Info
- Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.
Advanced epitaxy for future electronics, optics, and quantum physics [[electronic resource] /] / by Arthur C. Gossard
| Advanced epitaxy for future electronics, optics, and quantum physics [[electronic resource] /] / by Arthur C. Gossard |
| Autore | Gossard A. C |
| Pubbl/distr/stampa | Washington, D.C., : National Academy Press, c2000 |
| Descrizione fisica | 1 online resource (19 p.) |
| Disciplina | 548/.5 |
| Collana |
International science lecture series
The compass series |
| Soggetto topico | Epitaxy |
| Soggetto genere / forma | Electronic books. |
| ISBN | 0-309-51287-5 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910456004403321 |
Gossard A. C
|
||
| Washington, D.C., : National Academy Press, c2000 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advanced epitaxy for future electronics, optics, and quantum physics [[electronic resource] /] / by Arthur C. Gossard
| Advanced epitaxy for future electronics, optics, and quantum physics [[electronic resource] /] / by Arthur C. Gossard |
| Autore | Gossard A. C |
| Pubbl/distr/stampa | Washington, D.C., : National Academy Press, c2000 |
| Descrizione fisica | 1 online resource (19 p.) |
| Disciplina | 548/.5 |
| Collana |
International science lecture series
The compass series |
| Soggetto topico | Epitaxy |
| ISBN |
0-309-18396-0
0-309-51287-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910778609003321 |
|
Gossard A. C
|
||
| Washington, D.C., : National Academy Press, c2000 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advanced epitaxy for future electronics, optics, and quantum physics / / by Arthur C. Gossard
| Advanced epitaxy for future electronics, optics, and quantum physics / / by Arthur C. Gossard |
| Autore | Gossard A. C |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Washington, D.C., : National Academy Press, c2000 |
| Descrizione fisica | 1 online resource (19 p.) |
| Disciplina | 548/.5 |
| Collana |
International science lecture series
The compass series |
| Soggetto topico | Epitaxy |
| ISBN |
0-309-18396-0
0-309-51287-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Front Matter -- Preface -- Abstract -- Advanced Epitaxy for Future Electronics, Optics, and Quantum Physics. |
| Record Nr. | UNINA-9910825656403321 |
|
Gossard A. C
|
||
| Washington, D.C., : National Academy Press, c2000 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
CRYSTAL growth / Edited by B.R. Pamplin
| CRYSTAL growth / Edited by B.R. Pamplin |
| Autore | Pamplin, Brian R. |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Oxford : Pergamon Press, 1975 |
| Descrizione fisica | XIV,672 p. ; 24 cm |
| Disciplina | 548/.5 |
| Collana | International series of monographs on the science of the solid state |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-990000349340403321 |
| Pamplin, Brian R. | ||
| Oxford : Pergamon Press, 1975 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Crystal growth for beginners [[electronic resource] ] : fundamentals of nucleation, crystal growth and epitaxy / / Ivan V Markov
| Crystal growth for beginners [[electronic resource] ] : fundamentals of nucleation, crystal growth and epitaxy / / Ivan V Markov |
| Autore | Markov Ivan V. <1941-> |
| Edizione | [2nd ed.] |
| Pubbl/distr/stampa | Singapore ; ; River Edge, N.J., : World Scientific, c2003 |
| Descrizione fisica | 1 online resource (xviii, 546 p. ) : ill |
| Disciplina | 548/.5 |
| Soggetto topico | Crystal growth |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-94791-1
9786611947910 981-279-689-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Crystal -- Ambient Phase Equilibrium - Nucleation - Crystal Growth - Epitaxial Growth |
| Record Nr. | UNINA-9910454088703321 |
|
Markov Ivan V. <1941->
|
||
| Singapore ; ; River Edge, N.J., : World Scientific, c2003 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Crystal growth for beginners [[electronic resource] ] : fundamentals of nucleation, crystal growth and epitaxy / / Ivan V Markov
| Crystal growth for beginners [[electronic resource] ] : fundamentals of nucleation, crystal growth and epitaxy / / Ivan V Markov |
| Autore | Markov Ivan V. <1941-> |
| Edizione | [2nd ed.] |
| Pubbl/distr/stampa | Singapore ; ; River Edge, N.J., : World Scientific, c2003 |
| Descrizione fisica | 1 online resource (xviii, 546 p. ) : ill |
| Disciplina | 548/.5 |
| Soggetto topico | Crystal growth |
| ISBN |
1-281-94791-1
9786611947910 981-279-689-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Crystal -- Ambient Phase Equilibrium - Nucleation - Crystal Growth - Epitaxial Growth |
| Record Nr. | UNINA-9910782282703321 |
|
Markov Ivan V. <1941->
|
||
| Singapore ; ; River Edge, N.J., : World Scientific, c2003 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Crystal growth for beginners : fundamentals of nucleation, crystal growth and epitaxy / / Ivan V Markov
| Crystal growth for beginners : fundamentals of nucleation, crystal growth and epitaxy / / Ivan V Markov |
| Autore | Markov Ivan V. <1941-> |
| Edizione | [2nd ed.] |
| Pubbl/distr/stampa | Singapore ; ; River Edge, N.J., : World Scientific, c2003 |
| Descrizione fisica | 1 online resource (xviii, 546 p. ) : ill |
| Disciplina | 548/.5 |
| Soggetto topico | Crystal growth |
| ISBN |
1-281-94791-1
9786611947910 981-279-689-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Crystal -- Ambient Phase Equilibrium - Nucleation - Crystal Growth - Epitaxial Growth |
| Record Nr. | UNINA-9910819878303321 |
|
Markov Ivan V. <1941->
|
||
| Singapore ; ; River Edge, N.J., : World Scientific, c2003 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Crystal growth processes based on capillarity [[electronic resource] ] : czochralski, floating zone, shaping and crucible techniques / / edited by Thierry Duffar
| Crystal growth processes based on capillarity [[electronic resource] ] : czochralski, floating zone, shaping and crucible techniques / / edited by Thierry Duffar |
| Pubbl/distr/stampa | Chichester, West Sussex ; ; Hoboken, N.J., : Wiley, 2010 |
| Descrizione fisica | 1 online resource (567 p.) |
| Disciplina |
548.5
548/.5 |
| Altri autori (Persone) | DuffarThierry |
| Soggetto topico |
Crystal growth
Crystallization |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-282-68431-0
9786612684319 1-4443-2023-8 1-4443-2021-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Crystal Growth Processes Based on Capillarity: Czochralski, Floating Zone,Shaping and Crucible Techniques; Contents; Preface; Introduction; Acknowledgements; Nomenclature; Contributors; 1: Basic Principles of Capillarity in Relation to Crystal Growth; 1.1 Definitions; 1.1.1 Characteristic Energies of Surfaces and Interfaces; 1.1.2 Capillary Pressure; 1.1.3 Surface Energy versus Surface Tension; 1.2 Contact Angles; 1.2.1 Thermodynamics; 1.2.2 Dynamics of Wetting; 1.2.3 Measurements of Contact Angle and Surface Tension by the Sessile Drop Technique
1.2.4 Selected Data for the Contact Angle for Systems of Interest for Crystal Growth1.3 Growth Angles; 1.3.1 Theory; 1.3.2 Measurements of Growth Angles: Methods and Values; 1.3.3 Application of the Growth Angle Condition in Simulations of Crystal Growth; 1.3.4 Summary; Acknowledgements; References; 2: The Possibility of Shape Stability in Capillary Crystal Growth and Practical Realization of Shaped Crystals; 2.1 Crucible-Free Crystal Growth - Capillary Shaping Techniques; 2.2 Dynamic Stability of Crystallization - the Basis of Shaped Crystal Growth by CST; 2.2.1 Lyapunov Equations 2.2.2 Capillary Problem - Common Approach2.2.3 Equation of Crystal Dimension Change Rate; 2.2.4 Equation of Crystallization Front Displacement Rate; 2.2.5 Stability Analysis in a System with Two Degrees of Freedom; 2.3 Stability Analysis and Growth of Shaped Crystals by the Cz Technique; 2.3.1 Capillary Problem; 2.3.2 Temperature Distribution in the Crystal-Melt System; 2.3.3 Stability Analysis and Shaped Crystal Growth; 2.3.4 Dynamic Stability Problem for the Kyropoulos Technique; 2.4 Stability Analysis and Growth of Shaped Crystals by the Verneuil Technique 2.4.1 Principal Schemes of Growth2.4.2 Theoretical Investigation; 2.4.3 Practical Results of the Theoretical Analysis; 2.4.4 Stability Analysis-Based Automation; 2.5 Stability Analysis and Growth of Shaped Crystals by the FZ Technique; 2.6 TPS Techniques: Capillary Shaping and Impurity Distribution; 2.6.1 Capillary Boundary Problem for TPS; 2.6.2 Stability Analysis; 2.6.3 Experimental Tests of the Capillary Shaping Theory Statements; 2.6.4 Impurity Distribution; 2.6.5 Definition of TPS; 2.6.6 Brief History of TPS; 2.7 Shaped Growth of Ge , Sapphire, Si, and Metals: a Brief Presentation 2.7.1 Ge2.7.2 Sapphire; 2.7.3 Si; 2.7.4 Metals and Alloys; 2.8 TPS Peculiarities; References; 3: Czochralski Process Dynamics and Control Design; 3.1 Introduction and Motivation; 3.1.1 Overview of Cz Control Issues; 3.1.2 Diameter Control; 3.1.3 Growth Rate Control; 3.1.4 Reconstruction of Quantities not Directly Measured; 3.1.5 Specific Problems for Control in Cz Crystal Growth; 3.1.6 PID Control vs. Model-Based Control; 3.1.7 Components of a Control System; 3.1.8 Modelling in Crystal Growth Analysis and Control; 3.2 Cz Control Approaches; 3.2.1 Proper Choice of Manipulated Variables 3.2.2 Feedforward Control |
| Record Nr. | UNINA-9910140606003321 |
| Chichester, West Sussex ; ; Hoboken, N.J., : Wiley, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Crystal growth processes based on capillarity [[electronic resource] ] : czochralski, floating zone, shaping and crucible techniques / / edited by Thierry Duffar
| Crystal growth processes based on capillarity [[electronic resource] ] : czochralski, floating zone, shaping and crucible techniques / / edited by Thierry Duffar |
| Pubbl/distr/stampa | Chichester, West Sussex ; ; Hoboken, N.J., : Wiley, 2010 |
| Descrizione fisica | 1 online resource (567 p.) |
| Disciplina |
548.5
548/.5 |
| Altri autori (Persone) | DuffarThierry |
| Soggetto topico |
Crystal growth
Crystallization |
| ISBN |
1-282-68431-0
9786612684319 1-4443-2023-8 1-4443-2021-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Crystal Growth Processes Based on Capillarity: Czochralski, Floating Zone,Shaping and Crucible Techniques; Contents; Preface; Introduction; Acknowledgements; Nomenclature; Contributors; 1: Basic Principles of Capillarity in Relation to Crystal Growth; 1.1 Definitions; 1.1.1 Characteristic Energies of Surfaces and Interfaces; 1.1.2 Capillary Pressure; 1.1.3 Surface Energy versus Surface Tension; 1.2 Contact Angles; 1.2.1 Thermodynamics; 1.2.2 Dynamics of Wetting; 1.2.3 Measurements of Contact Angle and Surface Tension by the Sessile Drop Technique
1.2.4 Selected Data for the Contact Angle for Systems of Interest for Crystal Growth1.3 Growth Angles; 1.3.1 Theory; 1.3.2 Measurements of Growth Angles: Methods and Values; 1.3.3 Application of the Growth Angle Condition in Simulations of Crystal Growth; 1.3.4 Summary; Acknowledgements; References; 2: The Possibility of Shape Stability in Capillary Crystal Growth and Practical Realization of Shaped Crystals; 2.1 Crucible-Free Crystal Growth - Capillary Shaping Techniques; 2.2 Dynamic Stability of Crystallization - the Basis of Shaped Crystal Growth by CST; 2.2.1 Lyapunov Equations 2.2.2 Capillary Problem - Common Approach2.2.3 Equation of Crystal Dimension Change Rate; 2.2.4 Equation of Crystallization Front Displacement Rate; 2.2.5 Stability Analysis in a System with Two Degrees of Freedom; 2.3 Stability Analysis and Growth of Shaped Crystals by the Cz Technique; 2.3.1 Capillary Problem; 2.3.2 Temperature Distribution in the Crystal-Melt System; 2.3.3 Stability Analysis and Shaped Crystal Growth; 2.3.4 Dynamic Stability Problem for the Kyropoulos Technique; 2.4 Stability Analysis and Growth of Shaped Crystals by the Verneuil Technique 2.4.1 Principal Schemes of Growth2.4.2 Theoretical Investigation; 2.4.3 Practical Results of the Theoretical Analysis; 2.4.4 Stability Analysis-Based Automation; 2.5 Stability Analysis and Growth of Shaped Crystals by the FZ Technique; 2.6 TPS Techniques: Capillary Shaping and Impurity Distribution; 2.6.1 Capillary Boundary Problem for TPS; 2.6.2 Stability Analysis; 2.6.3 Experimental Tests of the Capillary Shaping Theory Statements; 2.6.4 Impurity Distribution; 2.6.5 Definition of TPS; 2.6.6 Brief History of TPS; 2.7 Shaped Growth of Ge , Sapphire, Si, and Metals: a Brief Presentation 2.7.1 Ge2.7.2 Sapphire; 2.7.3 Si; 2.7.4 Metals and Alloys; 2.8 TPS Peculiarities; References; 3: Czochralski Process Dynamics and Control Design; 3.1 Introduction and Motivation; 3.1.1 Overview of Cz Control Issues; 3.1.2 Diameter Control; 3.1.3 Growth Rate Control; 3.1.4 Reconstruction of Quantities not Directly Measured; 3.1.5 Specific Problems for Control in Cz Crystal Growth; 3.1.6 PID Control vs. Model-Based Control; 3.1.7 Components of a Control System; 3.1.8 Modelling in Crystal Growth Analysis and Control; 3.2 Cz Control Approaches; 3.2.1 Proper Choice of Manipulated Variables 3.2.2 Feedforward Control |
| Record Nr. | UNINA-9910830815903321 |
| Chichester, West Sussex ; ; Hoboken, N.J., : Wiley, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Crystal growth processes based on capillarity : czochralski, floating zone, shaping and crucible techniques / / edited by Thierry Duffar
| Crystal growth processes based on capillarity : czochralski, floating zone, shaping and crucible techniques / / edited by Thierry Duffar |
| Pubbl/distr/stampa | Chichester, West Sussex ; ; Hoboken, N.J., : Wiley, 2010 |
| Descrizione fisica | 1 online resource (567 p.) |
| Disciplina | 548/.5 |
| Altri autori (Persone) | DuffarThierry |
| Soggetto topico |
Crystal growth
Crystallization |
| ISBN |
1-282-68431-0
9786612684319 1-4443-2023-8 1-4443-2021-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Crystal Growth Processes Based on Capillarity: Czochralski, Floating Zone,Shaping and Crucible Techniques; Contents; Preface; Introduction; Acknowledgements; Nomenclature; Contributors; 1: Basic Principles of Capillarity in Relation to Crystal Growth; 1.1 Definitions; 1.1.1 Characteristic Energies of Surfaces and Interfaces; 1.1.2 Capillary Pressure; 1.1.3 Surface Energy versus Surface Tension; 1.2 Contact Angles; 1.2.1 Thermodynamics; 1.2.2 Dynamics of Wetting; 1.2.3 Measurements of Contact Angle and Surface Tension by the Sessile Drop Technique
1.2.4 Selected Data for the Contact Angle for Systems of Interest for Crystal Growth1.3 Growth Angles; 1.3.1 Theory; 1.3.2 Measurements of Growth Angles: Methods and Values; 1.3.3 Application of the Growth Angle Condition in Simulations of Crystal Growth; 1.3.4 Summary; Acknowledgements; References; 2: The Possibility of Shape Stability in Capillary Crystal Growth and Practical Realization of Shaped Crystals; 2.1 Crucible-Free Crystal Growth - Capillary Shaping Techniques; 2.2 Dynamic Stability of Crystallization - the Basis of Shaped Crystal Growth by CST; 2.2.1 Lyapunov Equations 2.2.2 Capillary Problem - Common Approach2.2.3 Equation of Crystal Dimension Change Rate; 2.2.4 Equation of Crystallization Front Displacement Rate; 2.2.5 Stability Analysis in a System with Two Degrees of Freedom; 2.3 Stability Analysis and Growth of Shaped Crystals by the Cz Technique; 2.3.1 Capillary Problem; 2.3.2 Temperature Distribution in the Crystal-Melt System; 2.3.3 Stability Analysis and Shaped Crystal Growth; 2.3.4 Dynamic Stability Problem for the Kyropoulos Technique; 2.4 Stability Analysis and Growth of Shaped Crystals by the Verneuil Technique 2.4.1 Principal Schemes of Growth2.4.2 Theoretical Investigation; 2.4.3 Practical Results of the Theoretical Analysis; 2.4.4 Stability Analysis-Based Automation; 2.5 Stability Analysis and Growth of Shaped Crystals by the FZ Technique; 2.6 TPS Techniques: Capillary Shaping and Impurity Distribution; 2.6.1 Capillary Boundary Problem for TPS; 2.6.2 Stability Analysis; 2.6.3 Experimental Tests of the Capillary Shaping Theory Statements; 2.6.4 Impurity Distribution; 2.6.5 Definition of TPS; 2.6.6 Brief History of TPS; 2.7 Shaped Growth of Ge , Sapphire, Si, and Metals: a Brief Presentation 2.7.1 Ge2.7.2 Sapphire; 2.7.3 Si; 2.7.4 Metals and Alloys; 2.8 TPS Peculiarities; References; 3: Czochralski Process Dynamics and Control Design; 3.1 Introduction and Motivation; 3.1.1 Overview of Cz Control Issues; 3.1.2 Diameter Control; 3.1.3 Growth Rate Control; 3.1.4 Reconstruction of Quantities not Directly Measured; 3.1.5 Specific Problems for Control in Cz Crystal Growth; 3.1.6 PID Control vs. Model-Based Control; 3.1.7 Components of a Control System; 3.1.8 Modelling in Crystal Growth Analysis and Control; 3.2 Cz Control Approaches; 3.2.1 Proper Choice of Manipulated Variables 3.2.2 Feedforward Control |
| Record Nr. | UNINA-9910877847503321 |
| Chichester, West Sussex ; ; Hoboken, N.J., : Wiley, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
