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Handbook of self assembled semiconductor nanostructures for novel devices in photonics and electronics / / edited by Mohamed Henini
| Handbook of self assembled semiconductor nanostructures for novel devices in photonics and electronics / / edited by Mohamed Henini |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Oxford, : Elsevier, 2008 |
| Descrizione fisica | 1 online resource (862 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) | HeniniMohamed |
| Soggetto topico |
Nanostructured materials
Nanotechnology |
| ISBN |
9786611795290
9781281795298 1281795291 9780080560472 0080560474 |
| Classificazione | UP 3150 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front Cover; Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics; Copyright Page; Contents; Preface; Chapter 1 Self-organized Quantum Dot Multilayer Structures; 1.1 Introduction; 1.2 Mechanisms for interlayer correlation formation; 1.3 Strain-field interactions in multilayer structures; 1.3.1 The isotropic point-source model; 1.3.2 The effect of elastic anisotropy; 1.3.3 Near-field strain interactions; 1.3.4 Stacking conditions and replication angles; 1.4 Comparison with experimental results; 1.4.1 Vertically aligned dots
1.4.2 Fcc-like dot stacking1.4.3 Anticorrelated and staggered dot stackings; 1.4.4 Oblique replication on high-indexed surfaces; 1.5 Monte Carlo growth simulations; 1.6 InGaAs/GaAs multilayers; 1.6.1 Pairing probability as a function of spacer thickness; 1.6.2 Lateral ordering; 1.6.3 Sizes, shapes and critical wetting layer thickness; 1.6.4 Photoluminescence; 1.7 Ordering in SiGe/Si dot superlattices; 1.8 PbSe/PbEuTe dot superlattices; 1.8.1 Stackings as a function of spacer thickness; 1.8.2 Lateral ordering; 1.8.3 Interlayer correlations as a function of dot size 1.8.4 Phase diagram for vertical and lateral dot ordering1.9 Other mechanisms for interlayer correlation formation; 1.9.1 Morphologic correlations; 1.9.2 Correlations induced by composition; 1.10 Summary and outlook; Acknowledgements; Chapter 2 InAs Quantum Dots on Al[sub(x)]Ga[sub(1-x)]As Surfaces and in an Al[sub(x)]Ga[sub(1-x)]As Matrix; 2.1 Introduction; 2.2 Quantum dot formation; 2.2.1 Strained heteroepitaxial growth; 2.2.2 Quantum dot nucleation on Al[sub(x)]Ga[sub(1-x)]As surfaces; 2.2.3 Calibrating InAs growth rate; 2.3 Control of quantum dot size and density 2.3.1 QD nucleation and growth2.4 Changing the confining matrix; 2.5 Overgrowth of quantum dots; 2.5.1 QD characterization; 2.5.2 Inhomogeneous broadening of QD size; 2.6 Applications; 2.6.1 Quantum dot detectors; 2.6.2 Quantum dot quantum-cascade emitters; Chapter 3 Optical Properties of In(Ga)As/GaAs Quantum Dots for Optoelectronic Devices; 3.1 Introduction; 3.2 Growth of In(Ga)As/GaAs QDs; 3.3 Stacked QD layers; 3.4 Energy states in QDs; 3.5 Single QD spectroscopy; 3.6 Quantum dot lasers; 3.7 Vertical and resonant cavity structures; 3.8 Semiconductor optical amplifiers 3.9 Single photon sources3.10 Entangled photon sources; 3.11 Spin-LEDs and the potential for QDs in spintronic devices; 3.12 Conclusions; Acknowledgements; Chapter 4 Cavity Quantum Electrodynamics with Semiconductor Quantum Dots; 4.1 Introduction; 4.2 Basics of cavity quantum electrodynamics; 4.2.1 Optical confinement and light-matter interaction; 4.2.2 Spontaneous emission control - Purcell effect; 4.2.3 Strong coupling regime; 4.3 Implementation of cavity quantum electrodynamics in the solid state; 4.3.1 The resonator: a semiconductor microcavity 4.3.2 The emitter: a single semiconductor quantum dot |
| Record Nr. | UNINA-9911006887903321 |
| Oxford, : Elsevier, 2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Quantum dot molecules / / Jiang Wu, Zhiming M. Wang, editors
| Quantum dot molecules / / Jiang Wu, Zhiming M. Wang, editors |
| Edizione | [1st ed. 2014.] |
| Pubbl/distr/stampa | New York : , : Springer, , 2014 |
| Descrizione fisica | 1 online resource (xi, 377 pages) : illustrations (some color) |
| Disciplina | 383 |
| Collana | Lecture Notes in Nanoscale Science and Technology |
| Soggetto topico |
Quantum dots
Nanostructured materials |
| ISBN | 1-4614-8130-9 |
| Classificazione |
UP 3150
VE 9850 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Preface -- Chapter 1: Fabrication of semiconductor Quantum Dot Molecules: droplet epitaxy and local oxidation nanolithography techniques -- Chapter 2: InP Ring-Shaped Quantum Dot Molecules by Droplet Epitaxy -- Chapter 3: Optical properties of lateral InGaAs quantum dot molecules single- and bi-layers -- Chapter 4: Formation Principles and Exciton Relaxation in Semiconductor Quantum Dot - Dye Nanoassemblies -- Chapter 5: Polarization properties of multi-layer InAs quantum dot molecules as a function of their size -- Chapter 6: Analysis of reduced built-in polarization fields and electronic structure of InGaN/GaN quantum dot molecules -- Chapter 7: Interference single electron transistors based on quantum dot molecules -- Chapter 8: Quantum Interference Effects on the Electronic Transmission Through Quantum Dot Molecules -- Chapter 9: Phonon-assisted processes and spontaneous emission in double quantum dots -- Chapter 10: Förster resonant energy transfer signatures in optically driven quantum dot molecules -- Chapter 11: Stark effect and the measurement of electric fields with quantum dot molecules -- Index. |
| Record Nr. | UNINA-9910298646603321 |
| New York : , : Springer, , 2014 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||