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Crystal growth technology [[electronic resource] ] : from fundamentals and simulation to large-scale production / / Hans J. Scheel and Peter Capper
| Crystal growth technology [[electronic resource] ] : from fundamentals and simulation to large-scale production / / Hans J. Scheel and Peter Capper |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, c2008 |
| Descrizione fisica | 1 online resource (523 p.) |
| Disciplina | 660.284298 |
| Altri autori (Persone) |
CapperPeter
ScheelHans J |
| Soggetto topico |
Crystal growth
Crystal growth - Industrial applications Crystal growth - Technological innovations |
| Soggetto genere / forma | Electronic books. |
| ISBN |
1-283-86964-0
3-527-62345-0 3-527-62344-2 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Crystal Growth Technology; Contents; Preface; List of Contributors; Part I General Aspects of Crystal Growth Technology; 1 Phase Diagrams for Crystal Growth; 1.1 Introduction; 1.2 Thermodynamics and Phase Diagrams; 1.3 Phase Diagrams vs. Crystal Growth from Liquid Phases; 1.4 Conclusions; References; 2 Fundamentals of Equilibrium Thermodynamics of Crystal Growth; 2.1 Introduction; 2.2 Recapitulation of Some Basic Concepts; 2.3 Relationships Between Thermodynamics and Kinetics; 2.4 Thermodynamics of Melt Growth; 2.5 Thermodynamics of Solution Growth
2.6 Thermodynamics of Crystal Growth from the Vapor2.7 Solid-Solid Equilibria; 2.8 Thermodynamics of Nucleation and Interfaces; 2.9 Summary; References; 3 Thermodynamics, Origin, and Control of Defects; 3.1 Introduction; 3.2 Native Point Defects; 3.3 Dislocations; 3.4 Dislocation Cells and Grain Boundaries; 3.5 Second-Phase Particles; 3.6 Summary and Outlook; References; 4 Thermophysical Properties of Molten Silicon; 4.1 Introduction; 4.2 Density and Volumetric Thermal Expansion Coefficient; 4.3 Isobaric Molar Heat Capacity; 4.4 Emissivity; 4.5 Thermal Conductivity; 4.6 Surface Tension 4.7 Diffusion Constant4.8 Viscosity; 4.9 Electrical Conductivity; 4.10 Sensitivity Analysis; 4.11 Recommended Thermophysical Property Data for Silicon System; 4.12 Summary; References; Part II Simulation of Industrial Growth Processes; 5 Yield Improvement and Defect Control in Bridgman-Type Crystal Growth with the Aid of Thermal Modeling; 5.1 Introduction; 5.2 Principles of Thermal Modeling; 5.3 Verification of Numerical Models; 5.4 Yield Enhancement by Defect Control; 5.5 Conclusions; References; 6 Modeling of Czochralski Growth of Large Silicon Crystals; 6.1 Introduction 6.2 Numerical Model6.3 Model Validation; 6.4 Conclusions; References; 7 Global Analysis of Effects of Magnetic Field Configuration on Melt/Crystal Interface Shape and Melt Flow in a Cz-Si Crystal Growth; 7.1 Introduction; 7.2 Model Description and Governing Equations Under a Transverse Magnetic Field; 7.3 Computation Results for Model Validation; 7.4 Numerical Analysis of a TMCZ Growth; 7.5 Conclusions; References; 8 Modeling of Semitransparent Bulk Crystal Growth; 8.1 Introduction; 8.2 Numerical Model; 8.3 An Example: Growth of Bismuth Germanate Crystals; 8.4 Conclusions; References Part III Compound Semiconductors9 Recent Progress in GaAs Growth Technologies at FREIBERGER; 9.1 Introduction; 9.2 Properties of GaAs; 9.3 Growth of Large-Diameter GaAs Single Crystals; 9.4 LEC versus VB/VGF GaAs Wafers; 9.5 Doping; 9.6 Summary; References; 10 Interface Stability and Its Impact on Control Dynamics; 10.1 Introduction; 10.2 Diameter Control; 10.3 Interface Transitions; 10.4 Factors Influencing the Shape of the Solid/Liquid Interface; 10.5 Conclusions and Discussion; References 11 Use of Forced Mixing via the Accelerated Crucible Rotation Technique (ACRT) in Bridgman Growth of Cadmium Mercury Telluride (CMT) |
| Record Nr. | UNINA-9910144685403321 |
| Weinheim, : Wiley-VCH, c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Crystal growth technology [[electronic resource] ] : from fundamentals and simulation to large-scale production / / Hans J. Scheel and Peter Capper
| Crystal growth technology [[electronic resource] ] : from fundamentals and simulation to large-scale production / / Hans J. Scheel and Peter Capper |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, c2008 |
| Descrizione fisica | 1 online resource (523 p.) |
| Disciplina | 660.284298 |
| Altri autori (Persone) |
CapperPeter
ScheelHans J |
| Soggetto topico |
Crystal growth
Crystal growth - Industrial applications Crystal growth - Technological innovations |
| ISBN |
1-283-86964-0
3-527-62345-0 3-527-62344-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Crystal Growth Technology; Contents; Preface; List of Contributors; Part I General Aspects of Crystal Growth Technology; 1 Phase Diagrams for Crystal Growth; 1.1 Introduction; 1.2 Thermodynamics and Phase Diagrams; 1.3 Phase Diagrams vs. Crystal Growth from Liquid Phases; 1.4 Conclusions; References; 2 Fundamentals of Equilibrium Thermodynamics of Crystal Growth; 2.1 Introduction; 2.2 Recapitulation of Some Basic Concepts; 2.3 Relationships Between Thermodynamics and Kinetics; 2.4 Thermodynamics of Melt Growth; 2.5 Thermodynamics of Solution Growth
2.6 Thermodynamics of Crystal Growth from the Vapor2.7 Solid-Solid Equilibria; 2.8 Thermodynamics of Nucleation and Interfaces; 2.9 Summary; References; 3 Thermodynamics, Origin, and Control of Defects; 3.1 Introduction; 3.2 Native Point Defects; 3.3 Dislocations; 3.4 Dislocation Cells and Grain Boundaries; 3.5 Second-Phase Particles; 3.6 Summary and Outlook; References; 4 Thermophysical Properties of Molten Silicon; 4.1 Introduction; 4.2 Density and Volumetric Thermal Expansion Coefficient; 4.3 Isobaric Molar Heat Capacity; 4.4 Emissivity; 4.5 Thermal Conductivity; 4.6 Surface Tension 4.7 Diffusion Constant4.8 Viscosity; 4.9 Electrical Conductivity; 4.10 Sensitivity Analysis; 4.11 Recommended Thermophysical Property Data for Silicon System; 4.12 Summary; References; Part II Simulation of Industrial Growth Processes; 5 Yield Improvement and Defect Control in Bridgman-Type Crystal Growth with the Aid of Thermal Modeling; 5.1 Introduction; 5.2 Principles of Thermal Modeling; 5.3 Verification of Numerical Models; 5.4 Yield Enhancement by Defect Control; 5.5 Conclusions; References; 6 Modeling of Czochralski Growth of Large Silicon Crystals; 6.1 Introduction 6.2 Numerical Model6.3 Model Validation; 6.4 Conclusions; References; 7 Global Analysis of Effects of Magnetic Field Configuration on Melt/Crystal Interface Shape and Melt Flow in a Cz-Si Crystal Growth; 7.1 Introduction; 7.2 Model Description and Governing Equations Under a Transverse Magnetic Field; 7.3 Computation Results for Model Validation; 7.4 Numerical Analysis of a TMCZ Growth; 7.5 Conclusions; References; 8 Modeling of Semitransparent Bulk Crystal Growth; 8.1 Introduction; 8.2 Numerical Model; 8.3 An Example: Growth of Bismuth Germanate Crystals; 8.4 Conclusions; References Part III Compound Semiconductors9 Recent Progress in GaAs Growth Technologies at FREIBERGER; 9.1 Introduction; 9.2 Properties of GaAs; 9.3 Growth of Large-Diameter GaAs Single Crystals; 9.4 LEC versus VB/VGF GaAs Wafers; 9.5 Doping; 9.6 Summary; References; 10 Interface Stability and Its Impact on Control Dynamics; 10.1 Introduction; 10.2 Diameter Control; 10.3 Interface Transitions; 10.4 Factors Influencing the Shape of the Solid/Liquid Interface; 10.5 Conclusions and Discussion; References 11 Use of Forced Mixing via the Accelerated Crucible Rotation Technique (ACRT) in Bridgman Growth of Cadmium Mercury Telluride (CMT) |
| Record Nr. | UNINA-9910829889103321 |
| Weinheim, : Wiley-VCH, c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Crystal growth technology : from fundamentals and simulation to large-scale production / / Hans J. Scheel and Peter Capper
| Crystal growth technology : from fundamentals and simulation to large-scale production / / Hans J. Scheel and Peter Capper |
| Pubbl/distr/stampa | Weinheim, : Wiley-VCH, c2008 |
| Descrizione fisica | 1 online resource (523 p.) |
| Disciplina | 660.284298 |
| Altri autori (Persone) |
CapperPeter
ScheelHans J |
| Soggetto topico |
Crystal growth
Crystal growth - Industrial applications Crystal growth - Technological innovations |
| ISBN |
1-283-86964-0
3-527-62345-0 3-527-62344-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Crystal Growth Technology; Contents; Preface; List of Contributors; Part I General Aspects of Crystal Growth Technology; 1 Phase Diagrams for Crystal Growth; 1.1 Introduction; 1.2 Thermodynamics and Phase Diagrams; 1.3 Phase Diagrams vs. Crystal Growth from Liquid Phases; 1.4 Conclusions; References; 2 Fundamentals of Equilibrium Thermodynamics of Crystal Growth; 2.1 Introduction; 2.2 Recapitulation of Some Basic Concepts; 2.3 Relationships Between Thermodynamics and Kinetics; 2.4 Thermodynamics of Melt Growth; 2.5 Thermodynamics of Solution Growth
2.6 Thermodynamics of Crystal Growth from the Vapor2.7 Solid-Solid Equilibria; 2.8 Thermodynamics of Nucleation and Interfaces; 2.9 Summary; References; 3 Thermodynamics, Origin, and Control of Defects; 3.1 Introduction; 3.2 Native Point Defects; 3.3 Dislocations; 3.4 Dislocation Cells and Grain Boundaries; 3.5 Second-Phase Particles; 3.6 Summary and Outlook; References; 4 Thermophysical Properties of Molten Silicon; 4.1 Introduction; 4.2 Density and Volumetric Thermal Expansion Coefficient; 4.3 Isobaric Molar Heat Capacity; 4.4 Emissivity; 4.5 Thermal Conductivity; 4.6 Surface Tension 4.7 Diffusion Constant4.8 Viscosity; 4.9 Electrical Conductivity; 4.10 Sensitivity Analysis; 4.11 Recommended Thermophysical Property Data for Silicon System; 4.12 Summary; References; Part II Simulation of Industrial Growth Processes; 5 Yield Improvement and Defect Control in Bridgman-Type Crystal Growth with the Aid of Thermal Modeling; 5.1 Introduction; 5.2 Principles of Thermal Modeling; 5.3 Verification of Numerical Models; 5.4 Yield Enhancement by Defect Control; 5.5 Conclusions; References; 6 Modeling of Czochralski Growth of Large Silicon Crystals; 6.1 Introduction 6.2 Numerical Model6.3 Model Validation; 6.4 Conclusions; References; 7 Global Analysis of Effects of Magnetic Field Configuration on Melt/Crystal Interface Shape and Melt Flow in a Cz-Si Crystal Growth; 7.1 Introduction; 7.2 Model Description and Governing Equations Under a Transverse Magnetic Field; 7.3 Computation Results for Model Validation; 7.4 Numerical Analysis of a TMCZ Growth; 7.5 Conclusions; References; 8 Modeling of Semitransparent Bulk Crystal Growth; 8.1 Introduction; 8.2 Numerical Model; 8.3 An Example: Growth of Bismuth Germanate Crystals; 8.4 Conclusions; References Part III Compound Semiconductors9 Recent Progress in GaAs Growth Technologies at FREIBERGER; 9.1 Introduction; 9.2 Properties of GaAs; 9.3 Growth of Large-Diameter GaAs Single Crystals; 9.4 LEC versus VB/VGF GaAs Wafers; 9.5 Doping; 9.6 Summary; References; 10 Interface Stability and Its Impact on Control Dynamics; 10.1 Introduction; 10.2 Diameter Control; 10.3 Interface Transitions; 10.4 Factors Influencing the Shape of the Solid/Liquid Interface; 10.5 Conclusions and Discussion; References 11 Use of Forced Mixing via the Accelerated Crucible Rotation Technique (ACRT) in Bridgman Growth of Cadmium Mercury Telluride (CMT) |
| Record Nr. | UNINA-9910876567203321 |
| Weinheim, : Wiley-VCH, c2008 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||