Info
- Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.
Advanced SPICE model for GaN HEMTs (ASM-HEMT) : a new industry-standard compact model for GaN-based power and RF circuit design / / Sourabh Khandelwal
| Advanced SPICE model for GaN HEMTs (ASM-HEMT) : a new industry-standard compact model for GaN-based power and RF circuit design / / Sourabh Khandelwal |
| Autore | Khandelwal Sourabh |
| Pubbl/distr/stampa | Cham, Switzerland : , : Springer, , [2022] |
| Descrizione fisica | 1 online resource (194 pages) |
| Disciplina | 621.3815284 |
| Soggetto topico |
Modulation-doped field-effect transistors
Radio frequency integrated circuits Semiconductors |
| ISBN |
9783030777302
9783030777296 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910523725103321 |
Khandelwal Sourabh
|
||
| Cham, Switzerland : , : Springer, , [2022] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor / / by Iraj Sadegh Amiri, Mahdiar Ghadiry
| Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor / / by Iraj Sadegh Amiri, Mahdiar Ghadiry |
| Autore | Amiri Iraj Sadegh |
| Edizione | [1st ed. 2018.] |
| Pubbl/distr/stampa | Singapore : , : Springer Singapore : , : Imprint : Springer, , 2018 |
| Descrizione fisica | 1 online resource (IX, 86 p. 55 illus., 16 illus. in color.) |
| Disciplina | 621.3815284 |
| Collana | SpringerBriefs in Applied Sciences and Technology |
| Soggetto topico |
Nanotechnology
Electronic circuits Nanotechnology and Microengineering Electronic Circuits and Devices |
| ISBN | 981-10-6550-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Introduction on Scaling Issues of Conventional Semiconductors -- Basic Concept of Field Effect Transistors -- Methodology for Modelling of Surface Potemntial, Ionization and Breakdown of Graphene Field Effect Transistors -- Results and Discussion on Ionization and Breakdown of Grapehene Field Efffect Transistor -- Conclusion and Futureworks on High Voltage Application of Graphene. |
| Record Nr. | UNINA-9910299564703321 |
|
Amiri Iraj Sadegh
|
||
| Singapore : , : Springer Singapore : , : Imprint : Springer, , 2018 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
ANSI/IEEE Std 641-1987 / / Institute of Electrical and Electronics Engineers
| ANSI/IEEE Std 641-1987 / / Institute of Electrical and Electronics Engineers |
| Pubbl/distr/stampa | [Place of publication not identified] : , : IEEE, , 1988 |
| Descrizione fisica | 1 online resource (33 pages) |
| Disciplina | 621.3815284 |
| Soggetto topico | Field-effect transistors |
| ISBN | 0-7381-4235-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | ANSI/IEEE Std 641-1987: IEEE Standard Definitions and Characterization of Metal Nitride Oxide Semiconductor Arrays |
| Record Nr. | UNINA-9910135267403321 |
| [Place of publication not identified] : , : IEEE, , 1988 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
ANSI/IEEE Std 641-1987 / / Institute of Electrical and Electronics Engineers
| ANSI/IEEE Std 641-1987 / / Institute of Electrical and Electronics Engineers |
| Pubbl/distr/stampa | [Place of publication not identified] : , : IEEE, , 1988 |
| Descrizione fisica | 1 online resource (33 pages) |
| Disciplina | 621.3815284 |
| Soggetto topico | Field-effect transistors |
| ISBN | 0-7381-4235-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | ANSI/IEEE Std 641-1987: IEEE Standard Definitions and Characterization of Metal Nitride Oxide Semiconductor Arrays |
| Record Nr. | UNISA-996279556003316 |
| [Place of publication not identified] : , : IEEE, , 1988 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
Charge Transport in Low Dimensional Semiconductor Structures [[electronic resource] ] : The Maximum Entropy Approach / / by Vito Dario Camiola, Giovanni Mascali, Vittorio Romano
| Charge Transport in Low Dimensional Semiconductor Structures [[electronic resource] ] : The Maximum Entropy Approach / / by Vito Dario Camiola, Giovanni Mascali, Vittorio Romano |
| Autore | Camiola Vito Dario |
| Edizione | [1st ed. 2020.] |
| Pubbl/distr/stampa | Cham : , : Springer International Publishing : , : Imprint : Springer, , 2020 |
| Descrizione fisica | 1 online resource (XVI, 337 p. 83 illus., 23 illus. in color.) |
| Disciplina | 621.3815284 |
| Collana | The European Consortium for Mathematics in Industry |
| Soggetto topico |
Mathematical physics
Applied mathematics Engineering mathematics Nanotechnology Mathematical Physics Theoretical, Mathematical and Computational Physics Mathematical and Computational Engineering |
| ISBN | 3-030-35993-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Band Structure and Boltzmann Equation -- Maximum Entropy Principle -- Application of MEP to Charge Transport in Semiconductors -- Application of MEP to Silicon -- Some Formal Properties of the Hydrodynamical Model -- Quantum Corrections to the Semiclassical Models -- Mathematical Models for the Double-Gate MOSFET -- Numerical Method and Simulations -- Application of MEP to Charge Transport in Graphene. |
| Record Nr. | UNISA-996418193503316 |
|
Camiola Vito Dario
|
||
| Cham : , : Springer International Publishing : , : Imprint : Springer, , 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
Charge Transport in Low Dimensional Semiconductor Structures : The Maximum Entropy Approach / / by Vito Dario Camiola, Giovanni Mascali, Vittorio Romano
| Charge Transport in Low Dimensional Semiconductor Structures : The Maximum Entropy Approach / / by Vito Dario Camiola, Giovanni Mascali, Vittorio Romano |
| Autore | Camiola Vito Dario |
| Edizione | [1st ed. 2020.] |
| Pubbl/distr/stampa | Cham : , : Springer International Publishing : , : Imprint : Springer, , 2020 |
| Descrizione fisica | 1 online resource (XVI, 337 p. 83 illus., 23 illus. in color.) |
| Disciplina | 621.3815284 |
| Collana | The European Consortium for Mathematics in Industry |
| Soggetto topico |
Mathematical physics
Applied mathematics Engineering mathematics Nanotechnology Mathematical Physics Theoretical, Mathematical and Computational Physics Mathematical and Computational Engineering |
| ISBN | 3-030-35993-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Band Structure and Boltzmann Equation -- Maximum Entropy Principle -- Application of MEP to Charge Transport in Semiconductors -- Application of MEP to Silicon -- Some Formal Properties of the Hydrodynamical Model -- Quantum Corrections to the Semiclassical Models -- Mathematical Models for the Double-Gate MOSFET -- Numerical Method and Simulations -- Application of MEP to Charge Transport in Graphene. |
| Record Nr. | UNINA-9910483112403321 |
|
Camiola Vito Dario
|
||
| Cham : , : Springer International Publishing : , : Imprint : Springer, , 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Charge-based MOS transistor modeling [[electronic resource] ] : the EKV model for low-power and RF IC design / / Christian C. Enz, Eric A. Vittoz
| Charge-based MOS transistor modeling [[electronic resource] ] : the EKV model for low-power and RF IC design / / Christian C. Enz, Eric A. Vittoz |
| Autore | Enz Christian |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : John Wiley, c2006 |
| Descrizione fisica | 1 online resource (329 p.) |
| Disciplina | 621.3815284 |
| Altri autori (Persone) | VittozEric A. <1938-> |
| Soggetto topico |
Metal oxide semiconductors - Mathematical models
Metal oxide semiconductor field-effect transistors - Mathematical models |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-280-64993-3
9786610649938 0-470-85546-0 0-470-85545-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Charge-based MOS Transistor Modeling; Contents; Foreword; Preface; List of Symbols; 1 Introduction; 1.1 The Importance of Device Modeling for IC Design; 1.2 A Short History of the EKV MOS Transistor Model; 1.3 The Book Structure; Part I The Basic Long-Channel Intrinsic Charge-Based Model; 2 Definitions; 2.1 The N-channel Transistor Structure; 2.2 Definition of Charges, Current, Potential, and Electric Fields; 2.3 Transistor Symbol and P-Channel Transistor; 3 The Basic Charge Model; 3.1 Poisson's Equation and Gradual Channel Approximation; 3.2 Surface Potential as a Function of Gate Voltage
3.3 Gate Capacitance3.4 Charge Sheet Approximation; 3.5 Density of Mobile Inverted Charge; 3.5.1 Mobile Charge as a Function of Gate Voltage and Surface Potential; 3.5.2 Mobile Charge as a Function of Channel Voltage and Surface Potential; 3.6 Charge-Potential Linearization; 3.6.1 Linearization of Qi (s); 3.6.2 Linearized Bulk Depletion Charge Qb; 3.6.3 Strong Inversion Approximation; 3.6.4 Evaluation of the Slope Factor; 3.6.5 Compact Model Parameters; 4 Static Drain Current; 4.1 Drain Current Expression; 4.2 Forward and Reverse Current Components; 4.3 Modes of Operation 4.4 Model of Drain Current Based on Charge Linearization4.4.1 Expression Valid for All Levels of Inversion; 4.4.2 Compact Model Parameters; 4.4.3 Inversion Coefficient; 4.4.4 Approximation of the Drain Current in Strong Inversion; 4.4.5 Approximation of the Drain Current in Weak Inversion; 4.4.6 Alternative Continuous Models; 4.5 Fundamental Property: Validity and Application; 4.5.1 Generalization of Drain Current Expression; 4.5.2 Domain of Validity; 4.5.3 Causes of Degradation; 4.5.4 Concept of Pseudo-Resistor; 4.6 Channel Length Modulation; 4.6.1 Effective Channel Length 4.6.2 Weak Inversion4.6.3 Strong Inversion; 4.6.4 Geometrical Effects; 5 The Small-Signal Model; 5.1 The Static Small-Signal Model; 5.1.1 Transconductances; 5.1.2 Residual Output Conductance in Saturation; 5.1.3 Equivalent Circuit; 5.1.4 The Normalized Transconductance to Drain Current Ratio; 5.2 A General NQS Small-Signal Model; 5.3 The QS Dynamic Small-Signal Model; 5.3.1 Intrinsic Capacitances; 5.3.2 Transcapacitances; 5.3.3 Complete QS Circuit; 5.3.4 Domains of Validity of the Different Models; 6 The Noise Model; 6.1 Noise Calculation Methods; 6.1.1 General Expression 6.1.2 Long-Channel Simplification6.2 Low-Frequency Channel Thermal Noise; 6.2.1 Drain Current Thermal Noise PSD; 6.2.2 Thermal Noise Excess Factor Definitions; 6.2.3 Circuit Examples; 6.3 Flicker Noise; 6.3.1 Carrier Number Fluctuations (Mc Worther Model); 6.3.2 Mobility Fluctuations (Hooge Model); 6.3.3 Additional Contributions Due to the Source and Drain Access Resistances; 6.3.4 Total 1/f Noise at the Drain; 6.3.5 Scaling Properties; 6.4 Appendices; Appendix: The Nyquist and Bode Theorems; Appendix: General Noise Expression; 7 Temperature Effects and Matching; 7.1 Introduction 7.2 Temperature Effects |
| Record Nr. | UNINA-9910143747403321 |
|
Enz Christian
|
||
| Chichester, England ; ; Hoboken, NJ, : John Wiley, c2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Charge-based MOS transistor modeling [[electronic resource] ] : the EKV model for low-power and RF IC design / / Christian C. Enz, Eric A. Vittoz
| Charge-based MOS transistor modeling [[electronic resource] ] : the EKV model for low-power and RF IC design / / Christian C. Enz, Eric A. Vittoz |
| Autore | Enz Christian |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : John Wiley, c2006 |
| Descrizione fisica | 1 online resource (329 p.) |
| Disciplina | 621.3815284 |
| Altri autori (Persone) | VittozEric A. <1938-> |
| Soggetto topico |
Metal oxide semiconductors - Mathematical models
Metal oxide semiconductor field-effect transistors - Mathematical models |
| ISBN |
1-280-64993-3
9786610649938 0-470-85546-0 0-470-85545-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Charge-based MOS Transistor Modeling; Contents; Foreword; Preface; List of Symbols; 1 Introduction; 1.1 The Importance of Device Modeling for IC Design; 1.2 A Short History of the EKV MOS Transistor Model; 1.3 The Book Structure; Part I The Basic Long-Channel Intrinsic Charge-Based Model; 2 Definitions; 2.1 The N-channel Transistor Structure; 2.2 Definition of Charges, Current, Potential, and Electric Fields; 2.3 Transistor Symbol and P-Channel Transistor; 3 The Basic Charge Model; 3.1 Poisson's Equation and Gradual Channel Approximation; 3.2 Surface Potential as a Function of Gate Voltage
3.3 Gate Capacitance3.4 Charge Sheet Approximation; 3.5 Density of Mobile Inverted Charge; 3.5.1 Mobile Charge as a Function of Gate Voltage and Surface Potential; 3.5.2 Mobile Charge as a Function of Channel Voltage and Surface Potential; 3.6 Charge-Potential Linearization; 3.6.1 Linearization of Qi (s); 3.6.2 Linearized Bulk Depletion Charge Qb; 3.6.3 Strong Inversion Approximation; 3.6.4 Evaluation of the Slope Factor; 3.6.5 Compact Model Parameters; 4 Static Drain Current; 4.1 Drain Current Expression; 4.2 Forward and Reverse Current Components; 4.3 Modes of Operation 4.4 Model of Drain Current Based on Charge Linearization4.4.1 Expression Valid for All Levels of Inversion; 4.4.2 Compact Model Parameters; 4.4.3 Inversion Coefficient; 4.4.4 Approximation of the Drain Current in Strong Inversion; 4.4.5 Approximation of the Drain Current in Weak Inversion; 4.4.6 Alternative Continuous Models; 4.5 Fundamental Property: Validity and Application; 4.5.1 Generalization of Drain Current Expression; 4.5.2 Domain of Validity; 4.5.3 Causes of Degradation; 4.5.4 Concept of Pseudo-Resistor; 4.6 Channel Length Modulation; 4.6.1 Effective Channel Length 4.6.2 Weak Inversion4.6.3 Strong Inversion; 4.6.4 Geometrical Effects; 5 The Small-Signal Model; 5.1 The Static Small-Signal Model; 5.1.1 Transconductances; 5.1.2 Residual Output Conductance in Saturation; 5.1.3 Equivalent Circuit; 5.1.4 The Normalized Transconductance to Drain Current Ratio; 5.2 A General NQS Small-Signal Model; 5.3 The QS Dynamic Small-Signal Model; 5.3.1 Intrinsic Capacitances; 5.3.2 Transcapacitances; 5.3.3 Complete QS Circuit; 5.3.4 Domains of Validity of the Different Models; 6 The Noise Model; 6.1 Noise Calculation Methods; 6.1.1 General Expression 6.1.2 Long-Channel Simplification6.2 Low-Frequency Channel Thermal Noise; 6.2.1 Drain Current Thermal Noise PSD; 6.2.2 Thermal Noise Excess Factor Definitions; 6.2.3 Circuit Examples; 6.3 Flicker Noise; 6.3.1 Carrier Number Fluctuations (Mc Worther Model); 6.3.2 Mobility Fluctuations (Hooge Model); 6.3.3 Additional Contributions Due to the Source and Drain Access Resistances; 6.3.4 Total 1/f Noise at the Drain; 6.3.5 Scaling Properties; 6.4 Appendices; Appendix: The Nyquist and Bode Theorems; Appendix: General Noise Expression; 7 Temperature Effects and Matching; 7.1 Introduction 7.2 Temperature Effects |
| Record Nr. | UNINA-9910830878003321 |
|
Enz Christian
|
||
| Chichester, England ; ; Hoboken, NJ, : John Wiley, c2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Complementary Metal Oxide Semiconductor / / edited by Kim Ho Yeap and Humaira Nisar
| Complementary Metal Oxide Semiconductor / / edited by Kim Ho Yeap and Humaira Nisar |
| Pubbl/distr/stampa | Croatia : , : IntechOpen, , 2018 |
| Descrizione fisica | 1 online resource (162 pages) : illustrations |
| Disciplina | 621.3815284 |
| Soggetto topico | Metal oxide semiconductor field-effect transistors |
| ISBN |
1-83881-512-0
1-78923-497-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910317801903321 |
| Croatia : , : IntechOpen, , 2018 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Design, Synthesis, and Structure-Property Relationship Study of Polymer Field-Effect Transistors / / by Ting Lei
| Design, Synthesis, and Structure-Property Relationship Study of Polymer Field-Effect Transistors / / by Ting Lei |
| Autore | Lei Ting |
| Edizione | [1st ed. 2015.] |
| Pubbl/distr/stampa | Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2015 |
| Descrizione fisica | 1 online resource (124 p.) |
| Disciplina |
621.381
621.3815284 |
| Collana | Springer Theses, Recognizing Outstanding Ph.D. Research |
| Soggetto topico |
Optical materials
Electronic materials Polymers Electronics Microelectronics Renewable energy resources Optical and Electronic Materials Polymer Sciences Electronics and Microelectronics, Instrumentation Renewable and Green Energy |
| ISBN | 3-662-45667-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Introduction -- Side Chain Effects and Design of Isoindigo-Based Polymers -- Ambipolar Polymer Field-Effect Transistors Based on Functionalized Isoindigo -- BDOPV-A Strong Electron-Deficient Building Block for Polymer Field-Effect Transistors -- Summary and Outlook. |
| Record Nr. | UNINA-9910298611603321 |
|
Lei Ting
|
||
| Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
