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Chemical Solution Deposition of Functional Oxide Thin Films / / edited by Theodor Schneller, Rainer Waser, Marija Kosec, David Payne
| Chemical Solution Deposition of Functional Oxide Thin Films / / edited by Theodor Schneller, Rainer Waser, Marija Kosec, David Payne |
| Edizione | [1st ed. 2013.] |
| Pubbl/distr/stampa | Vienna : , : Springer Vienna : , : Imprint : Springer, , 2013 |
| Descrizione fisica | 1 online resource (801 p.) |
| Disciplina | 660.6 |
| Soggetto topico |
Materials—Surfaces
Thin films Physical chemistry Industrial engineering Production engineering Tribology Corrosion and anti-corrosives Coatings Surfaces and Interfaces, Thin Films Physical Chemistry Industrial and Production Engineering Tribology, Corrosion and Coatings |
| ISBN | 3-211-99311-8 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | Introduction -- Solution Chemistry; Simple alskoxide based precursor systems; Carboxylate based precursor systems; Single-source precursors; Acqueos Precursor Systems; Solution Synthesis Strategies -- Analytical Methods; Introduction; Thermal Analysis; NMR Sepctroscopy; EXAFS; Other Methods (XRM, SEM,TEM;scattering methods at nanocrystalline films); Spin-Coating; Dip Coating; Inkjet Printing and Other Direct Writing Methods(dip point and imprint techniques); Chemical Bath Deposition; Polymer Assisted Deposition -- Processing and Crystallization; Thermodynamics and Heating Processes; Material Systems Dominated by Heterogeneous Nucleation; Material Systems Dominated by Homogeneous Nucleation; Low Temperature Processing; Epitaxial Films; Powder Assisted Film Fabrication; UV-and E-Beam Direct Patterning of Photosensitive CSD Films; Template Controlled Growth -- Functions and Applications; Introduction; Integrated Capacitors; Base Metal Electrodes; Polar Oxide Films for MEMS Applications;Conducting Films and Electrodes; Transparent conducting oxides; Superconducting Films; Porous Films for Gas Sensors; Luminescent Fims -- Appendix; Synthesis for Standard material Systems. |
| Record Nr. | UNINA-9910437801303321 |
| Vienna : , : Springer Vienna : , : Imprint : Springer, , 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Polar oxides : properties, characterization, and imaging / / edited by R. Waser, U. Bottger, and S. Tiedke
| Polar oxides : properties, characterization, and imaging / / edited by R. Waser, U. Bottger, and S. Tiedke |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, c2005 |
| Descrizione fisica | 1 online resource (391 p.) |
| Disciplina | 620.14 |
| Altri autori (Persone) |
WaserRainer
BottgerU (Ulrich) TiedkeS (Stephan) |
| Soggetto topico |
Ceramic materials
Electronic ceramics Civil engineering |
| ISBN |
1-280-52005-1
9786610520053 3-527-60465-0 3-527-60489-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Polar Oxides Properties, Characterization, and Imaging; Contents; Preface; 1 Dielectric Properties of Polar Oxides; 1.1 Introduction; 1.2 Dielectric polarization; 1.2.1 Macroscopic and microscopic view; 1.2.2 Mechanisms of polarization; 1.3 Ferroelectric polarization; 1.4 Theory of Ferroelectric Phase Transition; 1.4.1 Ginzburg-Landau Theory; 1.4.2 Soft Mode Concept; 1.5 Ferroelectric Materials; 1.5.1 Basic Compositions; 1.5.2 Grain Size effects; 1.5.3 Influence of Substitutes and Dopants; 1.6 Ferroelectric Domains; 1.6.1 Reversible and Irreversible Polarization Contributions
1.6.2 Ferroelectric SwitchingBibliography; 2 Piezoelectric Characterization; 2.1 Important piezoelectric constants; 2.2 Measurements in bulk materials; 2.3 Measurements in thin films; 2.4 Conclusions; Bibliography; 3 Electrical Characterization of Ferroelectrics; 3.1 Introduction; 3.2 Measurement methods; 3.2.1 Sawyer Tower method; 3.2.2 Shunt method; 3.2.3 Virtual ground method; 3.2.4 Current step method; 3.3 Measurement types; 3.3.1 Hysteresis loop and characteristic values; 3.3.2 Dynamic hysteresis measurement; 3.3.3 Pulse measurement; 3.3.4 Static hysteresis measurement 3.3.5 Leakage measurement3.3.6 Fatigue measurement; 3.3.7 Imprint measurement; 3.3.8 Retention measurement; 3.3.9 Small signal measurements; Bibliography; 4 Optical Characterization of Ferroelectric Materials; 4.1 Introduction: Light propagation within anisotropic crystals; 4.1.1 Huyghens's construction for uniaxial crystals; 4.1.2 The uniaxial indicatrix; 4.1.3 The biaxial indicatrix; 4.2 The electro-optic effect; 4.2.1 Ferroelectrics have anisotropic electronic bonds: Birefringence; 4.2.2 Applied fields change the optical pathlength: Phase modulators 4.2.3 Optical waveguides improve the device efficiency4.3 Non-linear optics; 4.3.1 Nonlinear optical media; 4.3.2 The nonlinear wave equation; 4.3.3 Second order nonlinear optics; Bibliography; 5 Microwave Properties and Measurement Techniques; 5.1 Introduction; 5.2 Basic relations defining microwave properties of dielectrics and normal/superconducting metals; 5.3 Surface impedance of normal metals; 5.4 Surface impedance of high-temperature superconductor films; 5.5 Microwave properties of dielectric single crystals, ceramics and thin films 5.6 General remarks about microwave material measurements5.7 Non resonant microwave measurement techniques; 5.8 Resonator measurement techniques; 5.9 Conclusions; Bibliography; 6 Advanced X-ray Analysis of Ferroelectrics; 6.1 Introduction; 6.2 Experimental; 6.2.1 X-ray diffractometer; 6.2.2 Method of X-ray diffraction; 6.2.3 Sample preparation; 6.3 Results and discussion; 6.3.1 Structural characterization of PZT 52/48 thin film; 6.3.2 Distinguishing SBTN phase from fluorite-SBTN phase; 6.3.3 Grazing incidence X-ray diffraction study on PZT 52/48 thin films; 6.4 Conclusions; Bibliography 7 Characterization of PZT-Ceramics by High-Resolution X-Ray Analysis |
| Record Nr. | UNINA-9910877086203321 |
| Weinheim, : Wiley-VCH, c2005 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Resistive switching : from fundamentals of nanoionic redox processes to memristive device applications / / edited by Daniele Ielmini and Rainer Waser ; contributors, Hiro Akinaga [and sixty-four others]
| Resistive switching : from fundamentals of nanoionic redox processes to memristive device applications / / edited by Daniele Ielmini and Rainer Waser ; contributors, Hiro Akinaga [and sixty-four others] |
| Pubbl/distr/stampa | Weinheim an der Bergstrasse, Germany : , : Wiley-VCH, , 2016 |
| Descrizione fisica | 1 online resource (954 pages) |
| Disciplina | 621.381 |
| Soggetto topico |
Nanoelectronics
Memristors |
| ISBN |
3-527-68087-X
3-527-68094-2 3-527-68093-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Related Titles; Title Page; Copyright; Table of Contents; Preface; List of Contributors; Chapter 1: Introduction to Nanoionic Elements for Information Technology; 1.1 Concept of Two-Terminal Memristive Elements; 1.2 Memory Applications; 1.3 Logic Circuits; 1.4 Prospects and Challenges; Acknowledgments; References; Chapter 2: ReRAM Cells in the Framework of Two-Terminal Devices; 2.1 Introduction; 2.2 Two-Terminal Device Models; 2.3 Fundamental Description of Electronic Devices with Memory; 2.4 Device Engineer's View on ReRAM Devices as Two-Terminal Elements; 2.5 Conclusions; Acknowledgment
ReferencesChapter 3: Atomic and Electronic Structure of Oxides; 3.1 Introduction; 3.2 Crystal Structures; 3.3 Electronic Structure; 3.4 Material Classes and Characterization of the Electronic States; 3.5 Electronic Structure of Selected Oxides; 3.6 Ellingham Diagram for Binary Oxides; Acknowledgments; References; Chapter 4: Defect Structure of Metal Oxides; 4.1 Definition of Defects; 4.2 General Considerations on the Equilibrium Thermodynamics of Point Defects; 4.3 Definition of Point Defects; 4.4 Space-Charge Effects; 4.5 Case Studies; References; Chapter 5: Ion Transport in Metal Oxides 5.1 Introduction5.2 Macroscopic Definition; 5.3 Microscopic Definition; 5.4 Types of Diffusion Experiments; 5.5 Mass Transport along and across Extended Defects; 5.6 Case Studies; Acknowledgments; References; Chapter 6: Electrical Transport in Transition Metal Oxides; 6.1 Overview; 6.2 Structure of Transition Metal Oxides; 6.3 Models of Electrical Transport; 6.4 Band Insulators; 6.5 Half-Filled Mott Insulators; 6.6 Temperature-Induced Metal-Insulator Transitions in Oxides; References; Chapter 7: Quantum Point Contact Conduction; 7.1 Introduction 7.2 Conductance Quantization in Metallic Nanowires7.3 Conductance Quantization in Electrochemical Metallization Cells; 7.4 Filamentary Conduction and Quantization Effects in Binary Oxides; 7.5 Conclusion and Outlook; References; Chapter 8: Dielectric Breakdown Processes; 8.1 Introduction; 8.2 Basics of Dielectric Breakdown; 8.3 Physics of Defect Generation; 8.4 Breakdown and Oxide Failure Statistics; 8.5 Implications of Breakdown Statistics for ReRAM; 8.6 Chemistry of the Breakdown Path and Inference on Filament Formation; 8.7 Summary and Conclusions; References Chapter 9: Physics and Chemistry of Nanoionic Cells9.1 Introduction; 9.2 Basic Thermodynamics and Heterogeneous Equilibria; 9.3 Phase Boundaries and Boundary Layers; 9.4 Nucleation and Growth; 9.5 Electromotive Force; 9.6 General Transport Processes and Chemical Reactions; 9.7 Solid-State Reactions; 9.8 Electrochemical (Electrode) Reactions; 9.9 Stoichiometry Polarization; Summary; Acknowledgments; References; Chapter 10: Electroforming Processes in Metal Oxide Resistive-Switching Cells; 10.1 Introduction; 10.2 Forming Mechanisms; 10.3 Technical Issues Related to Forming 10.4 Summary and Outlook |
| Record Nr. | UNINA-9910137395803321 |
| Weinheim an der Bergstrasse, Germany : , : Wiley-VCH, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Resistive switching : from fundamentals of nanoionic redox processes to memristive device applications / / edited by Daniele Ielmini and Rainer Waser ; contributors, Hiro Akinaga [and sixty-four others]
| Resistive switching : from fundamentals of nanoionic redox processes to memristive device applications / / edited by Daniele Ielmini and Rainer Waser ; contributors, Hiro Akinaga [and sixty-four others] |
| Pubbl/distr/stampa | Weinheim an der Bergstrasse, Germany : , : Wiley-VCH, , 2016 |
| Descrizione fisica | 1 online resource (954 pages) |
| Disciplina | 621.381 |
| Soggetto topico |
Nanoelectronics
Memristors |
| ISBN |
3-527-68087-X
3-527-68094-2 3-527-68093-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Related Titles; Title Page; Copyright; Table of Contents; Preface; List of Contributors; Chapter 1: Introduction to Nanoionic Elements for Information Technology; 1.1 Concept of Two-Terminal Memristive Elements; 1.2 Memory Applications; 1.3 Logic Circuits; 1.4 Prospects and Challenges; Acknowledgments; References; Chapter 2: ReRAM Cells in the Framework of Two-Terminal Devices; 2.1 Introduction; 2.2 Two-Terminal Device Models; 2.3 Fundamental Description of Electronic Devices with Memory; 2.4 Device Engineer's View on ReRAM Devices as Two-Terminal Elements; 2.5 Conclusions; Acknowledgment
ReferencesChapter 3: Atomic and Electronic Structure of Oxides; 3.1 Introduction; 3.2 Crystal Structures; 3.3 Electronic Structure; 3.4 Material Classes and Characterization of the Electronic States; 3.5 Electronic Structure of Selected Oxides; 3.6 Ellingham Diagram for Binary Oxides; Acknowledgments; References; Chapter 4: Defect Structure of Metal Oxides; 4.1 Definition of Defects; 4.2 General Considerations on the Equilibrium Thermodynamics of Point Defects; 4.3 Definition of Point Defects; 4.4 Space-Charge Effects; 4.5 Case Studies; References; Chapter 5: Ion Transport in Metal Oxides 5.1 Introduction5.2 Macroscopic Definition; 5.3 Microscopic Definition; 5.4 Types of Diffusion Experiments; 5.5 Mass Transport along and across Extended Defects; 5.6 Case Studies; Acknowledgments; References; Chapter 6: Electrical Transport in Transition Metal Oxides; 6.1 Overview; 6.2 Structure of Transition Metal Oxides; 6.3 Models of Electrical Transport; 6.4 Band Insulators; 6.5 Half-Filled Mott Insulators; 6.6 Temperature-Induced Metal-Insulator Transitions in Oxides; References; Chapter 7: Quantum Point Contact Conduction; 7.1 Introduction 7.2 Conductance Quantization in Metallic Nanowires7.3 Conductance Quantization in Electrochemical Metallization Cells; 7.4 Filamentary Conduction and Quantization Effects in Binary Oxides; 7.5 Conclusion and Outlook; References; Chapter 8: Dielectric Breakdown Processes; 8.1 Introduction; 8.2 Basics of Dielectric Breakdown; 8.3 Physics of Defect Generation; 8.4 Breakdown and Oxide Failure Statistics; 8.5 Implications of Breakdown Statistics for ReRAM; 8.6 Chemistry of the Breakdown Path and Inference on Filament Formation; 8.7 Summary and Conclusions; References Chapter 9: Physics and Chemistry of Nanoionic Cells9.1 Introduction; 9.2 Basic Thermodynamics and Heterogeneous Equilibria; 9.3 Phase Boundaries and Boundary Layers; 9.4 Nucleation and Growth; 9.5 Electromotive Force; 9.6 General Transport Processes and Chemical Reactions; 9.7 Solid-State Reactions; 9.8 Electrochemical (Electrode) Reactions; 9.9 Stoichiometry Polarization; Summary; Acknowledgments; References; Chapter 10: Electroforming Processes in Metal Oxide Resistive-Switching Cells; 10.1 Introduction; 10.2 Forming Mechanisms; 10.3 Technical Issues Related to Forming 10.4 Summary and Outlook |
| Record Nr. | UNINA-9910815717603321 |
| Weinheim an der Bergstrasse, Germany : , : Wiley-VCH, , 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||