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Advanced Silicon Carbide Devices and Processing / / Stephen E. Saddow, Francesco La Via, editors
| Advanced Silicon Carbide Devices and Processing / / Stephen E. Saddow, Francesco La Via, editors |
| Pubbl/distr/stampa | [Place of publication not identified] : , : IntechOpen, , [2015] |
| Descrizione fisica | 1 online resource (258 pages) |
| Disciplina | 615.19 |
| Soggetto topico | Pharmaceutical technology |
| ISBN | 953-51-6385-X |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910317715403321 |
| [Place of publication not identified] : , : IntechOpen, , [2015] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Advances in silicon carbide processing and applications / / Stephen E. Saddow, Anant Agarwal, editors
| Advances in silicon carbide processing and applications / / Stephen E. Saddow, Anant Agarwal, editors |
| Pubbl/distr/stampa | Boston : , : Artech House, , [2004] |
| Descrizione fisica | 1 online resource (227 p.) |
| Disciplina | 621.3815/2 |
| Collana | Semiconductor materials and devices series |
| Soggetto topico |
Silicon carbide
Semiconductors |
| Soggetto genere / forma | Electronic books. |
| ISBN | 1-58053-741-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | 1. Silicon Carbide Overview / Olle Kordina and Stephen E. Saddow -- 2. High-Temperature SiC-FET Chemical Gas Sensors / Anita Lloyd Spetz, Shinji Nakagomi, and Susan Savage -- 3. Silicon Carbide Technology and Power Electronics Applications / C. Wesley Tipton IV and Stephen B. Bayne -- 4. Advances in Selective Doping of SiC Via Ion Implantation / A. Hallen [and others] -- 5. Power SiC MOSFETS / I. Sankin and J.B. Casady -- 6. Power and RF BJTs in 4H-SiC : Device Design and Technology / Anant Agarwal, Sei-Hyung Ryu, and John Palmour. |
| Record Nr. | UNINA-9910450093003321 |
| Boston : , : Artech House, , [2004] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Advances in silicon carbide processing and applications / / Stephen E. Saddow, Anant Agarwal, editors
| Advances in silicon carbide processing and applications / / Stephen E. Saddow, Anant Agarwal, editors |
| Pubbl/distr/stampa | Boston : , : Artech House, , [2004] |
| Descrizione fisica | 1 online resource (227 p.) |
| Disciplina | 621.3815/2 |
| Collana | Semiconductor materials and devices series |
| Soggetto topico |
Silicon carbide
Semiconductors |
| ISBN | 1-58053-741-3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto | 1. Silicon Carbide Overview / Olle Kordina and Stephen E. Saddow -- 2. High-Temperature SiC-FET Chemical Gas Sensors / Anita Lloyd Spetz, Shinji Nakagomi, and Susan Savage -- 3. Silicon Carbide Technology and Power Electronics Applications / C. Wesley Tipton IV and Stephen B. Bayne -- 4. Advances in Selective Doping of SiC Via Ion Implantation / A. Hallen [and others] -- 5. Power SiC MOSFETS / I. Sankin and J.B. Casady -- 6. Power and RF BJTs in 4H-SiC : Device Design and Technology / Anant Agarwal, Sei-Hyung Ryu, and John Palmour. |
| Record Nr. | UNINA-9910783462303321 |
| Boston : , : Artech House, , [2004] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||