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Chalcogenide letters
| Chalcogenide letters |
| Pubbl/distr/stampa | Bucharest, Romania, : National Institute of Materials Physics, : National Institute of Optoelectronics, 2004- |
| Disciplina | 621.35 |
| Soggetto topico |
Chalcogenides
Chalcogénures |
| Soggetto genere / forma | Periodicals. |
| ISSN | 1841-4834 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Periodico |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910145784603321 |
| Bucharest, Romania, : National Institute of Materials Physics, : National Institute of Optoelectronics, 2004- | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Chalcogenide Nanophotonics
| Chalcogenide Nanophotonics |
| Autore | Cao Tun |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Newark : , : John Wiley & Sons, Incorporated, , 2026 |
| Descrizione fisica | 1 online resource (368 pages) |
| Disciplina | 621.381 |
| Soggetto topico |
Chalcogenides
Nanophotonics |
| ISBN |
3-527-84455-4
3-527-84457-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9911058127503321 |
Cao Tun
|
||
| Newark : , : John Wiley & Sons, Incorporated, , 2026 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Chalcogenide photovoltaics [[electronic resource] ] : physics, technologies, and thin film devices / / Roland Scheer and Hans-Werner Schock
| Chalcogenide photovoltaics [[electronic resource] ] : physics, technologies, and thin film devices / / Roland Scheer and Hans-Werner Schock |
| Autore | Scheer Roland |
| Pubbl/distr/stampa | Weinheim, Germany, : Wiley-VCH Verlag GmbH & Co., 2011 |
| Descrizione fisica | 1 online resource (386 p.) |
| Disciplina | 621.31244 |
| Altri autori (Persone) | SchockH. W (Hans-Werner) |
| Soggetto topico |
Photovoltaic cells - Materials
Chalcogenides Compound semiconductors |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-283-30246-2
9786613302465 3-527-63371-5 3-527-63370-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Chalcogenide Photovoltaics; Contents; Preface; Symbols and Acronyms; 1 Introduction; 1.1 History of Cu(In,Ga)(S,Se)2 Solar Cells; 1.1.1 Milestones of Cu(In,Ga)(S,Se)2 Development; 1.2 History of CdTe Solar Cells; 1.2.1 Milestones of CdTe Development; 1.3 Prospects of Chalcogenide Photovoltaics; 2 Thin Film Heterostructures; 2.1 Energies and Potentials; 2.2 Charge Densities and Fluxes; 2.3 Energy Band Diagrams; 2.3.1 Rules and Conventions; 2.3.2 Absorber/Window; 2.3.3 Absorber/Buffer/Window; 2.3.4 Interface States; 2.3.5 Interface Dipoles; 2.3.6 Deep Bulk States; 2.3.7 Bandgap Gradients
2.4 Diode Currents2.4.1 Superposition Principle and Shifting Approximation; 2.4.2 Regions of Recombination; 2.4.3 Radiative Recombination; 2.4.4 Auger Recombination; 2.4.5 Defect Related Recombination; 2.4.5.1 SCR Recombination; 2.4.5.2 QNR Recombination; 2.4.5.3 Back Surface Recombination; 2.4.5.4 Interface Recombination; 2.4.6 Parallel Processes; 2.4.6.1 SCR and QNR Recombination; 2.4.6.2 SCR and IF Recombination; 2.4.7 Barriers for Diode Current; 2.4.8 Bias Dependence; 2.4.9 Non-Homogeneities; 2.5 Light Generated Currents; 2.5.1 Generation Currents; 2.5.2 Generation Function 2.5.3 Photo Current2.5.4 Collection Function; 2.5.4.1 Absorber Quasi Neutral Region; 2.5.4.2 QNR with Graded Bandgap; 2.5.4.3 QNR with Back Surface Field; 2.5.4.4 Absorber Space Charge Region; 2.5.4.5 Buffer Layer; 2.5.4.6 Simulating the Collection Function; 2.5.5 Quantum Efficiency and Charge Collection Efficiency; 2.5.6 Barriers for Photo Current; 2.5.7 Voltage Dependence of Photo Current; 2.5.7.1 Width of SCR; 2.5.7.2 Interface Recombination; 2.5.7.3 Photo Current Barriers; 2.6 Device Analysis and Parameters; 2.6.1 Equivalent Circuits; 2.6.1.1 DC Equivalent Circuit 2.6.1.2 AC Equivalent Circuit2.6.1.3 Module Equivalent Circuit; 2.6.2 Current-Voltage Analysis; 2.6.2.1 External Collection Efficiency; 2.6.2.2 Diode Parameters; 2.6.2.3 Open Circuit Voltage; 2.6.2.4 Fill Factor; 2.6.3 Capacitance-Voltage Analysis; 2.6.4 Admittance Spectroscopy; 3 Design Rules for Heterostructure Solar Cells and Modules; 3.1 Absorber Bandgap; 3.2 Band Alignment; 3.3 Emitter Doping and Doping Ratio; 3.4 Fermi Level Pinning; 3.5 Absorber Doping; 3.6 Absorber Thickness; 3.7 Grain Boundaries; 3.8 Back Contact Barrier; 3.9 Buffer Thickness; 3.10 Front Surface Gradient 3.11 Back Surface Gradients3.12 Monolithic Series Interconnection; 4 Thin Film Material Properties; 4.1 AII-BVI Absorbers; 4.1.1 Physico-Chemical Properties; 4.1.2 Lattice Dynamics; 4.1.3 Electronic Properties; 4.1.3.1 Practical Doping Limits; 4.1.3.2 Defect Spectroscopy; 4.1.3.3 Minority Carrier Lifetime; 4.1.4 Optical Properties; 4.1.4.1 CdTe; 4.1.4.2 Multinary Phases; 4.1.5 Surface Properties; 4.1.6 Properties of Grain Boundaries; 4.2 AI-BIII-CVI 2 Absorbers; 4.2.1 Physico-Chemical Properties; 4.2.1.1 Ternary Phase Diagrams; 4.2.1.2 Multinary Phases; 4.2.1.3 Diffusion Coefficients 4.2.2 Lattice Dynamics |
| Record Nr. | UNINA-9910130882403321 |
|
Scheer Roland
|
||
| Weinheim, Germany, : Wiley-VCH Verlag GmbH & Co., 2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Chalcogenide photovoltaics [[electronic resource] ] : physics, technologies, and thin film devices / / Roland Scheer and Hans-Werner Schock
| Chalcogenide photovoltaics [[electronic resource] ] : physics, technologies, and thin film devices / / Roland Scheer and Hans-Werner Schock |
| Autore | Scheer Roland |
| Pubbl/distr/stampa | Weinheim, Germany, : Wiley-VCH Verlag GmbH & Co., 2011 |
| Descrizione fisica | 1 online resource (386 p.) |
| Disciplina | 621.31244 |
| Altri autori (Persone) | SchockH. W (Hans-Werner) |
| Soggetto topico |
Photovoltaic cells - Materials
Chalcogenides Compound semiconductors |
| ISBN |
1-283-30246-2
9786613302465 3-527-63371-5 3-527-63370-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Chalcogenide Photovoltaics; Contents; Preface; Symbols and Acronyms; 1 Introduction; 1.1 History of Cu(In,Ga)(S,Se)2 Solar Cells; 1.1.1 Milestones of Cu(In,Ga)(S,Se)2 Development; 1.2 History of CdTe Solar Cells; 1.2.1 Milestones of CdTe Development; 1.3 Prospects of Chalcogenide Photovoltaics; 2 Thin Film Heterostructures; 2.1 Energies and Potentials; 2.2 Charge Densities and Fluxes; 2.3 Energy Band Diagrams; 2.3.1 Rules and Conventions; 2.3.2 Absorber/Window; 2.3.3 Absorber/Buffer/Window; 2.3.4 Interface States; 2.3.5 Interface Dipoles; 2.3.6 Deep Bulk States; 2.3.7 Bandgap Gradients
2.4 Diode Currents2.4.1 Superposition Principle and Shifting Approximation; 2.4.2 Regions of Recombination; 2.4.3 Radiative Recombination; 2.4.4 Auger Recombination; 2.4.5 Defect Related Recombination; 2.4.5.1 SCR Recombination; 2.4.5.2 QNR Recombination; 2.4.5.3 Back Surface Recombination; 2.4.5.4 Interface Recombination; 2.4.6 Parallel Processes; 2.4.6.1 SCR and QNR Recombination; 2.4.6.2 SCR and IF Recombination; 2.4.7 Barriers for Diode Current; 2.4.8 Bias Dependence; 2.4.9 Non-Homogeneities; 2.5 Light Generated Currents; 2.5.1 Generation Currents; 2.5.2 Generation Function 2.5.3 Photo Current2.5.4 Collection Function; 2.5.4.1 Absorber Quasi Neutral Region; 2.5.4.2 QNR with Graded Bandgap; 2.5.4.3 QNR with Back Surface Field; 2.5.4.4 Absorber Space Charge Region; 2.5.4.5 Buffer Layer; 2.5.4.6 Simulating the Collection Function; 2.5.5 Quantum Efficiency and Charge Collection Efficiency; 2.5.6 Barriers for Photo Current; 2.5.7 Voltage Dependence of Photo Current; 2.5.7.1 Width of SCR; 2.5.7.2 Interface Recombination; 2.5.7.3 Photo Current Barriers; 2.6 Device Analysis and Parameters; 2.6.1 Equivalent Circuits; 2.6.1.1 DC Equivalent Circuit 2.6.1.2 AC Equivalent Circuit2.6.1.3 Module Equivalent Circuit; 2.6.2 Current-Voltage Analysis; 2.6.2.1 External Collection Efficiency; 2.6.2.2 Diode Parameters; 2.6.2.3 Open Circuit Voltage; 2.6.2.4 Fill Factor; 2.6.3 Capacitance-Voltage Analysis; 2.6.4 Admittance Spectroscopy; 3 Design Rules for Heterostructure Solar Cells and Modules; 3.1 Absorber Bandgap; 3.2 Band Alignment; 3.3 Emitter Doping and Doping Ratio; 3.4 Fermi Level Pinning; 3.5 Absorber Doping; 3.6 Absorber Thickness; 3.7 Grain Boundaries; 3.8 Back Contact Barrier; 3.9 Buffer Thickness; 3.10 Front Surface Gradient 3.11 Back Surface Gradients3.12 Monolithic Series Interconnection; 4 Thin Film Material Properties; 4.1 AII-BVI Absorbers; 4.1.1 Physico-Chemical Properties; 4.1.2 Lattice Dynamics; 4.1.3 Electronic Properties; 4.1.3.1 Practical Doping Limits; 4.1.3.2 Defect Spectroscopy; 4.1.3.3 Minority Carrier Lifetime; 4.1.4 Optical Properties; 4.1.4.1 CdTe; 4.1.4.2 Multinary Phases; 4.1.5 Surface Properties; 4.1.6 Properties of Grain Boundaries; 4.2 AI-BIII-CVI 2 Absorbers; 4.2.1 Physico-Chemical Properties; 4.2.1.1 Ternary Phase Diagrams; 4.2.1.2 Multinary Phases; 4.2.1.3 Diffusion Coefficients 4.2.2 Lattice Dynamics |
| Record Nr. | UNINA-9910829904203321 |
|
Scheer Roland
|
||
| Weinheim, Germany, : Wiley-VCH Verlag GmbH & Co., 2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Chalcogenide photovoltaics : physics, technologies, and thin film devices / / Roland Scheer and Hans-Werner Schock
| Chalcogenide photovoltaics : physics, technologies, and thin film devices / / Roland Scheer and Hans-Werner Schock |
| Autore | Scheer Roland |
| Pubbl/distr/stampa | Weinheim, Germany, : Wiley-VCH Verlag GmbH & Co., 2011 |
| Descrizione fisica | 1 online resource (386 p.) |
| Disciplina | 621.31244 |
| Altri autori (Persone) | SchockH. W (Hans-Werner) |
| Soggetto topico |
Photovoltaic cells - Materials
Chalcogenides Compound semiconductors |
| ISBN |
1-283-30246-2
9786613302465 3-527-63371-5 3-527-63370-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Chalcogenide Photovoltaics; Contents; Preface; Symbols and Acronyms; 1 Introduction; 1.1 History of Cu(In,Ga)(S,Se)2 Solar Cells; 1.1.1 Milestones of Cu(In,Ga)(S,Se)2 Development; 1.2 History of CdTe Solar Cells; 1.2.1 Milestones of CdTe Development; 1.3 Prospects of Chalcogenide Photovoltaics; 2 Thin Film Heterostructures; 2.1 Energies and Potentials; 2.2 Charge Densities and Fluxes; 2.3 Energy Band Diagrams; 2.3.1 Rules and Conventions; 2.3.2 Absorber/Window; 2.3.3 Absorber/Buffer/Window; 2.3.4 Interface States; 2.3.5 Interface Dipoles; 2.3.6 Deep Bulk States; 2.3.7 Bandgap Gradients
2.4 Diode Currents2.4.1 Superposition Principle and Shifting Approximation; 2.4.2 Regions of Recombination; 2.4.3 Radiative Recombination; 2.4.4 Auger Recombination; 2.4.5 Defect Related Recombination; 2.4.5.1 SCR Recombination; 2.4.5.2 QNR Recombination; 2.4.5.3 Back Surface Recombination; 2.4.5.4 Interface Recombination; 2.4.6 Parallel Processes; 2.4.6.1 SCR and QNR Recombination; 2.4.6.2 SCR and IF Recombination; 2.4.7 Barriers for Diode Current; 2.4.8 Bias Dependence; 2.4.9 Non-Homogeneities; 2.5 Light Generated Currents; 2.5.1 Generation Currents; 2.5.2 Generation Function 2.5.3 Photo Current2.5.4 Collection Function; 2.5.4.1 Absorber Quasi Neutral Region; 2.5.4.2 QNR with Graded Bandgap; 2.5.4.3 QNR with Back Surface Field; 2.5.4.4 Absorber Space Charge Region; 2.5.4.5 Buffer Layer; 2.5.4.6 Simulating the Collection Function; 2.5.5 Quantum Efficiency and Charge Collection Efficiency; 2.5.6 Barriers for Photo Current; 2.5.7 Voltage Dependence of Photo Current; 2.5.7.1 Width of SCR; 2.5.7.2 Interface Recombination; 2.5.7.3 Photo Current Barriers; 2.6 Device Analysis and Parameters; 2.6.1 Equivalent Circuits; 2.6.1.1 DC Equivalent Circuit 2.6.1.2 AC Equivalent Circuit2.6.1.3 Module Equivalent Circuit; 2.6.2 Current-Voltage Analysis; 2.6.2.1 External Collection Efficiency; 2.6.2.2 Diode Parameters; 2.6.2.3 Open Circuit Voltage; 2.6.2.4 Fill Factor; 2.6.3 Capacitance-Voltage Analysis; 2.6.4 Admittance Spectroscopy; 3 Design Rules for Heterostructure Solar Cells and Modules; 3.1 Absorber Bandgap; 3.2 Band Alignment; 3.3 Emitter Doping and Doping Ratio; 3.4 Fermi Level Pinning; 3.5 Absorber Doping; 3.6 Absorber Thickness; 3.7 Grain Boundaries; 3.8 Back Contact Barrier; 3.9 Buffer Thickness; 3.10 Front Surface Gradient 3.11 Back Surface Gradients3.12 Monolithic Series Interconnection; 4 Thin Film Material Properties; 4.1 AII-BVI Absorbers; 4.1.1 Physico-Chemical Properties; 4.1.2 Lattice Dynamics; 4.1.3 Electronic Properties; 4.1.3.1 Practical Doping Limits; 4.1.3.2 Defect Spectroscopy; 4.1.3.3 Minority Carrier Lifetime; 4.1.4 Optical Properties; 4.1.4.1 CdTe; 4.1.4.2 Multinary Phases; 4.1.5 Surface Properties; 4.1.6 Properties of Grain Boundaries; 4.2 AI-BIII-CVI 2 Absorbers; 4.2.1 Physico-Chemical Properties; 4.2.1.1 Ternary Phase Diagrams; 4.2.1.2 Multinary Phases; 4.2.1.3 Diffusion Coefficients 4.2.2 Lattice Dynamics |
| Record Nr. | UNINA-9911019273203321 |
|
Scheer Roland
|
||
| Weinheim, Germany, : Wiley-VCH Verlag GmbH & Co., 2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Chalcogenides : Preparation and Applications / / edited by Dhanasekaran Vikraman
| Chalcogenides : Preparation and Applications / / edited by Dhanasekaran Vikraman |
| Pubbl/distr/stampa | London, United Kingdom : , : IntechOpen, , 2022 |
| Descrizione fisica | 1 online resource (176 pages) : illustrations |
| Disciplina | 546.72 |
| Soggetto topico | Chalcogenides |
| ISBN | 1-80355-661-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | 1. Recent Developments on the Properties of Chalcogenide Thin Films -- 2. Contribution to the Calculation of Physical Properties of BeSe Semiconductor -- 3. Thickness Dependent Spectroscopic Studies in 2D PtSe2 -- 4. Functional Mimics of Glutathione Peroxidase: Spirochalcogenuranes, Mechanism and Its Antioxidant Activity -- 5. Two-Dimensional Transition Metal Dichalcogenide as Electron Transport Layer of Perovskite Solar Cells -- 6. Advanced Chalcogen Cathode Materials for Lithium-Ion Batteries -- 7. Temperature-Dependent Evaluation of Charge Carriers and Terahertz Generation in Bismuth and Antimony-Based Chalcogenides -- 8. Recording of Micro/Nanosized Elements on Thin Films of Glassy Chalcogenide Semiconductors by Optical Radiation. |
| Altri titoli varianti | Chalcogenides |
| Record Nr. | UNINA-9910633979503321 |
| London, United Kingdom : , : IntechOpen, , 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Chalcogenides : preparation and applications / / edited by Dhanasekaran Vikraman
| Chalcogenides : preparation and applications / / edited by Dhanasekaran Vikraman |
| Pubbl/distr/stampa | London : , : IntechOpen, , 2022 |
| Descrizione fisica | 1 online resource (176 pages) |
| Disciplina | 546.72 |
| Soggetto topico | Chalcogenides |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | 1. Recent Developments on the Properties of Chalcogenide Thin Films -- 2. Contribution to the Calculation of Physical Properties of BeSe Semiconductor -- 3. Thickness Dependent Spectroscopic Studies in 2D PtSe2 -- 4. Functional Mimics of Glutathione Peroxidase: Spirochalcogenuranes, Mechanism and Its Antioxidant Activity -- 5. Two-Dimensional Transition Metal Dichalcogenide as Electron Transport Layer of Perovskite Solar Cells -- 6. Advanced Chalcogen Cathode Materials for Lithium-Ion Batteries -- 7. Temperature-Dependent Evaluation of Charge Carriers and Terahertz Generation in Bismuth and Antimony-Based Chalcogenides -- 8. Recording of Micro/Nanosized Elements on Thin Films of Glassy Chalcogenide Semiconductors by Optical Radiation. |
| Record Nr. | UNINA-9910687973503321 |
| London : , : IntechOpen, , 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Earth-abundant materials for solar cells : Cu2-II-IV-VI4 semiconductors / / Sadao Adachi
| Earth-abundant materials for solar cells : Cu2-II-IV-VI4 semiconductors / / Sadao Adachi |
| Autore | Adachi Sadao <1950-> |
| Pubbl/distr/stampa | Chichester, England : , : Wiley, , 2015 |
| Descrizione fisica | 1 online resource (477 pages) : illustrations |
| Disciplina | 621.31/244 |
| Soggetto topico |
Solar cells - Materials
Semiconductors - Materials Chalcogenides |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-119-05278-5
1-119-05281-5 1-119-05283-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Structural properties -- Thermal properties -- Elastic, mechanical and lattice dynamic properties -- Electronic energy-band structure -- Optical properties -- Carrier transport properties. |
| Record Nr. | UNINA-9910131529903321 |
|
Adachi Sadao <1950->
|
||
| Chichester, England : , : Wiley, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Earth-abundant materials for solar cells : Cu2-II-IV-VI4 semiconductors / / Sadao Adachi
| Earth-abundant materials for solar cells : Cu2-II-IV-VI4 semiconductors / / Sadao Adachi |
| Autore | Adachi Sadao <1950-> |
| Pubbl/distr/stampa | Chichester, England : , : Wiley, , 2015 |
| Descrizione fisica | 1 online resource (477 pages) : illustrations |
| Disciplina | 621.31/244 |
| Soggetto topico |
Solar cells - Materials
Semiconductors - Materials Chalcogenides |
| ISBN |
1-119-05278-5
1-119-05281-5 1-119-05283-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Structural properties -- Thermal properties -- Elastic, mechanical and lattice dynamic properties -- Electronic energy-band structure -- Optical properties -- Carrier transport properties. |
| Record Nr. | UNINA-9910830814903321 |
|
Adachi Sadao <1950->
|
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| Chichester, England : , : Wiley, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Semiconducting II-VI, IV-VI, and V-VI compounds / N.R. Abrikosov...[et al.] ; translated from the russian by A. Tybulewicz
| Semiconducting II-VI, IV-VI, and V-VI compounds / N.R. Abrikosov...[et al.] ; translated from the russian by A. Tybulewicz |
| Autore | Abrikosov, N.R. |
| Pubbl/distr/stampa | New York : Plenum Press, 1969 |
| Descrizione fisica | viii, 252 p. : ill. ; 24 cm. |
| Altri autori (Persone) | Tybulewicz, Albin |
| Soggetto topico |
Chalcogenides
Phase rule and equilibrium Semiconductors |
| Classificazione |
53.7
53.8.3 53.8.22 53.8.27 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISALENTO-991001235709707536 |
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Abrikosov, N.R.
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| New York : Plenum Press, 1969 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. del Salento | ||
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