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Silicon nanocrystals [[electronic resource] ] : fundamentals, synthesis and applications / / edited by Lorenzo Pavesi and Rasit Turan
| Silicon nanocrystals [[electronic resource] ] : fundamentals, synthesis and applications / / edited by Lorenzo Pavesi and Rasit Turan |
| Pubbl/distr/stampa | Hoboken, NJ, : Wiley-Blackwell, 2010 |
| Descrizione fisica | 1 online resource (651 p.) |
| Disciplina |
661.0683
661.0683 22 |
| Altri autori (Persone) |
PavesiLorenzo
TuranRasit |
| Soggetto topico |
Nanosilicon
Silicon crystals |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-282-48274-2
9786612482748 3-527-62995-5 3-527-62996-3 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Silicon Nanocrystals: Fundamentals, Synthesis and Applications; Contents; List of Contributors; 1 Introduction; References; 2 Electronic and Optical Properties of Silicon Nanocrystals; 2.1 Introduction; 2.2 Ab Initio Calculation for Small Nanocrystals; 2.2.1 Hydrogenated Silicon Nanocrystals; 2.2.2 Oxidized Silicon Nanocrystals; 2.2.3 Doped Silicon Nanocrystals; 2.2.3.1 Single-Doped Silicon Nanocrystals; 2.2.3.2 Codoped Silicon Nanocrystals; 2.2.4 Silicon Nanocrystals Embedded in a SiO2 Matrix; 2.3 Pseudopotential Calculations for Large Nanocrystals; 2.3.1 Effective Optical Gap
2.3.2 Radiative Lifetime2.3.3 Linear Optical Absorption; 2.3.3.1 Interband Absorption; 2.3.3.2 Intraband Absorption; 2.3.3.3 Excited State Absorption; 2.3.4 Third-Order Nonlinear Optical Properties; 2.3.5 Quantum-Confined Stark Effect in Si Nanocrystals; References; 3 Optical Properties of Intrinsic and Shallow Impurity-Doped Silicon Nanocrystals; 3.1 Introduction; 3.2 PL Properties of Intrinsic Silicon Nanocrystals; 3.2.1 Fundamental Properties; 3.2.2 Effect of Size and Shape Distribution on the PL Bandwidth; 3.2.3 Resonant Quenching of PL Band Due to Energy Transfer 3.2.4 PL Quantum Efficiency of Intrinsic Si Nanocrystals3.3 Shallow Impurity-Doped Si Nanocrystals; 3.3.1 Preparation of Impurity-Doped Si Nanocrystals; 3.3.2 PL from B-Doped Si Nanocrystals; 3.3.3 PL from P-Doped Si Nanocrystals; 3.3.4 Electron Spin Resonance Studies of Shallow Impurity-Doped Si Nanocrystals; 3.3.5 Location of Dopant Atoms; 3.4 P and B Codoped Si Nanocrystals; 3.4.1 PL Properties of P and B Codoped Si Nanocrystals; 3.4.2 PL Lifetime of P and B Codoped Si Nanocrystals; 3.4.3 Codoped But Not Compensated Si Nanocrystals; 3.5 Summary; References 4 Electrical Transport Mechanisms in Ensembles of Silicon Nanocystallites4.1 Introduction; 4.2 Background; 4.2.1 Basic Concepts Associated with Transport and Quantum Dots; 4.2.2 Previous Studies of Transport in Systems of Si; 4.3 Experimental Details; 4.4 Experimental Results and Their Interpretation; 4.4.1 The Low-x Regime; 4.4.2 The Low-x to Intermediate-x Transition Regime; 4.4.3 The Intermediate-x Regime; 4.4.4 The Percolation Threshold Regime; 4.4.5 The High-x Regime; 4.5 Discussion and Overview; References; 5 Thermal Properties and Heat Transport in Silicon-Based Nanostructures 5.1 Introduction5.2 Thermal Conductivity in Bulk Solids and Nanostructures; 5.2.1 Kinetic Theory: Thermal Properties and Heat Flow; 5.2.2 Lattice Thermal Conductivity; 5.2.3 Electronic Thermal Conductivity; 5.3 Measurements of Thermal Conductivity in Nanostructures; 5.3.1 The 3ω Method; 5.3.2 In-Plane Thermal Conductivity Measurements; 5.3.3 Pump-Probe and Other Optical Measurements; 5.3.4 Raman Scattering and Thermal Conductivity; 5.4 Thermal Properties of Si-Based Nanostructures; 5.4.1 Two- and One-Dimensional Si Nanostructures: Si-on-Insulator and Si Nanowires 5.4.2 Epitaxially Grown Si/SiGe Nanostructures: Superlattices and Cluster Multilayers |
| Record Nr. | UNINA-9910139499203321 |
| Hoboken, NJ, : Wiley-Blackwell, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Silicon nanocrystals [[electronic resource] ] : fundamentals, synthesis and applications / / edited by Lorenzo Pavesi and Rasit Turan
| Silicon nanocrystals [[electronic resource] ] : fundamentals, synthesis and applications / / edited by Lorenzo Pavesi and Rasit Turan |
| Pubbl/distr/stampa | Hoboken, NJ, : Wiley-Blackwell, 2010 |
| Descrizione fisica | 1 online resource (651 p.) |
| Disciplina |
661.0683
661.0683 22 |
| Altri autori (Persone) |
PavesiLorenzo
TuranRasit |
| Soggetto topico |
Nanosilicon
Silicon crystals |
| ISBN |
1-282-48274-2
9786612482748 3-527-62995-5 3-527-62996-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Silicon Nanocrystals: Fundamentals, Synthesis and Applications; Contents; List of Contributors; 1 Introduction; References; 2 Electronic and Optical Properties of Silicon Nanocrystals; 2.1 Introduction; 2.2 Ab Initio Calculation for Small Nanocrystals; 2.2.1 Hydrogenated Silicon Nanocrystals; 2.2.2 Oxidized Silicon Nanocrystals; 2.2.3 Doped Silicon Nanocrystals; 2.2.3.1 Single-Doped Silicon Nanocrystals; 2.2.3.2 Codoped Silicon Nanocrystals; 2.2.4 Silicon Nanocrystals Embedded in a SiO2 Matrix; 2.3 Pseudopotential Calculations for Large Nanocrystals; 2.3.1 Effective Optical Gap
2.3.2 Radiative Lifetime2.3.3 Linear Optical Absorption; 2.3.3.1 Interband Absorption; 2.3.3.2 Intraband Absorption; 2.3.3.3 Excited State Absorption; 2.3.4 Third-Order Nonlinear Optical Properties; 2.3.5 Quantum-Confined Stark Effect in Si Nanocrystals; References; 3 Optical Properties of Intrinsic and Shallow Impurity-Doped Silicon Nanocrystals; 3.1 Introduction; 3.2 PL Properties of Intrinsic Silicon Nanocrystals; 3.2.1 Fundamental Properties; 3.2.2 Effect of Size and Shape Distribution on the PL Bandwidth; 3.2.3 Resonant Quenching of PL Band Due to Energy Transfer 3.2.4 PL Quantum Efficiency of Intrinsic Si Nanocrystals3.3 Shallow Impurity-Doped Si Nanocrystals; 3.3.1 Preparation of Impurity-Doped Si Nanocrystals; 3.3.2 PL from B-Doped Si Nanocrystals; 3.3.3 PL from P-Doped Si Nanocrystals; 3.3.4 Electron Spin Resonance Studies of Shallow Impurity-Doped Si Nanocrystals; 3.3.5 Location of Dopant Atoms; 3.4 P and B Codoped Si Nanocrystals; 3.4.1 PL Properties of P and B Codoped Si Nanocrystals; 3.4.2 PL Lifetime of P and B Codoped Si Nanocrystals; 3.4.3 Codoped But Not Compensated Si Nanocrystals; 3.5 Summary; References 4 Electrical Transport Mechanisms in Ensembles of Silicon Nanocystallites4.1 Introduction; 4.2 Background; 4.2.1 Basic Concepts Associated with Transport and Quantum Dots; 4.2.2 Previous Studies of Transport in Systems of Si; 4.3 Experimental Details; 4.4 Experimental Results and Their Interpretation; 4.4.1 The Low-x Regime; 4.4.2 The Low-x to Intermediate-x Transition Regime; 4.4.3 The Intermediate-x Regime; 4.4.4 The Percolation Threshold Regime; 4.4.5 The High-x Regime; 4.5 Discussion and Overview; References; 5 Thermal Properties and Heat Transport in Silicon-Based Nanostructures 5.1 Introduction5.2 Thermal Conductivity in Bulk Solids and Nanostructures; 5.2.1 Kinetic Theory: Thermal Properties and Heat Flow; 5.2.2 Lattice Thermal Conductivity; 5.2.3 Electronic Thermal Conductivity; 5.3 Measurements of Thermal Conductivity in Nanostructures; 5.3.1 The 3ω Method; 5.3.2 In-Plane Thermal Conductivity Measurements; 5.3.3 Pump-Probe and Other Optical Measurements; 5.3.4 Raman Scattering and Thermal Conductivity; 5.4 Thermal Properties of Si-Based Nanostructures; 5.4.1 Two- and One-Dimensional Si Nanostructures: Si-on-Insulator and Si Nanowires 5.4.2 Epitaxially Grown Si/SiGe Nanostructures: Superlattices and Cluster Multilayers |
| Record Nr. | UNINA-9910831077303321 |
| Hoboken, NJ, : Wiley-Blackwell, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Silicon nanocrystals : fundamentals, synthesis and applications / / edited by Lorenzo Pavesi and Rasit Turan
| Silicon nanocrystals : fundamentals, synthesis and applications / / edited by Lorenzo Pavesi and Rasit Turan |
| Pubbl/distr/stampa | Hoboken, NJ, : Wiley-Blackwell, 2010 |
| Descrizione fisica | 1 online resource (651 p.) |
| Disciplina |
661.0683
661.0683 22 |
| Altri autori (Persone) |
PavesiLorenzo
TuranRasit |
| Soggetto topico |
Silicon
Nanostructured materials |
| ISBN |
1-282-48274-2
9786612482748 3-527-62995-5 3-527-62996-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Silicon Nanocrystals: Fundamentals, Synthesis and Applications; Contents; List of Contributors; 1 Introduction; References; 2 Electronic and Optical Properties of Silicon Nanocrystals; 2.1 Introduction; 2.2 Ab Initio Calculation for Small Nanocrystals; 2.2.1 Hydrogenated Silicon Nanocrystals; 2.2.2 Oxidized Silicon Nanocrystals; 2.2.3 Doped Silicon Nanocrystals; 2.2.3.1 Single-Doped Silicon Nanocrystals; 2.2.3.2 Codoped Silicon Nanocrystals; 2.2.4 Silicon Nanocrystals Embedded in a SiO2 Matrix; 2.3 Pseudopotential Calculations for Large Nanocrystals; 2.3.1 Effective Optical Gap
2.3.2 Radiative Lifetime2.3.3 Linear Optical Absorption; 2.3.3.1 Interband Absorption; 2.3.3.2 Intraband Absorption; 2.3.3.3 Excited State Absorption; 2.3.4 Third-Order Nonlinear Optical Properties; 2.3.5 Quantum-Confined Stark Effect in Si Nanocrystals; References; 3 Optical Properties of Intrinsic and Shallow Impurity-Doped Silicon Nanocrystals; 3.1 Introduction; 3.2 PL Properties of Intrinsic Silicon Nanocrystals; 3.2.1 Fundamental Properties; 3.2.2 Effect of Size and Shape Distribution on the PL Bandwidth; 3.2.3 Resonant Quenching of PL Band Due to Energy Transfer 3.2.4 PL Quantum Efficiency of Intrinsic Si Nanocrystals3.3 Shallow Impurity-Doped Si Nanocrystals; 3.3.1 Preparation of Impurity-Doped Si Nanocrystals; 3.3.2 PL from B-Doped Si Nanocrystals; 3.3.3 PL from P-Doped Si Nanocrystals; 3.3.4 Electron Spin Resonance Studies of Shallow Impurity-Doped Si Nanocrystals; 3.3.5 Location of Dopant Atoms; 3.4 P and B Codoped Si Nanocrystals; 3.4.1 PL Properties of P and B Codoped Si Nanocrystals; 3.4.2 PL Lifetime of P and B Codoped Si Nanocrystals; 3.4.3 Codoped But Not Compensated Si Nanocrystals; 3.5 Summary; References 4 Electrical Transport Mechanisms in Ensembles of Silicon Nanocystallites4.1 Introduction; 4.2 Background; 4.2.1 Basic Concepts Associated with Transport and Quantum Dots; 4.2.2 Previous Studies of Transport in Systems of Si; 4.3 Experimental Details; 4.4 Experimental Results and Their Interpretation; 4.4.1 The Low-x Regime; 4.4.2 The Low-x to Intermediate-x Transition Regime; 4.4.3 The Intermediate-x Regime; 4.4.4 The Percolation Threshold Regime; 4.4.5 The High-x Regime; 4.5 Discussion and Overview; References; 5 Thermal Properties and Heat Transport in Silicon-Based Nanostructures 5.1 Introduction5.2 Thermal Conductivity in Bulk Solids and Nanostructures; 5.2.1 Kinetic Theory: Thermal Properties and Heat Flow; 5.2.2 Lattice Thermal Conductivity; 5.2.3 Electronic Thermal Conductivity; 5.3 Measurements of Thermal Conductivity in Nanostructures; 5.3.1 The 3ω Method; 5.3.2 In-Plane Thermal Conductivity Measurements; 5.3.3 Pump-Probe and Other Optical Measurements; 5.3.4 Raman Scattering and Thermal Conductivity; 5.4 Thermal Properties of Si-Based Nanostructures; 5.4.1 Two- and One-Dimensional Si Nanostructures: Si-on-Insulator and Si Nanowires 5.4.2 Epitaxially Grown Si/SiGe Nanostructures: Superlattices and Cluster Multilayers |
| Record Nr. | UNINA-9910877717903321 |
| Hoboken, NJ, : Wiley-Blackwell, 2010 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||