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17 proven currency trading strategies : how to profit in the Forex market / / Mario Singh
| 17 proven currency trading strategies : how to profit in the Forex market / / Mario Singh |
| Autore | Singh Mario |
| Edizione | [1st edition] |
| Pubbl/distr/stampa | Singapore, : John Wiley & sons Singapore Pte. Ltd., 2013 |
| Descrizione fisica | 1 online resource (xix, 252 pages) : illustrations |
| Disciplina | 332.45 |
| Collana |
Wiley trading series
Gale eBooks |
| Soggetto topico | Foreign exchange market |
| ISBN |
1-119-19899-2
1-283-92788-8 1-118-38553-5 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | pt. 1. Forex is a game -- pt. 2. Strategies to win the game. |
| Record Nr. | UNINA-9910141493703321 |
Singh Mario
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| Singapore, : John Wiley & sons Singapore Pte. Ltd., 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Designated drivers : how China plans to dominate the global auto industry / / G. E. Anderson ; with a foreword by Arthur Kroeber
| Designated drivers : how China plans to dominate the global auto industry / / G. E. Anderson ; with a foreword by Arthur Kroeber |
| Autore | Anderson G. E (Greg E.) |
| Pubbl/distr/stampa | Solaris South Tower, Singapore : , : John Wiley & Sons Singapore Pte. Ltd., , 2012 |
| Descrizione fisica | 1 online resource (337 p.) |
| Disciplina | 331.7 |
| Soggetto topico | Automobile industry and trade - China |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-118-32888-4
1-119-19905-0 1-280-58845-4 9786613618283 1-118-32886-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Designated Drivers: How China Plans to Dominate the Global Auto Industry; Contents; Map of Chinese Provinces and Cities Mentioned in the Book; List of Terms and Acronyms; Words Used to Describe Types of Automobiles and Their Chinese Equivalents; Other Terms and Acronyms; Foreword; Preface; A Few Notes for the Reader; Acknowledgments; Chapter One: Building National Champions; Chery: A State-Owned Startup; What Chery Reveals About Chinese Industry; Why China?; A Challenge to the West; Why Autos?; Conclusion, and a Roadmap; Notes; Chapter Two: The System; The Players; Central Government
Local GovernmentThe Automakers; Their Objectives; Central Government; Local Governments; State-Owned Enterprises; Private Enterprises; Foreign Multinationals; The Outcomes; Consolidation; Technology Acquisition; Chinese Brand Development; New Energy Vehicle Development; Conclusion; Notes; Chapter Three: The Policy; Stage One: State-Centric; Stage Two: Global Partnering; ""Produce without Limits""; Early Five-Year Plans; Big Three, Small Three; The Eighth Five-Year Plan; The 1994 Auto Policy; The Ninth Five-Year Plan; The Late 1990s: Getting Serious about Policymaking The Tenth Five-Year Plan: Focus on New Technologies, Anticipating WTOStage Three: Indigenous Innovation; WTO Accession; 2004 Auto Industry Development Policy; The Eleventh Five-Year Plan: Innovation and Sustainable Development; Recession and Stimulus; The 2009 Auto Industry Adjustment and Stimulus Plan; The Twelfth Five-Year Plan: Focus on New Energy Vehicles; Conclusion; Notes; Chapter Four: The Joint Ventures; Beijing-Jeep; Shanghai-Volkswagen; Shanghai-GM; Guangzhou-Peugeot; Conclusion; Notes; Chapter Five: The Independents; Geely; BYD; Great Wall; Brilliance China; Sichuan Tengzhong ConclusionConsolidation; Technology Acquisition; Chinese Brand Development; New Energy Vehicle Development; Other Key Points; Notes; Chapter Six: The Mergers; FAW-Tianjin Xiali Merger; SAIC-Nanjing Merger; Guangzhou-Changfeng Merger; Subsequent Mergers; How Fragmented Is China's Auto Industry?; Conclusion; Notes; Chapter Seven: The Neighbors; Ownership; Key Institutions; Technology Acquisition; Foreign Involvement; Industry Support; Funding; Policy Support; Market Protection; Industry Structure; Conclusion; Notes; Chapter Eight: In Conclusion; Summary of Findings; Consolidation Technology AcquisitionChinese Brand Development; New Energy Vehicle Development; Looking Forward; How Safe Is the Private Sector?; Can China Innovate?; How Long Will Foreign Automakers Be Welcome?; Remaining Challenges; Notes; Appendix A: List of Passenger Vehicle Assembly Joint Ventures; Appendix B: Additional Data; Selected Bibliography; About the Author; Index |
| Record Nr. | UNINA-9910141293803321 |
|
Anderson G. E (Greg E.)
|
||
| Solaris South Tower, Singapore : , : John Wiley & Sons Singapore Pte. Ltd., , 2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Designated drivers : how China plans to dominate the global auto industry / / G. E. Anderson ; with a foreword by Arthur Kroeber
| Designated drivers : how China plans to dominate the global auto industry / / G. E. Anderson ; with a foreword by Arthur Kroeber |
| Autore | Anderson G. E (Greg E.) |
| Pubbl/distr/stampa | Solaris South Tower, Singapore : , : John Wiley & Sons Singapore Pte. Ltd., , 2012 |
| Descrizione fisica | 1 online resource (337 p.) |
| Disciplina | 331.7 |
| Soggetto topico | Automobile industry and trade - China |
| ISBN |
1-118-32888-4
1-119-19905-0 1-280-58845-4 9786613618283 1-118-32886-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Designated Drivers: How China Plans to Dominate the Global Auto Industry; Contents; Map of Chinese Provinces and Cities Mentioned in the Book; List of Terms and Acronyms; Words Used to Describe Types of Automobiles and Their Chinese Equivalents; Other Terms and Acronyms; Foreword; Preface; A Few Notes for the Reader; Acknowledgments; Chapter One: Building National Champions; Chery: A State-Owned Startup; What Chery Reveals About Chinese Industry; Why China?; A Challenge to the West; Why Autos?; Conclusion, and a Roadmap; Notes; Chapter Two: The System; The Players; Central Government
Local GovernmentThe Automakers; Their Objectives; Central Government; Local Governments; State-Owned Enterprises; Private Enterprises; Foreign Multinationals; The Outcomes; Consolidation; Technology Acquisition; Chinese Brand Development; New Energy Vehicle Development; Conclusion; Notes; Chapter Three: The Policy; Stage One: State-Centric; Stage Two: Global Partnering; ""Produce without Limits""; Early Five-Year Plans; Big Three, Small Three; The Eighth Five-Year Plan; The 1994 Auto Policy; The Ninth Five-Year Plan; The Late 1990s: Getting Serious about Policymaking The Tenth Five-Year Plan: Focus on New Technologies, Anticipating WTOStage Three: Indigenous Innovation; WTO Accession; 2004 Auto Industry Development Policy; The Eleventh Five-Year Plan: Innovation and Sustainable Development; Recession and Stimulus; The 2009 Auto Industry Adjustment and Stimulus Plan; The Twelfth Five-Year Plan: Focus on New Energy Vehicles; Conclusion; Notes; Chapter Four: The Joint Ventures; Beijing-Jeep; Shanghai-Volkswagen; Shanghai-GM; Guangzhou-Peugeot; Conclusion; Notes; Chapter Five: The Independents; Geely; BYD; Great Wall; Brilliance China; Sichuan Tengzhong ConclusionConsolidation; Technology Acquisition; Chinese Brand Development; New Energy Vehicle Development; Other Key Points; Notes; Chapter Six: The Mergers; FAW-Tianjin Xiali Merger; SAIC-Nanjing Merger; Guangzhou-Changfeng Merger; Subsequent Mergers; How Fragmented Is China's Auto Industry?; Conclusion; Notes; Chapter Seven: The Neighbors; Ownership; Key Institutions; Technology Acquisition; Foreign Involvement; Industry Support; Funding; Policy Support; Market Protection; Industry Structure; Conclusion; Notes; Chapter Eight: In Conclusion; Summary of Findings; Consolidation Technology AcquisitionChinese Brand Development; New Energy Vehicle Development; Looking Forward; How Safe Is the Private Sector?; Can China Innovate?; How Long Will Foreign Automakers Be Welcome?; Remaining Challenges; Notes; Appendix A: List of Passenger Vehicle Assembly Joint Ventures; Appendix B: Additional Data; Selected Bibliography; About the Author; Index |
| Record Nr. | UNINA-9910678043303321 |
|
Anderson G. E (Greg E.)
|
||
| Solaris South Tower, Singapore : , : John Wiley & Sons Singapore Pte. Ltd., , 2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Fundamentals of silicon carbide technology : growth, characterization, devices and applications / / Tsunenobu Kimoto, James A. Cooper
| Fundamentals of silicon carbide technology : growth, characterization, devices and applications / / Tsunenobu Kimoto, James A. Cooper |
| Autore | Kimoto Tsunenobu <1963-> |
| Pubbl/distr/stampa | Singapore : , : John Wiley & Sons Singapore Pte. Ltd., , [2014] |
| Descrizione fisica | 1 online resource (555 p.) |
| Disciplina | 621.3815/2 |
| Altri autori (Persone) | CooperJames A. <1946-> |
| Soggetto topico |
Silicon carbide
Semiconductors Integrated circuits |
| ISBN |
1-118-31353-4
1-118-31354-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
About the Authors xi -- Preface xiii -- 1 Introduction 1 -- 1.1 Progress in Electronics 1 -- 1.2 Features and Brief History of Silicon Carbide 3 -- 1.2.1 Early History 3 -- 1.2.2 Innovations in SiC Crystal Growth 4 -- 1.2.3 Promise and Demonstration of SiC Power Devices 5 -- 1.3 Outline of This Book 6 -- References 6 -- 2 Physical Properties of Silicon Carbide 11 -- 2.1 Crystal Structure 11 -- 2.2 Electrical and Optical Properties 16 -- 2.2.1 Band Structure 16 -- 2.2.2 Optical Absorption Coefficient and Refractive Index 18 -- 2.2.3 Impurity Doping and Carrier Density 20 -- 2.2.4 Mobility 23 -- 2.2.5 Drift Velocity 27 -- 2.2.6 Breakdown Electric Field Strength 28 -- 2.3 Thermal and Mechanical Properties 30 -- 2.3.1 Thermal Conductivity 30 -- 2.3.2 Phonons 31 -- 2.3.3 Hardness and Mechanical Properties 32 -- 2.4 Summary 32 -- References 33 -- 3 Bulk Growth of Silicon Carbide 39 -- 3.1 Sublimation Growth 39 -- 3.1.1 Phase Diagram of Si-C 39 -- 3.1.2 Basic Phenomena Occurring during the Sublimation (Physical Vapor Transport) Method 39 -- 3.1.3 Modeling and Simulation 44 -- 3.2 Polytype Control in Sublimation Growth 46 -- 3.3 Defect Evolution and Reduction in Sublimation Growth 50 -- 3.3.1 Stacking Faults 50 -- 3.3.2 Micropipe Defects 51 -- 3.3.3 Threading Screw Dislocation 53 -- 3.3.4 Threading Edge Dislocation and Basal Plane Dislocation 54 -- 3.3.5 Defect Reduction 57 -- 3.4 Doping Control in Sublimation Growth 59 -- 3.4.1 Impurity Incorporation 59 -- 3.4.2 n-Type Doping 61 -- 3.4.3 p-Type Doping 61 -- 3.4.4 Semi-Insulating 62 -- 3.5 High-Temperature Chemical Vapor Deposition 64 -- 3.6 Solution Growth 66 -- 3.7 3C-SiC Wafers Grown by Chemical Vapor Deposition 67 -- 3.8 Wafering and Polishing 67 -- 3.9 Summary 69 -- References 69 -- 4 Epitaxial Growth of Silicon Carbide 75 -- 4.1 Fundamentals of SiC Homoepitaxy 75 -- 4.1.1 Polytype Replication in SiC Epitaxy 75 -- 4.1.2 Theoretical Model of SiC Homoepitaxy 78 -- 4.1.3 Growth Rate and Modeling 83 -- 4.1.4 Surface Morphology and Step Dynamics 87.
4.1.5 Reactor Design for SiC Epitaxy 89 -- 4.2 Doping Control in SiC CVD 90 -- 4.2.1 Background Doping 90 -- 4.2.2 n-Type Doping 91 -- 4.2.3 p-Type Doping 92 -- 4.3 Defects in SiC Epitaxial Layers 93 -- 4.3.1 Extended Defects 93 -- 4.3.2 Deep Levels 102 -- 4.4 Fast Homoepitaxy of SiC 105 -- 4.5 SiC Homoepitaxy on Non-standard Planes 107 -- 4.5.1 SiC Homoepitaxy on Nearly On-Axis {0001} 107 -- 4.5.2 SiC Homoepitaxy on Non-basal Planes 108 -- 4.5.3 Embedded Homoepitaxy of SiC 110 -- 4.6 SiC Homoepitaxy by Other Techniques 110 -- 4.7 Heteroepitaxy of 3C-SiC 111 -- 4.7.1 Heteroepitaxial Growth of 3C-SiC on Si 111 -- 4.7.2 Heteroepitaxial Growth of 3C-SiC on Hexagonal SiC 114 -- 4.8 Summary 114 -- References 115 -- 5 Characterization Techniques and Defects in Silicon Carbide 125 -- 5.1 Characterization Techniques 125 -- 5.1.1 Photoluminescence 126 -- 5.1.2 Raman Scattering 134 -- 5.1.3 Hall Effect and Capacitance-Voltage Measurements 136 -- 5.1.4 Carrier Lifetime Measurements 137 -- 5.1.5 Detection of Extended Defects 142 -- 5.1.6 Detection of Point Defects 150 -- 5.2 Extended Defects in SiC 155 -- 5.2.1 Major Extended Defects in SiC 155 -- 5.2.2 Bipolar Degradation 156 -- 5.2.3 Effects of Extended Defects on SiC Device Performance 161 -- 5.3 Point Defects in SiC 165 -- 5.3.1 Major Deep Levels in SiC 165 -- 5.3.2 Carrier Lifetime Killer 174 -- 5.4 Summary 179 -- References 180 -- 6 Device Processing of Silicon Carbide 189 -- 6.1 Ion Implantation 189 -- 6.1.1 Selective Doping Techniques 190 -- 6.1.2 Formation of an n-Type Region by Ion Implantation 191 -- 6.1.3 Formation of a p-Type Region by Ion Implantation 197 -- 6.1.4 Formation of a Semi-Insulating Region by Ion Implantation 200 -- 6.1.5 High-Temperature Annealing and Surface Roughening 201 -- 6.1.6 Defect Formation by Ion Implantation and Subsequent Annealing 203 -- 6.2 Etching 208 -- 6.2.1 Reactive Ion Etching 208 -- 6.2.2 High-Temperature Gas Etching 211 -- 6.2.3 Wet Etching 212 -- 6.3 Oxidation and Oxide/SiC Interface Characteristics 212. 6.3.1 Oxidation Rate 213 -- 6.3.2 Dielectric Properties of Oxides 215 -- 6.3.3 Structural and Physical Characterization of Thermal Oxides 217 -- 6.3.4 Electrical Characterization Techniques and Their Limitations 219 -- 6.3.5 Properties of the Oxide/SiC Interface and Their Improvement 234 -- 6.3.6 Interface Properties of Oxide/SiC on Various Faces 241 -- 6.3.7 Mobility-Limiting Factors 244 -- 6.4 Metallization 248 -- 6.4.1 Schottky Contacts on n-Type and p-Type SiC 249 -- 6.4.2 Ohmic Contacts to n-Type and p-Type SiC 255 -- 6.5 Summary 262 -- References 263 -- 7 Unipolar and Bipolar Power Diodes 277 -- 7.1 Introduction to SiC Power Switching Devices 277 -- 7.1.1 Blocking Voltage 277 -- 7.1.2 Unipolar Power Device Figure of Merit 280 -- 7.1.3 Bipolar Power Device Figure of Merit 281 -- 7.2 Schottky Barrier Diodes (SBDs) 282 -- 7.3 pn and pin Junction Diodes 286 -- 7.3.1 High-Level Injection and the Ambipolar Diffusion Equation 288 -- 7.3.2 Carrier Densities in the "i" Region 290 -- 7.3.3 Potential Drop across the "i" Region 292 -- 7.3.4 Current-Voltage Relationship 293 -- 7.4 Junction-Barrier Schottky (JBS) and Merged pin-Schottky (MPS) Diodes 296 -- References 300 -- 8 Unipolar Power Switching Devices 301 -- 8.1 Junction Field-Effect Transistors (JFETs) 301 -- 8.1.1 Pinch-Off Voltage 302 -- 8.1.2 Current-Voltage Relationship 303 -- 8.1.3 Saturation Drain Voltage 304 -- 8.1.4 Specific On-Resistance 305 -- 8.1.5 Enhancement-Mode and Depletion-Mode Operation 308 -- 8.1.6 Power JFET Implementations 311 -- 8.2 Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) 312 -- 8.2.1 Review of MOS Electrostatics 312 -- 8.2.2 MOS Electrostatics with Split Quasi-Fermi Levels 315 -- 8.2.3 MOSFET Current-Voltage Relationship 316 -- 8.2.4 Saturation Drain Voltage 319 -- 8.2.5 Specific On-Resistance 319 -- 8.2.6 Power MOSFET Implementations: DMOSFETs and UMOSFETs 320 -- 8.2.7 Advanced DMOSFET Designs 321 -- 8.2.8 Advanced UMOS Designs 324 -- 8.2.9 Threshold Voltage Control 326. 8.2.10 Inversion Layer Electron Mobility 329 -- 8.2.11 Oxide Reliability 339 -- 8.2.12 MOSFET Transient Response 342 -- References 350 -- 9 Bipolar Power Switching Devices 353 -- 9.1 Bipolar Junction Transistors (BJTs) 353 -- 9.1.1 Internal Currents 353 -- 9.1.2 Gain Parameters 355 -- 9.1.3 Terminal Currents 357 -- 9.1.4 Current-Voltage Relationship 359 -- 9.1.5 High-Current Effects in the Collector: Saturation and Quasi-Saturation 360 -- 9.1.6 High-Current Effects in the Base: the Rittner Effect 366 -- 9.1.7 High-Current Effects in the Collector: Second Breakdown and the Kirk Effect 368 -- 9.1.8 Common Emitter Current Gain: Temperature Dependence 370 -- 9.1.9 Common Emitter Current Gain: the Effect of Recombination 371 -- 9.1.10 Blocking Voltage 373 -- 9.2 Insulated-Gate Bipolar Transistors (IGBTs) 373 -- 9.2.1 Current-Voltage Relationship 374 -- 9.2.2 Blocking Voltage 384 -- 9.2.3 Switching Characteristics 385 -- 9.2.4 Temperature Dependence of Parameters 391 -- 9.3 Thyristors 392 -- 9.3.1 Forward Conducting Regime 393 -- 9.3.2 Forward Blocking Regime and Triggering 398 -- 9.3.3 The Turn-On Process 404 -- 9.3.4 dV/dt Triggering 406 -- 9.3.5 The dI/dt Limitation 407 -- 9.3.6 The Turn-Off Process 407 -- 9.3.7 Reverse-Blocking Mode 415 -- References 415 -- 10 Optimization and Comparison of Power Devices 417 -- 10.1 Blocking Voltage and Edge Terminations for SiC Power Devices 417 -- 10.1.1 Impact Ionization and Avalanche Breakdown 418 -- 10.1.2 Two-Dimensional Field Crowding and Junction Curvature 423 -- 10.1.3 Trench Edge Terminations 424 -- 10.1.4 Beveled Edge Terminations 425 -- 10.1.5 Junction Termination Extensions (JTEs) 427 -- 10.1.6 Floating Field-Ring (FFR) Terminations 429 -- 10.1.7 Multiple-Floating-Zone (MFZ) JTE and Space-Modulated (SM) JTE 432 -- 10.2 Optimum Design of Unipolar Drift Regions 435 -- 10.2.1 Vertical Drift Regions 435 -- 10.2.2 Lateral Drift Regions 438 -- 10.3 Comparison of Device Performance 440 -- References 443 -- 11 Applications of Silicon Carbide Devices in Power Systems 445. 11.1 Introduction to Power Electronic Systems 445 -- 11.2 Basic Power Converter Circuits 446 -- 11.2.1 Line-Frequency Phase-Controlled Rectifiers and Inverters 446 -- 11.2.2 Switch-Mode DC-DC Converters 450 -- 11.2.3 Switch-Mode Inverters 453 -- 11.3 Power Electronics for Motor Drives 458 -- 11.3.1 Introduction to Electric Motors and Motor Drives 458 -- 11.3.2 DC Motor Drives 459 -- 11.3.3 Induction Motor Drives 460 -- 11.3.4 Synchronous Motor Drives 465 -- 11.3.5 Motor Drives for Hybrid and Electric Vehicles 468 -- 11.4 Power Electronics for Renewable Energy 471 -- 11.4.1 Inverters for Photovoltaic Power Sources 471 -- 11.4.2 Converters for Wind Turbine Power Sources 472 -- 11.5 Power Electronics for Switch-Mode Power Supplies 476 -- 11.6 Performance Comparison of SiC and Silicon Power Devices 481 -- References 486 -- 12 Specialized Silicon Carbide Devices and Applications 487 -- 12.1 Microwave Devices 487 -- 12.1.1 Metal-Semiconductor Field-Effect Transistors (MESFETs) 487 -- 12.1.2 Static Induction Transistors (SITs) 489 -- 12.1.3 Impact Ionization Avalanche Transit-Time (IMPATT) Diodes 496 -- 12.2 High-Temperature Integrated Circuits 497 -- 12.3 Sensors 499 -- 12.3.1 Micro-Electro-Mechanical Sensors (MEMS) 499 -- 12.3.2 Gas Sensors 500 -- 12.3.3 Optical Detectors 504 -- References 509 -- Appendix A Incomplete Dopant Ionization in 4H-SiC 511 -- References 515 -- Appendix B Properties of the Hyperbolic Functions 517 -- Appendix C Major Physical Properties of Common SiC Polytypes 521 -- C.1 Properties 521 -- C.2 Temperature and/or Doping Dependence of Major Physical Properties 522 -- References 523 -- Index 525. |
| Altri titoli varianti | Fundamentals of SiC technology |
| Record Nr. | UNINA-9910132160403321 |
|
Kimoto Tsunenobu <1963->
|
||
| Singapore : , : John Wiley & Sons Singapore Pte. Ltd., , [2014] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Fundamentals of silicon carbide technology : growth, characterization, devices and applications / / Tsunenobu Kimoto, James A. Cooper
| Fundamentals of silicon carbide technology : growth, characterization, devices and applications / / Tsunenobu Kimoto, James A. Cooper |
| Autore | Kimoto Tsunenobu <1963-> |
| Pubbl/distr/stampa | Singapore : , : John Wiley & Sons Singapore Pte. Ltd., , [2014] |
| Descrizione fisica | 1 online resource (555 p.) |
| Disciplina | 621.3815/2 |
| Altri autori (Persone) | CooperJames A. <1946-> |
| Soggetto topico |
Silicon carbide
Semiconductors Integrated circuits |
| ISBN |
1-118-31353-4
1-118-31354-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
About the Authors xi -- Preface xiii -- 1 Introduction 1 -- 1.1 Progress in Electronics 1 -- 1.2 Features and Brief History of Silicon Carbide 3 -- 1.2.1 Early History 3 -- 1.2.2 Innovations in SiC Crystal Growth 4 -- 1.2.3 Promise and Demonstration of SiC Power Devices 5 -- 1.3 Outline of This Book 6 -- References 6 -- 2 Physical Properties of Silicon Carbide 11 -- 2.1 Crystal Structure 11 -- 2.2 Electrical and Optical Properties 16 -- 2.2.1 Band Structure 16 -- 2.2.2 Optical Absorption Coefficient and Refractive Index 18 -- 2.2.3 Impurity Doping and Carrier Density 20 -- 2.2.4 Mobility 23 -- 2.2.5 Drift Velocity 27 -- 2.2.6 Breakdown Electric Field Strength 28 -- 2.3 Thermal and Mechanical Properties 30 -- 2.3.1 Thermal Conductivity 30 -- 2.3.2 Phonons 31 -- 2.3.3 Hardness and Mechanical Properties 32 -- 2.4 Summary 32 -- References 33 -- 3 Bulk Growth of Silicon Carbide 39 -- 3.1 Sublimation Growth 39 -- 3.1.1 Phase Diagram of Si-C 39 -- 3.1.2 Basic Phenomena Occurring during the Sublimation (Physical Vapor Transport) Method 39 -- 3.1.3 Modeling and Simulation 44 -- 3.2 Polytype Control in Sublimation Growth 46 -- 3.3 Defect Evolution and Reduction in Sublimation Growth 50 -- 3.3.1 Stacking Faults 50 -- 3.3.2 Micropipe Defects 51 -- 3.3.3 Threading Screw Dislocation 53 -- 3.3.4 Threading Edge Dislocation and Basal Plane Dislocation 54 -- 3.3.5 Defect Reduction 57 -- 3.4 Doping Control in Sublimation Growth 59 -- 3.4.1 Impurity Incorporation 59 -- 3.4.2 n-Type Doping 61 -- 3.4.3 p-Type Doping 61 -- 3.4.4 Semi-Insulating 62 -- 3.5 High-Temperature Chemical Vapor Deposition 64 -- 3.6 Solution Growth 66 -- 3.7 3C-SiC Wafers Grown by Chemical Vapor Deposition 67 -- 3.8 Wafering and Polishing 67 -- 3.9 Summary 69 -- References 69 -- 4 Epitaxial Growth of Silicon Carbide 75 -- 4.1 Fundamentals of SiC Homoepitaxy 75 -- 4.1.1 Polytype Replication in SiC Epitaxy 75 -- 4.1.2 Theoretical Model of SiC Homoepitaxy 78 -- 4.1.3 Growth Rate and Modeling 83 -- 4.1.4 Surface Morphology and Step Dynamics 87.
4.1.5 Reactor Design for SiC Epitaxy 89 -- 4.2 Doping Control in SiC CVD 90 -- 4.2.1 Background Doping 90 -- 4.2.2 n-Type Doping 91 -- 4.2.3 p-Type Doping 92 -- 4.3 Defects in SiC Epitaxial Layers 93 -- 4.3.1 Extended Defects 93 -- 4.3.2 Deep Levels 102 -- 4.4 Fast Homoepitaxy of SiC 105 -- 4.5 SiC Homoepitaxy on Non-standard Planes 107 -- 4.5.1 SiC Homoepitaxy on Nearly On-Axis {0001} 107 -- 4.5.2 SiC Homoepitaxy on Non-basal Planes 108 -- 4.5.3 Embedded Homoepitaxy of SiC 110 -- 4.6 SiC Homoepitaxy by Other Techniques 110 -- 4.7 Heteroepitaxy of 3C-SiC 111 -- 4.7.1 Heteroepitaxial Growth of 3C-SiC on Si 111 -- 4.7.2 Heteroepitaxial Growth of 3C-SiC on Hexagonal SiC 114 -- 4.8 Summary 114 -- References 115 -- 5 Characterization Techniques and Defects in Silicon Carbide 125 -- 5.1 Characterization Techniques 125 -- 5.1.1 Photoluminescence 126 -- 5.1.2 Raman Scattering 134 -- 5.1.3 Hall Effect and Capacitance-Voltage Measurements 136 -- 5.1.4 Carrier Lifetime Measurements 137 -- 5.1.5 Detection of Extended Defects 142 -- 5.1.6 Detection of Point Defects 150 -- 5.2 Extended Defects in SiC 155 -- 5.2.1 Major Extended Defects in SiC 155 -- 5.2.2 Bipolar Degradation 156 -- 5.2.3 Effects of Extended Defects on SiC Device Performance 161 -- 5.3 Point Defects in SiC 165 -- 5.3.1 Major Deep Levels in SiC 165 -- 5.3.2 Carrier Lifetime Killer 174 -- 5.4 Summary 179 -- References 180 -- 6 Device Processing of Silicon Carbide 189 -- 6.1 Ion Implantation 189 -- 6.1.1 Selective Doping Techniques 190 -- 6.1.2 Formation of an n-Type Region by Ion Implantation 191 -- 6.1.3 Formation of a p-Type Region by Ion Implantation 197 -- 6.1.4 Formation of a Semi-Insulating Region by Ion Implantation 200 -- 6.1.5 High-Temperature Annealing and Surface Roughening 201 -- 6.1.6 Defect Formation by Ion Implantation and Subsequent Annealing 203 -- 6.2 Etching 208 -- 6.2.1 Reactive Ion Etching 208 -- 6.2.2 High-Temperature Gas Etching 211 -- 6.2.3 Wet Etching 212 -- 6.3 Oxidation and Oxide/SiC Interface Characteristics 212. 6.3.1 Oxidation Rate 213 -- 6.3.2 Dielectric Properties of Oxides 215 -- 6.3.3 Structural and Physical Characterization of Thermal Oxides 217 -- 6.3.4 Electrical Characterization Techniques and Their Limitations 219 -- 6.3.5 Properties of the Oxide/SiC Interface and Their Improvement 234 -- 6.3.6 Interface Properties of Oxide/SiC on Various Faces 241 -- 6.3.7 Mobility-Limiting Factors 244 -- 6.4 Metallization 248 -- 6.4.1 Schottky Contacts on n-Type and p-Type SiC 249 -- 6.4.2 Ohmic Contacts to n-Type and p-Type SiC 255 -- 6.5 Summary 262 -- References 263 -- 7 Unipolar and Bipolar Power Diodes 277 -- 7.1 Introduction to SiC Power Switching Devices 277 -- 7.1.1 Blocking Voltage 277 -- 7.1.2 Unipolar Power Device Figure of Merit 280 -- 7.1.3 Bipolar Power Device Figure of Merit 281 -- 7.2 Schottky Barrier Diodes (SBDs) 282 -- 7.3 pn and pin Junction Diodes 286 -- 7.3.1 High-Level Injection and the Ambipolar Diffusion Equation 288 -- 7.3.2 Carrier Densities in the "i" Region 290 -- 7.3.3 Potential Drop across the "i" Region 292 -- 7.3.4 Current-Voltage Relationship 293 -- 7.4 Junction-Barrier Schottky (JBS) and Merged pin-Schottky (MPS) Diodes 296 -- References 300 -- 8 Unipolar Power Switching Devices 301 -- 8.1 Junction Field-Effect Transistors (JFETs) 301 -- 8.1.1 Pinch-Off Voltage 302 -- 8.1.2 Current-Voltage Relationship 303 -- 8.1.3 Saturation Drain Voltage 304 -- 8.1.4 Specific On-Resistance 305 -- 8.1.5 Enhancement-Mode and Depletion-Mode Operation 308 -- 8.1.6 Power JFET Implementations 311 -- 8.2 Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) 312 -- 8.2.1 Review of MOS Electrostatics 312 -- 8.2.2 MOS Electrostatics with Split Quasi-Fermi Levels 315 -- 8.2.3 MOSFET Current-Voltage Relationship 316 -- 8.2.4 Saturation Drain Voltage 319 -- 8.2.5 Specific On-Resistance 319 -- 8.2.6 Power MOSFET Implementations: DMOSFETs and UMOSFETs 320 -- 8.2.7 Advanced DMOSFET Designs 321 -- 8.2.8 Advanced UMOS Designs 324 -- 8.2.9 Threshold Voltage Control 326. 8.2.10 Inversion Layer Electron Mobility 329 -- 8.2.11 Oxide Reliability 339 -- 8.2.12 MOSFET Transient Response 342 -- References 350 -- 9 Bipolar Power Switching Devices 353 -- 9.1 Bipolar Junction Transistors (BJTs) 353 -- 9.1.1 Internal Currents 353 -- 9.1.2 Gain Parameters 355 -- 9.1.3 Terminal Currents 357 -- 9.1.4 Current-Voltage Relationship 359 -- 9.1.5 High-Current Effects in the Collector: Saturation and Quasi-Saturation 360 -- 9.1.6 High-Current Effects in the Base: the Rittner Effect 366 -- 9.1.7 High-Current Effects in the Collector: Second Breakdown and the Kirk Effect 368 -- 9.1.8 Common Emitter Current Gain: Temperature Dependence 370 -- 9.1.9 Common Emitter Current Gain: the Effect of Recombination 371 -- 9.1.10 Blocking Voltage 373 -- 9.2 Insulated-Gate Bipolar Transistors (IGBTs) 373 -- 9.2.1 Current-Voltage Relationship 374 -- 9.2.2 Blocking Voltage 384 -- 9.2.3 Switching Characteristics 385 -- 9.2.4 Temperature Dependence of Parameters 391 -- 9.3 Thyristors 392 -- 9.3.1 Forward Conducting Regime 393 -- 9.3.2 Forward Blocking Regime and Triggering 398 -- 9.3.3 The Turn-On Process 404 -- 9.3.4 dV/dt Triggering 406 -- 9.3.5 The dI/dt Limitation 407 -- 9.3.6 The Turn-Off Process 407 -- 9.3.7 Reverse-Blocking Mode 415 -- References 415 -- 10 Optimization and Comparison of Power Devices 417 -- 10.1 Blocking Voltage and Edge Terminations for SiC Power Devices 417 -- 10.1.1 Impact Ionization and Avalanche Breakdown 418 -- 10.1.2 Two-Dimensional Field Crowding and Junction Curvature 423 -- 10.1.3 Trench Edge Terminations 424 -- 10.1.4 Beveled Edge Terminations 425 -- 10.1.5 Junction Termination Extensions (JTEs) 427 -- 10.1.6 Floating Field-Ring (FFR) Terminations 429 -- 10.1.7 Multiple-Floating-Zone (MFZ) JTE and Space-Modulated (SM) JTE 432 -- 10.2 Optimum Design of Unipolar Drift Regions 435 -- 10.2.1 Vertical Drift Regions 435 -- 10.2.2 Lateral Drift Regions 438 -- 10.3 Comparison of Device Performance 440 -- References 443 -- 11 Applications of Silicon Carbide Devices in Power Systems 445. 11.1 Introduction to Power Electronic Systems 445 -- 11.2 Basic Power Converter Circuits 446 -- 11.2.1 Line-Frequency Phase-Controlled Rectifiers and Inverters 446 -- 11.2.2 Switch-Mode DC-DC Converters 450 -- 11.2.3 Switch-Mode Inverters 453 -- 11.3 Power Electronics for Motor Drives 458 -- 11.3.1 Introduction to Electric Motors and Motor Drives 458 -- 11.3.2 DC Motor Drives 459 -- 11.3.3 Induction Motor Drives 460 -- 11.3.4 Synchronous Motor Drives 465 -- 11.3.5 Motor Drives for Hybrid and Electric Vehicles 468 -- 11.4 Power Electronics for Renewable Energy 471 -- 11.4.1 Inverters for Photovoltaic Power Sources 471 -- 11.4.2 Converters for Wind Turbine Power Sources 472 -- 11.5 Power Electronics for Switch-Mode Power Supplies 476 -- 11.6 Performance Comparison of SiC and Silicon Power Devices 481 -- References 486 -- 12 Specialized Silicon Carbide Devices and Applications 487 -- 12.1 Microwave Devices 487 -- 12.1.1 Metal-Semiconductor Field-Effect Transistors (MESFETs) 487 -- 12.1.2 Static Induction Transistors (SITs) 489 -- 12.1.3 Impact Ionization Avalanche Transit-Time (IMPATT) Diodes 496 -- 12.2 High-Temperature Integrated Circuits 497 -- 12.3 Sensors 499 -- 12.3.1 Micro-Electro-Mechanical Sensors (MEMS) 499 -- 12.3.2 Gas Sensors 500 -- 12.3.3 Optical Detectors 504 -- References 509 -- Appendix A Incomplete Dopant Ionization in 4H-SiC 511 -- References 515 -- Appendix B Properties of the Hyperbolic Functions 517 -- Appendix C Major Physical Properties of Common SiC Polytypes 521 -- C.1 Properties 521 -- C.2 Temperature and/or Doping Dependence of Major Physical Properties 522 -- References 523 -- Index 525. |
| Altri titoli varianti | Fundamentals of SiC technology |
| Record Nr. | UNINA-9910820808203321 |
|
Kimoto Tsunenobu <1963->
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| Singapore : , : John Wiley & Sons Singapore Pte. Ltd., , [2014] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Islamic commercial law / / Muhammad Yusuf Saleem
| Islamic commercial law / / Muhammad Yusuf Saleem |
| Autore | Saleem Muhammad Yusuf |
| Pubbl/distr/stampa | Singapore : , : John Wiley & Sons Singapore Pte. Ltd., , 2013 |
| Descrizione fisica | 1 online resource (194 pages) : illustrations |
| Disciplina | 346.16707 |
| Collana | Wiley finance |
| Soggetto topico | Commercial law (Islamic law) |
| ISBN |
1-119-19895-X
1-283-83526-6 1-118-50404-6 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Islamic Commercial Law; Copyright; Contents; Preface; List of Abbreviations; Acknowledgments; Introduction: An Overview of Prohibited Elements; Usury (Riba); Ambiguities in a Contract (Gharar); Gambling (Maysir); Prohibited (Haram) Properties; 1: The Contract of Sale (Bay'); Introduction; The Pillars of a Sale Contract; Expression in a Sale Contract; The Parties to a Sale Contract; The Subject Matter and the Price in a Sale Contract; Prohibited Sales and Practices; Price Determination (al-Tas'eer); Two Sales in One Sale; Stopping a Seller (Talqi al-Rukban); Contentious Sales
Earnest Money (Bay' al-'Urbun); Is 'Urbun the Sale of Right or a Penalty?; The Sale of Debt (Bay' al-Dayn); Repurchase Sale (Bay' al-'Einah); Tripartite Sale (Bay' al-Tawarruq); Chapter Questions; True/False; Short Answer; Notes; 2: Types and Classifications of Sales; Introduction; Trust Sales (Buyu' al-amanah); Cost-plus-Profit Sale (Murabahah); Sale With No Profit (Tawliyah); Sale With Loss (Wadi'ah); Deferred Payment Sale (Bay' Bi-thaman Aajil); Islamic Banks and a Sale Contract; Future Commodity Sale (Bay' al-Salam); Manufacturing Sale (Bay'al-Istisna'); Options of Istisna' Islamic Banks and Istisna' Contracts; Currency Exchange (Bay' al-Sarf); Chapter Questions; True/False; Short Answer; Notes; 3: The Contracts of Employment and Lease (Ijarah), Borrowing (I'arah), and Reward (Ja'alah); Introduction; The Pillars of the Ijarah Contract; The Types of Ijarah Contract; Islamic Banks and Leases; Termination of Ijarah; The Contract of Borrowing Things (al-I'arah); The Contract of Reward for Service (al-Ja'alah); Chapter Questions; True/False; Short Answer; Notes; 4: The Contract of Agency (Wakalah); Introduction; The Pillars of an Agency (Wakalah) Contract The Types of Agency; Particular Agency (al-Wakalah al-Khaassah); General Agency (al-Wakalah al-'Aammah); Restricted Agency (al-Wakalah al-Mu'allaqa); Unrestricted Agency (al-Wakalah al-Mutlaqah); Agency in Sale; Agency in Purchase; The Effects and the Rights and Liabilities of the Contracting Parties; An Agent Appointing Another Agent; Unauthorised Agency (al-Fadhalah); Termination of an Agency; The Differences Between the Contracts of Wakalah and Employment (Ijarah); The Differences Between the Contracts of Wakalah and Reward (Ja'alah); Chapter Questions; True/False; Short Answer; Notes 5: The Contract of Loan (al-Qard); Introduction; Loan (Qard), Debt (Dayn), and Borrowing Things (I'arah); A Loan That Provides Conditional Benefit to the Lender; Waiting or Giving Time to a Borrower Is a Commendable Act; Chapter Questions; True/False; Short Answer; Notes; 6: The Contract of Safekeeping (al-Wadi'ah); Introduction; The Pillars of Wadi'ah Contracts; Relationship Between the Parties; When Is the Depository Held Liable?; Using Deposited Money for Investment; Wadi'ah and Islamic Banks; Termination of Wadi'ah; The Differences Between the Contracts of Wadi'ah and Qard; Chapter Questions |
| Record Nr. | UNINA-9910141367703321 |
|
Saleem Muhammad Yusuf
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| Singapore : , : John Wiley & Sons Singapore Pte. Ltd., , 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Polarimetric scattering and SAR information retrieval / / Ya-Qiu Jin, Feng Xu
| Polarimetric scattering and SAR information retrieval / / Ya-Qiu Jin, Feng Xu |
| Autore | Jin Ya-Qiu |
| Pubbl/distr/stampa | Singapore : , : John Wiley & Sons Singapore Pte. Ltd., , 2013 |
| Descrizione fisica | 1 online resource (413 p.) |
| Disciplina | 621.3848/5 |
| Altri autori (Persone) | XuFeng |
| Soggetto topico |
Synthetic aperture radar
Electromagnetic waves - Scattering |
| ISBN |
1-118-18816-0
1-299-31591-7 1-118-18815-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Basics of polarimetric scattering -- Vector radiative transfer -- Imaging simulation of polarimetric SAR: mapping and projection algorithm -- Bistatic SAR: simulation, processing, and interpretation -- Radar polarimetry and deorientation theory -- Inversions from polarimetric SAR images -- Automatic reconstruction of building objects from multi-aspect SAR images -- Faraday rotation on polarimetric SAR image at UHF/VHF bands -- Change detection from multi-temporal SAR images -- Temporal Mueller matrix for polarimetric scattering -- Fast computation of composite scattering from an electrically large target over a randomly rough surface -- Reconstruction of a 3D complex target using downward-looking step-frequency radar -- Index. |
| Record Nr. | UNINA-9910139057503321 |
|
Jin Ya-Qiu
|
||
| Singapore : , : John Wiley & Sons Singapore Pte. Ltd., , 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Polarimetric scattering and SAR information retrieval / / Ya-Qiu Jin, Feng Xu
| Polarimetric scattering and SAR information retrieval / / Ya-Qiu Jin, Feng Xu |
| Autore | Jin Ya-Qiu |
| Pubbl/distr/stampa | Singapore : , : John Wiley & Sons Singapore Pte. Ltd., , 2013 |
| Descrizione fisica | 1 online resource (413 pages) |
| Disciplina | 621.3848/5 |
| Altri autori (Persone) | XuFeng |
| Soggetto topico |
Synthetic aperture radar
Electromagnetic waves - Scattering |
| ISBN |
1-118-18816-0
1-299-31591-7 1-118-18815-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Basics of polarimetric scattering -- Vector radiative transfer -- Imaging simulation of polarimetric SAR: mapping and projection algorithm -- Bistatic SAR: simulation, processing, and interpretation -- Radar polarimetry and deorientation theory -- Inversions from polarimetric SAR images -- Automatic reconstruction of building objects from multi-aspect SAR images -- Faraday rotation on polarimetric SAR image at UHF/VHF bands -- Change detection from multi-temporal SAR images -- Temporal Mueller matrix for polarimetric scattering -- Fast computation of composite scattering from an electrically large target over a randomly rough surface -- Reconstruction of a 3D complex target using downward-looking step-frequency radar -- Index. |
| Record Nr. | UNINA-9910814274203321 |
|
Jin Ya-Qiu
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||
| Singapore : , : John Wiley & Sons Singapore Pte. Ltd., , 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
The principles of banking / / Moorad Choudhry
| The principles of banking / / Moorad Choudhry |
| Autore | Choudhry Moorad |
| Edizione | [1st edition] |
| Pubbl/distr/stampa | Solaris South Tower, Singapore : , : John Wiley & Sons Singapore Pte. Ltd., , 2012 |
| Descrizione fisica | 1 online resource (914 p.) |
| Disciplina |
332.1
332.1/2 332.10681 |
| Collana | Wiley Finance |
| Soggetto topico |
Asset-liability management
Bank liquidity Global Financial Crisis, 2008-2009 |
| Soggetto genere / forma | Electronic books. |
| ISBN |
0-470-82702-5
1-280-67924-7 9786613656179 0-470-82701-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
THE PRINCIPLES OF BANKING; Contents; Forewords; Preface; Acknowledgements; About the Author; PART I: A PRIMER ON BANKING; CHAPTER 1: A primer on bank business and balance sheet risk; AN INTRODUCTION TO BANKING; Interest Income; Fees and Commissions; Trading Income; Costs; THE CAPITAL MARKETS; BANKING BUSINESS AND CAPITAL; Capital; Banking and Trading Books; FINANCIAL STATEMENTS AND RATIOS; The Balance Sheet; Profit & Loss Report; THE MONEY MARKETS; Financial Transactions; Characteristics of the Money Market; Money Market Conventions; BANK CASH FLOWS AND OTHER BASIC CONCEPTS
Bank Cash Flows: The Conventional Bank Business ModelMeasuring Return; Loan Valuation; Capital Requirement; RISK EXPOSURES IN BANKING; The Main Bank Risks; The Risk Management Function; DRIVERS OF CREDIT RISK; Parameters of Credit Risk Models; Credit Rating; Correlation; MACRO-LEVEL RISK MANAGEMENT AND STRATEGY; Setting the Formal Risk-Reward Profile; Target Return Rates; Dynamic Risk Management; Bank Risk Management Structure and Organisation; APPENDIX 1.1: SUMMARY OVERVIEW OF BANK PRODUCT LINE; DEFINITION OF BANKING; PRODUCT LINE; Interest-bearing and Non-interest-bearing Current Accounts Certificates of DepositCommercial Paper; Asset-backed Commercial Paper; Foreign Exchange; Government Bonds; Floating Rate Notes; Repos; Letter of Credit; Structured Deposits; Liquidity Facilities; REFERENCES; CHAPTER 2: Bank regulatory capital; BANK REGULATORY CAPITAL; REGULATORY CAPITAL REQUIREMENTS; THE BASEL I RULES; THE BASEL II RULES; Elements of the Basel II Rules; IMPLEMENTATION APPROACHES; IMPACT ON SPECIFIC SECTORS; Sovereign Assets; Bank Assets; Structured Finance Assets; Liquidity Facilities; Corporate and Retail Lending; Credit Derivatives; Basel II and Securitisation OPERATIONAL RISKThe Nature of Operational Risk; Calculation Methodology; Insurance Policy Mitigation; BASEL III; Initial Impact; Overview; Summary of Basel III Requirements; Definition of Capital; THE CAPITAL CALCULATION AND RETURN ON CAPITAL TARGETS; Credit Risk and Capital Calculation; Defining Capital in Portfolio Loss Distribution Terms; The Return on Capital Target; BIBLIOGRAPHY; CHAPTER 3: Banking and credit risk; CREDIT RISK PRINCIPLES; CREDIT RISK; Credit Default Risk; Credit Spread Risk; CREDIT RATINGS; Purpose of Credit Ratings; RATINGS CHANGES OVER TIME; Ratings Transition Matrix Structured Finance Rating TransitionsUNDERSTANDING CREDIT RISK; Definition of Credit Risk; The Asset Exposure; Recovery Value; Collateral and Third-Party Guarantees; EXTERNAL RATING AGENCY CREDIT RATINGS; Credit Analysis; Financial Analysis; Industry-specific Analysis; BANK INTERNAL CREDIT RATINGS; CREDIT VALUE-at-RISK; Time Horizon; Data Inputs; VARIANCE-COVARIANCE CREDIT VaR; Methodology; Time Horizon; Calculating the Credit VaR; CREDIT LIMIT SETTING AND RATIONALE; Credit Limit Principles; Credit Limit Setting; LOAN ORIGINATION PROCESS STANDARDS; Credit Process; Capital Allocation Process Collateral Enablement |
| Record Nr. | UNINA-9910166638703321 |
|
Choudhry Moorad
|
||
| Solaris South Tower, Singapore : , : John Wiley & Sons Singapore Pte. Ltd., , 2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
The principles of banking / / Moorad Choudhry
| The principles of banking / / Moorad Choudhry |
| Autore | Choudhry Moorad |
| Edizione | [1st edition] |
| Pubbl/distr/stampa | Solaris South Tower, Singapore : , : John Wiley & Sons Singapore Pte. Ltd., , 2012 |
| Descrizione fisica | 1 online resource (914 p.) |
| Disciplina |
332.1
332.1/2 332.10681 |
| Collana | Wiley Finance |
| Soggetto topico |
Asset-liability management
Bank liquidity Global Financial Crisis, 2008-2009 |
| ISBN |
0-470-82702-5
1-280-67924-7 9786613656179 0-470-82701-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
THE PRINCIPLES OF BANKING; Contents; Forewords; Preface; Acknowledgements; About the Author; PART I: A PRIMER ON BANKING; CHAPTER 1: A primer on bank business and balance sheet risk; AN INTRODUCTION TO BANKING; Interest Income; Fees and Commissions; Trading Income; Costs; THE CAPITAL MARKETS; BANKING BUSINESS AND CAPITAL; Capital; Banking and Trading Books; FINANCIAL STATEMENTS AND RATIOS; The Balance Sheet; Profit & Loss Report; THE MONEY MARKETS; Financial Transactions; Characteristics of the Money Market; Money Market Conventions; BANK CASH FLOWS AND OTHER BASIC CONCEPTS
Bank Cash Flows: The Conventional Bank Business ModelMeasuring Return; Loan Valuation; Capital Requirement; RISK EXPOSURES IN BANKING; The Main Bank Risks; The Risk Management Function; DRIVERS OF CREDIT RISK; Parameters of Credit Risk Models; Credit Rating; Correlation; MACRO-LEVEL RISK MANAGEMENT AND STRATEGY; Setting the Formal Risk-Reward Profile; Target Return Rates; Dynamic Risk Management; Bank Risk Management Structure and Organisation; APPENDIX 1.1: SUMMARY OVERVIEW OF BANK PRODUCT LINE; DEFINITION OF BANKING; PRODUCT LINE; Interest-bearing and Non-interest-bearing Current Accounts Certificates of DepositCommercial Paper; Asset-backed Commercial Paper; Foreign Exchange; Government Bonds; Floating Rate Notes; Repos; Letter of Credit; Structured Deposits; Liquidity Facilities; REFERENCES; CHAPTER 2: Bank regulatory capital; BANK REGULATORY CAPITAL; REGULATORY CAPITAL REQUIREMENTS; THE BASEL I RULES; THE BASEL II RULES; Elements of the Basel II Rules; IMPLEMENTATION APPROACHES; IMPACT ON SPECIFIC SECTORS; Sovereign Assets; Bank Assets; Structured Finance Assets; Liquidity Facilities; Corporate and Retail Lending; Credit Derivatives; Basel II and Securitisation OPERATIONAL RISKThe Nature of Operational Risk; Calculation Methodology; Insurance Policy Mitigation; BASEL III; Initial Impact; Overview; Summary of Basel III Requirements; Definition of Capital; THE CAPITAL CALCULATION AND RETURN ON CAPITAL TARGETS; Credit Risk and Capital Calculation; Defining Capital in Portfolio Loss Distribution Terms; The Return on Capital Target; BIBLIOGRAPHY; CHAPTER 3: Banking and credit risk; CREDIT RISK PRINCIPLES; CREDIT RISK; Credit Default Risk; Credit Spread Risk; CREDIT RATINGS; Purpose of Credit Ratings; RATINGS CHANGES OVER TIME; Ratings Transition Matrix Structured Finance Rating TransitionsUNDERSTANDING CREDIT RISK; Definition of Credit Risk; The Asset Exposure; Recovery Value; Collateral and Third-Party Guarantees; EXTERNAL RATING AGENCY CREDIT RATINGS; Credit Analysis; Financial Analysis; Industry-specific Analysis; BANK INTERNAL CREDIT RATINGS; CREDIT VALUE-at-RISK; Time Horizon; Data Inputs; VARIANCE-COVARIANCE CREDIT VaR; Methodology; Time Horizon; Calculating the Credit VaR; CREDIT LIMIT SETTING AND RATIONALE; Credit Limit Principles; Credit Limit Setting; LOAN ORIGINATION PROCESS STANDARDS; Credit Process; Capital Allocation Process Collateral Enablement |
| Record Nr. | UNINA-9910677775203321 |
|
Choudhry Moorad
|
||
| Solaris South Tower, Singapore : , : John Wiley & Sons Singapore Pte. Ltd., , 2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
