Info
- Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.
Zinc oxide materials for electronic and optoelectronic device applications [[electronic resource] /] / edited by Cole W. Litton, Donald C. Reynolds, Thomas C. Collins
| Zinc oxide materials for electronic and optoelectronic device applications [[electronic resource] /] / edited by Cole W. Litton, Donald C. Reynolds, Thomas C. Collins |
| Pubbl/distr/stampa | Chichester, West Sussex, : Wiley, 2011 |
| Descrizione fisica | 1 online resource (387 p.) |
| Disciplina | 669/.52 |
| Altri autori (Persone) |
LittonCole W
ReynoldsDonald C CollinsThomas C. <1936-> |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Zinc oxide
Electronic apparatus and appliances - Materials Optoelectronic devices - Materials |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-283-40526-1
9786613405265 1-119-99104-8 1-119-99103-X |
| Classificazione | TEC021000 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Zinc Oxide Materials for Electronic and Optoelectronic Device Applications; Contents; Series Preface; Preface; List of Contributors; 1 Fundamental Properties of ZnO; 1.1 Introduction; 1.1.1 Overview; 1.1.2 Organization of Chapter; 1.2 Band Structure; 1.2.1 Valence and Conduction Bands; 1.3 Optical Properties; 1.3.1 Free and Bound Excitons; 1.3.2 Effects of External Magnetic Field on ZnO Excitons; 1.3.3 Strain Field; 1.3.4 Spatial Resonance Dispersion; 1.4 Electrical Properties; 1.4.1 Intrinsic Electronic Transport Properties; 1.4.2 n-type Doping and Donor Levels
1.4.3 p-type Doping and Dopability1.4.4 Schottky Barriers and Ohmic Contacts; 1.5 Band Gap Engineering; 1.5.1 Homovalent Heterostructures; 1.5.2 Heterovalent Heterostructures; 1.6 Spintronics; 1.7 Summary; References; 2 Optical Properties of ZnO; 2.1 Introduction; 2.2 Free Excitons; 2.3 Strain Splitting of the Γ5 and Γ6 Free Excitons in ZnO; 2.4 Photoluminescence from the Two Polar Faces of ZnO; 2.5 Bound-Exciton Complexes in ZnO; 2.6 Similarities in the Photoluminescence Mechanisms of ZnO and GaN 2.7 The Combined Effects of Screening and Band Gap Renormalization on the Energy of Optical Transitions in ZnO and GaN2.8 Closely Spaced Donor-Acceptor Pairs in ZnO; 2.9 Summary; References; 3 Electrical Transport Properties in Zinc Oxide; 3.1 Introduction; 3.2 Hall-Effect Analysis; 3.2.1 Single-Band Conduction; 3.2.2 Two-Band Mixed Conduction; 3.2.3 Conducting Surface Layers; 3.3 Donor States and n-type Doping; 3.3.1 Native Point Defects - Donors; 3.3.2 Substitutional Donors; 3.4 Hydrogen; 3.5 Acceptor States and p-type Doping; 3.5.1 Native Point Defects - Acceptors 3.5.2 Substitutional Acceptors3.6 Photoconductivity; 3.7 Summary; References; 4 ZnO Surface Properties and Schottky Contacts; 4.1 Historical Background of Schottky Contacts on ZnO; 4.1.1 ZnO Surface Effects; 4.1.2 Early Schottky Barrier Studies; 4.2 Recent Schottky Barrier Studies; 4.2.1 Surface Cleaning in Vacuum; 4.2.2 Surface Cleaning Effects on Impurities and Defects; 4.3 The Influence of Surface Preparation on Schottky Barriers; 4.4 The Influence of Defects on Schottky Barriers; 4.5 The Influence of ZnO Polarity on Schottky Barriers; 4.6 The Influence of Chemistry 4.7 Charge Transport and Extended Metal-ZnO Schottky Barriers4.8 Conclusion; Acknowledgements; References; 5 Native Point Defects and Doping in ZnO; 5.1 Introduction; 5.2 Theoretical Framework; 5.3 Native Point Defects; 5.3.1 Oxygen Vacancies; 5.3.2 Zinc Interstitials; 5.3.3 Zinc Antisites; 5.3.4 Zinc Vacancies; 5.3.5 Defect Migration; 5.4 Donor Impurities; 5.4.1 Aluminum, Gallium and Indium; 5.4.2 Fluorine; 5.4.3 Hydrogen; 5.5 Acceptor Impurities; 5.5.1 Lithium; 5.5.2 Copper; 5.5.3 Nitrogen; 5.5.4 Phosphorous, Arsenic and Antimony; 5.5.5 Co-Doping; 5.6 Isoelectronic Impurities Acknowledgements |
| Record Nr. | UNINA-9910130877303321 |
| Chichester, West Sussex, : Wiley, 2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Zinc oxide materials for electronic and optoelectronic device applications [[electronic resource] /] / edited by Cole W. Litton, Donald C. Reynolds, Thomas C. Collins
| Zinc oxide materials for electronic and optoelectronic device applications [[electronic resource] /] / edited by Cole W. Litton, Donald C. Reynolds, Thomas C. Collins |
| Pubbl/distr/stampa | Chichester, West Sussex, : Wiley, 2011 |
| Descrizione fisica | 1 online resource (387 p.) |
| Disciplina | 669/.52 |
| Altri autori (Persone) |
LittonCole W
ReynoldsDonald C CollinsThomas C. <1936-> |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Zinc oxide
Electronic apparatus and appliances - Materials Optoelectronic devices - Materials |
| ISBN |
1-283-40526-1
9786613405265 1-119-99104-8 1-119-99103-X |
| Classificazione | TEC021000 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Zinc Oxide Materials for Electronic and Optoelectronic Device Applications; Contents; Series Preface; Preface; List of Contributors; 1 Fundamental Properties of ZnO; 1.1 Introduction; 1.1.1 Overview; 1.1.2 Organization of Chapter; 1.2 Band Structure; 1.2.1 Valence and Conduction Bands; 1.3 Optical Properties; 1.3.1 Free and Bound Excitons; 1.3.2 Effects of External Magnetic Field on ZnO Excitons; 1.3.3 Strain Field; 1.3.4 Spatial Resonance Dispersion; 1.4 Electrical Properties; 1.4.1 Intrinsic Electronic Transport Properties; 1.4.2 n-type Doping and Donor Levels
1.4.3 p-type Doping and Dopability1.4.4 Schottky Barriers and Ohmic Contacts; 1.5 Band Gap Engineering; 1.5.1 Homovalent Heterostructures; 1.5.2 Heterovalent Heterostructures; 1.6 Spintronics; 1.7 Summary; References; 2 Optical Properties of ZnO; 2.1 Introduction; 2.2 Free Excitons; 2.3 Strain Splitting of the Γ5 and Γ6 Free Excitons in ZnO; 2.4 Photoluminescence from the Two Polar Faces of ZnO; 2.5 Bound-Exciton Complexes in ZnO; 2.6 Similarities in the Photoluminescence Mechanisms of ZnO and GaN 2.7 The Combined Effects of Screening and Band Gap Renormalization on the Energy of Optical Transitions in ZnO and GaN2.8 Closely Spaced Donor-Acceptor Pairs in ZnO; 2.9 Summary; References; 3 Electrical Transport Properties in Zinc Oxide; 3.1 Introduction; 3.2 Hall-Effect Analysis; 3.2.1 Single-Band Conduction; 3.2.2 Two-Band Mixed Conduction; 3.2.3 Conducting Surface Layers; 3.3 Donor States and n-type Doping; 3.3.1 Native Point Defects - Donors; 3.3.2 Substitutional Donors; 3.4 Hydrogen; 3.5 Acceptor States and p-type Doping; 3.5.1 Native Point Defects - Acceptors 3.5.2 Substitutional Acceptors3.6 Photoconductivity; 3.7 Summary; References; 4 ZnO Surface Properties and Schottky Contacts; 4.1 Historical Background of Schottky Contacts on ZnO; 4.1.1 ZnO Surface Effects; 4.1.2 Early Schottky Barrier Studies; 4.2 Recent Schottky Barrier Studies; 4.2.1 Surface Cleaning in Vacuum; 4.2.2 Surface Cleaning Effects on Impurities and Defects; 4.3 The Influence of Surface Preparation on Schottky Barriers; 4.4 The Influence of Defects on Schottky Barriers; 4.5 The Influence of ZnO Polarity on Schottky Barriers; 4.6 The Influence of Chemistry 4.7 Charge Transport and Extended Metal-ZnO Schottky Barriers4.8 Conclusion; Acknowledgements; References; 5 Native Point Defects and Doping in ZnO; 5.1 Introduction; 5.2 Theoretical Framework; 5.3 Native Point Defects; 5.3.1 Oxygen Vacancies; 5.3.2 Zinc Interstitials; 5.3.3 Zinc Antisites; 5.3.4 Zinc Vacancies; 5.3.5 Defect Migration; 5.4 Donor Impurities; 5.4.1 Aluminum, Gallium and Indium; 5.4.2 Fluorine; 5.4.3 Hydrogen; 5.5 Acceptor Impurities; 5.5.1 Lithium; 5.5.2 Copper; 5.5.3 Nitrogen; 5.5.4 Phosphorous, Arsenic and Antimony; 5.5.5 Co-Doping; 5.6 Isoelectronic Impurities Acknowledgements |
| Record Nr. | UNINA-9910830329803321 |
| Chichester, West Sussex, : Wiley, 2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Zinc oxide materials for electronic and optoelectronic device applications [[electronic resource] /] / edited by Cole W. Litton, Donald C. Reynolds, Thomas C. Collins
| Zinc oxide materials for electronic and optoelectronic device applications [[electronic resource] /] / edited by Cole W. Litton, Donald C. Reynolds, Thomas C. Collins |
| Pubbl/distr/stampa | Chichester, West Sussex, : Wiley, 2011 |
| Descrizione fisica | 1 online resource (387 p.) |
| Disciplina | 669/.52 |
| Altri autori (Persone) |
LittonCole W
ReynoldsDonald C CollinsThomas C. <1936-> |
| Collana | Wiley series in materials for electronic and optoelectronic applications |
| Soggetto topico |
Zinc oxide
Electronic apparatus and appliances - Materials Optoelectronic devices - Materials |
| ISBN |
1-283-40526-1
9786613405265 1-119-99104-8 1-119-99103-X |
| Classificazione | TEC021000 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Zinc Oxide Materials for Electronic and Optoelectronic Device Applications; Contents; Series Preface; Preface; List of Contributors; 1 Fundamental Properties of ZnO; 1.1 Introduction; 1.1.1 Overview; 1.1.2 Organization of Chapter; 1.2 Band Structure; 1.2.1 Valence and Conduction Bands; 1.3 Optical Properties; 1.3.1 Free and Bound Excitons; 1.3.2 Effects of External Magnetic Field on ZnO Excitons; 1.3.3 Strain Field; 1.3.4 Spatial Resonance Dispersion; 1.4 Electrical Properties; 1.4.1 Intrinsic Electronic Transport Properties; 1.4.2 n-type Doping and Donor Levels
1.4.3 p-type Doping and Dopability1.4.4 Schottky Barriers and Ohmic Contacts; 1.5 Band Gap Engineering; 1.5.1 Homovalent Heterostructures; 1.5.2 Heterovalent Heterostructures; 1.6 Spintronics; 1.7 Summary; References; 2 Optical Properties of ZnO; 2.1 Introduction; 2.2 Free Excitons; 2.3 Strain Splitting of the Γ5 and Γ6 Free Excitons in ZnO; 2.4 Photoluminescence from the Two Polar Faces of ZnO; 2.5 Bound-Exciton Complexes in ZnO; 2.6 Similarities in the Photoluminescence Mechanisms of ZnO and GaN 2.7 The Combined Effects of Screening and Band Gap Renormalization on the Energy of Optical Transitions in ZnO and GaN2.8 Closely Spaced Donor-Acceptor Pairs in ZnO; 2.9 Summary; References; 3 Electrical Transport Properties in Zinc Oxide; 3.1 Introduction; 3.2 Hall-Effect Analysis; 3.2.1 Single-Band Conduction; 3.2.2 Two-Band Mixed Conduction; 3.2.3 Conducting Surface Layers; 3.3 Donor States and n-type Doping; 3.3.1 Native Point Defects - Donors; 3.3.2 Substitutional Donors; 3.4 Hydrogen; 3.5 Acceptor States and p-type Doping; 3.5.1 Native Point Defects - Acceptors 3.5.2 Substitutional Acceptors3.6 Photoconductivity; 3.7 Summary; References; 4 ZnO Surface Properties and Schottky Contacts; 4.1 Historical Background of Schottky Contacts on ZnO; 4.1.1 ZnO Surface Effects; 4.1.2 Early Schottky Barrier Studies; 4.2 Recent Schottky Barrier Studies; 4.2.1 Surface Cleaning in Vacuum; 4.2.2 Surface Cleaning Effects on Impurities and Defects; 4.3 The Influence of Surface Preparation on Schottky Barriers; 4.4 The Influence of Defects on Schottky Barriers; 4.5 The Influence of ZnO Polarity on Schottky Barriers; 4.6 The Influence of Chemistry 4.7 Charge Transport and Extended Metal-ZnO Schottky Barriers4.8 Conclusion; Acknowledgements; References; 5 Native Point Defects and Doping in ZnO; 5.1 Introduction; 5.2 Theoretical Framework; 5.3 Native Point Defects; 5.3.1 Oxygen Vacancies; 5.3.2 Zinc Interstitials; 5.3.3 Zinc Antisites; 5.3.4 Zinc Vacancies; 5.3.5 Defect Migration; 5.4 Donor Impurities; 5.4.1 Aluminum, Gallium and Indium; 5.4.2 Fluorine; 5.4.3 Hydrogen; 5.5 Acceptor Impurities; 5.5.1 Lithium; 5.5.2 Copper; 5.5.3 Nitrogen; 5.5.4 Phosphorous, Arsenic and Antimony; 5.5.5 Co-Doping; 5.6 Isoelectronic Impurities Acknowledgements |
| Record Nr. | UNINA-9910840844103321 |
| Chichester, West Sussex, : Wiley, 2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||