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Active-matrix organic light-emitting display technologies / / by Shuming Chen [and four others]
| Active-matrix organic light-emitting display technologies / / by Shuming Chen [and four others] |
| Pubbl/distr/stampa | Sharjah, United Arab Emirates : , : Bentham Science Publishers Ltd., , [2014] |
| Descrizione fisica | 1 online resource (211 p.) |
| Disciplina | 621.381522 |
| Collana | Frontiers in Electrical Engineering |
| Soggetto topico | Light emitting diodes |
| Soggetto genere / forma | Electronic books. |
| ISBN | 1-68108-120-2 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS; PREFACE ; LIST OF CONTRIBUTORS ; Introduction to Organic Light-Emitting Display Technologies ; INTRODUCTION; DEVELOPEMNT HISTORY OF OLEDS; BASIC PHYSICS OF OLEDS; Charge Carriers Injection; Charge Carriers Transportation ; Exciton Formation and Recombination ; Light Extraction from Devices ; FABRICATION AND CHARACTERIZATION OF OLEDS; APPLICATION OF OLEDS; Flat Panel Display; Solid-state Lighting; CONFLICT OF INTEREST; ACKNOWLEDGMENTS; REFERENCES; White Organic Light-Emitting Diodes for Display and Lighting Application ; WOLEDS FOR FULL COLOR DISPLAYS; WOLEDS FOR SOLID-STATE LIGHTING
APPROACHES TO WHITE LIGHT EMISSIONMulti-emissive Layers; Single-emissive Layer; WOLEDs with Fluorescent-phosphorescent Hybrid Emitters ; Tandem WOLEDs; Side by Side WOLEDs; Color Converted WOLEDs; Excimer/Exciplex WOLEDs; CONFLICT OF INTEREST; ACKNOWLEDGMENTS; REFERENCES; Light Outcoupling Technologies ; INTRODUCTION; LIGHT DISTRIBUTION IN OLED; EXTERNAL EXTRACTION STRUCTURES; Truncated Square-pyramid Luminaire; Scattering Film; Sand-blasting Substrate; Microlens Array; INTERNAL EXTRACTION STRUCTURES; Internal Scattering Layer; Photonic Crystal Structure; Metal Nanoparticles; CONCLUSION CONFLICT OF INTERESTACKNOWLEDGEMENTS; REFERENCES; Encapsulation Technologies ; INTRODUCTION; DARK SPOTS FORMATION MECHANISM; REQUIREMENT AND MEASUREMENT OF THE PERMEATION RATES; TRADITIONAL ENCAPSULATION TECHNOLOGY; THIN FILM ENCAPSUTION TECHNOLOGY; Si3N4/SiO2 Multilayer; Organic/Inorganic Multilayer; Atomic Layer Deposited (ALD) Film; CONCLUSION; CONFLICT OF INTEREST; ACKNOWLEDGEMENTS; REFERENCES; Thin Film Transistor Technology ; INTRODUCTION; HISTORY OF THIN FILM TRANSISTORS; HYDROGENATED AMORPHOUS SILICON TFT TECHNOLOGY; LOW TEMPERATURE POLYCRYSTALLLINE SILICON TFT TECHNOLOGY SPC TechnologyMIC Technology; ELA Technology; Bridge Grain Technology; METAL OXIDE SEMICONDUCTOR TFTS; Zinc Oxide TFTs; Amorphous Oxide Semiconductors and TFTs; Zinc Tin Oxide; Indium Gallium Oxide; Indium Gallium Zinc Oxide; GaN TFTs; MoS2 TFTs; SUMMARY ; CONFLICT OF INTEREST; ACKNOWLEDGEMENTS; REFERENCES; Driving Schemes and Design Considerations for AMOLED ; CIRCUIT FUNDAMENTALS ; Resistor-Capacitor Circuit; Charging and Discharging RC Circuit; Capacitive Parasitics; TFT CIRCUIT CONSIDERATIONS; Operational Region; Transistor as a Switch; Transistor as a Current Source or Current Drain On ResistanceApproximation of TFT with an equivalent resistance; DESIGN CONSIDERATIONS FOR ACTIVE-MATRIX BACKPLANE; Brightness; Display Timing; Pixel Storage Capacitance; Design Expression; TFT CIRCUIT DESIGN TECHNIQUES; Bootstrap Circuit; CIRCUIT COMPENSATION AND LAYOUT DESIGN; CHALLENGE IN AMOLED DISPLAYS; Aging of OLED and TFT ; Threshold Voltage Shift; 2T1C Pixel Configuration; THRESHOLD VOLTAGE COMPENSATED AMOLED PIXEL; 3T1C Pixel Configuration; 4T1C Pixel Configuration; 5T2C Pixel Configuration; 6T1C Pixel Configuration; 6T1C Pixel Configuration with biased discharge method CONFLICT OF INTEREST |
| Record Nr. | UNINA-9910460876403321 |
| Sharjah, United Arab Emirates : , : Bentham Science Publishers Ltd., , [2014] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Active-matrix organic light-emitting display technologies / / by Shuming Chen [and four others]
| Active-matrix organic light-emitting display technologies / / by Shuming Chen [and four others] |
| Pubbl/distr/stampa | Sharjah, United Arab Emirates : , : Bentham Science Publishers Ltd., , [2014] |
| Descrizione fisica | 1 online resource (211 p.) |
| Disciplina | 621.381522 |
| Collana | Frontiers in Electrical Engineering |
| Soggetto topico | Light emitting diodes |
| ISBN | 1-68108-120-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS; PREFACE ; LIST OF CONTRIBUTORS ; Introduction to Organic Light-Emitting Display Technologies ; INTRODUCTION; DEVELOPEMNT HISTORY OF OLEDS; BASIC PHYSICS OF OLEDS; Charge Carriers Injection; Charge Carriers Transportation ; Exciton Formation and Recombination ; Light Extraction from Devices ; FABRICATION AND CHARACTERIZATION OF OLEDS; APPLICATION OF OLEDS; Flat Panel Display; Solid-state Lighting; CONFLICT OF INTEREST; ACKNOWLEDGMENTS; REFERENCES; White Organic Light-Emitting Diodes for Display and Lighting Application ; WOLEDS FOR FULL COLOR DISPLAYS; WOLEDS FOR SOLID-STATE LIGHTING
APPROACHES TO WHITE LIGHT EMISSIONMulti-emissive Layers; Single-emissive Layer; WOLEDs with Fluorescent-phosphorescent Hybrid Emitters ; Tandem WOLEDs; Side by Side WOLEDs; Color Converted WOLEDs; Excimer/Exciplex WOLEDs; CONFLICT OF INTEREST; ACKNOWLEDGMENTS; REFERENCES; Light Outcoupling Technologies ; INTRODUCTION; LIGHT DISTRIBUTION IN OLED; EXTERNAL EXTRACTION STRUCTURES; Truncated Square-pyramid Luminaire; Scattering Film; Sand-blasting Substrate; Microlens Array; INTERNAL EXTRACTION STRUCTURES; Internal Scattering Layer; Photonic Crystal Structure; Metal Nanoparticles; CONCLUSION CONFLICT OF INTERESTACKNOWLEDGEMENTS; REFERENCES; Encapsulation Technologies ; INTRODUCTION; DARK SPOTS FORMATION MECHANISM; REQUIREMENT AND MEASUREMENT OF THE PERMEATION RATES; TRADITIONAL ENCAPSULATION TECHNOLOGY; THIN FILM ENCAPSUTION TECHNOLOGY; Si3N4/SiO2 Multilayer; Organic/Inorganic Multilayer; Atomic Layer Deposited (ALD) Film; CONCLUSION; CONFLICT OF INTEREST; ACKNOWLEDGEMENTS; REFERENCES; Thin Film Transistor Technology ; INTRODUCTION; HISTORY OF THIN FILM TRANSISTORS; HYDROGENATED AMORPHOUS SILICON TFT TECHNOLOGY; LOW TEMPERATURE POLYCRYSTALLLINE SILICON TFT TECHNOLOGY SPC TechnologyMIC Technology; ELA Technology; Bridge Grain Technology; METAL OXIDE SEMICONDUCTOR TFTS; Zinc Oxide TFTs; Amorphous Oxide Semiconductors and TFTs; Zinc Tin Oxide; Indium Gallium Oxide; Indium Gallium Zinc Oxide; GaN TFTs; MoS2 TFTs; SUMMARY ; CONFLICT OF INTEREST; ACKNOWLEDGEMENTS; REFERENCES; Driving Schemes and Design Considerations for AMOLED ; CIRCUIT FUNDAMENTALS ; Resistor-Capacitor Circuit; Charging and Discharging RC Circuit; Capacitive Parasitics; TFT CIRCUIT CONSIDERATIONS; Operational Region; Transistor as a Switch; Transistor as a Current Source or Current Drain On ResistanceApproximation of TFT with an equivalent resistance; DESIGN CONSIDERATIONS FOR ACTIVE-MATRIX BACKPLANE; Brightness; Display Timing; Pixel Storage Capacitance; Design Expression; TFT CIRCUIT DESIGN TECHNIQUES; Bootstrap Circuit; CIRCUIT COMPENSATION AND LAYOUT DESIGN; CHALLENGE IN AMOLED DISPLAYS; Aging of OLED and TFT ; Threshold Voltage Shift; 2T1C Pixel Configuration; THRESHOLD VOLTAGE COMPENSATED AMOLED PIXEL; 3T1C Pixel Configuration; 4T1C Pixel Configuration; 5T2C Pixel Configuration; 6T1C Pixel Configuration; 6T1C Pixel Configuration with biased discharge method CONFLICT OF INTEREST |
| Record Nr. | UNINA-9910797786803321 |
| Sharjah, United Arab Emirates : , : Bentham Science Publishers Ltd., , [2014] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Active-matrix organic light-emitting display technologies / / by Shuming Chen [and four others]
| Active-matrix organic light-emitting display technologies / / by Shuming Chen [and four others] |
| Pubbl/distr/stampa | Sharjah, United Arab Emirates : , : Bentham Science Publishers Ltd., , [2014] |
| Descrizione fisica | 1 online resource (211 p.) |
| Disciplina | 621.381522 |
| Collana | Frontiers in Electrical Engineering |
| Soggetto topico | Light emitting diodes |
| ISBN | 1-68108-120-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS; PREFACE ; LIST OF CONTRIBUTORS ; Introduction to Organic Light-Emitting Display Technologies ; INTRODUCTION; DEVELOPEMNT HISTORY OF OLEDS; BASIC PHYSICS OF OLEDS; Charge Carriers Injection; Charge Carriers Transportation ; Exciton Formation and Recombination ; Light Extraction from Devices ; FABRICATION AND CHARACTERIZATION OF OLEDS; APPLICATION OF OLEDS; Flat Panel Display; Solid-state Lighting; CONFLICT OF INTEREST; ACKNOWLEDGMENTS; REFERENCES; White Organic Light-Emitting Diodes for Display and Lighting Application ; WOLEDS FOR FULL COLOR DISPLAYS; WOLEDS FOR SOLID-STATE LIGHTING
APPROACHES TO WHITE LIGHT EMISSIONMulti-emissive Layers; Single-emissive Layer; WOLEDs with Fluorescent-phosphorescent Hybrid Emitters ; Tandem WOLEDs; Side by Side WOLEDs; Color Converted WOLEDs; Excimer/Exciplex WOLEDs; CONFLICT OF INTEREST; ACKNOWLEDGMENTS; REFERENCES; Light Outcoupling Technologies ; INTRODUCTION; LIGHT DISTRIBUTION IN OLED; EXTERNAL EXTRACTION STRUCTURES; Truncated Square-pyramid Luminaire; Scattering Film; Sand-blasting Substrate; Microlens Array; INTERNAL EXTRACTION STRUCTURES; Internal Scattering Layer; Photonic Crystal Structure; Metal Nanoparticles; CONCLUSION CONFLICT OF INTERESTACKNOWLEDGEMENTS; REFERENCES; Encapsulation Technologies ; INTRODUCTION; DARK SPOTS FORMATION MECHANISM; REQUIREMENT AND MEASUREMENT OF THE PERMEATION RATES; TRADITIONAL ENCAPSULATION TECHNOLOGY; THIN FILM ENCAPSUTION TECHNOLOGY; Si3N4/SiO2 Multilayer; Organic/Inorganic Multilayer; Atomic Layer Deposited (ALD) Film; CONCLUSION; CONFLICT OF INTEREST; ACKNOWLEDGEMENTS; REFERENCES; Thin Film Transistor Technology ; INTRODUCTION; HISTORY OF THIN FILM TRANSISTORS; HYDROGENATED AMORPHOUS SILICON TFT TECHNOLOGY; LOW TEMPERATURE POLYCRYSTALLLINE SILICON TFT TECHNOLOGY SPC TechnologyMIC Technology; ELA Technology; Bridge Grain Technology; METAL OXIDE SEMICONDUCTOR TFTS; Zinc Oxide TFTs; Amorphous Oxide Semiconductors and TFTs; Zinc Tin Oxide; Indium Gallium Oxide; Indium Gallium Zinc Oxide; GaN TFTs; MoS2 TFTs; SUMMARY ; CONFLICT OF INTEREST; ACKNOWLEDGEMENTS; REFERENCES; Driving Schemes and Design Considerations for AMOLED ; CIRCUIT FUNDAMENTALS ; Resistor-Capacitor Circuit; Charging and Discharging RC Circuit; Capacitive Parasitics; TFT CIRCUIT CONSIDERATIONS; Operational Region; Transistor as a Switch; Transistor as a Current Source or Current Drain On ResistanceApproximation of TFT with an equivalent resistance; DESIGN CONSIDERATIONS FOR ACTIVE-MATRIX BACKPLANE; Brightness; Display Timing; Pixel Storage Capacitance; Design Expression; TFT CIRCUIT DESIGN TECHNIQUES; Bootstrap Circuit; CIRCUIT COMPENSATION AND LAYOUT DESIGN; CHALLENGE IN AMOLED DISPLAYS; Aging of OLED and TFT ; Threshold Voltage Shift; 2T1C Pixel Configuration; THRESHOLD VOLTAGE COMPENSATED AMOLED PIXEL; 3T1C Pixel Configuration; 4T1C Pixel Configuration; 5T2C Pixel Configuration; 6T1C Pixel Configuration; 6T1C Pixel Configuration with biased discharge method CONFLICT OF INTEREST |
| Record Nr. | UNINA-9910808185903321 |
| Sharjah, United Arab Emirates : , : Bentham Science Publishers Ltd., , [2014] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advances in photodiodes / / edited by Gian-Franco Dalla Betta
| Advances in photodiodes / / edited by Gian-Franco Dalla Betta |
| Autore | Betta G. F (Gian-Franco Dalla) |
| Pubbl/distr/stampa | IntechOpen, 2011 |
| Descrizione fisica | 1 online resource (480 pages) : illustrations |
| Disciplina | 621.381522 |
| Soggetto topico | Photodiodes |
| Soggetto non controllato |
Engineering
Physical Sciences Engineering and Technology Electrical and Electronic Engineering Optical Engineering |
| ISBN | 953-51-4512-6 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910138266003321 |
Betta G. F (Gian-Franco Dalla)
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| IntechOpen, 2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Air-Stable Inverted Organic Light-Emitting Diodes [[electronic resource] /] / by Katsuyuki Morii, Hirohiko Fukagawa
| Air-Stable Inverted Organic Light-Emitting Diodes [[electronic resource] /] / by Katsuyuki Morii, Hirohiko Fukagawa |
| Autore | Morii Katsuyuki |
| Edizione | [1st ed. 2020.] |
| Pubbl/distr/stampa | Cham : , : Springer International Publishing : , : Imprint : Springer, , 2020 |
| Descrizione fisica | 1 online resource (55 pages) |
| Disciplina | 621.381522 |
| Collana | Display Science and Technology |
| Soggetto topico |
Lasers
Photonics Microwaves Optical engineering Optical materials Electronic materials Semiconductors Optics, Lasers, Photonics, Optical Devices Microwaves, RF and Optical Engineering Optical and Electronic Materials |
| ISBN | 3-030-18514-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | 1: Air stability for organic light-emitting diodes (Katsuyuki Morii) -- 2: Hybrid organic-inorganic light-emitting diode (Katsuyuki Morii) -- 3: Interfacial engineering by introducing an interlayer (Hirohiko Fukagawa) -- 4: Carrier Injection Mechanism (Hirohiko Fukagawa). |
| Record Nr. | UNISA-996418175103316 |
|
Morii Katsuyuki
|
||
| Cham : , : Springer International Publishing : , : Imprint : Springer, , 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
Air-Stable Inverted Organic Light-Emitting Diodes / / by Katsuyuki Morii, Hirohiko Fukagawa
| Air-Stable Inverted Organic Light-Emitting Diodes / / by Katsuyuki Morii, Hirohiko Fukagawa |
| Autore | Morii Katsuyuki |
| Edizione | [1st ed. 2020.] |
| Pubbl/distr/stampa | Cham : , : Springer International Publishing : , : Imprint : Springer, , 2020 |
| Descrizione fisica | 1 online resource (55 pages) |
| Disciplina | 621.381522 |
| Collana | Display Science and Technology |
| Soggetto topico |
Lasers
Photonics Microwaves Optical engineering Optical materials Electronics - Materials Semiconductors Optics, Lasers, Photonics, Optical Devices Microwaves, RF and Optical Engineering Optical and Electronic Materials |
| ISBN | 3-030-18514-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | 1: Air stability for organic light-emitting diodes (Katsuyuki Morii) -- 2: Hybrid organic-inorganic light-emitting diode (Katsuyuki Morii) -- 3: Interfacial engineering by introducing an interlayer (Hirohiko Fukagawa) -- 4: Carrier Injection Mechanism (Hirohiko Fukagawa). |
| Record Nr. | UNINA-9910409998803321 |
|
Morii Katsuyuki
|
||
| Cham : , : Springer International Publishing : , : Imprint : Springer, , 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
ANSI N42.28-2002 : American National Standard for Calibration of Germanium Detectors for In-Situ Gamma-Ray Measurements / / Institute of Electrical and Electronics Engineers (IEEE)
| ANSI N42.28-2002 : American National Standard for Calibration of Germanium Detectors for In-Situ Gamma-Ray Measurements / / Institute of Electrical and Electronics Engineers (IEEE) |
| Pubbl/distr/stampa | New York : , : Institute of Electrical and Electronics Engineers (IEEE), , 2004 |
| Descrizione fisica | 1 online resource (vi, 37 pages) : illustrations |
| Disciplina | 621.381522 |
| Soggetto topico |
Gamma rays - Measurement - Standards
Germanium diodes - Standards |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | ANSI N42.28-2002: American National Standard for Calibration of Germanium Detectors for In-Situ Gamma-Ray Measurements |
| Record Nr. | UNISA-996279884503316 |
| New York : , : Institute of Electrical and Electronics Engineers (IEEE), , 2004 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
ANSI N42.28-2002 : American National Standard for Calibration of Germanium Detectors for In-Situ Gamma-Ray Measurements / / Institute of Electrical and Electronics Engineers (IEEE)
| ANSI N42.28-2002 : American National Standard for Calibration of Germanium Detectors for In-Situ Gamma-Ray Measurements / / Institute of Electrical and Electronics Engineers (IEEE) |
| Pubbl/distr/stampa | New York : , : Institute of Electrical and Electronics Engineers (IEEE), , 2004 |
| Descrizione fisica | 1 online resource (vi, 37 pages) : illustrations |
| Disciplina | 621.381522 |
| Soggetto topico |
Gamma rays - Measurement - Standards
Germanium diodes - Standards |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | ANSI N42.28-2002: American National Standard for Calibration of Germanium Detectors for In-Situ Gamma-Ray Measurements |
| Record Nr. | UNINA-9910147245403321 |
| New York : , : Institute of Electrical and Electronics Engineers (IEEE), , 2004 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
ANSI Std N42.12-1980 : American National Standard Calibration and Usage of Sodium Iodide Detector Systems / / Institute of Electrical and Electronics Engineers
| ANSI Std N42.12-1980 : American National Standard Calibration and Usage of Sodium Iodide Detector Systems / / Institute of Electrical and Electronics Engineers |
| Pubbl/distr/stampa | New York, New York : , : IEEE, , 1980 |
| Descrizione fisica | 1 online resource (11 pages) |
| Disciplina | 621.381522 |
| Soggetto topico |
Germanium diodes - Standards
Gamma rays - Measurement - Standards |
| ISBN | 0-7381-4163-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | ANSI Std N42.12-1980: American National Standard Calibration and Usage of Sodium Iodide Detector Systems |
| Record Nr. | UNINA-9910135781503321 |
| New York, New York : , : IEEE, , 1980 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
ANSI Std N42.12-1980 : American National Standard Calibration and Usage of Sodium Iodide Detector Systems / / Institute of Electrical and Electronics Engineers
| ANSI Std N42.12-1980 : American National Standard Calibration and Usage of Sodium Iodide Detector Systems / / Institute of Electrical and Electronics Engineers |
| Pubbl/distr/stampa | New York, New York : , : IEEE, , 1980 |
| Descrizione fisica | 1 online resource (11 pages) |
| Disciplina | 621.381522 |
| Soggetto topico |
Germanium diodes - Standards
Gamma rays - Measurement - Standards |
| ISBN | 0-7381-4163-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | ANSI Std N42.12-1980: American National Standard Calibration and Usage of Sodium Iodide Detector Systems |
| Record Nr. | UNISA-996279879703316 |
| New York, New York : , : IEEE, , 1980 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
