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Advanced piezoelectric materials : science and technology / / edited by Kenji Uchino
| Advanced piezoelectric materials : science and technology / / edited by Kenji Uchino |
| Pubbl/distr/stampa | Oxford, : Woodhead Pub., 2010 |
| Descrizione fisica | 1 online resource (697 p.) |
| Disciplina | 620.112972 |
| Altri autori (Persone) | UchinoKenji |
| Collana | Woodhead Publishing Series in Electronic and Optical Materials |
| Soggetto topico | Piezoelectric materials |
| ISBN | 1-84569-975-0 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | pt. I. Piezoelectric materials -- pt. II. Preparation methods and applications -- pt. III. Application oriented materials development. |
| Record Nr. | UNINA-9911004815703321 |
| Oxford, : Woodhead Pub., 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advances in semiconducting materials / / edited by S. Velumani and René Asomoza
| Advances in semiconducting materials / / edited by S. Velumani and René Asomoza |
| Pubbl/distr/stampa | Stafa-Zurich, Switzerland ; ; Enfield, New Hampshire : , : Trans Tech Publications, , [2009] |
| Descrizione fisica | 1 online resource (195 p.) |
| Disciplina | 620.112972 |
| Altri autori (Persone) |
AsomozaRené
VelumaniS |
| Collana | Advanced materials research |
| Soggetto topico | Semiconductors - Materials |
| Soggetto genere / forma | Electronic books. |
| ISBN | 3-03813-302-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Advances in Semiconducting Materials; Preface; Table of Contents; Internal Deterioration of Mortars in Freeze-Thawing: Non-Destructive Evaluation by Means of Electrical Impedance; A New Measuring System for Determining the Magnetic Viscosity in Permanent Magnets; Microstructure Formation of Al-Fe-Mn-Si Aluminides by Pressure-Assisted Reactive Sintering of Elemental Powder Mixtures; Crack Disappearance by High-Temperature Oxidation of Alumina Toughened by Ni Nano-Particles; Microstructural Characterization of Electro-Deposited CdSe Thin Films
Effect of pH on Composition, Structure and Magnetic Properties of Electrodeposited Co-Ni AlloysPreparation and Microstructural Studies of Electrodeposited FeSe Thin Films; Electrochemical Deposition and Characterization of Cd-Fe-Se Thin Films; Structural and Optical Studies of Hot Wall Vacuum Evaporated CdTeSn Thin Films; Nanocrystalline Sm0.5Y0.5Co5 Alloys with Enhanced Magnetic Properties; Electronic Structure of YFe2 by EELS and Ab Initio Calculations; Borides Precipitation in the FeAl40 Intermetallic Compound Produced by Atomization-Deposition Process Structural Transformations of Boron Nitride Powders Obtained by Mechanical Milling ProcessImpedance Response of Franklinite Films to Humidity and Propane; Friction Stir Linear Welding of an Aluminum Alloy; Annealing Effect on Microstructure and Coercivity of YCo5 Nanoparticles Obtained by Mechanical Milling; Joining of WC-Co to Ni by Direct Diffusion Bonding; Effect of Li on the Corrosion Behavior of Al-Cu/SiCp Composites; Magnetic and Electronic Properties of the Compound Y(Co,Fe)5 Calculated by the Augmented Spherical Wave Method Comparative Study of Corrosion in Physiological Serum of Ceramic Coatings Applied on 316L Stainless Steel SubstrateCharacterization of Galvannealed HSLA Steels; Characterization of Friction Stir Welding on Aluminum; Characterization of Magnetic Particles Using a Wavelet Function; Keywords Index; Authors Index |
| Record Nr. | UNINA-9910462880803321 |
| Stafa-Zurich, Switzerland ; ; Enfield, New Hampshire : , : Trans Tech Publications, , [2009] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advances in semiconducting materials / / edited by S. Velumani and René Asomoza
| Advances in semiconducting materials / / edited by S. Velumani and René Asomoza |
| Pubbl/distr/stampa | Stafa-Zurich, Switzerland ; ; Enfield, New Hampshire : , : Trans Tech Publications, , [2009] |
| Descrizione fisica | 1 online resource (195 p.) |
| Disciplina | 620.112972 |
| Altri autori (Persone) |
AsomozaRené
VelumaniS |
| Collana | Advanced materials research |
| Soggetto topico | Semiconductors - Materials |
| Soggetto non controllato | Semiconducting materials |
| ISBN | 3-03813-302-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Advances in Semiconducting Materials; Preface; Table of Contents; Internal Deterioration of Mortars in Freeze-Thawing: Non-Destructive Evaluation by Means of Electrical Impedance; A New Measuring System for Determining the Magnetic Viscosity in Permanent Magnets; Microstructure Formation of Al-Fe-Mn-Si Aluminides by Pressure-Assisted Reactive Sintering of Elemental Powder Mixtures; Crack Disappearance by High-Temperature Oxidation of Alumina Toughened by Ni Nano-Particles; Microstructural Characterization of Electro-Deposited CdSe Thin Films
Effect of pH on Composition, Structure and Magnetic Properties of Electrodeposited Co-Ni AlloysPreparation and Microstructural Studies of Electrodeposited FeSe Thin Films; Electrochemical Deposition and Characterization of Cd-Fe-Se Thin Films; Structural and Optical Studies of Hot Wall Vacuum Evaporated CdTeSn Thin Films; Nanocrystalline Sm0.5Y0.5Co5 Alloys with Enhanced Magnetic Properties; Electronic Structure of YFe2 by EELS and Ab Initio Calculations; Borides Precipitation in the FeAl40 Intermetallic Compound Produced by Atomization-Deposition Process Structural Transformations of Boron Nitride Powders Obtained by Mechanical Milling ProcessImpedance Response of Franklinite Films to Humidity and Propane; Friction Stir Linear Welding of an Aluminum Alloy; Annealing Effect on Microstructure and Coercivity of YCo5 Nanoparticles Obtained by Mechanical Milling; Joining of WC-Co to Ni by Direct Diffusion Bonding; Effect of Li on the Corrosion Behavior of Al-Cu/SiCp Composites; Magnetic and Electronic Properties of the Compound Y(Co,Fe)5 Calculated by the Augmented Spherical Wave Method Comparative Study of Corrosion in Physiological Serum of Ceramic Coatings Applied on 316L Stainless Steel SubstrateCharacterization of Galvannealed HSLA Steels; Characterization of Friction Stir Welding on Aluminum; Characterization of Magnetic Particles Using a Wavelet Function; Keywords Index; Authors Index |
| Record Nr. | UNINA-9910786212703321 |
| Stafa-Zurich, Switzerland ; ; Enfield, New Hampshire : , : Trans Tech Publications, , [2009] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advances in semiconducting materials / / edited by S. Velumani and René Asomoza
| Advances in semiconducting materials / / edited by S. Velumani and René Asomoza |
| Pubbl/distr/stampa | Stafa-Zurich, Switzerland ; ; Enfield, New Hampshire : , : Trans Tech Publications, , [2009] |
| Descrizione fisica | 1 online resource (195 p.) |
| Disciplina | 620.112972 |
| Altri autori (Persone) |
AsomozaRené
VelumaniS |
| Collana | Advanced materials research |
| Soggetto topico | Semiconductors - Materials |
| Soggetto non controllato | Semiconducting materials |
| ISBN | 3-03813-302-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Advances in Semiconducting Materials; Preface; Table of Contents; Internal Deterioration of Mortars in Freeze-Thawing: Non-Destructive Evaluation by Means of Electrical Impedance; A New Measuring System for Determining the Magnetic Viscosity in Permanent Magnets; Microstructure Formation of Al-Fe-Mn-Si Aluminides by Pressure-Assisted Reactive Sintering of Elemental Powder Mixtures; Crack Disappearance by High-Temperature Oxidation of Alumina Toughened by Ni Nano-Particles; Microstructural Characterization of Electro-Deposited CdSe Thin Films
Effect of pH on Composition, Structure and Magnetic Properties of Electrodeposited Co-Ni AlloysPreparation and Microstructural Studies of Electrodeposited FeSe Thin Films; Electrochemical Deposition and Characterization of Cd-Fe-Se Thin Films; Structural and Optical Studies of Hot Wall Vacuum Evaporated CdTeSn Thin Films; Nanocrystalline Sm0.5Y0.5Co5 Alloys with Enhanced Magnetic Properties; Electronic Structure of YFe2 by EELS and Ab Initio Calculations; Borides Precipitation in the FeAl40 Intermetallic Compound Produced by Atomization-Deposition Process Structural Transformations of Boron Nitride Powders Obtained by Mechanical Milling ProcessImpedance Response of Franklinite Films to Humidity and Propane; Friction Stir Linear Welding of an Aluminum Alloy; Annealing Effect on Microstructure and Coercivity of YCo5 Nanoparticles Obtained by Mechanical Milling; Joining of WC-Co to Ni by Direct Diffusion Bonding; Effect of Li on the Corrosion Behavior of Al-Cu/SiCp Composites; Magnetic and Electronic Properties of the Compound Y(Co,Fe)5 Calculated by the Augmented Spherical Wave Method Comparative Study of Corrosion in Physiological Serum of Ceramic Coatings Applied on 316L Stainless Steel SubstrateCharacterization of Galvannealed HSLA Steels; Characterization of Friction Stir Welding on Aluminum; Characterization of Magnetic Particles Using a Wavelet Function; Keywords Index; Authors Index |
| Record Nr. | UNINA-9910814657703321 |
| Stafa-Zurich, Switzerland ; ; Enfield, New Hampshire : , : Trans Tech Publications, , [2009] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011. Miyazaki, Japan / / edited by Hiroshi Yamada-Kaneta and Akira Sakai
| Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011. Miyazaki, Japan / / edited by Hiroshi Yamada-Kaneta and Akira Sakai |
| Pubbl/distr/stampa | Durnten-Zurich ; ; Enfield, NH : , : Trans Tech Publications, , [2012] |
| Descrizione fisica | 1 online resource (300 p.) |
| Disciplina | 620.112972 |
| Altri autori (Persone) |
Yamada-KanetaHiroshi
SakaiAkira (Professor of engineering science) |
| Collana | Materials science forum |
| Soggetto topico |
Semiconductors - Defects
Physics |
| Soggetto genere / forma | Electronic books. |
| ISBN | 3-03813-856-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Defects-Recognition, Imaging and Physics in Semiconductors XIV; Preface, Message and Committee; Table of Contents; Chapter 1: Defects in SiC; Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography; Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography; Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy; Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon CarbideElectron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing; Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings; Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method; Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC; Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiС under Electron Beam IrradiationDensity of Etch Pits on C-Face 4H-SiC Surface Produced by ClF3 Gas; Defect Related Leakage Current Components in SiC Schottky Barrier Diode; Rapid Terahertz Imaging of Carrier Density of 3C-SiC; Chapter 2: Nitride Materials and Devices; Cathodoluminescence Study of Ammonothermal GaN Crystals; The Effect of the Indenter Orientation on the Formation of Dislocations and Cracks in (0001) GaN Bulk Crystals; Defect Propagation from 3C-SiC to III-Nitride Characterization of Dislocations in GaN Thin Film and GaN/AlN MultilayerMicroscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs; Chapter 3: III-V Compounds and Devices; Distribution of Misfit Dislocations at the InGaAs/GaAs(001) Interface Observed by Monochromatic X-Ray Topography; Effects of in Content on Anisotropies in Strain Relaxation Processes of InGaAs/GaAs (001) Measured by Real-Time Three-Dimensional Reciprocal Space Mapping; Nitrogen Related Deep Levels in GaAsN Films Investigated by a Temperature Dependence of Piezoelectric Photothermal Signal Intermixing in InP-Based Quantum Well Photonic Structures Induced by the Dry-Etching Process: A Spectral Imaging Cathodoluminescence StudyDefect Propagation in Broad-Area Diode Lasers; Kinetics of Defect Propagation during the Catastrophic Optical Damage (COD) in Broad-Area Diode Lasers; Nondestructive Measurement of Carrier Density in GaAs Using Relative Reflectivity of Two Terahertz Waves; Chapter 4: Photovoltaics: From Material to Module; Lock-In Thermography and Related Topics in Photovoltaic Research EBIC Study on Metal Contamination at Intra Grain Defects in Multicrystalline Silicon for Solar Cells |
| Record Nr. | UNINA-9910462785103321 |
| Durnten-Zurich ; ; Enfield, NH : , : Trans Tech Publications, , [2012] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011. Miyazaki, Japan / / edited by Hiroshi Yamada-Kaneta and Akira Sakai
| Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011. Miyazaki, Japan / / edited by Hiroshi Yamada-Kaneta and Akira Sakai |
| Pubbl/distr/stampa | Durnten-Zurich ; ; Enfield, NH : , : Trans Tech Publications, , [2012] |
| Descrizione fisica | 1 online resource (300 p.) |
| Disciplina | 620.112972 |
| Altri autori (Persone) |
Yamada-KanetaHiroshi
SakaiAkira (Professor of engineering science) |
| Collana | Materials science forum |
| Soggetto topico |
Semiconductors - Defects
Physics |
| ISBN | 3-03813-856-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Defects-Recognition, Imaging and Physics in Semiconductors XIV; Preface, Message and Committee; Table of Contents; Chapter 1: Defects in SiC; Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography; Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography; Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy; Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon CarbideElectron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing; Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings; Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method; Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC; Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiС under Electron Beam IrradiationDensity of Etch Pits on C-Face 4H-SiC Surface Produced by ClF3 Gas; Defect Related Leakage Current Components in SiC Schottky Barrier Diode; Rapid Terahertz Imaging of Carrier Density of 3C-SiC; Chapter 2: Nitride Materials and Devices; Cathodoluminescence Study of Ammonothermal GaN Crystals; The Effect of the Indenter Orientation on the Formation of Dislocations and Cracks in (0001) GaN Bulk Crystals; Defect Propagation from 3C-SiC to III-Nitride Characterization of Dislocations in GaN Thin Film and GaN/AlN MultilayerMicroscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs; Chapter 3: III-V Compounds and Devices; Distribution of Misfit Dislocations at the InGaAs/GaAs(001) Interface Observed by Monochromatic X-Ray Topography; Effects of in Content on Anisotropies in Strain Relaxation Processes of InGaAs/GaAs (001) Measured by Real-Time Three-Dimensional Reciprocal Space Mapping; Nitrogen Related Deep Levels in GaAsN Films Investigated by a Temperature Dependence of Piezoelectric Photothermal Signal Intermixing in InP-Based Quantum Well Photonic Structures Induced by the Dry-Etching Process: A Spectral Imaging Cathodoluminescence StudyDefect Propagation in Broad-Area Diode Lasers; Kinetics of Defect Propagation during the Catastrophic Optical Damage (COD) in Broad-Area Diode Lasers; Nondestructive Measurement of Carrier Density in GaAs Using Relative Reflectivity of Two Terahertz Waves; Chapter 4: Photovoltaics: From Material to Module; Lock-In Thermography and Related Topics in Photovoltaic Research EBIC Study on Metal Contamination at Intra Grain Defects in Multicrystalline Silicon for Solar Cells |
| Record Nr. | UNINA-9910786396903321 |
| Durnten-Zurich ; ; Enfield, NH : , : Trans Tech Publications, , [2012] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011. Miyazaki, Japan / / edited by Hiroshi Yamada-Kaneta and Akira Sakai
| Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011. Miyazaki, Japan / / edited by Hiroshi Yamada-Kaneta and Akira Sakai |
| Pubbl/distr/stampa | Durnten-Zurich ; ; Enfield, NH : , : Trans Tech Publications, , [2012] |
| Descrizione fisica | 1 online resource (300 p.) |
| Disciplina | 620.112972 |
| Altri autori (Persone) |
Yamada-KanetaHiroshi
SakaiAkira (Professor of engineering science) |
| Collana | Materials science forum |
| Soggetto topico |
Semiconductors - Defects
Physics |
| ISBN | 3-03813-856-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Defects-Recognition, Imaging and Physics in Semiconductors XIV; Preface, Message and Committee; Table of Contents; Chapter 1: Defects in SiC; Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography; Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography; Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy; Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon CarbideElectron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing; Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings; Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method; Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC; Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiС under Electron Beam IrradiationDensity of Etch Pits on C-Face 4H-SiC Surface Produced by ClF3 Gas; Defect Related Leakage Current Components in SiC Schottky Barrier Diode; Rapid Terahertz Imaging of Carrier Density of 3C-SiC; Chapter 2: Nitride Materials and Devices; Cathodoluminescence Study of Ammonothermal GaN Crystals; The Effect of the Indenter Orientation on the Formation of Dislocations and Cracks in (0001) GaN Bulk Crystals; Defect Propagation from 3C-SiC to III-Nitride Characterization of Dislocations in GaN Thin Film and GaN/AlN MultilayerMicroscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs; Chapter 3: III-V Compounds and Devices; Distribution of Misfit Dislocations at the InGaAs/GaAs(001) Interface Observed by Monochromatic X-Ray Topography; Effects of in Content on Anisotropies in Strain Relaxation Processes of InGaAs/GaAs (001) Measured by Real-Time Three-Dimensional Reciprocal Space Mapping; Nitrogen Related Deep Levels in GaAsN Films Investigated by a Temperature Dependence of Piezoelectric Photothermal Signal Intermixing in InP-Based Quantum Well Photonic Structures Induced by the Dry-Etching Process: A Spectral Imaging Cathodoluminescence StudyDefect Propagation in Broad-Area Diode Lasers; Kinetics of Defect Propagation during the Catastrophic Optical Damage (COD) in Broad-Area Diode Lasers; Nondestructive Measurement of Carrier Density in GaAs Using Relative Reflectivity of Two Terahertz Waves; Chapter 4: Photovoltaics: From Material to Module; Lock-In Thermography and Related Topics in Photovoltaic Research EBIC Study on Metal Contamination at Intra Grain Defects in Multicrystalline Silicon for Solar Cells |
| Record Nr. | UNINA-9910809272103321 |
| Durnten-Zurich ; ; Enfield, NH : , : Trans Tech Publications, , [2012] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Gettering and defect engineering in semiconductor technology XV : selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference (GADEST 2013), September 22-27, 2013, Oxford, UK / / edited by J.D. Murphy
| Gettering and defect engineering in semiconductor technology XV : selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference (GADEST 2013), September 22-27, 2013, Oxford, UK / / edited by J.D. Murphy |
| Pubbl/distr/stampa | Durnten-Zurich, Switzerland : , : Trans Tech Publications, , [2014] |
| Descrizione fisica | 1 online resource (513 p.) |
| Disciplina | 620.112972 |
| Altri autori (Persone) | MurphyJ. David |
| Collana | Solid state phenomena |
| Soggetto topico |
Semiconductors
Solid state electronics |
| Soggetto genere / forma | Electronic books. |
| ISBN | 3-03826-205-6 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Gettering and Defect Engineering in Semiconductor Technology XV; Preface, Committees, Invited Speakers and Sponsor; Table of Contents; I. Defect Engineering in Silicon Solar Cells; Light-Induced Boron-Oxygen Recombination Centres in Silicon: Understanding their Formation and Elimination; Iron Management in Multicrystalline Silicon through Predictive Simulation: Point Defects, Precipitates, and Structural Defect Interactions; External and Internal Gettering of Interstitial Iron in Silicon for Solar Cells; Precipitation of Interstitial Iron in Multicrystalline Silicon
Direct Observation of Carrier Trapping Processes on Fe Impurities in mc-Si Solar CellsOn the Trade-Off between Industrially Feasible Silicon Surface Preconditioning Prior to Interface Passivation and Iron Contaminant Removal Effectiveness; II. Structural and Production Issues in Cast Silicon Materials for Solar Cells; Defect Generation and Propagation in Mc-Si Ingots: Influence on the Performance of Solar Cells; Characterisation of Dislocation-Content in Multicrystalline-Silicon Wafers The Impact of Dislocation Structure on Impurity Decoration of Dislocation Clusters in Multicrystalline SiliconAnalysis of Inhomogeneous Dislocation Distribution in Multicrystalline Si; Properties of Strong Luminescence at 0.93 eV in Solar Grade Silicon; 10 cm Diameter Mono Cast Si Growth and its Characterization; Characterization of Residual Strain in Si Ingots Grown by the Seed-Cast Method; III. Characterisation of Silicon for Solar Cells; Overview and Latest Developments in Photoconductance Lifetime Measurements in Silicon Efficiency-Limiting Recombination in Multicrystalline Silicon Solar CellsPhotoluminescence Imaging of Silicon Bricks; Inline PL Inspection and Advanced Offline Evaluation of Passivation Defects, Charge and Interfaces; Transition Metal Precipitates in Mc Si: A New Detection Method Using 3D-FIB; A Comparison of EBIC, LBIC and XBIC Methods as Tools for Multicrystalline Si Characterization; IV. Intrinsic Point Defects in Silicon; Properties of Point Defects in Silicon: New Results after a Long-Time Debate; Fast and Slow Vacancies in Silicon Theoretical Study of the Impact of Stress on the Behavior of Intrinsic Point Defects in Large-Diameter Defect-Free Si CrystalsV. Light Impurities in Silicon-Based Materials; First Principle Study of the Diffusion of Oxygen and Oxygen Complexes in Si, SiGe Solid Solutions and Si Nanocrystals; The Trivacancy and Trivacancy-Oxygen Family of Defects in Silicon; Monoisotopic 28Si in Spin Resonance Spectroscopy of Electrons Localized on Shallow Donors; Light-Element Impurities and their Reactions in Multicrystalline Si; Isotope-Dependent Phonon Trapping at Defects in Semiconductors Formation of Single and Double Donor States of Trivacancy-Oxygen Complexes in P-Type Silicon |
| Record Nr. | UNINA-9910464874003321 |
| Durnten-Zurich, Switzerland : , : Trans Tech Publications, , [2014] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Gettering and defect engineering in semiconductor technology XV : selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference (GADEST 2013), September 22-27, 2013, Oxford, UK / / edited by J.D. Murphy
| Gettering and defect engineering in semiconductor technology XV : selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference (GADEST 2013), September 22-27, 2013, Oxford, UK / / edited by J.D. Murphy |
| Pubbl/distr/stampa | Durnten-Zurich, Switzerland : , : Trans Tech Publications, , [2014] |
| Descrizione fisica | 1 online resource (513 p.) |
| Disciplina | 620.112972 |
| Altri autori (Persone) | MurphyJ. David |
| Collana | Solid state phenomena |
| Soggetto topico |
Semiconductors
Solid state electronics |
| Soggetto non controllato |
Gettering
Defect engineering Semiconductor technology GADEST |
| ISBN | 3-03826-205-6 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Gettering and Defect Engineering in Semiconductor Technology XV; Preface, Committees, Invited Speakers and Sponsor; Table of Contents; I. Defect Engineering in Silicon Solar Cells; Light-Induced Boron-Oxygen Recombination Centres in Silicon: Understanding their Formation and Elimination; Iron Management in Multicrystalline Silicon through Predictive Simulation: Point Defects, Precipitates, and Structural Defect Interactions; External and Internal Gettering of Interstitial Iron in Silicon for Solar Cells; Precipitation of Interstitial Iron in Multicrystalline Silicon
Direct Observation of Carrier Trapping Processes on Fe Impurities in mc-Si Solar CellsOn the Trade-Off between Industrially Feasible Silicon Surface Preconditioning Prior to Interface Passivation and Iron Contaminant Removal Effectiveness; II. Structural and Production Issues in Cast Silicon Materials for Solar Cells; Defect Generation and Propagation in Mc-Si Ingots: Influence on the Performance of Solar Cells; Characterisation of Dislocation-Content in Multicrystalline-Silicon Wafers The Impact of Dislocation Structure on Impurity Decoration of Dislocation Clusters in Multicrystalline SiliconAnalysis of Inhomogeneous Dislocation Distribution in Multicrystalline Si; Properties of Strong Luminescence at 0.93 eV in Solar Grade Silicon; 10 cm Diameter Mono Cast Si Growth and its Characterization; Characterization of Residual Strain in Si Ingots Grown by the Seed-Cast Method; III. Characterisation of Silicon for Solar Cells; Overview and Latest Developments in Photoconductance Lifetime Measurements in Silicon Efficiency-Limiting Recombination in Multicrystalline Silicon Solar CellsPhotoluminescence Imaging of Silicon Bricks; Inline PL Inspection and Advanced Offline Evaluation of Passivation Defects, Charge and Interfaces; Transition Metal Precipitates in Mc Si: A New Detection Method Using 3D-FIB; A Comparison of EBIC, LBIC and XBIC Methods as Tools for Multicrystalline Si Characterization; IV. Intrinsic Point Defects in Silicon; Properties of Point Defects in Silicon: New Results after a Long-Time Debate; Fast and Slow Vacancies in Silicon Theoretical Study of the Impact of Stress on the Behavior of Intrinsic Point Defects in Large-Diameter Defect-Free Si CrystalsV. Light Impurities in Silicon-Based Materials; First Principle Study of the Diffusion of Oxygen and Oxygen Complexes in Si, SiGe Solid Solutions and Si Nanocrystals; The Trivacancy and Trivacancy-Oxygen Family of Defects in Silicon; Monoisotopic 28Si in Spin Resonance Spectroscopy of Electrons Localized on Shallow Donors; Light-Element Impurities and their Reactions in Multicrystalline Si; Isotope-Dependent Phonon Trapping at Defects in Semiconductors Formation of Single and Double Donor States of Trivacancy-Oxygen Complexes in P-Type Silicon |
| Record Nr. | UNINA-9910789178803321 |
| Durnten-Zurich, Switzerland : , : Trans Tech Publications, , [2014] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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