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Achieving complete band gaps using low refractive index material [[electronic resource] /] / Dahe Liu, Tianrui Zhai and Zhaona Wang
| Achieving complete band gaps using low refractive index material [[electronic resource] /] / Dahe Liu, Tianrui Zhai and Zhaona Wang |
| Autore | Liu Dahe <1948-> |
| Pubbl/distr/stampa | New York, : Novinka/Nova Science Publishers, c2010 |
| Descrizione fisica | 1 online resource (67 p.) |
| Disciplina | 537.6/22 |
| Altri autori (Persone) |
ZhaiTianrui
WangZhaona |
| Collana | Nanotechnology science and technology |
| Soggetto topico |
Crystal optics
Photonic crystals Refraction |
| Soggetto genere / forma | Electronic books. |
| ISBN | 1-61761-041-0 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Introduction -- Complex diamond structure -- Self-simulating structure -- Conclusion. |
| Record Nr. | UNINA-9910461391103321 |
Liu Dahe <1948->
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| New York, : Novinka/Nova Science Publishers, c2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Achieving complete band gaps using low refractive index material [[electronic resource] /] / Dahe Liu, Tianrui Zhai and Zhaona Wang
| Achieving complete band gaps using low refractive index material [[electronic resource] /] / Dahe Liu, Tianrui Zhai and Zhaona Wang |
| Autore | Liu Dahe <1948-> |
| Pubbl/distr/stampa | New York, : Novinka/Nova Science Publishers, c2010 |
| Descrizione fisica | 1 online resource (67 p.) |
| Disciplina | 537.6/22 |
| Altri autori (Persone) |
ZhaiTianrui
WangZhaona |
| Collana | Nanotechnology science and technology |
| Soggetto topico |
Crystal optics
Photonic crystals Refraction |
| ISBN | 1-61761-041-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Introduction -- Complex diamond structure -- Self-simulating structure -- Conclusion. |
| Record Nr. | UNINA-9910790274203321 |
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Liu Dahe <1948->
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| New York, : Novinka/Nova Science Publishers, c2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Effets de plasmas dans les solides. Plasma effects in solids
| Effets de plasmas dans les solides. Plasma effects in solids |
| Autore | Symposium on Plasma Effects in Solids <1964 ; Paris, France> |
| Pubbl/distr/stampa | New York, Academic Press[1965] |
| Descrizione fisica | xii, 221 p. illus. 25 cm |
| Disciplina | 537.6/22 |
| Collana |
Proceedings (International Conference on the Physics of Semiconductors) ; 7th, v. 2
7th International Conference on the Physics of Semiconductors [Proceedings] 2 |
| Soggetto topico |
Plasma (Ionized gases)
Solids |
| Classificazione |
LC QC612.S4
53.7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNISALENTO-991001997829707536 |
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Symposium on Plasma Effects in Solids <1964 ; Paris, France>
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| New York, Academic Press[1965] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. del Salento | ||
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Effets des rayonnements sur les semiconducteurs : 7ème Congrès International de physique des semiconducteurs = Radiation damage in semiconductors : 7th International Conference on the Physics of Semiconductors, Paris-Royaumont, 1964
| Effets des rayonnements sur les semiconducteurs : 7ème Congrès International de physique des semiconducteurs = Radiation damage in semiconductors : 7th International Conference on the Physics of Semiconductors, Paris-Royaumont, 1964 |
| Autore | International Conference on the Physics of Semiconductors <7th ; 1964 ; Paris, France> |
| Pubbl/distr/stampa | New York, Academic Press[1965] |
| Descrizione fisica | xiv, 426 p. illus. 25 cm |
| Disciplina | 537.6/22 |
| Collana | 7e Congrès international de physique des semiconducteurs ; 3 |
| Soggetto topico | Semiconductors - Effect of radiation on |
| Classificazione |
LC QC612.S4
53.7.16 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | fre |
| Record Nr. | UNISALENTO-991001997869707536 |
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International Conference on the Physics of Semiconductors <7th ; 1964 ; Paris, France>
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| New York, Academic Press[1965] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. del Salento | ||
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Epioptics-9 [[electronic resource] ] : proceedings of the 39th course of the International School of Solid State Physics : Erice, Italy, 20-26 July 2006 / / editor, Antonio Cricenti
| Epioptics-9 [[electronic resource] ] : proceedings of the 39th course of the International School of Solid State Physics : Erice, Italy, 20-26 July 2006 / / editor, Antonio Cricenti |
| Pubbl/distr/stampa | Singapore ; ; Hackensack, N.J., : World Scientific, c2008 |
| Descrizione fisica | viii, 180 p. : ill |
| Disciplina | 537.6/22 |
| Altri autori (Persone) | CricentiAntonio |
| Collana | The science and culture series. Physics |
| Soggetto topico |
Semiconductors - Surfaces - Optical properties
Surfaces (Physics) - Optical properties Spectrum analysis |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-281-93433-X
9786611934330 981-279-403-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Longitudinal gauge theory of surface second harmonic generation / Bemardo S. Mendoza -- Parameter-free calculations of optical properties for systems with magnetic ordering or three-dimensional confinement / F. Bechstedt ... [et al.] -- Excited state properties calculations: from 0 to 3 dimensional systems / M. Marsili ... [et al.] -- Dielectric response and electron energy loss spectra of an oxidized Si(100)-(2 x 2) surface / L. Caramella, G. Onida, C. Hogan -- Dielectric function of the Si(113)3 x 2ADI surface from ab-initio methods / K. Ga�al-Nagy, G. Onida -- Modeling of hydrogenated amorphous silicon (a-Si:H) thin films prepared by the saddle field glow discharge method for photovoltaic applications / A. V. Sachenko ... [et al.] -- High spatial resolution raman scattering for nano-structures / E. Speiser ... [et al.] -- Investigation of compositional disorder in GaAs[symbol]-N[symbol]:H / R. Trotta ... [et al.] -- Vibrational properties and the miniband effect in InGaAs/InP superlattices / A. D. Rodrigues ... [et al.] -- Electronic and optical properties of ZnO between 3 and 32 eV / M. Rakel ... [et al.] -- Order and clusters in model membranes: detection and characterization by infrared scanning near-field microscopy / J. Generosi ... [et al.] -- Chemical and magnetic properties of NiO thin films epitaxially grown on Fe(OO1) / A. Brambilla -- Nonlinear magneto-optical probing of magnetic nanostructures: observation of NiO(111) growth on a Ni(001) single crystal / V. K. Valev, A. Kirilyuk, Th. Rasing -- Photoluminescence under magnetic field and hydrostatic pressure in GaAs[symbol]-N[symbol] for probing the compositional dependence of carrier effective mass and gyromagnetic factor / G. Pettinari ... [et al.] -- Probing the dispersion of surface phonons by light scattering / G. Benedek, J. P. Toennies. |
| Record Nr. | UNINA-9910453542403321 |
| Singapore ; ; Hackensack, N.J., : World Scientific, c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Epioptics-9 [[electronic resource] ] : proceedings of the 39th course of the International School of Solid State Physics : Erice, Italy, 20-26 July 2006 / / editor, Antonio Cricenti
| Epioptics-9 [[electronic resource] ] : proceedings of the 39th course of the International School of Solid State Physics : Erice, Italy, 20-26 July 2006 / / editor, Antonio Cricenti |
| Pubbl/distr/stampa | Singapore ; ; Hackensack, N.J., : World Scientific, c2008 |
| Descrizione fisica | viii, 180 p. : ill |
| Disciplina | 537.6/22 |
| Altri autori (Persone) | CricentiAntonio |
| Collana | The science and culture series. Physics |
| Soggetto topico |
Semiconductors - Surfaces - Optical properties
Surfaces (Physics) - Optical properties Spectrum analysis |
| ISBN |
1-281-93433-X
9786611934330 981-279-403-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Longitudinal gauge theory of surface second harmonic generation / Bemardo S. Mendoza -- Parameter-free calculations of optical properties for systems with magnetic ordering or three-dimensional confinement / F. Bechstedt ... [et al.] -- Excited state properties calculations: from 0 to 3 dimensional systems / M. Marsili ... [et al.] -- Dielectric response and electron energy loss spectra of an oxidized Si(100)-(2 x 2) surface / L. Caramella, G. Onida, C. Hogan -- Dielectric function of the Si(113)3 x 2ADI surface from ab-initio methods / K. Ga�al-Nagy, G. Onida -- Modeling of hydrogenated amorphous silicon (a-Si:H) thin films prepared by the saddle field glow discharge method for photovoltaic applications / A. V. Sachenko ... [et al.] -- High spatial resolution raman scattering for nano-structures / E. Speiser ... [et al.] -- Investigation of compositional disorder in GaAs[symbol]-N[symbol]:H / R. Trotta ... [et al.] -- Vibrational properties and the miniband effect in InGaAs/InP superlattices / A. D. Rodrigues ... [et al.] -- Electronic and optical properties of ZnO between 3 and 32 eV / M. Rakel ... [et al.] -- Order and clusters in model membranes: detection and characterization by infrared scanning near-field microscopy / J. Generosi ... [et al.] -- Chemical and magnetic properties of NiO thin films epitaxially grown on Fe(OO1) / A. Brambilla -- Nonlinear magneto-optical probing of magnetic nanostructures: observation of NiO(111) growth on a Ni(001) single crystal / V. K. Valev, A. Kirilyuk, Th. Rasing -- Photoluminescence under magnetic field and hydrostatic pressure in GaAs[symbol]-N[symbol] for probing the compositional dependence of carrier effective mass and gyromagnetic factor / G. Pettinari ... [et al.] -- Probing the dispersion of surface phonons by light scattering / G. Benedek, J. P. Toennies. |
| Record Nr. | UNINA-9910782272803321 |
| Singapore ; ; Hackensack, N.J., : World Scientific, c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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An introduction to the physics and electrochemistry of semiconductors : fundamentals and applications / / Maheshwar Sharon
| An introduction to the physics and electrochemistry of semiconductors : fundamentals and applications / / Maheshwar Sharon |
| Autore | Sharon Maheshwar |
| Pubbl/distr/stampa | Hoboken, New Jersey : , : John Wiley & Sons |
| Descrizione fisica | 1 online resource (342 p.) |
| Disciplina | 537.6/22 |
| Soggetto topico |
Semiconductors - Electric properties
Semiconductors - Materials |
| ISBN |
1-119-27435-4
1-119-27434-6 1-119-27436-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Cover; Title Page; Copyright Page; Dedication; Contents; Foreword; Preface; 1 Our Universe and the Sun; 1.1 Formation of the Universe; 1.2 Formation of Stars; 1.2.1 Formation of Energy in the Sun; 1.2.2 Description of the Sun; 1.2.3 Transfer of Solar Rays through the Ozone Layer; 1.2.4 Transfer of Solar Layers through Other Layers; 1.2.5 Effect of Position of the Sun vis-à-vis the Earth; 1.2.6 Distribution of Solar Energy; 1.2.7 Solar Intensity Calculation; 1.3 Summary; Reference; 2 Solar Energy and Its Applications; 2.1 Introduction to a Semiconductor; 2.2 Formation of a Compound
2.2.1 A Classical Approach2.2.2 Why Call It a Band and Not a Level?; 2.2.3 Quantum Chemistry Approach; 2.2.3.1 Wave Nature of an Electron in a Fixed Potential; 2.2.3.2 Wave Nature of an Electron under a Periodically Changing Potential; 2.2.3.3 Concept of a Forbidden Gap in a Material; 2.2.4 Band Model to Explain Conductivity in Solids; 2.2.4.1 Which of the Total Electrons Will Accept the External Energy for Their Excitation?; 2.2.4.2 Density of States; 2.2.4.3 How Do We Find the Numbers of Electrons in These Bands?; 2.2.5 Useful Deductions; 2.2.5.1 Extrinsic Semiconductor 2.2.5.2 Role of Dopants in the Semiconductor2.3 Quantum Theory Approach to Explain the Effect of Doping; 2.3.1 A Mathematical Approach to Understanding This Problem; 2.3.2 Representation of Various Energy Levels in a Semiconductor; 2.4 Types of Carriers in a Semiconductor; 2.4.1 Majority and Minority Carriers; 2.4.2 Direction of Movement of Carriers in a Semiconductor; 2.5 Nature of Band Gaps in Semiconductors; 2.6 Can the Band Gap of a Semiconductor Be Changed?; 2.7 Summary; Further Reading; 3 Theory of Junction Formation; 3.1 Flow of Carriers across the Junction 3.1.1 Why Do Carriers Flow across an Interface When n- and p-Type Semiconductors Are Joined Together with No Air Gap?3.1.2 Does the Vacuum Level Remain Unaltered, and What Is the Significance of Showing a Bend in the Diagram?; 3.1.3 Why Do We Draw a Horizontal or Exponential Line to Represent the Energy Level in the Semiconductor with a Long Line?; 3.1.4 What Are the Impacts of Migration of Carriers toward the Interface?; 3.2 Representing Energy Levels Graphically; 3.3 Depth of Charge Separation at the Interface of n- and p-Type Semiconductors; 3.4 Nature of Potential at the Interface 3.4.1 Does Any Current Flow through the Interface?3.4.2 Effect of Application of External Potential to the p:n Junction Formed by the Two Semiconductors; 3.4.2.1 Flow of Carriers from n-Type to p-Type; 3.4.2.2 Flow of Carriers from p-Type to n-Type; 3.4.2.3 Flow of Current due to Holes; 3.4.2.4 Flow of Current due to Electrons; 3.4.3 What Would Happen If Negative Potential Were Applied to a p-Type Semiconductor?; 3.4.3.1 Flow of Majority Carriers from p- to n-Type Semiconductors; 3.4.3.2 Flow of Majority Carriers from n- to p-Type 3.4.3.3 Flow of Minority Carrier from p- to n-Type Semiconductors |
| Record Nr. | UNINA-9910135020203321 |
|
Sharon Maheshwar
|
||
| Hoboken, New Jersey : , : John Wiley & Sons | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
An introduction to the physics and electrochemistry of semiconductors : fundamentals and applications / / Maheshwar Sharon
| An introduction to the physics and electrochemistry of semiconductors : fundamentals and applications / / Maheshwar Sharon |
| Autore | Sharon Maheshwar |
| Pubbl/distr/stampa | Hoboken, New Jersey : , : John Wiley & Sons |
| Descrizione fisica | 1 online resource (342 p.) |
| Disciplina | 537.6/22 |
| Soggetto topico |
Semiconductors - Electric properties
Semiconductors - Materials |
| ISBN |
1-119-27435-4
1-119-27434-6 1-119-27436-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Cover; Title Page; Copyright Page; Dedication; Contents; Foreword; Preface; 1 Our Universe and the Sun; 1.1 Formation of the Universe; 1.2 Formation of Stars; 1.2.1 Formation of Energy in the Sun; 1.2.2 Description of the Sun; 1.2.3 Transfer of Solar Rays through the Ozone Layer; 1.2.4 Transfer of Solar Layers through Other Layers; 1.2.5 Effect of Position of the Sun vis-à-vis the Earth; 1.2.6 Distribution of Solar Energy; 1.2.7 Solar Intensity Calculation; 1.3 Summary; Reference; 2 Solar Energy and Its Applications; 2.1 Introduction to a Semiconductor; 2.2 Formation of a Compound
2.2.1 A Classical Approach2.2.2 Why Call It a Band and Not a Level?; 2.2.3 Quantum Chemistry Approach; 2.2.3.1 Wave Nature of an Electron in a Fixed Potential; 2.2.3.2 Wave Nature of an Electron under a Periodically Changing Potential; 2.2.3.3 Concept of a Forbidden Gap in a Material; 2.2.4 Band Model to Explain Conductivity in Solids; 2.2.4.1 Which of the Total Electrons Will Accept the External Energy for Their Excitation?; 2.2.4.2 Density of States; 2.2.4.3 How Do We Find the Numbers of Electrons in These Bands?; 2.2.5 Useful Deductions; 2.2.5.1 Extrinsic Semiconductor 2.2.5.2 Role of Dopants in the Semiconductor2.3 Quantum Theory Approach to Explain the Effect of Doping; 2.3.1 A Mathematical Approach to Understanding This Problem; 2.3.2 Representation of Various Energy Levels in a Semiconductor; 2.4 Types of Carriers in a Semiconductor; 2.4.1 Majority and Minority Carriers; 2.4.2 Direction of Movement of Carriers in a Semiconductor; 2.5 Nature of Band Gaps in Semiconductors; 2.6 Can the Band Gap of a Semiconductor Be Changed?; 2.7 Summary; Further Reading; 3 Theory of Junction Formation; 3.1 Flow of Carriers across the Junction 3.1.1 Why Do Carriers Flow across an Interface When n- and p-Type Semiconductors Are Joined Together with No Air Gap?3.1.2 Does the Vacuum Level Remain Unaltered, and What Is the Significance of Showing a Bend in the Diagram?; 3.1.3 Why Do We Draw a Horizontal or Exponential Line to Represent the Energy Level in the Semiconductor with a Long Line?; 3.1.4 What Are the Impacts of Migration of Carriers toward the Interface?; 3.2 Representing Energy Levels Graphically; 3.3 Depth of Charge Separation at the Interface of n- and p-Type Semiconductors; 3.4 Nature of Potential at the Interface 3.4.1 Does Any Current Flow through the Interface?3.4.2 Effect of Application of External Potential to the p:n Junction Formed by the Two Semiconductors; 3.4.2.1 Flow of Carriers from n-Type to p-Type; 3.4.2.2 Flow of Carriers from p-Type to n-Type; 3.4.2.3 Flow of Current due to Holes; 3.4.2.4 Flow of Current due to Electrons; 3.4.3 What Would Happen If Negative Potential Were Applied to a p-Type Semiconductor?; 3.4.3.1 Flow of Majority Carriers from p- to n-Type Semiconductors; 3.4.3.2 Flow of Majority Carriers from n- to p-Type 3.4.3.3 Flow of Minority Carrier from p- to n-Type Semiconductors |
| Record Nr. | UNINA-9910812217703321 |
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Sharon Maheshwar
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| Hoboken, New Jersey : , : John Wiley & Sons | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Low-Dimensional Systems [[electronic resource] ] : Interactions and Transport Properties / / edited by Tobias Brandes
| Low-Dimensional Systems [[electronic resource] ] : Interactions and Transport Properties / / edited by Tobias Brandes |
| Edizione | [1st ed. 2000.] |
| Pubbl/distr/stampa | Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2000 |
| Descrizione fisica | 1 online resource (VII, 219 p.) |
| Disciplina | 537.6/22 |
| Collana | Lecture Notes in Physics |
| Soggetto topico |
Elementary particles (Physics)
Quantum field theory Optics Electrodynamics Nanotechnology Elementary Particles, Quantum Field Theory Classical Electrodynamics |
| ISBN | 3-540-46438-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Transport and Interactions in One Dimension -- Nonequilibrium Mesoscopic Conductors Driven by Reservoirs -- A Linear Response Theory of 1D-Electron Transport Based on Landauer Type Model -- Gapped Phases of Quantum Wires -- Interaction Effects in One-Dimensional Semiconductor Systems -- Correlated Electrons in Carbon Nanotubes -- Bosonization Theory of the Resonant Raman Spectra of Quantum Wires -- Transport and Interactions in Zero and Two Dimensions -- An Introduction to Real-Time Renormalization Group -- Spin States and Transport in Correlated Electron Systems -- Non-linear Transport in Quantum-Hall Smectics -- Thermodynamics of Quantum Hall Ferromagnets. |
| Altri titoli varianti | Lectures of a Workshop Held in Hamburg, Germany, July 27-28, 1999 |
| Record Nr. | UNISA-996466798303316 |
| Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2000 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
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Low-Dimensional Systems : Interactions and Transport Properties / / edited by Tobias Brandes
| Low-Dimensional Systems : Interactions and Transport Properties / / edited by Tobias Brandes |
| Edizione | [1st ed. 2000.] |
| Pubbl/distr/stampa | Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2000 |
| Descrizione fisica | 1 online resource (VII, 219 p.) |
| Disciplina | 537.6/22 |
| Collana | Lecture Notes in Physics |
| Soggetto topico |
Particles (Nuclear physics)
Quantum field theory Optics Electrodynamics Nanotechnology Elementary Particles, Quantum Field Theory Classical Electrodynamics |
| ISBN | 3-540-46438-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Transport and Interactions in One Dimension -- Nonequilibrium Mesoscopic Conductors Driven by Reservoirs -- A Linear Response Theory of 1D-Electron Transport Based on Landauer Type Model -- Gapped Phases of Quantum Wires -- Interaction Effects in One-Dimensional Semiconductor Systems -- Correlated Electrons in Carbon Nanotubes -- Bosonization Theory of the Resonant Raman Spectra of Quantum Wires -- Transport and Interactions in Zero and Two Dimensions -- An Introduction to Real-Time Renormalization Group -- Spin States and Transport in Correlated Electron Systems -- Non-linear Transport in Quantum-Hall Smectics -- Thermodynamics of Quantum Hall Ferromagnets. |
| Altri titoli varianti | Lectures of a Workshop Held in Hamburg, Germany, July 27-28, 1999 |
| Record Nr. | UNINA-9910139818403321 |
| Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2000 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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