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1995 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO
| 1995 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO |
| Pubbl/distr/stampa | [Place of publication not identified], : IEEE Service Center, 1995 |
| Soggetto topico |
Compound semiconductors
Optoelectronic devices Microwave integrated circuits Millimeter wave devices Bipolar transistors Electrical & Computer Engineering Electrical Engineering Engineering & Applied Sciences |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-996204475403316 |
| [Place of publication not identified], : IEEE Service Center, 1995 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
1995 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO
| 1995 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO |
| Pubbl/distr/stampa | [Place of publication not identified], : IEEE Service Center, 1995 |
| Soggetto topico |
Compound semiconductors
Optoelectronic devices Microwave integrated circuits Millimeter wave devices Bipolar transistors Electrical & Computer Engineering Electrical Engineering Engineering & Applied Sciences |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910872773603321 |
| [Place of publication not identified], : IEEE Service Center, 1995 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) / / Institute of Electrical and Electronics Engineers (IEEE)
| 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) / / Institute of Electrical and Electronics Engineers (IEEE) |
| Pubbl/distr/stampa | Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers (IEEE), , 2019 |
| Descrizione fisica | 1 online resource (various pagings) : illustrations |
| Disciplina | 621.39732 |
| Soggetto topico |
Bipolar integrated circuits
Bipolar transistors |
| ISBN | 1-7281-0586-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium |
| Record Nr. | UNINA-9910389505703321 |
| Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers (IEEE), , 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) / / Institute of Electrical and Electronics Engineers (IEEE)
| 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) / / Institute of Electrical and Electronics Engineers (IEEE) |
| Pubbl/distr/stampa | Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers (IEEE), , 2019 |
| Descrizione fisica | 1 online resource (various pagings) : illustrations |
| Disciplina | 621.39732 |
| Soggetto topico |
Bipolar integrated circuits
Bipolar transistors |
| ISBN | 1-7281-0586-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium |
| Record Nr. | UNISA-996574614403316 |
| Piscataway, New Jersey : , : Institute of Electrical and Electronics Engineers (IEEE), , 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
Compact hierarchial bipolar transistor modeling with HICUM [[electronic resource] /] / Michael Schröter, Anjan Chakravorty
| Compact hierarchial bipolar transistor modeling with HICUM [[electronic resource] /] / Michael Schröter, Anjan Chakravorty |
| Autore | Schröter Michael |
| Pubbl/distr/stampa | Hackensack, N.J., : World Scientific, 2010 |
| Descrizione fisica | 1 online resource (740 p.) |
| Disciplina | 621.381528 |
| Altri autori (Persone) | ChakravortyAnjan |
| Collana | ASSET : international series on advances in solid state electronics and technology |
| Soggetto topico | Bipolar transistors |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-283-14370-4
9786613143709 981-4273-22-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Foreword; Biographies; Preface; Table of Contents; List of Often Used Acronyms and Symbols; Chapter 1 Introduction; Chapter 2 Device Modeling Overview; Chapter 3 Theory of Homojunction Bipolar Transistors; Chapter 4 Advanced Theory; Chapter 5 Geometry (Layout) Scaling; Chapter 6 Temperature Effects; Chapter 7 Compact Noise Modeling; Chapter 8 HICUM Level2; Chapter 9 Parameter Determination for HICUM/L2; Chapter 10 Model Hierarchy; Chapter 11 Application Examples; Chapter 12 Future Trends; Index |
| Record Nr. | UNINA-9910461618103321 |
Schröter Michael
|
||
| Hackensack, N.J., : World Scientific, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Compact hierarchial bipolar transistor modeling with HICUM [[electronic resource] /] / Michael Schröter, Anjan Chakravorty
| Compact hierarchial bipolar transistor modeling with HICUM [[electronic resource] /] / Michael Schröter, Anjan Chakravorty |
| Autore | Schröter Michael |
| Pubbl/distr/stampa | Hackensack, N.J., : World Scientific, 2010 |
| Descrizione fisica | 1 online resource (740 p.) |
| Disciplina | 621.381528 |
| Altri autori (Persone) | ChakravortyAnjan |
| Collana | ASSET : international series on advances in solid state electronics and technology |
| Soggetto topico | Bipolar transistors |
| ISBN |
1-283-14370-4
9786613143709 981-4273-22-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Foreword; Biographies; Preface; Table of Contents; List of Often Used Acronyms and Symbols; Chapter 1 Introduction; Chapter 2 Device Modeling Overview; Chapter 3 Theory of Homojunction Bipolar Transistors; Chapter 4 Advanced Theory; Chapter 5 Geometry (Layout) Scaling; Chapter 6 Temperature Effects; Chapter 7 Compact Noise Modeling; Chapter 8 HICUM Level2; Chapter 9 Parameter Determination for HICUM/L2; Chapter 10 Model Hierarchy; Chapter 11 Application Examples; Chapter 12 Future Trends; Index |
| Record Nr. | UNINA-9910789405203321 |
|
Schröter Michael
|
||
| Hackensack, N.J., : World Scientific, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Compact hierarchial bipolar transistor modeling with HICUM / / Michael Schröter, Anjan Chakravorty
| Compact hierarchial bipolar transistor modeling with HICUM / / Michael Schröter, Anjan Chakravorty |
| Autore | Schröter Michael |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Hackensack, N.J., : World Scientific, 2010 |
| Descrizione fisica | 1 online resource (740 p.) |
| Disciplina | 621.381528 |
| Altri autori (Persone) | ChakravortyAnjan |
| Collana | ASSET : international series on advances in solid state electronics and technology |
| Soggetto topico | Bipolar transistors |
| ISBN |
1-283-14370-4
9786613143709 981-4273-22-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Foreword; Biographies; Preface; Table of Contents; List of Often Used Acronyms and Symbols; Chapter 1 Introduction; Chapter 2 Device Modeling Overview; Chapter 3 Theory of Homojunction Bipolar Transistors; Chapter 4 Advanced Theory; Chapter 5 Geometry (Layout) Scaling; Chapter 6 Temperature Effects; Chapter 7 Compact Noise Modeling; Chapter 8 HICUM Level2; Chapter 9 Parameter Determination for HICUM/L2; Chapter 10 Model Hierarchy; Chapter 11 Application Examples; Chapter 12 Future Trends; Index |
| Record Nr. | UNINA-9910819617503321 |
|
Schröter Michael
|
||
| Hackensack, N.J., : World Scientific, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Fundamentals of III-V devices : HBTs, MESFETs, and HFETs/HEMTs / William Liu
| Fundamentals of III-V devices : HBTs, MESFETs, and HFETs/HEMTs / William Liu |
| Autore | Liu, William |
| Pubbl/distr/stampa | New York [etc] : Wiley e Sons, c1999 |
| Descrizione fisica | xii, 505 p. : ill. ; 25 cm |
| Disciplina | 621.3815 |
| Soggetto topico |
Bipolar transistors
Field-effect transistors Metal semiconductor field-effect transistors |
| ISBN | 0471297003 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISALENTO-991001158979707536 |
|
Liu, William
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| New York [etc] : Wiley e Sons, c1999 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. del Salento | ||
| ||
Heterojunction bipolar transistors for circuit design : microwave modelling and parameter extraction / / Jianjun Gao
| Heterojunction bipolar transistors for circuit design : microwave modelling and parameter extraction / / Jianjun Gao |
| Autore | Gao Jianjun <1968-> |
| Pubbl/distr/stampa | Singapore : , : John Wiley and Sons, Incorporated, , 2015 |
| Descrizione fisica | 1 online resource (278 p.) |
| Disciplina | 621.3815/28 |
| Soggetto topico |
Bipolar transistors
Heterojunctions Electronic circuit design Microwave measurements |
| ISBN |
1-118-92153-4
1-118-92155-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Title Page; Copyright Page; Contents; About the Author; Preface; Acknowledgments; Nomenclature; Chapter 1 Introduction; 1.1 Overview of Heterojunction Bipolar Transistors; 1.2 Modeling and Measurement for HBT; 1.3 Organization of This Book; References; Chapter 2 Basic Concept of Microwave Device Modeling; 2.1 Signal Parameters; 2.1.1 Low-Frequency Parameters; 2.1.2 S-Parameters; 2.2 Representation of Noisy Two-Port Network; 2.2.1 Noise Matrix; 2.2.2 Noise Parameters; 2.3 Basic Circuit Elements; 2.3.1 Resistance; 2.3.2 Capacitance; 2.3.3 Inductance; 2.3.4 Controlled Sources
2.3.5 Ideal Transmission Line2.4 π- and T-Type Networks; 2.4.1 T-Type Network; 2.4.2 π-Type Network; 2.4.3 Relationship between π- and T-Type Networks; 2.5 Deembedding Method; 2.5.1 Parallel Deembedding; 2.5.2 Series Deembedding; 2.5.3 Cascading Deembedding; 2.6 Basic Methods of Parameter Extraction; 2.6.1 Determination of Capacitance; 2.6.2 Determination of Inductance; 2.6.3 Determination of Resistance; 2.7 Summary; References; Chapter 3 Modeling and Parameter Extraction Methods of Bipolar Junction Transistor; 3.1 PN Junction; 3.2 PN Junction Diode; 3.2.1 Basic Concept 3.2.2 Equivalent Circuit Model3.2.3 Determination of Model Parameters; 3.3 BJT Physical Operation; 3.3.1 Device Structure; 3.3.2 The Modes of Operation; 3.3.3 Base-Width Modulation; 3.3.4 High Injection and Current Crowding; 3.4 Equivalent Circuit Model; 3.4.1 E-M Model; 3.4.2 G-P Model; 3.4.3 Noise Model; 3.5 Microwave Performance; 3.5.1 Transition Frequency; 3.5.2 Common-Emitter Configuration; 3.5.3 Common-Base Configuration; 3.5.4 Common-Collector Configuration; 3.5.5 Summary and Comparisons; 3.6 Summary; References; Chapter 4 Basic Principle of HBT; 4.1 Semiconductor Heterojunction 4.2 HBT Device4.2.1 GaAs HBT; 4.2.2 InP HBT; 4.3 Summary; References; Chapter 5 Small-Signal Modeling and Parameter Extraction of HBT; 5.1 Small-Signal Circuit Model; 5.1.1 Pad Structure; 5.1.2 T-Type Circuit Model; 5.1.3 π-Type Circuit Model; 5.1.4 Unilateral Power Gain; 5.1.5 fT and fmax; 5.2 HBT Device Structure; 5.3 Extraction Method of PAD Capacitances; 5.3.1 Open Test Structure Method; 5.3.2 Pinch-Off Method; 5.4 Extraction Method of Extrinsic Inductances; 5.4.1 Short Test Structure Method; 5.4.2 Open-Collector Method; 5.5 Extraction Method of Extrinsic Resistance 5.5.1 Z Parameter Method5.5.2 Cold-HBT Method; 5.5.3 Open-Collector Method; 5.6 Extraction Method of Intrinsic Resistance; 5.6.1 Direct Extraction Method; 5.6.2 Hybrid Method; 5.7 Semianalysis Method; 5.8 Summary; References; Chapter 6 Large-Signal Equivalent Circuit Modeling of HBT; 6.1 Linear and Nonlinear; 6.1.1 Definition; 6.1.2 Nonlinear Lumped Elements; 6.2 Large Signal and Small Signal; 6.3 Thermal Resistance; 6.3.1 Definition; 6.3.2 Equivalent Circuit Model; 6.3.3 Determination of Thermal Resistance; 6.4 Nonlinear HBT Modeling; 6.4.1 VBIC Model; 6.4.2 Agilent Model 6.4.3 Macromodeling Method |
| Record Nr. | UNINA-9910140452403321 |
|
Gao Jianjun <1968->
|
||
| Singapore : , : John Wiley and Sons, Incorporated, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Heterojunction bipolar transistors for circuit design : microwave modelling and parameter extraction / / Jianjun Gao
| Heterojunction bipolar transistors for circuit design : microwave modelling and parameter extraction / / Jianjun Gao |
| Autore | Gao Jianjun <1968-> |
| Pubbl/distr/stampa | Singapore : , : John Wiley and Sons, Incorporated, , 2015 |
| Descrizione fisica | 1 online resource (278 p.) |
| Disciplina | 621.3815/28 |
| Soggetto topico |
Bipolar transistors
Heterojunctions Electronic circuit design Microwave measurements |
| ISBN |
1-118-92153-4
1-118-92155-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Title Page; Copyright Page; Contents; About the Author; Preface; Acknowledgments; Nomenclature; Chapter 1 Introduction; 1.1 Overview of Heterojunction Bipolar Transistors; 1.2 Modeling and Measurement for HBT; 1.3 Organization of This Book; References; Chapter 2 Basic Concept of Microwave Device Modeling; 2.1 Signal Parameters; 2.1.1 Low-Frequency Parameters; 2.1.2 S-Parameters; 2.2 Representation of Noisy Two-Port Network; 2.2.1 Noise Matrix; 2.2.2 Noise Parameters; 2.3 Basic Circuit Elements; 2.3.1 Resistance; 2.3.2 Capacitance; 2.3.3 Inductance; 2.3.4 Controlled Sources
2.3.5 Ideal Transmission Line2.4 π- and T-Type Networks; 2.4.1 T-Type Network; 2.4.2 π-Type Network; 2.4.3 Relationship between π- and T-Type Networks; 2.5 Deembedding Method; 2.5.1 Parallel Deembedding; 2.5.2 Series Deembedding; 2.5.3 Cascading Deembedding; 2.6 Basic Methods of Parameter Extraction; 2.6.1 Determination of Capacitance; 2.6.2 Determination of Inductance; 2.6.3 Determination of Resistance; 2.7 Summary; References; Chapter 3 Modeling and Parameter Extraction Methods of Bipolar Junction Transistor; 3.1 PN Junction; 3.2 PN Junction Diode; 3.2.1 Basic Concept 3.2.2 Equivalent Circuit Model3.2.3 Determination of Model Parameters; 3.3 BJT Physical Operation; 3.3.1 Device Structure; 3.3.2 The Modes of Operation; 3.3.3 Base-Width Modulation; 3.3.4 High Injection and Current Crowding; 3.4 Equivalent Circuit Model; 3.4.1 E-M Model; 3.4.2 G-P Model; 3.4.3 Noise Model; 3.5 Microwave Performance; 3.5.1 Transition Frequency; 3.5.2 Common-Emitter Configuration; 3.5.3 Common-Base Configuration; 3.5.4 Common-Collector Configuration; 3.5.5 Summary and Comparisons; 3.6 Summary; References; Chapter 4 Basic Principle of HBT; 4.1 Semiconductor Heterojunction 4.2 HBT Device4.2.1 GaAs HBT; 4.2.2 InP HBT; 4.3 Summary; References; Chapter 5 Small-Signal Modeling and Parameter Extraction of HBT; 5.1 Small-Signal Circuit Model; 5.1.1 Pad Structure; 5.1.2 T-Type Circuit Model; 5.1.3 π-Type Circuit Model; 5.1.4 Unilateral Power Gain; 5.1.5 fT and fmax; 5.2 HBT Device Structure; 5.3 Extraction Method of PAD Capacitances; 5.3.1 Open Test Structure Method; 5.3.2 Pinch-Off Method; 5.4 Extraction Method of Extrinsic Inductances; 5.4.1 Short Test Structure Method; 5.4.2 Open-Collector Method; 5.5 Extraction Method of Extrinsic Resistance 5.5.1 Z Parameter Method5.5.2 Cold-HBT Method; 5.5.3 Open-Collector Method; 5.6 Extraction Method of Intrinsic Resistance; 5.6.1 Direct Extraction Method; 5.6.2 Hybrid Method; 5.7 Semianalysis Method; 5.8 Summary; References; Chapter 6 Large-Signal Equivalent Circuit Modeling of HBT; 6.1 Linear and Nonlinear; 6.1.1 Definition; 6.1.2 Nonlinear Lumped Elements; 6.2 Large Signal and Small Signal; 6.3 Thermal Resistance; 6.3.1 Definition; 6.3.2 Equivalent Circuit Model; 6.3.3 Determination of Thermal Resistance; 6.4 Nonlinear HBT Modeling; 6.4.1 VBIC Model; 6.4.2 Agilent Model 6.4.3 Macromodeling Method |
| Record Nr. | UNINA-9910822337003321 |
|
Gao Jianjun <1968->
|
||
| Singapore : , : John Wiley and Sons, Incorporated, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Soggetto topico
-
Bipolar transistors
(23)
- Bipolar integrated circuits (5)
- Germanium (4)
- Silicon (4)
- Junction transistors (3)