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Optical sensors [[electronic resource] ] : asics and applications / / Jörg Haus
Optical sensors [[electronic resource] ] : asics and applications / / Jörg Haus
Autore Haus Jörg
Pubbl/distr/stampa Weinheim, : Wiley-VCH Verlag GmbH & Co., 2010
Descrizione fisica 1 online resource (191 p.)
Disciplina 681.25
Soggetto topico Optical detectors
Optoelectronic devices
Soggetto genere / forma Electronic books.
ISBN 1-282-68853-7
9786612688539
3-527-62943-2
3-527-62944-0
Classificazione 530
ZQ 3120
ZQ 3910
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Optical Sensors; Contents; Preface; Introduction; References; Part One: The Optical Sensor Construction Kit; 2: Light Sources; 2.1 Important Properties of Light Sources; 2.2 Thermal Light Sources; 2.3 Line Sources; 2.4 Light Emitting Diodes (LEDs); 2.5 Lasers; 3: Photodetectors; 3.1 Photomultipliers; 3.2 Photodiodes; 3.3 Other Detector Types; 3.4 Imaging Detectors; 3.5 Detector Noise; 4: Optical Elements; 4.1 Optical Materials; 4.2 Mirrors, Prisms and Lenses; 4.3 Dispersive Elements: Prisms and Gratings; 4.4 Optical Filters; 4.5 Polarizers; 4.6 Optical Fibers; 4.7 Modulators; References
Part Two: Optical Sensors and Their Applications5: Eyes: The Examples of Nature; 5.1 The Compound Eyes of Insects; 5.2 Nature's Example: The Human Eye; 6: Optical Sensor Concepts; 6.1 Switches; 6.1.1 Light Barriers; 6.1.2 Rain Sensor; 6.2 Spatial Dimensions; 6.2.1 Distance; 6.2.2 Displacement; 6.2.3 Velocity; 6.2.4 Angular Velocity; 6.3 Strain; 6.4 Temperature; 6.5 Species Determination and Concentration; 6.5.1 Spectrometry; 6.5.2 Polarimetry; 6.5.3 Ellipsometry; 6.5.4 Refractometry; 6.5.5 Particle Density and Particle Number; 6.5.6 Fluorescence Detection; 6.6 Surface Topography
6.6.1 Chromatic Confocal Sensors6.6.2 Conoscopic Holography; 6.6.3 Multiwavelength Interferometry (MWLI); 6.6.4 White-Light Interferometry; 6.6.5 Near-Field Optical Microscopy; 6.6.6 Contouring: Structured-Light Techniques; 6.6.7 Concepts: Cross-Correlation Analysis and 2D Fourier-Transform Techniques; 6.7 Deformation and Vibration Analysis; 6.7.1 Laser Vibrometers; 6.7.2 Speckle-Pattern Interferometry; 6.7.3 Holographic Interferometry; 6.8 Wavefront Sensing and Adaptive Optics; 6.9 Determination of the Sun Angle; 6.10 Determination of Age; References
Part Three: Optics and Sensors at Work: A Laser-Spectroscopic Experiment7: The Measurement Problem; 8: The Physical Principles behind the Experiment; 9: Spectroscopic Setups of the Experiment; 9.1 The Single-Step Approach; 9.2 The Two-Step Approach; References; Summary; Glossary; Index
Record Nr. UNINA-9910139471303321
Haus Jörg  
Weinheim, : Wiley-VCH Verlag GmbH & Co., 2010
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Optical sensors [[electronic resource] ] : asics and applications / / Jörg Haus
Optical sensors [[electronic resource] ] : asics and applications / / Jörg Haus
Autore Haus Jörg
Pubbl/distr/stampa Weinheim, : Wiley-VCH Verlag GmbH & Co., 2010
Descrizione fisica 1 online resource (191 p.)
Disciplina 681.25
Soggetto topico Optical detectors
Optoelectronic devices
ISBN 1-282-68853-7
9786612688539
3-527-62943-2
3-527-62944-0
Classificazione 530
ZQ 3120
ZQ 3910
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Optical Sensors; Contents; Preface; Introduction; References; Part One: The Optical Sensor Construction Kit; 2: Light Sources; 2.1 Important Properties of Light Sources; 2.2 Thermal Light Sources; 2.3 Line Sources; 2.4 Light Emitting Diodes (LEDs); 2.5 Lasers; 3: Photodetectors; 3.1 Photomultipliers; 3.2 Photodiodes; 3.3 Other Detector Types; 3.4 Imaging Detectors; 3.5 Detector Noise; 4: Optical Elements; 4.1 Optical Materials; 4.2 Mirrors, Prisms and Lenses; 4.3 Dispersive Elements: Prisms and Gratings; 4.4 Optical Filters; 4.5 Polarizers; 4.6 Optical Fibers; 4.7 Modulators; References
Part Two: Optical Sensors and Their Applications5: Eyes: The Examples of Nature; 5.1 The Compound Eyes of Insects; 5.2 Nature's Example: The Human Eye; 6: Optical Sensor Concepts; 6.1 Switches; 6.1.1 Light Barriers; 6.1.2 Rain Sensor; 6.2 Spatial Dimensions; 6.2.1 Distance; 6.2.2 Displacement; 6.2.3 Velocity; 6.2.4 Angular Velocity; 6.3 Strain; 6.4 Temperature; 6.5 Species Determination and Concentration; 6.5.1 Spectrometry; 6.5.2 Polarimetry; 6.5.3 Ellipsometry; 6.5.4 Refractometry; 6.5.5 Particle Density and Particle Number; 6.5.6 Fluorescence Detection; 6.6 Surface Topography
6.6.1 Chromatic Confocal Sensors6.6.2 Conoscopic Holography; 6.6.3 Multiwavelength Interferometry (MWLI); 6.6.4 White-Light Interferometry; 6.6.5 Near-Field Optical Microscopy; 6.6.6 Contouring: Structured-Light Techniques; 6.6.7 Concepts: Cross-Correlation Analysis and 2D Fourier-Transform Techniques; 6.7 Deformation and Vibration Analysis; 6.7.1 Laser Vibrometers; 6.7.2 Speckle-Pattern Interferometry; 6.7.3 Holographic Interferometry; 6.8 Wavefront Sensing and Adaptive Optics; 6.9 Determination of the Sun Angle; 6.10 Determination of Age; References
Part Three: Optics and Sensors at Work: A Laser-Spectroscopic Experiment7: The Measurement Problem; 8: The Physical Principles behind the Experiment; 9: Spectroscopic Setups of the Experiment; 9.1 The Single-Step Approach; 9.2 The Two-Step Approach; References; Summary; Glossary; Index
Record Nr. UNINA-9910831088303321
Haus Jörg  
Weinheim, : Wiley-VCH Verlag GmbH & Co., 2010
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Optical sensors : asics and applications / / Jorg Haus
Optical sensors : asics and applications / / Jorg Haus
Autore Haus Jorg
Pubbl/distr/stampa Weinheim, : Wiley-VCH Verlag GmbH & Co., 2010
Descrizione fisica 1 online resource (191 p.)
Disciplina 681.25
Soggetto topico Optical detectors
Optoelectronic devices
ISBN 9786612688539
9781282688537
1282688537
9783527629435
3527629432
9783527629442
3527629440
Classificazione 530
ZQ 3120
ZQ 3910
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Optical Sensors; Contents; Preface; Introduction; References; Part One: The Optical Sensor Construction Kit; 2: Light Sources; 2.1 Important Properties of Light Sources; 2.2 Thermal Light Sources; 2.3 Line Sources; 2.4 Light Emitting Diodes (LEDs); 2.5 Lasers; 3: Photodetectors; 3.1 Photomultipliers; 3.2 Photodiodes; 3.3 Other Detector Types; 3.4 Imaging Detectors; 3.5 Detector Noise; 4: Optical Elements; 4.1 Optical Materials; 4.2 Mirrors, Prisms and Lenses; 4.3 Dispersive Elements: Prisms and Gratings; 4.4 Optical Filters; 4.5 Polarizers; 4.6 Optical Fibers; 4.7 Modulators; References
Part Two: Optical Sensors and Their Applications5: Eyes: The Examples of Nature; 5.1 The Compound Eyes of Insects; 5.2 Nature's Example: The Human Eye; 6: Optical Sensor Concepts; 6.1 Switches; 6.1.1 Light Barriers; 6.1.2 Rain Sensor; 6.2 Spatial Dimensions; 6.2.1 Distance; 6.2.2 Displacement; 6.2.3 Velocity; 6.2.4 Angular Velocity; 6.3 Strain; 6.4 Temperature; 6.5 Species Determination and Concentration; 6.5.1 Spectrometry; 6.5.2 Polarimetry; 6.5.3 Ellipsometry; 6.5.4 Refractometry; 6.5.5 Particle Density and Particle Number; 6.5.6 Fluorescence Detection; 6.6 Surface Topography
6.6.1 Chromatic Confocal Sensors6.6.2 Conoscopic Holography; 6.6.3 Multiwavelength Interferometry (MWLI); 6.6.4 White-Light Interferometry; 6.6.5 Near-Field Optical Microscopy; 6.6.6 Contouring: Structured-Light Techniques; 6.6.7 Concepts: Cross-Correlation Analysis and 2D Fourier-Transform Techniques; 6.7 Deformation and Vibration Analysis; 6.7.1 Laser Vibrometers; 6.7.2 Speckle-Pattern Interferometry; 6.7.3 Holographic Interferometry; 6.8 Wavefront Sensing and Adaptive Optics; 6.9 Determination of the Sun Angle; 6.10 Determination of Age; References
Part Three: Optics and Sensors at Work: A Laser-Spectroscopic Experiment7: The Measurement Problem; 8: The Physical Principles behind the Experiment; 9: Spectroscopic Setups of the Experiment; 9.1 The Single-Step Approach; 9.2 The Two-Step Approach; References; Summary; Glossary; Index
Record Nr. UNINA-9911020197003321
Haus Jorg  
Weinheim, : Wiley-VCH Verlag GmbH & Co., 2010
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Optoelectronic sensors [[electronic resource] /] / edited by Didier Decoster, Joseph Harari
Optoelectronic sensors [[electronic resource] /] / edited by Didier Decoster, Joseph Harari
Pubbl/distr/stampa London, UK, : ISTE
Descrizione fisica 1 online resource (290 p.)
Disciplina 681.25
681/.25
Altri autori (Persone) DecosterDidier <1948->
HarariJoseph <1961->
Collana ISTE
Soggetto topico Optical detectors
Image converters
Soggetto genere / forma Electronic books.
ISBN 1-282-68859-6
9786612688591
0-470-61163-4
0-470-39428-5
Classificazione ZQ 3120
ZN 5030
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Optoelectronic Sensors; Table of Contents; Preface; Chapter 1. Introduction to Semiconductor Photodetectors; 1.1. Brief overview of semiconductor materials; 1.2. Photodetection with semiconductors: basic phenomena; 1.3. Semiconductor devices; 1.4. p-n junctions and p-i-n structures; 1.5. Avalanche effect in p-i-n structures; 1.6. Schottky junction; 1.7. Metal-semiconductor-metal (MSM) structures; 1.8. Operational parameters of photodetectors; 1.8.1. Response coefficient, gain and quantum efficiency; 1.8.2. Temporal response and bandwidth; 1.8.3. Noise equivalent power; 1.8.4. Detectivity
Chapter 2. PIN Photodiodes for the Visible and Near-Infrared2.1. Introduction; 2.2. Physical processes occurring in photodiodes; 2.2.1. Electrostatics in PIN diodes: depleted region; 2.2.2. Mechanisms of electron-hole pair generation; 2.2.3. Transport mechanisms; 2.3. Static characteristics of PIN photodiodes; 2.3.1. I/V characteristics and definition of static parameters; 2.3.2. External quantum efficiency; 2.3.3. Dark current; 2.3.4. Breakdown voltage; 2.3.5. Saturation current; 2.4. Dynamic characteristics of PIN photodiodes; 2.4.1. Intrinsic limitations to the speed of response
2.4.2. Limitations due to the circuit2.4.3. Power-frequency compromise, Pf2 "law"; 2.5. Semiconductor materials used in PIN photodiodes for the visible and near-infrared; 2.5.1. Absorption of semiconductors in the range 400-1,800 nm; 2.5.2. From 400 to 900 nm: silicon and the GaAlAs/GaAs family; 2.5.3. From 900 to 1,800 nm: germanium, GaInAsP/InP; 2.6. New photodiode structures; 2.6.1. Beyond the limits of conventional PIN; 2.6.2. Photodiodes with collinear geometry; 2.6.3. Waveguide photodiodes; 2.6.4. Traveling-wave photodiodes; 2.6.5. Beyond PIN structures; 2.7. Bibliography
Chapter 3. Avalanche Photodiodes3.1. Introduction; 3.2. History; 3.3. The avalanche effect; 3.3.1. Ionization coefficients; 3.3.2. Multiplication factors; 3.3.3. Breakdown voltage; 3.4. Properties of avalanche photodiodes; 3.4.1. Current-voltage characteristics and photomultiplication; 3.4.2. Noise in avalanche photodiodes; 3.4.3. Signal-to-noise ratio in avalanche photodiodes; 3.4.4. Speed, response time and frequency response of avalanche photodiodes; 3.5. Technological considerations; 3.5.1. Guard ring junctions; 3.5.2. "Mesa" structures; 3.5.3. Crystal defects and microplasmas
3.6. Silicon avalanche photodiodes3.6.1. Si N+P APDs; 3.6.2. Si N+PπP+ APDs; 3.6.3. Si N+πPπP+ APDs; 3.6.4. SiPt-Si N Schottky APDs; 3.7. Avalanche photodiodes based on gallium arsenide; 3.8. Germanium avalanche photodiodes; 3.8.1. Ge APDs with N+P, N+NP and P+N structures for 1.3 μm communication; 3.8.2. Ge APDs with P+NN- structures for 1.55 μm communication; 3.9. Avalanche photodiodes based on indium phosphate (InP); 3.9.1. InGaAs/InP APDs for optical communications at 2.5 Gbit/s; 3.9.2. Fast InGaAs/InP APDs; 3.10. III-V low-noise avalanche photodiodes
3.10.1. III-V super-lattice or MQW APDs
Record Nr. UNINA-9910139624603321
London, UK, : ISTE
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Optoelectronic sensors [[electronic resource] /] / edited by Didier Decoster, Joseph Harari
Optoelectronic sensors [[electronic resource] /] / edited by Didier Decoster, Joseph Harari
Pubbl/distr/stampa London, UK, : ISTE
Descrizione fisica 1 online resource (290 p.)
Disciplina 681.25
681/.25
Altri autori (Persone) DecosterDidier <1948->
HarariJoseph <1961->
Collana ISTE
Soggetto topico Optical detectors
Image converters
ISBN 1-282-68859-6
9786612688591
0-470-61163-4
0-470-39428-5
Classificazione ZQ 3120
ZN 5030
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Optoelectronic Sensors; Table of Contents; Preface; Chapter 1. Introduction to Semiconductor Photodetectors; 1.1. Brief overview of semiconductor materials; 1.2. Photodetection with semiconductors: basic phenomena; 1.3. Semiconductor devices; 1.4. p-n junctions and p-i-n structures; 1.5. Avalanche effect in p-i-n structures; 1.6. Schottky junction; 1.7. Metal-semiconductor-metal (MSM) structures; 1.8. Operational parameters of photodetectors; 1.8.1. Response coefficient, gain and quantum efficiency; 1.8.2. Temporal response and bandwidth; 1.8.3. Noise equivalent power; 1.8.4. Detectivity
Chapter 2. PIN Photodiodes for the Visible and Near-Infrared2.1. Introduction; 2.2. Physical processes occurring in photodiodes; 2.2.1. Electrostatics in PIN diodes: depleted region; 2.2.2. Mechanisms of electron-hole pair generation; 2.2.3. Transport mechanisms; 2.3. Static characteristics of PIN photodiodes; 2.3.1. I/V characteristics and definition of static parameters; 2.3.2. External quantum efficiency; 2.3.3. Dark current; 2.3.4. Breakdown voltage; 2.3.5. Saturation current; 2.4. Dynamic characteristics of PIN photodiodes; 2.4.1. Intrinsic limitations to the speed of response
2.4.2. Limitations due to the circuit2.4.3. Power-frequency compromise, Pf2 "law"; 2.5. Semiconductor materials used in PIN photodiodes for the visible and near-infrared; 2.5.1. Absorption of semiconductors in the range 400-1,800 nm; 2.5.2. From 400 to 900 nm: silicon and the GaAlAs/GaAs family; 2.5.3. From 900 to 1,800 nm: germanium, GaInAsP/InP; 2.6. New photodiode structures; 2.6.1. Beyond the limits of conventional PIN; 2.6.2. Photodiodes with collinear geometry; 2.6.3. Waveguide photodiodes; 2.6.4. Traveling-wave photodiodes; 2.6.5. Beyond PIN structures; 2.7. Bibliography
Chapter 3. Avalanche Photodiodes3.1. Introduction; 3.2. History; 3.3. The avalanche effect; 3.3.1. Ionization coefficients; 3.3.2. Multiplication factors; 3.3.3. Breakdown voltage; 3.4. Properties of avalanche photodiodes; 3.4.1. Current-voltage characteristics and photomultiplication; 3.4.2. Noise in avalanche photodiodes; 3.4.3. Signal-to-noise ratio in avalanche photodiodes; 3.4.4. Speed, response time and frequency response of avalanche photodiodes; 3.5. Technological considerations; 3.5.1. Guard ring junctions; 3.5.2. "Mesa" structures; 3.5.3. Crystal defects and microplasmas
3.6. Silicon avalanche photodiodes3.6.1. Si N+P APDs; 3.6.2. Si N+PπP+ APDs; 3.6.3. Si N+πPπP+ APDs; 3.6.4. SiPt-Si N Schottky APDs; 3.7. Avalanche photodiodes based on gallium arsenide; 3.8. Germanium avalanche photodiodes; 3.8.1. Ge APDs with N+P, N+NP and P+N structures for 1.3 μm communication; 3.8.2. Ge APDs with P+NN- structures for 1.55 μm communication; 3.9. Avalanche photodiodes based on indium phosphate (InP); 3.9.1. InGaAs/InP APDs for optical communications at 2.5 Gbit/s; 3.9.2. Fast InGaAs/InP APDs; 3.10. III-V low-noise avalanche photodiodes
3.10.1. III-V super-lattice or MQW APDs
Record Nr. UNINA-9910831100903321
London, UK, : ISTE
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Optoelectronic sensors / / edited by Didier Decoster, Joseph Harari
Optoelectronic sensors / / edited by Didier Decoster, Joseph Harari
Pubbl/distr/stampa London, UK, : ISTE
Descrizione fisica 1 online resource (290 p.)
Disciplina 681.25
681/.25
Altri autori (Persone) DecosterDidier <1948->
HarariJoseph <1961->
Collana ISTE
Soggetto topico Optical detectors
Image converters
ISBN 1-282-68859-6
9786612688591
0-470-61163-4
0-470-39428-5
Classificazione ZQ 3120
ZN 5030
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Optoelectronic Sensors; Table of Contents; Preface; Chapter 1. Introduction to Semiconductor Photodetectors; 1.1. Brief overview of semiconductor materials; 1.2. Photodetection with semiconductors: basic phenomena; 1.3. Semiconductor devices; 1.4. p-n junctions and p-i-n structures; 1.5. Avalanche effect in p-i-n structures; 1.6. Schottky junction; 1.7. Metal-semiconductor-metal (MSM) structures; 1.8. Operational parameters of photodetectors; 1.8.1. Response coefficient, gain and quantum efficiency; 1.8.2. Temporal response and bandwidth; 1.8.3. Noise equivalent power; 1.8.4. Detectivity
Chapter 2. PIN Photodiodes for the Visible and Near-Infrared2.1. Introduction; 2.2. Physical processes occurring in photodiodes; 2.2.1. Electrostatics in PIN diodes: depleted region; 2.2.2. Mechanisms of electron-hole pair generation; 2.2.3. Transport mechanisms; 2.3. Static characteristics of PIN photodiodes; 2.3.1. I/V characteristics and definition of static parameters; 2.3.2. External quantum efficiency; 2.3.3. Dark current; 2.3.4. Breakdown voltage; 2.3.5. Saturation current; 2.4. Dynamic characteristics of PIN photodiodes; 2.4.1. Intrinsic limitations to the speed of response
2.4.2. Limitations due to the circuit2.4.3. Power-frequency compromise, Pf2 "law"; 2.5. Semiconductor materials used in PIN photodiodes for the visible and near-infrared; 2.5.1. Absorption of semiconductors in the range 400-1,800 nm; 2.5.2. From 400 to 900 nm: silicon and the GaAlAs/GaAs family; 2.5.3. From 900 to 1,800 nm: germanium, GaInAsP/InP; 2.6. New photodiode structures; 2.6.1. Beyond the limits of conventional PIN; 2.6.2. Photodiodes with collinear geometry; 2.6.3. Waveguide photodiodes; 2.6.4. Traveling-wave photodiodes; 2.6.5. Beyond PIN structures; 2.7. Bibliography
Chapter 3. Avalanche Photodiodes3.1. Introduction; 3.2. History; 3.3. The avalanche effect; 3.3.1. Ionization coefficients; 3.3.2. Multiplication factors; 3.3.3. Breakdown voltage; 3.4. Properties of avalanche photodiodes; 3.4.1. Current-voltage characteristics and photomultiplication; 3.4.2. Noise in avalanche photodiodes; 3.4.3. Signal-to-noise ratio in avalanche photodiodes; 3.4.4. Speed, response time and frequency response of avalanche photodiodes; 3.5. Technological considerations; 3.5.1. Guard ring junctions; 3.5.2. "Mesa" structures; 3.5.3. Crystal defects and microplasmas
3.6. Silicon avalanche photodiodes3.6.1. Si N+P APDs; 3.6.2. Si N+PπP+ APDs; 3.6.3. Si N+πPπP+ APDs; 3.6.4. SiPt-Si N Schottky APDs; 3.7. Avalanche photodiodes based on gallium arsenide; 3.8. Germanium avalanche photodiodes; 3.8.1. Ge APDs with N+P, N+NP and P+N structures for 1.3 μm communication; 3.8.2. Ge APDs with P+NN- structures for 1.55 μm communication; 3.9. Avalanche photodiodes based on indium phosphate (InP); 3.9.1. InGaAs/InP APDs for optical communications at 2.5 Gbit/s; 3.9.2. Fast InGaAs/InP APDs; 3.10. III-V low-noise avalanche photodiodes
3.10.1. III-V super-lattice or MQW APDs
Record Nr. UNINA-9911020373603321
London, UK, : ISTE
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Smart sensor systems [[electronic resource] /] / edited by Gerard C.M. Meijer
Smart sensor systems [[electronic resource] /] / edited by Gerard C.M. Meijer
Autore Meijer Gerard
Edizione [1st edition]
Pubbl/distr/stampa Chichester, U.K., : J. Wiley & Sons, 2008
Descrizione fisica 1 online resource (405 p.)
Disciplina 681
681.25
681/.25
Altri autori (Persone) MeijerG. C. M (Gerard C. M.)
Soggetto topico Detectors - Design and construction
Detectors - Industrial applications
Microcontrollers
Soggetto genere / forma Electronic books.
ISBN 1-282-00220-1
9786612002205
0-470-86693-4
0-470-86692-6
Classificazione ZQ 3120
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto SMART SENSORSYSTEMS; Contents; Preface; About the Authors; 1 Smart Sensor Systems: Why? Where? How?; 1.1 Third Industrial Revolution; 1.2 Definitions for Several Kinds of Sensors; 1.2.1 Definition of Sensors; 1.2.2 Definition of Smart Sensors; 1.2.3 Definition of Integrated Smart Sensors; 1.2.4 Definition of Integrated Smart Sensor Systems; 1.3 Automated Production Machines; 1.4 Automated Consumer Products; 1.4.1 Smart Cars; 1.4.2 Smart Homes; 1.4.3 Smart Domestic Appliances; 1.4.4 Smart Toys; 1.5 Conclusion; References
2 Interface Electronics and Measurement Techniques for Smart Sensor Systems2.1 Introduction; 2.2 Object-oriented Design of Sensor Systems; 2.3 Sensing Elements and Their Parasitic Effects; 2.3.1 Compatibility of Packaging; 2.3.2 Effect of Cable and Wire Impedances; 2.3.3 Parasitic and Cross-effects in Sensing Elements; 2.3.4 Excitation Signals for Sensing Elements; 2.4 Analog-to-digital Conversion; 2.5 High Accuracy Over a Wide Dynamic Range; 2.5.1 Systematic, Random and Multi-path Errors; 2.5.2 Advanced Chopping Techniques; 2.5.3 Autocalibration; 2.5.4 Dynamic Amplification
2.5.5 Dynamic Division and Other Dynamic Signal-processing Techniques2.6 A Universal Transducer Interface; 2.6.1 Description of the Interface Chip and the Applied Measurement Techniques; 2.6.2 Realization and Experimental Results; 2.7 Summary and Future Trends; 2.7.1 Summary; 2.7.2 Future Trends; Problems; References; 3 Silicon Sensors: An Introduction; 3.1 Introduction; 3.2 Measurement and Control Systems; 3.3 Transducers; 3.3.1 Form of Signal-carrying Energy; 3.3.2 Signal Conversion in Transducers; 3.3.3 Smart Silicon Sensors; 3.3.4 Self-generating and Modulating Transducers
3.4 Transducer Technologies3.4.1 Introduction; 3.4.2 Generic Nonsilicon Technologies; 3.4.3 Silicon; 3.5 Examples of Silicon Sensors; 3.5.1 Radiation Domain; 3.5.2 Mechanical Domain; 3.5.3 Thermal Domain; 3.5.4 Magnetic Domain; 3.5.5 Chemical Domain; 3.6 Summary and Future Trends; 3.6.1 Summary; 3.6.2 Future Trends; References; 4 Optical Sensors Based on Photon Detection; 4.1 Introduction; 4.2 Photon Absorption in Silicon; 4.3 The Interface: Photon Transmission Into Silicon; 4.4 Photon Detection in Silicon Photoconductors; 4.4.1 Photoconductors in Silicon: Operation and Static Performance
4.4.2 Photoconductors in Silicon: Dynamic Performance4.5 Photon Detection in Silicon pn Junctions; 4.5.1 Defining the Depletion Layer at a pn Junction; 4.5.2 Electron-hole Collection in the Depletion Layer; 4.5.3 Electron-hole Collection in the Substrate; 4.5.4 Electron-hole Collection Close to the Surface; 4.5.5 Backside-illuminated Pin Photodiode; 4.5.6 Electron-hole Collection in Two Stacked pn Junctions; 4.6 Detection Limit; 4.6.1 Noise in the Optical Signal; 4.6.2 Photon Detector Noise; 4.6.3 Photon Detector Readout; 4.7 Photon Detectors with Gain; 4.7.1 The Phototransistor
4.7.2 The Avalanche Photodiode
Record Nr. UNINA-9910144402903321
Meijer Gerard  
Chichester, U.K., : J. Wiley & Sons, 2008
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Smart sensor systems [[electronic resource] /] / edited by Gerard C.M. Meijer
Smart sensor systems [[electronic resource] /] / edited by Gerard C.M. Meijer
Autore Meijer Gerard
Edizione [1st edition]
Pubbl/distr/stampa Chichester, U.K., : J. Wiley & Sons, 2008
Descrizione fisica 1 online resource (405 p.)
Disciplina 681
681.25
681/.25
Altri autori (Persone) MeijerG. C. M (Gerard C. M.)
Soggetto topico Detectors - Design and construction
Detectors - Industrial applications
Microcontrollers
ISBN 1-282-00220-1
9786612002205
0-470-86693-4
0-470-86692-6
Classificazione ZQ 3120
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto SMART SENSORSYSTEMS; Contents; Preface; About the Authors; 1 Smart Sensor Systems: Why? Where? How?; 1.1 Third Industrial Revolution; 1.2 Definitions for Several Kinds of Sensors; 1.2.1 Definition of Sensors; 1.2.2 Definition of Smart Sensors; 1.2.3 Definition of Integrated Smart Sensors; 1.2.4 Definition of Integrated Smart Sensor Systems; 1.3 Automated Production Machines; 1.4 Automated Consumer Products; 1.4.1 Smart Cars; 1.4.2 Smart Homes; 1.4.3 Smart Domestic Appliances; 1.4.4 Smart Toys; 1.5 Conclusion; References
2 Interface Electronics and Measurement Techniques for Smart Sensor Systems2.1 Introduction; 2.2 Object-oriented Design of Sensor Systems; 2.3 Sensing Elements and Their Parasitic Effects; 2.3.1 Compatibility of Packaging; 2.3.2 Effect of Cable and Wire Impedances; 2.3.3 Parasitic and Cross-effects in Sensing Elements; 2.3.4 Excitation Signals for Sensing Elements; 2.4 Analog-to-digital Conversion; 2.5 High Accuracy Over a Wide Dynamic Range; 2.5.1 Systematic, Random and Multi-path Errors; 2.5.2 Advanced Chopping Techniques; 2.5.3 Autocalibration; 2.5.4 Dynamic Amplification
2.5.5 Dynamic Division and Other Dynamic Signal-processing Techniques2.6 A Universal Transducer Interface; 2.6.1 Description of the Interface Chip and the Applied Measurement Techniques; 2.6.2 Realization and Experimental Results; 2.7 Summary and Future Trends; 2.7.1 Summary; 2.7.2 Future Trends; Problems; References; 3 Silicon Sensors: An Introduction; 3.1 Introduction; 3.2 Measurement and Control Systems; 3.3 Transducers; 3.3.1 Form of Signal-carrying Energy; 3.3.2 Signal Conversion in Transducers; 3.3.3 Smart Silicon Sensors; 3.3.4 Self-generating and Modulating Transducers
3.4 Transducer Technologies3.4.1 Introduction; 3.4.2 Generic Nonsilicon Technologies; 3.4.3 Silicon; 3.5 Examples of Silicon Sensors; 3.5.1 Radiation Domain; 3.5.2 Mechanical Domain; 3.5.3 Thermal Domain; 3.5.4 Magnetic Domain; 3.5.5 Chemical Domain; 3.6 Summary and Future Trends; 3.6.1 Summary; 3.6.2 Future Trends; References; 4 Optical Sensors Based on Photon Detection; 4.1 Introduction; 4.2 Photon Absorption in Silicon; 4.3 The Interface: Photon Transmission Into Silicon; 4.4 Photon Detection in Silicon Photoconductors; 4.4.1 Photoconductors in Silicon: Operation and Static Performance
4.4.2 Photoconductors in Silicon: Dynamic Performance4.5 Photon Detection in Silicon pn Junctions; 4.5.1 Defining the Depletion Layer at a pn Junction; 4.5.2 Electron-hole Collection in the Depletion Layer; 4.5.3 Electron-hole Collection in the Substrate; 4.5.4 Electron-hole Collection Close to the Surface; 4.5.5 Backside-illuminated Pin Photodiode; 4.5.6 Electron-hole Collection in Two Stacked pn Junctions; 4.6 Detection Limit; 4.6.1 Noise in the Optical Signal; 4.6.2 Photon Detector Noise; 4.6.3 Photon Detector Readout; 4.7 Photon Detectors with Gain; 4.7.1 The Phototransistor
4.7.2 The Avalanche Photodiode
Record Nr. UNINA-9910830507803321
Meijer Gerard  
Chichester, U.K., : J. Wiley & Sons, 2008
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Smart sensor systems / / edited by Gerard C.M. Meijer
Smart sensor systems / / edited by Gerard C.M. Meijer
Edizione [1st edition]
Pubbl/distr/stampa Chichester, U.K., : J. Wiley & Sons, 2008
Descrizione fisica 1 online resource (405 p.)
Disciplina 681
681.25
681/.25
Altri autori (Persone) MeijerG. C. M (Gerard C. M.)
Soggetto topico Detectors - Design and construction
Detectors - Industrial applications
Microcontrollers
ISBN 9786612002205
9781282002203
1282002201
9780470866931
0470866934
9780470866924
0470866926
Classificazione ZQ 3120
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto SMART SENSORSYSTEMS; Contents; Preface; About the Authors; 1 Smart Sensor Systems: Why? Where? How?; 1.1 Third Industrial Revolution; 1.2 Definitions for Several Kinds of Sensors; 1.2.1 Definition of Sensors; 1.2.2 Definition of Smart Sensors; 1.2.3 Definition of Integrated Smart Sensors; 1.2.4 Definition of Integrated Smart Sensor Systems; 1.3 Automated Production Machines; 1.4 Automated Consumer Products; 1.4.1 Smart Cars; 1.4.2 Smart Homes; 1.4.3 Smart Domestic Appliances; 1.4.4 Smart Toys; 1.5 Conclusion; References
2 Interface Electronics and Measurement Techniques for Smart Sensor Systems2.1 Introduction; 2.2 Object-oriented Design of Sensor Systems; 2.3 Sensing Elements and Their Parasitic Effects; 2.3.1 Compatibility of Packaging; 2.3.2 Effect of Cable and Wire Impedances; 2.3.3 Parasitic and Cross-effects in Sensing Elements; 2.3.4 Excitation Signals for Sensing Elements; 2.4 Analog-to-digital Conversion; 2.5 High Accuracy Over a Wide Dynamic Range; 2.5.1 Systematic, Random and Multi-path Errors; 2.5.2 Advanced Chopping Techniques; 2.5.3 Autocalibration; 2.5.4 Dynamic Amplification
2.5.5 Dynamic Division and Other Dynamic Signal-processing Techniques2.6 A Universal Transducer Interface; 2.6.1 Description of the Interface Chip and the Applied Measurement Techniques; 2.6.2 Realization and Experimental Results; 2.7 Summary and Future Trends; 2.7.1 Summary; 2.7.2 Future Trends; Problems; References; 3 Silicon Sensors: An Introduction; 3.1 Introduction; 3.2 Measurement and Control Systems; 3.3 Transducers; 3.3.1 Form of Signal-carrying Energy; 3.3.2 Signal Conversion in Transducers; 3.3.3 Smart Silicon Sensors; 3.3.4 Self-generating and Modulating Transducers
3.4 Transducer Technologies3.4.1 Introduction; 3.4.2 Generic Nonsilicon Technologies; 3.4.3 Silicon; 3.5 Examples of Silicon Sensors; 3.5.1 Radiation Domain; 3.5.2 Mechanical Domain; 3.5.3 Thermal Domain; 3.5.4 Magnetic Domain; 3.5.5 Chemical Domain; 3.6 Summary and Future Trends; 3.6.1 Summary; 3.6.2 Future Trends; References; 4 Optical Sensors Based on Photon Detection; 4.1 Introduction; 4.2 Photon Absorption in Silicon; 4.3 The Interface: Photon Transmission Into Silicon; 4.4 Photon Detection in Silicon Photoconductors; 4.4.1 Photoconductors in Silicon: Operation and Static Performance
4.4.2 Photoconductors in Silicon: Dynamic Performance4.5 Photon Detection in Silicon pn Junctions; 4.5.1 Defining the Depletion Layer at a pn Junction; 4.5.2 Electron-hole Collection in the Depletion Layer; 4.5.3 Electron-hole Collection in the Substrate; 4.5.4 Electron-hole Collection Close to the Surface; 4.5.5 Backside-illuminated Pin Photodiode; 4.5.6 Electron-hole Collection in Two Stacked pn Junctions; 4.6 Detection Limit; 4.6.1 Noise in the Optical Signal; 4.6.2 Photon Detector Noise; 4.6.3 Photon Detector Readout; 4.7 Photon Detectors with Gain; 4.7.1 The Phototransistor
4.7.2 The Avalanche Photodiode
Record Nr. UNINA-9911019946003321
Chichester, U.K., : J. Wiley & Sons, 2008
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui