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Ferroelectric-Gate Field Effect Transistor Memories [[electronic resource] ] : Device Physics and Applications / / edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon
| Ferroelectric-Gate Field Effect Transistor Memories [[electronic resource] ] : Device Physics and Applications / / edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon |
| Edizione | [2nd ed. 2020.] |
| Pubbl/distr/stampa | Singapore : , : Springer Singapore : , : Imprint : Springer, , 2020 |
| Descrizione fisica | 1 online resource (XIV, 425 p. 313 illus., 183 illus. in color.) |
| Disciplina | 621.3815284 |
| Collana | Topics in Applied Physics |
| Soggetto topico |
Electronic circuits
Electronics Microelectronics Materials—Surfaces Thin films Surfaces (Physics) Interfaces (Physical sciences) Electronic Circuits and Devices Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Circuits and Systems Surface and Interface Science, Thin Films |
| ISBN | 981-15-1212-4 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | I. Introduction -- II. Practical Characteristics of Inorganic Ferroelectric-gate FETs: Si-Based Ferroelectric-gate Field Effect Transistors -- III. Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors -- Ⅳ Practical Characteristics of Organic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors -- V Practical Characteristics of Organic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors -- VI Practical Characteristics of Organic Ferroelectric-Gate FETs : Ferroelectric-Gate Field Effect Transistors with Flexible Substrates -- Ⅶ Applications and Future Prospects. |
| Record Nr. | UNISA-996418178403316 |
| Singapore : , : Springer Singapore : , : Imprint : Springer, , 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. di Salerno | ||
| ||
Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications / / edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon
| Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications / / edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon |
| Edizione | [2nd ed. 2020.] |
| Pubbl/distr/stampa | Singapore : , : Springer Singapore : , : Imprint : Springer, , 2020 |
| Descrizione fisica | 1 online resource (XIV, 425 p. 313 illus., 183 illus. in color.) |
| Disciplina | 621.3815284 |
| Collana | Topics in Applied Physics |
| Soggetto topico |
Electronic circuits
Electronics Microelectronics Materials—Surfaces Thin films Surfaces (Physics) Interfaces (Physical sciences) Electronic Circuits and Devices Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Circuits and Systems Surface and Interface Science, Thin Films |
| ISBN | 981-15-1212-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | I. Introduction -- II. Practical Characteristics of Inorganic Ferroelectric-gate FETs: Si-Based Ferroelectric-gate Field Effect Transistors -- III. Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors -- Ⅳ Practical Characteristics of Organic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors -- V Practical Characteristics of Organic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors -- VI Practical Characteristics of Organic Ferroelectric-Gate FETs : Ferroelectric-Gate Field Effect Transistors with Flexible Substrates -- Ⅶ Applications and Future Prospects. |
| Record Nr. | UNINA-9910410005303321 |
| Singapore : , : Springer Singapore : , : Imprint : Springer, , 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications / / edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon
| Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications / / edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon |
| Edizione | [1st ed. 2016.] |
| Pubbl/distr/stampa | Dordrecht : , : Springer Netherlands : , : Imprint : Springer, , 2016 |
| Descrizione fisica | 1 online resource (350 p.) |
| Disciplina | 530 |
| Collana | Topics in Applied Physics |
| Soggetto topico |
Electronic circuits
Electronics Microelectronics Materials—Surfaces Thin films Surfaces (Physics) Interfaces (Physical sciences) Electronic Circuits and Devices Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Circuits and Systems Surface and Interface Science, Thin Films |
| ISBN | 94-024-0841-X |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Operation Principle of One-Transistor Type Ferroelectric-gate Field Effect Transistors -- Practical Characteristics of Inorganic Ferroelectric-gate FETs -- Si-Based Ferroelectric-gate Field Effect Transistors -- Thin film-Based Ferroelectric-gate Field Effect Transistors -- Practical Characteristics of Organic Ferroelectric-gate FETs -- Si-Based Ferroelectric-gate Field Effect Transistors -- Thin film-Based Ferroelectric-gate Field Effect Transistors -- Ferroelectric-gate Field Effect Transistors with flexible substrates -- Applications and Future Prospects. |
| Record Nr. | UNINA-9910254628103321 |
| Dordrecht : , : Springer Netherlands : , : Imprint : Springer, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||