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Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond : Doctoral Thesis accepted by Chinese Academy of Sciences, Beijing, China / Guilei Wang
| Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond : Doctoral Thesis accepted by Chinese Academy of Sciences, Beijing, China / Guilei Wang |
| Autore | Wang, Guilei |
| Pubbl/distr/stampa | Singapore, : Springer, 2019 |
| Descrizione fisica | xvi, 115 p. : ill. ; 24 cm |
| Soggetto topico | 00A79 (77-XX) - Physics [MSC 2020] |
| Soggetto non controllato |
Pattern dependency
RPCVD Selective epitaxy SiGe Source/drain technology Strain Technology nodes |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Titolo uniforme | |
| Record Nr. | UNICAMPANIA-VAN0219614 |
Wang, Guilei
|
||
| Singapore, : Springer, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Vanvitelli | ||
| ||
Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond : Doctoral Thesis accepted by Chinese Academy of Sciences, Beijing, China / Guilei Wang
| Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond : Doctoral Thesis accepted by Chinese Academy of Sciences, Beijing, China / Guilei Wang |
| Autore | Wang, Guilei |
| Pubbl/distr/stampa | Singapore, : Springer, 2019 |
| Descrizione fisica | xvi, 115 p. : ill. ; 24 cm |
| Soggetto topico | 00A79 (77-XX) - Physics [MSC 2020] |
| Soggetto non controllato |
Pattern dependency
RPCVD Selective epitaxy SiGe Source/drain technology Strain Technology nodes |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Titolo uniforme | |
| Record Nr. | UNICAMPANIA-VAN00219614 |
|
Wang, Guilei
|
||
| Singapore, : Springer, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Vanvitelli | ||
| ||