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III-Nitride LEDs : from UV to green / / Shengjun Zhou and Sheng Liu
| III-Nitride LEDs : from UV to green / / Shengjun Zhou and Sheng Liu |
| Autore | Zhou Shengjun <1958-> |
| Pubbl/distr/stampa | Gateway East, Singapore : , : Springer, , [2022] |
| Descrizione fisica | 1 online resource (244 pages) |
| Disciplina | 621.381522 |
| Collana | Advances in Optics and Optoelectronics. |
| Soggetto topico |
Nitrides
Light emitting diodes |
| ISBN | 981-19-0436-7 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Intro -- Preface -- Contents -- 1 Physics of III-Nitride Light-Emitting Diodes -- 1.1 History of III-Nitride LEDs -- 1.2 Mechanisms of III-Nitride LEDs -- 1.3 Radiative Recombination and Non-radiative Recombination -- 1.4 Internal Quantum Efficiency -- 1.5 Light Extraction Efficiency and External Quantum Efficiency -- References -- 2 Epitaxial Growth of III-Nitride LEDs -- 2.1 III-Nitride Blue LEDs -- 2.2 III-Nitride Green LEDs -- 2.2.1 InGaN/GaN Superlattice -- 2.2.2 Stacked GaN/AlN Last Quantum Barrier -- 2.3 III-Nitride Ultraviolet LEDs -- 2.3.1 Sputtered AlN Nucleation Layer -- 2.3.2 Effect of PSS on UV LED -- 2.3.3 Patterned Sapphire with Silica Array -- 2.3.4 Isoelectronic Doping -- 2.3.5 InAlGaN/AlGaN Electron Blocking Layer -- 2.3.6 Graded Al-Content AlGaN Insertion Layer -- References -- 3 High-Efficiency Top-Emitting III-Nitride LEDs -- 3.1 Light Extraction Microstructure -- 3.1.1 PSS and Patterned ITO -- 3.1.2 Double Layer ITO -- 3.1.3 3D Patterned ITO and Wavy Sidewalls -- 3.1.4 Roughened Sidewalls -- 3.1.5 Air Voids Structure -- 3.2 Current Blocking Layer -- 3.2.1 SiO2 Current Blocking Layer -- 3.2.2 Patterned Current Blocking Layer -- 3.2.3 Reflective Current Blocking Layer -- 3.3 Back Reflector -- 3.4 Low Optical Loss Electrode Structure -- 3.5 Ni/Au Wire Grid Transparent Conductive Electrodes -- References -- 4 Flip-Chip III-Nitride LEDs -- 4.1 Via-Hole-Based Two-Level Metallization Electrodes -- 4.2 Dielectric DBR -- 4.3 Comparison of Flip-Chip LEDs and Top-Emitting LEDs -- 4.4 Ag/TiW, Ni/Ag and ITO/DBR Ohmic Contacts -- 4.5 High-Power Flip-Chip LEDs -- 4.6 Double-Layer Electrode and Hybrid Reflector -- 4.7 Mini/Micro-LED -- 4.7.1 Prism-Structured Sidewall of Mini-LED -- 4.7.2 Light Extraction Analysis of Micro-LED -- References -- 5 High Voltage and Vertical LEDs -- 5.1 Direct Current High Voltage LED.
5.2 Alternating Current High Voltage LED -- 5.3 Comparison of DC-HV LED and AC-HV LED -- 5.4 Vertical LEDs -- References -- 6 Device Reliability and Measurement -- 6.1 Influence of Dislocation Density on Device Reliability -- 6.2 Forward Leakage Current -- 6.3 Reverse Leakage Current -- 6.4 Pad Luster Consistency -- 6.5 Transient Measurement of LED Characteristic Parameters -- References. |
| Record Nr. | UNISA-996475870103316 |
Zhou Shengjun <1958->
|
||
| Gateway East, Singapore : , : Springer, , [2022] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
III-Nitride LEDs : from UV to green / / Shengjun Zhou and Sheng Liu
| III-Nitride LEDs : from UV to green / / Shengjun Zhou and Sheng Liu |
| Autore | Zhou Shengjun <1958-> |
| Pubbl/distr/stampa | Gateway East, Singapore : , : Springer, , [2022] |
| Descrizione fisica | 1 online resource (244 pages) |
| Disciplina | 621.381522 |
| Collana | Advances in Optics and Optoelectronics. |
| Soggetto topico |
Nitrides
Light emitting diodes |
| ISBN | 981-19-0436-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Intro -- Preface -- Contents -- 1 Physics of III-Nitride Light-Emitting Diodes -- 1.1 History of III-Nitride LEDs -- 1.2 Mechanisms of III-Nitride LEDs -- 1.3 Radiative Recombination and Non-radiative Recombination -- 1.4 Internal Quantum Efficiency -- 1.5 Light Extraction Efficiency and External Quantum Efficiency -- References -- 2 Epitaxial Growth of III-Nitride LEDs -- 2.1 III-Nitride Blue LEDs -- 2.2 III-Nitride Green LEDs -- 2.2.1 InGaN/GaN Superlattice -- 2.2.2 Stacked GaN/AlN Last Quantum Barrier -- 2.3 III-Nitride Ultraviolet LEDs -- 2.3.1 Sputtered AlN Nucleation Layer -- 2.3.2 Effect of PSS on UV LED -- 2.3.3 Patterned Sapphire with Silica Array -- 2.3.4 Isoelectronic Doping -- 2.3.5 InAlGaN/AlGaN Electron Blocking Layer -- 2.3.6 Graded Al-Content AlGaN Insertion Layer -- References -- 3 High-Efficiency Top-Emitting III-Nitride LEDs -- 3.1 Light Extraction Microstructure -- 3.1.1 PSS and Patterned ITO -- 3.1.2 Double Layer ITO -- 3.1.3 3D Patterned ITO and Wavy Sidewalls -- 3.1.4 Roughened Sidewalls -- 3.1.5 Air Voids Structure -- 3.2 Current Blocking Layer -- 3.2.1 SiO2 Current Blocking Layer -- 3.2.2 Patterned Current Blocking Layer -- 3.2.3 Reflective Current Blocking Layer -- 3.3 Back Reflector -- 3.4 Low Optical Loss Electrode Structure -- 3.5 Ni/Au Wire Grid Transparent Conductive Electrodes -- References -- 4 Flip-Chip III-Nitride LEDs -- 4.1 Via-Hole-Based Two-Level Metallization Electrodes -- 4.2 Dielectric DBR -- 4.3 Comparison of Flip-Chip LEDs and Top-Emitting LEDs -- 4.4 Ag/TiW, Ni/Ag and ITO/DBR Ohmic Contacts -- 4.5 High-Power Flip-Chip LEDs -- 4.6 Double-Layer Electrode and Hybrid Reflector -- 4.7 Mini/Micro-LED -- 4.7.1 Prism-Structured Sidewall of Mini-LED -- 4.7.2 Light Extraction Analysis of Micro-LED -- References -- 5 High Voltage and Vertical LEDs -- 5.1 Direct Current High Voltage LED.
5.2 Alternating Current High Voltage LED -- 5.3 Comparison of DC-HV LED and AC-HV LED -- 5.4 Vertical LEDs -- References -- 6 Device Reliability and Measurement -- 6.1 Influence of Dislocation Density on Device Reliability -- 6.2 Forward Leakage Current -- 6.3 Reverse Leakage Current -- 6.4 Pad Luster Consistency -- 6.5 Transient Measurement of LED Characteristic Parameters -- References. |
| Record Nr. | UNINA-9910574043103321 |
|
Zhou Shengjun <1958->
|
||
| Gateway East, Singapore : , : Springer, , [2022] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||