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ESD : circuits and devices / / Steven H. Voldman
| ESD : circuits and devices / / Steven H. Voldman |
| Autore | Voldman Steven H |
| Edizione | [Second edition.] |
| Pubbl/distr/stampa | Hoboken, NJ, : John Wiley, 2015 |
| Descrizione fisica | 1 online resource (414 p.) |
| Disciplina | 621.381 |
| Soggetto topico |
Integrated circuits - Protection
Electronic apparatus and appliances - Protection Static eliminators Electric discharges Electrostatics |
| ISBN |
9781118954485
1118954483 9781118954492 1118954491 9781118954478 1118954475 9781280339677 1280339675 9780470033470 0470033479 9780470030066 0470030062 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Electrostatic discharge -- Design synthesis -- Mosfet ESD design -- ESD design : diode design -- ESD design : passive resistors -- Passives for digital, analog, and RF applications -- Off-chip drivers and ESD -- Receiver circuits -- Silicon on insulator (SOI) ESD design -- ESD circuits : BiCMOS -- ESD power clamps -- Bipolar ESD power clamps -- Silicon-controlled rectifier power clamps. |
| Altri titoli varianti | Circuits and devices |
| Record Nr. | UNINA-9910824563303321 |
Voldman Steven H
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| Hoboken, NJ, : John Wiley, 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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ESD : circuits and devices / / Steven H. Voldman
| ESD : circuits and devices / / Steven H. Voldman |
| Autore | Voldman Steven H |
| Pubbl/distr/stampa | Hoboken, NJ, : John Wiley, 2006 |
| Descrizione fisica | 1 online resource (422 p.) |
| Disciplina | 621.381 |
| Soggetto topico |
Integrated circuits - Protection
Electronic apparatus and appliances - Protection Static eliminators Electric discharges Electrostatics |
| ISBN |
1-280-28748-9
9786610287482 0-470-01350-8 0-470-01290-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
ESD; Contents; About the Author; Preface; Acknowledgements; 1 Electrostatics and Electrothermal Physics; 1.1 Introduction; 1.2 A Time Constant Approach; 1.2.1 ESD Time Constants; 1.2.2 Time Constant Hierarchy; 1.2.3 Thermal Time Constant; 1.2.4 Thermal Diffusion; 1.2.5 Adiabatic, Thermal Diffusion Time Scale and Steady State; 1.2.6 Electroquasistatics and Magnetoquasistatics; 1.3 Instability; 1.3.1 Electrical Instability; 1.3.2 Electrothermal Instability; 1.3.3 Spatial Instability and Current Constriction; 1.4 Breakdown; 1.4.1 Paschen's Breakdown Theory; 1.4.2 Townsend's Concept
1.4.3 Toepler's Law1.5 Avalanche Breakdown; 1.5.1 Breakdown in Air; 1.5.2 Air Breakdown and Peak Currents; 1.5.3 Air Breakdown and Rise Times; 1.5.4 Mesoplasmas and Microplasmas; 1.5.5 Mesoplasma Phenomena; Problems; References; 2 Electrothermal Methods and ESD Models; 2.1 Electrothermal Methods; 2.1.1 Green's Function and Method of Images; 2.1.2 Integral Transforms of the Heat Conduction Equation; 2.1.3 Flux Potential Transfer Relations Matrix Methodology; 2.1.4 Heat Equation with Variable Conductivity; 2.1.5 Duhamel Formulation; 2.2 Electrothermal Models; 2.2.1 Tasca Model 2.2.2 Wunsch-Bell Model2.2.3 Smith-Littau Model; 2.2.4 Arkihpov-Astvatsaturyan-Godovosyn-Rudenko Model; 2.2.5 Vlasov-Sinkevitch Model; 2.2.6 Dwyer-Franklin-Campbell Model; 2.2.7 Greve Model; 2.2.8 Negative Differential Resistance Model; 2.2.9 Ash Model; 2.2.10 Statistical Models; Problems; References; 3 Semiconductor Devices and ESD; 3.1 Device Physics; 3.1.1 Nonisothermal Simulation; 3.2 Diodes; 3.2.1 Diode Equation; 3.2.2 Recombination and Generation Mechanisms; 3.3 Bipolar High-current Device Physics; 3.3.1 Bipolar Transistor Equation; 3.3.2 Kirk Effect; 3.3.3 Johnson Limit 3.4 Silicon-Controlled Rectifiers3.4.1 Regenerative Feedback; 3.5 Resistors; 3.6 MOSFET High-current Device Physics; 3.6.1 Parasitic Bipolar Transistor Equation; 3.6.2 Avalanche Breakdown and Snapback; 3.6.3 Instability and Current Constriction Model; 3.6.4 Dielectric Breakdown; 3.6.5 Gate Induced Drain Leakage (GIDL); Problems; References; 4 Substrates and ESD; 4.1 Methods of Substrate Analysis; 4.2 Substrate as a Semi-infinite Domain; 4.3 Substrate as a Stratified Medium Using the Transfer Matrix Approach; 4.4 Substrate Transmission Line Model; 4.5 Substrate Lossy Transmission Line Models 4.6 Substrate Absorption, Reflection and Transmission4.7 Substrate Electrical and Thermal Discretization; 4.8 Substrate Effects: Electrical Transfer Resistance; 4.9 Substrate Effects: Thermal Transfer Resistance; 4.10 Substrate Thermal Resistance Models; 4.10.1 Variable Cross-section Model; 4.10.2 Variable Elliptical Cross-section Model; 4.10.3 Back-surface Substrate Lumped Analytical Model; 4.11 Heavily Doped Substrates; 4.12 Low-doped Substrates; Problems; References; 5 Wells, Sub-collectors and ESD; 5.1 Diffused Wells; 5.2 Retrograde and Vertically Modulated Wells; 5.2.1 Retrograde Wells 5.2.2 Retrograde Well Substrate Modulation |
| Altri titoli varianti | Circuits and devices |
| Record Nr. | UNINA-9910876513903321 |
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Voldman Steven H
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||
| Hoboken, NJ, : John Wiley, 2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
IEEE circuits and devices magazine
| IEEE circuits and devices magazine |
| Pubbl/distr/stampa | [New York, NY], : IEEE |
| Disciplina | 621.3 |
| Soggetto topico |
Electronics
Electronic circuits Électronique Circuits électroniques Schaltung Zeitschrift Online-Ressource Elektrisches Bauelement Elektronische schakelingen Elektronische componenten |
| Soggetto genere / forma | Periodicals. |
| ISSN | 1558-1888 |
| Formato | Materiale a stampa |
| Livello bibliografico | Periodico |
| Lingua di pubblicazione | eng |
| Altri titoli varianti |
Circuits and devices magazine
IEEE circuits and devices Circuits and devices IEEE circuits & devices magazine Circuits & devices |
| Record Nr. | UNINA-9910626201303321 |
| [New York, NY], : IEEE | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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