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Amorphous silicon / Kazunobu Tanaka ...[et al.] ; translated by Takeshi Sato
| Amorphous silicon / Kazunobu Tanaka ...[et al.] ; translated by Takeshi Sato |
| Pubbl/distr/stampa | Chichester [etc.] : John Wiley & Sons, 1999 |
| Descrizione fisica | XI, 259 p. : ill. ; 24 cm |
| Disciplina | 537.6223 |
| Soggetto topico | Siliconi - Proprietà elettriche |
| ISBN | 0-471-98293-8 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISA-990002409860203316 |
| Chichester [etc.] : John Wiley & Sons, 1999 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
GaN-based materials and devices [[electronic resource] ] : growth, fabrication, characterization and performance / / editors, M.S. Shur, R.F. Davis
| GaN-based materials and devices [[electronic resource] ] : growth, fabrication, characterization and performance / / editors, M.S. Shur, R.F. Davis |
| Edizione | [33th ed.] |
| Pubbl/distr/stampa | Singapore ; ; River Edge, N.J., : World Scientific, c2004 |
| Descrizione fisica | 1 online resource (295 p.) |
| Disciplina |
537.6223
621.38152 |
| Altri autori (Persone) |
ShurMichael
DavisRobert F <1942-> (Robert Foster) |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Gallium nitride
Semiconductors |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-34762-0
9786611347628 981-256-236-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Preface; CONTENTS; Materials Properties of Nitrides. Summary; Kinetics, Microstructure and Strain in GaN Thin Films Grown Via Pendeo-Epitaxy; Strain of GaN Layers Grown Using 6H-SiC(0001) Substrates with Different Buffer Layers; Growth of Thick GaN Films and Seeds for Bulk Crystal Growth; Cracking of GaN Films; Direct Bonding of GaN and SiC; A Novel Technique for Electronic Device Fabrication; Electronic Properties of GaN (0001) - Dielectronic Interfaces; Transport and Noise Properties; Quasi-Ballistic and Overshoot Transport in Group III-Nitrides; High Field Transport in AIN
Generation-Recombination Noise in GaN-Based DevicesInsulated Gate III-N Heterostructure Field-Effect Transistors; High Voltage AIGaN/GaN Heterojunction Transistors; Etched Aperture GaN CAVET Through Photoelectrochemical Wet Etching; n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor: The First Transistor Formed Via Wafer Fusion |
| Record Nr. | UNINA-9910450147803321 |
| Singapore ; ; River Edge, N.J., : World Scientific, c2004 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
GaN-based materials and devices [[electronic resource] ] : growth, fabrication, characterization and performance / / editors, M.S. Shur, R.F. Davis
| GaN-based materials and devices [[electronic resource] ] : growth, fabrication, characterization and performance / / editors, M.S. Shur, R.F. Davis |
| Edizione | [33th ed.] |
| Pubbl/distr/stampa | Singapore ; ; River Edge, N.J., : World Scientific, c2004 |
| Descrizione fisica | 1 online resource (295 p.) |
| Disciplina |
537.6223
621.38152 |
| Altri autori (Persone) |
ShurMichael
DavisRobert F <1942-> (Robert Foster) |
| Collana | Selected topics in electronics and systems |
| Soggetto topico |
Gallium nitride
Semiconductors |
| ISBN |
1-281-34762-0
9786611347628 981-256-236-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Preface; CONTENTS; Materials Properties of Nitrides. Summary; Kinetics, Microstructure and Strain in GaN Thin Films Grown Via Pendeo-Epitaxy; Strain of GaN Layers Grown Using 6H-SiC(0001) Substrates with Different Buffer Layers; Growth of Thick GaN Films and Seeds for Bulk Crystal Growth; Cracking of GaN Films; Direct Bonding of GaN and SiC; A Novel Technique for Electronic Device Fabrication; Electronic Properties of GaN (0001) - Dielectronic Interfaces; Transport and Noise Properties; Quasi-Ballistic and Overshoot Transport in Group III-Nitrides; High Field Transport in AIN
Generation-Recombination Noise in GaN-Based DevicesInsulated Gate III-N Heterostructure Field-Effect Transistors; High Voltage AIGaN/GaN Heterojunction Transistors; Etched Aperture GaN CAVET Through Photoelectrochemical Wet Etching; n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor: The First Transistor Formed Via Wafer Fusion |
| Record Nr. | UNINA-9910783218003321 |
| Singapore ; ; River Edge, N.J., : World Scientific, c2004 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
High-Frequency GaN Electronic Devices / / edited by Patrick Fay, Debdeep Jena, Paul Maki
| High-Frequency GaN Electronic Devices / / edited by Patrick Fay, Debdeep Jena, Paul Maki |
| Edizione | [1st ed. 2020.] |
| Pubbl/distr/stampa | Cham : , : Springer International Publishing : , : Imprint : Springer, , 2020 |
| Descrizione fisica | 1 online resource (308 pages) |
| Disciplina |
621.3815
537.6223 |
| Soggetto topico |
Electronic circuits
Electronics Microelectronics Circuits and Systems Electronic Circuits and Devices Electronics and Microelectronics, Instrumentation |
| ISBN | 3-030-20208-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Chapter 1. Introduction -- Chapter 2.High Power High Frequency Transistors: A Materials Perspective -- Chapter 3. Isotope Engineering of GaN for Boosting Transistor Speeds -- Chapter 4. Linearity Aspects of High Power Amplification in GaN Transistors -- Chapter 5. III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA) -- Chapter 6.Plasma-Wave Propagation in GaN and Its Applications -- Chapter 7.Numerical Simulation of Distributed Electromagnetic and Plasma-wave Effect Devices -- Chapter 8.Resonant Tunneling Transport in Polar III-Nitride Heterostructures -- Chapter 9.Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes -- Chapter 10.Non-Contact Metrology for mm-wave and THz Electronics. |
| Record Nr. | UNINA-9910366590603321 |
| Cham : , : Springer International Publishing : , : Imprint : Springer, , 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Iron-based superconductors : materials, properties, and mechanisms / edoited by Nan-Li Wang, Hideo Hosono, Pengcheng Dai
| Iron-based superconductors : materials, properties, and mechanisms / edoited by Nan-Li Wang, Hideo Hosono, Pengcheng Dai |
| Pubbl/distr/stampa | Singapore, : Pan Stanford, 2013 |
| Descrizione fisica | XV, 522, 24 p. di tav. color. : ill. ; 24 cm |
| Disciplina |
537.6
537.6223 |
| Soggetto topico | Superconduttori |
| ISBN |
9789814303224
9789814303231 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISANNIO-NAP0572451 |
| Singapore, : Pan Stanford, 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. del Sannio | ||
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Liquid crystalline semiconductors : materials, properties and applications / / Richard J. Bushby, Stephen M. Kelly, Mary O'Neill, editors
| Liquid crystalline semiconductors : materials, properties and applications / / Richard J. Bushby, Stephen M. Kelly, Mary O'Neill, editors |
| Edizione | [1st ed. 2013.] |
| Pubbl/distr/stampa | New York, : Springer, 2013 |
| Descrizione fisica | 1 online resource (280 p.) |
| Disciplina | 537.6223 |
| Altri autori (Persone) |
BushbyRichard J
KellyS. M (Stephen M.) O'NeillMary |
| Collana | Springer series in materials science |
| Soggetto topico | Liquid semiconductors |
| ISBN |
1-283-86548-3
90-481-2873-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Preface -- 1 Introduction -- 2 Charge Transport in Liquid Crystalline Semiconductors -- 3 Columnar Liquid Crystalline Semiconductors -- 4 Synthesis of Columnar Liquid Crystals -- 5 Charge Transport in Reactive Mesogens and Liquid Crystal Polymer Networks -- 6 Optical Properties of Liquid Crystals -- 7 Organic Light-Emitting diodes (OLEDs) and OLEDs with Polarised Emission -- 8 Liquid Crystals for Organic Photovoltaics -- 9 Liquid Crystals for Organic Field-Effect Transistors. |
| Record Nr. | UNINA-9910438124503321 |
| New York, : Springer, 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Low dimensional semiconductor structures : characterization, modeling and applications / / Hilmi Unlu, Norman J.M. Horing (editors)
| Low dimensional semiconductor structures : characterization, modeling and applications / / Hilmi Unlu, Norman J.M. Horing (editors) |
| Edizione | [1st ed. 2013.] |
| Pubbl/distr/stampa | New York, : Springer, 2013 |
| Descrizione fisica | 1 online resource (173 p.) |
| Disciplina | 537.6223 |
| Altri autori (Persone) |
UnluH (Hilmi)
HoringNorman J. M |
| Collana | Nanoscience and technology |
| Soggetto topico | Low-dimensional semiconductors |
| ISBN |
1-283-61301-8
9786613925466 3-642-28424-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Advances in Low Dimensional Semiconductor Structures -- Modeling of Low Dimensional Semiconductors -- Graphene: Properties and Theory.- Functionalization of Graphene Nanoribbons -- Atom/Molecule Van Der Waals Interaction with Graphene -- Optical Studies of Semiconductor Quantum Dots -- Friedel Sum Rule in One- And Quasi-One-Dimensional Wires -- Effects of Temperature on The Scattering Phases and Density of States in Quantum Wires. |
| Record Nr. | UNINA-9910438105403321 |
| New York, : Springer, 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Low molecular weight organic semiconductors [[electronic resource] /] / Thorsten U. Kampen
| Low molecular weight organic semiconductors [[electronic resource] /] / Thorsten U. Kampen |
| Autore | Kampen Thorsten U |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH Verlag GmbH & Co. KGaA, 2010 |
| Descrizione fisica | 1 online resource (177 p.) |
| Disciplina | 537.6223 |
| Soggetto topico | Semiconductors |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-282-78444-7
9786612784446 3-527-64374-5 3-527-62997-1 3-527-62998-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Low Molecular Weight Organic Semiconductors; Contents; Preface; 1: Introduction; 2: Growth of Thin Films; 3: Structural Analysis; 4: Optical Spectroscopy; 5: Electronic and Chemical Surface Properties; 6: Charge Transport; References; Index |
| Record Nr. | UNINA-9910139195803321 |
Kampen Thorsten U
|
||
| Weinheim, : Wiley-VCH Verlag GmbH & Co. KGaA, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Low molecular weight organic semiconductors [[electronic resource] /] / Thorsten U. Kampen
| Low molecular weight organic semiconductors [[electronic resource] /] / Thorsten U. Kampen |
| Autore | Kampen Thorsten U |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH Verlag GmbH & Co. KGaA, 2010 |
| Descrizione fisica | 1 online resource (177 p.) |
| Disciplina | 537.6223 |
| Soggetto topico | Semiconductors |
| ISBN |
1-282-78444-7
9786612784446 3-527-64374-5 3-527-62997-1 3-527-62998-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Low Molecular Weight Organic Semiconductors; Contents; Preface; 1: Introduction; 2: Growth of Thin Films; 3: Structural Analysis; 4: Optical Spectroscopy; 5: Electronic and Chemical Surface Properties; 6: Charge Transport; References; Index |
| Record Nr. | UNINA-9910830521803321 |
|
Kampen Thorsten U
|
||
| Weinheim, : Wiley-VCH Verlag GmbH & Co. KGaA, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Nitride semiconductor devices [[electronic resource] ] : principles and simulation / / edited by Joachim Piprek
| Nitride semiconductor devices [[electronic resource] ] : principles and simulation / / edited by Joachim Piprek |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH |
| Descrizione fisica | 1 online resource (521 p.) |
| Disciplina |
537.6223
621.38152 |
| Altri autori (Persone) | PiprekJoachim |
| Soggetto topico |
Semiconductors
Nitrides |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-280-92162-5
9786610921621 3-527-61072-3 3-527-61071-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Nitride Semiconductor Devices: Principles and Simulation; Contents; Preface; List of Contributors; Part 1 Material Properties; 1 Introduction; 1.1 A Brief History; 1.2 Unique Material Properties; 1.3 Thermal Parameters; References; 2 Electron Bandstructure Parameters; 2.1 Introduction; 2.2 Band Structure Models; 2.3 Band Parameters; 2.3.1 GaN; 2.3.2 AlN; 2.3.3 InN; 2.3.4 AlGaN; 2.3.5 InGaN; 2.3.6 InAlN; 2.3.7 AlGaInN; 2.3.8 Band Offsets; 2.4 Conclusions; References; 3 Spontaneous and Piezoelectric Polarization: Basic Theory vs. Practical Recipes
3.1 Why Spontaneous Polarization in III-V Nitrides?3.2 Theoretical Prediction of Polarization Properties in AlN, GaN and InN; 3.3 Piezoelectric and Pyroelectric Effects in III-V Nitrides Nanostructures; 3.4 Polarization Properties in Ternary and Quaternary Alloys: Nonlinear Compositional Dependence and Order vs. Disorder Effects; 3.5 Orientational Dependence of Polarization; References; 4 Transport Parameters for Electrons and Holes; 4.1 Introduction; 4.2 Numerical Simulation Model; 4.2.1 Scattering in the Semi-Classical Boltzmann Equation; 4.3 Analytical Models for the Transport Parameters 4.4 GaN Transport Parameters4.4.1 Electron Transport Coefficients; 4.4.2 Hole Transport Coefficients; 4.5 AlN Transport Parameters; 4.5.1 Electron Transport Coefficients; 4.5.2 Hole Transport Coefficients; 4.6 InN Transport Parameters; 4.6.1 Electron Transport Coefficients; 4.6.2 Hole Transport Coefficients; 4.7 Conclusions; References; 5 Optical Constants of Bulk Nitrides; 5.1 Introduction; 5.2 Dielectric Function and Band Structure; 5.2.1 Fundamental Relations; 5.2.2 Valence Band Ordering, Optical Selection Rules and Anisotropy; 5.3 Experimental Results; 5.3.1 InN; 5.3.2 GaN and AlN 5.3.3 AlGaN Alloys5.3.4 In-rich InGaN and InAlN Alloys; 5.4 Modeling of the Dielectric Function; 5.4.1 Analytical Representation of the Dielectric Function; 5.4.2 Calculation of the Dielectric Function for Alloys; 5.4.3 Influence of Electric Fields on the Dielectric Function; References; 6 Intersubband Absorption in AlGaN/GaN Quantum Wells; 6.1 Introduction; 6.2 Theoretical Model; 6.2.1 Spontaneous and Piezoelectric Polarization; 6.3 Numerical Implementation; 6.3.1 Achieving Self-consistency: The Under-Relaxation Method; 6.3.2 Predictor-Corrector Approach 6.4 Absorption Energy in AlGaN-GaN MQWs6.4.1 Numerical Analysis of Periodic AlGaN-GaN MQWs; 6.4.2 Numerical Analysis of Non-periodic AlGaN-GaN MQWs and Comparison with Experimental Results; 6.5 Conclusions; References; 7 Interband Transitions in InGaN Quantum Wells; 7.1 Introduction; 7.2 Theory; 7.2.1 Bandstructure and Wavefunctions; 7.2.2 Semiconductor Bloch Equations; 7.2.3 Semiconductor Luminescence Equations; 7.2.4 Auger Recombination Processes; 7.3 Theory-Experiment Gain Comparison; 7.4 Absorption/Gain; 7.4.1 General Trends; 7.4.2 Structural Dependence; 7.5 Spontaneous Emission 7.6 Auger Recombinations |
| Record Nr. | UNINA-9910144575503321 |
| Weinheim, : Wiley-VCH | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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