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Bismuth : Fundamentals and Optoelectronic Applications / / edited by Yanhua Luo, Jianxiang Wen and Jianzhong Zhang
Bismuth : Fundamentals and Optoelectronic Applications / / edited by Yanhua Luo, Jianxiang Wen and Jianzhong Zhang
Pubbl/distr/stampa London, United Kingdom : , : IntechOpen, , 2020
Descrizione fisica 1 online resource (xiv, 151 pages) : illustrations
Disciplina 620.1895
Soggetto topico Bismuth
ISBN 1-83968-243-4
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti Bismuth
Record Nr. UNINA-9910431356403321
London, United Kingdom : , : IntechOpen, , 2020
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Bismuth : Fundamentals and Optoelectronic Applications / / edited by Yanhua Luo, Jianxiang Wen and Jianzhong Zhang
Bismuth : Fundamentals and Optoelectronic Applications / / edited by Yanhua Luo, Jianxiang Wen and Jianzhong Zhang
Pubbl/distr/stampa London : , : IntechOpen, , 2020
Descrizione fisica 1 online resource (xii, 151 pages) : illustrations
Disciplina 620.1895
Soggetto topico Bismuth
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti Bismuth
Record Nr. UNINA-9910688327303321
London : , : IntechOpen, , 2020
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Bismuth : advanced applications and defects characterization / / Ying Zhou, Fan Dong, Shengming Jin, editors
Bismuth : advanced applications and defects characterization / / Ying Zhou, Fan Dong, Shengming Jin, editors
Pubbl/distr/stampa [Place of publication not identified] : , : IntechOpen, , [2018]
Descrizione fisica 1 online resource (230 pages) : illustrations
Disciplina 620.1895
Soggetto topico Bismuth
ISBN 1-83881-528-7
1-78923-263-5
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti Bismuth
Record Nr. UNINA-9910317812003321
[Place of publication not identified] : , : IntechOpen, , [2018]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Bismuth-containing compounds / / Handong Li, Zhiming M. Wang, editors
Bismuth-containing compounds / / Handong Li, Zhiming M. Wang, editors
Edizione [1st ed. 2013.]
Pubbl/distr/stampa New York : , : Springer, , 2013
Descrizione fisica 1 online resource (xii, 379 pages) : illustrations (some color)
Disciplina 620.1895
Collana Springer Series in Materials Science
Soggetto topico Bismuth compounds
ISBN 1-4614-8121-X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Preface -- Chapter 1: Dilute Bismides for Mid-IR Applications -- Chapter 2: Bismide-based photonic devices for near- and mid-infrared applications -- Chapter 3: Theory of the electronic structure of dilute bismide alloys: Tight-binding and k_p models -- Chapter 4: Dilute bismuthides on an InP platform -- Chapter 5: Atmospheric-pressure metalorganic vapor phase epitaxy of GaAsBi alloy on GaAs substrate -- Chapter 6: Group III-V bismide materials grown by liquid phase epitaxy -- Chapter 7: Spectroscopic Ellipsometry of AP-MOVPE grown GaAs1-xBix dilute alloys -- Chapter 8: Effect of bismuth alloying on the transport properties of the dilute bismide alloy, GaAs1-xBix -- Chapter 9: Localized states in GaAsBi and GaAs/GaAsBi heterostructures -- Chapter 10: Unusual Bi-containing surface layers of III-V compound semiconductors -- Chapter 11: MBE growth of thin hexagonal films Bi2Te3, Bi2Se3, and their alloys on cubic GaAs (001) substrates -- Chapter 12: Vapor Phase Deposition Synthesis of Bismuth-Based Topological Insulator Nanoplates and Their Electrostatic Properties -- Chapter 13: Electronic and optical properties of domain walls and phase boundaries in bismuth ferrite -- Chapter 14: Syntheses and Properties of Some Bi-Containing Compounds with Noncentrosymmetric Structure -- Chapter 15: Bismuth(V)-containing semiconductor compounds and applications in heterogeneous photocatalysis -- Index.
Record Nr. UNINA-9910437802503321
New York : , : Springer, , 2013
Materiale a stampa
Lo trovi qui: Univ. Federico II
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