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Biblioteca

MARC Lista (tabellare)
1995 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO
1995 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO
Pubbl/distr/stampa [Place of publication not identified], : IEEE Service Center, 1995
Soggetto topico Compound semiconductors
Optoelectronic devices
Microwave integrated circuits
Millimeter wave devices
Bipolar transistors
Electrical & Computer Engineering
Electrical Engineering
Engineering & Applied Sciences
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNISA-996204475403316
[Place of publication not identified], : IEEE Service Center, 1995
Materiale a stampa
Lo trovi qui: Univ. di Salerno
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2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) / / Institute of Electrical and Electronics Engineers (IEEE)
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) / / Institute of Electrical and Electronics Engineers (IEEE)
Pubbl/distr/stampa Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers (IEEE), , 2019
Descrizione fisica 1 online resource (various pagings) : illustrations
Disciplina 621.39732
Soggetto topico Bipolar integrated circuits
Bipolar transistors
ISBN 1-7281-0586-2
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium
Record Nr. UNINA-9910389505703321
Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers (IEEE), , 2019
Materiale a stampa
Lo trovi qui: Univ. Federico II
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2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) / / Institute of Electrical and Electronics Engineers (IEEE)
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) / / Institute of Electrical and Electronics Engineers (IEEE)
Pubbl/distr/stampa Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers (IEEE), , 2019
Descrizione fisica 1 online resource (various pagings) : illustrations
Disciplina 621.39732
Soggetto topico Bipolar integrated circuits
Bipolar transistors
ISBN 1-7281-0586-2
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium
Record Nr. UNISA-996574614403316
Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers (IEEE), , 2019
Materiale a stampa
Lo trovi qui: Univ. di Salerno
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Compact hierarchial bipolar transistor modeling with HICUM [[electronic resource] /] / Michael Schröter, Anjan Chakravorty
Compact hierarchial bipolar transistor modeling with HICUM [[electronic resource] /] / Michael Schröter, Anjan Chakravorty
Autore Schröter Michael
Pubbl/distr/stampa Hackensack, N.J., : World Scientific, 2010
Descrizione fisica 1 online resource (740 p.)
Disciplina 621.381528
Altri autori (Persone) ChakravortyAnjan
Collana ASSET : international series on advances in solid state electronics and technology
Soggetto topico Bipolar transistors
Soggetto genere / forma Electronic books.
ISBN 1-283-14370-4
9786613143709
981-4273-22-8
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Foreword; Biographies; Preface; Table of Contents; List of Often Used Acronyms and Symbols; Chapter 1 Introduction; Chapter 2 Device Modeling Overview; Chapter 3 Theory of Homojunction Bipolar Transistors; Chapter 4 Advanced Theory; Chapter 5 Geometry (Layout) Scaling; Chapter 6 Temperature Effects; Chapter 7 Compact Noise Modeling; Chapter 8 HICUM Level2; Chapter 9 Parameter Determination for HICUM/L2; Chapter 10 Model Hierarchy; Chapter 11 Application Examples; Chapter 12 Future Trends; Index
Record Nr. UNINA-9910461618103321
Schröter Michael  
Hackensack, N.J., : World Scientific, 2010
Materiale a stampa
Lo trovi qui: Univ. Federico II
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Compact hierarchial bipolar transistor modeling with HICUM [[electronic resource] /] / Michael Schröter, Anjan Chakravorty
Compact hierarchial bipolar transistor modeling with HICUM [[electronic resource] /] / Michael Schröter, Anjan Chakravorty
Autore Schröter Michael
Pubbl/distr/stampa Hackensack, N.J., : World Scientific, 2010
Descrizione fisica 1 online resource (740 p.)
Disciplina 621.381528
Altri autori (Persone) ChakravortyAnjan
Collana ASSET : international series on advances in solid state electronics and technology
Soggetto topico Bipolar transistors
ISBN 1-283-14370-4
9786613143709
981-4273-22-8
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Foreword; Biographies; Preface; Table of Contents; List of Often Used Acronyms and Symbols; Chapter 1 Introduction; Chapter 2 Device Modeling Overview; Chapter 3 Theory of Homojunction Bipolar Transistors; Chapter 4 Advanced Theory; Chapter 5 Geometry (Layout) Scaling; Chapter 6 Temperature Effects; Chapter 7 Compact Noise Modeling; Chapter 8 HICUM Level2; Chapter 9 Parameter Determination for HICUM/L2; Chapter 10 Model Hierarchy; Chapter 11 Application Examples; Chapter 12 Future Trends; Index
Record Nr. UNINA-9910789405203321
Schröter Michael  
Hackensack, N.J., : World Scientific, 2010
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Compact hierarchial bipolar transistor modeling with HICUM [[electronic resource] /] / Michael Schröter, Anjan Chakravorty
Compact hierarchial bipolar transistor modeling with HICUM [[electronic resource] /] / Michael Schröter, Anjan Chakravorty
Autore Schröter Michael
Pubbl/distr/stampa Hackensack, N.J., : World Scientific, 2010
Descrizione fisica 1 online resource (740 p.)
Disciplina 621.381528
Altri autori (Persone) ChakravortyAnjan
Collana ASSET : international series on advances in solid state electronics and technology
Soggetto topico Bipolar transistors
ISBN 1-283-14370-4
9786613143709
981-4273-22-8
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Foreword; Biographies; Preface; Table of Contents; List of Often Used Acronyms and Symbols; Chapter 1 Introduction; Chapter 2 Device Modeling Overview; Chapter 3 Theory of Homojunction Bipolar Transistors; Chapter 4 Advanced Theory; Chapter 5 Geometry (Layout) Scaling; Chapter 6 Temperature Effects; Chapter 7 Compact Noise Modeling; Chapter 8 HICUM Level2; Chapter 9 Parameter Determination for HICUM/L2; Chapter 10 Model Hierarchy; Chapter 11 Application Examples; Chapter 12 Future Trends; Index
Record Nr. UNINA-9910819617503321
Schröter Michael  
Hackensack, N.J., : World Scientific, 2010
Materiale a stampa
Lo trovi qui: Univ. Federico II
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Fundamentals of III-V devices : HBTs, MESFETs, and HFETs/HEMTs / William Liu
Fundamentals of III-V devices : HBTs, MESFETs, and HFETs/HEMTs / William Liu
Autore Liu, William
Pubbl/distr/stampa New York [etc] : Wiley e Sons, c1999
Descrizione fisica xii, 505 p. : ill. ; 25 cm
Disciplina 621.3815
Soggetto topico Bipolar transistors
Field-effect transistors
Metal semiconductor field-effect transistors
ISBN 0471297003
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNISALENTO-991001158979707536
Liu, William  
New York [etc] : Wiley e Sons, c1999
Materiale a stampa
Lo trovi qui: Univ. del Salento
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Heterojunction bipolar transistors for circuit design : microwave modelling and parameter extraction / / Jianjun Gao
Heterojunction bipolar transistors for circuit design : microwave modelling and parameter extraction / / Jianjun Gao
Autore Gao Jianjun <1968->
Pubbl/distr/stampa Singapore : , : John Wiley and Sons, Incorporated, , 2015
Descrizione fisica 1 online resource (278 p.)
Disciplina 621.3815/28
Soggetto topico Bipolar transistors
Heterojunctions
Electronic circuit design
Microwave measurements
ISBN 1-118-92153-4
1-118-92155-0
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Title Page; Copyright Page; Contents; About the Author; Preface; Acknowledgments; Nomenclature; Chapter 1 Introduction; 1.1 Overview of Heterojunction Bipolar Transistors; 1.2 Modeling and Measurement for HBT; 1.3 Organization of This Book; References; Chapter 2 Basic Concept of Microwave Device Modeling; 2.1 Signal Parameters; 2.1.1 Low-Frequency Parameters; 2.1.2 S-Parameters; 2.2 Representation of Noisy Two-Port Network; 2.2.1 Noise Matrix; 2.2.2 Noise Parameters; 2.3 Basic Circuit Elements; 2.3.1 Resistance; 2.3.2 Capacitance; 2.3.3 Inductance; 2.3.4 Controlled Sources
2.3.5 Ideal Transmission Line2.4 π- and T-Type Networks; 2.4.1 T-Type Network; 2.4.2 π-Type Network; 2.4.3 Relationship between π- and T-Type Networks; 2.5 Deembedding Method; 2.5.1 Parallel Deembedding; 2.5.2 Series Deembedding; 2.5.3 Cascading Deembedding; 2.6 Basic Methods of Parameter Extraction; 2.6.1 Determination of Capacitance; 2.6.2 Determination of Inductance; 2.6.3 Determination of Resistance; 2.7 Summary; References; Chapter 3 Modeling and Parameter Extraction Methods of Bipolar Junction Transistor; 3.1 PN Junction; 3.2 PN Junction Diode; 3.2.1 Basic Concept
3.2.2 Equivalent Circuit Model3.2.3 Determination of Model Parameters; 3.3 BJT Physical Operation; 3.3.1 Device Structure; 3.3.2 The Modes of Operation; 3.3.3 Base-Width Modulation; 3.3.4 High Injection and Current Crowding; 3.4 Equivalent Circuit Model; 3.4.1 E-M Model; 3.4.2 G-P Model; 3.4.3 Noise Model; 3.5 Microwave Performance; 3.5.1 Transition Frequency; 3.5.2 Common-Emitter Configuration; 3.5.3 Common-Base Configuration; 3.5.4 Common-Collector Configuration; 3.5.5 Summary and Comparisons; 3.6 Summary; References; Chapter 4 Basic Principle of HBT; 4.1 Semiconductor Heterojunction
4.2 HBT Device4.2.1 GaAs HBT; 4.2.2 InP HBT; 4.3 Summary; References; Chapter 5 Small-Signal Modeling and Parameter Extraction of HBT; 5.1 Small-Signal Circuit Model; 5.1.1 Pad Structure; 5.1.2 T-Type Circuit Model; 5.1.3 π-Type Circuit Model; 5.1.4 Unilateral Power Gain; 5.1.5 fT and fmax; 5.2 HBT Device Structure; 5.3 Extraction Method of PAD Capacitances; 5.3.1 Open Test Structure Method; 5.3.2 Pinch-Off Method; 5.4 Extraction Method of Extrinsic Inductances; 5.4.1 Short Test Structure Method; 5.4.2 Open-Collector Method; 5.5 Extraction Method of Extrinsic Resistance
5.5.1 Z Parameter Method5.5.2 Cold-HBT Method; 5.5.3 Open-Collector Method; 5.6 Extraction Method of Intrinsic Resistance; 5.6.1 Direct Extraction Method; 5.6.2 Hybrid Method; 5.7 Semianalysis Method; 5.8 Summary; References; Chapter 6 Large-Signal Equivalent Circuit Modeling of HBT; 6.1 Linear and Nonlinear; 6.1.1 Definition; 6.1.2 Nonlinear Lumped Elements; 6.2 Large Signal and Small Signal; 6.3 Thermal Resistance; 6.3.1 Definition; 6.3.2 Equivalent Circuit Model; 6.3.3 Determination of Thermal Resistance; 6.4 Nonlinear HBT Modeling; 6.4.1 VBIC Model; 6.4.2 Agilent Model
6.4.3 Macromodeling Method
Record Nr. UNINA-9910140452403321
Gao Jianjun <1968->  
Singapore : , : John Wiley and Sons, Incorporated, , 2015
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Heterojunction bipolar transistors for circuit design : microwave modelling and parameter extraction / / Jianjun Gao
Heterojunction bipolar transistors for circuit design : microwave modelling and parameter extraction / / Jianjun Gao
Autore Gao Jianjun <1968->
Pubbl/distr/stampa Singapore : , : John Wiley and Sons, Incorporated, , 2015
Descrizione fisica 1 online resource (278 p.)
Disciplina 621.3815/28
Soggetto topico Bipolar transistors
Heterojunctions
Electronic circuit design
Microwave measurements
ISBN 1-118-92153-4
1-118-92155-0
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Title Page; Copyright Page; Contents; About the Author; Preface; Acknowledgments; Nomenclature; Chapter 1 Introduction; 1.1 Overview of Heterojunction Bipolar Transistors; 1.2 Modeling and Measurement for HBT; 1.3 Organization of This Book; References; Chapter 2 Basic Concept of Microwave Device Modeling; 2.1 Signal Parameters; 2.1.1 Low-Frequency Parameters; 2.1.2 S-Parameters; 2.2 Representation of Noisy Two-Port Network; 2.2.1 Noise Matrix; 2.2.2 Noise Parameters; 2.3 Basic Circuit Elements; 2.3.1 Resistance; 2.3.2 Capacitance; 2.3.3 Inductance; 2.3.4 Controlled Sources
2.3.5 Ideal Transmission Line2.4 π- and T-Type Networks; 2.4.1 T-Type Network; 2.4.2 π-Type Network; 2.4.3 Relationship between π- and T-Type Networks; 2.5 Deembedding Method; 2.5.1 Parallel Deembedding; 2.5.2 Series Deembedding; 2.5.3 Cascading Deembedding; 2.6 Basic Methods of Parameter Extraction; 2.6.1 Determination of Capacitance; 2.6.2 Determination of Inductance; 2.6.3 Determination of Resistance; 2.7 Summary; References; Chapter 3 Modeling and Parameter Extraction Methods of Bipolar Junction Transistor; 3.1 PN Junction; 3.2 PN Junction Diode; 3.2.1 Basic Concept
3.2.2 Equivalent Circuit Model3.2.3 Determination of Model Parameters; 3.3 BJT Physical Operation; 3.3.1 Device Structure; 3.3.2 The Modes of Operation; 3.3.3 Base-Width Modulation; 3.3.4 High Injection and Current Crowding; 3.4 Equivalent Circuit Model; 3.4.1 E-M Model; 3.4.2 G-P Model; 3.4.3 Noise Model; 3.5 Microwave Performance; 3.5.1 Transition Frequency; 3.5.2 Common-Emitter Configuration; 3.5.3 Common-Base Configuration; 3.5.4 Common-Collector Configuration; 3.5.5 Summary and Comparisons; 3.6 Summary; References; Chapter 4 Basic Principle of HBT; 4.1 Semiconductor Heterojunction
4.2 HBT Device4.2.1 GaAs HBT; 4.2.2 InP HBT; 4.3 Summary; References; Chapter 5 Small-Signal Modeling and Parameter Extraction of HBT; 5.1 Small-Signal Circuit Model; 5.1.1 Pad Structure; 5.1.2 T-Type Circuit Model; 5.1.3 π-Type Circuit Model; 5.1.4 Unilateral Power Gain; 5.1.5 fT and fmax; 5.2 HBT Device Structure; 5.3 Extraction Method of PAD Capacitances; 5.3.1 Open Test Structure Method; 5.3.2 Pinch-Off Method; 5.4 Extraction Method of Extrinsic Inductances; 5.4.1 Short Test Structure Method; 5.4.2 Open-Collector Method; 5.5 Extraction Method of Extrinsic Resistance
5.5.1 Z Parameter Method5.5.2 Cold-HBT Method; 5.5.3 Open-Collector Method; 5.6 Extraction Method of Intrinsic Resistance; 5.6.1 Direct Extraction Method; 5.6.2 Hybrid Method; 5.7 Semianalysis Method; 5.8 Summary; References; Chapter 6 Large-Signal Equivalent Circuit Modeling of HBT; 6.1 Linear and Nonlinear; 6.1.1 Definition; 6.1.2 Nonlinear Lumped Elements; 6.2 Large Signal and Small Signal; 6.3 Thermal Resistance; 6.3.1 Definition; 6.3.2 Equivalent Circuit Model; 6.3.3 Determination of Thermal Resistance; 6.4 Nonlinear HBT Modeling; 6.4.1 VBIC Model; 6.4.2 Agilent Model
6.4.3 Macromodeling Method
Record Nr. UNINA-9910822337003321
Gao Jianjun <1968->  
Singapore : , : John Wiley and Sons, Incorporated, , 2015
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Junction-to-case thermal resistance of a silicon carbide bipolar junction transistor measured [[electronic resource] /] / Janis M. Niedra
Junction-to-case thermal resistance of a silicon carbide bipolar junction transistor measured [[electronic resource] /] / Janis M. Niedra
Autore Niedra Janis M
Pubbl/distr/stampa Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2006]
Descrizione fisica 1 online resource (11 pages) : illustrations
Collana NASA/CR
Soggetto topico Junction transistors
Temperature measurement
Bipolar transistors
Electric potential
Pulse amplitude
Thermal resistance
Silicon carbides
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910699314003321
Niedra Janis M  
Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2006]
Materiale a stampa
Lo trovi qui: Univ. Federico II
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