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Charge-based MOS transistor modeling [[electronic resource] ] : the EKV model for low-power and RF IC design / / Christian C. Enz, Eric A. Vittoz
| Charge-based MOS transistor modeling [[electronic resource] ] : the EKV model for low-power and RF IC design / / Christian C. Enz, Eric A. Vittoz |
| Autore | Enz Christian |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : John Wiley, c2006 |
| Descrizione fisica | 1 online resource (329 p.) |
| Disciplina | 621.3815284 |
| Altri autori (Persone) | VittozEric A. <1938-> |
| Soggetto topico |
Metal oxide semiconductors - Mathematical models
Metal oxide semiconductor field-effect transistors - Mathematical models |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-280-64993-3
9786610649938 0-470-85546-0 0-470-85545-2 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Charge-based MOS Transistor Modeling; Contents; Foreword; Preface; List of Symbols; 1 Introduction; 1.1 The Importance of Device Modeling for IC Design; 1.2 A Short History of the EKV MOS Transistor Model; 1.3 The Book Structure; Part I The Basic Long-Channel Intrinsic Charge-Based Model; 2 Definitions; 2.1 The N-channel Transistor Structure; 2.2 Definition of Charges, Current, Potential, and Electric Fields; 2.3 Transistor Symbol and P-Channel Transistor; 3 The Basic Charge Model; 3.1 Poisson's Equation and Gradual Channel Approximation; 3.2 Surface Potential as a Function of Gate Voltage
3.3 Gate Capacitance3.4 Charge Sheet Approximation; 3.5 Density of Mobile Inverted Charge; 3.5.1 Mobile Charge as a Function of Gate Voltage and Surface Potential; 3.5.2 Mobile Charge as a Function of Channel Voltage and Surface Potential; 3.6 Charge-Potential Linearization; 3.6.1 Linearization of Qi (s); 3.6.2 Linearized Bulk Depletion Charge Qb; 3.6.3 Strong Inversion Approximation; 3.6.4 Evaluation of the Slope Factor; 3.6.5 Compact Model Parameters; 4 Static Drain Current; 4.1 Drain Current Expression; 4.2 Forward and Reverse Current Components; 4.3 Modes of Operation 4.4 Model of Drain Current Based on Charge Linearization4.4.1 Expression Valid for All Levels of Inversion; 4.4.2 Compact Model Parameters; 4.4.3 Inversion Coefficient; 4.4.4 Approximation of the Drain Current in Strong Inversion; 4.4.5 Approximation of the Drain Current in Weak Inversion; 4.4.6 Alternative Continuous Models; 4.5 Fundamental Property: Validity and Application; 4.5.1 Generalization of Drain Current Expression; 4.5.2 Domain of Validity; 4.5.3 Causes of Degradation; 4.5.4 Concept of Pseudo-Resistor; 4.6 Channel Length Modulation; 4.6.1 Effective Channel Length 4.6.2 Weak Inversion4.6.3 Strong Inversion; 4.6.4 Geometrical Effects; 5 The Small-Signal Model; 5.1 The Static Small-Signal Model; 5.1.1 Transconductances; 5.1.2 Residual Output Conductance in Saturation; 5.1.3 Equivalent Circuit; 5.1.4 The Normalized Transconductance to Drain Current Ratio; 5.2 A General NQS Small-Signal Model; 5.3 The QS Dynamic Small-Signal Model; 5.3.1 Intrinsic Capacitances; 5.3.2 Transcapacitances; 5.3.3 Complete QS Circuit; 5.3.4 Domains of Validity of the Different Models; 6 The Noise Model; 6.1 Noise Calculation Methods; 6.1.1 General Expression 6.1.2 Long-Channel Simplification6.2 Low-Frequency Channel Thermal Noise; 6.2.1 Drain Current Thermal Noise PSD; 6.2.2 Thermal Noise Excess Factor Definitions; 6.2.3 Circuit Examples; 6.3 Flicker Noise; 6.3.1 Carrier Number Fluctuations (Mc Worther Model); 6.3.2 Mobility Fluctuations (Hooge Model); 6.3.3 Additional Contributions Due to the Source and Drain Access Resistances; 6.3.4 Total 1/f Noise at the Drain; 6.3.5 Scaling Properties; 6.4 Appendices; Appendix: The Nyquist and Bode Theorems; Appendix: General Noise Expression; 7 Temperature Effects and Matching; 7.1 Introduction 7.2 Temperature Effects |
| Record Nr. | UNINA-9910143747403321 |
Enz Christian
|
||
| Chichester, England ; ; Hoboken, NJ, : John Wiley, c2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Charge-based MOS transistor modeling [[electronic resource] ] : the EKV model for low-power and RF IC design / / Christian C. Enz, Eric A. Vittoz
| Charge-based MOS transistor modeling [[electronic resource] ] : the EKV model for low-power and RF IC design / / Christian C. Enz, Eric A. Vittoz |
| Autore | Enz Christian |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : John Wiley, c2006 |
| Descrizione fisica | 1 online resource (329 p.) |
| Disciplina | 621.3815284 |
| Altri autori (Persone) | VittozEric A. <1938-> |
| Soggetto topico |
Metal oxide semiconductors - Mathematical models
Metal oxide semiconductor field-effect transistors - Mathematical models |
| ISBN |
1-280-64993-3
9786610649938 0-470-85546-0 0-470-85545-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Charge-based MOS Transistor Modeling; Contents; Foreword; Preface; List of Symbols; 1 Introduction; 1.1 The Importance of Device Modeling for IC Design; 1.2 A Short History of the EKV MOS Transistor Model; 1.3 The Book Structure; Part I The Basic Long-Channel Intrinsic Charge-Based Model; 2 Definitions; 2.1 The N-channel Transistor Structure; 2.2 Definition of Charges, Current, Potential, and Electric Fields; 2.3 Transistor Symbol and P-Channel Transistor; 3 The Basic Charge Model; 3.1 Poisson's Equation and Gradual Channel Approximation; 3.2 Surface Potential as a Function of Gate Voltage
3.3 Gate Capacitance3.4 Charge Sheet Approximation; 3.5 Density of Mobile Inverted Charge; 3.5.1 Mobile Charge as a Function of Gate Voltage and Surface Potential; 3.5.2 Mobile Charge as a Function of Channel Voltage and Surface Potential; 3.6 Charge-Potential Linearization; 3.6.1 Linearization of Qi (s); 3.6.2 Linearized Bulk Depletion Charge Qb; 3.6.3 Strong Inversion Approximation; 3.6.4 Evaluation of the Slope Factor; 3.6.5 Compact Model Parameters; 4 Static Drain Current; 4.1 Drain Current Expression; 4.2 Forward and Reverse Current Components; 4.3 Modes of Operation 4.4 Model of Drain Current Based on Charge Linearization4.4.1 Expression Valid for All Levels of Inversion; 4.4.2 Compact Model Parameters; 4.4.3 Inversion Coefficient; 4.4.4 Approximation of the Drain Current in Strong Inversion; 4.4.5 Approximation of the Drain Current in Weak Inversion; 4.4.6 Alternative Continuous Models; 4.5 Fundamental Property: Validity and Application; 4.5.1 Generalization of Drain Current Expression; 4.5.2 Domain of Validity; 4.5.3 Causes of Degradation; 4.5.4 Concept of Pseudo-Resistor; 4.6 Channel Length Modulation; 4.6.1 Effective Channel Length 4.6.2 Weak Inversion4.6.3 Strong Inversion; 4.6.4 Geometrical Effects; 5 The Small-Signal Model; 5.1 The Static Small-Signal Model; 5.1.1 Transconductances; 5.1.2 Residual Output Conductance in Saturation; 5.1.3 Equivalent Circuit; 5.1.4 The Normalized Transconductance to Drain Current Ratio; 5.2 A General NQS Small-Signal Model; 5.3 The QS Dynamic Small-Signal Model; 5.3.1 Intrinsic Capacitances; 5.3.2 Transcapacitances; 5.3.3 Complete QS Circuit; 5.3.4 Domains of Validity of the Different Models; 6 The Noise Model; 6.1 Noise Calculation Methods; 6.1.1 General Expression 6.1.2 Long-Channel Simplification6.2 Low-Frequency Channel Thermal Noise; 6.2.1 Drain Current Thermal Noise PSD; 6.2.2 Thermal Noise Excess Factor Definitions; 6.2.3 Circuit Examples; 6.3 Flicker Noise; 6.3.1 Carrier Number Fluctuations (Mc Worther Model); 6.3.2 Mobility Fluctuations (Hooge Model); 6.3.3 Additional Contributions Due to the Source and Drain Access Resistances; 6.3.4 Total 1/f Noise at the Drain; 6.3.5 Scaling Properties; 6.4 Appendices; Appendix: The Nyquist and Bode Theorems; Appendix: General Noise Expression; 7 Temperature Effects and Matching; 7.1 Introduction 7.2 Temperature Effects |
| Record Nr. | UNINA-9910830878003321 |
|
Enz Christian
|
||
| Chichester, England ; ; Hoboken, NJ, : John Wiley, c2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Charge-based MOS transistor modeling : the EKV model for low-power and RF IC design / / Christian C. Enz, Eric A. Vittoz
| Charge-based MOS transistor modeling : the EKV model for low-power and RF IC design / / Christian C. Enz, Eric A. Vittoz |
| Autore | Enz Christian |
| Pubbl/distr/stampa | Chichester, England ; ; Hoboken, NJ, : John Wiley, c2006 |
| Descrizione fisica | 1 online resource (329 p.) |
| Disciplina | 621.3815/284 |
| Altri autori (Persone) | VittozEric A. <1938-> |
| Soggetto topico |
Metal oxide semiconductors - Mathematical models
Metal oxide semiconductor field-effect transistors - Mathematical models |
| ISBN |
1-280-64993-3
9786610649938 0-470-85546-0 0-470-85545-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Charge-based MOS Transistor Modeling; Contents; Foreword; Preface; List of Symbols; 1 Introduction; 1.1 The Importance of Device Modeling for IC Design; 1.2 A Short History of the EKV MOS Transistor Model; 1.3 The Book Structure; Part I The Basic Long-Channel Intrinsic Charge-Based Model; 2 Definitions; 2.1 The N-channel Transistor Structure; 2.2 Definition of Charges, Current, Potential, and Electric Fields; 2.3 Transistor Symbol and P-Channel Transistor; 3 The Basic Charge Model; 3.1 Poisson's Equation and Gradual Channel Approximation; 3.2 Surface Potential as a Function of Gate Voltage
3.3 Gate Capacitance3.4 Charge Sheet Approximation; 3.5 Density of Mobile Inverted Charge; 3.5.1 Mobile Charge as a Function of Gate Voltage and Surface Potential; 3.5.2 Mobile Charge as a Function of Channel Voltage and Surface Potential; 3.6 Charge-Potential Linearization; 3.6.1 Linearization of Qi (s); 3.6.2 Linearized Bulk Depletion Charge Qb; 3.6.3 Strong Inversion Approximation; 3.6.4 Evaluation of the Slope Factor; 3.6.5 Compact Model Parameters; 4 Static Drain Current; 4.1 Drain Current Expression; 4.2 Forward and Reverse Current Components; 4.3 Modes of Operation 4.4 Model of Drain Current Based on Charge Linearization4.4.1 Expression Valid for All Levels of Inversion; 4.4.2 Compact Model Parameters; 4.4.3 Inversion Coefficient; 4.4.4 Approximation of the Drain Current in Strong Inversion; 4.4.5 Approximation of the Drain Current in Weak Inversion; 4.4.6 Alternative Continuous Models; 4.5 Fundamental Property: Validity and Application; 4.5.1 Generalization of Drain Current Expression; 4.5.2 Domain of Validity; 4.5.3 Causes of Degradation; 4.5.4 Concept of Pseudo-Resistor; 4.6 Channel Length Modulation; 4.6.1 Effective Channel Length 4.6.2 Weak Inversion4.6.3 Strong Inversion; 4.6.4 Geometrical Effects; 5 The Small-Signal Model; 5.1 The Static Small-Signal Model; 5.1.1 Transconductances; 5.1.2 Residual Output Conductance in Saturation; 5.1.3 Equivalent Circuit; 5.1.4 The Normalized Transconductance to Drain Current Ratio; 5.2 A General NQS Small-Signal Model; 5.3 The QS Dynamic Small-Signal Model; 5.3.1 Intrinsic Capacitances; 5.3.2 Transcapacitances; 5.3.3 Complete QS Circuit; 5.3.4 Domains of Validity of the Different Models; 6 The Noise Model; 6.1 Noise Calculation Methods; 6.1.1 General Expression 6.1.2 Long-Channel Simplification6.2 Low-Frequency Channel Thermal Noise; 6.2.1 Drain Current Thermal Noise PSD; 6.2.2 Thermal Noise Excess Factor Definitions; 6.2.3 Circuit Examples; 6.3 Flicker Noise; 6.3.1 Carrier Number Fluctuations (Mc Worther Model); 6.3.2 Mobility Fluctuations (Hooge Model); 6.3.3 Additional Contributions Due to the Source and Drain Access Resistances; 6.3.4 Total 1/f Noise at the Drain; 6.3.5 Scaling Properties; 6.4 Appendices; Appendix: The Nyquist and Bode Theorems; Appendix: General Noise Expression; 7 Temperature Effects and Matching; 7.1 Introduction 7.2 Temperature Effects |
| Record Nr. | UNINA-9910877611303321 |
|
Enz Christian
|
||
| Chichester, England ; ; Hoboken, NJ, : John Wiley, c2006 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||