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Novel Concepts in Ca talysis anc Chemical Reactors : Improving the Efficiency for the Future / Edit ed by Andrzej Cybulski, Jacob A. Moulijn and Andrezej Stankiewicz
| Novel Concepts in Ca talysis anc Chemical Reactors : Improving the Efficiency for the Future / Edit ed by Andrzej Cybulski, Jacob A. Moulijn and Andrezej Stankiewicz |
| Pubbl/distr/stampa | Weinheim : Wiley-WCH, c2010 |
| Descrizione fisica | XXV, 372 p., : ill. ; 25 cm |
| Altri autori (Persone) | Cybulski, Andrezej |
| Soggetto non controllato | Catalysis |
| ISBN | 978-3-527-32469-9 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-990009336540403321 |
| Weinheim : Wiley-WCH, c2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Silicon carbide . Volume 1 Growth, defects, and novel applications [[electronic resource] /] / edited by Peter Friedrichs ... [et al.]
| Silicon carbide . Volume 1 Growth, defects, and novel applications [[electronic resource] /] / edited by Peter Friedrichs ... [et al.] |
| Pubbl/distr/stampa | Weinheim, Germany, : Wiley-WCH, c2010 |
| Descrizione fisica | 1 online resource (530 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) | FriedrichsPeter |
| Soggetto topico |
Silicon carbide
Semiconductors |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-283-37037-9
9786613370372 3-527-62906-8 3-527-62905-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications; Contents; Preface; List of Contributors; Volume 1 Silicon Carbide: Growth, Defects, and Novel Applications; Part A Growth of SiC; 1 Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution; 1.1 Introduction; 1.2 Experiments; 1.3 Results and discussions; 1.4 Spatial distribution of dislocations in SiC; 1.5 Conclusions; References; 2 Bulk and epitaxial growth of micropipe-free silicon carbide on basal and rhombohedral plane seeds; 2.1 Introduction
2.2 Search for stable rhombohedral facets in 6H- and 4H-SiC2.3 PVT growth of bulk 6H- and 4H-SiC on rhombohedral (011n) facets; 2.4 Homoepitaxial Liquid Phase Epitaxy growth on basal and rhombohedral plane seeds; 2.5 Conclusions; References; 3 Formation of extended defects in 4H-SiC epitaxial growth and development of a fast growth technique; 3.1 Introduction; 3.2 Experimental; 3.3 Formation of extended defects in 4H-SiC epitaxial growth; 3.4 Fast epitaxial growth of 4H-SiC; 3.5 Conclusions; References; 4 Fabrication of high performance 3C-SiC vertical MOSFETs by reducing planar defects 4.1 Introduction4.2 Reduction of planar defects in 3C-SiC; 4.3 Performance of vertical MOSFETs; 4.4 Conclusions; References; Part B Characterization of Defects and Material Properties; 5 Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches; 5.1 Introduction; 5.2 Assessing the identity of defects in SiC; 5.3 Vacancy-related defects; 5.4 Vacancy aggregation and its consequences; 5.5 Carbon interstitial-related defects and high-frequency vibrations; 5.6 The carbon aggregation and its implications 5.7 Summary and outlookReferences; 6 EPR identification of intrinsic defects in SiC; 6.1 Introduction; 6.2 Isolated vacancy; 6.3 Pulsed ELDOR of TV2a: Observation of missing central line; 6.4 Divacancy; 6.5 Antisites and antisite-vacancy pairs; 6.6 Conclusion; References; 7 Electrical and topographical characterization of aluminum implanted layers in 4H silicon carbide; 7.1 Introduction; 7.2 Experimental; 7.3 Electrical characterization; 7.4 Topographical characterization; 7.5 Summary; References; 8 Optical properties of as-grown and process-induced stacking faults in 4H-SiC; 8.1 Introduction 8.2 Structural aspects8.3 Imaging techniques; 8.4 Optical SFs signature; 8.5 More realistic type-II QW model; 8.6 Transfer matrix method; 8.7 Focussing on a single QW; 8.8 Conclusions; References; 9 Characterization of defects in silicon carbide by Raman spectroscopy; 9.1 Introduction; 9.2 Experimental setup; 9.3 Polytype conversion in 3C-SiC grown by chemical vapor deposition; 9.4 Electronic Raman studies of shallow donors in silicon carbide; 9.5 Graphene layers on SiC-surfaces; 9.6 Summary; References 10 Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation |
| Record Nr. | UNINA-9910130882103321 |
| Weinheim, Germany, : Wiley-WCH, c2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Silicon carbide . Volume 1 Growth, defects, and novel applications [[electronic resource] /] / edited by Peter Friedrichs ... [et al.]
| Silicon carbide . Volume 1 Growth, defects, and novel applications [[electronic resource] /] / edited by Peter Friedrichs ... [et al.] |
| Pubbl/distr/stampa | Weinheim, Germany, : Wiley-WCH, c2010 |
| Descrizione fisica | 1 online resource (530 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) | FriedrichsPeter |
| Soggetto topico |
Silicon carbide
Semiconductors |
| ISBN |
1-283-37037-9
9786613370372 3-527-62906-8 3-527-62905-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications; Contents; Preface; List of Contributors; Volume 1 Silicon Carbide: Growth, Defects, and Novel Applications; Part A Growth of SiC; 1 Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution; 1.1 Introduction; 1.2 Experiments; 1.3 Results and discussions; 1.4 Spatial distribution of dislocations in SiC; 1.5 Conclusions; References; 2 Bulk and epitaxial growth of micropipe-free silicon carbide on basal and rhombohedral plane seeds; 2.1 Introduction
2.2 Search for stable rhombohedral facets in 6H- and 4H-SiC2.3 PVT growth of bulk 6H- and 4H-SiC on rhombohedral (011n) facets; 2.4 Homoepitaxial Liquid Phase Epitaxy growth on basal and rhombohedral plane seeds; 2.5 Conclusions; References; 3 Formation of extended defects in 4H-SiC epitaxial growth and development of a fast growth technique; 3.1 Introduction; 3.2 Experimental; 3.3 Formation of extended defects in 4H-SiC epitaxial growth; 3.4 Fast epitaxial growth of 4H-SiC; 3.5 Conclusions; References; 4 Fabrication of high performance 3C-SiC vertical MOSFETs by reducing planar defects 4.1 Introduction4.2 Reduction of planar defects in 3C-SiC; 4.3 Performance of vertical MOSFETs; 4.4 Conclusions; References; Part B Characterization of Defects and Material Properties; 5 Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches; 5.1 Introduction; 5.2 Assessing the identity of defects in SiC; 5.3 Vacancy-related defects; 5.4 Vacancy aggregation and its consequences; 5.5 Carbon interstitial-related defects and high-frequency vibrations; 5.6 The carbon aggregation and its implications 5.7 Summary and outlookReferences; 6 EPR identification of intrinsic defects in SiC; 6.1 Introduction; 6.2 Isolated vacancy; 6.3 Pulsed ELDOR of TV2a: Observation of missing central line; 6.4 Divacancy; 6.5 Antisites and antisite-vacancy pairs; 6.6 Conclusion; References; 7 Electrical and topographical characterization of aluminum implanted layers in 4H silicon carbide; 7.1 Introduction; 7.2 Experimental; 7.3 Electrical characterization; 7.4 Topographical characterization; 7.5 Summary; References; 8 Optical properties of as-grown and process-induced stacking faults in 4H-SiC; 8.1 Introduction 8.2 Structural aspects8.3 Imaging techniques; 8.4 Optical SFs signature; 8.5 More realistic type-II QW model; 8.6 Transfer matrix method; 8.7 Focussing on a single QW; 8.8 Conclusions; References; 9 Characterization of defects in silicon carbide by Raman spectroscopy; 9.1 Introduction; 9.2 Experimental setup; 9.3 Polytype conversion in 3C-SiC grown by chemical vapor deposition; 9.4 Electronic Raman studies of shallow donors in silicon carbide; 9.5 Graphene layers on SiC-surfaces; 9.6 Summary; References 10 Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation |
| Record Nr. | UNINA-9910829880403321 |
| Weinheim, Germany, : Wiley-WCH, c2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Silicon carbide . Volume 1 Growth, defects, and novel applications / / edited by Peter Friedrichs ... [et al.]
| Silicon carbide . Volume 1 Growth, defects, and novel applications / / edited by Peter Friedrichs ... [et al.] |
| Pubbl/distr/stampa | Weinheim, Germany, : Wiley-WCH, c2010 |
| Descrizione fisica | 1 online resource (530 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) | FriedrichsPeter |
| Soggetto topico |
Silicon carbide
Semiconductors |
| ISBN |
9786613370372
9781283370370 1283370379 9783527629060 3527629068 9783527629053 352762905X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications; Contents; Preface; List of Contributors; Volume 1 Silicon Carbide: Growth, Defects, and Novel Applications; Part A Growth of SiC; 1 Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution; 1.1 Introduction; 1.2 Experiments; 1.3 Results and discussions; 1.4 Spatial distribution of dislocations in SiC; 1.5 Conclusions; References; 2 Bulk and epitaxial growth of micropipe-free silicon carbide on basal and rhombohedral plane seeds; 2.1 Introduction
2.2 Search for stable rhombohedral facets in 6H- and 4H-SiC2.3 PVT growth of bulk 6H- and 4H-SiC on rhombohedral (011n) facets; 2.4 Homoepitaxial Liquid Phase Epitaxy growth on basal and rhombohedral plane seeds; 2.5 Conclusions; References; 3 Formation of extended defects in 4H-SiC epitaxial growth and development of a fast growth technique; 3.1 Introduction; 3.2 Experimental; 3.3 Formation of extended defects in 4H-SiC epitaxial growth; 3.4 Fast epitaxial growth of 4H-SiC; 3.5 Conclusions; References; 4 Fabrication of high performance 3C-SiC vertical MOSFETs by reducing planar defects 4.1 Introduction4.2 Reduction of planar defects in 3C-SiC; 4.3 Performance of vertical MOSFETs; 4.4 Conclusions; References; Part B Characterization of Defects and Material Properties; 5 Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches; 5.1 Introduction; 5.2 Assessing the identity of defects in SiC; 5.3 Vacancy-related defects; 5.4 Vacancy aggregation and its consequences; 5.5 Carbon interstitial-related defects and high-frequency vibrations; 5.6 The carbon aggregation and its implications 5.7 Summary and outlookReferences; 6 EPR identification of intrinsic defects in SiC; 6.1 Introduction; 6.2 Isolated vacancy; 6.3 Pulsed ELDOR of TV2a: Observation of missing central line; 6.4 Divacancy; 6.5 Antisites and antisite-vacancy pairs; 6.6 Conclusion; References; 7 Electrical and topographical characterization of aluminum implanted layers in 4H silicon carbide; 7.1 Introduction; 7.2 Experimental; 7.3 Electrical characterization; 7.4 Topographical characterization; 7.5 Summary; References; 8 Optical properties of as-grown and process-induced stacking faults in 4H-SiC; 8.1 Introduction 8.2 Structural aspects8.3 Imaging techniques; 8.4 Optical SFs signature; 8.5 More realistic type-II QW model; 8.6 Transfer matrix method; 8.7 Focussing on a single QW; 8.8 Conclusions; References; 9 Characterization of defects in silicon carbide by Raman spectroscopy; 9.1 Introduction; 9.2 Experimental setup; 9.3 Polytype conversion in 3C-SiC grown by chemical vapor deposition; 9.4 Electronic Raman studies of shallow donors in silicon carbide; 9.5 Graphene layers on SiC-surfaces; 9.6 Summary; References 10 Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation |
| Record Nr. | UNINA-9911018794303321 |
| Weinheim, Germany, : Wiley-WCH, c2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
