III-Nitride Based Light Emitting Diodes and Applications / / edited by Tae-Yeon Seong, Jung Han, Hiroshi Amano, Hadis Morkoç |
Edizione | [2nd ed. 2017.] |
Pubbl/distr/stampa | Singapore : , : Springer Singapore : , : Imprint : Springer, , 2017 |
Descrizione fisica | 1 online resource (IX, 495 p. 367 illus., 280 illus. in color.) |
Disciplina | 621.381522 |
Collana | Topics in Applied Physics |
Soggetto topico |
Physics
Microwaves Optical engineering Semiconductors Applied and Technical Physics Microwaves, RF and Optical Engineering |
ISBN | 981-10-3755-8 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto | Progress and Prospect of Growth of Wide-Band-Gap Group III Nitrides -- Ultra-Efficient Solid-State Lighting -- LEDs Based on Heteroepitaxial GaN on Si Substrates -- Epitaxial Growth of GaN on Patterned Sapphire Substrates -- Growth and optical properties of GaN-based non- and semipolar LEDs -- Internal Quantum Efficiency in Light Emitting Diodes -- Internal Quantum Efficiency; Jong-In Shim -- III-Nitride Tunnel Junctions and their Applications -- Green, Yellow and Red LEDs -- AlGaN based deep-ultraviolet light-emitting diodes -- Ray Tracing for Light Extraction Efficiency (LEE) Modeling in Nitride LEDs -- Light Extraction of High Efficient Light-Emitting Diodes -- Electrical properties, reliability issues, and ESD robustness of InGaN-based LEDs -- Phosphors and white LED packaging -- High voltage LEDs -- Emerging System Level Applications for LED Technology. . |
Record Nr. | UNINA-9910254572703321 |
Singapore : , : Springer Singapore : , : Imprint : Springer, , 2017 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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III-nitride based light emitting diodes and applications / / Tae-Yeon Seong ... [et al.], editors |
Edizione | [1st ed. 2013.] |
Pubbl/distr/stampa | Dordrecht ; ; New York, : Springer, c2013 |
Descrizione fisica | 1 online resource (396 p.) |
Disciplina | 621.381522 |
Altri autori (Persone) | SeongTae-Yeon |
Collana | Topics in applied physics |
Soggetto topico |
Light emitting diodes
Diodes, Semiconductor |
ISBN | 94-007-5863-4 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Nota di contenuto | 1: Introduction Part A. Progress and prospect of growth of wide-band-gap III-nitrides; Hiroshi Amano -- 2: Introduction Part B. Ultra-efficient solid-state lighting: likely characteristics, economic benefits, technological approaches; Jeff Y. Tsao, et al -- 3: Epitaxy Part A. LEDs Based on Heteroepitaxial GaN on Si Substrates; Takashi Egawa and Osamu Oda -- 4: Epitaxy Part B. Epitaxial Growth of GaN on Patterned Sapphire Substrates; Kazuyuki Tadatomo -- 5: Growth and optical properties of GaN-based non- and semipolar LEDs; Michael Kneissl et al -- 6: Active region Part A. Internal Quantum Efficiency in Light Emitting Diodes; Elison Matioli and Claude Weisbuch -- 7: Active region Part B. Internal Quantum Efficiency; Jong-In Shim -- 8: Electrical properties, reliability issues, and ESD robustness of InGaN-based LEDs; Matteo Meneghini, et al -- 9: Light extraction efficiency Part A. Ray Tracing for Light Extraction Efficiency (LEE) Modeling in Nitride LEDs; C. Lalau Keraly, et al -- 10: Light extraction efficiency Part B. Light Extraction of High Efficient Light-Emitting Diodes; Ja-Yeon Kim, et al -- 11: Packaging. Phosphors and white LED packaging; Rong-Jun Xie and Naoto Hirosaki -- 12: High voltage LED; Wen-Yung Yeh, et al -- 13: Color Quality of White LEDs; Yoshi Ohno -- 14: Emerging System Level Applications for LED Technology; Robert F. Karlicek, Jr. |
Record Nr. | UNINA-9910257390903321 |
Dordrecht ; ; New York, : Springer, c2013 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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