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Reliability wearout mechanisms in advanced CMOS technologies / / Alvin W. Strong ... [et al.]
| Reliability wearout mechanisms in advanced CMOS technologies / / Alvin W. Strong ... [et al.] |
| Pubbl/distr/stampa | Piscataway, New Jersey : , : IEEE Press, , c2009 |
| Descrizione fisica | 1 online resource (642 p.) |
| Disciplina | 621.39732 |
| Altri autori (Persone) | StrongAlvin Wayne <1946-> |
| Collana | IEEE Press series on microelectronic systems |
| Soggetto topico |
Metal oxide semiconductors, Complementary - Reliability
Microelectronics |
| ISBN |
1-282-33149-3
9786612331497 0-470-45526-8 0-470-45525-X |
| Classificazione |
ELT 358f
ZN 4960 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Introduction / Alvin W. Strong -- Dielectric characterization and reliability methodology / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Suñé -- Dielectric breakdown of gate oxides: physics and experiments / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Suñé -- Negative bias temperature instabilities in pMOSFET devices / Giuseppe LaRosa -- Hot carriers / Stewart E. Rauch, III -- Stress-induced voiding / Timothy D. Sullivan -- Electromigration / Timothy D. Sullivan. |
| Record Nr. | UNINA-9910139868803321 |
| Piscataway, New Jersey : , : IEEE Press, , c2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Reliability wearout mechanisms in advanced CMOS technologies / / Alvin W. Strong ... [et al.]
| Reliability wearout mechanisms in advanced CMOS technologies / / Alvin W. Strong ... [et al.] |
| Pubbl/distr/stampa | Piscataway, New Jersey : , : IEEE Press, , c2009 |
| Descrizione fisica | 1 online resource (642 p.) |
| Disciplina | 621.39732 |
| Altri autori (Persone) | StrongAlvin Wayne <1946-> |
| Collana | IEEE Press series on microelectronic systems |
| Soggetto topico |
Metal oxide semiconductors, Complementary - Reliability
Microelectronics |
| ISBN |
1-282-33149-3
9786612331497 0-470-45526-8 0-470-45525-X |
| Classificazione |
ELT 358f
ZN 4960 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Introduction / Alvin W. Strong -- Dielectric characterization and reliability methodology / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Suñé -- Dielectric breakdown of gate oxides: physics and experiments / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Suñé -- Negative bias temperature instabilities in pMOSFET devices / Giuseppe LaRosa -- Hot carriers / Stewart E. Rauch, III -- Stress-induced voiding / Timothy D. Sullivan -- Electromigration / Timothy D. Sullivan. |
| Record Nr. | UNISA-996204768303316 |
| Piscataway, New Jersey : , : IEEE Press, , c2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
Reliability wearout mechanisms in advanced CMOS technologies / / Alvin W. Strong ... [et al.]
| Reliability wearout mechanisms in advanced CMOS technologies / / Alvin W. Strong ... [et al.] |
| Pubbl/distr/stampa | Piscataway, New Jersey : , : IEEE Press, , c2009 |
| Descrizione fisica | 1 online resource (642 p.) |
| Disciplina | 621.39732 |
| Altri autori (Persone) | StrongAlvin Wayne <1946-> |
| Collana | IEEE Press series on microelectronic systems |
| Soggetto topico |
Metal oxide semiconductors, Complementary - Reliability
Microelectronics |
| ISBN |
1-282-33149-3
9786612331497 0-470-45526-8 0-470-45525-X |
| Classificazione |
ELT 358f
ZN 4960 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Introduction / Alvin W. Strong -- Dielectric characterization and reliability methodology / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Suñé -- Dielectric breakdown of gate oxides: physics and experiments / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Suñé -- Negative bias temperature instabilities in pMOSFET devices / Giuseppe LaRosa -- Hot carriers / Stewart E. Rauch, III -- Stress-induced voiding / Timothy D. Sullivan -- Electromigration / Timothy D. Sullivan. |
| Record Nr. | UNINA-9910830485603321 |
| Piscataway, New Jersey : , : IEEE Press, , c2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Reliability wearout mechanisms in advanced CMOS technologies / / Alvin W. Strong ... [et al.]
| Reliability wearout mechanisms in advanced CMOS technologies / / Alvin W. Strong ... [et al.] |
| Pubbl/distr/stampa | Hoboken, N.J., : Wiley, c2009 |
| Descrizione fisica | 1 online resource (642 p.) |
| Disciplina | 621.39732 |
| Altri autori (Persone) | StrongAlvin Wayne <1946-> |
| Collana | IEEE Press series on microelectronic systems |
| Soggetto topico |
Metal oxide semiconductors, Complementary - Reliability
Microelectronics |
| ISBN |
9786612331497
9781282331495 1282331493 9780470455265 0470455268 9780470455258 047045525X |
| Classificazione |
ELT 358f
ZN 4960 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Introduction / Alvin W. Strong -- Dielectric characterization and reliability methodology / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Suñé -- Dielectric breakdown of gate oxides: physics and experiments / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Suñé -- Negative bias temperature instabilities in pMOSFET devices / Giuseppe LaRosa -- Hot carriers / Stewart E. Rauch, III -- Stress-induced voiding / Timothy D. Sullivan -- Electromigration / Timothy D. Sullivan. |
| Record Nr. | UNINA-9911019652603321 |
| Hoboken, N.J., : Wiley, c2009 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||