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An introduction to molecular electronics / edited by Michael C. Petty, Martin R. Bryce and David Bloor
| An introduction to molecular electronics / edited by Michael C. Petty, Martin R. Bryce and David Bloor |
| Autore | Petty, Michael C. |
| Pubbl/distr/stampa | London ; Melbourne ; Auckland : Edward Arnold, c 1995 |
| Descrizione fisica | xiv, 387 p. ; 24 cm |
| Disciplina | 621.38171 |
| Altri autori (Persone) |
Bryce, Martin R.
Bloor, David |
| Soggetto topico | Elettronica molecolare |
| ISBN | 0340580097 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | en |
| Record Nr. | UNISALENTO-991000172559707536 |
Petty, Michael C.
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| London ; Melbourne ; Auckland : Edward Arnold, c 1995 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. del Salento | ||
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Molecular electronic devices / Forrest L. Carter
| Molecular electronic devices / Forrest L. Carter |
| Autore | Carter, Forrest L. |
| Pubbl/distr/stampa | New York ; Basel : Marcel Dekker, c 1982 |
| Descrizione fisica | 2 v. (xii, 386 p.) (xvii, 825 p.) ; 23 cm |
| Disciplina |
621.381
621.38171 |
| Soggetto topico |
Elettronica molecolare - Congressi
Elettronica molecolare - Dispositivi - Congressi |
| ISBN |
0824775627 (vol.2)
0824780582 (vol.1) |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISALENTO-991000182129707536 |
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Carter, Forrest L.
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| New York ; Basel : Marcel Dekker, c 1982 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. del Salento | ||
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Structure and electronic properties of ultrathin in films on Si(111) / / Shigemi Terakawa
| Structure and electronic properties of ultrathin in films on Si(111) / / Shigemi Terakawa |
| Autore | Terakawa Shigemi |
| Pubbl/distr/stampa | Singapore : , : Springer, , [2022] |
| Descrizione fisica | 1 online resource (83 pages) |
| Disciplina | 621.38171 |
| Collana | Springer theses |
| Soggetto topico |
Metallic films
Semiconductor films |
| ISBN |
9789811968723
9789811968716 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Intro -- Supervisor's Foreword -- Abstract -- Acknowledgements -- Contents -- 1 Introduction -- 1.1 Ultrathin Metal Films -- 1.2 Thin Indium Films on Si(111) -- 1.3 In/Si(111) Surface Superstructures -- 1.4 Bonding Between Metal Layers and Substrates -- 1.5 Outline of the Thesis -- References -- 2 Experimental Methods -- 2.1 Low-Energy Electron Diffraction (LEED) -- 2.1.1 Kinematic Theory -- 2.1.2 Dynamical Theory -- 2.1.3 Apparatus -- 2.2 Scanning Tunneling Microscopy (STM) -- 2.2.1 Theory and Apparatus -- 2.3 Angle-Resolved Photoelectron Spectroscopy (ARPES) -- 2.3.1 Theory -- 2.3.2 Apparatus -- 2.4 Four-Point-Probe (4PP) Conductivity Measurements -- 2.4.1 Theory and Apparatus -- 2.5 Experiments -- 2.5.1 Chamber 1 (ARPES, LEED) -- 2.5.2 Chamber 2 (ARPES, LEED) -- 2.5.3 Chamber 3 (STM) -- 2.5.4 Chamber 4 (4PP Conductivity Measurements, LEED) -- 2.5.5 Chamber 5 (LEED) -- 2.5.6 Samples -- References -- 3 Structure and Electronic Properties of In Single-Layer Metal on Si(111) -- 3.1 Introduction -- 3.2 Preparation of the In/Si(111) left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )-Hex and left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )-Striped Phases -- 3.3 The Atomic Structure of the In/Si(111) ``left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )''-Hex Phase -- 3.3.1 LEED and STM Observations -- 3.3.2 Structure Model -- 3.3.3 First-Principles Calculation -- 3.4 Electronic Structure and Phase Transition of the Indium Monolayer on Si(111) -- 3.4.1 Electronic Structure of the In/Si(111) Hex Phase -- 3.4.2 Phase Transition of the In/Si(111) Hex Phase -- 3.5 Summary -- References -- 4 Structure and Electronic Properties of Ultrathin (In, Mg) Films on Si(111) -- 4.1 Introduction.
4.2 Structure Change by Mg Deposition onto the In/Si(111) left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )-Rect Phase -- 4.2.1 LEED and STM Observations -- 4.2.2 Structure Determination by First-Principles Calculation -- 4.3 The Electronic Structure of the (In, Mg)/Si(111) left parenthesis StartRoot 3 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt3 timessqrt3 ) Phase -- 4.3.1 ARPES Experiments -- 4.3.2 Band Calculation -- 4.4 Summary -- References -- 5 Conclusions -- Appendix Curriculum Vitae. |
| Record Nr. | UNINA-9910629294203321 |
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Terakawa Shigemi
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| Singapore : , : Springer, , [2022] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Structure and electronic properties of ultrathin in films on Si(111) / / Shigemi Terakawa
| Structure and electronic properties of ultrathin in films on Si(111) / / Shigemi Terakawa |
| Autore | Terakawa Shigemi |
| Pubbl/distr/stampa | Singapore : , : Springer, , [2022] |
| Descrizione fisica | 1 online resource (83 pages) |
| Disciplina | 621.38171 |
| Collana | Springer theses |
| Soggetto topico |
Metallic films
Semiconductor films |
| ISBN |
9789811968723
9789811968716 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Intro -- Supervisor's Foreword -- Abstract -- Acknowledgements -- Contents -- 1 Introduction -- 1.1 Ultrathin Metal Films -- 1.2 Thin Indium Films on Si(111) -- 1.3 In/Si(111) Surface Superstructures -- 1.4 Bonding Between Metal Layers and Substrates -- 1.5 Outline of the Thesis -- References -- 2 Experimental Methods -- 2.1 Low-Energy Electron Diffraction (LEED) -- 2.1.1 Kinematic Theory -- 2.1.2 Dynamical Theory -- 2.1.3 Apparatus -- 2.2 Scanning Tunneling Microscopy (STM) -- 2.2.1 Theory and Apparatus -- 2.3 Angle-Resolved Photoelectron Spectroscopy (ARPES) -- 2.3.1 Theory -- 2.3.2 Apparatus -- 2.4 Four-Point-Probe (4PP) Conductivity Measurements -- 2.4.1 Theory and Apparatus -- 2.5 Experiments -- 2.5.1 Chamber 1 (ARPES, LEED) -- 2.5.2 Chamber 2 (ARPES, LEED) -- 2.5.3 Chamber 3 (STM) -- 2.5.4 Chamber 4 (4PP Conductivity Measurements, LEED) -- 2.5.5 Chamber 5 (LEED) -- 2.5.6 Samples -- References -- 3 Structure and Electronic Properties of In Single-Layer Metal on Si(111) -- 3.1 Introduction -- 3.2 Preparation of the In/Si(111) left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )-Hex and left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )-Striped Phases -- 3.3 The Atomic Structure of the In/Si(111) ``left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )''-Hex Phase -- 3.3.1 LEED and STM Observations -- 3.3.2 Structure Model -- 3.3.3 First-Principles Calculation -- 3.4 Electronic Structure and Phase Transition of the Indium Monolayer on Si(111) -- 3.4.1 Electronic Structure of the In/Si(111) Hex Phase -- 3.4.2 Phase Transition of the In/Si(111) Hex Phase -- 3.5 Summary -- References -- 4 Structure and Electronic Properties of Ultrathin (In, Mg) Films on Si(111) -- 4.1 Introduction.
4.2 Structure Change by Mg Deposition onto the In/Si(111) left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )-Rect Phase -- 4.2.1 LEED and STM Observations -- 4.2.2 Structure Determination by First-Principles Calculation -- 4.3 The Electronic Structure of the (In, Mg)/Si(111) left parenthesis StartRoot 3 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt3 timessqrt3 ) Phase -- 4.3.1 ARPES Experiments -- 4.3.2 Band Calculation -- 4.4 Summary -- References -- 5 Conclusions -- Appendix Curriculum Vitae. |
| Record Nr. | UNISA-996499863903316 |
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Terakawa Shigemi
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| Singapore : , : Springer, , [2022] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
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VLSI fabrication principles : silicon and gallium arsenide / Sorab K. Ghandhi
| VLSI fabrication principles : silicon and gallium arsenide / Sorab K. Ghandhi |
| Autore | GHANDHI, Sorab K. |
| Pubbl/distr/stampa | New York [etc.] : Wiley & Sons, copyr. 1983 |
| Descrizione fisica | XI, 665 p. : ill. ; 24 cm |
| Disciplina | 621.38171 |
| Soggetto topico | Circuiti integrati complessi - Silicio - Arsenuro di gallio |
| ISBN | 0-471-86833-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-990001261490203316 |
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GHANDHI, Sorab K.
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| New York [etc.] : Wiley & Sons, copyr. 1983 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
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VLSI system design : when and how to design very-largescale integrated circuits / Saburo Muroga
| VLSI system design : when and how to design very-largescale integrated circuits / Saburo Muroga |
| Autore | MUROGA, Saburo |
| Pubbl/distr/stampa | New York : John Wiley & Sons, 1982 |
| Descrizione fisica | XII, 495 p. ; 24 cm |
| Disciplina | 621.38171 |
| Soggetto topico | Circuiti integrati |
| ISBN | 0-471-86090-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-990005813720203316 |
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MUROGA, Saburo
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| New York : John Wiley & Sons, 1982 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
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