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Advanced epitaxy for future electronics, optics, and quantum physics [[electronic resource] /] / by Arthur C. Gossard
| Advanced epitaxy for future electronics, optics, and quantum physics [[electronic resource] /] / by Arthur C. Gossard |
| Autore | Gossard A. C |
| Pubbl/distr/stampa | Washington, D.C., : National Academy Press, c2000 |
| Descrizione fisica | 1 online resource (19 p.) |
| Disciplina | 548/.5 |
| Collana |
International science lecture series
The compass series |
| Soggetto topico | Epitaxy |
| Soggetto genere / forma | Electronic books. |
| ISBN | 0-309-51287-5 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910456004403321 |
Gossard A. C
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| Washington, D.C., : National Academy Press, c2000 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Advanced epitaxy for future electronics, optics, and quantum physics [[electronic resource] /] / by Arthur C. Gossard
| Advanced epitaxy for future electronics, optics, and quantum physics [[electronic resource] /] / by Arthur C. Gossard |
| Autore | Gossard A. C |
| Pubbl/distr/stampa | Washington, D.C., : National Academy Press, c2000 |
| Descrizione fisica | 1 online resource (19 p.) |
| Disciplina | 548/.5 |
| Collana |
International science lecture series
The compass series |
| Soggetto topico | Epitaxy |
| ISBN |
0-309-18396-0
0-309-51287-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910778609003321 |
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Gossard A. C
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| Washington, D.C., : National Academy Press, c2000 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advanced epitaxy for future electronics, optics, and quantum physics / / by Arthur C. Gossard
| Advanced epitaxy for future electronics, optics, and quantum physics / / by Arthur C. Gossard |
| Autore | Gossard A. C |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Washington, D.C., : National Academy Press, c2000 |
| Descrizione fisica | 1 online resource (19 p.) |
| Disciplina | 548/.5 |
| Collana |
International science lecture series
The compass series |
| Soggetto topico | Epitaxy |
| ISBN |
9780309183963
0309183960 9780309512879 0309512875 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Front Matter -- Preface -- Abstract -- Advanced Epitaxy for Future Electronics, Optics, and Quantum Physics. |
| Record Nr. | UNINA-9910960098903321 |
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Gossard A. C
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| Washington, D.C., : National Academy Press, c2000 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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CRYSTAL growth / Edited by B.R. Pamplin
| CRYSTAL growth / Edited by B.R. Pamplin |
| Autore | Pamplin, Brian R. |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | Oxford : Pergamon Press, 1975 |
| Descrizione fisica | XIV,672 p. ; 24 cm |
| Disciplina | 548/.5 |
| Collana | International series of monographs on the science of the solid state |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-990000349340403321 |
| Pamplin, Brian R. | ||
| Oxford : Pergamon Press, 1975 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Crystal growth for beginners [[electronic resource] ] : fundamentals of nucleation, crystal growth and epitaxy / / Ivan V Markov
| Crystal growth for beginners [[electronic resource] ] : fundamentals of nucleation, crystal growth and epitaxy / / Ivan V Markov |
| Autore | Markov Ivan V. <1941-> |
| Edizione | [2nd ed.] |
| Pubbl/distr/stampa | Singapore ; ; River Edge, N.J., : World Scientific, c2003 |
| Descrizione fisica | 1 online resource (xviii, 546 p. ) : ill |
| Disciplina | 548/.5 |
| Soggetto topico | Crystal growth |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-94791-1
9786611947910 981-279-689-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Crystal -- Ambient Phase Equilibrium - Nucleation - Crystal Growth - Epitaxial Growth |
| Record Nr. | UNINA-9910454088703321 |
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Markov Ivan V. <1941->
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| Singapore ; ; River Edge, N.J., : World Scientific, c2003 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Crystal growth for beginners [[electronic resource] ] : fundamentals of nucleation, crystal growth and epitaxy / / Ivan V Markov
| Crystal growth for beginners [[electronic resource] ] : fundamentals of nucleation, crystal growth and epitaxy / / Ivan V Markov |
| Autore | Markov Ivan V. <1941-> |
| Edizione | [2nd ed.] |
| Pubbl/distr/stampa | Singapore ; ; River Edge, N.J., : World Scientific, c2003 |
| Descrizione fisica | 1 online resource (xviii, 546 p. ) : ill |
| Disciplina | 548/.5 |
| Soggetto topico | Crystal growth |
| ISBN |
1-281-94791-1
9786611947910 981-279-689-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Crystal -- Ambient Phase Equilibrium - Nucleation - Crystal Growth - Epitaxial Growth |
| Record Nr. | UNINA-9910782282703321 |
|
Markov Ivan V. <1941->
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| Singapore ; ; River Edge, N.J., : World Scientific, c2003 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Crystal growth processes based on capillarity [[electronic resource] ] : czochralski, floating zone, shaping and crucible techniques / / edited by Thierry Duffar
| Crystal growth processes based on capillarity [[electronic resource] ] : czochralski, floating zone, shaping and crucible techniques / / edited by Thierry Duffar |
| Pubbl/distr/stampa | Chichester, West Sussex ; ; Hoboken, N.J., : Wiley, 2010 |
| Descrizione fisica | 1 online resource (567 p.) |
| Disciplina |
548.5
548/.5 |
| Altri autori (Persone) | DuffarThierry |
| Soggetto topico |
Crystal growth
Crystallization |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-282-68431-0
9786612684319 1-4443-2023-8 1-4443-2021-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Crystal Growth Processes Based on Capillarity: Czochralski, Floating Zone,Shaping and Crucible Techniques; Contents; Preface; Introduction; Acknowledgements; Nomenclature; Contributors; 1: Basic Principles of Capillarity in Relation to Crystal Growth; 1.1 Definitions; 1.1.1 Characteristic Energies of Surfaces and Interfaces; 1.1.2 Capillary Pressure; 1.1.3 Surface Energy versus Surface Tension; 1.2 Contact Angles; 1.2.1 Thermodynamics; 1.2.2 Dynamics of Wetting; 1.2.3 Measurements of Contact Angle and Surface Tension by the Sessile Drop Technique
1.2.4 Selected Data for the Contact Angle for Systems of Interest for Crystal Growth1.3 Growth Angles; 1.3.1 Theory; 1.3.2 Measurements of Growth Angles: Methods and Values; 1.3.3 Application of the Growth Angle Condition in Simulations of Crystal Growth; 1.3.4 Summary; Acknowledgements; References; 2: The Possibility of Shape Stability in Capillary Crystal Growth and Practical Realization of Shaped Crystals; 2.1 Crucible-Free Crystal Growth - Capillary Shaping Techniques; 2.2 Dynamic Stability of Crystallization - the Basis of Shaped Crystal Growth by CST; 2.2.1 Lyapunov Equations 2.2.2 Capillary Problem - Common Approach2.2.3 Equation of Crystal Dimension Change Rate; 2.2.4 Equation of Crystallization Front Displacement Rate; 2.2.5 Stability Analysis in a System with Two Degrees of Freedom; 2.3 Stability Analysis and Growth of Shaped Crystals by the Cz Technique; 2.3.1 Capillary Problem; 2.3.2 Temperature Distribution in the Crystal-Melt System; 2.3.3 Stability Analysis and Shaped Crystal Growth; 2.3.4 Dynamic Stability Problem for the Kyropoulos Technique; 2.4 Stability Analysis and Growth of Shaped Crystals by the Verneuil Technique 2.4.1 Principal Schemes of Growth2.4.2 Theoretical Investigation; 2.4.3 Practical Results of the Theoretical Analysis; 2.4.4 Stability Analysis-Based Automation; 2.5 Stability Analysis and Growth of Shaped Crystals by the FZ Technique; 2.6 TPS Techniques: Capillary Shaping and Impurity Distribution; 2.6.1 Capillary Boundary Problem for TPS; 2.6.2 Stability Analysis; 2.6.3 Experimental Tests of the Capillary Shaping Theory Statements; 2.6.4 Impurity Distribution; 2.6.5 Definition of TPS; 2.6.6 Brief History of TPS; 2.7 Shaped Growth of Ge , Sapphire, Si, and Metals: a Brief Presentation 2.7.1 Ge2.7.2 Sapphire; 2.7.3 Si; 2.7.4 Metals and Alloys; 2.8 TPS Peculiarities; References; 3: Czochralski Process Dynamics and Control Design; 3.1 Introduction and Motivation; 3.1.1 Overview of Cz Control Issues; 3.1.2 Diameter Control; 3.1.3 Growth Rate Control; 3.1.4 Reconstruction of Quantities not Directly Measured; 3.1.5 Specific Problems for Control in Cz Crystal Growth; 3.1.6 PID Control vs. Model-Based Control; 3.1.7 Components of a Control System; 3.1.8 Modelling in Crystal Growth Analysis and Control; 3.2 Cz Control Approaches; 3.2.1 Proper Choice of Manipulated Variables 3.2.2 Feedforward Control |
| Record Nr. | UNINA-9910140606003321 |
| Chichester, West Sussex ; ; Hoboken, N.J., : Wiley, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Crystal growth processes based on capillarity [[electronic resource] ] : czochralski, floating zone, shaping and crucible techniques / / edited by Thierry Duffar
| Crystal growth processes based on capillarity [[electronic resource] ] : czochralski, floating zone, shaping and crucible techniques / / edited by Thierry Duffar |
| Pubbl/distr/stampa | Chichester, West Sussex ; ; Hoboken, N.J., : Wiley, 2010 |
| Descrizione fisica | 1 online resource (567 p.) |
| Disciplina |
548.5
548/.5 |
| Altri autori (Persone) | DuffarThierry |
| Soggetto topico |
Crystal growth
Crystallization |
| ISBN |
1-282-68431-0
9786612684319 1-4443-2023-8 1-4443-2021-1 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Crystal Growth Processes Based on Capillarity: Czochralski, Floating Zone,Shaping and Crucible Techniques; Contents; Preface; Introduction; Acknowledgements; Nomenclature; Contributors; 1: Basic Principles of Capillarity in Relation to Crystal Growth; 1.1 Definitions; 1.1.1 Characteristic Energies of Surfaces and Interfaces; 1.1.2 Capillary Pressure; 1.1.3 Surface Energy versus Surface Tension; 1.2 Contact Angles; 1.2.1 Thermodynamics; 1.2.2 Dynamics of Wetting; 1.2.3 Measurements of Contact Angle and Surface Tension by the Sessile Drop Technique
1.2.4 Selected Data for the Contact Angle for Systems of Interest for Crystal Growth1.3 Growth Angles; 1.3.1 Theory; 1.3.2 Measurements of Growth Angles: Methods and Values; 1.3.3 Application of the Growth Angle Condition in Simulations of Crystal Growth; 1.3.4 Summary; Acknowledgements; References; 2: The Possibility of Shape Stability in Capillary Crystal Growth and Practical Realization of Shaped Crystals; 2.1 Crucible-Free Crystal Growth - Capillary Shaping Techniques; 2.2 Dynamic Stability of Crystallization - the Basis of Shaped Crystal Growth by CST; 2.2.1 Lyapunov Equations 2.2.2 Capillary Problem - Common Approach2.2.3 Equation of Crystal Dimension Change Rate; 2.2.4 Equation of Crystallization Front Displacement Rate; 2.2.5 Stability Analysis in a System with Two Degrees of Freedom; 2.3 Stability Analysis and Growth of Shaped Crystals by the Cz Technique; 2.3.1 Capillary Problem; 2.3.2 Temperature Distribution in the Crystal-Melt System; 2.3.3 Stability Analysis and Shaped Crystal Growth; 2.3.4 Dynamic Stability Problem for the Kyropoulos Technique; 2.4 Stability Analysis and Growth of Shaped Crystals by the Verneuil Technique 2.4.1 Principal Schemes of Growth2.4.2 Theoretical Investigation; 2.4.3 Practical Results of the Theoretical Analysis; 2.4.4 Stability Analysis-Based Automation; 2.5 Stability Analysis and Growth of Shaped Crystals by the FZ Technique; 2.6 TPS Techniques: Capillary Shaping and Impurity Distribution; 2.6.1 Capillary Boundary Problem for TPS; 2.6.2 Stability Analysis; 2.6.3 Experimental Tests of the Capillary Shaping Theory Statements; 2.6.4 Impurity Distribution; 2.6.5 Definition of TPS; 2.6.6 Brief History of TPS; 2.7 Shaped Growth of Ge , Sapphire, Si, and Metals: a Brief Presentation 2.7.1 Ge2.7.2 Sapphire; 2.7.3 Si; 2.7.4 Metals and Alloys; 2.8 TPS Peculiarities; References; 3: Czochralski Process Dynamics and Control Design; 3.1 Introduction and Motivation; 3.1.1 Overview of Cz Control Issues; 3.1.2 Diameter Control; 3.1.3 Growth Rate Control; 3.1.4 Reconstruction of Quantities not Directly Measured; 3.1.5 Specific Problems for Control in Cz Crystal Growth; 3.1.6 PID Control vs. Model-Based Control; 3.1.7 Components of a Control System; 3.1.8 Modelling in Crystal Growth Analysis and Control; 3.2 Cz Control Approaches; 3.2.1 Proper Choice of Manipulated Variables 3.2.2 Feedforward Control |
| Record Nr. | UNINA-9910830815903321 |
| Chichester, West Sussex ; ; Hoboken, N.J., : Wiley, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Crystal growth processes based on capillarity : czochralski, floating zone, shaping and crucible techniques / / edited by Thierry Duffar
| Crystal growth processes based on capillarity : czochralski, floating zone, shaping and crucible techniques / / edited by Thierry Duffar |
| Pubbl/distr/stampa | Chichester, West Sussex ; ; Hoboken, N.J., : Wiley, 2010 |
| Descrizione fisica | 1 online resource (567 p.) |
| Disciplina | 548/.5 |
| Altri autori (Persone) | DuffarThierry |
| Soggetto topico |
Crystal growth
Crystallization |
| ISBN |
9786612684319
9781282684317 1282684310 9781444320237 1444320238 9781444320213 1444320211 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Crystal Growth Processes Based on Capillarity: Czochralski, Floating Zone,Shaping and Crucible Techniques; Contents; Preface; Introduction; Acknowledgements; Nomenclature; Contributors; 1: Basic Principles of Capillarity in Relation to Crystal Growth; 1.1 Definitions; 1.1.1 Characteristic Energies of Surfaces and Interfaces; 1.1.2 Capillary Pressure; 1.1.3 Surface Energy versus Surface Tension; 1.2 Contact Angles; 1.2.1 Thermodynamics; 1.2.2 Dynamics of Wetting; 1.2.3 Measurements of Contact Angle and Surface Tension by the Sessile Drop Technique
1.2.4 Selected Data for the Contact Angle for Systems of Interest for Crystal Growth1.3 Growth Angles; 1.3.1 Theory; 1.3.2 Measurements of Growth Angles: Methods and Values; 1.3.3 Application of the Growth Angle Condition in Simulations of Crystal Growth; 1.3.4 Summary; Acknowledgements; References; 2: The Possibility of Shape Stability in Capillary Crystal Growth and Practical Realization of Shaped Crystals; 2.1 Crucible-Free Crystal Growth - Capillary Shaping Techniques; 2.2 Dynamic Stability of Crystallization - the Basis of Shaped Crystal Growth by CST; 2.2.1 Lyapunov Equations 2.2.2 Capillary Problem - Common Approach2.2.3 Equation of Crystal Dimension Change Rate; 2.2.4 Equation of Crystallization Front Displacement Rate; 2.2.5 Stability Analysis in a System with Two Degrees of Freedom; 2.3 Stability Analysis and Growth of Shaped Crystals by the Cz Technique; 2.3.1 Capillary Problem; 2.3.2 Temperature Distribution in the Crystal-Melt System; 2.3.3 Stability Analysis and Shaped Crystal Growth; 2.3.4 Dynamic Stability Problem for the Kyropoulos Technique; 2.4 Stability Analysis and Growth of Shaped Crystals by the Verneuil Technique 2.4.1 Principal Schemes of Growth2.4.2 Theoretical Investigation; 2.4.3 Practical Results of the Theoretical Analysis; 2.4.4 Stability Analysis-Based Automation; 2.5 Stability Analysis and Growth of Shaped Crystals by the FZ Technique; 2.6 TPS Techniques: Capillary Shaping and Impurity Distribution; 2.6.1 Capillary Boundary Problem for TPS; 2.6.2 Stability Analysis; 2.6.3 Experimental Tests of the Capillary Shaping Theory Statements; 2.6.4 Impurity Distribution; 2.6.5 Definition of TPS; 2.6.6 Brief History of TPS; 2.7 Shaped Growth of Ge , Sapphire, Si, and Metals: a Brief Presentation 2.7.1 Ge2.7.2 Sapphire; 2.7.3 Si; 2.7.4 Metals and Alloys; 2.8 TPS Peculiarities; References; 3: Czochralski Process Dynamics and Control Design; 3.1 Introduction and Motivation; 3.1.1 Overview of Cz Control Issues; 3.1.2 Diameter Control; 3.1.3 Growth Rate Control; 3.1.4 Reconstruction of Quantities not Directly Measured; 3.1.5 Specific Problems for Control in Cz Crystal Growth; 3.1.6 PID Control vs. Model-Based Control; 3.1.7 Components of a Control System; 3.1.8 Modelling in Crystal Growth Analysis and Control; 3.2 Cz Control Approaches; 3.2.1 Proper Choice of Manipulated Variables 3.2.2 Feedforward Control |
| Record Nr. | UNINA-9911020446403321 |
| Chichester, West Sussex ; ; Hoboken, N.J., : Wiley, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Crystal growth technology / / K. Byrappa, T. Ohachi (eds.)
| Crystal growth technology / / K. Byrappa, T. Ohachi (eds.) |
| Pubbl/distr/stampa | Norwich, N.Y., : William Andrew Pub. |
| Descrizione fisica | 1 online resource (613 p.) |
| Disciplina | 548/.5 |
| Altri autori (Persone) |
ByrappaK
OhachiT |
| Collana | Springer series in materials processing |
| Soggetto topico | Crystal growth |
| ISBN |
0-08-094685-2
9786612755231 1-282-75523-4 1-282-01377-7 9786612013775 0-8155-1680-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Front Cover; Crystal Growth Technology; Copyright Page; Contents; Chapter 1 Growth Histories of Mineral Crystals as Seen from Their Morphological Features; 1.1 Introduction; 1.2 Morphology of Crystals; 1.3 Diamond; 1.4 Beryl; 1.5 Trapiche Ruby; 1.6 Summary; References; Chapter 2 Theory of Crystal Growth from Vapor and Solution; 2.1 Various Crystal Growth Processes; 2.2 Vapor Growth; 2.3 Growth of a Crystal in a Solution; References; Chapter 3 Epitaxial Growth of III-V Compounds; 3.1 Introduction; 3.2 MBE of III-V Compounds; 3.3 MOCVD of III-V Compounds; 3.4 Summary; References
Chapter 4 CVD Diamond Growth4.1 Introduction; 4.2 Preparation and Application of CVD Film; 4.3 Nucleation and Growth of Diarno; 4.4 Phase Diagram and Gas-Phase Species in CVD Diamond Growth Processes; 4.5 In Situ Diagnostic Techniques for Diamond Growth; 4.6 Summary; References; Chapter 5 Laser-Assisted Growth and Characterization of Multicomponent Lead-Zirconate-Titanate Films; 5.1 Introduction; 5.2 Film Deposition Process; 5.3 Case Study: Nd-Modified PZT Films; 5.4 Results from XRD and EDS Measurements; 5.5 Compositional and Structural Changes in the Target 5.6 Raman Spectroscopy Studies of PZT Films5.7 Electrical Properties of PNZT Films; 5.8 Summary; References; Chapter 6 Silicon Carbide Crystals -Part I: Growth and Characterization; 6.1 Introduction; 6.2 Vapor Growth; 6.3 High Temperature Solution Growth; 6.4 Bulk Growth by Seeded Sublimation: The Industrial Process; 6.5 Doping in Bulk and Epitaxial Growth; 6.6 Growth Defects; 6.7 Defect Analysis; 6.8 Summary; References; Chapter 7 Silicon Carbide Crystals - Part II: Process Physics and Modeling; 7.1 Introduction; 7.2 Modeling of Heat and Mass Transfer and Growth Rate; 7.3 Growth Simulation 7.4 Summary References; Chapter 8 Thermodynamics of Multicomponent Perovskite Synthesis in Hydrothermal Solution; 8.1 Introduction; 8.2 Thermodynamic Model; 8.3 Validation and Applications of Thermodynamic Modeling; 8.4 Summary; References; Chapter 9 Growth of Multicomponent Perovskite Oxide Crystals: Synthesis Conditions for the Hydrothermal Growth of Ferroelectric Powders; 9.1 Introduction; 9.2 General Overview; 9.3 Synthesis Conditions for Controlled Chemical and Phase Purity; 9.4 Kinetics and Rate Controlling Mechanisms; 9.5 Synthesis Conditions for Controlled Morphology 9.6 Syntesis Conditions for Controlled Particle Size9.7 Summary; References; Chapter 10 Crystal Growth, Size, and Morphology Control of Nd:RVO4 Under Hydrothermal Conditions; 10.1 Introduction; 10.2 Technologically Important Vanadates; 10.3 Phase Equilibria; 10.4 Structure of Nd:RVO4; 10.5 Synthesis and Growth of Rare Earth Vanadates; 10.6 Solubility Study; 10.7 Crystal Growth; 10.8 Morphology; 10.9 Characterization; 10.10 Summary; References; Chapter 11 Hydrothermal Growth of Quartz Under Specific Conditions and the Raman Spectra of Ion Species in a Hydrothermal Growth Solution 11.1 Introduction |
| Record Nr. | UNINA-9911006841703321 |
| Norwich, N.Y., : William Andrew Pub. | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
