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An introduction to the physics and electrochemistry of semiconductors : fundamentals and applications / / Maheshwar Sharon
| An introduction to the physics and electrochemistry of semiconductors : fundamentals and applications / / Maheshwar Sharon |
| Autore | Sharon Maheshwar |
| Pubbl/distr/stampa | Hoboken, New Jersey : , : John Wiley & Sons |
| Descrizione fisica | 1 online resource (342 p.) |
| Disciplina | 537.6/22 |
| Soggetto topico |
Semiconductors - Electric properties
Semiconductors - Materials |
| ISBN |
1-119-27435-4
1-119-27434-6 1-119-27436-2 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Cover; Title Page; Copyright Page; Dedication; Contents; Foreword; Preface; 1 Our Universe and the Sun; 1.1 Formation of the Universe; 1.2 Formation of Stars; 1.2.1 Formation of Energy in the Sun; 1.2.2 Description of the Sun; 1.2.3 Transfer of Solar Rays through the Ozone Layer; 1.2.4 Transfer of Solar Layers through Other Layers; 1.2.5 Effect of Position of the Sun vis-à-vis the Earth; 1.2.6 Distribution of Solar Energy; 1.2.7 Solar Intensity Calculation; 1.3 Summary; Reference; 2 Solar Energy and Its Applications; 2.1 Introduction to a Semiconductor; 2.2 Formation of a Compound
2.2.1 A Classical Approach2.2.2 Why Call It a Band and Not a Level?; 2.2.3 Quantum Chemistry Approach; 2.2.3.1 Wave Nature of an Electron in a Fixed Potential; 2.2.3.2 Wave Nature of an Electron under a Periodically Changing Potential; 2.2.3.3 Concept of a Forbidden Gap in a Material; 2.2.4 Band Model to Explain Conductivity in Solids; 2.2.4.1 Which of the Total Electrons Will Accept the External Energy for Their Excitation?; 2.2.4.2 Density of States; 2.2.4.3 How Do We Find the Numbers of Electrons in These Bands?; 2.2.5 Useful Deductions; 2.2.5.1 Extrinsic Semiconductor 2.2.5.2 Role of Dopants in the Semiconductor2.3 Quantum Theory Approach to Explain the Effect of Doping; 2.3.1 A Mathematical Approach to Understanding This Problem; 2.3.2 Representation of Various Energy Levels in a Semiconductor; 2.4 Types of Carriers in a Semiconductor; 2.4.1 Majority and Minority Carriers; 2.4.2 Direction of Movement of Carriers in a Semiconductor; 2.5 Nature of Band Gaps in Semiconductors; 2.6 Can the Band Gap of a Semiconductor Be Changed?; 2.7 Summary; Further Reading; 3 Theory of Junction Formation; 3.1 Flow of Carriers across the Junction 3.1.1 Why Do Carriers Flow across an Interface When n- and p-Type Semiconductors Are Joined Together with No Air Gap?3.1.2 Does the Vacuum Level Remain Unaltered, and What Is the Significance of Showing a Bend in the Diagram?; 3.1.3 Why Do We Draw a Horizontal or Exponential Line to Represent the Energy Level in the Semiconductor with a Long Line?; 3.1.4 What Are the Impacts of Migration of Carriers toward the Interface?; 3.2 Representing Energy Levels Graphically; 3.3 Depth of Charge Separation at the Interface of n- and p-Type Semiconductors; 3.4 Nature of Potential at the Interface 3.4.1 Does Any Current Flow through the Interface?3.4.2 Effect of Application of External Potential to the p:n Junction Formed by the Two Semiconductors; 3.4.2.1 Flow of Carriers from n-Type to p-Type; 3.4.2.2 Flow of Carriers from p-Type to n-Type; 3.4.2.3 Flow of Current due to Holes; 3.4.2.4 Flow of Current due to Electrons; 3.4.3 What Would Happen If Negative Potential Were Applied to a p-Type Semiconductor?; 3.4.3.1 Flow of Majority Carriers from p- to n-Type Semiconductors; 3.4.3.2 Flow of Majority Carriers from n- to p-Type 3.4.3.3 Flow of Minority Carrier from p- to n-Type Semiconductors |
| Record Nr. | UNINA-9910135020203321 |
Sharon Maheshwar
|
||
| Hoboken, New Jersey : , : John Wiley & Sons | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
An introduction to the physics and electrochemistry of semiconductors : fundamentals and applications / / Maheshwar Sharon
| An introduction to the physics and electrochemistry of semiconductors : fundamentals and applications / / Maheshwar Sharon |
| Autore | Sharon Maheshwar |
| Pubbl/distr/stampa | Hoboken, New Jersey : , : John Wiley & Sons |
| Descrizione fisica | 1 online resource (342 p.) |
| Disciplina | 537.6/22 |
| Soggetto topico |
Semiconductors - Electric properties
Semiconductors - Materials |
| ISBN |
1-119-27435-4
1-119-27434-6 1-119-27436-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Cover; Title Page; Copyright Page; Dedication; Contents; Foreword; Preface; 1 Our Universe and the Sun; 1.1 Formation of the Universe; 1.2 Formation of Stars; 1.2.1 Formation of Energy in the Sun; 1.2.2 Description of the Sun; 1.2.3 Transfer of Solar Rays through the Ozone Layer; 1.2.4 Transfer of Solar Layers through Other Layers; 1.2.5 Effect of Position of the Sun vis-à-vis the Earth; 1.2.6 Distribution of Solar Energy; 1.2.7 Solar Intensity Calculation; 1.3 Summary; Reference; 2 Solar Energy and Its Applications; 2.1 Introduction to a Semiconductor; 2.2 Formation of a Compound
2.2.1 A Classical Approach2.2.2 Why Call It a Band and Not a Level?; 2.2.3 Quantum Chemistry Approach; 2.2.3.1 Wave Nature of an Electron in a Fixed Potential; 2.2.3.2 Wave Nature of an Electron under a Periodically Changing Potential; 2.2.3.3 Concept of a Forbidden Gap in a Material; 2.2.4 Band Model to Explain Conductivity in Solids; 2.2.4.1 Which of the Total Electrons Will Accept the External Energy for Their Excitation?; 2.2.4.2 Density of States; 2.2.4.3 How Do We Find the Numbers of Electrons in These Bands?; 2.2.5 Useful Deductions; 2.2.5.1 Extrinsic Semiconductor 2.2.5.2 Role of Dopants in the Semiconductor2.3 Quantum Theory Approach to Explain the Effect of Doping; 2.3.1 A Mathematical Approach to Understanding This Problem; 2.3.2 Representation of Various Energy Levels in a Semiconductor; 2.4 Types of Carriers in a Semiconductor; 2.4.1 Majority and Minority Carriers; 2.4.2 Direction of Movement of Carriers in a Semiconductor; 2.5 Nature of Band Gaps in Semiconductors; 2.6 Can the Band Gap of a Semiconductor Be Changed?; 2.7 Summary; Further Reading; 3 Theory of Junction Formation; 3.1 Flow of Carriers across the Junction 3.1.1 Why Do Carriers Flow across an Interface When n- and p-Type Semiconductors Are Joined Together with No Air Gap?3.1.2 Does the Vacuum Level Remain Unaltered, and What Is the Significance of Showing a Bend in the Diagram?; 3.1.3 Why Do We Draw a Horizontal or Exponential Line to Represent the Energy Level in the Semiconductor with a Long Line?; 3.1.4 What Are the Impacts of Migration of Carriers toward the Interface?; 3.2 Representing Energy Levels Graphically; 3.3 Depth of Charge Separation at the Interface of n- and p-Type Semiconductors; 3.4 Nature of Potential at the Interface 3.4.1 Does Any Current Flow through the Interface?3.4.2 Effect of Application of External Potential to the p:n Junction Formed by the Two Semiconductors; 3.4.2.1 Flow of Carriers from n-Type to p-Type; 3.4.2.2 Flow of Carriers from p-Type to n-Type; 3.4.2.3 Flow of Current due to Holes; 3.4.2.4 Flow of Current due to Electrons; 3.4.3 What Would Happen If Negative Potential Were Applied to a p-Type Semiconductor?; 3.4.3.1 Flow of Majority Carriers from p- to n-Type Semiconductors; 3.4.3.2 Flow of Majority Carriers from n- to p-Type 3.4.3.3 Flow of Minority Carrier from p- to n-Type Semiconductors |
| Record Nr. | UNINA-9910812217703321 |
|
Sharon Maheshwar
|
||
| Hoboken, New Jersey : , : John Wiley & Sons | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Nuclear chemistry / / Maheshwar Sharon, Madhuri Sharon
| Nuclear chemistry / / Maheshwar Sharon, Madhuri Sharon |
| Autore | Sharon Maheshwar |
| Edizione | [Second edition.] |
| Pubbl/distr/stampa | Cham, Switzerland : , : Springer, , [2021] |
| Descrizione fisica | 1 online resource (xix, 235 pages : 77 illustrations, 1 illustration in color) |
| Disciplina | 541.38 |
| Soggetto topico |
Nuclear chemistry
Chemistry, Inorganic Chemistry, Organic |
| ISBN | 3-030-62018-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | 1. Nuclear Chemistry -- 2. Radioactivity -- 3. Nuclear Reaction -- 4. Interaction of Radiation with Matter -- 5. Ionization Counters -- 6. Scintillation Counter -- 7. Non-conventional Detection Techniques -- 8. Sample Preparation for Counting -- 9. Factors Affecting the Counting Efficiency -- 10. Identification of Radioactive Isotopes -- 11. Statistics of Counting -- 12. Health Hazards and Protection -- 13. Radiochemical Separation Techniques -- 14. Hot Atom-Nuclear Reaction. . |
| Record Nr. | UNINA-9910484476503321 |
|
Sharon Maheshwar
|
||
| Cham, Switzerland : , : Springer, , [2021] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||