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Chalcogenide photovoltaics [[electronic resource] ] : physics, technologies, and thin film devices / / Roland Scheer and Hans-Werner Schock
Chalcogenide photovoltaics [[electronic resource] ] : physics, technologies, and thin film devices / / Roland Scheer and Hans-Werner Schock
Autore Scheer Roland
Pubbl/distr/stampa Weinheim, Germany, : Wiley-VCH Verlag GmbH & Co., 2011
Descrizione fisica 1 online resource (386 p.)
Disciplina 621.31244
Altri autori (Persone) SchockH. W (Hans-Werner)
Soggetto topico Photovoltaic cells - Materials
Chalcogenides
Compound semiconductors
Soggetto genere / forma Electronic books.
ISBN 1-283-30246-2
9786613302465
3-527-63371-5
3-527-63370-7
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Chalcogenide Photovoltaics; Contents; Preface; Symbols and Acronyms; 1 Introduction; 1.1 History of Cu(In,Ga)(S,Se)2 Solar Cells; 1.1.1 Milestones of Cu(In,Ga)(S,Se)2 Development; 1.2 History of CdTe Solar Cells; 1.2.1 Milestones of CdTe Development; 1.3 Prospects of Chalcogenide Photovoltaics; 2 Thin Film Heterostructures; 2.1 Energies and Potentials; 2.2 Charge Densities and Fluxes; 2.3 Energy Band Diagrams; 2.3.1 Rules and Conventions; 2.3.2 Absorber/Window; 2.3.3 Absorber/Buffer/Window; 2.3.4 Interface States; 2.3.5 Interface Dipoles; 2.3.6 Deep Bulk States; 2.3.7 Bandgap Gradients
2.4 Diode Currents2.4.1 Superposition Principle and Shifting Approximation; 2.4.2 Regions of Recombination; 2.4.3 Radiative Recombination; 2.4.4 Auger Recombination; 2.4.5 Defect Related Recombination; 2.4.5.1 SCR Recombination; 2.4.5.2 QNR Recombination; 2.4.5.3 Back Surface Recombination; 2.4.5.4 Interface Recombination; 2.4.6 Parallel Processes; 2.4.6.1 SCR and QNR Recombination; 2.4.6.2 SCR and IF Recombination; 2.4.7 Barriers for Diode Current; 2.4.8 Bias Dependence; 2.4.9 Non-Homogeneities; 2.5 Light Generated Currents; 2.5.1 Generation Currents; 2.5.2 Generation Function
2.5.3 Photo Current2.5.4 Collection Function; 2.5.4.1 Absorber Quasi Neutral Region; 2.5.4.2 QNR with Graded Bandgap; 2.5.4.3 QNR with Back Surface Field; 2.5.4.4 Absorber Space Charge Region; 2.5.4.5 Buffer Layer; 2.5.4.6 Simulating the Collection Function; 2.5.5 Quantum Efficiency and Charge Collection Efficiency; 2.5.6 Barriers for Photo Current; 2.5.7 Voltage Dependence of Photo Current; 2.5.7.1 Width of SCR; 2.5.7.2 Interface Recombination; 2.5.7.3 Photo Current Barriers; 2.6 Device Analysis and Parameters; 2.6.1 Equivalent Circuits; 2.6.1.1 DC Equivalent Circuit
2.6.1.2 AC Equivalent Circuit2.6.1.3 Module Equivalent Circuit; 2.6.2 Current-Voltage Analysis; 2.6.2.1 External Collection Efficiency; 2.6.2.2 Diode Parameters; 2.6.2.3 Open Circuit Voltage; 2.6.2.4 Fill Factor; 2.6.3 Capacitance-Voltage Analysis; 2.6.4 Admittance Spectroscopy; 3 Design Rules for Heterostructure Solar Cells and Modules; 3.1 Absorber Bandgap; 3.2 Band Alignment; 3.3 Emitter Doping and Doping Ratio; 3.4 Fermi Level Pinning; 3.5 Absorber Doping; 3.6 Absorber Thickness; 3.7 Grain Boundaries; 3.8 Back Contact Barrier; 3.9 Buffer Thickness; 3.10 Front Surface Gradient
3.11 Back Surface Gradients3.12 Monolithic Series Interconnection; 4 Thin Film Material Properties; 4.1 AII-BVI Absorbers; 4.1.1 Physico-Chemical Properties; 4.1.2 Lattice Dynamics; 4.1.3 Electronic Properties; 4.1.3.1 Practical Doping Limits; 4.1.3.2 Defect Spectroscopy; 4.1.3.3 Minority Carrier Lifetime; 4.1.4 Optical Properties; 4.1.4.1 CdTe; 4.1.4.2 Multinary Phases; 4.1.5 Surface Properties; 4.1.6 Properties of Grain Boundaries; 4.2 AI-BIII-CVI 2 Absorbers; 4.2.1 Physico-Chemical Properties; 4.2.1.1 Ternary Phase Diagrams; 4.2.1.2 Multinary Phases; 4.2.1.3 Diffusion Coefficients
4.2.2 Lattice Dynamics
Record Nr. UNINA-9910130882403321
Scheer Roland  
Weinheim, Germany, : Wiley-VCH Verlag GmbH & Co., 2011
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Chalcogenide photovoltaics [[electronic resource] ] : physics, technologies, and thin film devices / / Roland Scheer and Hans-Werner Schock
Chalcogenide photovoltaics [[electronic resource] ] : physics, technologies, and thin film devices / / Roland Scheer and Hans-Werner Schock
Autore Scheer Roland
Pubbl/distr/stampa Weinheim, Germany, : Wiley-VCH Verlag GmbH & Co., 2011
Descrizione fisica 1 online resource (386 p.)
Disciplina 621.31244
Altri autori (Persone) SchockH. W (Hans-Werner)
Soggetto topico Photovoltaic cells - Materials
Chalcogenides
Compound semiconductors
ISBN 1-283-30246-2
9786613302465
3-527-63371-5
3-527-63370-7
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Chalcogenide Photovoltaics; Contents; Preface; Symbols and Acronyms; 1 Introduction; 1.1 History of Cu(In,Ga)(S,Se)2 Solar Cells; 1.1.1 Milestones of Cu(In,Ga)(S,Se)2 Development; 1.2 History of CdTe Solar Cells; 1.2.1 Milestones of CdTe Development; 1.3 Prospects of Chalcogenide Photovoltaics; 2 Thin Film Heterostructures; 2.1 Energies and Potentials; 2.2 Charge Densities and Fluxes; 2.3 Energy Band Diagrams; 2.3.1 Rules and Conventions; 2.3.2 Absorber/Window; 2.3.3 Absorber/Buffer/Window; 2.3.4 Interface States; 2.3.5 Interface Dipoles; 2.3.6 Deep Bulk States; 2.3.7 Bandgap Gradients
2.4 Diode Currents2.4.1 Superposition Principle and Shifting Approximation; 2.4.2 Regions of Recombination; 2.4.3 Radiative Recombination; 2.4.4 Auger Recombination; 2.4.5 Defect Related Recombination; 2.4.5.1 SCR Recombination; 2.4.5.2 QNR Recombination; 2.4.5.3 Back Surface Recombination; 2.4.5.4 Interface Recombination; 2.4.6 Parallel Processes; 2.4.6.1 SCR and QNR Recombination; 2.4.6.2 SCR and IF Recombination; 2.4.7 Barriers for Diode Current; 2.4.8 Bias Dependence; 2.4.9 Non-Homogeneities; 2.5 Light Generated Currents; 2.5.1 Generation Currents; 2.5.2 Generation Function
2.5.3 Photo Current2.5.4 Collection Function; 2.5.4.1 Absorber Quasi Neutral Region; 2.5.4.2 QNR with Graded Bandgap; 2.5.4.3 QNR with Back Surface Field; 2.5.4.4 Absorber Space Charge Region; 2.5.4.5 Buffer Layer; 2.5.4.6 Simulating the Collection Function; 2.5.5 Quantum Efficiency and Charge Collection Efficiency; 2.5.6 Barriers for Photo Current; 2.5.7 Voltage Dependence of Photo Current; 2.5.7.1 Width of SCR; 2.5.7.2 Interface Recombination; 2.5.7.3 Photo Current Barriers; 2.6 Device Analysis and Parameters; 2.6.1 Equivalent Circuits; 2.6.1.1 DC Equivalent Circuit
2.6.1.2 AC Equivalent Circuit2.6.1.3 Module Equivalent Circuit; 2.6.2 Current-Voltage Analysis; 2.6.2.1 External Collection Efficiency; 2.6.2.2 Diode Parameters; 2.6.2.3 Open Circuit Voltage; 2.6.2.4 Fill Factor; 2.6.3 Capacitance-Voltage Analysis; 2.6.4 Admittance Spectroscopy; 3 Design Rules for Heterostructure Solar Cells and Modules; 3.1 Absorber Bandgap; 3.2 Band Alignment; 3.3 Emitter Doping and Doping Ratio; 3.4 Fermi Level Pinning; 3.5 Absorber Doping; 3.6 Absorber Thickness; 3.7 Grain Boundaries; 3.8 Back Contact Barrier; 3.9 Buffer Thickness; 3.10 Front Surface Gradient
3.11 Back Surface Gradients3.12 Monolithic Series Interconnection; 4 Thin Film Material Properties; 4.1 AII-BVI Absorbers; 4.1.1 Physico-Chemical Properties; 4.1.2 Lattice Dynamics; 4.1.3 Electronic Properties; 4.1.3.1 Practical Doping Limits; 4.1.3.2 Defect Spectroscopy; 4.1.3.3 Minority Carrier Lifetime; 4.1.4 Optical Properties; 4.1.4.1 CdTe; 4.1.4.2 Multinary Phases; 4.1.5 Surface Properties; 4.1.6 Properties of Grain Boundaries; 4.2 AI-BIII-CVI 2 Absorbers; 4.2.1 Physico-Chemical Properties; 4.2.1.1 Ternary Phase Diagrams; 4.2.1.2 Multinary Phases; 4.2.1.3 Diffusion Coefficients
4.2.2 Lattice Dynamics
Record Nr. UNINA-9910829904203321
Scheer Roland  
Weinheim, Germany, : Wiley-VCH Verlag GmbH & Co., 2011
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Chalcogenide photovoltaics : physics, technologies, and thin film devices / / Roland Scheer and Hans-Werner Schock
Chalcogenide photovoltaics : physics, technologies, and thin film devices / / Roland Scheer and Hans-Werner Schock
Autore Scheer Roland
Pubbl/distr/stampa Weinheim, Germany, : Wiley-VCH Verlag GmbH & Co., 2011
Descrizione fisica 1 online resource (386 p.)
Disciplina 621.31244
Altri autori (Persone) SchockH. W (Hans-Werner)
Soggetto topico Photovoltaic cells - Materials
Chalcogenides
Compound semiconductors
ISBN 1-283-30246-2
9786613302465
3-527-63371-5
3-527-63370-7
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Chalcogenide Photovoltaics; Contents; Preface; Symbols and Acronyms; 1 Introduction; 1.1 History of Cu(In,Ga)(S,Se)2 Solar Cells; 1.1.1 Milestones of Cu(In,Ga)(S,Se)2 Development; 1.2 History of CdTe Solar Cells; 1.2.1 Milestones of CdTe Development; 1.3 Prospects of Chalcogenide Photovoltaics; 2 Thin Film Heterostructures; 2.1 Energies and Potentials; 2.2 Charge Densities and Fluxes; 2.3 Energy Band Diagrams; 2.3.1 Rules and Conventions; 2.3.2 Absorber/Window; 2.3.3 Absorber/Buffer/Window; 2.3.4 Interface States; 2.3.5 Interface Dipoles; 2.3.6 Deep Bulk States; 2.3.7 Bandgap Gradients
2.4 Diode Currents2.4.1 Superposition Principle and Shifting Approximation; 2.4.2 Regions of Recombination; 2.4.3 Radiative Recombination; 2.4.4 Auger Recombination; 2.4.5 Defect Related Recombination; 2.4.5.1 SCR Recombination; 2.4.5.2 QNR Recombination; 2.4.5.3 Back Surface Recombination; 2.4.5.4 Interface Recombination; 2.4.6 Parallel Processes; 2.4.6.1 SCR and QNR Recombination; 2.4.6.2 SCR and IF Recombination; 2.4.7 Barriers for Diode Current; 2.4.8 Bias Dependence; 2.4.9 Non-Homogeneities; 2.5 Light Generated Currents; 2.5.1 Generation Currents; 2.5.2 Generation Function
2.5.3 Photo Current2.5.4 Collection Function; 2.5.4.1 Absorber Quasi Neutral Region; 2.5.4.2 QNR with Graded Bandgap; 2.5.4.3 QNR with Back Surface Field; 2.5.4.4 Absorber Space Charge Region; 2.5.4.5 Buffer Layer; 2.5.4.6 Simulating the Collection Function; 2.5.5 Quantum Efficiency and Charge Collection Efficiency; 2.5.6 Barriers for Photo Current; 2.5.7 Voltage Dependence of Photo Current; 2.5.7.1 Width of SCR; 2.5.7.2 Interface Recombination; 2.5.7.3 Photo Current Barriers; 2.6 Device Analysis and Parameters; 2.6.1 Equivalent Circuits; 2.6.1.1 DC Equivalent Circuit
2.6.1.2 AC Equivalent Circuit2.6.1.3 Module Equivalent Circuit; 2.6.2 Current-Voltage Analysis; 2.6.2.1 External Collection Efficiency; 2.6.2.2 Diode Parameters; 2.6.2.3 Open Circuit Voltage; 2.6.2.4 Fill Factor; 2.6.3 Capacitance-Voltage Analysis; 2.6.4 Admittance Spectroscopy; 3 Design Rules for Heterostructure Solar Cells and Modules; 3.1 Absorber Bandgap; 3.2 Band Alignment; 3.3 Emitter Doping and Doping Ratio; 3.4 Fermi Level Pinning; 3.5 Absorber Doping; 3.6 Absorber Thickness; 3.7 Grain Boundaries; 3.8 Back Contact Barrier; 3.9 Buffer Thickness; 3.10 Front Surface Gradient
3.11 Back Surface Gradients3.12 Monolithic Series Interconnection; 4 Thin Film Material Properties; 4.1 AII-BVI Absorbers; 4.1.1 Physico-Chemical Properties; 4.1.2 Lattice Dynamics; 4.1.3 Electronic Properties; 4.1.3.1 Practical Doping Limits; 4.1.3.2 Defect Spectroscopy; 4.1.3.3 Minority Carrier Lifetime; 4.1.4 Optical Properties; 4.1.4.1 CdTe; 4.1.4.2 Multinary Phases; 4.1.5 Surface Properties; 4.1.6 Properties of Grain Boundaries; 4.2 AI-BIII-CVI 2 Absorbers; 4.2.1 Physico-Chemical Properties; 4.2.1.1 Ternary Phase Diagrams; 4.2.1.2 Multinary Phases; 4.2.1.3 Diffusion Coefficients
4.2.2 Lattice Dynamics
Record Nr. UNINA-9911019273203321
Scheer Roland  
Weinheim, Germany, : Wiley-VCH Verlag GmbH & Co., 2011
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui