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Future trends in microelectronics : Journey into the unknown / / edited by Serge Luryi, Jimmy Xu, Alexander Zaslavsky
Future trends in microelectronics : Journey into the unknown / / edited by Serge Luryi, Jimmy Xu, Alexander Zaslavsky
Pubbl/distr/stampa Hoboken, New Jersey : , : IEEE Press : , : Wiley, , 2016
Descrizione fisica 1 online resource (383 p.)
Disciplina 621.381
Soggetto topico Microelectronics - Technological innovations
Nanotechnology - Technological innovations
Semiconductors - Technological innovations
ISBN 1-119-06918-1
1-119-06917-3
1-119-06922-X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Cover ; Title Page ; Copyright ; Contents ; List of Contributors ; Preface ; Acknowledgments ; Part I Future of Digital Silicon; 1.1 Prospects of Future Si Technologies in the Data-Driven World; 1. Introduction ; 2. Memory - DRAM ; 3. Memory - NAND ; 4. Logic technology ; 5. CMOS image sensors ; 6. Packaging technology
7. Silicon photonics technology 8. Concluding remarks ; Acknowledgments ; References ; 1.2 How Lithography Enables Moore's Law; 1. Introduction ; 2. Moore's Law and the contribution of lithography ; 3. Lithography technology: past and present ; 4. Lithography technology: future ; 5. Summary
6. Conclusion Acknowledgments ; References ; 1.3 What Happened to Post-CMOS?; 1. Introduction ; 2. General constraints on speed and energy ; 3. Guidelines for success ; 4. Benchmarking and examples ; 5. Discussion ; 6. Conclusion ; Acknowledgments ; References
1.4 Three-Dimensional Integration of Ge and Two-Dimensional Materials for One-Dimensional Devices1. Introduction ; 2. FEOL technology and materials for 3D integration ; 3. Integration of ""more than Moore"" functionality ; 4. Implications of 3D integration at the system level ; 5. Conclusion ; Acknowledgments ; References
1.5 Challenges to Ultralow-Power Semiconductor Device Operation1. Introduction ; 2. Ultimate MOS transistors ; 3. Small slope switches ; 4. Conclusion ; Acknowledgments ; References ; 1.6 A Universal Nonvolatile Processing Environment; 1. Introduction ; 2. Universal nonvolatile processing environment
3. Bias-field-free spin-torque oscillator
Record Nr. UNINA-9910135026603321
Hoboken, New Jersey : , : IEEE Press : , : Wiley, , 2016
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Future trends in microelectronics : Journey into the unknown / / edited by Serge Luryi, Jimmy Xu, Alexander Zaslavsky
Future trends in microelectronics : Journey into the unknown / / edited by Serge Luryi, Jimmy Xu, Alexander Zaslavsky
Pubbl/distr/stampa Hoboken, New Jersey : , : IEEE Press : , : Wiley, , 2016
Descrizione fisica 1 online resource (383 p.)
Disciplina 621.381
Soggetto topico Microelectronics - Technological innovations
Nanotechnology - Technological innovations
Semiconductors - Technological innovations
ISBN 1-119-06918-1
1-119-06917-3
1-119-06922-X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Cover ; Title Page ; Copyright ; Contents ; List of Contributors ; Preface ; Acknowledgments ; Part I Future of Digital Silicon; 1.1 Prospects of Future Si Technologies in the Data-Driven World; 1. Introduction ; 2. Memory - DRAM ; 3. Memory - NAND ; 4. Logic technology ; 5. CMOS image sensors ; 6. Packaging technology
7. Silicon photonics technology 8. Concluding remarks ; Acknowledgments ; References ; 1.2 How Lithography Enables Moore's Law; 1. Introduction ; 2. Moore's Law and the contribution of lithography ; 3. Lithography technology: past and present ; 4. Lithography technology: future ; 5. Summary
6. Conclusion Acknowledgments ; References ; 1.3 What Happened to Post-CMOS?; 1. Introduction ; 2. General constraints on speed and energy ; 3. Guidelines for success ; 4. Benchmarking and examples ; 5. Discussion ; 6. Conclusion ; Acknowledgments ; References
1.4 Three-Dimensional Integration of Ge and Two-Dimensional Materials for One-Dimensional Devices1. Introduction ; 2. FEOL technology and materials for 3D integration ; 3. Integration of ""more than Moore"" functionality ; 4. Implications of 3D integration at the system level ; 5. Conclusion ; Acknowledgments ; References
1.5 Challenges to Ultralow-Power Semiconductor Device Operation1. Introduction ; 2. Ultimate MOS transistors ; 3. Small slope switches ; 4. Conclusion ; Acknowledgments ; References ; 1.6 A Universal Nonvolatile Processing Environment; 1. Introduction ; 2. Universal nonvolatile processing environment
3. Bias-field-free spin-torque oscillator
Record Nr. UNINA-9910819526203321
Hoboken, New Jersey : , : IEEE Press : , : Wiley, , 2016
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Future Trends in Microelectronics [[electronic resource] ] : frontiers and innovations / / edited by Serge Luryi, Jimmy Xu, Alex Zaslavsky
Future Trends in Microelectronics [[electronic resource] ] : frontiers and innovations / / edited by Serge Luryi, Jimmy Xu, Alex Zaslavsky
Pubbl/distr/stampa Hoboken, N.J., : Wiley, c2013
Descrizione fisica 1 online resource (419 p.)
Disciplina 621.381
Altri autori (Persone) LuryiSerge
XuJimmy
ZaslavskyAlex <1963->
Soggetto topico Microelectronics
ISBN 1-118-67818-4
1-118-67829-X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Cover; Title Page; Copyright Page; CONTENTS; Preface; I INNOVATIONS IN ELECTRONICS AND SYSTEMS; Technology Innovation, Reshaping the Microelectronics Industry; Challenges and Limits for Very Low Energy Computation; Getting Rid of the DRAM Capacitor; Physics and Design of Nanoscale Field Effect Diodes for Memory and ESD Protection Applications; Sharp-Switching CMOS-Compatible Devices with High Current Drive; Magnetic Tunnel Junctions with a Composite Free Layer: A New Concept for Future Universal Memory; Silicon Carbide High Temperature Electronics - Is This Rocket Science?
Microchip Post-Processing: There is Plenty of Room at the TopEUV Lithography: Today and Tomorrow; Manufacturability and Nanoelectronic Performance; II OPTOELECTRONICS IN THE NANO AGE; Ultrafast Nanophotonic Devices For Optical Interconnects; Will Optical Communications Meet the Challenges of the Future?; Optical Antennae for Optoelectronics: Impacts, Promises, and Limitations; Spin Modulation: Teaching Lasers New Tricks; III HARVESTING ENERGY FROM THE SUN AND THE ENVIRONMENT; Silicon Photovoltaics: Accelerating to Grid Parity
Two- and Three-Dimensional Numerical Simulation of Advanced Silicon Solar Cells Mechanical Energy Harvesting with Piezoelectric Nanostructures: Great Expectations for Autonomous Systems; Charged Quantum Dots for Photovoltaic Conversion and IR Sensing; Active Optomechanical Resonators; IV PHYSICS FRONTIERS; State of the Art and Prospects for Quantum Computing; Wireless, Implantable Neuroprosthesis: Applying Advanced Technology to Untether the Mind; Correlated Electrons: A Platform for Solid State Devices; Graphene-Based Integrated Electronic, Photonic and Spintronic Circuit
Luttinger Liquid Behavior of Long GaAs Quantum Wires Toward Spin Electronic Devices Based on Semiconductor Nanowires; An Alternative Path for the Fabrication of Self-Assembled III-Nitride Nanowires; In As Nanowires with Surface States as Building Blocks for Tube-Like Electrical Sensing Transistors; Lévy Flight of Photoexcited Minority Carriers in Moderately Doped Semiconductors: Theory and Observation; Terahertz Plasma Oscillations in Field Effect Transistors: Main Ideas and Experimental Facts; INDEX
Record Nr. UNINA-9910139247703321
Hoboken, N.J., : Wiley, c2013
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Future Trends in Microelectronics [[electronic resource] ] : frontiers and innovations / / edited by Serge Luryi, Jimmy Xu, Alex Zaslavsky
Future Trends in Microelectronics [[electronic resource] ] : frontiers and innovations / / edited by Serge Luryi, Jimmy Xu, Alex Zaslavsky
Edizione [1st ed.]
Pubbl/distr/stampa Hoboken, N.J., : Wiley, c2013
Descrizione fisica 1 online resource (419 p.)
Disciplina 621.381
Altri autori (Persone) LuryiSerge
XuJimmy
ZaslavskyAlex <1963->
Soggetto topico Microelectronics
ISBN 1-118-67818-4
1-118-67829-X
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Cover; Title Page; Copyright Page; CONTENTS; Preface; I INNOVATIONS IN ELECTRONICS AND SYSTEMS; Technology Innovation, Reshaping the Microelectronics Industry; Challenges and Limits for Very Low Energy Computation; Getting Rid of the DRAM Capacitor; Physics and Design of Nanoscale Field Effect Diodes for Memory and ESD Protection Applications; Sharp-Switching CMOS-Compatible Devices with High Current Drive; Magnetic Tunnel Junctions with a Composite Free Layer: A New Concept for Future Universal Memory; Silicon Carbide High Temperature Electronics - Is This Rocket Science?
Microchip Post-Processing: There is Plenty of Room at the TopEUV Lithography: Today and Tomorrow; Manufacturability and Nanoelectronic Performance; II OPTOELECTRONICS IN THE NANO AGE; Ultrafast Nanophotonic Devices For Optical Interconnects; Will Optical Communications Meet the Challenges of the Future?; Optical Antennae for Optoelectronics: Impacts, Promises, and Limitations; Spin Modulation: Teaching Lasers New Tricks; III HARVESTING ENERGY FROM THE SUN AND THE ENVIRONMENT; Silicon Photovoltaics: Accelerating to Grid Parity
Two- and Three-Dimensional Numerical Simulation of Advanced Silicon Solar Cells Mechanical Energy Harvesting with Piezoelectric Nanostructures: Great Expectations for Autonomous Systems; Charged Quantum Dots for Photovoltaic Conversion and IR Sensing; Active Optomechanical Resonators; IV PHYSICS FRONTIERS; State of the Art and Prospects for Quantum Computing; Wireless, Implantable Neuroprosthesis: Applying Advanced Technology to Untether the Mind; Correlated Electrons: A Platform for Solid State Devices; Graphene-Based Integrated Electronic, Photonic and Spintronic Circuit
Luttinger Liquid Behavior of Long GaAs Quantum Wires Toward Spin Electronic Devices Based on Semiconductor Nanowires; An Alternative Path for the Fabrication of Self-Assembled III-Nitride Nanowires; In As Nanowires with Surface States as Building Blocks for Tube-Like Electrical Sensing Transistors; Lévy Flight of Photoexcited Minority Carriers in Moderately Doped Semiconductors: Theory and Observation; Terahertz Plasma Oscillations in Field Effect Transistors: Main Ideas and Experimental Facts; INDEX
Record Nr. UNINA-9910828227903321
Hoboken, N.J., : Wiley, c2013
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui