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Functionalization of semiconductor surfaces [[electronic resource] /] / edited by Franklin (Feng) Tao, Steven L. Bernasek
| Functionalization of semiconductor surfaces [[electronic resource] /] / edited by Franklin (Feng) Tao, Steven L. Bernasek |
| Edizione | [1st edition] |
| Pubbl/distr/stampa | Hoboken, N.J., : Wiley, 2012 |
| Descrizione fisica | 1 online resource (456 p.) |
| Disciplina | 541/.377 |
| Altri autori (Persone) |
TaoFeng <1971->
BernasekS. L (Steven L.) |
| Soggetto topico |
Semiconductors - Surfaces
Semiconductors - Materials |
| ISBN |
1-280-58968-X
9786613619518 1-118-19980-4 1-118-19977-4 1-118-19978-2 |
| Classificazione | TEC021000 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Introduction / Franklin (Feng) Tao, Yuan Zhu, and Steven L. Bernasek -- Surface analytical techniques / Ying Wei Cai and Steven L. Bernasek -- Structures of semiconductor surfaces and origins of surface reactivity with organic molecules / Yongquan Qu and Keli Han -- Pericyclic reactions of organic molecules at semiconductor surfaces -- Keith T. Wong and Stacey F. Bent -- Chemical binding of five-membered and six-membered aromatic molecules / Franklin F. Tao and Steven L. Bernasek -- Influence of functional groups in substituted aromatic molecules on the selection of reaction channel in semiconductor surface functionalization / Andrew V. Teplyakov -- Covalent binding of polycyclic aromatic hydrocarbon systems / Dr. Yong Kian Soon and Professor Xu Guo-Qin -- / Young Hwan Min, Hangil lee, Do Hwan Kim, and Sehun Kim -- Ab initio molecular dynamics studies of conjugated dienes on semiconductor surfaces / Mark E. Tuckerman and Yanli Zhang -- Formation of organic nanostructures on semiconductor surfaces / Zakir Hossain and Maki Kawai -- Formation of organic monolayers through wet chemistry / Damien Aureau and Yves J. Chabal -- Chemical stability of organic monolayers formed in solution / Leslie E. O'Leary, Erik Johansson, and Nathan S. Lewis -- Immobilization of biomolecules at semiconductor interfaces / Robert J. Hamers -- Perspective and challenge / Franklin (Feng) Tao and Steven L. Bernasek. |
| Record Nr. | UNINA-9910141330603321 |
| Hoboken, N.J., : Wiley, 2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Functionalization of semiconductor surfaces / / edited by Franklin (Feng) Tao, Steven L. Bernasek
| Functionalization of semiconductor surfaces / / edited by Franklin (Feng) Tao, Steven L. Bernasek |
| Edizione | [1st edition] |
| Pubbl/distr/stampa | Hoboken, N.J., : Wiley, 2012 |
| Descrizione fisica | 1 online resource (456 p.) |
| Disciplina | 541/.377 |
| Altri autori (Persone) |
TaoFeng <1971->
BernasekS. L (Steven L.) |
| Soggetto topico |
Semiconductors - Surfaces
Semiconductors - Materials |
| ISBN |
1-280-58968-X
9786613619518 1-118-19980-4 1-118-19977-4 1-118-19978-2 |
| Classificazione | TEC021000 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Introduction / Franklin (Feng) Tao, Yuan Zhu, and Steven L. Bernasek -- Surface analytical techniques / Ying Wei Cai and Steven L. Bernasek -- Structures of semiconductor surfaces and origins of surface reactivity with organic molecules / Yongquan Qu and Keli Han -- Pericyclic reactions of organic molecules at semiconductor surfaces -- Keith T. Wong and Stacey F. Bent -- Chemical binding of five-membered and six-membered aromatic molecules / Franklin F. Tao and Steven L. Bernasek -- Influence of functional groups in substituted aromatic molecules on the selection of reaction channel in semiconductor surface functionalization / Andrew V. Teplyakov -- Covalent binding of polycyclic aromatic hydrocarbon systems / Dr. Yong Kian Soon and Professor Xu Guo-Qin -- / Young Hwan Min, Hangil lee, Do Hwan Kim, and Sehun Kim -- Ab initio molecular dynamics studies of conjugated dienes on semiconductor surfaces / Mark E. Tuckerman and Yanli Zhang -- Formation of organic nanostructures on semiconductor surfaces / Zakir Hossain and Maki Kawai -- Formation of organic monolayers through wet chemistry / Damien Aureau and Yves J. Chabal -- Chemical stability of organic monolayers formed in solution / Leslie E. O'Leary, Erik Johansson, and Nathan S. Lewis -- Immobilization of biomolecules at semiconductor interfaces / Robert J. Hamers -- Perspective and challenge / Franklin (Feng) Tao and Steven L. Bernasek. |
| Record Nr. | UNINA-9910808825903321 |
| Hoboken, N.J., : Wiley, 2012 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
III-nitride [[electronic resource] ] : semiconductor materials / / editor, Zhe Chuan Feng
| III-nitride [[electronic resource] ] : semiconductor materials / / editor, Zhe Chuan Feng |
| Pubbl/distr/stampa | London, : Imperial College Press, c2006 |
| Descrizione fisica | 1 online resource (440 p.) |
| Disciplina |
541.377
541/.377 621.38152 |
| Altri autori (Persone) | FengZhe Chuan |
| Soggetto topico |
Semiconductors - Materials
Nitrides |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-86721-7
9786611867218 1-86094-903-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS ; Preface ; Chapter 1 Hydride vapor phase epitaxy of group III nitride materials ; 1.Introduction ; 2.Experiment ; 3.Material Properties ; 3.1. Undoped GaN layers ; 3.2. Si-doped GaN layers ; 3.3. Mg-doped GaN layers ; 3.4. Zn-doped GaN layers ; 3.5. AlN layers
3.6. AlGaN layers 3.7. InN and InGaN layers ; 4.New directions in HVPE development ; 4.1. Large area and multi wafer HVPE growth ; 4.2. Multi-layer structures ; 4.3. P-n junctions ; 4.4. Structures with two dimensional carrier gas ; 4.5. Nano structures and porous materials 5.Applications of HVPE grown group III nitride materials 5.1. Substrate applications ; 5.1.1. Template substrates ; 5.1.2. Free-standing substrates ; 5.1.3. Bulk substrates ; 5.2. Device Applications ; 6.Conclusions Chapter 2 Planar MOVPE technology for epitaxy of III-nitride materials 1. History of Reactor Development for III-Nitrides ; 2. Types of Planar Reactors ; 3. Reactor Modeling ; 3.1. Growth Kinetics of Group-III Nitride MOVPE ; 3.2. Modeling of MOVPE processes 3.3. Horizontal Tube Reactors: Flow Dynamics and Reactor Technology 3.4. Planetary Reactors: Transport Phenomena & Parameter Dependencies ; 4. In-situ Technology in Nitride MOCVD Systems ; 5. The Mass Production of GaN and Related Materials ; 5.1. Optoelectronic Device Structures 5.2. Growth in the 8x4 inch Configuration |
| Record Nr. | UNINA-9910458627603321 |
| London, : Imperial College Press, c2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
III-nitride [[electronic resource] ] : semiconductor materials / / editor, Zhe Chuan Feng
| III-nitride [[electronic resource] ] : semiconductor materials / / editor, Zhe Chuan Feng |
| Pubbl/distr/stampa | London, : Imperial College Press, c2006 |
| Descrizione fisica | 1 online resource (440 p.) |
| Disciplina |
541.377
541/.377 621.38152 |
| Altri autori (Persone) | FengZhe Chuan |
| Soggetto topico |
Semiconductors - Materials
Nitrides |
| ISBN |
1-281-86721-7
9786611867218 1-86094-903-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS ; Preface ; Chapter 1 Hydride vapor phase epitaxy of group III nitride materials ; 1.Introduction ; 2.Experiment ; 3.Material Properties ; 3.1. Undoped GaN layers ; 3.2. Si-doped GaN layers ; 3.3. Mg-doped GaN layers ; 3.4. Zn-doped GaN layers ; 3.5. AlN layers
3.6. AlGaN layers 3.7. InN and InGaN layers ; 4.New directions in HVPE development ; 4.1. Large area and multi wafer HVPE growth ; 4.2. Multi-layer structures ; 4.3. P-n junctions ; 4.4. Structures with two dimensional carrier gas ; 4.5. Nano structures and porous materials 5.Applications of HVPE grown group III nitride materials 5.1. Substrate applications ; 5.1.1. Template substrates ; 5.1.2. Free-standing substrates ; 5.1.3. Bulk substrates ; 5.2. Device Applications ; 6.Conclusions Chapter 2 Planar MOVPE technology for epitaxy of III-nitride materials 1. History of Reactor Development for III-Nitrides ; 2. Types of Planar Reactors ; 3. Reactor Modeling ; 3.1. Growth Kinetics of Group-III Nitride MOVPE ; 3.2. Modeling of MOVPE processes 3.3. Horizontal Tube Reactors: Flow Dynamics and Reactor Technology 3.4. Planetary Reactors: Transport Phenomena & Parameter Dependencies ; 4. In-situ Technology in Nitride MOCVD Systems ; 5. The Mass Production of GaN and Related Materials ; 5.1. Optoelectronic Device Structures 5.2. Growth in the 8x4 inch Configuration |
| Record Nr. | UNINA-9910784745703321 |
| London, : Imperial College Press, c2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
III-nitride : semiconductor materials / / editor, Zhe Chuan Feng
| III-nitride : semiconductor materials / / editor, Zhe Chuan Feng |
| Edizione | [1st ed.] |
| Pubbl/distr/stampa | London, : Imperial College Press, c2006 |
| Descrizione fisica | 1 online resource (440 p.) |
| Disciplina |
541.377
541/.377 621.38152 |
| Altri autori (Persone) | FengZhe Chuan |
| Soggetto topico |
Semiconductors - Materials
Nitrides |
| ISBN |
1-281-86721-7
9786611867218 1-86094-903-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
CONTENTS ; Preface ; Chapter 1 Hydride vapor phase epitaxy of group III nitride materials ; 1.Introduction ; 2.Experiment ; 3.Material Properties ; 3.1. Undoped GaN layers ; 3.2. Si-doped GaN layers ; 3.3. Mg-doped GaN layers ; 3.4. Zn-doped GaN layers ; 3.5. AlN layers
3.6. AlGaN layers 3.7. InN and InGaN layers ; 4.New directions in HVPE development ; 4.1. Large area and multi wafer HVPE growth ; 4.2. Multi-layer structures ; 4.3. P-n junctions ; 4.4. Structures with two dimensional carrier gas ; 4.5. Nano structures and porous materials 5.Applications of HVPE grown group III nitride materials 5.1. Substrate applications ; 5.1.1. Template substrates ; 5.1.2. Free-standing substrates ; 5.1.3. Bulk substrates ; 5.2. Device Applications ; 6.Conclusions Chapter 2 Planar MOVPE technology for epitaxy of III-nitride materials 1. History of Reactor Development for III-Nitrides ; 2. Types of Planar Reactors ; 3. Reactor Modeling ; 3.1. Growth Kinetics of Group-III Nitride MOVPE ; 3.2. Modeling of MOVPE processes 3.3. Horizontal Tube Reactors: Flow Dynamics and Reactor Technology 3.4. Planetary Reactors: Transport Phenomena & Parameter Dependencies ; 4. In-situ Technology in Nitride MOCVD Systems ; 5. The Mass Production of GaN and Related Materials ; 5.1. Optoelectronic Device Structures 5.2. Growth in the 8x4 inch Configuration |
| Record Nr. | UNINA-9910821433903321 |
| London, : Imperial College Press, c2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||