a-SiGe:H materials and devices deposited by hot wire CVD using a tantalum filament operated at low temperature [[electronic resource] /] / A.H. Mahan ... [and others] |
Pubbl/distr/stampa | Golden, Colo. : , : National Renewable Energy Laboratory, , [2005] |
Descrizione fisica | 1 volume : digital, PDF file |
Altri autori (Persone) | MahanA. Harv |
Collana | Conference paper |
Soggetto topico |
Solar cells - Materials
Chemical vapor deposition |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Altri titoli varianti | A-SiGe |
Record Nr. | UNINA-9910698275303321 |
Golden, Colo. : , : National Renewable Energy Laboratory, , [2005] | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
Advanced materials |
Pubbl/distr/stampa | [Deerfield Beach, FL, : VCH Publishers] |
Soggetto topico |
Materials
Chemical vapor deposition Matériaux - Périodiques Dépôt chimique en phase vapeur |
ISSN | 1521-4095 |
Formato | Materiale a stampa |
Livello bibliografico | Periodico |
Lingua di pubblicazione | eng |
Record Nr. | UNISA-996207211003316 |
[Deerfield Beach, FL, : VCH Publishers] | ||
Materiale a stampa | ||
Lo trovi qui: Univ. di Salerno | ||
|
Advanced materials |
Pubbl/distr/stampa | [Deerfield Beach, FL, : VCH Publishers] |
Soggetto topico |
Materials
Chemical vapor deposition Matériaux - Périodiques Dépôt chimique en phase vapeur |
ISSN | 1521-4095 |
Formato | Materiale a stampa |
Livello bibliografico | Periodico |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910147156703321 |
[Deerfield Beach, FL, : VCH Publishers] | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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Atomic layer deposition [[electronic resource] ] : principles, characteristics, and nanotechnology applications / / Tommi Kaariainen ... [et al.] |
Autore | Kaariainen Tommi |
Edizione | [2nd ed.] |
Pubbl/distr/stampa | Hoboken, NJ, : John Wiley & Sons, c2013 |
Descrizione fisica | 1 online resource (272 p.) |
Disciplina | 620/.5 |
Altri autori (Persone) |
CameronDavid <1949->
KääriäinenMarja-Leena ShermanArthur <1931-> |
Soggetto topico |
Chemical vapor deposition
Epitaxy Microelectronics Nanotechnology |
ISBN |
1-118-74740-2
1-118-74742-9 1-118-74738-0 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
Cover; Title Page; Copyright Page; Contents; Acknowledgements; Foreword; Preface; 1 Fundamentals of Atomic Layer Deposition; 1.1 Chemical Vapour Deposition; 1.1.1 Thermal CVD; 1.1.2 Plasma Enhanced CVD (PECVD); 1.2 Vapour Adsorption; 1.2.1 Physisorption; 1.2.2 Chemisorption; 1.3 Atomic Layer Deposition (ALD); 1.3.1 Thermal ALD Processes; 1.3.2 Radical Enhanced ALD (REALD); 1.3.3 Spatial ALD (SALD); References; 2 Elemental Semiconductor Epitaxial Films; 2.1 Epitaxial Silicon; 2.1.1 Dichlorosilane Processes; 2.1.2 Other Processes; 2.1.3 Epitaxial Germanium; References
3 III-V Semiconductor Films3.1 Gallium Arsenide; 3.1.1 Organometallic Precursors; 3.1.2 Halogen Precursors; 3.2 Other III-V Semiconductor Films; 3.3 Applications; 3.3.1 Photonic Structures; 3.3.2 Transistors; References; 4 Oxide films; 4.1 Introduction; 4.2 Aluminum Oxide; 4.2.1 Processes and Properties of Aluminum Oxide; 4.3 Titanium Dioxide; 4.3.1 Processes and Properties of TiO2; 4.4 Zinc Oxide; 4.4.1 Processes and Properties of ZnO; 4.5 Zirconium Dioxide; 4.5.1 Processes and Properties of ZrO2; 4.6 Hafnium Dioxide; 4.6.1 Processes and Properties of HfO2; 4.7 Other Oxides; 4.7.1 Tin Oxide 4.7.2 Indium Oxide4.7.3 Tantalum Oxide; 4.8 Mixed Oxides and Nanolaminates; 4.8.1 Mixed Oxide Processes; 4.8.2 Nanolaminate Oxides; 4.9 Multilayers; References; 5 Nitrides and Other Compounds; 5.1 Introduction; 5.2 Nitrides; 5.2.1 Transition Metal Nitrides; 5.2.2 Group III Nitrides; 5.2.3 Group IV Nitrides; 5.2.4 Mixed Nitrides; 5.3 Chalcogenides; 5.4 Other Compounds; References; 6 Metals; 6.1 Introduction; 6.2 Noble Metals; 6.2.1 Silver Processes and Applications; 6.2.2 Ruthenium Processes and Applications; 6.2.3 Platinum and Palladium Processes and Applications 6.2.4 Rhrodium Processes and Applications6.2.5 Iridium Processes and Applications; 6.3 Titanium; 6.4 Tantalum; 6.5 Aluminum; 6.6 Copper; 6.7 Other Transition Metals; References; 7 Organic and Hybrid Materials; 7.1 Introduction; 7.2 Organic layers; 7.3 Hybrid Organic-inorganic Layers.; 7.4 Applications of Organic and Hybrid Films; References; 8 ALD Applications and Industry; 8.1 Introduction; 8.2 MEMS/NEMS; 8.3 Thin Film Magnetic Heads; 8.4 Coating Nanoparticles, Nanomaterials and Porous Objects; 8.5 Optical Coatings; 8.6 Thin Film Electroluminescent Displays; 8.7 Solar Cells 8.8 Anti-corrosion Layers8.9 Opportunities in Organic Electronics; 8.10 ALD Tool Manufacturers and Coating Providers; References; Index |
Record Nr. | UNINA-9910141573603321 |
Kaariainen Tommi | ||
Hoboken, NJ, : John Wiley & Sons, c2013 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
Atomic layer deposition : principles, characteristics, and nanotechnology applications / / Tommi Kaariainen ... [et al.] |
Autore | Kaariainen Tommi |
Edizione | [2nd ed.] |
Pubbl/distr/stampa | Hoboken, NJ, : John Wiley & Sons, c2013 |
Descrizione fisica | 1 online resource (272 p.) |
Disciplina | 620/.5 |
Altri autori (Persone) |
CameronDavid <1949->
KääriäinenMarja-Leena ShermanArthur <1931-> |
Soggetto topico |
Chemical vapor deposition
Epitaxy Microelectronics Nanotechnology |
ISBN |
1-118-74740-2
1-118-74742-9 1-118-74738-0 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
Cover; Title Page; Copyright Page; Contents; Acknowledgements; Foreword; Preface; 1 Fundamentals of Atomic Layer Deposition; 1.1 Chemical Vapour Deposition; 1.1.1 Thermal CVD; 1.1.2 Plasma Enhanced CVD (PECVD); 1.2 Vapour Adsorption; 1.2.1 Physisorption; 1.2.2 Chemisorption; 1.3 Atomic Layer Deposition (ALD); 1.3.1 Thermal ALD Processes; 1.3.2 Radical Enhanced ALD (REALD); 1.3.3 Spatial ALD (SALD); References; 2 Elemental Semiconductor Epitaxial Films; 2.1 Epitaxial Silicon; 2.1.1 Dichlorosilane Processes; 2.1.2 Other Processes; 2.1.3 Epitaxial Germanium; References
3 III-V Semiconductor Films3.1 Gallium Arsenide; 3.1.1 Organometallic Precursors; 3.1.2 Halogen Precursors; 3.2 Other III-V Semiconductor Films; 3.3 Applications; 3.3.1 Photonic Structures; 3.3.2 Transistors; References; 4 Oxide films; 4.1 Introduction; 4.2 Aluminum Oxide; 4.2.1 Processes and Properties of Aluminum Oxide; 4.3 Titanium Dioxide; 4.3.1 Processes and Properties of TiO2; 4.4 Zinc Oxide; 4.4.1 Processes and Properties of ZnO; 4.5 Zirconium Dioxide; 4.5.1 Processes and Properties of ZrO2; 4.6 Hafnium Dioxide; 4.6.1 Processes and Properties of HfO2; 4.7 Other Oxides; 4.7.1 Tin Oxide 4.7.2 Indium Oxide4.7.3 Tantalum Oxide; 4.8 Mixed Oxides and Nanolaminates; 4.8.1 Mixed Oxide Processes; 4.8.2 Nanolaminate Oxides; 4.9 Multilayers; References; 5 Nitrides and Other Compounds; 5.1 Introduction; 5.2 Nitrides; 5.2.1 Transition Metal Nitrides; 5.2.2 Group III Nitrides; 5.2.3 Group IV Nitrides; 5.2.4 Mixed Nitrides; 5.3 Chalcogenides; 5.4 Other Compounds; References; 6 Metals; 6.1 Introduction; 6.2 Noble Metals; 6.2.1 Silver Processes and Applications; 6.2.2 Ruthenium Processes and Applications; 6.2.3 Platinum and Palladium Processes and Applications 6.2.4 Rhrodium Processes and Applications6.2.5 Iridium Processes and Applications; 6.3 Titanium; 6.4 Tantalum; 6.5 Aluminum; 6.6 Copper; 6.7 Other Transition Metals; References; 7 Organic and Hybrid Materials; 7.1 Introduction; 7.2 Organic layers; 7.3 Hybrid Organic-inorganic Layers.; 7.4 Applications of Organic and Hybrid Films; References; 8 ALD Applications and Industry; 8.1 Introduction; 8.2 MEMS/NEMS; 8.3 Thin Film Magnetic Heads; 8.4 Coating Nanoparticles, Nanomaterials and Porous Objects; 8.5 Optical Coatings; 8.6 Thin Film Electroluminescent Displays; 8.7 Solar Cells 8.8 Anti-corrosion Layers8.9 Opportunities in Organic Electronics; 8.10 ALD Tool Manufacturers and Coating Providers; References; Index |
Record Nr. | UNINA-9910827311103321 |
Kaariainen Tommi | ||
Hoboken, NJ, : John Wiley & Sons, c2013 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
Atomlagenabscheidung von hafniumoxid / / Thomas Zilbauer |
Autore | Zilbauer Thomas |
Edizione | [1. Auflage.] |
Pubbl/distr/stampa | Göttingen, [Germany] : , : Cuvillier Verlag, , 2010 |
Descrizione fisica | 1 online resource (152 pages) : illustrations (some color) |
Disciplina | 660.04 |
Soggetto topico |
Chemical vapor deposition
Atomic layer deposition Hafnium oxide |
ISBN | 3-7369-3270-7 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | ger |
Record Nr. | UNINA-9910794942103321 |
Zilbauer Thomas | ||
Göttingen, [Germany] : , : Cuvillier Verlag, , 2010 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
Atomlagenabscheidung von hafniumoxid / / Thomas Zilbauer |
Autore | Zilbauer Thomas |
Edizione | [1. Auflage.] |
Pubbl/distr/stampa | Göttingen, [Germany] : , : Cuvillier Verlag, , 2010 |
Descrizione fisica | 1 online resource (152 pages) : illustrations (some color) |
Disciplina | 660.04 |
Soggetto topico |
Chemical vapor deposition
Atomic layer deposition Hafnium oxide |
ISBN | 3-7369-3270-7 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | ger |
Record Nr. | UNINA-9910822746903321 |
Zilbauer Thomas | ||
Göttingen, [Germany] : , : Cuvillier Verlag, , 2010 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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Catalytic chemical vapor deposition : technology and applications of Cat-CVD / / Hideki Matsumura [and three others] |
Autore | Matsumura H (Hideki) |
Pubbl/distr/stampa | Weinheim, Germany : , : Wiley-VCH, , [2019] |
Descrizione fisica | 1 online resource (440 pages) |
Disciplina | 660.2995 |
Soggetto topico |
Catalysts
Chemical vapor deposition |
Soggetto genere / forma | Electronic books. |
ISBN |
1-5231-2796-1
3-527-81864-2 3-527-81865-0 3-527-81866-9 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910555272303321 |
Matsumura H (Hideki) | ||
Weinheim, Germany : , : Wiley-VCH, , [2019] | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
|
Catalytic chemical vapor deposition : technology and applications of Cat-CVD / / Hideki Matsumura [and three others] |
Autore | Matsumura H (Hideki) |
Pubbl/distr/stampa | Weinheim, Germany : , : Wiley-VCH, , [2019] |
Descrizione fisica | 1 online resource (440 pages) |
Disciplina | 660.2995 |
Soggetto topico |
Catalysts
Chemical vapor deposition |
ISBN |
1-5231-2796-1
3-527-81864-2 3-527-81865-0 3-527-81866-9 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910830881503321 |
Matsumura H (Hideki) | ||
Weinheim, Germany : , : Wiley-VCH, , [2019] | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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Characterization of multi temperature and multi RF chuck power grown silicon nitride films by PECVD and ICP vapor deposiiton [[electronic resource] /] / F. Semedy ... [and others] |
Autore | Semendy Fred |
Pubbl/distr/stampa | Adelphi, MD : , : Army Resarch Laboratory, , [2010] |
Descrizione fisica | 1 online resource (vi, 14 pages) : color illustrations |
Collana | ARL-TR |
Soggetto topico |
Silicon nitride
Chemical vapor deposition |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Altri titoli varianti | Characterization of multi temperature and multi RF chuck power grown silicon nitride films by plasma enhanced chemical vapor deposition and inductive coupled plasma vapor deposition |
Record Nr. | UNINA-9910697126203321 |
Semendy Fred | ||
Adelphi, MD : , : Army Resarch Laboratory, , [2010] | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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