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Emerging materials : design, characterization and applications / / Laxman Raju Thoutam, Shubham Tayal and J. Ajayan, editors
Emerging materials : design, characterization and applications / / Laxman Raju Thoutam, Shubham Tayal and J. Ajayan, editors
Pubbl/distr/stampa Singapore : , : Springer Nature Singapore Pte Ltd., , [2022]
Descrizione fisica 1 online resource (472 pages)
Disciplina 620.11
Soggetto topico Nanostructured materials
Nanotechnology
Metamaterials
ISBN 981-19-1312-9
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910568300403321
Singapore : , : Springer Nature Singapore Pte Ltd., , [2022]
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Emerging materials : design, characterization and applications / / Laxman Raju Thoutam, Shubham Tayal and J. Ajayan, editors
Emerging materials : design, characterization and applications / / Laxman Raju Thoutam, Shubham Tayal and J. Ajayan, editors
Pubbl/distr/stampa Singapore : , : Springer Nature Singapore Pte Ltd., , [2022]
Descrizione fisica 1 online resource (472 pages)
Disciplina 620.11
Soggetto topico Nanostructured materials
Nanotechnology
Metamaterials
ISBN 981-19-1312-9
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNISA-996475871603316
Singapore : , : Springer Nature Singapore Pte Ltd., , [2022]
Materiale a stampa
Lo trovi qui: Univ. di Salerno
Opac: Controlla la disponibilità qui
Handbook of Emerging Materials for Semiconductor Industry
Handbook of Emerging Materials for Semiconductor Industry
Autore Song Young Suh
Edizione [1st ed.]
Pubbl/distr/stampa Singapore : , : Springer, , 2024
Descrizione fisica 1 online resource (930 pages)
Altri autori (Persone) ThoutamLaxman Raju
TayalShubam
RahiShiromani Balmukund
SamuelT. S. Arun
ISBN 981-9966-49-3
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Intro -- Preface -- Contents -- About the Editors -- Contributors -- Section I: Foundation of Emerging Materials -- 1 Fundamental of Emerging Nanomaterials -- Introduction -- Discovery of Emerging Nanomaterials -- C-Based Nanomaterials: Graphite, Graphene, and CNT -- Biomedical Applications of Carbon Nanotubes (CNTs) -- Metamaterials -- Perovskite Materials -- Insulators and High-K Materials -- Silicon and Group IV Molecules -- Thermal Function of Nanomaterial -- Mechanical Function of Nanomaterials -- Electrical/Electronic Function of Nanomaterials -- Optical Function of Nanomaterials -- Photovoltaic Functions of Nanomaterials -- Conclusions -- References -- 2 An Industrial Perspective on Nanomaterials in the Semiconductor Industry -- Introduction -- Fabrication Using Nanomaterials -- Top-Down Approach -- Bottom-Up Approach -- HOPG Mechanical Cleavage -- Solution Processing -- SiC-Based Substrates with Epitaxial Growth -- Chemical Vapor Deposition (CVD) -- Semiconductor Quantum Dot -- Semiconductor Nanowire -- Novel Semiconductor Nanowire Structure -- High-Quality Heterojunction Nanowires -- Solar Energy-Based Technologies -- Thin Film Application -- Photovoltaic Application -- PV Based on Bulk Semiconductors -- Conclusion -- References -- 3 Fundamental of Carbon-Based Nanomaterials: Graphite, Graphene, and Carbon Nanotube (CNT) -- Graphite -- Structure -- Properties -- Applications -- Graphene -- Structure -- Properties -- Applications -- Carbon Nanotubes (CNTs) -- Structure -- Properties -- Applications -- References -- 4 Principle and Application of C-based Nanomaterials: Graphite, Graphene, and Carbon Nanotube (CNT) -- Introduction -- Graphite -- Graphene -- Graphene FETs -- Carbon Nanotubes -- Types of Carbon Nanotubes -- Single-Walled Carbon Nanotubes (SWCNTs) -- Multiwalled Carbon Nanotubes (MWCNTs) -- Features of Carbon Nanotube.
Synthesis and Production of Carbon Nanotubes -- Applications of Carbon Nanotubes -- Conclusion -- References -- 5 Electronic Transport Properties of XO (X = Fe, Cu, Eu, Mg) Monowire-Based Molecular Device: A First-Principles Investigation -- Introduction -- Materials and Methods -- Results and Discussion -- Device Density of States (DDOS) -- Transmission Spectrum -- Conclusion -- References -- 6 An Application and Mechanical Function of Nanomaterials in Science and Engineering -- Introduction -- Important Aspects of Nanomaterials -- Factors Affecting the Mechanical Performance of Nanomaterials -- Synthesis of Nanoparticles -- Properties of Nanomaterials -- Physical Characteristics -- Chemical Characteristics -- Mechanical Characteristics -- Intensity and Abrasiveness -- Freestanding Flexibility and Strain Stiffening -- Nature in Superplastic and Crawlers Creep -- Fracture and Toughness -- Corrosion Characteristics -- Electrical Characteristics -- Optical Characteristics -- Magnetic Characteristics -- Thermal Characteristics -- Application Relevant to the Mechanical Properties of Nanoparticle -- Nanoparticles Used as Solvents -- Lubricant Mechanism -- Effect of Tribo-Test Type, Concentration, and Nanoparticle Shape, Size, and Surface -- Coating with Nanoparticle -- Nanoparticles in Nanofabrication -- Selected Applications of Nanotechnology Including Nanoparticles -- Heavy Industries -- An Inevitable Use of Nanotechnology Will Be in Heavy Industries -- Application of Nanomaterials-Based Products in Different Areas -- Future Potential -- Conclusion -- References -- 7 Different Perovskite Materials, Properties, and Applications -- Introduction -- Classifications of Perovskite Materials -- Inorganic Perovskites -- Organic Perovskites -- Hybrid Perovskites -- Double Perovskites -- Ruddlesden-Popper Perovskites -- Brownmillerite Perovskites.
Relaxer Perovskites -- Basic Properties of Perovskite Materials -- Applications of Perovskite Materials -- Conclusion -- References -- 8 Magnetic Logic and Magnetic Computing Spin-Based Devices -- Introduction -- Magnetic Logic Devices -- Magnetic Tunnel Junction (MTJ) Devices -- Domain-Wall Racetrack Memory Devices -- Magnetic Spin Wave Logic Devices -- Magnetic Quantum Dot Cellular Automata (MQCA) -- Magnetic Computing -- Magnetic Random Access Memory (MRAM) -- Magnetic Logic Devices -- Magnetic Field Sensors -- Magnetic Quantum Computing -- References -- Section II: Fabrication and Design -- 9 Introduction to Latest Fabrication Techniques -- Introduction -- Raw Materials Needed to Manufacture Semiconductor Chips -- Overall Semiconductor Production Process Flow -- Wafer Manufacturing and Cleaning (Start) -- Oxidation -- Photolithography -- Etching -- Ion Implantation -- Metal Deposition -- Testing -- Packaging -- Conclusion -- References -- 10 Multiwafer Process: Wafer Selection and Wafer Cleaning -- Introduction -- Types of Wafer -- Introduction to Cleaning Equipment -- Cleaning Process -- Wafer Cleaning Before Oxidation (Initial Stage) -- Cleaning Wafer Before Making Gate (Before Metallization) -- Cleaning Before Making Metal-Contact Line Among Transistors (Final Stage) -- Conclusion -- References -- 11 Oxidation -- Introduction -- Oxidation Furnace -- Visualization of Oxidation Process -- Mathematical Interpretation of Oxidation Process -- Conclusion -- References -- 12 Thin Film Analysis After Oxidation -- Introduction -- Relationship Between Oxide Layer´s Characteristics and Producing Method -- Effect of Silicon Orientation on Oxidation Process -- Comparison Between Ideal SiO2 and Real SiO2 -- Conclusion -- References -- 13 Metal Deposition -- Introduction -- How to Select Good Metal Material -- How to Utilize Each Metal Materials.
Optimizing Metal Process -- Conclusion -- References -- 14 Different Types of Thin Film Deposition Techniques and Application -- Introduction -- Spray Pyrolysis Technique -- Spin Coating Method -- Sputtering -- Cathodic Arc Deposition -- Molecular Beam Epitaxy (MBE) -- Electron Beam Evaporation -- Chemical Vapor Deposition (CVD) -- Pulsed Laser Deposition (PLD) -- Thermal Evaporation -- References -- 15 Ion Implanted Modification of Nanomaterials for Semiconductor Devices and Other Applications -- Introduction -- Ion Stopping Mechanism -- Range and Straggle of Ion Implant -- Ion Implanter -- Annealing -- Furnace Annealing -- Rapid Thermal Annealing -- Shallow Junction Formation -- High-Energy Implantation -- References -- 16 Synthesis, Properties, and Applications of Graphene and 2D Semiconductors -- Introduction -- Different Methods of Synthesis of Graphene and Two-Dimensional (2D) Materials -- Fundamental Properties of Graphene and Two-Dimensional (2D) Materials -- Application of Graphene and Two-Dimensional (2D) Materials -- Challenges and Opportunities in 2D Semiconductors -- Conclusion -- References -- 17 Design of Biosensor with High Sensing Margin -- Introduction -- History of Biosensors -- Characteristics of a Biosensor -- Classification of a Biosensor -- Based on the Biological Sensing Element -- Based on the Mode of Transduction -- Based on the Application Domain -- Classification of a Biosensor -- Conclusion -- References -- 18 Design and Modeling of Gate Engineered Tunnel Field-Effect Transistor -- Introduction -- Concepts Fundamental to Tunneling -- Tunnel FET Scaling -- Tunnel FET Future Perspectives -- Problems with Gate Oxide Scaling -- Gate Metal and Channel Engineering -- Multi-Gate Tunnel FET -- Gate Work Function Engineered Tunnel FET -- Subthreshold Analytical Model.
Modeling of Gate Engineered Dual Halo Gate Stacked Triple Material Surrounding Gate Tunnel FET -- Surface Potential -- Lower Surface Potential Limit -- Threshold Voltage -- Summary -- References -- 19 Advanced Lithographic Techniques for Sub-nm Lithographic Resolution of Feature Length -- Introduction -- Quantum Interferometric Optical Lithography -- Thermal Scanning Tunneling Microscopy (t-SPL) -- Nanoimprint Lithography -- Scanning Tunneling Microscopy (STM) -- Self-Assembly Based Techniques -- Extreme Ultraviolet Lithography (EUVL) -- Concluding Remarks -- References -- 20 High-NA EUV: Prospects and Challenges and Stochastic Defects Related Manufacturing Yield Loss -- Introduction -- The Key Characteristics of High-NA EUV Lithography -- Key Challenges of High-NA EUV Lithography -- Light Sources That Can Support Photon Shot Noise and Productivity Requirements -- Solutions for Meeting Small Depth of Focus at 0.55 NA -- Polarization Control for Maintaining High Contrast at 0.55 NA -- Computational Lithography Capabilities -- Secondary Electrons Kinetics, Their Distributions, Their Impact on Resist Blur, and Possible Way of Containing Secondary Elect... -- Concluding Remarks -- References -- 21 Contact Engineering for Contact Resistance Minimization of Conventional, III-V, and 2D FETs -- Introduction -- Proper Understanding of Physics and Chemistry of SBH, Fermi Level Pinning Effect -- Different Contact Resistance Minimization Techniques Applicable to All FET Architectures -- Typical and Advanced Contact Minimization Techniques Applied to Conventional, III-V, and 2D FETs -- Concluding Remarks -- References -- Section III: Measurement and Utilization -- 22 Quantum Effects in Multi-gate MOSFETs -- Introduction -- Methodology -- Device Structure -- Quantum Model -- Inversion Charge Model -- Drain Current Model -- Transconductance Model.
Capacitance-Voltage Model.
Record Nr. UNINA-9910865245803321
Song Young Suh  
Singapore : , : Springer, , 2024
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui