crystal-Medium Interfaces; 3.3 Roughening of Steps and Surfaces; 3.3.1 Thermodynamic Roughening and the Surface Entropy Factor; 3.3.2 Kinetic Roughening; 3.4 Growth Kinetics of Rough Faces; 3.5 Growth Kinetics of Perfect Smooth Faces; 3.6 Growth Kinetics of Imperfect Smooth Faces; 3.6.1 Surface Diffusion and Direct Integration Models; 3.6.2 Bulk Diffusion Models; 3.6.3 Growth by a Group of Cooperating Screw Dislocations; 3.6.4 Preferential Growth at Edge Dislocations 3.7 Effect of Foreign Substances on Growth Kinetics3.7.1 Some General Considerations; 3.7.2 Growth Kinetics by Heterogeneous Two-Dimensional Nucleation; 3.8 Real Crystal Growth Mechanisms; 3.8.1 Structure of Interfacial Layer; 3.8.2 Sources of Growth Steps; 3.9 Techniques for Studying Growth Kinetics; References; 4 Effect of Impurities on Crystal Growth Kinetics; 4.1 Mobile and Immobile Impurities; 4.2 Surface Coverage and Adsorption Isotherms; 4.2.1 Adsorption Isotherms; 4.2.2 Changes in Surface Free Energy by Adsorption of Impurities; 4.3 Kinetic Models of Impurity Adsorption 4.3.1 Earlier Models4.3.2 Velocity of Curved Steps; 4.3.3 Impurity Adsorption at Kinks in Steps: Kubota-Mullin Model; 4.3.4 Impurity Adsorption at Surface Terrace: Cabrera-Vermilyea Model; 4.3.5 Effectiveness Factor for Impurity Adsorption; 4.3.6 Adsorption of Two Competing Impurities; 4.4 Confrontation of Impurity Adsorption Mechanisms with Experimental Data; 4.5 Time-Dependent Impurity Adsorption; 4.6 Growth Kinetics in the Presence of Impurities; 4.6.1 Basic Kinetic Equations; 4.6.2 Time Dependence of Face Displacement 4.6.3 Dependence of Kinetic Coefficient for Step Motion on Impurity Concentration |
| Record Nr. | UNINA-9910830629803321 |
|
Sangwal Keshra
|
||
| Chichester, England ; ; Hoboken, NJ, : Wiley, c2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Additives and crystallization processes : from fundamentals to applications / / Keshra Sangwal
| Additives and crystallization processes : from fundamentals to applications / / Keshra Sangwal |
| Autore | Sangwal Keshra |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : Wiley, c2007 |
| Descrizione fisica | 1 online resource (469 p.) |
| Disciplina | 660/.284298 |
| Soggetto topico |
Crystal growth
Nucleation Additives Crystallization |
| ISBN |
1-280-97412-5
9786610974122 0-470-51783-2 0-470-51782-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Additives and Crystallization Processes; Contents; Preface; 1 Complexes in Solutions; 1.1 Structure of Common Solvents; 1.2 Structure of Pure Aqueous Electrolyte Solutions; 1.2.1 Solvation of Electrolyte Ions in Solutions; 1.2.2 Concentrated and Saturated Electrolyte Solutions; 1.2.3 Formation of Aquo and Partially Aquo Complexes; 1.3 Structure of Aqueous Electrolyte Solutions Containing Additives; 1.4 Polyelectrolytes and Surfactants in Solutions; 1.5 Polydentate Ligands and Molecular Additives; 1.6 Crystal-Additive Interactions; References
2 Three-Dimensional Nucleation and Metastable Zone Width2.1 Driving Force for Phase Transition; 2.2 Three-Dimensional Nucleation of Crystals; 2.2.1 Three-Dimensional Nucleation Rate; 2.2.2 Three-Dimensional Heterogeneous Nucleation; 2.3 Metastable Zone Width; 2.4 Nucleation and Transformation of Metastable Phases; 2.4.1 Crystallization of Metastable Phases; 2.4.2 Overall Crystallization; 2.5 Induction Period for Crystallization; 2.6 Effects of Additives; 2.6.1 Solubility; 2.6.2 Three-Dimensional Nucleation Rate; 2.6.3 Metastable Zone Width; References 3 Kinetics and Mechanism of Crystal Growth: An Overview3.1 Crystal Growth as a Kinetic Process; 3.2 Types of Crystal-Medium Interfaces; 3.3 Roughening of Steps and Surfaces; 3.3.1 Thermodynamic Roughening and the Surface Entropy Factor; 3.3.2 Kinetic Roughening; 3.4 Growth Kinetics of Rough Faces; 3.5 Growth Kinetics of Perfect Smooth Faces; 3.6 Growth Kinetics of Imperfect Smooth Faces; 3.6.1 Surface Diffusion and Direct Integration Models; 3.6.2 Bulk Diffusion Models; 3.6.3 Growth by a Group of Cooperating Screw Dislocations; 3.6.4 Preferential Growth at Edge Dislocations 3.7 Effect of Foreign Substances on Growth Kinetics3.7.1 Some General Considerations; 3.7.2 Growth Kinetics by Heterogeneous Two-Dimensional Nucleation; 3.8 Real Crystal Growth Mechanisms; 3.8.1 Structure of Interfacial Layer; 3.8.2 Sources of Growth Steps; 3.9 Techniques for Studying Growth Kinetics; References; 4 Effect of Impurities on Crystal Growth Kinetics; 4.1 Mobile and Immobile Impurities; 4.2 Surface Coverage and Adsorption Isotherms; 4.2.1 Adsorption Isotherms; 4.2.2 Changes in Surface Free Energy by Adsorption of Impurities; 4.3 Kinetic Models of Impurity Adsorption 4.3.1 Earlier Models4.3.2 Velocity of Curved Steps; 4.3.3 Impurity Adsorption at Kinks in Steps: Kubota-Mullin Model; 4.3.4 Impurity Adsorption at Surface Terrace: Cabrera-Vermilyea Model; 4.3.5 Effectiveness Factor for Impurity Adsorption; 4.3.6 Adsorption of Two Competing Impurities; 4.4 Confrontation of Impurity Adsorption Mechanisms with Experimental Data; 4.5 Time-Dependent Impurity Adsorption; 4.6 Growth Kinetics in the Presence of Impurities; 4.6.1 Basic Kinetic Equations; 4.6.2 Time Dependence of Face Displacement 4.6.3 Dependence of Kinetic Coefficient for Step Motion on Impurity Concentration |
| Record Nr. | UNINA-9910877464103321 |
|
Sangwal Keshra
|
||
| Chichester, England ; ; Hoboken, NJ, : Wiley, c2007 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advanced Topics on Crystal Growth / / edited by Sukarno Olavo Ferreira
| Advanced Topics on Crystal Growth / / edited by Sukarno Olavo Ferreira |
| Pubbl/distr/stampa | Rijeka, Croatia : , : Intech, , 2013 |
| Descrizione fisica | 1 online resource (vi, 434 pages) : illustrations |
| Disciplina | 548.5 |
| Soggetto topico | Crystal growth |
| ISBN |
953-51-6307-8
953-51-1010-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910136159803321 |
| Rijeka, Croatia : , : Intech, , 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advances in Computer Simulation Studies on Crystal Growth / / edited by Hiroki Nada
| Advances in Computer Simulation Studies on Crystal Growth / / edited by Hiroki Nada |
| Pubbl/distr/stampa | [Place of publication not identified] : , : MDPI - Multidisciplinary Digital Publishing Institute, , 2018 |
| Descrizione fisica | 1 online resource (206 pages) |
| Disciplina | 548.5 |
| Soggetto topico | Crystal growth |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910598033103321 |
| [Place of publication not identified] : , : MDPI - Multidisciplinary Digital Publishing Institute, , 2018 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advances in computer simulation studies on crystal growth / / edited by Hiroki Nada
| Advances in computer simulation studies on crystal growth / / edited by Hiroki Nada |
| Pubbl/distr/stampa | Basel, Switzerland : , : MDPI, , [2018] |
| Descrizione fisica | 1 online resource (206 pages) : illustrations |
| Disciplina | 548.5 |
| Soggetto topico | Crystal growth |
| ISBN | 3-03897-357-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910688448103321 |
| Basel, Switzerland : , : MDPI, , [2018] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
The art and science of growing crystals / John J. Gilman
| The art and science of growing crystals / John J. Gilman |
| Autore | Gilman, John J. |
| Pubbl/distr/stampa | New York : John Wiley & Sons, 1963 |
| Descrizione fisica | 493 p. : ill. ; 27 cm. |
| Soggetto topico | Crystal growth |
| Classificazione |
53.7.15
548.5 QD921 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISALENTO-991000818329707536 |
|
Gilman, John J.
|
||
| New York : John Wiley & Sons, 1963 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. del Salento | ||
| ||
Bulk crystal growth of electronic, optical & optoelectronic materials [[electronic resource] /] / edited by Peter Capper
| Bulk crystal growth of electronic, optical & optoelectronic materials [[electronic resource] /] / edited by Peter Capper |
| Pubbl/distr/stampa | Chichester ; ; Hoboken, NJ, : John Wiley & Sons, c2005 |
| Descrizione fisica | 1 online resource (579 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) | CapperPeter |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Semiconductors - Materials
Optoelectronics - Materials Crystal growth |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-280-24169-1
9786610241699 0-470-01208-0 0-470-01207-2 |
| Classificazione | 51.12 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Contents; Series Preface; Preface; Acknowledgements; List of Contributors; Abbreviations; 1 Silicon; 1.1 Introduction; 1.2 Crystal-growth method and technology; 1.2.1 High-purity polycrystalline silicon; 1.2.2 CZ-Si growth apparatus and related furnace parts; 1.2.3 CZ-Si crystal growth; 1.2.4 FZ (float-zone) Si crystal growth; 1.2.5 Wafer processing; 1.3 Melt process; 1.3.1 Analysis of heat- and mass-transfer processes; 1.3.2 Oxygen transportation process and mechanism; 1.3.3 Control of oxygen concentration by application of cusp magnetic field; 1.4 Defect and wafer quality
1.4.1 Oxygen precipitation and gettering1.4.2 Grown-in defects; 1.5 Concluding remarks; References; 2 Growth of Gallium Arsenide; 2.1 Introduction; 2.2 Doping considerations; 2.3 Growth techniques; 2.3.1 Horizontal Bridgman and horizontal gradient freeze techniques; 2.3.2 Liquid encapsulated Czochralski (LEC) technique; 2.3.3 Vertical gradient freeze (VGF) technique; 2.4 Crystalline defects in GaAs; 2.4.1 Defects in melt-grown, semi-insulating GaAs; 2.5 Impurity and defect analysis of GaAs (chemical); 2.6 Impurity and defect analysis of GaAs (electrical) 2.6.1 Introduction to the electrical analysis of defects in GaAs2.7 Impurity and defect analysis of GaAs (optical); 2.7.1 Optical analysis of defects in GaAs; 2.8 Conclusions; Acknowledgments; References; 3 Computer Modelling of Bulk Crystal Growth; 3.1 Introduction; 3.2 Present state of bulk crystal growth modelling; 3.3 Bulk crystal growth processes; 3.4 Transport modelling in bulk crystal growth; 3.4.1 Governing equations; 3.4.2 Boundary conditions; 3.4.3 Continuum interface representation; 3.4.4 Radiation heat-transfer modelling; 3.4.5 Noninertial reference frames; 3.4.6 Magnetic fields 3.4.7 Turbulence3.5 Computer-aided analysis; 3.5.1 Discretization; 3.5.2 Numerical interface representation; 3.5.3 Deforming grids and ALE methods; 3.5.4 A simple fixed-grid method; 3.5.5 Quasi-steady-state models; 3.6 Modelling examples; 3.6.1 Float-zone refinement of silicon sheets; 3.6.2 Bridgman growth of CZT: axisymmetric analysis; 3.6.3 Bridgman growth of CZT: three-dimensional analysis; 3.6.4 Morphological stability in solution growth of KTP; 3.7 Summary and outlook; Acknowledgments; References; 4 Indium Phosphide Crystal Growth; 4.1 Introduction; 4.2 Material properties; 4.3 Hazards 4.4 Crystal structure4.5 Synthesis; 4.6 Single-crystal growth; 4.7 Defects; 4.7.1 Twins; 4.7.2 Dislocations; 4.8 Dislocation reduction; 4.9 VGF growth; 4.10 Crystal-growth modelling; 4.11 Dopants; 4.11.1 N-type InP; 4.11.2 P-type InP; 4.11.3 Semi-insulating InP; 4.12 Conclusion; Acknowledgements; References; 5 Bulk Growth of InSb and Related Ternary Alloys; 5.1 Introduction-a little history; 5.2 Why the interest?; 5.3 Key properties; 5.3.1 Crystallography; 5.3.2 Growth-critical material parameters; 5.3.3 Common growth conditions; 5.3.4 Impurities and dopants; 5.4 Czochralski growth 5.4.1 Challenges |
| Record Nr. | UNINA-9910143746003321 |
| Chichester ; ; Hoboken, NJ, : John Wiley & Sons, c2005 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Bulk crystal growth of electronic, optical & optoelectronic materials [[electronic resource] /] / edited by Peter Capper
| Bulk crystal growth of electronic, optical & optoelectronic materials [[electronic resource] /] / edited by Peter Capper |
| Pubbl/distr/stampa | Chichester ; ; Hoboken, NJ, : John Wiley & Sons, c2005 |
| Descrizione fisica | 1 online resource (579 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) | CapperPeter |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Semiconductors - Materials
Optoelectronics - Materials Crystal growth |
| ISBN |
1-280-24169-1
9786610241699 0-470-01208-0 0-470-01207-2 |
| Classificazione | 51.12 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Contents; Series Preface; Preface; Acknowledgements; List of Contributors; Abbreviations; 1 Silicon; 1.1 Introduction; 1.2 Crystal-growth method and technology; 1.2.1 High-purity polycrystalline silicon; 1.2.2 CZ-Si growth apparatus and related furnace parts; 1.2.3 CZ-Si crystal growth; 1.2.4 FZ (float-zone) Si crystal growth; 1.2.5 Wafer processing; 1.3 Melt process; 1.3.1 Analysis of heat- and mass-transfer processes; 1.3.2 Oxygen transportation process and mechanism; 1.3.3 Control of oxygen concentration by application of cusp magnetic field; 1.4 Defect and wafer quality
1.4.1 Oxygen precipitation and gettering1.4.2 Grown-in defects; 1.5 Concluding remarks; References; 2 Growth of Gallium Arsenide; 2.1 Introduction; 2.2 Doping considerations; 2.3 Growth techniques; 2.3.1 Horizontal Bridgman and horizontal gradient freeze techniques; 2.3.2 Liquid encapsulated Czochralski (LEC) technique; 2.3.3 Vertical gradient freeze (VGF) technique; 2.4 Crystalline defects in GaAs; 2.4.1 Defects in melt-grown, semi-insulating GaAs; 2.5 Impurity and defect analysis of GaAs (chemical); 2.6 Impurity and defect analysis of GaAs (electrical) 2.6.1 Introduction to the electrical analysis of defects in GaAs2.7 Impurity and defect analysis of GaAs (optical); 2.7.1 Optical analysis of defects in GaAs; 2.8 Conclusions; Acknowledgments; References; 3 Computer Modelling of Bulk Crystal Growth; 3.1 Introduction; 3.2 Present state of bulk crystal growth modelling; 3.3 Bulk crystal growth processes; 3.4 Transport modelling in bulk crystal growth; 3.4.1 Governing equations; 3.4.2 Boundary conditions; 3.4.3 Continuum interface representation; 3.4.4 Radiation heat-transfer modelling; 3.4.5 Noninertial reference frames; 3.4.6 Magnetic fields 3.4.7 Turbulence3.5 Computer-aided analysis; 3.5.1 Discretization; 3.5.2 Numerical interface representation; 3.5.3 Deforming grids and ALE methods; 3.5.4 A simple fixed-grid method; 3.5.5 Quasi-steady-state models; 3.6 Modelling examples; 3.6.1 Float-zone refinement of silicon sheets; 3.6.2 Bridgman growth of CZT: axisymmetric analysis; 3.6.3 Bridgman growth of CZT: three-dimensional analysis; 3.6.4 Morphological stability in solution growth of KTP; 3.7 Summary and outlook; Acknowledgments; References; 4 Indium Phosphide Crystal Growth; 4.1 Introduction; 4.2 Material properties; 4.3 Hazards 4.4 Crystal structure4.5 Synthesis; 4.6 Single-crystal growth; 4.7 Defects; 4.7.1 Twins; 4.7.2 Dislocations; 4.8 Dislocation reduction; 4.9 VGF growth; 4.10 Crystal-growth modelling; 4.11 Dopants; 4.11.1 N-type InP; 4.11.2 P-type InP; 4.11.3 Semi-insulating InP; 4.12 Conclusion; Acknowledgements; References; 5 Bulk Growth of InSb and Related Ternary Alloys; 5.1 Introduction-a little history; 5.2 Why the interest?; 5.3 Key properties; 5.3.1 Crystallography; 5.3.2 Growth-critical material parameters; 5.3.3 Common growth conditions; 5.3.4 Impurities and dopants; 5.4 Czochralski growth 5.4.1 Challenges |
| Record Nr. | UNINA-9910829932303321 |
| Chichester ; ; Hoboken, NJ, : John Wiley & Sons, c2005 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Soggetto topico
-
Crystal growth
(120)
- Crystals (13)
- Crystallography (10)
- Nucleation (10)
- Crystallization (8)