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Fundamentals of optical fiber sensors [[electronic resource] /] / Zujie Fang ... [et al.]
| Fundamentals of optical fiber sensors [[electronic resource] /] / Zujie Fang ... [et al.] |
| Autore | Fang Zujie <1942-> |
| Pubbl/distr/stampa | Hoboken, N. J., : Wiley, c2012 |
| Descrizione fisica | 1 online resource (496 p.) |
| Disciplina |
621.385
681.25 681/.25 |
| Altri autori (Persone) | FangZujie <1942-> |
| Collana | Wiley series in microwave and optical engineering |
| Soggetto topico |
Optical fiber detectors
Fiber optics |
| ISBN |
1-283-54284-6
9786613855299 1-118-38171-8 1-118-38173-4 1-118-38175-0 |
| Classificazione | TEC008090 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
FUNDAMENTALS OF OPTICAL FIBER SENSORS; CONTENTS; PREFACE; 1 INTRODUCTION; 1.1 Historical Review and Perspective; 1.2 Classifications of Optical Fiber Sensors; 1.3 Overview of the Chapters; References; 2 FUNDAMENTALS OF OPTICAL FIBERS; 2.1 Introduction to Optical Fibers; 2.1.1 Basic Structure and Fabrication of Optical Fiber; 2.1.2 Basic Characteristics; 2.1.3 Classifications of Optical Fibers; 2.2 Electromagnetic Theory of Step-Index Optical Fibers; 2.2.1 Maxwell Equations in Cylindrical Coordinates; 2.2.2 Boundary Conditions and Eigenvalue Equations
2.2.3 Weakly Guiding Approximation, Hybrid Modes, and Linear Polarized Modes2.2.4 Field Distribution and Polarization Characteristics; 2.2.5 Multimode Fiber and Cladding Modes; 2.2.6 Propagation of Optical Pulses in Optical Fibers; 2.3 Basic Theory of the Gradient-Index Optical Fiber; 2.3.1 Ray Equation in Inhomogeneous Media; 2.3.2 Ray Optics of GRIN Fiber; 2.3.3 Wave Optics of GRIN Fiber; 2.3.4 Basic Characteristics of Gradient Index Lens; 2.4 Special Optical Fibers; 2.4.1 Rare-Earth-Doped Fibers and Double-Cladding Fibers; 2.4.2 Polarization Maintaining Fibers 3.5.1 Fiber Polarizers3.5.2 Fiber Polarization Controller; 3.5.3 Fiber Depolarizer and Polarization Scrambler; 3.5.4 Fiber Optical Isolator and Circulator; Problems; References; 4 FIBER GRATINGS AND RELATED DEVICES; 4.1 Introduction to Fiber Gratings; 4.1.1 Basic Structure and Principle; 4.1.2 Photosensitivity of Optical Fibers; 4.1.3 Fabrication and Classifications of Fiber Gratings; 4.2 Theory of Fiber Grating; 4.2.1 Theory of Uniform FBG; 4.2.2 Theory of Long-Period Fiber Grating; 4.2.3 Basic Theory of Nonuniform Fiber Gratings; 4.2.4 Inverse Engineering Design 4.2.5 Apodization of Fiber Grating |
| Record Nr. | UNINA-9910139093003321 |
Fang Zujie <1942->
|
||
| Hoboken, N. J., : Wiley, c2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Fundamentals of optical fiber sensors / / Zujie Fang ... [et al.]
| Fundamentals of optical fiber sensors / / Zujie Fang ... [et al.] |
| Autore | Fang Zujie <1942-> |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Hoboken, N. J., : Wiley, c2012 |
| Descrizione fisica | 1 online resource (496 p.) |
| Disciplina |
621.385
681.25 681/.25 |
| Altri autori (Persone) | FangZujie <1942-> |
| Collana | Wiley series in microwave and optical engineering |
| Soggetto topico |
Optical fiber detectors
Fiber optics |
| ISBN |
9786613855299
9781283542845 1283542846 9781118381717 1118381718 9781118381731 1118381734 9781118381755 1118381750 |
| Classificazione | TEC008090 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
FUNDAMENTALS OF OPTICAL FIBER SENSORS; CONTENTS; PREFACE; 1 INTRODUCTION; 1.1 Historical Review and Perspective; 1.2 Classifications of Optical Fiber Sensors; 1.3 Overview of the Chapters; References; 2 FUNDAMENTALS OF OPTICAL FIBERS; 2.1 Introduction to Optical Fibers; 2.1.1 Basic Structure and Fabrication of Optical Fiber; 2.1.2 Basic Characteristics; 2.1.3 Classifications of Optical Fibers; 2.2 Electromagnetic Theory of Step-Index Optical Fibers; 2.2.1 Maxwell Equations in Cylindrical Coordinates; 2.2.2 Boundary Conditions and Eigenvalue Equations
2.2.3 Weakly Guiding Approximation, Hybrid Modes, and Linear Polarized Modes2.2.4 Field Distribution and Polarization Characteristics; 2.2.5 Multimode Fiber and Cladding Modes; 2.2.6 Propagation of Optical Pulses in Optical Fibers; 2.3 Basic Theory of the Gradient-Index Optical Fiber; 2.3.1 Ray Equation in Inhomogeneous Media; 2.3.2 Ray Optics of GRIN Fiber; 2.3.3 Wave Optics of GRIN Fiber; 2.3.4 Basic Characteristics of Gradient Index Lens; 2.4 Special Optical Fibers; 2.4.1 Rare-Earth-Doped Fibers and Double-Cladding Fibers; 2.4.2 Polarization Maintaining Fibers 3.5.1 Fiber Polarizers3.5.2 Fiber Polarization Controller; 3.5.3 Fiber Depolarizer and Polarization Scrambler; 3.5.4 Fiber Optical Isolator and Circulator; Problems; References; 4 FIBER GRATINGS AND RELATED DEVICES; 4.1 Introduction to Fiber Gratings; 4.1.1 Basic Structure and Principle; 4.1.2 Photosensitivity of Optical Fibers; 4.1.3 Fabrication and Classifications of Fiber Gratings; 4.2 Theory of Fiber Grating; 4.2.1 Theory of Uniform FBG; 4.2.2 Theory of Long-Period Fiber Grating; 4.2.3 Basic Theory of Nonuniform Fiber Gratings; 4.2.4 Inverse Engineering Design 4.2.5 Apodization of Fiber Grating |
| Record Nr. | UNINA-9910829162403321 |
|
Fang Zujie <1942->
|
||
| Hoboken, N. J., : Wiley, c2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Gas insulated substations [[e-book] /] / edited by Hermann Koch
| Gas insulated substations [[e-book] /] / edited by Hermann Koch |
| Pubbl/distr/stampa | Chichester, West Sussex, United Kingdom : , : Wiley, , 2014 |
| Descrizione fisica | 1 online resource (1108 p.) |
| Disciplina | 621.31/042 |
| Collana | Wiley - IEEE |
| Soggetto topico |
Electric cables - Gas insulation
Electric substations |
| ISBN |
1-118-69453-8
1-118-69451-1 1-118-69452-X |
| Classificazione | TEC008090 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
1 Introduction -- 1.1 General / Hermann Koch -- 1.2 Definitions / Hermann Koch -- 1.3 Standards and References / John Brunke -- 1.4 Ratings / Hermann Koch -- 2 Basic Information -- 2.1 History / Hermann Koch -- 2.2 Physics of Gas-insulated Switchgear / John Brunke -- 2.3 Reliability and Availability / Hermann Koch -- 2.4 Design / Phil Bolin -- 2.5 Safety / Hermann Koch -- 2.6 Grounding and Bonding / John Boggess -- 2.7 Factors for choosing GIS / John Boggess -- 2.8 Sulfur Hexafluoride (SF6) / Hermann Koch -- 3 Technology -- 3.1 General / Hermann Koch -- 3.2 Modular Components, Design and Development Process / Hermann Koch -- 3.3 Manufacturing / Hermann Koch -- 3.4 Specification Development / George Becker -- 3.5 Instrument Transformers / Hermann Koch -- 3.6 Interfaces -- 3.6.1 Direct Connection between Power Transformers and GIS / Xi Zhu -- 3.6.2 Cable Connections for Gas Insulated Switchgear for rated voltage above 52kV / Xi Zhu -- 3.6.3 Bushings / Sharma Devki -- 3.7 Gas Insulated Surge Arrestors D / Dave Lin -- 3.8 Gas Insulated Bus / Hermann Koch -- 4 Control and Monitoring -- 4.1 General / Hermann Koch -- 4.2 Monitoring / Nobby Fujimoto -- 4.3 Local Control Cabinet / Pravakar Samanta -- 4.4 Digital Communication / Hermann Koch -- 5 Type and Routine Testing -- 5.1 General / Peter Grossmann -- 5.2 Type Tests / Peter Grossmann -- 5.3 Routine Tests / Peter Grossmann -- 5.4 On-site Field Testing / Charles Hand -- 6 Installation -- 6.1 General / Hermann Koch -- 6.2 Installation / Richard Jones -- 6.3 Energization: Connecting to the Power Grid / James Massura -- 7 Operation & Maintenance -- 7.1 General / Hermann Koch -- 7.2 Operation of a Gas Insulated Substation / Charles Hand -- 7.3 Maintenance / Arnaud Ficheux -- 7.4 Repair / Arnaud Ficheux -- 7.5 Extensions / Arnaud Ficheux -- 7.6 GIS Retrofit or upgrade / Ravi Dhara -- 7.7 Overloading and thermal limits / Arnaud Ficheux -- 8 Applications -- 8.1 General / Hermann Koch -- 8.2 Typical GIS Layouts / Peter Grossmann.
8.3 Reference Projects / Arun Arora -- 8.3.1 500 kV Indoor GIS and 115 kV AIS -- 8.3.2 115 kV GIS Switching Station Substation -- 8.3.3 345 kV and 4000 A Indoor Expendable Ring Bus GIS -- 8.3.4 69 kV and 3150 A Indoor Double Bus GIS -- 8.3.5 115 kV and 1200 A Container Ring Bus GIS -- 8.3.6 115 kV and 2000 A Outdoor Single Bus GIS -- 8.3.7 345 kV and 4000 A Indoor Breaker and Half GIS -- 8.3.8 115 kV and 3150 A Indoor Ring Bus GIS -- 8.3.9 69 kV and 2000 A Indoor Ring Bus GIS -- 8.3.10 138 kV and 230 kV Outdoor Ring Bus GIS -- 8.3.11 500 kV and 4000 A/8000 A Indoor Breaker and Third GIS -- 8.3.12 69 kV and 1600 A Outdoor Single Bus GIS -- 8.3.13 69 kV and 2000 A Underground GIS Hermann Koch -- 8.4 GIS Case Study Public Service Electric and Gas Company - New Jersey 230 kV, 80 kA Bergen Switching Station Peter Grossmann -- 8.5 Mobile GIS / Hermann Koch -- 8.6 Mixed Technology Switchgear (MTS) / Dave Solhtalab -- 8.7 Future Developments / Hermann Koch -- 9 Other Topics -- 9.1 General / Hermann Koch -- 9.2.1 Environmental Life Cycle Assessment / Venkatesh Minisandram -- 9.2.2 GIS Environmental Impact / Arnaud Ficheux -- 9.2.3 Environmental Impact / Hermann Koch -- 9.3 Life Cycle Cost Analysis / George Becker -- 9.4 Insulation Coordination Study / Hermann Koch -- 9.5 Very Fast Transients / Nobby Fujimoto -- 9.6 Project Scope Development / Jorge Marquez -- 9.7 Risk-Based Asset Management of Gas-Insulated Substations and Equipment / George Becker -- 9.8 Health and Safety Impact / Hermann Koch -- 9.9 Electro Magnetic Field / Hermann Koch -- 10 Conclusions / Hermann Koch. |
| Record Nr. | UNINA-9910786650603321 |
| Chichester, West Sussex, United Kingdom : , : Wiley, , 2014 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Gas insulated substations [[e-book] /] / edited by Hermann Koch
| Gas insulated substations [[e-book] /] / edited by Hermann Koch |
| Pubbl/distr/stampa | Chichester, West Sussex, United Kingdom : , : Wiley, , 2014 |
| Descrizione fisica | 1 online resource (1108 p.) |
| Disciplina | 621.31/042 |
| Collana | Wiley - IEEE |
| Soggetto topico |
Electric cables - Gas insulation
Electric substations |
| ISBN |
1-118-69453-8
1-118-69451-1 1-118-69452-X |
| Classificazione | TEC008090 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
1 Introduction -- 1.1 General / Hermann Koch -- 1.2 Definitions / Hermann Koch -- 1.3 Standards and References / John Brunke -- 1.4 Ratings / Hermann Koch -- 2 Basic Information -- 2.1 History / Hermann Koch -- 2.2 Physics of Gas-insulated Switchgear / John Brunke -- 2.3 Reliability and Availability / Hermann Koch -- 2.4 Design / Phil Bolin -- 2.5 Safety / Hermann Koch -- 2.6 Grounding and Bonding / John Boggess -- 2.7 Factors for choosing GIS / John Boggess -- 2.8 Sulfur Hexafluoride (SF6) / Hermann Koch -- 3 Technology -- 3.1 General / Hermann Koch -- 3.2 Modular Components, Design and Development Process / Hermann Koch -- 3.3 Manufacturing / Hermann Koch -- 3.4 Specification Development / George Becker -- 3.5 Instrument Transformers / Hermann Koch -- 3.6 Interfaces -- 3.6.1 Direct Connection between Power Transformers and GIS / Xi Zhu -- 3.6.2 Cable Connections for Gas Insulated Switchgear for rated voltage above 52kV / Xi Zhu -- 3.6.3 Bushings / Sharma Devki -- 3.7 Gas Insulated Surge Arrestors D / Dave Lin -- 3.8 Gas Insulated Bus / Hermann Koch -- 4 Control and Monitoring -- 4.1 General / Hermann Koch -- 4.2 Monitoring / Nobby Fujimoto -- 4.3 Local Control Cabinet / Pravakar Samanta -- 4.4 Digital Communication / Hermann Koch -- 5 Type and Routine Testing -- 5.1 General / Peter Grossmann -- 5.2 Type Tests / Peter Grossmann -- 5.3 Routine Tests / Peter Grossmann -- 5.4 On-site Field Testing / Charles Hand -- 6 Installation -- 6.1 General / Hermann Koch -- 6.2 Installation / Richard Jones -- 6.3 Energization: Connecting to the Power Grid / James Massura -- 7 Operation & Maintenance -- 7.1 General / Hermann Koch -- 7.2 Operation of a Gas Insulated Substation / Charles Hand -- 7.3 Maintenance / Arnaud Ficheux -- 7.4 Repair / Arnaud Ficheux -- 7.5 Extensions / Arnaud Ficheux -- 7.6 GIS Retrofit or upgrade / Ravi Dhara -- 7.7 Overloading and thermal limits / Arnaud Ficheux -- 8 Applications -- 8.1 General / Hermann Koch -- 8.2 Typical GIS Layouts / Peter Grossmann.
8.3 Reference Projects / Arun Arora -- 8.3.1 500 kV Indoor GIS and 115 kV AIS -- 8.3.2 115 kV GIS Switching Station Substation -- 8.3.3 345 kV and 4000 A Indoor Expendable Ring Bus GIS -- 8.3.4 69 kV and 3150 A Indoor Double Bus GIS -- 8.3.5 115 kV and 1200 A Container Ring Bus GIS -- 8.3.6 115 kV and 2000 A Outdoor Single Bus GIS -- 8.3.7 345 kV and 4000 A Indoor Breaker and Half GIS -- 8.3.8 115 kV and 3150 A Indoor Ring Bus GIS -- 8.3.9 69 kV and 2000 A Indoor Ring Bus GIS -- 8.3.10 138 kV and 230 kV Outdoor Ring Bus GIS -- 8.3.11 500 kV and 4000 A/8000 A Indoor Breaker and Third GIS -- 8.3.12 69 kV and 1600 A Outdoor Single Bus GIS -- 8.3.13 69 kV and 2000 A Underground GIS Hermann Koch -- 8.4 GIS Case Study Public Service Electric and Gas Company - New Jersey 230 kV, 80 kA Bergen Switching Station Peter Grossmann -- 8.5 Mobile GIS / Hermann Koch -- 8.6 Mixed Technology Switchgear (MTS) / Dave Solhtalab -- 8.7 Future Developments / Hermann Koch -- 9 Other Topics -- 9.1 General / Hermann Koch -- 9.2.1 Environmental Life Cycle Assessment / Venkatesh Minisandram -- 9.2.2 GIS Environmental Impact / Arnaud Ficheux -- 9.2.3 Environmental Impact / Hermann Koch -- 9.3 Life Cycle Cost Analysis / George Becker -- 9.4 Insulation Coordination Study / Hermann Koch -- 9.5 Very Fast Transients / Nobby Fujimoto -- 9.6 Project Scope Development / Jorge Marquez -- 9.7 Risk-Based Asset Management of Gas-Insulated Substations and Equipment / George Becker -- 9.8 Health and Safety Impact / Hermann Koch -- 9.9 Electro Magnetic Field / Hermann Koch -- 10 Conclusions / Hermann Koch. |
| Record Nr. | UNINA-9910809240103321 |
| Chichester, West Sussex, United Kingdom : , : Wiley, , 2014 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Introduction to nanomaterials and devices [[electronic resource] /] / Omar Manasreh
| Introduction to nanomaterials and devices [[electronic resource] /] / Omar Manasreh |
| Autore | Manasreh Mahmoud Omar |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Hoboken, N.J., : Wiley, 2012 |
| Descrizione fisica | 1 online resource (488 p.) |
| Disciplina |
620.1/15
620.115 |
| Soggetto topico |
Nanostructured materials
Optoelectronic devices Semiconductor nanocrystals Quantum electronics |
| ISBN |
1-283-33234-5
9786613332349 1-118-14841-X 1-118-14840-1 1-118-14837-1 |
| Classificazione | TEC008090 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
INTRODUCTION TO NANOMATERIALS AND DEVICES; CONTENTS; Preface; Fundamental Constants; 1 Growth of Bulk, Thin Films, and Nanomaterials; 1.1 Introduction; 1.2 Growth of Bulk Semiconductors; 1.2.1 Liquid-Encapsulated Czochralski (LEC) Method; 1.2.2 Horizontal Bridgman Method; 1.2.3 Float-Zone Growth Method; 1.2.4 Lely Growth Method; 1.3 Growth of Semiconductor Thin Films; 1.3.1 Liquid-Phase Epitaxy Method; 1.3.2 Vapor-Phase Epitaxy Method; 1.3.3 Hydride Vapor-Phase Epitaxial Growth of Thick GaN Layers; 1.3.4 Pulsed Laser Deposition Technique; 1.3.5 Molecular Beam Epitaxy Growth Technique
1.4 Fabrication and Growth of Semiconductor Nanomaterials1.4.1 Nucleation; 1.4.2 Fabrications of Quantum Dots; 1.4.3 Epitaxial Growth of Self-Assembly Quantum Dots; 1.5 Colloidal Growth of Nanocrystals; 1.6 Summary; Problems; Bibliography; 2 Application of Quantum Mechanics to Nanomaterial Structures; 2.1 Introduction; 2.2 The de Broglie Relation; 2.3 Wave Functions and Schrödinger Equation; 2.4 Dirac Notation; 2.4.1 Action of a Linear Operator on a Bra; 2.4.2 Eigenvalues and Eigenfunctions of an Operator; 2.4.3 The Dirac d-Function 2.4.4 Fourier Series and Fourier Transform in Quantum Mechanics2.5 Variational Method; 2.6 Stationary States of a Particle in a Potential Step; 2.7 Potential Barrier with a Finite Height; 2.8 Potential Well with an Infinite Depth; 2.9 Finite Depth Potential Well; 2.10 Unbound Motion of a Particle (E > V0) in a Potential Well With a Finite Depth; 2.11 Triangular Potential Well; 2.12 Delta Function Potentials; 2.13 Transmission in Finite Double Barrier Potential Wells; 2.14 Envelope Function Approximation; 2.15 Periodic Potential; 2.15.1 Bloch's Theorem; 2.15.2 The Kronig-Penney Model 2.15.3 One-Electron Approximation in a Periodic Dirac d-Function2.15.4 Superlattices; 2.16 Effective Mass; 2.17 Summary; Problems; Bibliography; 3 Density of States in Semiconductor Materials; 3.1 Introduction; 3.2 Distribution Functions; 3.3 Maxwell-Boltzmann Statistic; 3.4 Fermi-Dirac Statistics; 3.5 Bose-Einstein Statistics; 3.6 Density of States; 3.7 Density of States of Quantum Wells, Wires, and Dots; 3.7.1 Quantum Wells; 3.7.2 Quantum Wires; 3.7.3 Quantum Dots; 3.8 Density of States of Other Systems; 3.8.1 Superlattices 3.8.2 Density of States of Bulk Electrons in the Presence of a Magnetic Field3.8.3 Density of States in the Presence of an Electric Field; 3.9 Summary; Problems; Bibliography; 4 Optical Properties; 4.1 Fundamentals; 4.2 Lorentz and Drude Models; 4.3 The Optical Absorption Coefficient of the Interband Transition in Direct Band Gap Semiconductors; 4.4 The Optical Absorption Coefficient of the Interband Transition in Indirect Band Gap Semiconductors; 4.5 The Optical Absorption Coefficient of the Interband Transition in Quantum Wells 4.6 The Optical Absorption Coefficient of the Interband Transition in Type II Superlattices |
| Record Nr. | UNINA-9910139565903321 |
|
Manasreh Mahmoud Omar
|
||
| Hoboken, N.J., : Wiley, 2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Introduction to nanomaterials and devices / / Omar Manasreh
| Introduction to nanomaterials and devices / / Omar Manasreh |
| Autore | Manasreh Mahmoud Omar |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Hoboken, N.J., : Wiley, 2012 |
| Descrizione fisica | 1 online resource (488 p.) |
| Disciplina | 620.1/15 |
| Soggetto topico |
Nanostructured materials
Optoelectronic devices Semiconductor nanocrystals Quantum electronics |
| ISBN |
9786613332349
9781283332347 1283332345 9781118148419 111814841X 9781118148402 1118148401 9781118148372 1118148371 |
| Classificazione | TEC008090 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
INTRODUCTION TO NANOMATERIALS AND DEVICES; CONTENTS; Preface; Fundamental Constants; 1 Growth of Bulk, Thin Films, and Nanomaterials; 1.1 Introduction; 1.2 Growth of Bulk Semiconductors; 1.2.1 Liquid-Encapsulated Czochralski (LEC) Method; 1.2.2 Horizontal Bridgman Method; 1.2.3 Float-Zone Growth Method; 1.2.4 Lely Growth Method; 1.3 Growth of Semiconductor Thin Films; 1.3.1 Liquid-Phase Epitaxy Method; 1.3.2 Vapor-Phase Epitaxy Method; 1.3.3 Hydride Vapor-Phase Epitaxial Growth of Thick GaN Layers; 1.3.4 Pulsed Laser Deposition Technique; 1.3.5 Molecular Beam Epitaxy Growth Technique
1.4 Fabrication and Growth of Semiconductor Nanomaterials1.4.1 Nucleation; 1.4.2 Fabrications of Quantum Dots; 1.4.3 Epitaxial Growth of Self-Assembly Quantum Dots; 1.5 Colloidal Growth of Nanocrystals; 1.6 Summary; Problems; Bibliography; 2 Application of Quantum Mechanics to Nanomaterial Structures; 2.1 Introduction; 2.2 The de Broglie Relation; 2.3 Wave Functions and Schrödinger Equation; 2.4 Dirac Notation; 2.4.1 Action of a Linear Operator on a Bra; 2.4.2 Eigenvalues and Eigenfunctions of an Operator; 2.4.3 The Dirac d-Function 2.4.4 Fourier Series and Fourier Transform in Quantum Mechanics2.5 Variational Method; 2.6 Stationary States of a Particle in a Potential Step; 2.7 Potential Barrier with a Finite Height; 2.8 Potential Well with an Infinite Depth; 2.9 Finite Depth Potential Well; 2.10 Unbound Motion of a Particle (E > V0) in a Potential Well With a Finite Depth; 2.11 Triangular Potential Well; 2.12 Delta Function Potentials; 2.13 Transmission in Finite Double Barrier Potential Wells; 2.14 Envelope Function Approximation; 2.15 Periodic Potential; 2.15.1 Bloch's Theorem; 2.15.2 The Kronig-Penney Model 2.15.3 One-Electron Approximation in a Periodic Dirac d-Function2.15.4 Superlattices; 2.16 Effective Mass; 2.17 Summary; Problems; Bibliography; 3 Density of States in Semiconductor Materials; 3.1 Introduction; 3.2 Distribution Functions; 3.3 Maxwell-Boltzmann Statistic; 3.4 Fermi-Dirac Statistics; 3.5 Bose-Einstein Statistics; 3.6 Density of States; 3.7 Density of States of Quantum Wells, Wires, and Dots; 3.7.1 Quantum Wells; 3.7.2 Quantum Wires; 3.7.3 Quantum Dots; 3.8 Density of States of Other Systems; 3.8.1 Superlattices 3.8.2 Density of States of Bulk Electrons in the Presence of a Magnetic Field3.8.3 Density of States in the Presence of an Electric Field; 3.9 Summary; Problems; Bibliography; 4 Optical Properties; 4.1 Fundamentals; 4.2 Lorentz and Drude Models; 4.3 The Optical Absorption Coefficient of the Interband Transition in Direct Band Gap Semiconductors; 4.4 The Optical Absorption Coefficient of the Interband Transition in Indirect Band Gap Semiconductors; 4.5 The Optical Absorption Coefficient of the Interband Transition in Quantum Wells 4.6 The Optical Absorption Coefficient of the Interband Transition in Type II Superlattices |
| Record Nr. | UNINA-9910827948003321 |
|
Manasreh Mahmoud Omar
|
||
| Hoboken, N.J., : Wiley, 2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Self-organized organic semiconductors [[electronic resource] ] : from materials to device applications / / edited by Quan Li
| Self-organized organic semiconductors [[electronic resource] ] : from materials to device applications / / edited by Quan Li |
| Autore | Li Quan <1965-> |
| Pubbl/distr/stampa | Hoboken, N.J., : Wiley, 2011 |
| Descrizione fisica | 1 online resource (322 p.) |
| Disciplina | 621.3815/2 |
| Soggetto topico |
Organic semiconductors
Self-assembly (Chemistry) Self-organizing systems |
| ISBN |
1-118-00904-5
1-283-02585-X 9786613025852 0-470-94912-0 0-470-94911-2 |
| Classificazione | TEC008090 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
SELF-ORGANIZED ORGANIC SEMICONDUCTORS; CONTENTS; Preface; Contributors; 1 Crystal Engineering Organic Semiconductors; 2 Conjugated Block Copolymers and Cooligomers; 3 Charge-Carrier Transport and Its Modeling in Liquid Crystals; 4 Self-Organized Discotic Liquid Crystals as Novel Organic Semiconductors; 5 Self-Organized Semiconducting Smectic Liquid Crystals; 6 Self-Assembling of Carbon Nanotubes; 7 Self-Organized Fullerene-Based Organic Semiconductors; 8 High-Efficiency Organic Solar Cells Using Self-Organized Materials
9 Selective Molecular Assembly for Bottom-Up Fabrication of Organic Thin-Film TransistorsIndex |
| Record Nr. | UNINA-9910139190103321 |
|
Li Quan <1965->
|
||
| Hoboken, N.J., : Wiley, 2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Self-organized organic semiconductors : from materials to device applications / / edited by Quan Li
| Self-organized organic semiconductors : from materials to device applications / / edited by Quan Li |
| Autore | Li Quan <1965-> |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Hoboken, N.J., : Wiley, 2011 |
| Descrizione fisica | 1 online resource (322 p.) |
| Disciplina | 621.3815/2 |
| Soggetto topico |
Organic semiconductors
Self-assembly (Chemistry) Self-organizing systems |
| ISBN |
9786613025852
9781118009048 1118009045 9781283025850 128302585X 9780470949122 0470949120 9780470949115 0470949112 |
| Classificazione | TEC008090 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
SELF-ORGANIZED ORGANIC SEMICONDUCTORS; CONTENTS; Preface; Contributors; 1 Crystal Engineering Organic Semiconductors; 2 Conjugated Block Copolymers and Cooligomers; 3 Charge-Carrier Transport and Its Modeling in Liquid Crystals; 4 Self-Organized Discotic Liquid Crystals as Novel Organic Semiconductors; 5 Self-Organized Semiconducting Smectic Liquid Crystals; 6 Self-Assembling of Carbon Nanotubes; 7 Self-Organized Fullerene-Based Organic Semiconductors; 8 High-Efficiency Organic Solar Cells Using Self-Organized Materials
9 Selective Molecular Assembly for Bottom-Up Fabrication of Organic Thin-Film TransistorsIndex |
| Record Nr. | UNINA-9910822095103321 |
|
Li Quan <1965->
|
||
| Hoboken, N.J., : Wiley, 2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Tunnel field-effect transistors (TFET) : modelling and simulations / / Jagadesh Kumar Mamidala, Rajat Vishnoi, Pratyush Pandey
| Tunnel field-effect transistors (TFET) : modelling and simulations / / Jagadesh Kumar Mamidala, Rajat Vishnoi, Pratyush Pandey |
| Autore | Kumar Mamidala Jagadesh |
| Edizione | [1] |
| Pubbl/distr/stampa | Hoboken : , : Wiley, , 2017 |
| Descrizione fisica | 1 online resource (208 p.) |
| Disciplina | 621.3815/284 |
| Soggetto topico |
Tunnel field-effect transistors
Integrated circuits - Design and construction Nanostructured materials Low voltage integrated circuits |
| ISBN |
1-119-24630-X
1-119-24628-8 1-119-24631-8 |
| Classificazione | TEC008090 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Title Page ; Copyright; Contents; Preface; Chapter 1 Quantum mechanics ; 1.1 Introduction to quantum mechanics; 1.1.1 The double slit experiment; 1.1.2 Basic concepts of quantum mechanics; 1.1.3 Schrodingerś equation; 1.2 Basic quantum physics problems; 1.2.1 Free particle; 1.2.2 Particle in a one-dimensional box; Reference; Chapter 2 Basics of tunnelling ; 2.1 Understanding tunnelling; 2.1.1 Qualitative description; 2.1.2 Rectangular barrier; 2.2 WKB approximation; 2.3 Landauerś tunnelling formula; 2.4 Advanced tunnelling models; 2.4.1 Non-local tunnelling models
2.4.2 Local tunnelling modelsReferences; Chapter 3 The tunnel FET ; 3.1 Device structure; 3.1.1 The need for tunnel FETs; 3.1.2 Basic TFET structure; 3.2 Qualitative behaviour; 3.2.1 Band diagram; 3.2.2 Device characteristics; 3.2.3 Performance dependence on device parameters; 3.3 Types of TFETs; 3.3.1 Planar TFETs; 3.3.2 Three-dimensional TFETs; 3.3.3 Carbon nanotube and graphene TFETs; 3.3.4 Point versus line tunnelling in TFETs; 3.4 Other steep subthreshold transistors; References; Chapter 4 Drain current modelling of tunnel FET: the task and its challenges ; 4.1 Introduction 4.2 TFETmodelling approach4.2.1 Finding the value of ψC; 4.2.2 Modelling the surface potential in the source-channel junction; 4.2.3 Finding the tunnelling current; 4.3 MOSFETmodelling approach; References; Chapter 5 Modelling the surface potential in TFETs ; 5.1 The pseudo-2D method; 5.1.1 Parabolic approximation of potential distribution; 5.1.2 Solving the 2D Poisson equation using parabolic approximation; 5.1.3 Solution for the surface potential; 5.2 The variational approach; 5.2.1 The variational form of Poissonś equation 5.2.2 Solution of the variational form of Poissonś equation in a TFET5.3 The infinite series solution; 5.3.1 Solving the 2D Poisson equation using separation of variables; 5.3.2 Solution of the homogeneous boundary value problem; 5.3.3 The solution to the 2D Poisson equation in a TFET; 5.3.4 The infinite series solution to Poissonś equation in a TFET; 5.4 Extension of surface potential models to differentTFETstructures; 5.4.1 DG TFET; 5.4.2 GAA TFET; 5.4.3 Dual material gate TFET; 5.5 The effect of localised charges on the surface potential; 5.6 Surface potential in the depletion regions 5.7 Use of smoothing functions in the surface potential modelsReferences; Chapter 6 Modelling the drain current ; 6.1 Non-local methods; 6.1.1 Landauerś tunnelling formula in TFETs; 6.1.2 WKB approximation in TFETs; 6.1.3 Obtaining the drain current; 6.2 Local methods; 6.2.1 Numerical integration; 6.2.2 Shortest tunnelling length; 6.2.3 Constant polynomial term assumption; 6.2.4 Tangent line approximation; 6.3 Threshold voltage models; 6.3.1 Constant current method; 6.3.2 Constant tunnelling length; 6.3.3 Transconductance change (TC) method; References Chapter 7 Device simulation using ATLAS |
| Record Nr. | UNINA-9910135029103321 |
|
Kumar Mamidala Jagadesh
|
||
| Hoboken : , : Wiley, , 2017 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Tunnel field-effect transistors (TFET) : modelling and simulations / / Jagadesh Kumar Mamidala, Rajat Vishnoi, Pratyush Pandey
| Tunnel field-effect transistors (TFET) : modelling and simulations / / Jagadesh Kumar Mamidala, Rajat Vishnoi, Pratyush Pandey |
| Autore | Kumar Mamidala Jagadesh |
| Edizione | [1] |
| Pubbl/distr/stampa | Hoboken : , : Wiley, , 2017 |
| Descrizione fisica | 1 online resource (208 p.) |
| Disciplina | 621.3815/284 |
| Soggetto topico |
Tunnel field-effect transistors
Integrated circuits - Design and construction Nanostructured materials Low voltage integrated circuits |
| ISBN |
1-119-24630-X
1-119-24628-8 1-119-24631-8 |
| Classificazione | TEC008090 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Title Page ; Copyright; Contents; Preface; Chapter 1 Quantum mechanics ; 1.1 Introduction to quantum mechanics; 1.1.1 The double slit experiment; 1.1.2 Basic concepts of quantum mechanics; 1.1.3 Schrodingerś equation; 1.2 Basic quantum physics problems; 1.2.1 Free particle; 1.2.2 Particle in a one-dimensional box; Reference; Chapter 2 Basics of tunnelling ; 2.1 Understanding tunnelling; 2.1.1 Qualitative description; 2.1.2 Rectangular barrier; 2.2 WKB approximation; 2.3 Landauerś tunnelling formula; 2.4 Advanced tunnelling models; 2.4.1 Non-local tunnelling models
2.4.2 Local tunnelling modelsReferences; Chapter 3 The tunnel FET ; 3.1 Device structure; 3.1.1 The need for tunnel FETs; 3.1.2 Basic TFET structure; 3.2 Qualitative behaviour; 3.2.1 Band diagram; 3.2.2 Device characteristics; 3.2.3 Performance dependence on device parameters; 3.3 Types of TFETs; 3.3.1 Planar TFETs; 3.3.2 Three-dimensional TFETs; 3.3.3 Carbon nanotube and graphene TFETs; 3.3.4 Point versus line tunnelling in TFETs; 3.4 Other steep subthreshold transistors; References; Chapter 4 Drain current modelling of tunnel FET: the task and its challenges ; 4.1 Introduction 4.2 TFETmodelling approach4.2.1 Finding the value of ψC; 4.2.2 Modelling the surface potential in the source-channel junction; 4.2.3 Finding the tunnelling current; 4.3 MOSFETmodelling approach; References; Chapter 5 Modelling the surface potential in TFETs ; 5.1 The pseudo-2D method; 5.1.1 Parabolic approximation of potential distribution; 5.1.2 Solving the 2D Poisson equation using parabolic approximation; 5.1.3 Solution for the surface potential; 5.2 The variational approach; 5.2.1 The variational form of Poissonś equation 5.2.2 Solution of the variational form of Poissonś equation in a TFET5.3 The infinite series solution; 5.3.1 Solving the 2D Poisson equation using separation of variables; 5.3.2 Solution of the homogeneous boundary value problem; 5.3.3 The solution to the 2D Poisson equation in a TFET; 5.3.4 The infinite series solution to Poissonś equation in a TFET; 5.4 Extension of surface potential models to differentTFETstructures; 5.4.1 DG TFET; 5.4.2 GAA TFET; 5.4.3 Dual material gate TFET; 5.5 The effect of localised charges on the surface potential; 5.6 Surface potential in the depletion regions 5.7 Use of smoothing functions in the surface potential modelsReferences; Chapter 6 Modelling the drain current ; 6.1 Non-local methods; 6.1.1 Landauerś tunnelling formula in TFETs; 6.1.2 WKB approximation in TFETs; 6.1.3 Obtaining the drain current; 6.2 Local methods; 6.2.1 Numerical integration; 6.2.2 Shortest tunnelling length; 6.2.3 Constant polynomial term assumption; 6.2.4 Tangent line approximation; 6.3 Threshold voltage models; 6.3.1 Constant current method; 6.3.2 Constant tunnelling length; 6.3.3 Transconductance change (TC) method; References Chapter 7 Device simulation using ATLAS |
| Record Nr. | UNINA-9910817038703321 |
|
Kumar Mamidala Jagadesh
|
||
| Hoboken : , : Wiley, , 2017 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
