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1995 IEEE Bipolar-BiCMOS Circuits and Technology Meeting Proceedings
| 1995 IEEE Bipolar-BiCMOS Circuits and Technology Meeting Proceedings |
| Pubbl/distr/stampa | [Place of publication not identified], : IEEE, 1995 |
| Descrizione fisica | 1 online resource (218 pages) |
| Disciplina | 621.381528 |
| Soggetto topico | Bipolar transistors |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910872777003321 |
| [Place of publication not identified], : IEEE, 1995 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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1995 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO
| 1995 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO |
| Pubbl/distr/stampa | [Place of publication not identified], : IEEE Service Center, 1995 |
| Soggetto topico |
Compound semiconductors
Optoelectronic devices Microwave integrated circuits Millimeter wave devices Bipolar transistors Electrical & Computer Engineering Electrical Engineering Engineering & Applied Sciences |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996204475403316 |
| [Place of publication not identified], : IEEE Service Center, 1995 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
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1995 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO
| 1995 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO |
| Pubbl/distr/stampa | [Place of publication not identified], : IEEE Service Center, 1995 |
| Soggetto topico |
Compound semiconductors
Optoelectronic devices Microwave integrated circuits Millimeter wave devices Bipolar transistors Electrical & Computer Engineering Electrical Engineering Engineering & Applied Sciences |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910872773603321 |
| [Place of publication not identified], : IEEE Service Center, 1995 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
1998 IEEE Bipolar/BICMOS Circuits and Technology Meeting Proceedings
| 1998 IEEE Bipolar/BICMOS Circuits and Technology Meeting Proceedings |
| Pubbl/distr/stampa | [Place of publication not identified], : I E E E, 1998 |
| Descrizione fisica | 1 online resource (250 pages) |
| Disciplina | 621.39732 |
| Soggetto topico |
Bipolar integrated circuits
Bipolar transistors |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910872883103321 |
| [Place of publication not identified], : I E E E, 1998 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
| 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting |
| Pubbl/distr/stampa | [Place of publication not identified], : IEEE, 2011 |
| Descrizione fisica | 1 online resource : illustrations |
| Disciplina | 621.39732 |
| Soggetto topico |
Bipolar integrated circuits
Bipolar transistors |
| ISBN |
9781612841663
161284166X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910141186903321 |
| [Place of publication not identified], : IEEE, 2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
| 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting |
| Pubbl/distr/stampa | [Place of publication not identified], : IEEE, 2012 |
| Descrizione fisica | 1 online resource : illustrations |
| Disciplina | 621.39732 |
| Soggetto topico |
Bipolar integrated circuits
Bipolar transistors |
| ISBN |
9781467330213
1467330213 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910141373203321 |
| [Place of publication not identified], : IEEE, 2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) / / Institute of Electrical and Electronics Engineers (IEEE)
| 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) / / Institute of Electrical and Electronics Engineers (IEEE) |
| Pubbl/distr/stampa | Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers (IEEE), , 2019 |
| Descrizione fisica | 1 online resource (various pagings) : illustrations |
| Disciplina | 621.39732 |
| Soggetto topico |
Bipolar integrated circuits
Bipolar transistors |
| ISBN | 1-7281-0586-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium |
| Record Nr. | UNINA-9910389505703321 |
| Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers (IEEE), , 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) / / Institute of Electrical and Electronics Engineers (IEEE)
| 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) / / Institute of Electrical and Electronics Engineers (IEEE) |
| Pubbl/distr/stampa | Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers (IEEE), , 2019 |
| Descrizione fisica | 1 online resource (various pagings) : illustrations |
| Disciplina | 621.39732 |
| Soggetto topico |
Bipolar integrated circuits
Bipolar transistors |
| ISBN | 1-7281-0586-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium |
| Record Nr. | UNISA-996574614403316 |
| Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers (IEEE), , 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
Analog Devices and Circuits 1 : Analog Devices
| Analog Devices and Circuits 1 : Analog Devices |
| Autore | Gontrand Christian |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Newark : , : John Wiley & Sons, Incorporated, , 2024 |
| Descrizione fisica | 1 online resource (260 pages) |
| Disciplina | 621.3815 |
| Soggetto topico |
Analog electronic systems
Bipolar transistors |
| ISBN |
9781394255474
1394255470 9781394255450 1394255454 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Cover -- Title Page -- Copyright Page -- Contents -- Preface -- Introduction -- Chapter 1. Bipolar Junction Transistor -- 1.1. Introduction -- 1.1.1. A schematic technological embodiment of an integrated bipolar junction transistor -- 1.2. Transistor effect -- 1.2.1. Flows and currents -- 1.2.2. Compromises for bipolar junction transistor -- 1.2.3. Configurations and associated current gains -- 1.3. Bipolar junction transistor: some calculations -- 1.3.1. Various modes of operation -- 1.4. The NPN transistor -- Ebers-Moll model (1954: Jewell James Ebers and John L. Moll) -- 1.4.1. Gummel curves -- 1.4.2. Consideration of second-order effects for the static model -- 1.4.3. Early curves -- 1.4.4. Base width modulation -- Early effect -- 1.4.5. Ebers-Moll model wide signals -- 1.4.6. Current gain -- 1.5. Simple bipolar junction transistor model -- 1.6. Network of static characteristics of the bipolar junction transistor -- 1.6.1. Common emitter configuration -- 1.6.2. Common emitter configuration with emitter degeneration -- 1.7. Some applications -- 1.7.1. Current mirrors -- 1.7.2. Differential pair -- 1.7.3. Output stage -- 1.8. Application: operational amplifier -- 1.9. BiCMOS -- Chapter 2. MOSFET -- 2.1. Introduction -- 2.1.1. Base structure -- 2.1.2. Working principle -- 2.2. MOS capability: electric model and curve C(V) -- 2.3. Different types of MOS transistors -- 2.4. A CMOS technological process -- 2.5. Electric modeling of the NMOS enhancement transistor -- 2.6. Off state -- 2.7. Linear or ohmic or unsaturated regime -- 2.7.1. Saturation regime -- 2.7.2. High saturation velocity -- 2.7.3. Static characteristics -- 2.8. Applications -- 2.8.1. Digital inverter -- 2.8.2. Active resistor -- 2.8.3. MOS Single current mirror -- 2.8.4. MOS differential amplifier -- 2.9. Explained technological steps of a CMOS.
Chapter 3. Devices Dedicated to Radio Frequency: Toward Nanoelectronics -- 3.1. Introduction -- 3.2. Model for HBT SiGeC and device structure -- 3.2.1. Modeling the drift-diffusion equation -- 3.3. MOS of the future? -- 3.3.1. Introduction -- 3.3.2. DGMOS -- 3.3.3. Transport in nanoscale MOSFETs -- 3.3.4. Numerical methods -- 3.4. Conclusion -- 3.5. MATLAB use -- 3.5.1. Computer-aided modelling and simulations: synopsis -- 3.5.2. Calculation of the second elementary member ρ1 -- 3.6. Conclusion -- Appendix -- References -- Index -- EULA. |
| Record Nr. | UNINA-9911018803903321 |
Gontrand Christian
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| Newark : , : John Wiley & Sons, Incorporated, , 2024 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Bipolar/BiCMOS Circuits and Technology Meeting Proceedings, 1999
| Bipolar/BiCMOS Circuits and Technology Meeting Proceedings, 1999 |
| Pubbl/distr/stampa | [Place of publication not identified], : I E E E, 1999 |
| Descrizione fisica | 1 online resource (182 pages) : illustrations |
| Disciplina | 621.39732 |
| Soggetto topico |
Bipolar integrated circuits
Bipolar transistors |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910872679403321 |
| [Place of publication not identified], : I E E E, 1999 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Soggetto topico
-
Bipolar transistors
(28)
- Bipolar integrated circuits (9)
- Germanium (4)
- Silicon (4)
- Junction transistors (3)