top

  Info

  • Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.

  Info

  • Utilizzare questo link per rimuovere la selezione effettuata.
Crystal growth technology [[electronic resource] ] : from fundamentals and simulation to large-scale production / / Hans J. Scheel and Peter Capper
Crystal growth technology [[electronic resource] ] : from fundamentals and simulation to large-scale production / / Hans J. Scheel and Peter Capper
Pubbl/distr/stampa Weinheim, : Wiley-VCH, c2008
Descrizione fisica 1 online resource (523 p.)
Disciplina 660.284298
Altri autori (Persone) CapperPeter
ScheelHans J
Soggetto topico Crystal growth
Crystal growth - Industrial applications
Crystal growth - Technological innovations
Soggetto genere / forma Electronic books.
ISBN 1-283-86964-0
3-527-62345-0
3-527-62344-2
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Crystal Growth Technology; Contents; Preface; List of Contributors; Part I General Aspects of Crystal Growth Technology; 1 Phase Diagrams for Crystal Growth; 1.1 Introduction; 1.2 Thermodynamics and Phase Diagrams; 1.3 Phase Diagrams vs. Crystal Growth from Liquid Phases; 1.4 Conclusions; References; 2 Fundamentals of Equilibrium Thermodynamics of Crystal Growth; 2.1 Introduction; 2.2 Recapitulation of Some Basic Concepts; 2.3 Relationships Between Thermodynamics and Kinetics; 2.4 Thermodynamics of Melt Growth; 2.5 Thermodynamics of Solution Growth
2.6 Thermodynamics of Crystal Growth from the Vapor2.7 Solid-Solid Equilibria; 2.8 Thermodynamics of Nucleation and Interfaces; 2.9 Summary; References; 3 Thermodynamics, Origin, and Control of Defects; 3.1 Introduction; 3.2 Native Point Defects; 3.3 Dislocations; 3.4 Dislocation Cells and Grain Boundaries; 3.5 Second-Phase Particles; 3.6 Summary and Outlook; References; 4 Thermophysical Properties of Molten Silicon; 4.1 Introduction; 4.2 Density and Volumetric Thermal Expansion Coefficient; 4.3 Isobaric Molar Heat Capacity; 4.4 Emissivity; 4.5 Thermal Conductivity; 4.6 Surface Tension
4.7 Diffusion Constant4.8 Viscosity; 4.9 Electrical Conductivity; 4.10 Sensitivity Analysis; 4.11 Recommended Thermophysical Property Data for Silicon System; 4.12 Summary; References; Part II Simulation of Industrial Growth Processes; 5 Yield Improvement and Defect Control in Bridgman-Type Crystal Growth with the Aid of Thermal Modeling; 5.1 Introduction; 5.2 Principles of Thermal Modeling; 5.3 Verification of Numerical Models; 5.4 Yield Enhancement by Defect Control; 5.5 Conclusions; References; 6 Modeling of Czochralski Growth of Large Silicon Crystals; 6.1 Introduction
6.2 Numerical Model6.3 Model Validation; 6.4 Conclusions; References; 7 Global Analysis of Effects of Magnetic Field Configuration on Melt/Crystal Interface Shape and Melt Flow in a Cz-Si Crystal Growth; 7.1 Introduction; 7.2 Model Description and Governing Equations Under a Transverse Magnetic Field; 7.3 Computation Results for Model Validation; 7.4 Numerical Analysis of a TMCZ Growth; 7.5 Conclusions; References; 8 Modeling of Semitransparent Bulk Crystal Growth; 8.1 Introduction; 8.2 Numerical Model; 8.3 An Example: Growth of Bismuth Germanate Crystals; 8.4 Conclusions; References
Part III Compound Semiconductors9 Recent Progress in GaAs Growth Technologies at FREIBERGER; 9.1 Introduction; 9.2 Properties of GaAs; 9.3 Growth of Large-Diameter GaAs Single Crystals; 9.4 LEC versus VB/VGF GaAs Wafers; 9.5 Doping; 9.6 Summary; References; 10 Interface Stability and Its Impact on Control Dynamics; 10.1 Introduction; 10.2 Diameter Control; 10.3 Interface Transitions; 10.4 Factors Influencing the Shape of the Solid/Liquid Interface; 10.5 Conclusions and Discussion; References
11 Use of Forced Mixing via the Accelerated Crucible Rotation Technique (ACRT) in Bridgman Growth of Cadmium Mercury Telluride (CMT)
Record Nr. UNINA-9910144685403321
Weinheim, : Wiley-VCH, c2008
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Crystal growth technology [[electronic resource] ] : from fundamentals and simulation to large-scale production / / Hans J. Scheel and Peter Capper
Crystal growth technology [[electronic resource] ] : from fundamentals and simulation to large-scale production / / Hans J. Scheel and Peter Capper
Pubbl/distr/stampa Weinheim, : Wiley-VCH, c2008
Descrizione fisica 1 online resource (523 p.)
Disciplina 660.284298
Altri autori (Persone) CapperPeter
ScheelHans J
Soggetto topico Crystal growth
Crystal growth - Industrial applications
Crystal growth - Technological innovations
ISBN 1-283-86964-0
3-527-62345-0
3-527-62344-2
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Crystal Growth Technology; Contents; Preface; List of Contributors; Part I General Aspects of Crystal Growth Technology; 1 Phase Diagrams for Crystal Growth; 1.1 Introduction; 1.2 Thermodynamics and Phase Diagrams; 1.3 Phase Diagrams vs. Crystal Growth from Liquid Phases; 1.4 Conclusions; References; 2 Fundamentals of Equilibrium Thermodynamics of Crystal Growth; 2.1 Introduction; 2.2 Recapitulation of Some Basic Concepts; 2.3 Relationships Between Thermodynamics and Kinetics; 2.4 Thermodynamics of Melt Growth; 2.5 Thermodynamics of Solution Growth
2.6 Thermodynamics of Crystal Growth from the Vapor2.7 Solid-Solid Equilibria; 2.8 Thermodynamics of Nucleation and Interfaces; 2.9 Summary; References; 3 Thermodynamics, Origin, and Control of Defects; 3.1 Introduction; 3.2 Native Point Defects; 3.3 Dislocations; 3.4 Dislocation Cells and Grain Boundaries; 3.5 Second-Phase Particles; 3.6 Summary and Outlook; References; 4 Thermophysical Properties of Molten Silicon; 4.1 Introduction; 4.2 Density and Volumetric Thermal Expansion Coefficient; 4.3 Isobaric Molar Heat Capacity; 4.4 Emissivity; 4.5 Thermal Conductivity; 4.6 Surface Tension
4.7 Diffusion Constant4.8 Viscosity; 4.9 Electrical Conductivity; 4.10 Sensitivity Analysis; 4.11 Recommended Thermophysical Property Data for Silicon System; 4.12 Summary; References; Part II Simulation of Industrial Growth Processes; 5 Yield Improvement and Defect Control in Bridgman-Type Crystal Growth with the Aid of Thermal Modeling; 5.1 Introduction; 5.2 Principles of Thermal Modeling; 5.3 Verification of Numerical Models; 5.4 Yield Enhancement by Defect Control; 5.5 Conclusions; References; 6 Modeling of Czochralski Growth of Large Silicon Crystals; 6.1 Introduction
6.2 Numerical Model6.3 Model Validation; 6.4 Conclusions; References; 7 Global Analysis of Effects of Magnetic Field Configuration on Melt/Crystal Interface Shape and Melt Flow in a Cz-Si Crystal Growth; 7.1 Introduction; 7.2 Model Description and Governing Equations Under a Transverse Magnetic Field; 7.3 Computation Results for Model Validation; 7.4 Numerical Analysis of a TMCZ Growth; 7.5 Conclusions; References; 8 Modeling of Semitransparent Bulk Crystal Growth; 8.1 Introduction; 8.2 Numerical Model; 8.3 An Example: Growth of Bismuth Germanate Crystals; 8.4 Conclusions; References
Part III Compound Semiconductors9 Recent Progress in GaAs Growth Technologies at FREIBERGER; 9.1 Introduction; 9.2 Properties of GaAs; 9.3 Growth of Large-Diameter GaAs Single Crystals; 9.4 LEC versus VB/VGF GaAs Wafers; 9.5 Doping; 9.6 Summary; References; 10 Interface Stability and Its Impact on Control Dynamics; 10.1 Introduction; 10.2 Diameter Control; 10.3 Interface Transitions; 10.4 Factors Influencing the Shape of the Solid/Liquid Interface; 10.5 Conclusions and Discussion; References
11 Use of Forced Mixing via the Accelerated Crucible Rotation Technique (ACRT) in Bridgman Growth of Cadmium Mercury Telluride (CMT)
Record Nr. UNINA-9910829889103321
Weinheim, : Wiley-VCH, c2008
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Crystal growth technology : from fundamentals and simulation to large-scale production / / Hans J. Scheel and Peter Capper
Crystal growth technology : from fundamentals and simulation to large-scale production / / Hans J. Scheel and Peter Capper
Pubbl/distr/stampa Weinheim, : Wiley-VCH, c2008
Descrizione fisica 1 online resource (523 p.)
Disciplina 660.284298
Altri autori (Persone) CapperPeter
ScheelHans J
Soggetto topico Crystal growth
Crystal growth - Industrial applications
Crystal growth - Technological innovations
ISBN 1-283-86964-0
3-527-62345-0
3-527-62344-2
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Nota di contenuto Crystal Growth Technology; Contents; Preface; List of Contributors; Part I General Aspects of Crystal Growth Technology; 1 Phase Diagrams for Crystal Growth; 1.1 Introduction; 1.2 Thermodynamics and Phase Diagrams; 1.3 Phase Diagrams vs. Crystal Growth from Liquid Phases; 1.4 Conclusions; References; 2 Fundamentals of Equilibrium Thermodynamics of Crystal Growth; 2.1 Introduction; 2.2 Recapitulation of Some Basic Concepts; 2.3 Relationships Between Thermodynamics and Kinetics; 2.4 Thermodynamics of Melt Growth; 2.5 Thermodynamics of Solution Growth
2.6 Thermodynamics of Crystal Growth from the Vapor2.7 Solid-Solid Equilibria; 2.8 Thermodynamics of Nucleation and Interfaces; 2.9 Summary; References; 3 Thermodynamics, Origin, and Control of Defects; 3.1 Introduction; 3.2 Native Point Defects; 3.3 Dislocations; 3.4 Dislocation Cells and Grain Boundaries; 3.5 Second-Phase Particles; 3.6 Summary and Outlook; References; 4 Thermophysical Properties of Molten Silicon; 4.1 Introduction; 4.2 Density and Volumetric Thermal Expansion Coefficient; 4.3 Isobaric Molar Heat Capacity; 4.4 Emissivity; 4.5 Thermal Conductivity; 4.6 Surface Tension
4.7 Diffusion Constant4.8 Viscosity; 4.9 Electrical Conductivity; 4.10 Sensitivity Analysis; 4.11 Recommended Thermophysical Property Data for Silicon System; 4.12 Summary; References; Part II Simulation of Industrial Growth Processes; 5 Yield Improvement and Defect Control in Bridgman-Type Crystal Growth with the Aid of Thermal Modeling; 5.1 Introduction; 5.2 Principles of Thermal Modeling; 5.3 Verification of Numerical Models; 5.4 Yield Enhancement by Defect Control; 5.5 Conclusions; References; 6 Modeling of Czochralski Growth of Large Silicon Crystals; 6.1 Introduction
6.2 Numerical Model6.3 Model Validation; 6.4 Conclusions; References; 7 Global Analysis of Effects of Magnetic Field Configuration on Melt/Crystal Interface Shape and Melt Flow in a Cz-Si Crystal Growth; 7.1 Introduction; 7.2 Model Description and Governing Equations Under a Transverse Magnetic Field; 7.3 Computation Results for Model Validation; 7.4 Numerical Analysis of a TMCZ Growth; 7.5 Conclusions; References; 8 Modeling of Semitransparent Bulk Crystal Growth; 8.1 Introduction; 8.2 Numerical Model; 8.3 An Example: Growth of Bismuth Germanate Crystals; 8.4 Conclusions; References
Part III Compound Semiconductors9 Recent Progress in GaAs Growth Technologies at FREIBERGER; 9.1 Introduction; 9.2 Properties of GaAs; 9.3 Growth of Large-Diameter GaAs Single Crystals; 9.4 LEC versus VB/VGF GaAs Wafers; 9.5 Doping; 9.6 Summary; References; 10 Interface Stability and Its Impact on Control Dynamics; 10.1 Introduction; 10.2 Diameter Control; 10.3 Interface Transitions; 10.4 Factors Influencing the Shape of the Solid/Liquid Interface; 10.5 Conclusions and Discussion; References
11 Use of Forced Mixing via the Accelerated Crucible Rotation Technique (ACRT) in Bridgman Growth of Cadmium Mercury Telluride (CMT)
Record Nr. UNINA-9910876567203321
Weinheim, : Wiley-VCH, c2008
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui