Advanced interconnects for ULSI technology [[electronic resource] /] / edited by Mikhail Baklanov, Paul S. Ho and Ehrenfried Zschech |
Edizione | [2nd ed.] |
Pubbl/distr/stampa | Chichester, West Susex, : Wiley, 2012 |
Descrizione fisica | 1 online resource (615 p.) |
Disciplina | 621.39/5 |
Altri autori (Persone) |
BaklanovMikhail
HoP. S ZschechEhrenfried |
Soggetto topico |
Integrated circuits - Ultra large scale integration
Interconnects (Integrated circuit technology) |
ISBN |
1-119-96686-8
1-119-96367-2 1-280-59080-7 9786613620637 1-119-96324-9 |
Classificazione | TEC008050 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
Advanced Interconnects for ULSI Technology; Contents; About the Editors; List of Contributors; Preface; Abbreviations; Section I Low-k Materials; 1 Low-k Materials: Recent Advances; 1.1 Introduction; 1.2 Integration Challenges; 1.2.1 Process-Induced Damage; 1.2.2 Mechanical Properties; 1.3 Processing Approaches to Existing Integration Issues; 1.3.1 Post-deposition Treatments; 1.3.2 Prevention or Repair of Plasma-Induced Processing Damage; 1.3.3 Multilayer Structures; 1.4 Material Advances to Overcome Current Limitations; 1.4.1 Silica Zeolites; 1.4.2 Hybrid Organic-Inorganic: Oxycarbosilanes
1.5 ConclusionReferences; 2 Ultra-Low-k by CVD: Deposition and Curing; 2.1 Introduction; 2.2 Porogen Approach by PECVD; 2.2.1 Precursors and Deposition Conditions; 2.2.2 Mystery Still Unsolved: From Porogens to Pores; 2.3 UV Curing; 2.3.1 General Overview of Curing; 2.3.2 UV Curing Mechanisms; 2.4 Impact of Curing on Structure and Physical Properties: Benefits of UV Curing; 2.4.1 Porosity; 2.4.2 Chemical Structure and Mechanical Properties; 2.4.3 Electrical Properties; 2.5 Limit/Issues with the Porogen Approach; 2.5.1 Porosity Creation Limit; 2.5.2 Porogen Residues; 2.6 Future of CVD Low-k 2.6.1 New Matrix Precursor2.6.2 Other Deposition Strategies; 2.6.3 New Deposition Techniques; 2.7 Material Engineering: Adaptation to Integration Schemes; 2.8 Conclusion; References; 3 Plasma Processing of Low-k Dielectrics; 3.1 Introduction; 3.2 Materials and Equipment; 3.3 Process Results Characterization; 3.4 Interaction of Low-k Dielectrics with Plasma; 3.4.1 Low-k Etch Chemistries; 3.4.2 Patterning Strategies and Masking Materials; 3.4.3 Etch Mechanisms; 3.5 Mechanisms of Plasma Damage; 3.5.1 Gap Structure Studies; 3.5.2 Effect of Radical Density; 3.5.3 Effect of Ion Energy 3.5.4 Effect of Photon Energy and Intensity3.5.5 Plasma Damage by Oxidative Radicals; 3.5.6 Hydrogen-Based Plasma; 3.5.7 Minimization of Plasma Damage; 3.6 Dielectric Recovery; 3.6.1 CH4 Beam Treatment; 3.6.2 Dielectric Recovery by Silylation; 3.6.3 UV Radiation; 3.7 Conclusions; References; 4 Wet Clean Applications in Porous Low-k Patterning Processes; 4.1 Introduction; 4.2 Silica and Porous Hybrid Dielectric Materials; 4.3 Impact of Plasma and Subsequent Wet Clean Processes on the Stability of Porous Low-k Dielectrics; 4.3.1 Stability in Pure Chemical Solutions 4.3.2 Stability in Commercial Chemistries4.3.3 Hydrophobicity of Hybrid Low-k Materials; 4.4 Removal of Post-Etch Residues and Copper Surface Cleaning; 4.5 Plasma Modification and Removal of Post-Etch 193 nm Photoresist; 4.5.1 Modification of 193 nm Photoresist by Plasma Etch; 4.5.2 Wet Removal of 193 nm Photoresist; Acknowledgments; References; Section II Conductive Layers and Barriers; 5 Copper Electroplating for On-Chip Metallization; 5.1 Introduction; 5.2 Copper Electroplating Techniques; 5.3 Copper Electroplating Superfill; 5.3.1 The Role of Accelerator; 5.3.2 The Role of Suppressor 5.3.3 The Role of Leveler |
Record Nr. | UNINA-9910141346803321 |
Chichester, West Susex, : Wiley, 2012 | ||
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Lo trovi qui: Univ. Federico II | ||
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Advanced interconnects for ULSI technology [[electronic resource] /] / edited by Mikhail Baklanov, Paul S. Ho and Ehrenfried Zschech |
Edizione | [2nd ed.] |
Pubbl/distr/stampa | Chichester, West Susex, : Wiley, 2012 |
Descrizione fisica | 1 online resource (615 p.) |
Disciplina | 621.39/5 |
Altri autori (Persone) |
BaklanovMikhail
HoP. S ZschechEhrenfried |
Soggetto topico |
Integrated circuits - Ultra large scale integration
Interconnects (Integrated circuit technology) |
ISBN |
1-119-96686-8
1-119-96367-2 1-280-59080-7 9786613620637 1-119-96324-9 |
Classificazione | TEC008050 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto |
Advanced Interconnects for ULSI Technology; Contents; About the Editors; List of Contributors; Preface; Abbreviations; Section I Low-k Materials; 1 Low-k Materials: Recent Advances; 1.1 Introduction; 1.2 Integration Challenges; 1.2.1 Process-Induced Damage; 1.2.2 Mechanical Properties; 1.3 Processing Approaches to Existing Integration Issues; 1.3.1 Post-deposition Treatments; 1.3.2 Prevention or Repair of Plasma-Induced Processing Damage; 1.3.3 Multilayer Structures; 1.4 Material Advances to Overcome Current Limitations; 1.4.1 Silica Zeolites; 1.4.2 Hybrid Organic-Inorganic: Oxycarbosilanes
1.5 ConclusionReferences; 2 Ultra-Low-k by CVD: Deposition and Curing; 2.1 Introduction; 2.2 Porogen Approach by PECVD; 2.2.1 Precursors and Deposition Conditions; 2.2.2 Mystery Still Unsolved: From Porogens to Pores; 2.3 UV Curing; 2.3.1 General Overview of Curing; 2.3.2 UV Curing Mechanisms; 2.4 Impact of Curing on Structure and Physical Properties: Benefits of UV Curing; 2.4.1 Porosity; 2.4.2 Chemical Structure and Mechanical Properties; 2.4.3 Electrical Properties; 2.5 Limit/Issues with the Porogen Approach; 2.5.1 Porosity Creation Limit; 2.5.2 Porogen Residues; 2.6 Future of CVD Low-k 2.6.1 New Matrix Precursor2.6.2 Other Deposition Strategies; 2.6.3 New Deposition Techniques; 2.7 Material Engineering: Adaptation to Integration Schemes; 2.8 Conclusion; References; 3 Plasma Processing of Low-k Dielectrics; 3.1 Introduction; 3.2 Materials and Equipment; 3.3 Process Results Characterization; 3.4 Interaction of Low-k Dielectrics with Plasma; 3.4.1 Low-k Etch Chemistries; 3.4.2 Patterning Strategies and Masking Materials; 3.4.3 Etch Mechanisms; 3.5 Mechanisms of Plasma Damage; 3.5.1 Gap Structure Studies; 3.5.2 Effect of Radical Density; 3.5.3 Effect of Ion Energy 3.5.4 Effect of Photon Energy and Intensity3.5.5 Plasma Damage by Oxidative Radicals; 3.5.6 Hydrogen-Based Plasma; 3.5.7 Minimization of Plasma Damage; 3.6 Dielectric Recovery; 3.6.1 CH4 Beam Treatment; 3.6.2 Dielectric Recovery by Silylation; 3.6.3 UV Radiation; 3.7 Conclusions; References; 4 Wet Clean Applications in Porous Low-k Patterning Processes; 4.1 Introduction; 4.2 Silica and Porous Hybrid Dielectric Materials; 4.3 Impact of Plasma and Subsequent Wet Clean Processes on the Stability of Porous Low-k Dielectrics; 4.3.1 Stability in Pure Chemical Solutions 4.3.2 Stability in Commercial Chemistries4.3.3 Hydrophobicity of Hybrid Low-k Materials; 4.4 Removal of Post-Etch Residues and Copper Surface Cleaning; 4.5 Plasma Modification and Removal of Post-Etch 193 nm Photoresist; 4.5.1 Modification of 193 nm Photoresist by Plasma Etch; 4.5.2 Wet Removal of 193 nm Photoresist; Acknowledgments; References; Section II Conductive Layers and Barriers; 5 Copper Electroplating for On-Chip Metallization; 5.1 Introduction; 5.2 Copper Electroplating Techniques; 5.3 Copper Electroplating Superfill; 5.3.1 The Role of Accelerator; 5.3.2 The Role of Suppressor 5.3.3 The Role of Leveler |
Record Nr. | UNINA-9910825297303321 |
Chichester, West Susex, : Wiley, 2012 | ||
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Lo trovi qui: Univ. Federico II | ||
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Characterization of Nanomaterials: Selected Papers from 6th Dresden Nanoanalysis Symposiumc |
Autore | Zschech Ehrenfried |
Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
Descrizione fisica | 1 electronic resource (139 p.) |
Soggetto topico | Technology: general issues |
Soggetto non controllato |
physical vapor deposition
magnetron sputtering AlN/Al coating silicon substrate residual stresses wafer curvature method nanoscale residual stress profiling indentation failure modes nanoindentation adhesion intermetallic phases growth kinetics Al-Ni system zinc oxide nanoparticles paper transistors printed electronics electrolyte-gated transistors microwave synthesis oxide dissociation doping rare earth ions upconversion liquid alloys 2D materials thin films Ga-Sn-Zn alloys gallium alloys nanoanalysis lithium-ion nickel-manganese-cobalt oxide (NMC) leaching recycling recover degradation SEM-EDX Raman spectroscopy resistive switching memories multi-level cell copper oxide grain boundaries aluminum oxide p-type TFT p-type oxide semiconductors SnO electrical properties oxide structure analysis ToF-SIMS 3D imaging compositional depth profiling high aspect ratio (HAR) structures silicon doped hafnium oxide (HSO) ALD deposition lateral high aspect ratio (LHAR) ToF-SIMS analysis |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Altri titoli varianti | Characterization of Nanomaterials |
Record Nr. | UNINA-9910557701103321 |
Zschech Ehrenfried
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Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
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Lo trovi qui: Univ. Federico II | ||
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